Pub Date : 1993-08-02DOI: 10.1109/CORNEL.1993.303093
B. Meskoob, S. Prasad
Although large-signal models for GaAs MESFETs have been developed extensively, the same is not true for heterojunction bipolar transistors (HBT's). A first-order model, based on first-order device physics, is used for harmonic distortion analysis of an InGaAs/InAlAs/InP inverted HBT. It is shown that the first-order model is adequate at medium power levels and inadequate at higher power levels where the device is driven into hard saturation and cutoff.<>
{"title":"Application of the first-order bipolar model to harmonic distortion analysis of HBT's","authors":"B. Meskoob, S. Prasad","doi":"10.1109/CORNEL.1993.303093","DOIUrl":"https://doi.org/10.1109/CORNEL.1993.303093","url":null,"abstract":"Although large-signal models for GaAs MESFETs have been developed extensively, the same is not true for heterojunction bipolar transistors (HBT's). A first-order model, based on first-order device physics, is used for harmonic distortion analysis of an InGaAs/InAlAs/InP inverted HBT. It is shown that the first-order model is adequate at medium power levels and inadequate at higher power levels where the device is driven into hard saturation and cutoff.<<ETX>>","PeriodicalId":129440,"journal":{"name":"Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits","volume":"361 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-08-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122791653","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-08-02DOI: 10.1109/CORNEL.1993.303077
B. L. Pitts, D. Emerson, M. Matragrano, K. L. Whittingham, B.P. Butterfield, J. Shealy
The flow modulation growth of high purity InP and GaAs based III-V compound semiconductors is demonstrated using a multichamber organometallic vapor phase epitaxy (OMVPE) apparatus. Flow modulation is performed by rotating substrates through spatially separated group III and group V rich zones without valve switching. This system has multiwafer capability and excellent compositional and thickness uniformity. In addition, using the appropriate flow conditions, phosphide and arsenide based superlattice structures can also be produced without the use of mechanical valve switching. High purity InP and GaAs have been realized, yielding low temperature (77 K) mobilities exceeding 110,000 and 115,000 cm/sup 2V s, respectively. Excellent transport and optical properties were also observed for GaInP-GaAs and GaInAs-InP structures. The multichamber reactor is a useful tool for both research and manufacturing of optoelectronic and high speed compound semiconductor devices.<>
{"title":"Flow modulation growth of III-V compound semiconductors using a multichamber OMVPE reactor","authors":"B. L. Pitts, D. Emerson, M. Matragrano, K. L. Whittingham, B.P. Butterfield, J. Shealy","doi":"10.1109/CORNEL.1993.303077","DOIUrl":"https://doi.org/10.1109/CORNEL.1993.303077","url":null,"abstract":"The flow modulation growth of high purity InP and GaAs based III-V compound semiconductors is demonstrated using a multichamber organometallic vapor phase epitaxy (OMVPE) apparatus. Flow modulation is performed by rotating substrates through spatially separated group III and group V rich zones without valve switching. This system has multiwafer capability and excellent compositional and thickness uniformity. In addition, using the appropriate flow conditions, phosphide and arsenide based superlattice structures can also be produced without the use of mechanical valve switching. High purity InP and GaAs have been realized, yielding low temperature (77 K) mobilities exceeding 110,000 and 115,000 cm/sup 2V s, respectively. Excellent transport and optical properties were also observed for GaInP-GaAs and GaInAs-InP structures. The multichamber reactor is a useful tool for both research and manufacturing of optoelectronic and high speed compound semiconductor devices.<<ETX>>","PeriodicalId":129440,"journal":{"name":"Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-08-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123395106","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-08-02DOI: 10.1109/CORNEL.1993.303090
M. Vai, Zhimin Xu, S. Prasad
A neural network approach is developed to qualitatively model the relationship between fabrication process parameters and the characteristics of a heterojunction bipolar transistor (HBT). An equivalent circuit model is used as an intermediate representation format for this objective. The goal of this research project is to develop a method that can predict and explain changes in the behavior of a device without the need for precise problem formulations and computationally intensive methods. The primary use of such a neural network model is in a reverse modeling process which performs device optimization.<>
