Pub Date : 1979-11-01DOI: 10.1049/IJ-SSED.1979.0046
B. Poh, T. Rozzi, C. Velzel
We analyse a theoretical model of self-sustained oscillations in D.H. injection lasers, where a single or two filaments feed on two distinct carrier reservoirs, and consider the simultaneous effect of optical coupling by saturable absorption, carrier diffusion, and by spontaneous emission. We derive conditions for instability valid for any form of the gain function and specialise the results to the case of logarithmic and linear gain. Numerical results are presented showing trajectories in the phase plane of the carrier densities as well as the time evolution of carrier and photon densities.
{"title":"Single-and dual-filament self-sustained oscillations in d.h.injection lasers","authors":"B. Poh, T. Rozzi, C. Velzel","doi":"10.1049/IJ-SSED.1979.0046","DOIUrl":"https://doi.org/10.1049/IJ-SSED.1979.0046","url":null,"abstract":"We analyse a theoretical model of self-sustained oscillations in D.H. injection lasers, where a single or two filaments feed on two distinct carrier reservoirs, and consider the simultaneous effect of optical coupling by saturable absorption, carrier diffusion, and by spontaneous emission. We derive conditions for instability valid for any form of the gain function and specialise the results to the case of logarithmic and linear gain. Numerical results are presented showing trajectories in the phase plane of the carrier densities as well as the time evolution of carrier and photon densities.","PeriodicalId":127114,"journal":{"name":"Iee Journal on Solidstate and Electron Devices","volume":"62 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1979-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134126193","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1979-11-01DOI: 10.1049/IJ-SSED:19790040
S. Ritchie
Conventional models of junction heating in semiconductor lasers have been considered, and are found to be inconsistent with the experimental observations on stripe-geometry double-heterojunction lasers. In particular, the onset of the thermal runaway of c.w. threshold current, induced either by increasing the heat-sink temperature or by degradation processes, is found to occur at a current much less than predicted theoretically. Part of the reason for these inconsistencies is that at high temperatures there is a departure from the commonly assumed exponential dependence of pulsed threshold on junction temperature. However, it is the observation that the temperature rise of the active region is not directly proportional to the input power which explains why the experimental results are so different from the theoretical predictions. The results are discussed with reference to a model of multiple heat sources, with sources assuming different relative importance as the input power increases.
{"title":"Thermal properties of semiconductor lasers, and the interpretation of thermal-resistance measurements","authors":"S. Ritchie","doi":"10.1049/IJ-SSED:19790040","DOIUrl":"https://doi.org/10.1049/IJ-SSED:19790040","url":null,"abstract":"Conventional models of junction heating in semiconductor lasers have been considered, and are found to be inconsistent with the experimental observations on stripe-geometry double-heterojunction lasers. In particular, the onset of the thermal runaway of c.w. threshold current, induced either by increasing the heat-sink temperature or by degradation processes, is found to occur at a current much less than predicted theoretically. Part of the reason for these inconsistencies is that at high temperatures there is a departure from the commonly assumed exponential dependence of pulsed threshold on junction temperature. However, it is the observation that the temperature rise of the active region is not directly proportional to the input power which explains why the experimental results are so different from the theoretical predictions. The results are discussed with reference to a model of multiple heat sources, with sources assuming different relative importance as the input power increases.","PeriodicalId":127114,"journal":{"name":"Iee Journal on Solidstate and Electron Devices","volume":"293 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1979-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121085755","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1979-11-01DOI: 10.1049/IJ-SSED:19790045
D. Renner, J. Carroll
A new phase-plane analysis of transients in injection lasers is presented, which leads to general conditions for no ringing in the light output. For operation not meeting the general conditions, it is shown that a double-step current modulation of the laser can reduce the amplitude of the ringing. The result of this analysis is then applied to a laser with absorbing sections. It is shown that the enhanced superluminescence in these lasers will produce an effective double-step drive when a single-step drive is externally applied. This result then helps to explain why various kinds of lasers with absorbing section show little or no transient photon oscillations.
{"title":"Transients in injection lasers-phase-plane analysis and effects of absorbing sections","authors":"D. Renner, J. Carroll","doi":"10.1049/IJ-SSED:19790045","DOIUrl":"https://doi.org/10.1049/IJ-SSED:19790045","url":null,"abstract":"A new phase-plane analysis of transients in injection lasers is presented, which leads to general conditions for no ringing in the light output. For operation not meeting the general conditions, it is shown that a double-step current modulation of the laser can reduce the amplitude of the ringing. The result of this analysis is then applied to a laser with absorbing sections. It is shown that the enhanced superluminescence in these lasers will produce an effective double-step drive when a single-step drive is externally applied. This result then helps to explain why various kinds of lasers with absorbing section show little or no transient photon oscillations.","PeriodicalId":127114,"journal":{"name":"Iee Journal on Solidstate and Electron Devices","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1979-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126652756","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1979-11-01DOI: 10.1049/IJ-SSED:19790036
S. Hersee, A. Carter, R. Goodfellow, G. Hawkins, I. Griffith
This paper describes the growth and characterisation of double heterostructure multilayers of GalnAsP/InP for the fabrication of laser diodes emitting near 1-3μm. A single-phase growth technique has been employed enabling good uniformity, lattice match and wavelength control. The contact resistance profiling technique has been extensively used in the establishment of a growth procedure which effectively suppresses the diffusion of zinc from the heavily doped capping layer. Lasers fabricated from the material have shown good reproducibility, with pulsed room-temperature thresholds as low as 140 mA for 10 ?m wide oxide stripe devices.
