Pub Date : 1993-08-02DOI: 10.1109/CORNEL.1993.303102
R. Malik, Y. Anand, M. Micovic, M. Geva, R. Ryan
Significant improvements in the reliability as well as yield and reproducibility of GaAs planar doped barrier (PDB) microwave detector diodes have been achieved by substituting carbon-doped acceptor regions in place of conventional beryllium acceptor dopant. The superior characteristics of the C-doped PDB diodes are thought to be related to the hyperabrupt and stable carbon acceptor doping spikes (10-60 A) obtained in the n/sup +/-i-p/sup +/-i-n/sup +/ doping profile grown by molecular beam epitaxy (MBE). Mesa geometry PDB diodes (10-20 micron diameter) in micropill packages were RF tested at 10 and 35 GHz. Excellent tangential sensitivity up to -58 dBm was measured with a detector video impedance of 2-50 kohms depending upon barrier height. The electrostatic discharge (ESD) failure threshold voltages were found to be much higher for the PDB diodes (3500 V) in comparison to Schottky detector diodes (300 V).<>
{"title":"Performance and reliability characteristics of GaAs planar doped barrier detector diodes using carbon-doped acceptor spikes grown by molecular beam epitaxy","authors":"R. Malik, Y. Anand, M. Micovic, M. Geva, R. Ryan","doi":"10.1109/CORNEL.1993.303102","DOIUrl":"https://doi.org/10.1109/CORNEL.1993.303102","url":null,"abstract":"Significant improvements in the reliability as well as yield and reproducibility of GaAs planar doped barrier (PDB) microwave detector diodes have been achieved by substituting carbon-doped acceptor regions in place of conventional beryllium acceptor dopant. The superior characteristics of the C-doped PDB diodes are thought to be related to the hyperabrupt and stable carbon acceptor doping spikes (10-60 A) obtained in the n/sup +/-i-p/sup +/-i-n/sup +/ doping profile grown by molecular beam epitaxy (MBE). Mesa geometry PDB diodes (10-20 micron diameter) in micropill packages were RF tested at 10 and 35 GHz. Excellent tangential sensitivity up to -58 dBm was measured with a detector video impedance of 2-50 kohms depending upon barrier height. The electrostatic discharge (ESD) failure threshold voltages were found to be much higher for the PDB diodes (3500 V) in comparison to Schottky detector diodes (300 V).<<ETX>>","PeriodicalId":129440,"journal":{"name":"Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-08-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129676503","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-08-02DOI: 10.1109/CORNEL.1993.303111
A. Gutierrez-Aitken, P. Bhattacharya, Y.C. Chen, D. Pavlidis, T. Brock
The performance characteristics of transimpedance and transimpedance/voltage photoreceivers using an In/sub 0.53/Ga/sub 0.47/As p-i-n photodiode integrated with a 0.1 /spl mu/m gate length regrown pseudomorphic In/sub 0.60/Ga/sub 0.40/As MODFET realized by MBE have been investigated. The photodiode exhibits very low dark current and a responsivity of 0.6 A/W at /spl lambda/=1.55 /spl mu/m. The regrown MODFETs have extrinsic transconductance values as high as 610 mS/mm and channel currents up to 350 mA/mm at a drain bias of 1.5 V. The measured temporal response of the photoreceiver with a transimpedance amplifier exhibits a FWHM value of 90 ps and a transimpedance gain of 45 dB/spl Omega/ with a 800 /spl Omega/ feedback resistor. This photoreceiver demonstrated 24 dB optical-to-electrical conversion gain at 9.3 GHz. The photoreceiver with a transimpedance/voltage amplifier shows a FWHM of 200 ps and a transimpedance gain of 63 dB/spl Omega/ with a 1.2 K/spl Omega/ feedback resistor.<>