{"title":"Qualitatively modeling heterojunction bipolar transistors for optimization: a neural network approach","authors":"M. Vai, Zhimin Xu, S. Prasad","doi":"10.1109/CORNEL.1993.303090","DOIUrl":"https://doi.org/10.1109/CORNEL.1993.303090","url":null,"abstract":"A neural network approach is developed to qualitatively model the relationship between fabrication process parameters and the characteristics of a heterojunction bipolar transistor (HBT). An equivalent circuit model is used as an intermediate representation format for this objective. The goal of this research project is to develop a method that can predict and explain changes in the behavior of a device without the need for precise problem formulations and computationally intensive methods. The primary use of such a neural network model is in a reverse modeling process which performs device optimization.<<ETX>>","PeriodicalId":129440,"journal":{"name":"Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-08-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115300258","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-08-02DOI: 10.1109/CORNEL.1993.303101
W. Peatman, H. Park, B. Gelmont, M. Shur, P. Maki, E. R. Brown, M. Rooks
We present here the research on new metal/2-dimensional electron gas (2-DEG) Schottky contacts. This new high speed contact has unique characteristics which are particularly promising for applications in the fields of millimeter wave electronics and high speed, low power integrated circuits. We describe here two new transistors which utilize a side-gate formed by plating gate metal into a trench etched through the plane of the 2-DEG. The first transistor is the Schottky-gated resonant tunneling transistor (SG-RTT) which has demonstrated high transconductance and novel switching properties at room temperature. The second device is a novel 2-dimensional metal-semiconductor field effect transistor (2-D MESFET) which is particularly promising for low power, high speed integrated circuit applications. We also briefly discuss several applications of these new transistors.<>
{"title":"Novel metal/2-DEG junction transistors","authors":"W. Peatman, H. Park, B. Gelmont, M. Shur, P. Maki, E. R. Brown, M. Rooks","doi":"10.1109/CORNEL.1993.303101","DOIUrl":"https://doi.org/10.1109/CORNEL.1993.303101","url":null,"abstract":"We present here the research on new metal/2-dimensional electron gas (2-DEG) Schottky contacts. This new high speed contact has unique characteristics which are particularly promising for applications in the fields of millimeter wave electronics and high speed, low power integrated circuits. We describe here two new transistors which utilize a side-gate formed by plating gate metal into a trench etched through the plane of the 2-DEG. The first transistor is the Schottky-gated resonant tunneling transistor (SG-RTT) which has demonstrated high transconductance and novel switching properties at room temperature. The second device is a novel 2-dimensional metal-semiconductor field effect transistor (2-D MESFET) which is particularly promising for low power, high speed integrated circuit applications. We also briefly discuss several applications of these new transistors.<<ETX>>","PeriodicalId":129440,"journal":{"name":"Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-08-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124509425","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-08-02DOI: 10.1109/CORNEL.1993.303083
A. Afzali-Kushaa, G. Haddad, T. Norris
The feasibility and potential of laser sources based on intersubband transitions in quantum wells and strained layers will be presented. The basic schemes and proposed structures for both electrically and optically pumped devices are discussed. Both conduction band and valence band quantum wells as well as strained layers may be used as the active layer of these lasers. These sources can be either optically or electrically pumped with each having its own advantages. Various material systems which are appropriate for these applications will be described.<>
