Pub Date : 1979-09-01DOI: 10.1049/IJ-SSED.1979.0029
D. Schröder, G. Weinhausen
At frequencies above the range at which low-frequency-generation noise is dominant, thermal noise in the channel is the main noise source of a junction field-effect transistor. Starting from the well known current and continuity equations, the drain- and gate-noise spectra and their correlation coefficient are calculated by means of a series expansion, in a second-order approximation. The results are compared with calculations and measurements of other authors. There is good agreement with experiments, but differences exist with some of the earlier computations in the literature.
{"title":"Calculation of thermal noise in j.f.e.t.s","authors":"D. Schröder, G. Weinhausen","doi":"10.1049/IJ-SSED.1979.0029","DOIUrl":"https://doi.org/10.1049/IJ-SSED.1979.0029","url":null,"abstract":"At frequencies above the range at which low-frequency-generation noise is dominant, thermal noise in the channel is the main noise source of a junction field-effect transistor. Starting from the well known current and continuity equations, the drain- and gate-noise spectra and their correlation coefficient are calculated by means of a series expansion, in a second-order approximation. The results are compared with calculations and measurements of other authors. There is good agreement with experiments, but differences exist with some of the earlier computations in the literature.","PeriodicalId":127114,"journal":{"name":"Iee Journal on Solidstate and Electron Devices","volume":"92 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1979-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115728102","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1979-09-01DOI: 10.1049/IJ-SSED.1979.0027
B. Golja, A. G. Nassibian
The effects of Ar-ion implant gettering has been investigated using the linear voltage ramp applied to m.o.s. capacitors. A comparison is made with control (not implanted) samples and N+-ion Rutherford backscattering is used to examine the precipitation of generation impurities by the damaged layers. The gettering anneals were carried out over the temperature range 950°C?1100°C and for various times from 15 min to 120 min. It is shown that long gettering anneal times and high anneal temperatures both have a detrimental effect on minority-carrier lifetime.
{"title":"Ar ion implant damage gettering of generation impurities in silicon employing voltage ramping and nitrogen backscattering","authors":"B. Golja, A. G. Nassibian","doi":"10.1049/IJ-SSED.1979.0027","DOIUrl":"https://doi.org/10.1049/IJ-SSED.1979.0027","url":null,"abstract":"The effects of Ar-ion implant gettering has been investigated using the linear voltage ramp applied to m.o.s. capacitors. A comparison is made with control (not implanted) samples and N+-ion Rutherford backscattering is used to examine the precipitation of generation impurities by the damaged layers. The gettering anneals were carried out over the temperature range 950°C?1100°C and for various times from 15 min to 120 min. It is shown that long gettering anneal times and high anneal temperatures both have a detrimental effect on minority-carrier lifetime.","PeriodicalId":127114,"journal":{"name":"Iee Journal on Solidstate and Electron Devices","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1979-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126640469","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1979-09-01DOI: 10.1049/IJ-SSED:19790031
H. Tateno, S. Kataoka, K. Tomizawa
A theoretical investigation of the stationary behaviour of transferred electron devices with GaAs-type velocity-field characteristics has been carried out on an electron concentration field plane. Solutions over a wide range of doping concentration which satisfy the boundary conditions for n+-n-n+ structure can topologically be obtained using the method of the field of directions which was introduced by Boer and associates. The use of this method enable us not only to understand and predict a variety of device phenomena based on formation of an anode domain, but also to see the concept of instability.
{"title":"Topological analysis of stationary behaviour of transferred electron devices with n+-n-n+ structure","authors":"H. Tateno, S. Kataoka, K. Tomizawa","doi":"10.1049/IJ-SSED:19790031","DOIUrl":"https://doi.org/10.1049/IJ-SSED:19790031","url":null,"abstract":"A theoretical investigation of the stationary behaviour of transferred electron devices with GaAs-type velocity-field characteristics has been carried out on an electron concentration field plane. Solutions over a wide range of doping concentration which satisfy the boundary conditions for n+-n-n+ structure can topologically be obtained using the method of the field of directions which was introduced by Boer and associates. The use of this method enable us not only to understand and predict a variety of device phenomena based on formation of an anode domain, but also to see the concept of instability.","PeriodicalId":127114,"journal":{"name":"Iee Journal on Solidstate and Electron Devices","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1979-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132541570","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1979-09-01DOI: 10.1049/IJ-SSED.1979.0025
P.G.C. Allman, K. Board
The response of m.o.s. devices to a fast linear voltage ramp, when under illumination, is analysed. The presence of traps in the semiconductor bulk is taken into account, and it is found that bulk generation and photogeneration are similar, but not identical, effects. The devices exhibit a photoresponse up to a maximum value of light intensity, when saturation occurs, and no further light sensitivity is observed. Experimental data is presented for conditions when bulk generation is significant and insignificant, and good agreement is found in each case between theory and experiment.
