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Copper-based metal halides for X-ray and photodetection. x射线和光探测用铜基金属卤化物。
IF 5.4 3区 工程技术 Q1 Engineering Pub Date : 2022-11-21 DOI: 10.1007/s12200-022-00048-x
Fu Qiu, Yutian Lei, Zhiwen Jin

Copper-based metal halides have become important materials in the field of X-ray and photodetection due to their excellent optical properties, good environmental stability and low toxicity. This review presents the progress of research on crystal structure/morphology, photophysics/optical properties and applications of copper-based metal halides. We also discuss the challenges of copper-based metal halides with a perspective of their future research directions.

铜基金属卤化物具有优异的光学性能、良好的环境稳定性和低毒性,已成为x射线和光探测领域的重要材料。本文综述了铜基金属卤化物的晶体结构/形态、光物理/光学性质及应用研究进展。我们还讨论了铜基金属卤化物面临的挑战,并展望了其未来的研究方向。
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引用次数: 1
Recent advances in developing high-performance organic hole transporting materials for inverted perovskite solar cells. 倒置钙钛矿太阳能电池中高性能有机空穴传输材料的研究进展。
IF 5.4 3区 工程技术 Q1 Engineering Pub Date : 2022-11-17 DOI: 10.1007/s12200-022-00050-3
Xianglang Sun, Zonglong Zhu, Zhong'an Li

Inverted perovskite solar cells (PVSCs) have recently made exciting progress, showing high power conversion efficiencies (PCEs) of 25% in single-junction devices and 30.5% in silicon/perovskite tandem devices. The hole transporting material (HTM) in an inverted PVSC plays an important role in determining the device performance, since it not only extracts/transports holes but also affects the growth and crystallization of perovskite film. Currently, polymer and self-assembled monolayer (SAM) have been considered as two types of most promising HTM candidates for inverted PVSCs owing to their high PCEs, high stability and adaptability to large area devices. In this review, recent encouraging progress of high-performance polymer and SAM-based HTMs is systematically reviewed and summarized, including molecular design strategies and the correlation between molecular structure and device performance. We hope this review can inspire further innovative development of HTMs for wide applications in highly efficient and stable inverted PVSCs and the tandem devices.

倒置钙钛矿太阳能电池(PVSCs)最近取得了令人兴奋的进展,在单结器件中显示出25%的高功率转换效率(pce),在硅/钙钛矿串联器件中显示出30.5%的高功率转换效率。在倒置PVSC中,空穴输运材料(HTM)不仅能提取/输运空穴,还能影响钙钛矿薄膜的生长和结晶,对器件性能起着重要的决定作用。目前,聚合物和自组装单层(SAM)由于其高pce、高稳定性和对大面积器件的适应性而被认为是倒立PVSCs最有前途的两种HTM候选材料。本文从分子设计策略、分子结构与器件性能的关系等方面,系统地综述了近年来高性能聚合物和基于sam的HTMs的研究进展。我们希望这一综述能够启发HTMs进一步的创新发展,在高效稳定的倒置PVSCs和串联器件中得到广泛的应用。
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引用次数: 4
Broadband optical frequency comb generation based on single electro-absorption modulation driven by radio frequency coupled signals. 基于射频耦合信号驱动的单电吸收调制的宽带光频梳生成。
IF 5.4 3区 工程技术 Q1 Engineering Pub Date : 2022-11-14 DOI: 10.1007/s12200-022-00045-0
Pan Jiang, Peili Li, Yiming Fan

Broadband optical frequency comb (OFC) generation based on a single electro-absorption modulator (EAM) is proposed. The EAM is driven by a radio frequency (RF) multi-frequency signal generated by a multiplication coupler composed of an electrical power splitter and an arithmetic circuit. Thus the number of comb-lines of the generated OFC can be increased. A complete theoretical model of OFC generation by an EAM driven by nth power of the RF source is established, and the performance of the OFC is analyzed by using OptiSystem software. The results show that, the number of comb-lines of the OFC is positively correlated with the number of multiplication of the RF source signal. The frequency spacing of the comb-lines is twice the frequency of the RF source signal and is tunable by adjusting the frequency of the RF source signal. Increasing chirp factor and modulation index of EAM could increase the number of comb-lines of the generated OFC. The amplitude of the RF source signal had little impact on the flatness of the OFC and the average OFC power. The scheme developed is not only simple and low-cost, but also can produce a large number of comb-lines.

