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Suppression of deep-level traps via semicarbazide hydrochloride additives for high-performance tin-based perovskite solar cells. 通过盐酸缩氨基脲添加剂抑制深电平陷阱,实现高性能锡基过氧化物太阳能电池。
IF 5.4 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2023-12-29 DOI: 10.1007/s12200-023-00103-1
Wenbo Jia, Yi Jing, Han Zhang, Baoyan Tian, Huabo Huang, Changlei Wang, Ligang Xu

Tin perovskites with exemplary optoelectronic properties offer potential application in lead-free perovskite solar cells. However, Sn vacancies and undercoordinated Sn ions on the tin perovskite surfaces can create deep-level traps, leading to non-radiative recombination and absorption of nucleophilic O2 molecules, impeding further device efficiency and stability. Here, in this study, a new additive of semicarbazide hydrochloride (SEM-HCl) with a N-C=O functional group was introduced into the perovskite precursor to fabricate high-quality films with a low concentration of deep-level trap densities. This, in turn, serves to prevent undesirable interaction between photogenerated carriers and adsorbed oxygen molecules in the device's operational environment, ultimately reducing the proliferation of superoxide entities. As the result, the SEM-HCl-derived devices show a peak efficiency of 10.9% with improved device stability. These unencapsulated devices maintain almost 100% of their initial efficiencies after working for 100 h under continuous AM1.5 illumination conditions.

锡包晶石具有出色的光电特性,有望应用于无铅包晶石太阳能电池。然而,锡包晶石表面的锡空位和配位不足的锡离子会产生深层陷阱,导致非辐射性重组和吸收亲核的 O2 分子,从而阻碍设备效率和稳定性的进一步提高。在本研究中,我们在过氧化物前驱体中引入了一种带有 N-C=O 官能团的盐酸缩氨基脲(SEM-HCl)新添加剂,以制造出具有低浓度深层陷阱密度的高质量薄膜。这反过来又可防止光生载流子与器件工作环境中吸附的氧分子之间发生不良相互作用,最终减少超氧化物实体的扩散。因此,SEM-HCl 衍生器件的峰值效率达到了 10.9%,器件稳定性也得到了提高。这些未封装的器件在 AM1.5 连续照明条件下工作 100 小时后,仍能保持几乎 100% 的初始效率。
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引用次数: 0
Blue emitting exciplex for yellow and white organic light-emitting diodes. 用于黄色和白色有机发光二极管的蓝色发光复合物。
IF 5.4 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2023-12-14 DOI: 10.1007/s12200-023-00101-3
Kavya Rajeev, C K Vipin, Anjali K Sajeev, Atul Shukla, Sarah K M McGregor, Shih-Chun Lo, Ebinazar B Namdas, K N Narayanan Unni

White organic light-emitting diodes (WOLEDs) have several desirable features, but their commercialization is hindered by the poor stability of blue light emitters and high production costs due to complicated device structures. Herein, we investigate a standard blue emitting hole transporting material (HTM) N,N'-bis(naphthalen-1-yl)-N,N'-bis(phenyl)benzidine (NPB) and its exciplex emission upon combining with a suitable electron transporting material (ETM), 3-(biphenyl-4-yl)-5-(4-tert-butylphenyl)-4-phenyl-4H-1,2,4-triazole (TAZ). Blue and yellow OLEDs with simple device structures are developed by using a blend layer, NPB:TAZ, as a blue emitter as well as a host for yellow phosphorescent dopant iridium (III) bis(4-phenylthieno[3,2-c]pyridinato-N,C2')acetylacetonate (PO-01). Strategic device design then exploits the ambipolar charge transport properties of tetracene as a spacer layer to connect these blue and yellow emitting units. The tetracene-linked device demonstrates more promising results compared to those using a conventional charge generation layer (CGL). Judicious choice of the spacer prevents exciton diffusion from the blue emitter unit, yet facilitates charge carrier transport to the yellow emitter unit to enable additional exciplex formation. This complementary behavior of the spacer improves the blue emission properties concomitantly yielding reasonable yellow emission. The overall white light emission properties are enhanced, achieving CIE coordinates (0.36, 0.39) and color temperature (4643 K) similar to daylight. Employing intermolecular exciplex emission in OLEDs simplifies the device architecture via its dual functionality as a host and as an emitter.