{"title":"High speed monolithically integrated pin-MODFET transimpedance photoreceivers","authors":"A. Gutierrez-Aitken, P. Bhattacharya, Y.C. Chen, D. Pavlidis, T. Brock","doi":"10.1109/CORNEL.1993.303111","DOIUrl":"https://doi.org/10.1109/CORNEL.1993.303111","url":null,"abstract":"The performance characteristics of transimpedance and transimpedance/voltage photoreceivers using an In/sub 0.53/Ga/sub 0.47/As p-i-n photodiode integrated with a 0.1 /spl mu/m gate length regrown pseudomorphic In/sub 0.60/Ga/sub 0.40/As MODFET realized by MBE have been investigated. The photodiode exhibits very low dark current and a responsivity of 0.6 A/W at /spl lambda/=1.55 /spl mu/m. The regrown MODFETs have extrinsic transconductance values as high as 610 mS/mm and channel currents up to 350 mA/mm at a drain bias of 1.5 V. The measured temporal response of the photoreceiver with a transimpedance amplifier exhibits a FWHM value of 90 ps and a transimpedance gain of 45 dB/spl Omega/ with a 800 /spl Omega/ feedback resistor. This photoreceiver demonstrated 24 dB optical-to-electrical conversion gain at 9.3 GHz. The photoreceiver with a transimpedance/voltage amplifier shows a FWHM of 200 ps and a transimpedance gain of 63 dB/spl Omega/ with a 1.2 K/spl Omega/ feedback resistor.<<ETX>>","PeriodicalId":129440,"journal":{"name":"Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits","volume":"140 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-08-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115991071","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-08-02DOI: 10.1109/CORNEL.1993.303122
M. Feuer, S. Shunk, P.R. Smith, H. H. Law, C. Burrus, M. Nuss
Optoelectronic S-parameter measurements offer the bandwidth needed to characterize today's state-of-the-art transistors, but have not yet achieved the throughput or accuracy provided by a vector network analyzer with microwave probes. In this paper, we discuss a new approach in which movable optoelectronic probes, calibrated by testing simple standard devices, are stepped around the wafer to provide accurate, high-throughput S-parameter measurements. Sub-picosecond laser pulses drive photoconductive switches on the probe tips, to generate electrical stimulus pulses and define sampling intervals, and signals are transferred to and from the wafer under test by coplanar waveguide transmission lines and plated contact bumps. The probes provide electrical pulses as short as 3 psec (FWHM), while maintaining a broadband 50 ohm termination to ensure stability of the device under test. Since probe flexure under contact significantly disturbs alignment of free-space beams, fiber-optic input is used to improve reproducibility. Analysis by vector error correction in the frequency domain removes systematic errors and separates the incident and reflected pulses without subjective time-window gating. We have demonstrated precise measurement of the complex reflection coefficient S/sub 11/ at frequencies up to 175 GHz. Noise simulations have been performed to investigate the effect of various system parameters on the measurement uncertainty and useful bandwidth for S-parameter tests.<>
{"title":"Broadband optoelectronic wafer probing","authors":"M. Feuer, S. Shunk, P.R. Smith, H. H. Law, C. Burrus, M. Nuss","doi":"10.1109/CORNEL.1993.303122","DOIUrl":"https://doi.org/10.1109/CORNEL.1993.303122","url":null,"abstract":"Optoelectronic S-parameter measurements offer the bandwidth needed to characterize today's state-of-the-art transistors, but have not yet achieved the throughput or accuracy provided by a vector network analyzer with microwave probes. In this paper, we discuss a new approach in which movable optoelectronic probes, calibrated by testing simple standard devices, are stepped around the wafer to provide accurate, high-throughput S-parameter measurements. Sub-picosecond laser pulses drive photoconductive switches on the probe tips, to generate electrical stimulus pulses and define sampling intervals, and signals are transferred to and from the wafer under test by coplanar waveguide transmission lines and plated contact bumps. The probes provide electrical pulses as short as 3 psec (FWHM), while maintaining a broadband 50 ohm termination to ensure stability of the device under test. Since probe flexure under contact significantly disturbs alignment of free-space beams, fiber-optic input is used to improve reproducibility. Analysis by vector error correction in the frequency domain removes systematic errors and separates the incident and reflected pulses without subjective time-window gating. We have demonstrated precise measurement of the complex reflection coefficient S/sub 11/ at frequencies up to 175 GHz. Noise simulations have been performed to investigate the effect of various system parameters on the measurement uncertainty and useful bandwidth for S-parameter tests.<<ETX>>","PeriodicalId":129440,"journal":{"name":"Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-08-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122202141","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-08-02DOI: 10.1109/CORNEL.1993.303061