提出了基于单电吸收调制器(EAM)的宽带光频梳(OFC)生成方法。EAM由由功率分配器和算术电路组成的倍增耦合器产生的射频多频信号驱动。因此产生的OFC的梳线数量可以增加。建立了由射频源n功率驱动的EAM产生OFC的完整理论模型,并利用OptiSystem软件对OFC的性能进行了分析。结果表明,OFC的梳线数与射频源信号的乘法次数呈正相关。梳线的频率间距为射频源信号频率的两倍,并可通过调整射频源信号的频率来调节。增加EAM的啁啾因子和调制指数可以增加生成OFC的梳线数。射频源信号的幅值对OFC的平坦度和平均OFC功率影响不大。所开发的方案不仅简单、成本低,而且可以生产大量的梳线。
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引用次数: 0
A sensitization strategy for highly efficient blue fluorescent organic light-emitting diodes. 一种高效蓝色荧光有机发光二极管的敏化策略。
IF 5.4 3区 工程技术 Q1 Engineering Pub Date : 2022-11-10 DOI: 10.1007/s12200-022-00046-z
Yalei Duan, Runda Guo, Yaxiong Wang, Kaiyuan Di, Lei Wang

Highly efficient blue fluorescent materials have recently attracted great interest for organic light-emitting diode (OLED) application. Here, two new pyrene based organic molecules consisting of a highly rigid skeleton, namely SPy and DPy, are developed. These two blue light emitters exhibit excellent thermal stability. The experiment reveals that the full-width at half-maximum (FWHM) of the emission spectrum can be tuned by introducing different amounts of 9,9-diphenyl-N-phenyl-9H-fluoren-2-amine on pyrene units. The FWHM of the emission spectrum is only 37 nm in diluted toluene solution for DPy. Furthermore, highly efficient blue OLEDs are obtained by thermally activated delayed fluorescence (TADF) sensitization strategy. The blue fluorescent OLEDs utilizing DPy as emitters achieve a maximum external quantum efficiency (EQE) of 10.4% with the electroluminescence (EL) peak/FWHM of 480 nm/49 nm. Particularly, the EQE of DPy-based device is boosted from 2.6% in non-doped device to 10.4% in DMAc-DPS TADF sensitized fluorescence (TSF) device, which is a 400% enhancement. Therefore, this work demonstrates that the TSF strategy is promising for highly efficient fluorescent OLEDs application in wide-color-gamut display field.

近年来,高效蓝光荧光材料在有机发光二极管(OLED)中的应用引起了人们的极大兴趣。本文开发了两种新的基于芘的高刚性骨架有机分子,即SPy和DPy。这两个蓝光发射器表现出优异的热稳定性。实验表明,在芘单元上引入不同量的9,9-二苯基- n-苯基- 9h -芴-2胺可以调节发射光谱的半最大值全宽度。DPy在稀释甲苯溶液中发射光谱的波峰宽仅为37 nm。此外,通过热激活延迟荧光(TADF)敏化策略获得了高效的蓝色oled。利用DPy作为发射体的蓝色荧光oled的最大外量子效率(EQE)为10.4%,电致发光(EL)峰值/FWHM为480 nm/49 nm。特别是,DMAc-DPS TADF敏化荧光(TSF)器件的EQE从未掺杂器件的2.6%提高到10.4%,提高了400%。因此,本研究表明,TSF策略有望在宽色域显示领域应用于高效荧光oled。
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引用次数: 2
Dark current modeling of thick perovskite X-ray detectors. 厚钙钛矿x射线探测器的暗电流建模。
IF 5.4 3区 工程技术 Q1 Engineering Pub Date : 2022-10-31 DOI: 10.1007/s12200-022-00044-1
Shan Zhao, Xinyuan Du, Jincong Pang, Haodi Wu, Zihao Song, Zhiping Zheng, Ling Xu, Jiang Tang, Guangda Niu