白色有机发光二极管(WOLED)具有多种理想特性,但由于蓝光发射器的稳定性差以及器件结构复杂导致生产成本高昂,其商业化受到阻碍。在此,我们研究了一种标准的蓝色发射空穴传输材料(HTM)N,N'-双(萘-1-基)-N,N'-双(苯基)联苯胺(NPB)及其与合适的电子传输材料(ETM)3-(联苯-4-基)-5-(4-叔丁基苯基)-4-苯基-4H-1,2,4-三唑(TAZ)结合后的复合发射。通过使用 NPB:TAZ 混合层作为蓝色发光体以及黄色磷光掺杂剂双(4-苯基噻吩并[3,2-c]吡啶-N,C2')乙酰丙酮铱(III)(PO-01)的宿主,开发出器件结构简单的蓝色和黄色有机发光二极管。然后,战略性的器件设计利用廿四碳烯作为间隔层的极性电荷传输特性,将这些蓝色和黄色发光单元连接起来。与使用传统电荷发生层(CGL)的器件相比,廿四碳烯连接器件的效果更佳。对间隔层的明智选择既能防止激子从蓝色发射单元扩散,又能促进电荷载流子向黄色发射单元传输,从而形成更多的簇合物。间隔物的这种互补行为改善了蓝光发射特性,同时也产生了合理的黄光发射。整体白光发射特性得到增强,实现了与日光相似的 CIE 坐标(0.36, 0.39)和色温(4643 K)。在有机发光二极管中采用分子间复合发射,通过其作为宿主和发射器的双重功能简化了器件结构。
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引用次数: 0
Photostimulation of lymphatic clearance of β-amyloid from mouse brain: a new strategy for the therapy of Alzheimer's disease. 光刺激小鼠大脑中β-淀粉样蛋白的淋巴清除:治疗阿尔茨海默病的新策略。
IF 5.4 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2023-12-14 DOI: 10.1007/s12200-023-00099-8
Dongyu Li, Hao Lin, Silin Sun, Shaojun Liu, Zhang Liu, Yuening He, Jingtan Zhu, Jianyi Xu, Oxana Semyachkina-Glushkovskaya, Tingting Yu, Dan Zhu

Alzheimer's disease (AD) is an age-related neurodegenerative disorder that poses a significant burden on socio-economic and healthcare systems worldwide. However, the currently available therapy of AD is limited, and new strategies are needed to enhance the clearance of β-amyloid (Aβ) protein and improve cognitive function. Photobiomodulation (PBM) is a non-invasive and effective therapeutic method that has shown promise in treating various brain diseases. Here, we demonstrate that 1267-nm PBM significantly alleviates cognitive decline in the 5xFAD mouse model of AD and is safe as it does not induce a significant increase in cortical temperature. Moreover, with the combination of 3D tissue optical clearing imaging and automatic brain region segmentation, we show that PBM-mediated reductions of Aβ plaques in different subregions of prefrontal cortex and the hippocampus are different. The PBM-induced lymphatic clearance of Aβ from the brain is associated with improvement of memory and cognitive functions in 5xFAD mice. Our results suggest that the modulation of meningeal lymphatic vessels (MLVs) should play an important role in promoting Aβ clearance. Collectively, this pilot study demonstrates that PBM can safely accelerate lymphatic clearance of Aβ from the brain of 5xFAD mice, promoting improvement of neurocognitive status of AD animals suggesting that PBM can be an effective and bedside therapy for AD.

