Pub Date : 1993-08-02DOI: 10.1109/CORNEL.1993.303115
E. Kohn, S. Strahle, D. Geiger, U. Erben
Modelling the high field drift region of HFET's as a drift capacitance between gate and drain in series with the gate capacitance allows one to estimate the extension of the drift region, which determines feedback and output conductance, thus relating the microwave power gain to the device structure. The technique is applied to various GaAs and InP based FET structures.<>
{"title":"High field drift domains in GaAs and InP based heterostructure field effect devices","authors":"E. Kohn, S. Strahle, D. Geiger, U. Erben","doi":"10.1109/CORNEL.1993.303115","DOIUrl":"https://doi.org/10.1109/CORNEL.1993.303115","url":null,"abstract":"Modelling the high field drift region of HFET's as a drift capacitance between gate and drain in series with the gate capacitance allows one to estimate the extension of the drift region, which determines feedback and output conductance, thus relating the microwave power gain to the device structure. The technique is applied to various GaAs and InP based FET structures.<<ETX>>","PeriodicalId":129440,"journal":{"name":"Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits","volume":"120 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-08-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116365824","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-08-02DOI: 10.1109/CORNEL.1993.303112
M. Leary, J. Ballantyne
The authors describe the design of two MSM waveguide photodetectors which share their layer structure with high electron mobility transistors. This design makes these detectors particularly suited to integration with HEMTs in OEIC's. Resistive loss at the electrode surface, radiation loss into the substrate, and scattering loss are all accounted for in the optimization for internal detection efficiency of these 50 GHz detectors.<>
{"title":"MSM waveguide photodetectors optimized for monolithic integration with HEMTs","authors":"M. Leary, J. Ballantyne","doi":"10.1109/CORNEL.1993.303112","DOIUrl":"https://doi.org/10.1109/CORNEL.1993.303112","url":null,"abstract":"The authors describe the design of two MSM waveguide photodetectors which share their layer structure with high electron mobility transistors. This design makes these detectors particularly suited to integration with HEMTs in OEIC's. Resistive loss at the electrode surface, radiation loss into the substrate, and scattering loss are all accounted for in the optimization for internal detection efficiency of these 50 GHz detectors.<<ETX>>","PeriodicalId":129440,"journal":{"name":"Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-08-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131652895","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-08-02DOI: 10.1109/CORNEL.1993.303100
S. Luryi
The author has discussed coherent base propagation effects that can be obtained in stepwise graded and linearly graded bandgap base structures of heterostructure bipolar transistors. These effects open up one or several bands of frequencies above f/sub T/, where the transistor is active. Physically, the active behavior of a coherent transistor results from the phaseshift between the collector current and voltage, acquired during the minority-carrier transit across the base.<>
{"title":"Ultrafast operation of heterostructure bipolar transistors resulting from coherent base transport of minority carriers","authors":"S. Luryi","doi":"10.1109/CORNEL.1993.303100","DOIUrl":"https://doi.org/10.1109/CORNEL.1993.303100","url":null,"abstract":"The author has discussed coherent base propagation effects that can be obtained in stepwise graded and linearly graded bandgap base structures of heterostructure bipolar transistors. These effects open up one or several bands of frequencies above f/sub T/, where the transistor is active. Physically, the active behavior of a coherent transistor results from the phaseshift between the collector current and voltage, acquired during the minority-carrier transit across the base.<<ETX>>","PeriodicalId":129440,"journal":{"name":"Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-08-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130336113","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-08-02DOI: 10.1109/CORNEL.1993.303106
H. Yoon, Y.C. Chen, L. Davis, H. Sun, K. Zhang, J. Singh, P. Bhattacharya