Metal halide perovskites (MHPs) have demonstrated excellent performances in detection of X-rays and gamma-rays. Most studies focus on improving the sensitivity of single-pixel MHP detectors. However, little work pays attention to the dark current, which is crucial for the back-end circuit integration. Herein, the requirement of dark current is quantitatively evaluated as low as 10-9 A/cm2 for X-ray imagers integrated on pixel circuits. Moreover, through the semiconductor device analysis and simulation, we reveal that the main current compositions of thick perovskite X-ray detectors are the thermionic-emission current (JT) and the generation-recombination current (Jg-r). The typical observed failures of p-n junctions in thick detectors are caused by the high generation-recombination current due to the band mismatch and interface defects. This work provides a deep insight into the design of high sensitivity and low dark current perovskite X-ray detectors.

金属卤化物钙钛矿(MHPs)在x射线和伽马射线探测方面表现出优异的性能。大多数研究都集中在提高单像素MHP探测器的灵敏度上。然而,对于后端电路集成至关重要的暗电流,研究却很少。本文定量评估了集成在像素电路上的x射线成像仪对暗电流的要求,暗电流低至10-9 A/cm2。此外,通过半导体器件分析和仿真,我们发现厚钙钛矿x射线探测器的主要电流组成是热离子发射电流(JT)和生成复合电流(Jg-r)。在厚探测器中观察到的典型p-n结失效是由带错配和界面缺陷引起的高生成复合电流引起的。这项工作为高灵敏度和低暗电流钙钛矿x射线探测器的设计提供了深入的见解。
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引用次数: 1
Design and simulation of type-I graphene/Si quantum dot superlattice for intermediate-band solar cell applications. 用于中波段太阳能电池的i型石墨烯/硅量子点超晶格的设计与仿真。
IF 5.4 3区 工程技术 Q1 Engineering Pub Date : 2022-10-28 DOI: 10.1007/s12200-022-00043-2
Masumeh Sarkhoush, Hassan Rasooli Saghai, Hadi Soofi

Recent experiments suggest graphene-based materials as candidates for use in future electronic and optoelectronic devices. In this study, we propose a new multilayer quantum dot (QD) superlattice (SL) structure with graphene as the core and silicon (Si) as the shell of QD. The Slater-Koster tight-binding method based on Bloch theory is exploited to investigate the band structure and energy states of the graphene/Si QD. Results reveal that the graphene/Si QD is a type-I QD and the ground state is 0.6 eV above the valance band. The results also suggest that the graphene/Si QD can be potentially used to create a sub-bandgap in all Si-based intermediate-band solar cells (IBSC). The energy level hybridization in a SL of graphene/Si QDs is investigated and it is observed that the mini-band formation is under the influence of inter-dot spacing among QDs. To evaluate the impact of the graphene/Si QD SL on the performance of Si-based solar cells, we design an IBSC based on the graphene/Si QD (QDIBSC) and calculate its short-circuit current density (Jsc) and carrier generation rate (G) using the 2D finite difference time domain (FDTD) method. In comparison with the standard Si-based solar cell which records Jsc = 16.9067 mA/cm2 and G = 1.48943 × 1028 m-3⋅s-1, the graphene/Si QD IBSC with 2 layers of QDs presents Jsc = 36.4193 mA/cm2 and G = 7.94192 × 1028 m-3⋅s-1, offering considerable improvement. Finally, the effects of the number of QD layers (L) and the height of QD (H) on the performance of the graphene/Si QD IBSC are discussed.