M. Rodwell, R. Yu, M. Reddy, J. Pusl, S. Allen, M. Case, U. Bhattacharya
We report systems for network measurements at millimeter-wave frequencies. Active probes are used for on-wafer measurements to approximately 150 GHz. The active probes incorporate monolithic GaAs mm-wave network analysis circuits (comprising a nonlinear transmission line stimulus signal generator and a directional sampling circuit) and low-loss, rugged quartz coplanar-waveguide probe tips. Wideband transmitter and receiver integrated circuits interfaced to frequency-independent antennas, are used for free-space transmission measurements to approximately 250 GHz.<>
{"title":"Millimeter-wave network analysis using nonlinear transmission lines","authors":"M. Rodwell, R. Yu, M. Reddy, J. Pusl, S. Allen, M. Case, U. Bhattacharya","doi":"10.1109/CORNEL.1993.303061","DOIUrl":"https://doi.org/10.1109/CORNEL.1993.303061","url":null,"abstract":"We report systems for network measurements at millimeter-wave frequencies. Active probes are used for on-wafer measurements to approximately 150 GHz. The active probes incorporate monolithic GaAs mm-wave network analysis circuits (comprising a nonlinear transmission line stimulus signal generator and a directional sampling circuit) and low-loss, rugged quartz coplanar-waveguide probe tips. Wideband transmitter and receiver integrated circuits interfaced to frequency-independent antennas, are used for free-space transmission measurements to approximately 250 GHz.<<ETX>>","PeriodicalId":129440,"journal":{"name":"Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits","volume":"80 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-08-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133018087","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-08-02DOI: 10.1109/CORNEL.1993.303087
Chien-Chung Chen, R. Mains, G. Haddad, H. Eisele
A numerical simulation program for two-terminal transit-time devices based on the energy-momentum transport model, with valence band to conduction band tunneling phenomena incorporated, has been developed. This program can deliver accurate TUNNETT and MITATT device simulation results in the millimeter and submillimeter range, and therefore provides a useful tool for high frequency device structure design and optimization. Simulation results for GaAs TUNNETT and MITATT devices for frequencies above 100 GHz are presented. As simulation results show, the negative resistance of the device decreases rapidly as the operating frequency increases. Under such circumstances, the contact resistance severely degrades the device's RF performance. When a diode's negative resistance becomes lower than the contact resistance, no RF power can be generated. To overcome this difficulty, device structures using no ohmic contacts are investigated. In these devices, ohmic contacts are replaced by Schottky contacts, and also p-n junctions are replaced by Schottky junctions for single-drift structures. Since the metal-semiconductor contact resistance is eliminated or greatly reduced in such devices, they are very promising as RF power sources at extremely high frequencies.<>