阿尔茨海默病(AD)是一种与年龄相关的神经退行性疾病,给全世界的社会经济和医疗保健系统带来了沉重负担。然而,目前治疗阿尔茨海默病的方法有限,需要新的策略来提高β淀粉样蛋白(Aβ)的清除率并改善认知功能。光生物调节(PBM)是一种非侵入性的有效治疗方法,在治疗各种脑部疾病方面已显示出前景。在这里,我们证明了 1267 波长的光生物调控能明显缓解 5xFAD AD 小鼠模型的认知功能衰退,而且不会引起皮层温度显著升高,因此是安全的。此外,结合三维组织光学清除成像和自动脑区分割,我们发现 PBM 介导的 Aβ 斑块在前额叶皮层和海马的不同亚区的减少是不同的。PBM 诱导的脑内 Aβ 淋巴清除与 5xFAD 小鼠记忆和认知功能的改善有关。我们的研究结果表明,脑膜淋巴管(MLV)的调节在促进 Aβ 清除方面应发挥重要作用。总之,这项试验性研究表明,PBM 可以安全地加速 5xFAD 小鼠大脑中 Aβ 的淋巴清除,促进 AD 动物神经认知状态的改善,这表明 PBM 可以成为一种有效的 AD 床边疗法。
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引用次数: 0
Local measurement of terahertz field-induced second harmonic generation in plasma filaments. 等离子体丝中太赫兹场诱导二次谐波生成的局部测量。
IF 5.4 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2023-12-13 DOI: 10.1007/s12200-023-00095-y
Kareem J Garriga Francis, Xi-Cheng Zhang

The concept of Terahertz Field-Induced Second Harmonic (TFISH) Generation is revisited to introduce a single-shot detection scheme based on third order nonlinearities. Focused specifically on the further development of THz plasma-based sources, we begin our research by reimagining the TFISH system to serve as a direct plasma diagnostic. In this work, an optical probe beam is used to mix directly with the strong ponderomotive current associated with laser-induced ionization. A four-wave mixing (FWM) process then generates a strong second-harmonic optical wave because of the mixing of the probe beam with the nonlinear current components oscillating at THz frequencies. The observed conversion efficiency is high enough that for the first time, the TFISH signal appears visible to the human eye. We perform spectral, spatial, and temporal analysis on the detected second-harmonic frequency and show its direct relationship to the nonlinear current. Further, a method to detect incoherent and coherent THz inside plasma filaments is devised using spatio-temporal couplings. The single-shot detection configurations are theoretically described using a combination of expanded FWM models with Kostenbauder and Gaussian Q-matrices. We show that the retrieved temporal traces for THz radiation from single- and two-color laser-induced air-plasma sources match theoretical descriptions very well. High temporal resolution is shown with a detection bandwidth limited only by the spatial extent of the probe laser beam. Large detection bandwidth and temporal characterization is shown for THz radiation confined to under-dense plasma filaments induced by < 100 fs lasers below the relativistic intensity limit.

我们重新审视了太赫兹场致二次谐波(TFISH)发生的概念,引入了基于三阶非线性的单次检测方案。我们将研究重点特别放在太赫兹等离子体源的进一步发展上,首先对 TFISH 系统进行了重新设计,使其成为一种直接的等离子体诊断方法。在这项工作中,光学探针光束直接与激光诱导电离相关的强思索动电流混合。由于探针光束与太赫兹频率振荡的非线性电流分量混合,四波混合(FWM)过程随后产生了强烈的二次谐波光波。观察到的转换效率非常高,TFISH 信号首次出现在人眼可见的范围内。我们对检测到的二次谐波频率进行了光谱、空间和时间分析,并显示了它与非线性电流的直接关系。此外,我们还设计了一种利用时空耦合探测等离子体丝内非相干和相干太赫兹的方法。单次探测配置是通过将扩展 FWM 模型与 Kostenbauder 和高斯 Q 矩阵相结合来进行理论描述的。我们表明,从单色和双色激光诱导空气等离子体源获取的太赫兹辐射时间轨迹与理论描述非常吻合。探测带宽仅受探测激光束的空间范围限制,显示了高时间分辨率。由以下因素诱导的局限于欠密集等离子体丝的太赫兹辐射显示了较大的探测带宽和时间特征
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引用次数: 0
Vapor growth of V-doped MoS2 monolayers with enhanced B-exciton emission and broad spectral response. 具有增强b激子发射和广谱响应的v掺杂MoS2单层的气相生长。
IF 5.4 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2023-12-07 DOI: 10.1007/s12200-023-00097-w
Biyuan Zheng, Xingxia Sun, Weihao Zheng, Chenguang Zhu, Chao Ma, Anlian Pan, Dong Li, Shengman Li