{"title":"Nonequilibrium response of m.o.s. devices to a linear voltage ramp in the presence of illumination","authors":"P.G.C. Allman, K. Board","doi":"10.1049/IJ-SSED.1979.0025","DOIUrl":"https://doi.org/10.1049/IJ-SSED.1979.0025","url":null,"abstract":"The response of m.o.s. devices to a fast linear voltage ramp, when under illumination, is analysed. The presence of traps in the semiconductor bulk is taken into account, and it is found that bulk generation and photogeneration are similar, but not identical, effects. The devices exhibit a photoresponse up to a maximum value of light intensity, when saturation occurs, and no further light sensitivity is observed. Experimental data is presented for conditions when bulk generation is significant and insignificant, and good agreement is found in each case between theory and experiment.","PeriodicalId":127114,"journal":{"name":"Iee Journal on Solidstate and Electron Devices","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1979-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125805306","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1979-07-01DOI: 10.1049/IJ-SSED:19790024
Amit Bhattacharyya, S. Jindal, S. Subramanian
This paper studies the nature and degree of variation in current gain caused by perturbations in processing and material parameters in normal and I2L (inverse) transistors, formed by the double-diffusion process. The influence of predeposition and drive-in cycle, surface recombination velocity, emitter contact area and epitaxial-layer concentration has been estimated. It is shown that it is possible to recover a change in gain caused by perturbation in a particular parameter. Current-gain variability is found to be a characteristic of device design. It is desirable to optimise the design, both from the viewpoint of the specified gain and its expected variability.
{"title":"Current gain variability in normal and I2L bipolar transistors","authors":"Amit Bhattacharyya, S. Jindal, S. Subramanian","doi":"10.1049/IJ-SSED:19790024","DOIUrl":"https://doi.org/10.1049/IJ-SSED:19790024","url":null,"abstract":"This paper studies the nature and degree of variation in current gain caused by perturbations in processing and material parameters in normal and I2L (inverse) transistors, formed by the double-diffusion process. The influence of predeposition and drive-in cycle, surface recombination velocity, emitter contact area and epitaxial-layer concentration has been estimated. It is shown that it is possible to recover a change in gain caused by perturbation in a particular parameter. Current-gain variability is found to be a characteristic of device design. It is desirable to optimise the design, both from the viewpoint of the specified gain and its expected variability.","PeriodicalId":127114,"journal":{"name":"Iee Journal on Solidstate and Electron Devices","volume":"61 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1979-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131835734","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1979-07-01DOI: 10.1049/IJ-SSED:19790020
A. Vanoverschelde, G. Salmer
Microwave properties of GaAs and InP punchthrough diodes in the millimeter-wave range are investigated in this paper. By means of an exact large-signal computer simulation, taking into account the carrier velocity-field dependence, diffusion phenomena and a realistic doping profile, the influence of the negative differential mobility on oscillation performance is studied. Large negative resistances can then be obtained with well-designed n+-p-n-n+ structures. At a frequency of 40 GHz, optimum output powers of 20mW and 120mW have been calculated for GaAs and InP materials, respectively. The corresponding non-linear resistances are -7Ω and -7.5 Ω. An interesting use can then be expected as a self-oscillating mixer or as Doppler radar in the millimetre-wave range.