{"title":"Growth and characterisation of GaInAsP/InP double heterostructure material for stripe-geometry lasers emitting near 1.3μm","authors":"S. Hersee, A. Carter, R. Goodfellow, G. Hawkins, I. Griffith","doi":"10.1049/IJ-SSED:19790036","DOIUrl":"https://doi.org/10.1049/IJ-SSED:19790036","url":null,"abstract":"This paper describes the growth and characterisation of double heterostructure multilayers of GalnAsP/InP for the fabrication of laser diodes emitting near 1-3μm. A single-phase growth technique has been employed enabling good uniformity, lattice match and wavelength control. The contact resistance profiling technique has been extensively used in the establishment of a growth procedure which effectively suppresses the diffusion of zinc from the heavily doped capping layer. Lasers fabricated from the material have shown good reproducibility, with pulsed room-temperature thresholds as low as 140 mA for 10 ?m wide oxide stripe devices.","PeriodicalId":127114,"journal":{"name":"Iee Journal on Solidstate and Electron Devices","volume":"2012 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1979-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133931123","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1979-11-01DOI: 10.1049/IJ-SSED.1979.0047
P. Ball, B. Culshaw
Reliable detection of a phase-modulated optical carrier has been demonstrated over 500 m of graded-index optical fibre using a semiconductor-laser source and mode-mode interference. The system performance is limited by the noise and spectral properties of the optical source. Spectral measurements indicate that transmission over several kilometres should be possible. This has direct significance for amplitude-modulated systems with semiconductor-laser sources as it implies that modal noise can occur at fibre connections up to several kilometres from the optical source
{"title":"Semiconductor laser sources for coherent optical-fibre systems","authors":"P. Ball, B. Culshaw","doi":"10.1049/IJ-SSED.1979.0047","DOIUrl":"https://doi.org/10.1049/IJ-SSED.1979.0047","url":null,"abstract":"Reliable detection of a phase-modulated optical carrier has been demonstrated over 500 m of graded-index optical fibre using a semiconductor-laser source and mode-mode interference. The system performance is limited by the noise and spectral properties of the optical source. Spectral measurements indicate that transmission over several kilometres should be possible. This has direct significance for amplitude-modulated systems with semiconductor-laser sources as it implies that modal noise can occur at fibre connections up to several kilometres from the optical source","PeriodicalId":127114,"journal":{"name":"Iee Journal on Solidstate and Electron Devices","volume":"111 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1979-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125570835","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1979-09-01DOI: 10.1049/IJ-SSED:19790026
L. Faraone, A. G. Nassibian, J. Simmons
The effect of gold recombination centres on the trapping state at the Si-SiO2interface, and in the bulk, has been studied. The technique involves applying a linear voltage-ramp to the m.o.s. device and measuring the resulting I/V characteristic. From the quasiequilibrium I/V curves, it is apparent that gold-doping produces a pronounced peak in the interfacial trap distribution occuring at energy Ev + 0.6eV with a density of Nss = 2.5 × 1011(cm2eV)−1. Subsequent non-steady-state I/V measurements are used to study the bulk recombination properties of gold, and thus determine a value for the capture cross-section (σp ≃ 1.1 × 10−15 cm2).
{"title":"The determination of interfacial and bulk properties of gold in m.o.s. structures using quasiequilibrium and non-steady-state linear voltage-ramp techniques","authors":"L. Faraone, A. G. Nassibian, J. Simmons","doi":"10.1049/IJ-SSED:19790026","DOIUrl":"https://doi.org/10.1049/IJ-SSED:19790026","url":null,"abstract":"The effect of gold recombination centres on the trapping state at the Si-SiO2interface, and in the bulk, has been studied. The technique involves applying a linear voltage-ramp to the m.o.s. device and measuring the resulting I/V characteristic. From the quasiequilibrium I/V curves, it is apparent that gold-doping produces a pronounced peak in the interfacial trap distribution occuring at energy Ev + 0.6eV with a density of Nss = 2.5 × 1011(cm2eV)−1. Subsequent non-steady-state I/V measurements are used to study the bulk recombination properties of gold, and thus determine a value for the capture cross-section (σp ≃ 1.1 × 10−15 cm2).","PeriodicalId":127114,"journal":{"name":"Iee Journal on Solidstate and Electron Devices","volume":"332 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1979-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122331349","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1979-09-01DOI: 10.1049/IJ-SSED.1979.0033
J. Forrest, A. Seeds
A theory of large-signal Impatt oscillator operation, including the effects of both constant and modulated optical carrier generation, is developed. This theory is related to easily measurable parameters of the particular device and predicts useful oscillator locking ranges for modest modulated optical-power levels. Computer simulations of practical device structures, under optical control, supplement the analytical work. The paper concludes with some recent results from an experiment in which optical subharmonic locking of an X-band Impatt oscillator has been achieved.