最近的实验表明,石墨烯基材料是未来电子和光电子器件的候选材料。在这项研究中,我们提出了一种新的多层量子点(QD)超晶格(SL)结构,石墨烯为核心,硅(Si)为QD的壳层。利用基于Bloch理论的Slater-Koster紧密结合方法研究了石墨烯/硅量子点的能带结构和能态。结果表明,石墨烯/硅量子点为i型量子点,基态在价带以上0.6 eV。结果还表明,石墨烯/硅量子点可以潜在地用于在所有硅基中间带太阳能电池(IBSC)中创建子带隙。研究了石墨烯/硅量子点的能级杂化,发现量子点之间的点间距对小能带的形成有影响。为了评估石墨烯/硅QD SL对硅基太阳能电池性能的影响,我们设计了一个基于石墨烯/硅QD (QDIBSC)的IBSC,并使用二维时域有限差分(FDTD)方法计算了其短路电流密度(Jsc)和载流子生成率(G)。与标准硅基太阳能电池的Jsc = 16.9067 mA/cm2和G = 1.48943 × 1028 m-3⋅s-1相比,具有2层量子点的石墨烯/硅QD IBSC的Jsc = 36.4193 mA/cm2和G = 7.94192 × 1028 m-3⋅s-1有了较大的提高。最后,讨论了量子点层数(L)和量子点高度(H)对石墨烯/硅量子点IBSC性能的影响。
{"title":"Design and simulation of type-I graphene/Si quantum dot superlattice for intermediate-band solar cell applications.","authors":"Masumeh Sarkhoush,&nbsp;Hassan Rasooli Saghai,&nbsp;Hadi Soofi","doi":"10.1007/s12200-022-00043-2","DOIUrl":"https://doi.org/10.1007/s12200-022-00043-2","url":null,"abstract":"<p><p>Recent experiments suggest graphene-based materials as candidates for use in future electronic and optoelectronic devices. In this study, we propose a new multilayer quantum dot (QD) superlattice (SL) structure with graphene as the core and silicon (Si) as the shell of QD. The Slater-Koster tight-binding method based on Bloch theory is exploited to investigate the band structure and energy states of the graphene/Si QD. Results reveal that the graphene/Si QD is a type-I QD and the ground state is 0.6 eV above the valance band. The results also suggest that the graphene/Si QD can be potentially used to create a sub-bandgap in all Si-based intermediate-band solar cells (IBSC). The energy level hybridization in a SL of graphene/Si QDs is investigated and it is observed that the mini-band formation is under the influence of inter-dot spacing among QDs. To evaluate the impact of the graphene/Si QD SL on the performance of Si-based solar cells, we design an IBSC based on the graphene/Si QD (QDIBSC) and calculate its short-circuit current density (J<sub>sc</sub>) and carrier generation rate (G) using the 2D finite difference time domain (FDTD) method. In comparison with the standard Si-based solar cell which records J<sub>sc</sub> = 16.9067 mA/cm<sup>2</sup> and G = 1.48943 × 10<sup>28</sup> m<sup>-3</sup>⋅s<sup>-1</sup>, the graphene/Si QD IBSC with 2 layers of QDs presents J<sub>sc</sub> = 36.4193 mA/cm<sup>2</sup> and G = 7.94192 × 10<sup>28</sup> m<sup>-3</sup>⋅s<sup>-1</sup>, offering considerable improvement. Finally, the effects of the number of QD layers (L) and the height of QD (H) on the performance of the graphene/Si QD IBSC are discussed.</p>","PeriodicalId":12685,"journal":{"name":"Frontiers of Optoelectronics","volume":null,"pages":null},"PeriodicalIF":5.4,"publicationDate":"2022-10-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9756208/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"9094889","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Van der Waals epitaxial growth and optoelectronics of a vertical MoS2/WSe2 p-n junction. 垂直MoS2/WSe2 p-n结的范德华外延生长和光电子学。
IF 5.4 3区 工程技术 Q1 Engineering Pub Date : 2022-10-11 DOI: 10.1007/s12200-022-00041-4
Yu Xiao, Junyu Qu, Ziyu Luo, Ying Chen, Xin Yang, Danliang Zhang, Honglai Li, Biyuan Zheng, Jiali Yi, Rong Wu, Wenxia You, Bo Liu, Shula Chen, Anlian Pan

Two-dimensional (2D) transition metal dichalcogenides (TMDs) have attracted extensive attention due to their unique electronic and optical properties. In particular, TMDs can be flexibly combined to form diverse vertical van der Waals (vdWs) heterostructures without the limitation of lattice matching, which creates vast opportunities for fundamental investigation of novel optoelectronic applications. Here, we report an atomically thin vertical p-n junction WSe2/MoS2 produced by a chemical vapor deposition method. Transmission electron microscopy and steady-state photoluminescence experiments reveal its high quality and excellent optical properties. Back gate field effect transistor (FET) constructed using this p-n junction exhibits bipolar behaviors and a mobility of 9 cm2/(V·s). In addition, the photodetector based on MoS2/WSe2 heterostructures displays outstanding optoelectronic properties (R = 8 A/W, D* = 2.93 × 1011 Jones, on/off ratio of 104), which benefited from the built-in electric field across the interface. The direct growth of TMDs p-n vertical heterostructures may offer a novel platform for future optoelectronic applications.