{"title":"GaAs and InP punchthrough diodes as oscillators in the millimetre-wave range","authors":"A. Vanoverschelde, G. Salmer","doi":"10.1049/IJ-SSED:19790020","DOIUrl":"https://doi.org/10.1049/IJ-SSED:19790020","url":null,"abstract":"Microwave properties of GaAs and InP punchthrough diodes in the millimeter-wave range are investigated in this paper. By means of an exact large-signal computer simulation, taking into account the carrier velocity-field dependence, diffusion phenomena and a realistic doping profile, the influence of the negative differential mobility on oscillation performance is studied. Large negative resistances can then be obtained with well-designed n+-p-n-n+ structures. At a frequency of 40 GHz, optimum output powers of 20mW and 120mW have been calculated for GaAs and InP materials, respectively. The corresponding non-linear resistances are -7Ω and -7.5 Ω. An interesting use can then be expected as a self-oscillating mixer or as Doppler radar in the millimetre-wave range.","PeriodicalId":127114,"journal":{"name":"Iee Journal on Solidstate and Electron Devices","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1979-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121332641","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1979-07-01DOI: 10.1049/IJ-SSED.1979.0021
C. Morandi
Experiments show that there is a strong influence of the clock waveform on the performance on c.c.d. split-electrode transversal filters if the splits are defined by means of channel-stop islands, which do not allow any surface-potential equilibration along the gate. The effect is absent when this equilibration is allowed by means of a suitably placed floating diffusion which connects the channels below the two portions of the split electrode. The process is modelled with an effective difference of threshold voltages between the two sections of the electrode controlling the transfer. It is thus possible to predict the dependence of the stopband attenuation of the filter on the slope of the clock pulses.
{"title":"Influence of the clock waveforms on the performance of split-electrode c.c.d. transversal filters","authors":"C. Morandi","doi":"10.1049/IJ-SSED.1979.0021","DOIUrl":"https://doi.org/10.1049/IJ-SSED.1979.0021","url":null,"abstract":"Experiments show that there is a strong influence of the clock waveform on the performance on c.c.d. split-electrode transversal filters if the splits are defined by means of channel-stop islands, which do not allow any surface-potential equilibration along the gate. The effect is absent when this equilibration is allowed by means of a suitably placed floating diffusion which connects the channels below the two portions of the split electrode. The process is modelled with an effective difference of threshold voltages between the two sections of the electrode controlling the transfer. It is thus possible to predict the dependence of the stopband attenuation of the filter on the slope of the clock pulses.","PeriodicalId":127114,"journal":{"name":"Iee Journal on Solidstate and Electron Devices","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1979-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130949762","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1979-07-01DOI: 10.1049/IJ-SSED:19790019
S. Moustakas, J. Hullett, R. B. Calligaro, A. Nassibian, D. Payne
This paper considers the mechanism of optical switching and the possible utilisation of the metal tunnel-insulator n-p+ silicon device in optical communication systems. The pertinent design approaches are described. Under optical excitation, photo holes and electrons generated in the surface depletion region, or within diffusion range, will eventually be separated by the electric field and produce an increment in the forward current. Those hole-electron pairs generated in the junction region, or within diffusion range, produce a photovoltaic increase in the p+-n junction bias. Switching is induced optically, as it is electrically, by the build up of holes at the insulator-semiconductor interface. This paper employs the 1-dimensional diffusion equation to derive the light generated minority Carrier distributions and diffusion currents in the neutral n and p+ regions, together with the currents in the surface and p+-n junction depletion regions. The calculated values of both the drift and diffusion currents compare favourably with those observed experimentally.