{"title":"Structure and simulation of GaAs TUNNETT and MITATT devices for frequencies above 100 GHz","authors":"Chien-Chung Chen, R. Mains, G. Haddad, H. Eisele","doi":"10.1109/CORNEL.1993.303087","DOIUrl":"https://doi.org/10.1109/CORNEL.1993.303087","url":null,"abstract":"A numerical simulation program for two-terminal transit-time devices based on the energy-momentum transport model, with valence band to conduction band tunneling phenomena incorporated, has been developed. This program can deliver accurate TUNNETT and MITATT device simulation results in the millimeter and submillimeter range, and therefore provides a useful tool for high frequency device structure design and optimization. Simulation results for GaAs TUNNETT and MITATT devices for frequencies above 100 GHz are presented. As simulation results show, the negative resistance of the device decreases rapidly as the operating frequency increases. Under such circumstances, the contact resistance severely degrades the device's RF performance. When a diode's negative resistance becomes lower than the contact resistance, no RF power can be generated. To overcome this difficulty, device structures using no ohmic contacts are investigated. In these devices, ohmic contacts are replaced by Schottky contacts, and also p-n junctions are replaced by Schottky junctions for single-drift structures. Since the metal-semiconductor contact resistance is eliminated or greatly reduced in such devices, they are very promising as RF power sources at extremely high frequencies.<<ETX>>","PeriodicalId":129440,"journal":{"name":"Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits","volume":"2020 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-08-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133161068","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-08-02DOI: 10.1109/CORNEL.1993.303116
M. Shin, G. Bilbro, R. Trew
Large signal RF and DC performance of n-type 6H-SiC and p-type diamond MESFETs has been simulated at various operating temperatures by a large-signal RF simulator using the harmonic balance technique and the two-dimensional device simulator, PISCES-IIB. The RF performance of SiC MESFET is predicted to be optimal in a temperature range slightly higher than room temperature. At room temperature the simulated SiC MESFET exhibits an output power of 3.5 W/mm for an operating frequency of 8 GHz with 16.5 dB gain and 44% power-added efficiency at 24 dBm input power. In contrast to the SiC MESFET, the RF performance of the diamond MESFET is improved with temperature, but the current level is much lower than that in SiC in the entire temperature region investigated. The very different temperature dependencies of DC and RF performance in SiC and diamond MESFETs are attributed to the significant difference in the dopant ionization energies in SiC and diamond.<>
{"title":"High temperature operation of n-type 6H-SiC and p-type diamond MESFETs","authors":"M. Shin, G. Bilbro, R. Trew","doi":"10.1109/CORNEL.1993.303116","DOIUrl":"https://doi.org/10.1109/CORNEL.1993.303116","url":null,"abstract":"Large signal RF and DC performance of n-type 6H-SiC and p-type diamond MESFETs has been simulated at various operating temperatures by a large-signal RF simulator using the harmonic balance technique and the two-dimensional device simulator, PISCES-IIB. The RF performance of SiC MESFET is predicted to be optimal in a temperature range slightly higher than room temperature. At room temperature the simulated SiC MESFET exhibits an output power of 3.5 W/mm for an operating frequency of 8 GHz with 16.5 dB gain and 44% power-added efficiency at 24 dBm input power. In contrast to the SiC MESFET, the RF performance of the diamond MESFET is improved with temperature, but the current level is much lower than that in SiC in the entire temperature region investigated. The very different temperature dependencies of DC and RF performance in SiC and diamond MESFETs are attributed to the significant difference in the dopant ionization energies in SiC and diamond.<<ETX>>","PeriodicalId":129440,"journal":{"name":"Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-08-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117087628","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-08-02DOI: 10.1109/CORNEL.1993.303069
J. Cowles, W. Chen, G. Munns, G. Haddad
InAlAs/InGaAs single(S) and double(D) heterojunction bipolar transistors (HBTs) have been grown by Chemical Beam Epitaxy (CBE). The DHBT features an InGaAsP precollector that greatly increases the breakdown voltage from 2V to 8V and decreases the collector emitter offset voltage from 360mV to 210mV in comparison to the SHBT. The common emitter current gain /spl beta/ remains high in both structures. Microwave measurements performed on the DHBT reveal that f/sub t/ increases monotonically with J/sub c/ up to at least 10/sup 5/ A/cm/sup 2/ showing no signs of base pushout. These results show that CBE grown DHBTs are promising devices for high power applications.<>