Dynamically engineering the optical and electrical properties in two-dimensional (2D) materials is of great significance for designing the related functions and applications. The introduction of foreign-atoms has previously been proven to be a feasible way to tune the band structure and related properties of 3D materials; however, this approach still remains to be explored in 2D materials. Here, we systematically demonstrate the growth of vanadium-doped molybdenum disulfide (V-doped MoS2) monolayers via an alkali metal-assisted chemical vapor deposition method. Scanning transmission electron microscopy demonstrated that V atoms substituted the Mo atoms and became uniformly distributed in the MoS2 monolayers. This was also confirmed by Raman and X-ray photoelectron spectroscopy. Power-dependent photoluminescence spectra clearly revealed the enhanced B-exciton emission characteristics in the V-doped MoS2 monolayers (with low doping concentration). Most importantly, through temperature-dependent study, we observed efficient valley scattering of the B-exciton, greatly enhancing its emission intensity. Carrier transport experiments indicated that typical p-type conduction gradually arisen and was enhanced with increasing V composition in the V-doped MoS2, where a clear n-type behavior transited first to ambipolar and then to lightly p-type charge carrier transport. In addition, visible to infrared wide-band photodetectors based on V-doped MoS2 monolayers (with low doping concentration) were demonstrated. The V-doped MoS2 monolayers with distinct B-exciton emission, enhanced p-type conduction and broad spectral response can provide new platforms for probing new physics and offer novel materials for optoelectronic applications.

动态工程化二维材料的光学和电学性质对于设计相关功能和应用具有重要意义。引入外来原子已经被证明是一种可行的方法来调整三维材料的能带结构和相关性质;然而,这种方法在二维材料中仍有待探索。在这里,我们系统地展示了通过碱金属辅助化学气相沉积法生长钒掺杂二硫化钼(v掺杂MoS2)单层。扫描透射电镜显示,V原子取代Mo原子,在MoS2单层中均匀分布。拉曼光谱和x射线光电子能谱也证实了这一点。功率依赖性光致发光光谱清楚地揭示了v掺杂(低掺杂浓度)二硫化钼单层中b激子发射特性的增强。最重要的是,通过温度依赖性研究,我们观察到b激子的有效谷散射,大大增强了其发射强度。载流子输运实验表明,在V掺杂的MoS2中,典型的p型导电逐渐出现,并随着V成分的增加而增强,其中明显的n型行为首先转变为双极性,然后转变为轻微的p型载流子输运。此外,还证明了基于v掺杂MoS2单层(低掺杂浓度)的可见光到红外宽带光电探测器。v掺杂的MoS2单层具有明显的b激子发射、增强的p型传导和广谱响应,可以为探索新物理提供新的平台,并为光电应用提供新的材料。
{"title":"Vapor growth of V-doped MoS<sub>2</sub> monolayers with enhanced B-exciton emission and broad spectral response.","authors":"Biyuan Zheng, Xingxia Sun, Weihao Zheng, Chenguang Zhu, Chao Ma, Anlian Pan, Dong Li, Shengman Li","doi":"10.1007/s12200-023-00097-w","DOIUrl":"10.1007/s12200-023-00097-w","url":null,"abstract":"<p><p>Dynamically engineering the optical and electrical properties in two-dimensional (2D) materials is of great significance for designing the related functions and applications. The introduction of foreign-atoms has previously been proven to be a feasible way to tune the band structure and related properties of 3D materials; however, this approach still remains to be explored in 2D materials. Here, we systematically demonstrate the growth of vanadium-doped molybdenum disulfide (V-doped MoS<sub>2</sub>) monolayers via an alkali metal-assisted chemical vapor deposition method. Scanning transmission electron microscopy demonstrated that V atoms substituted the Mo atoms and became uniformly distributed in the MoS<sub>2</sub> monolayers. This was also confirmed by Raman and X-ray photoelectron spectroscopy. Power-dependent photoluminescence spectra clearly revealed the enhanced B-exciton emission characteristics in the V-doped MoS<sub>2</sub> monolayers (with low doping concentration). Most importantly, through temperature-dependent study, we observed efficient valley scattering of the B-exciton, greatly enhancing its emission intensity. Carrier transport experiments indicated that typical p-type conduction gradually arisen and was enhanced with increasing V composition in the V-doped MoS<sub>2</sub>, where a clear n-type behavior transited first to ambipolar and then to lightly p-type charge carrier transport. In addition, visible to infrared wide-band photodetectors based on V-doped MoS<sub>2</sub> monolayers (with low doping concentration) were demonstrated. The V-doped MoS<sub>2</sub> monolayers with distinct B-exciton emission, enhanced p-type conduction and broad spectral response can provide new platforms for probing new physics and offer novel materials for optoelectronic applications.</p>","PeriodicalId":12685,"journal":{"name":"Frontiers of Optoelectronics","volume":"16 1","pages":"42"},"PeriodicalIF":5.4,"publicationDate":"2023-12-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10703759/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"138498212","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
An all-silicon design of a high-efficiency broadband transmissive terahertz polarization convertor. 全硅设计的高效宽带透射式太赫兹偏振转换器。
IF 5.4 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2023-12-06 DOI: 10.1007/s12200-023-00098-9
Xiaohua Xing, Die Zou, Xin Ding, Jianquan Yao, Liang Wu