二维(2D)过渡金属二硫族化合物(TMDs)由于其独特的电子和光学性质而引起了广泛的关注。特别是,TMDs可以灵活地组合形成多种垂直范德华(vdWs)异质结构,而不受晶格匹配的限制,这为新型光电应用的基础研究创造了巨大的机会。在这里,我们报告了一个原子薄的垂直p-n结WSe2/MoS2由化学气相沉积方法。透射电镜和稳态光致发光实验表明其具有优良的光学性能。使用该pn结构建的后栅场效应晶体管(FET)表现出双极行为和9 cm2/(V·s)的迁移率。此外,基于MoS2/WSe2异质结构的光电探测器显示出优异的光电性能(R = 8 A/W, D* = 2.93 × 1011 Jones,开/关比为104),这得益于内置的跨界面电场。直接生长的tmd p-n垂直异质结构可能为未来的光电应用提供一个新的平台。
{"title":"Van der Waals epitaxial growth and optoelectronics of a vertical MoS<sub>2</sub>/WSe<sub>2</sub> p-n junction.","authors":"Yu Xiao,&nbsp;Junyu Qu,&nbsp;Ziyu Luo,&nbsp;Ying Chen,&nbsp;Xin Yang,&nbsp;Danliang Zhang,&nbsp;Honglai Li,&nbsp;Biyuan Zheng,&nbsp;Jiali Yi,&nbsp;Rong Wu,&nbsp;Wenxia You,&nbsp;Bo Liu,&nbsp;Shula Chen,&nbsp;Anlian Pan","doi":"10.1007/s12200-022-00041-4","DOIUrl":"https://doi.org/10.1007/s12200-022-00041-4","url":null,"abstract":"<p><p>Two-dimensional (2D) transition metal dichalcogenides (TMDs) have attracted extensive attention due to their unique electronic and optical properties. In particular, TMDs can be flexibly combined to form diverse vertical van der Waals (vdWs) heterostructures without the limitation of lattice matching, which creates vast opportunities for fundamental investigation of novel optoelectronic applications. Here, we report an atomically thin vertical p-n junction WSe<sub>2</sub>/MoS<sub>2</sub> produced by a chemical vapor deposition method. Transmission electron microscopy and steady-state photoluminescence experiments reveal its high quality and excellent optical properties. Back gate field effect transistor (FET) constructed using this p-n junction exhibits bipolar behaviors and a mobility of 9 cm<sup>2</sup>/(V·s). In addition, the photodetector based on MoS<sub>2</sub>/WSe<sub>2</sub> heterostructures displays outstanding optoelectronic properties (R = 8 A/W, D* = 2.93 × 10<sup>11</sup> Jones, on/off ratio of 10<sup>4</sup>), which benefited from the built-in electric field across the interface. The direct growth of TMDs p-n vertical heterostructures may offer a novel platform for future optoelectronic applications.</p>","PeriodicalId":12685,"journal":{"name":"Frontiers of Optoelectronics","volume":null,"pages":null},"PeriodicalIF":5.4,"publicationDate":"2022-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9756242/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"9080171","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Flexible thermochromic fabrics enabling dynamic colored display. 柔性热致变色织物,可实现动态彩色显示。
IF 5.4 3区 工程技术 Q1 Engineering Pub Date : 2022-09-29 DOI: 10.1007/s12200-022-00042-3
Pan Li, Zhihui Sun, Rui Wang, Yuchen Gong, Yingting Zhou, Yuwei Wang, Xiaojuan Liu, Xianjun Zhou, Ju Ouyang, Mingzhi Chen, Chong Hou, Min Chen, Guangming Tao