{"title":"InAlAs/InGaAs(P) double heterojunction bipolar transistors with high breakdown voltage grown by chemical beam epitaxy (CBE)","authors":"J. Cowles, W. Chen, G. Munns, G. Haddad","doi":"10.1109/CORNEL.1993.303069","DOIUrl":"https://doi.org/10.1109/CORNEL.1993.303069","url":null,"abstract":"InAlAs/InGaAs single(S) and double(D) heterojunction bipolar transistors (HBTs) have been grown by Chemical Beam Epitaxy (CBE). The DHBT features an InGaAsP precollector that greatly increases the breakdown voltage from 2V to 8V and decreases the collector emitter offset voltage from 360mV to 210mV in comparison to the SHBT. The common emitter current gain /spl beta/ remains high in both structures. Microwave measurements performed on the DHBT reveal that f/sub t/ increases monotonically with J/sub c/ up to at least 10/sup 5/ A/cm/sup 2/ showing no signs of base pushout. These results show that CBE grown DHBTs are promising devices for high power applications.<<ETX>>","PeriodicalId":129440,"journal":{"name":"Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-08-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115454130","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-08-02DOI: 10.1109/CORNEL.1993.303127
J. Dickmann, M. Berg, T. Hackbarth, R. Deufel, H. Daembkes, F. Scholz, M. Moser
In this paper we report on our investigation of the introduction of a highly p-doped very thin surface layer in combination with GaInP as the wide bandgap material in order to improve the breakdown voltage of GaAs based pseudomorphic MODFETs without deteriorating other device performances. In order to proof the quality of this approach we compare the device performance of the new device with that of a conventional AlGaAs/InGaAs MODFET also having a p/sup +/-surface layer. The device performances of AlGaAs/InGaAs and GaInP/InGaAs devices with 1.8 /spl mu/m gate length are, g/sub mmax/=224mS/mm, 200mS/mm, I/sub DSmax/=300mA/mm, 400 mA/mm, V/sub BrDG/ (I/sub G/=1 mA/mm)=10 V, 14 V, f/sub T/=15 GHz, 12 GHz, f/sub max/=59 GHz, 42 GHz, respectively.<>
{"title":"p/sup +/-thin surface layer Schottky-barrier enhanced high speed pseudomorphic Al/sub 0.25/Ga/sub 0.75/As/In/sub 0.15/Ga/sub 0.85/As and Ga/sub 0.5/In/sub 0.5/P/In/sub 0.15/Ga/sub 0.85/As MODFETs","authors":"J. Dickmann, M. Berg, T. Hackbarth, R. Deufel, H. Daembkes, F. Scholz, M. Moser","doi":"10.1109/CORNEL.1993.303127","DOIUrl":"https://doi.org/10.1109/CORNEL.1993.303127","url":null,"abstract":"In this paper we report on our investigation of the introduction of a highly p-doped very thin surface layer in combination with GaInP as the wide bandgap material in order to improve the breakdown voltage of GaAs based pseudomorphic MODFETs without deteriorating other device performances. In order to proof the quality of this approach we compare the device performance of the new device with that of a conventional AlGaAs/InGaAs MODFET also having a p/sup +/-surface layer. The device performances of AlGaAs/InGaAs and GaInP/InGaAs devices with 1.8 /spl mu/m gate length are, g/sub mmax/=224mS/mm, 200mS/mm, I/sub DSmax/=300mA/mm, 400 mA/mm, V/sub BrDG/ (I/sub G/=1 mA/mm)=10 V, 14 V, f/sub T/=15 GHz, 12 GHz, f/sub max/=59 GHz, 42 GHz, respectively.<<ETX>>","PeriodicalId":129440,"journal":{"name":"Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits","volume":"160 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-08-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114768847","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-08-02DOI: 10.1109/CORNEL.1993.303067
L.W. Yang, S. Fu, B. Clark, R.S. Brozovich, H. Lin, S. Liu, P. Chao, F. Ren, C. Abernathy, S. Pearton, J. Lothian, P. Wisk, T.R. Fullowan, T. Chiu, S. Pei