Strained quantum well lasers have demonstrated remarkably improved characteristics compared to unstrained quantum well lasers. For extracting the highest level of performance, the required strain may be large. An important factor in the use of strained quantum wells is the long-term stability of the pseudomorphic active region and the associated reliability of the device. The effect of strain on reliability is investigated, in particular, for In/sub x/Ga/sub 1-x/As/GaAs (x=0.2, 0.25, and 0.3) multiple quantum well lasers in 64 mW/facet constant output power tests at 85/spl deg/C for 40 hours. Laser characteristics such as the operating currents (I/sub op/), the threshold currents (I/sub th/), and the slope efficiencies (dL/dI) are measured during the test and serve as useful degradation parameters. The average changes in I/sub op/ are 15, 9.9, and 0.22%, and the average changes in I/sub th/ at 85/spl deg/C are 21, 8.7, and -1.2% for x=0.2, 0.25, and 0.3, respectively. The average changes in dL/dI at 85/spl deg/C are -19, -14, 1.5%, respectively. Defect migration into the pseudomorphic active region is verified to be the dominant mechanism of degradation observed in these lasers. Hence, to account for the strain-induced reliability improvement, it is necessary to study the propagation of defects in semiconductor heterostructures. A theoretical model is constructed based on the the linear theory of elasticity, and relevant experiments are conducted for its support. Strain energy considerations show that defect propagation across a strained layer is unfavorable. The nonradiative defect densities in the GaAs-Al/sub 0.4/Ga/sub 0.6/As quantum wells with and without the surrounding pseudomorphic In/sub 0.2/Ga/sub 0.8/As layers are compared by measuring the photoluminescence intensities after intentionally creating defects and enhancing their diffusion. The structures with pseudomorphic In/sub 0.2/Ga/sub 0.8/As layers consistently show much higher quantum well photoluminescence intensity by as much as 130 times, thereby confirming our model. These results clearly account for the observed reliability improvement in quantum well lasers with increased strain in the well.<>
{"title":"Reliability of strained quantum well lasers","authors":"H. Yoon, Y.C. Chen, L. Davis, H. Sun, K. Zhang, J. Singh, P. Bhattacharya","doi":"10.1109/CORNEL.1993.303106","DOIUrl":"https://doi.org/10.1109/CORNEL.1993.303106","url":null,"abstract":"Strained quantum well lasers have demonstrated remarkably improved characteristics compared to unstrained quantum well lasers. For extracting the highest level of performance, the required strain may be large. An important factor in the use of strained quantum wells is the long-term stability of the pseudomorphic active region and the associated reliability of the device. The effect of strain on reliability is investigated, in particular, for In/sub x/Ga/sub 1-x/As/GaAs (x=0.2, 0.25, and 0.3) multiple quantum well lasers in 64 mW/facet constant output power tests at 85/spl deg/C for 40 hours. Laser characteristics such as the operating currents (I/sub op/), the threshold currents (I/sub th/), and the slope efficiencies (dL/dI) are measured during the test and serve as useful degradation parameters. The average changes in I/sub op/ are 15, 9.9, and 0.22%, and the average changes in I/sub th/ at 85/spl deg/C are 21, 8.7, and -1.2% for x=0.2, 0.25, and 0.3, respectively. The average changes in dL/dI at 85/spl deg/C are -19, -14, 1.5%, respectively. Defect migration into the pseudomorphic active region is verified to be the dominant mechanism of degradation observed in these lasers. Hence, to account for the strain-induced reliability improvement, it is necessary to study the propagation of defects in semiconductor heterostructures. A theoretical model is constructed based on the the linear theory of elasticity, and relevant experiments are conducted for its support. Strain energy considerations show that defect propagation across a strained layer is unfavorable. The nonradiative defect densities in the GaAs-Al/sub 0.4/Ga/sub 0.6/As quantum wells with and without the surrounding pseudomorphic In/sub 0.2/Ga/sub 0.8/As layers are compared by measuring the photoluminescence intensities after intentionally creating defects and enhancing their diffusion. The structures with pseudomorphic In/sub 0.2/Ga/sub 0.8/As layers consistently show much higher quantum well photoluminescence intensity by as much as 130 times, thereby confirming our model. These results clearly account for the observed reliability improvement in quantum well lasers with increased strain in the well.<<ETX>>","PeriodicalId":129440,"journal":{"name":"Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits","volume":"57 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-08-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114575976","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-08-02DOI: 10.1109/CORNEL.1993.303119
R. Mills, G. Dunn, A. Walker, M. Daniels, P. Bishop, K. O. Jensen, B. Ridley, D. Herbert, J. Jefferson
An theoretical study has been made of electron transport over a wide AlGaAs barrier with graded interfaces between GaAs contact layers doped at 1/spl times/10/sup 18/ cm/sup -3/. Drift diffusion theory has been used giving excellent agreement with experimental current-voltage curves over the temperature range 100-200 K. We also present a fully self consistent 1-D Monte Carlo simulation in which the change in alloy composition in the graded interfaces is accounted for by position dependent scattering. We present a method used in the Monte Carlo simulation which allowed the modelling of the heavily doped contact regions even though the electron density could change by up to 8 orders of magnitude in the device.<>