Color-changeable fibers can provide diverse functions for intelligent wearable devices such as novel information displays and human-machine interfaces when woven into fabric. This work develops a low-cost, effective, and scalable strategy to produce thermochromic fibers by wet spinning. Through a combination of different thermochromic microcapsules, flexible fibers with abundant and reversible color changes are obtained. These color changes can be clearly observed by the naked eye. It is also found that the fibers exhibit excellent color-changing stability even after 8000 thermal cycles. Moreover, the thermochromic fibers can be fabricated on a large scale and easily woven or implanted into various fabrics with good mechanical performance. Driven by their good mechanical and physical characteristics, applications of thermochromic fibers in dynamic colored display are demonstrated. Dynamic quick response (QR) code display and recognition are successfully realized with thermochromic fabrics. This work well confirms the potential applications of thermochromic fibers in smart textiles, wearable devices, flexible displays, and human-machine interfaces.

变色纤维织成织物后,可为智能可穿戴设备提供新颖的信息显示、人机界面等多种功能。本研究开发了一种低成本、高效、可扩展的湿法纺丝生产热致变色纤维的方法。通过不同的热致变色微胶囊的组合,获得了色彩变化丰富且可逆的柔性纤维。这些颜色变化可以用肉眼清楚地观察到。实验还发现,即使在8000次热循环后,纤维仍表现出优异的变色稳定性。此外,热致变色纤维可以大规模制备,并且易于编织或植入各种织物中,具有良好的机械性能。热致变色纤维由于其良好的机械和物理特性,在动态彩色显示领域得到了广泛的应用。利用热致变色织物成功地实现了动态快速响应(QR)码的显示和识别。这项工作很好地证实了热致变色纤维在智能纺织品、可穿戴设备、柔性显示器和人机界面方面的潜在应用。
{"title":"Flexible thermochromic fabrics enabling dynamic colored display.","authors":"Pan Li,&nbsp;Zhihui Sun,&nbsp;Rui Wang,&nbsp;Yuchen Gong,&nbsp;Yingting Zhou,&nbsp;Yuwei Wang,&nbsp;Xiaojuan Liu,&nbsp;Xianjun Zhou,&nbsp;Ju Ouyang,&nbsp;Mingzhi Chen,&nbsp;Chong Hou,&nbsp;Min Chen,&nbsp;Guangming Tao","doi":"10.1007/s12200-022-00042-3","DOIUrl":"https://doi.org/10.1007/s12200-022-00042-3","url":null,"abstract":"<p><p>Color-changeable fibers can provide diverse functions for intelligent wearable devices such as novel information displays and human-machine interfaces when woven into fabric. This work develops a low-cost, effective, and scalable strategy to produce thermochromic fibers by wet spinning. Through a combination of different thermochromic microcapsules, flexible fibers with abundant and reversible color changes are obtained. These color changes can be clearly observed by the naked eye. It is also found that the fibers exhibit excellent color-changing stability even after 8000 thermal cycles. Moreover, the thermochromic fibers can be fabricated on a large scale and easily woven or implanted into various fabrics with good mechanical performance. Driven by their good mechanical and physical characteristics, applications of thermochromic fibers in dynamic colored display are demonstrated. Dynamic quick response (QR) code display and recognition are successfully realized with thermochromic fabrics. This work well confirms the potential applications of thermochromic fibers in smart textiles, wearable devices, flexible displays, and human-machine interfaces.</p>","PeriodicalId":12685,"journal":{"name":"Frontiers of Optoelectronics","volume":null,"pages":null},"PeriodicalIF":5.4,"publicationDate":"2022-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9756210/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"10530609","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Ligand exchange engineering of FAPbI3 perovskite quantum dots for solar cells. 太阳能电池用FAPbI3钙钛矿量子点配体交换工程。
IF 5.4 3区 工程技术 Q1 Engineering Pub Date : 2022-09-23 DOI: 10.1007/s12200-022-00038-z
Wentao Fan, Qiyuan Gao, Xinyi Mei, Donglin Jia, Jingxuan Chen, Junming Qiu, Qisen Zhou, Xiaoliang Zhang