The results of experimental study and design criteria of high efficiency power heterojunction bipolar transistors (HBTs) are reported and discussed. Self-aligned npn HBTs fabricated by dry process technology have shown excellent device characteristics with low collector offset voltage (<150 mV) and low knee voltage (<0.7 V), and excellent high-frequency responses well into the millimeter-wave range. The FET-like device topology provides a means to preserve the power gain in device scaling for large emitter area. At X-band (10 GHz), an 8-cell common-base (CB) power transistor with emitter area of 240 /spl mu/m/sup 2/ demonstrated 17.2-17.5 dB gain. The 12-cell (360 /spl mu/m/sup 2/) common-emitter (CE) HBTs with a breakdown voltage (BV/sub ceo/) of 11 V delivered 0.53 W output power with 57% power added efficiency (P.A.E.) and 11.3 dB power gain at 4 GHz. Peak power of 0.68 W, P.A.E. of 52%, and 10.3 dB power gain also was achieved at a collector current density of 5.5/spl times/10/sup 4/ A/cm/sup 2/.<>
{"title":"High microwave power performance of self-aligned InGaP/GaAs heterojunction bipolar transistors","authors":"L.W. Yang, S. Fu, B. Clark, R.S. Brozovich, H. Lin, S. Liu, P. Chao, F. Ren, C. Abernathy, S. Pearton, J. Lothian, P. Wisk, T.R. Fullowan, T. Chiu, S. Pei","doi":"10.1109/CORNEL.1993.303067","DOIUrl":"https://doi.org/10.1109/CORNEL.1993.303067","url":null,"abstract":"The results of experimental study and design criteria of high efficiency power heterojunction bipolar transistors (HBTs) are reported and discussed. Self-aligned npn HBTs fabricated by dry process technology have shown excellent device characteristics with low collector offset voltage (<150 mV) and low knee voltage (<0.7 V), and excellent high-frequency responses well into the millimeter-wave range. The FET-like device topology provides a means to preserve the power gain in device scaling for large emitter area. At X-band (10 GHz), an 8-cell common-base (CB) power transistor with emitter area of 240 /spl mu/m/sup 2/ demonstrated 17.2-17.5 dB gain. The 12-cell (360 /spl mu/m/sup 2/) common-emitter (CE) HBTs with a breakdown voltage (BV/sub ceo/) of 11 V delivered 0.53 W output power with 57% power added efficiency (P.A.E.) and 11.3 dB power gain at 4 GHz. Peak power of 0.68 W, P.A.E. of 52%, and 10.3 dB power gain also was achieved at a collector current density of 5.5/spl times/10/sup 4/ A/cm/sup 2/.<<ETX>>","PeriodicalId":129440,"journal":{"name":"Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-08-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125175237","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-08-02DOI: 10.1109/CORNEL.1993.303121
R. York, Rajeev J Ram
A preliminary investigation of quasi-optical frequency conversion arrays is described. Using a diode loaded dipole placed between two parallel conducting plates to simulate an array, we were able to demonstrate enhanced conversion efficiency into the second harmonic and obtain spontaneous parametric oscillation for certain array geometries. Sub-harmonic parametric oscillation was achieved by strongly driving the nonlinear antenna at a single pump frequency while the cavity length was adjusted for resonance at a subharmonic, and a well-defined threshold for this parametric down-conversion was observed.<>
{"title":"Quasi-optical frequency conversion arrays","authors":"R. York, Rajeev J Ram","doi":"10.1109/CORNEL.1993.303121","DOIUrl":"https://doi.org/10.1109/CORNEL.1993.303121","url":null,"abstract":"A preliminary investigation of quasi-optical frequency conversion arrays is described. Using a diode loaded dipole placed between two parallel conducting plates to simulate an array, we were able to demonstrate enhanced conversion efficiency into the second harmonic and obtain spontaneous parametric oscillation for certain array geometries. Sub-harmonic parametric oscillation was achieved by strongly driving the nonlinear antenna at a single pump frequency while the cavity length was adjusted for resonance at a subharmonic, and a well-defined threshold for this parametric down-conversion was observed.<<ETX>>","PeriodicalId":129440,"journal":{"name":"Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-08-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123612057","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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