{"title":"On the feasibility of intersubband transition lasers","authors":"A. Afzali-Kushaa, G. Haddad, T. Norris","doi":"10.1109/CORNEL.1993.303083","DOIUrl":"https://doi.org/10.1109/CORNEL.1993.303083","url":null,"abstract":"The feasibility and potential of laser sources based on intersubband transitions in quantum wells and strained layers will be presented. The basic schemes and proposed structures for both electrically and optically pumped devices are discussed. Both conduction band and valence band quantum wells as well as strained layers may be used as the active layer of these lasers. These sources can be either optically or electrically pumped with each having its own advantages. Various material systems which are appropriate for these applications will be described.<<ETX>>","PeriodicalId":129440,"journal":{"name":"Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits","volume":"54 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-08-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122571651","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-08-02DOI: 10.1109/CORNEL.1993.303072
B. Bayraktaroglu, R. Fitch, J. Barrette, R. Scherer, L. Kehias, C.I. Huang
Record power density performance of AlGaAs/GaAs microwave power heterojunction bipolar transistors (HBTs) was accomplished through the use of novel design and fabrication techniques. Thermally-stable operation of HBTs up to their electronic limitation (10 mWspl mu/m/sup 2/ output power density at 10 GHz with 0.6 W CW output power, 7.1 dB gain and 60% PAE) was attained. The design of the HBT was based on a detailed electro-thermal device analysis which revealed the necessity to provide an effective heat transfer path between heat sources in a multi-emitter power device. Excess heat was transferred out of the device using thermal shunt and thermal lens techniques. The thermal resistance of the device was lowered by a factor of 2.5-3 compared to conventional devices.<>
{"title":"Design and fabrication of thermally-stable AlGaAs/GaAs microwave power HBTs","authors":"B. Bayraktaroglu, R. Fitch, J. Barrette, R. Scherer, L. Kehias, C.I. Huang","doi":"10.1109/CORNEL.1993.303072","DOIUrl":"https://doi.org/10.1109/CORNEL.1993.303072","url":null,"abstract":"Record power density performance of AlGaAs/GaAs microwave power heterojunction bipolar transistors (HBTs) was accomplished through the use of novel design and fabrication techniques. Thermally-stable operation of HBTs up to their electronic limitation (10 mWspl mu/m/sup 2/ output power density at 10 GHz with 0.6 W CW output power, 7.1 dB gain and 60% PAE) was attained. The design of the HBT was based on a detailed electro-thermal device analysis which revealed the necessity to provide an effective heat transfer path between heat sources in a multi-emitter power device. Excess heat was transferred out of the device using thermal shunt and thermal lens techniques. The thermal resistance of the device was lowered by a factor of 2.5-3 compared to conventional devices.<<ETX>>","PeriodicalId":129440,"journal":{"name":"Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-08-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130101235","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-08-02DOI: 10.1109/CORNEL.1993.303128
N. Nguyen, J. Ibbetson, J. Yen, M. Hashemi, Utkarsh Mishra
Utilizing a combination of low-temperature-grown Al/sub 0.3/Ga/sub 0.7/As passivation, overlapping gate, MOCVD regrowth of the source/drain contacts, and isolation by boron ion implantation, we have fabricated a GaAs MESFET with a completely encapsulated channel. Electrical characterization of the device shows that the early catastrophic on-state breakdown is suppressed. In contrast to the usually observed characteristics in GaAs MESFET, the breakdown locus of the device also has a positive slope. These improvements should allow us to bias the device at a higher operating point, thereby increasing the obtainable maximum output power in the device.<>
{"title":"Encapsulated GaAs power MESFET","authors":"N. Nguyen, J. Ibbetson, J. Yen, M. Hashemi, Utkarsh Mishra","doi":"10.1109/CORNEL.1993.303128","DOIUrl":"https://doi.org/10.1109/CORNEL.1993.303128","url":null,"abstract":"Utilizing a combination of low-temperature-grown Al/sub 0.3/Ga/sub 0.7/As passivation, overlapping gate, MOCVD regrowth of the source/drain contacts, and isolation by boron ion implantation, we have fabricated a GaAs MESFET with a completely encapsulated channel. Electrical characterization of the device shows that the early catastrophic on-state breakdown is suppressed. In contrast to the usually observed characteristics in GaAs MESFET, the breakdown locus of the device also has a positive slope. These improvements should allow us to bias the device at a higher operating point, thereby increasing the obtainable maximum output power in the device.<<ETX>>","PeriodicalId":129440,"journal":{"name":"Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-08-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121182747","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-08-02DOI: 10.1109/CORNEL.1993.303065
