Frontiers of Optoelectronics最新文献

Optical beating is the usual approach to generation of microwave signals. However, the highest frequency achievable for microwave signals is limited by the bandwidths of optoelectronic devices. To maximize the microwave frequency with a limited bandwidth of a photodetector (PD) and relieve the bandwidth bottleneck, we propose to generate microwave signals with the single sideband (SSB) format by beating a continuous wave (CW) light with an optical SSB signal. By simply adjusting the frequency difference between the CW light and the carrier of the optical SSB signal, the frequency of the generated microwave SSB signal is changed correspondingly. In the experiment, amplitude shift keying (ASK) microwave signals with the SSB format are successfully generated with different carrier frequencies and coding bit rates, and the recovered coding information agrees well with the original pseudo random binary sequence (PRBS) of 2⁷ - 1 bits. The proposed approach can significantly relieve the bandwidth restriction set by optoelectronic devices in high-speed microwave communication systems.

Stable picosecond dissipative soliton pulses were observed in an ytterbium-doped fiber laser employing a high-quality mixture of BP/SnSe₂-PVA saturable absorber (SA). The modulation depth, saturation intensity, and non-saturable loss of the mixture of BP/SnSe₂-PVA SA were measured with values of 5.98%, 18.37 MW/cm², and 33%, respectively. Within the pump power range of 150-270 mW, stable dissipative soliton pulses were obtained with an output power of 1.68-4 mW. When the minimum pulse duration is 1.28 ps, a repetition rate of 0.903 MHz, center wavelength of 1064.38 nm and 3 dB bandwidth of 2 nm were obtained. The maximum pulse energy of 4.43 nJ and the signal-to-noise ratio up to 72 dB were achieved at pump power of 270 mW. The results suggest that the BP/SnSe₂-PVA mixture SA has outstanding nonlinear saturable absorption characteristics and broad ultrafast laser applications.

Second-order (χ⁽²⁾) optical nonlinearity is one of the most common mechanisms for modulating and generating coherent light in photonic devices. Due to strong photon confinement and long photon lifetime, integrated microresonators have emerged as an ideal platform for investigation of nonlinear optical effects. However, existing silicon-based materials lack a χ⁽²⁾ response due to their centrosymmetric structures. A variety of novel material platforms possessing χ⁽²⁾ nonlinearity have been developed over the past two decades. This review comprehensively summarizes the progress of second-order nonlinear optical effects in integrated microresonators. First, the basic principles of χ⁽²⁾ nonlinear effects are introduced. Afterward, we highlight the commonly used χ⁽²⁾ nonlinear optical materials, including their material properties and respective functional devices. We also discuss the prospects and challenges of utilizing χ⁽²⁾ nonlinearity in the field of integrated microcavity photonics.

Optical fiber communication networks play an important role in the global telecommunication network. However, nonlinear effects in the optical fiber and transceiver noise greatly limit the performance of fiber communication systems. In this paper, the product of mutual information (MI) and communication bandwidth is used as the metric of the achievable information rate (AIR). The MI loss caused by the transceiver is also considered in this work, and the bit-wise MI, generalized mutual information (GMI), is used to calculate the AIR. This loss is more significant in the use of higher-order modulation formats. The AIR analysis is carried out in the QPSK, 16QAM, 64QAM and 256QAM modulation formats for the communication systems with different communication bandwidths and transmission distances based on the enhanced Gaussian noise (EGN) model. The paper provides suggestions for the selection of the optimal modulation format in different transmission scenarios.

We report self-organized periodic nanostructures on amorphous silicon thin films by femtosecond laser-induced oxidation. The dependence of structural periodicity on the thickness of silicon films and the substrate materials is investigated. The results reveal that when silicon film is 200 nm, the period of self-organized nanostructures is close to the laser wavelength and is insensitive to the substrates. In contrast, when the silicon film is 50 nm, the period of nanostructures is much shorter than the laser wavelength, and is dependent on the substrates. Furthermore, we demonstrate that, for the thick silicon films, quasi-cylindrical waves dominate the formation of periodic nanostructures, while for the thin silicon films, the formation originates from slab waveguide modes. Finite-difference time-domain method-based numerical simulations support the experimental discoveries.