Polarization, a fundamental behavior of electromagnetic waves, holds immense potential across diverse domains such as environmental monitoring, biomedicine, and ocean exploration. However, achieving efficient modulation of terahertz waves with wide operational bandwidth poses significant challenges. Here, we introduce an all-silicon polarization converter designed specifically to operate in the terahertz range of the electromagnetic spectrum. Simulation results demonstrate that the average conversion efficiency of cross-linear waves exceeds 80% across a wide frequency range spanning from 1.00 to 2.32 THz, with the highest conversion efficiency peaking at an impressive 99.97%. Additionally, our proposed structure facilitates linear-to-circular polarization conversion with an ellipticity of 1 at 0.85 THz. Furthermore, by rotating the cross-shaped microstructure, active control over arbitrary polarization states can be achieved. To summarize, the proposed structure offers remarkable flexibility and ease of integration, providing a reliable and practical solution for achieving broadband and efficient polarization conversion of terahertz waves.

极化是电磁波的一种基本特性,在环境监测、生物医学和海洋探测等不同领域具有巨大潜力。然而,实现太赫兹波的高效调制和宽工作带宽是一项重大挑战。在此,我们介绍一种专为在太赫兹电磁频谱范围内工作而设计的全硅极化转换器。仿真结果表明,在 1.00 至 2.32 太赫兹的宽频率范围内,交叉线性波的平均转换效率超过 80%,最高转换效率达到惊人的 99.97%。此外,我们提出的结构还能在 0.85 太赫兹时实现椭圆度为 1 的线性极化到圆形极化的转换。此外,通过旋转十字形微结构,还可以实现对任意偏振态的主动控制。总之,所提出的结构具有显著的灵活性和易集成性,为实现太赫兹波的宽带和高效极化转换提供了可靠而实用的解决方案。
{"title":"An all-silicon design of a high-efficiency broadband transmissive terahertz polarization convertor.","authors":"Xiaohua Xing, Die Zou, Xin Ding, Jianquan Yao, Liang Wu","doi":"10.1007/s12200-023-00098-9","DOIUrl":"10.1007/s12200-023-00098-9","url":null,"abstract":"<p><p>Polarization, a fundamental behavior of electromagnetic waves, holds immense potential across diverse domains such as environmental monitoring, biomedicine, and ocean exploration. However, achieving efficient modulation of terahertz waves with wide operational bandwidth poses significant challenges. Here, we introduce an all-silicon polarization converter designed specifically to operate in the terahertz range of the electromagnetic spectrum. Simulation results demonstrate that the average conversion efficiency of cross-linear waves exceeds 80% across a wide frequency range spanning from 1.00 to 2.32 THz, with the highest conversion efficiency peaking at an impressive 99.97%. Additionally, our proposed structure facilitates linear-to-circular polarization conversion with an ellipticity of 1 at 0.85 THz. Furthermore, by rotating the cross-shaped microstructure, active control over arbitrary polarization states can be achieved. To summarize, the proposed structure offers remarkable flexibility and ease of integration, providing a reliable and practical solution for achieving broadband and efficient polarization conversion of terahertz waves.</p>","PeriodicalId":12685,"journal":{"name":"Frontiers of Optoelectronics","volume":"16 1","pages":"40"},"PeriodicalIF":5.4,"publicationDate":"2023-12-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10700243/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"138487297","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Enhancement of silicon sub-bandgap photodetection by helium-ion implantation. 通过氦离子注入增强硅亚带隙光电探测。
IF 5.4 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2023-12-06 DOI: 10.1007/s12200-023-00096-x
Zhao Wang, Xiaolei Wen, Kai Zou, Yun Meng, Jinwei Zeng, Jian Wang, Huan Hu, Xiaolong Hu