J. Campbell, K.-H. Li, C. Tsai
While numerous luminescence effects have been reported for Si-based materials, with few exceptions the efficiencies have been extremely low. The observation of strong, room-temperature, visible emission from porous Si has renewed interest in and stimulated research on light emission from column IV materials. This paper reviews some of the accomplishments that may presage the development of Si-based light emitters.<>
{"title":"Luminescence from Si-based materials and devices","authors":"J. Campbell, K.-H. Li, C. Tsai","doi":"10.1109/CORNEL.1993.303065","DOIUrl":"https://doi.org/10.1109/CORNEL.1993.303065","url":null,"abstract":"While numerous luminescence effects have been reported for Si-based materials, with few exceptions the efficiencies have been extremely low. The observation of strong, room-temperature, visible emission from porous Si has renewed interest in and stimulated research on light emission from column IV materials. This paper reviews some of the accomplishments that may presage the development of Si-based light emitters.<<ETX>>","PeriodicalId":129440,"journal":{"name":"Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-08-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116321531","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-08-02DOI: 10.1109/CORNEL.1993.303082
A. A. Chowdhury, M. Rashed, C. Maziar
We report calculations of transition energies as a function of applied electric field for different combinations of GaP and AlP thicknesses. Most of the calculated red shifted transition energies fall within the orange/yellow region of the visible spectrum. These results may prove to be useful in designing Stark shift electrooptic devices operating in visible wavelengths.<>
{"title":"A proposed Stark shift electrooptic device operating in visible wavelengths","authors":"A. A. Chowdhury, M. Rashed, C. Maziar","doi":"10.1109/CORNEL.1993.303082","DOIUrl":"https://doi.org/10.1109/CORNEL.1993.303082","url":null,"abstract":"We report calculations of transition energies as a function of applied electric field for different combinations of GaP and AlP thicknesses. Most of the calculated red shifted transition energies fall within the orange/yellow region of the visible spectrum. These results may prove to be useful in designing Stark shift electrooptic devices operating in visible wavelengths.<<ETX>>","PeriodicalId":129440,"journal":{"name":"Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits","volume":"83 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-08-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126197612","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-08-02DOI: 10.1109/CORNEL.1993.303103
R. Ferro, R. Robson, W. Hooper, T. Hasenberg, L.D. Bailey, S. Newell
We have fabricated a novel type of interband resonant tunnel diode by MBE growth of a superlattice, each period of which consists of layers of GaSb, AlSb and InAs. The diode is designed to conduct in forward bias by resonant interband tunneling, so that the entire stack appears to be a short circuit. Reverse bias current is impeded by band gap blocking. The reverse breakdown voltage varies with the number of periods, with each period capable of blocking about 0.4 V. A four period diode conducts 5000 A/cm/sup 2/ at less than 0.3 V of forward bias.<>
{"title":"A novel GaSb/AlSb/InAs high efficiency rectifying diode","authors":"R. Ferro, R. Robson, W. Hooper, T. Hasenberg, L.D. Bailey, S. Newell","doi":"10.1109/CORNEL.1993.303103","DOIUrl":"https://doi.org/10.1109/CORNEL.1993.303103","url":null,"abstract":"We have fabricated a novel type of interband resonant tunnel diode by MBE growth of a superlattice, each period of which consists of layers of GaSb, AlSb and InAs. The diode is designed to conduct in forward bias by resonant interband tunneling, so that the entire stack appears to be a short circuit. Reverse bias current is impeded by band gap blocking. The reverse breakdown voltage varies with the number of periods, with each period capable of blocking about 0.4 V. A four period diode conducts 5000 A/cm/sup 2/ at less than 0.3 V of forward bias.<<ETX>>","PeriodicalId":129440,"journal":{"name":"Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-08-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126577609","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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