Formamidinium lead triiodide (FAPbI3) perovskite quantum dots (PQDs) show great advantages in photovoltaic applications due to their ideal bandgap energy, high stability and solution processability. The anti-solvent used for the post-treatment of FAPbI3 PQD solid films significantly affects the surface chemistry of the PQDs, and thus the vacancies caused by surface ligand removal inhibit the optoelectronic properties and stability of PQDs. Here, we study the effects of different anti-solvents with different polarities on FAPbI3 PQDs and select a series of organic molecules for surface passivation of PQDs. The results show that methyl acetate could effectively remove surface ligands from the PQD surface without destroying its crystal structure during the post-treatment. The benzamidine hydrochloride (PhFACl) applied as short ligands of PQDs during the post-treatment could fill the A-site and X-site vacancies of PQDs and thus improve the electronic coupling of PQDs. Finally, the PhFACl-based PQD solar cell (PQDSC) achieves a power conversion efficiency of 6.4%, compared to that of 4.63% for the conventional PQDSC. This work provides a reference for insights into the surface passivation of PQDs and the improvement in device performance of PQDSCs.

三碘化甲脒铅(FAPbI3)钙钛矿量子点(PQDs)具有理想的带隙能量、高稳定性和溶液可加工性,在光伏应用中具有很大的优势。FAPbI3 PQD固体膜后处理中使用的抗溶剂会显著影响PQD的表面化学性质,从而导致表面配体去除所产生的空位抑制了PQD的光电性能和稳定性。本文研究了不同极性的抗溶剂对FAPbI3 pqd的影响,并选择了一系列有机分子用于pqd的表面钝化。结果表明,乙酸甲酯能在不破坏PQD晶体结构的前提下,有效去除PQD表面配体。后处理过程中使用盐酸苯并脒(PhFACl)作为PQDs的短配体,可以填补PQDs的a位和x位空缺,从而改善PQDs的电子耦合。最后,基于phfacl的PQD太阳能电池(PQDSC)的功率转换效率为6.4%,而传统的PQDSC的功率转换效率为4.63%。该工作为PQDSCs的表面钝化和器件性能的提高提供了参考。
{"title":"Ligand exchange engineering of FAPbI<sub>3</sub> perovskite quantum dots for solar cells.","authors":"Wentao Fan,&nbsp;Qiyuan Gao,&nbsp;Xinyi Mei,&nbsp;Donglin Jia,&nbsp;Jingxuan Chen,&nbsp;Junming Qiu,&nbsp;Qisen Zhou,&nbsp;Xiaoliang Zhang","doi":"10.1007/s12200-022-00038-z","DOIUrl":"https://doi.org/10.1007/s12200-022-00038-z","url":null,"abstract":"<p><p>Formamidinium lead triiodide (FAPbI<sub>3</sub>) perovskite quantum dots (PQDs) show great advantages in photovoltaic applications due to their ideal bandgap energy, high stability and solution processability. The anti-solvent used for the post-treatment of FAPbI<sub>3</sub> PQD solid films significantly affects the surface chemistry of the PQDs, and thus the vacancies caused by surface ligand removal inhibit the optoelectronic properties and stability of PQDs. Here, we study the effects of different anti-solvents with different polarities on FAPbI<sub>3</sub> PQDs and select a series of organic molecules for surface passivation of PQDs. The results show that methyl acetate could effectively remove surface ligands from the PQD surface without destroying its crystal structure during the post-treatment. The benzamidine hydrochloride (PhFACl) applied as short ligands of PQDs during the post-treatment could fill the A-site and X-site vacancies of PQDs and thus improve the electronic coupling of PQDs. Finally, the PhFACl-based PQD solar cell (PQDSC) achieves a power conversion efficiency of 6.4%, compared to that of 4.63% for the conventional PQDSC. This work provides a reference for insights into the surface passivation of PQDs and the improvement in device performance of PQDSCs.</p>","PeriodicalId":12685,"journal":{"name":"Frontiers of Optoelectronics","volume":null,"pages":null},"PeriodicalIF":5.4,"publicationDate":"2022-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9756204/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"10528944","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Highly stable β-ketoenamine-based covalent organic frameworks (COFs): synthesis and optoelectrical applications. 高稳定的β-酮胺基共价有机骨架(COFs):合成及其光电应用。
IF 5.4 3区 工程技术 Q1 Engineering Pub Date : 2022-09-19 DOI: 10.1007/s12200-022-00032-5
Yaqin Li, Maosong Liu, Jinjun Wu, Junbo Li, Xianglin Yu, Qichun Zhang