{"title":"Optical switching in metal tunnel-insulator n-p + silicon devices","authors":"S. Moustakas, J. Hullett, R. B. Calligaro, A. Nassibian, D. Payne","doi":"10.1049/IJ-SSED:19790019","DOIUrl":"https://doi.org/10.1049/IJ-SSED:19790019","url":null,"abstract":"This paper considers the mechanism of optical switching and the possible utilisation of the metal tunnel-insulator n-p+ silicon device in optical communication systems. The pertinent design approaches are described. Under optical excitation, photo holes and electrons generated in the surface depletion region, or within diffusion range, will eventually be separated by the electric field and produce an increment in the forward current. Those hole-electron pairs generated in the junction region, or within diffusion range, produce a photovoltaic increase in the p+-n junction bias. Switching is induced optically, as it is electrically, by the build up of holes at the insulator-semiconductor interface. This paper employs the 1-dimensional diffusion equation to derive the light generated minority Carrier distributions and diffusion currents in the neutral n and p+ regions, together with the currents in the surface and p+-n junction depletion regions. The calculated values of both the drift and diffusion currents compare favourably with those observed experimentally.","PeriodicalId":127114,"journal":{"name":"Iee Journal on Solidstate and Electron Devices","volume":"81 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1979-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115390541","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1979-05-01DOI: 10.1049/IJ-SSED:19790013
O. Nielsen
Current/voltage characteristics obtained under dark and illuminated conditions have been examined for Al-p-Si M.I.S. solar cells. The results show that the voltage drop across the oxide is changed, owing to the increased surface concentration of minority carriers when going from dark to illuminated conditions. The inverse slopes nof the linear region have been measured and the interface-state densities NSS have been calculated. From the voltage changes and interface state densities obtained, the changes in the interface-state Fermi levels have been calculated to be about 0.05–0.1 eV for short-circuit currents of 25–30 mA cm−2
研究了Al-p-Si M.I.S.太阳能电池在黑暗和光照条件下获得的电流/电压特性。结果表明，由于少数载流子的表面浓度增加，当从黑暗到照明条件下，氧化物上的电压降发生了变化。测量了非线性区域的逆斜率，计算了界面态密度NSS。根据得到的电压变化和界面态密度，计算出短路电流为25-30 mA cm−2时，界面态费米能级的变化约为0.05-0.1 eV
{"title":"The change in the interface-state Fermi level of M.I.S. solar cells when going from dark to illuminated conditions","authors":"O. Nielsen","doi":"10.1049/IJ-SSED:19790013","DOIUrl":"https://doi.org/10.1049/IJ-SSED:19790013","url":null,"abstract":"Current/voltage characteristics obtained under dark and illuminated conditions have been examined for Al-p-Si M.I.S. solar cells. The results show that the voltage drop across the oxide is changed, owing to the increased surface concentration of minority carriers when going from dark to illuminated conditions. The inverse slopes nof the linear region have been measured and the interface-state densities NSS have been calculated. From the voltage changes and interface state densities obtained, the changes in the interface-state Fermi levels have been calculated to be about 0.05–0.1 eV for short-circuit currents of 25–30 mA cm−2","PeriodicalId":127114,"journal":{"name":"Iee Journal on Solidstate and Electron Devices","volume":"139 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1979-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124989223","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1979-05-01DOI: 10.1049/IJ-SSED.1979.0018
D. Noorlag, S. Middelhoek
Based on the lateral photoeffect it is possible to construct photodetectors of which the output is dependent on the light-spot position. In the literature, a number of these position-sensitive detectors (p.s.d.) based on the forward or reverse characteristics of a photodiode have been presented. The integration of a p.s.d. with signal processing circuits on one silicon chip may eventually lead to very versatile, high-quality low-cost sensors. Therefore it is necessary to develop a p.s.d. structure which can be fabricated with standard planar silicon technology. In this paper such a novel reverse-biased p.s.d. structure is presented. A 6 × 6 mm2 p.s.d. was made, and an overall linearity better than 0.5% full scale and a photosensitivity of 0.5 A/W for an He-Ne laser were obtained. The dependence of the position sensitivity on background illumination and temperature as well as resolution are similar to those of currently known linear p.s.d.s.
{"title":"Two-dimensional position-sensitive photodetector with high linearity made with standard i.c.-technology","authors":"D. Noorlag, S. Middelhoek","doi":"10.1049/IJ-SSED.1979.0018","DOIUrl":"https://doi.org/10.1049/IJ-SSED.1979.0018","url":null,"abstract":"Based on the lateral photoeffect it is possible to construct photodetectors of which the output is dependent on the light-spot position. In the literature, a number of these position-sensitive detectors (p.s.d.) based on the forward or reverse characteristics of a photodiode have been presented. The integration of a p.s.d. with signal processing circuits on one silicon chip may eventually lead to very versatile, high-quality low-cost sensors. Therefore it is necessary to develop a p.s.d. structure which can be fabricated with standard planar silicon technology. In this paper such a novel reverse-biased p.s.d. structure is presented. A 6 × 6 mm2 p.s.d. was made, and an overall linearity better than 0.5% full scale and a photosensitivity of 0.5 A/W for an He-Ne laser were obtained. The dependence of the position sensitivity on background illumination and temperature as well as resolution are similar to those of currently known linear p.s.d.s.","PeriodicalId":127114,"journal":{"name":"Iee Journal on Solidstate and Electron Devices","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1979-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133893314","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：