Silicon sub-bandgap photodetectors can detect light at the infrared telecommunication wavelengths but with relatively weak photo-response. In this work, we demonstrate the enhancement of sub-bandgap photodetection in silicon by helium-ion implantation, without affecting the transparency that is an important beneficial feature of this type of photodetectors. With an implantation dose of 1 × 1013 ions/cm2, the minimal detectable optical power can be improved from - 33.2 to - 63.1 dBm, or, by 29.9 dB, at the wavelength of 1550 nm, and the photo-response at the same optical power (- 10 dBm) can be enhanced by approximately 18.8 dB. Our work provides a method for strategically modifying the intrinsic trade-off between transparency and strong photo-responses of this type of photodetectors.

硅亚带隙光电探测器可以探测红外通信波长的光,但光响应相对较弱。在这项工作中,我们展示了通过氦离子植入来增强硅亚带隙光电探测器的性能,同时不影响透明度,而透明度正是这类光电探测器的一个重要优点。当植入剂量为 1 × 1013 离子/平方厘米时,波长为 1550 纳米的最小可探测光功率可从 - 33.2 dBm 提高到 - 63.1 dBm,即提高 29.9 dB,而相同光功率(- 10 dBm)下的光反应可提高约 18.8 dB。我们的工作提供了一种方法,可以从战略上改变这类光电探测器在透明度和强光响应之间的内在权衡。
{"title":"Enhancement of silicon sub-bandgap photodetection by helium-ion implantation.","authors":"Zhao Wang, Xiaolei Wen, Kai Zou, Yun Meng, Jinwei Zeng, Jian Wang, Huan Hu, Xiaolong Hu","doi":"10.1007/s12200-023-00096-x","DOIUrl":"10.1007/s12200-023-00096-x","url":null,"abstract":"<p><p>Silicon sub-bandgap photodetectors can detect light at the infrared telecommunication wavelengths but with relatively weak photo-response. In this work, we demonstrate the enhancement of sub-bandgap photodetection in silicon by helium-ion implantation, without affecting the transparency that is an important beneficial feature of this type of photodetectors. With an implantation dose of 1 × 10<sup>13</sup> ions/cm<sup>2</sup>, the minimal detectable optical power can be improved from - 33.2 to - 63.1 dBm, or, by 29.9 dB, at the wavelength of 1550 nm, and the photo-response at the same optical power (- 10 dBm) can be enhanced by approximately 18.8 dB. Our work provides a method for strategically modifying the intrinsic trade-off between transparency and strong photo-responses of this type of photodetectors.</p>","PeriodicalId":12685,"journal":{"name":"Frontiers of Optoelectronics","volume":"16 1","pages":"41"},"PeriodicalIF":5.4,"publicationDate":"2023-12-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10700279/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"138487298","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Potassium ion pre-intercalated MnO2 for aqueous multivalent ion batteries. 含水多价离子电池的钾离子预插MnO2。
IF 5.4 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2023-12-01 DOI: 10.1007/s12200-023-00093-0
Zikang Xu, Ruiqi Ren, Hang Ren, Jingyuan Zhang, Jinyao Yang, Jiawen Qiu, Yizhou Zhang, Guoyin Zhu, Liang Huang, Shengyang Dong