Covalent organic frameworks (COFs) are one class of porous materials with permanent porosity and regular channels, and have a covalent bond structure. Due to their interesting characteristics, COFs have exhibited diverse potential applications in many fields. However, some applications require the frameworks to possess high structural stability, excellent crystallinity, and suitable pore size. COFs based on β-ketoenamine and imines are prepared through the irreversible enol-to-keto tautomerization. These materials have high crystallinity and exhibit high stability in boiling water, with strong resistance to acids and bases, resulting in various possible applications. In this review, we first summarize the preparation methods for COFs based on β-ketoenamine, in the form of powders, films and foams. Then, the effects of different synthetic methods on the crystallinity and pore structure of COFs based on β-ketoenamine are analyzed and compared. The relationship between structures and different applications including fluorescence sensors, energy storage, photocatalysis, electrocatalysis, batteries and proton conduction are carefully summarized. Finally, the potential applications, large-scale industrial preparation and challenges in the future are presented.

共价有机骨架(COFs)是一类具有永久孔隙和规则孔道的多孔材料,具有共价键结构。由于其有趣的特性,COFs在许多领域显示出不同的潜在应用。然而,一些应用要求骨架具有高的结构稳定性、优异的结晶度和合适的孔径。基于β-酮胺和亚胺的COFs是通过烯醇-酮的不可逆互变异构反应制备的。这些材料结晶度高,在沸水中表现出很高的稳定性,对酸碱有很强的抵抗力,有各种可能的应用。本文首先综述了以β-酮胺为基础的COFs的制备方法,包括粉末、薄膜和泡沫的制备方法。然后,分析比较了不同合成方法对β-酮胺基COFs结晶度和孔隙结构的影响。对荧光传感器、储能、光催化、电催化、电池、质子传导等不同应用领域的结构关系进行了详细总结。最后,展望了该技术的应用前景、大规模工业化准备以及未来面临的挑战。
{"title":"Highly stable β-ketoenamine-based covalent organic frameworks (COFs): synthesis and optoelectrical applications.","authors":"Yaqin Li,&nbsp;Maosong Liu,&nbsp;Jinjun Wu,&nbsp;Junbo Li,&nbsp;Xianglin Yu,&nbsp;Qichun Zhang","doi":"10.1007/s12200-022-00032-5","DOIUrl":"https://doi.org/10.1007/s12200-022-00032-5","url":null,"abstract":"<p><p>Covalent organic frameworks (COFs) are one class of porous materials with permanent porosity and regular channels, and have a covalent bond structure. Due to their interesting characteristics, COFs have exhibited diverse potential applications in many fields. However, some applications require the frameworks to possess high structural stability, excellent crystallinity, and suitable pore size. COFs based on β-ketoenamine and imines are prepared through the irreversible enol-to-keto tautomerization. These materials have high crystallinity and exhibit high stability in boiling water, with strong resistance to acids and bases, resulting in various possible applications. In this review, we first summarize the preparation methods for COFs based on β-ketoenamine, in the form of powders, films and foams. Then, the effects of different synthetic methods on the crystallinity and pore structure of COFs based on β-ketoenamine are analyzed and compared. The relationship between structures and different applications including fluorescence sensors, energy storage, photocatalysis, electrocatalysis, batteries and proton conduction are carefully summarized. Finally, the potential applications, large-scale industrial preparation and challenges in the future are presented.</p>","PeriodicalId":12685,"journal":{"name":"Frontiers of Optoelectronics","volume":null,"pages":null},"PeriodicalIF":5.4,"publicationDate":"2022-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9756274/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"9080166","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
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Frontiers of Optoelectronics
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