Infrared photovoltaic cells (IRPCs) have attracted considerable attention for potential applications in wireless optical power transfer (WOPT) systems. As an efficient fiber-integrated WOPT system typically uses a 1550 nm laser beam, it is essential to tune the peak conversion efficiency of IRPCs to this wavelength. However, IRPCs based on lead sulfide (PbS) colloidal quantum dots (CQDs) with an excitonic peak of 1550 nm exhibit low short circuit current (J_sc) due to insufficient absorption under monochromatic light illumination. Here, we propose comprehensive optical engineering to optimize the device structure of IRPCs based on PbS CQDs, for 1550 nm WOPT systems. The absorption by the device is enhanced by improving the transmittance of tin-doped indium oxide (ITO) in the infrared region and by utilizing the optical resonance effect in the device. Therefore, the optimized device exhibited a high short circuit current density of 37.65 mA/cm² under 1 sun (AM 1.5G) solar illumination and 11.91 mA/cm² under 1550 nm illumination 17.3 mW/cm². Furthermore, the champion device achieved a record high power conversion efficiency (PCE) of 7.17% under 1 sun illumination and 10.29% under 1550 nm illumination. The PbS CQDs IRPCs under 1550 nm illumination can even light up a liquid crystal display (LCD), demonstrating application prospects in the future.

The mechanisms of interaction between pulsed laser and materials are complex and indistinct, severely influencing the stability and quality of laser processing. This paper proposes an intelligent method based on the acoustic emission (AE) technique to monitor laser processing and explore the interaction mechanisms. The validation experiment is designed to perform nanosecond laser dotting on float glass. Processing parameters are set differently to generate various outcomes: ablated pits and irregular-shaped cracks. In the signal processing stage, we divide the AE signals into two bands, main and tail bands, according to the laser processing duration, to study the laser ablation and crack behavior, respectively. Characteristic parameters extracted by a method that combines framework and frame energy calculation of AE signals can effectively reveal the mechanisms of pulsed laser processing. The main band features evaluate the degree of laser ablation from the time and intensity scales, and the tail band characteristics demonstrate that the cracks occur after laser dotting. In addition, from the analysis of the parameters of the tail band very large cracks can be efficiently distinguished. The intelligent AE monitoring method was successfully applied in exploring the interaction mechanism of nanosecond laser dotting float glass and can be used in other pulsed laser processing fields.

As a member of Xenes family, germanene has excellent nonlinear saturable absorption characteristics. In this work, we prepared germanene nanosheets by liquid phase exfoliation and measured their saturation intensity as 0.6 GW/cm² with a modulation depth of 8%. Then, conventional solitons with a pulse width of 946 fs and high-energy noise-like pulses with a pulse width of 784 fs were obtained by using germanene nanosheet as a saturable absorber for a mode-locked Erbium-doped fiber laser. The characteristics of the two types of pulses were investigated experimentally. The results reveal that germanene has great potential for modulation devices in ultrafast lasers and can be used as a material for creation of excellent nonlinear optical devices to explore richer applications in ultrafast photonics.

This paper proposes a mode-locked fiber laser based on graphene-coated microfiber. The total length of the fiber laser resonant cavity is 31.34 m. Under the condition of stable output of bright-dark soliton pairs from the fiber laser, dual-wavelength tuning is realized by adjusting the polarization controller (PC), and the wavelength tuning range is 11 nm. Furthermore, the effects of polarization states on bright-dark solitons are studied. It is demonstrated that the mode-locking state can be switched between conventional solitons and bright-dark solitons in the graphene mode-locked fiber laser. Bright-dark soliton pairs with different shapes and nanosecond pulse width can be obtained by adjusting the PC and pump power.

An integrated microwave photonic mixer based on silicon photonic platforms is proposed, which consist of a dual-drive Mach-Zehnder modulator and a balanced photodetector. The modulated optical signals from microwave photonic links can be directly demodulated and down-converted to intermediate frequency (IF) signals by the photonic mixer. The converted signal is obtained by conducting off-chip subtraction of the outputs from the balanced photodetector, and subsequent filtering of the high frequency items by an electrical low-pass filter. Benefiting from balanced detection, the conversion gain of the IF signal is improved by 6 dB, and radio frequency leakage and common-mode noise are suppressed significantly. System-level simulations show that the frequency mixing system has a spurious-free dynamic range of 89 dB·Hz^2/3, even with deteriorated linearity caused by the two cascaded modulators. The spur suppression ratio of the photonic mixer remains higher than 40 dB when the IF varies from 0.5 to 4 GHz. The electrical-electrical 3 dB bandwidth of frequency conversion is 11 GHz. The integrated frequency mixing approach is quite simple, requiring no extra optical filters or electrical 90° hybrid coupler, which makes the system more stable and with broader bandwidth so that it can meet the potential demand in practical applications.