{"title":"Analysis of the optically controlled Impatt (Opcad) oscillator","authors":"J. Forrest, A. Seeds","doi":"10.1049/IJ-SSED.1979.0033","DOIUrl":"https://doi.org/10.1049/IJ-SSED.1979.0033","url":null,"abstract":"A theory of large-signal Impatt oscillator operation, including the effects of both constant and modulated optical carrier generation, is developed. This theory is related to easily measurable parameters of the particular device and predicts useful oscillator locking ranges for modest modulated optical-power levels. Computer simulations of practical device structures, under optical control, supplement the analytical work. The paper concludes with some recent results from an experiment in which optical subharmonic locking of an X-band Impatt oscillator has been achieved.","PeriodicalId":127114,"journal":{"name":"Iee Journal on Solidstate and Electron Devices","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1979-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114279559","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1979-09-01DOI: 10.1049/IJ-SSED.1979.0032
V. Harutunian, V. Buniatian
The noise characteristics of a semiconductor punchthrough structure are examined for operation under low-field conditions, i.e. constant mobility, and for trap levels in the bandgap of the semiconductor. It is shown that the noise measure is decreased under the influence of trapping of injected carriers, for the small-signal injection approximation. With the increase of the concentration of traps, the noise measure decreases, but the frequency band, where it takes place, narrows and is displaced to a lower frequency.
{"title":"The noise characteristics of baritt diodes with traps","authors":"V. Harutunian, V. Buniatian","doi":"10.1049/IJ-SSED.1979.0032","DOIUrl":"https://doi.org/10.1049/IJ-SSED.1979.0032","url":null,"abstract":"The noise characteristics of a semiconductor punchthrough structure are examined for operation under low-field conditions, i.e. constant mobility, and for trap levels in the bandgap of the semiconductor. It is shown that the noise measure is decreased under the influence of trapping of injected carriers, for the small-signal injection approximation. With the increase of the concentration of traps, the noise measure decreases, but the frequency band, where it takes place, narrows and is displaced to a lower frequency.","PeriodicalId":127114,"journal":{"name":"Iee Journal on Solidstate and Electron Devices","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1979-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130309471","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1979-09-01DOI: 10.1049/IJ-SSED:19790028
C. Moglestue
The V/I characteristics of a gallium arsenide dual-gate field-effect transistor have been simulated numerically, using the Monte Carlo method. The transconductances extracted from these characteristics agree with those from a real device of the same geometrical and physical description.
{"title":"Computer simulation of a dual gate GaAs field-effect transistor using the Monte Carlo method","authors":"C. Moglestue","doi":"10.1049/IJ-SSED:19790028","DOIUrl":"https://doi.org/10.1049/IJ-SSED:19790028","url":null,"abstract":"The V/I characteristics of a gallium arsenide dual-gate field-effect transistor have been simulated numerically, using the Monte Carlo method. The transconductances extracted from these characteristics agree with those from a real device of the same geometrical and physical description.","PeriodicalId":127114,"journal":{"name":"Iee Journal on Solidstate and Electron Devices","volume":" 10","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1979-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120831333","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1979-09-01DOI: 10.1049/IJ-SSED.1979.0030
J. Shannon
A transistor is proposed in which hot electrons cross a degenerate semiconductor base region and overcome a potential barrier in the bulk of the semiconductor which forms a collector. Structures in silicon corresponding to this concept have been fabricated using low-energy ion implantation and have given transistor action consistent with hot-electron transport.
{"title":"Hot-electron camel transistor","authors":"J. Shannon","doi":"10.1049/IJ-SSED.1979.0030","DOIUrl":"https://doi.org/10.1049/IJ-SSED.1979.0030","url":null,"abstract":"A transistor is proposed in which hot electrons cross a degenerate semiconductor base region and overcome a potential barrier in the bulk of the semiconductor which forms a collector. Structures in silicon corresponding to this concept have been fabricated using low-energy ion implantation and have given transistor action consistent with hot-electron transport.","PeriodicalId":127114,"journal":{"name":"Iee Journal on Solidstate and Electron Devices","volume":"335 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1979-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122819427","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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