Manganese dioxide (MnO2), as a cathode material for multivalent ion (such as Mg2+ and Al3+) storage, is investigated due to its high initial capacity. However, during multivalent ion insertion/extraction, the crystal structure of MnO2 partially collapses, leading to fast capacity decay in few charge/discharge cycles. Here, through pre-intercalating potassium-ion (K+) into δ-MnO2, we synthesize a potassium ion pre-intercalated MnO2, K0.21MnO2·0.31H2O (KMO), as a reliable cathode material for multivalent ion batteries. The as-prepared KMO exhibits a high reversible capacity of 185 mAh/g at 1 A/g, with considerable rate performance and improved cycling stability in 1 mol/L MgSO4 electrolyte. In addition, we observe that aluminum-ion (Al3+) can also insert into a KMO cathode. This work provides a valid method for modification of manganese-based oxides for aqueous multivalent ion batteries.

二氧化锰(MnO2)作为多价离子(如Mg2+和Al3+)存储的正极材料,由于其高初始容量而被研究。然而,在多价离子插入/提取过程中,MnO2的晶体结构会部分坍塌,导致在少数充放电循环中容量衰减迅速。本文通过将钾离子(K+)预插到δ-MnO2中,合成了一种钾离子预插MnO2 K0.21MnO2·0.31H2O (KMO),作为多价离子电池可靠的正极材料。制备的KMO在1 a /g下具有185 mAh/g的高可逆容量,在1 mol/L MgSO4电解质中具有良好的倍率性能和循环稳定性。此外,我们观察到铝离子(Al3+)也可以插入到KMO阴极中。本研究为多价离子电池锰基氧化物的改性提供了一种有效的方法。
{"title":"Potassium ion pre-intercalated MnO<sub>2</sub> for aqueous multivalent ion batteries.","authors":"Zikang Xu, Ruiqi Ren, Hang Ren, Jingyuan Zhang, Jinyao Yang, Jiawen Qiu, Yizhou Zhang, Guoyin Zhu, Liang Huang, Shengyang Dong","doi":"10.1007/s12200-023-00093-0","DOIUrl":"10.1007/s12200-023-00093-0","url":null,"abstract":"<p><p>Manganese dioxide (MnO<sub>2</sub>), as a cathode material for multivalent ion (such as Mg<sup>2+</sup> and Al<sup>3+</sup>) storage, is investigated due to its high initial capacity. However, during multivalent ion insertion/extraction, the crystal structure of MnO<sub>2</sub> partially collapses, leading to fast capacity decay in few charge/discharge cycles. Here, through pre-intercalating potassium-ion (K<sup>+</sup>) into δ-MnO<sub>2</sub>, we synthesize a potassium ion pre-intercalated MnO<sub>2</sub>, K<sub>0.21</sub>MnO<sub>2</sub>·0.31H<sub>2</sub>O (KMO), as a reliable cathode material for multivalent ion batteries. The as-prepared KMO exhibits a high reversible capacity of 185 mAh/g at 1 A/g, with considerable rate performance and improved cycling stability in 1 mol/L MgSO<sub>4</sub> electrolyte. In addition, we observe that aluminum-ion (Al<sup>3+</sup>) can also insert into a KMO cathode. This work provides a valid method for modification of manganese-based oxides for aqueous multivalent ion batteries.</p>","PeriodicalId":12685,"journal":{"name":"Frontiers of Optoelectronics","volume":"16 1","pages":"39"},"PeriodicalIF":5.4,"publicationDate":"2023-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10692024/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"138459518","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Weighted spectral correlation angle target detection method for land-based hyperspectral imaging 陆基高光谱成像的加权光谱相关角目标检测方法
IF 5.4 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2023-12-01 DOI: 10.1007/s12200-023-00100-4
Qianghui Wang, Bing Zhou, Wenshen Hua, Jiaju Ying, Xun Liu, Yue Cheng
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引用次数: 0
A scheme for realizing nonreciprocal interlayer coupling in bilayer topological systems. 一种在双层拓扑系统中实现非互易层间耦合的方案。
IF 5.4 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2023-11-27 DOI: 10.1007/s12200-023-00094-z
Xiaoxiao Wang, Ruizhe Gu, Yandong Li, Huixin Qi, Xiaoyong Hu, Xingyuan Wang, Qihuang Gong

Nonreciprocal interlayer coupling is difficult to practically implement in bilayer non-Hermitian topological photonic systems. In this work, we identify a similarity transformation between the Hamiltonians of systems with nonreciprocal interlayer coupling and on-site gain/loss. The similarity transformation is widely applicable, and we show its application in one- and two-dimensional bilayer topological systems as examples. The bilayer non-Hermitian system with nonreciprocal interlayer coupling, whose topological number can be defined using the gauge-smoothed Wilson loop, is topologically equivalent to the bilayer system with on-site gain/loss. We also show that the topological number of bilayer non-Hermitian C6v-typed domain-induced topological interface states can be defined in the same way as in the case of the bilayer non-Hermitian Su-Schrieffer-Heeger model. Our results show the relations between two microscopic provenances of the non-Hermiticity and provide a universal and convenient scheme for constructing and studying nonreciprocal interlayer coupling in bilayer non-Hermitian topological systems. This scheme is useful for observation of non-Hermitian skin effect in three-dimensional systems.

非互易层间耦合在双层非厄米拓扑光子系统中是难以实际实现的。在这项工作中,我们确定了具有非互易层间耦合和现场增益/损失的系统的哈密顿量之间的相似变换。相似变换具有广泛的适用性,并以一维和二维双层拓扑系统为例说明了相似变换的应用。具有非互易层间耦合的双层非厄米系统拓扑数与具有现场增益/损耗的双层系统拓扑等效,其拓扑数可以用规范光滑威尔逊环来定义。我们还证明了双层非厄米c6v型域诱导的拓扑界面态的拓扑数可以用与双层非厄米Su-Schrieffer-Heeger模型相同的方式来定义。我们的研究结果显示了两种非厄米性的微观来源之间的关系,为构建和研究双层非厄米拓扑系统的非互易层间耦合提供了一种通用和方便的方案。该方案可用于三维系统中非厄米集肤效应的观测。
{"title":"A scheme for realizing nonreciprocal interlayer coupling in bilayer topological systems.","authors":"Xiaoxiao Wang, Ruizhe Gu, Yandong Li, Huixin Qi, Xiaoyong Hu, Xingyuan Wang, Qihuang Gong","doi":"10.1007/s12200-023-00094-z","DOIUrl":"10.1007/s12200-023-00094-z","url":null,"abstract":"<p><p>Nonreciprocal interlayer coupling is difficult to practically implement in bilayer non-Hermitian topological photonic systems. In this work, we identify a similarity transformation between the Hamiltonians of systems with nonreciprocal interlayer coupling and on-site gain/loss. The similarity transformation is widely applicable, and we show its application in one- and two-dimensional bilayer topological systems as examples. The bilayer non-Hermitian system with nonreciprocal interlayer coupling, whose topological number can be defined using the gauge-smoothed Wilson loop, is topologically equivalent to the bilayer system with on-site gain/loss. We also show that the topological number of bilayer non-Hermitian C<sub>6v</sub>-typed domain-induced topological interface states can be defined in the same way as in the case of the bilayer non-Hermitian Su-Schrieffer-Heeger model. Our results show the relations between two microscopic provenances of the non-Hermiticity and provide a universal and convenient scheme for constructing and studying nonreciprocal interlayer coupling in bilayer non-Hermitian topological systems. This scheme is useful for observation of non-Hermitian skin effect in three-dimensional systems.</p>","PeriodicalId":12685,"journal":{"name":"Frontiers of Optoelectronics","volume":"16 1","pages":"38"},"PeriodicalIF":5.4,"publicationDate":"2023-11-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10682335/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"138444464","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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