{"title":"Monte Carlo simulation of wide AlGaAs barriers","authors":"R. Mills, G. Dunn, A. Walker, M. Daniels, P. Bishop, K. O. Jensen, B. Ridley, D. Herbert, J. Jefferson","doi":"10.1109/CORNEL.1993.303119","DOIUrl":"https://doi.org/10.1109/CORNEL.1993.303119","url":null,"abstract":"An theoretical study has been made of electron transport over a wide AlGaAs barrier with graded interfaces between GaAs contact layers doped at 1/spl times/10/sup 18/ cm/sup -3/. Drift diffusion theory has been used giving excellent agreement with experimental current-voltage curves over the temperature range 100-200 K. We also present a fully self consistent 1-D Monte Carlo simulation in which the change in alloy composition in the graded interfaces is accounted for by position dependent scattering. We present a method used in the Monte Carlo simulation which allowed the modelling of the heavily doped contact regions even though the electron density could change by up to 8 orders of magnitude in the device.<<ETX>>","PeriodicalId":129440,"journal":{"name":"Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits","volume":"250 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-08-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114831056","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-08-02DOI: 10.1109/CORNEL.1993.303120
L. Liou, B. Bayraktaroglu, C.I. Huang
Thermal runaway study of multiple emitter AlGaAs/GaAs power HBTs using an analytical electro-thermal model is described. Thermal runaway causes the fatal destruction of the device under the voltage modulation mode of operation, and thermally-induced current instability of the device under the current modulation mode of operation. The kinetic relation between the thermal runaway and junction temperature rise is studied. The HBT power handling capabilities in relation to the device thermal resistance and ballasting schemes are discussed.<>
{"title":"Thermal runaway analysis of high power AlGaAs/GaAs heterojunction bipolar transistors","authors":"L. Liou, B. Bayraktaroglu, C.I. Huang","doi":"10.1109/CORNEL.1993.303120","DOIUrl":"https://doi.org/10.1109/CORNEL.1993.303120","url":null,"abstract":"Thermal runaway study of multiple emitter AlGaAs/GaAs power HBTs using an analytical electro-thermal model is described. Thermal runaway causes the fatal destruction of the device under the voltage modulation mode of operation, and thermally-induced current instability of the device under the current modulation mode of operation. The kinetic relation between the thermal runaway and junction temperature rise is studied. The HBT power handling capabilities in relation to the device thermal resistance and ballasting schemes are discussed.<<ETX>>","PeriodicalId":129440,"journal":{"name":"Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits","volume":"101 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-08-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124806055","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-08-02DOI: 10.1109/CORNEL.1993.303117
J. Sánchez-Rojas, E. Muñoz
Band structure calculations, charge distribution and charge control properties in InGaAs-based pseudomorphic modulation doped [111]-FET's are presented. Compressive strain in AlGaAs-InGaAs-GaAs structures, and both tensile and compressive strains in AlInAs-InGaAs-InP devices are used to generate internal electric fields via the piezoelectric effect. Normal and inverted HEMT's with maximum. Charge in the well and minimized parallel conduction have been designed using this piezoelectric internal field. Improvements in charge concentration (up to 50% more) and its distribution in the well (almost centered) are achieved in this new orientation. Transconductance and gate capacitance versus gate voltage are compared for the [100] and [111] orientations. We conclude that the device performance is improved when the [111] substrate is used.<>
{"title":"Self-consistent calculations of [111]-oriented GaAs and InP based pseudomorphic HEMT's","authors":"J. Sánchez-Rojas, E. Muñoz","doi":"10.1109/CORNEL.1993.303117","DOIUrl":"https://doi.org/10.1109/CORNEL.1993.303117","url":null,"abstract":"Band structure calculations, charge distribution and charge control properties in InGaAs-based pseudomorphic modulation doped [111]-FET's are presented. Compressive strain in AlGaAs-InGaAs-GaAs structures, and both tensile and compressive strains in AlInAs-InGaAs-InP devices are used to generate internal electric fields via the piezoelectric effect. Normal and inverted HEMT's with maximum. Charge in the well and minimized parallel conduction have been designed using this piezoelectric internal field. Improvements in charge concentration (up to 50% more) and its distribution in the well (almost centered) are achieved in this new orientation. Transconductance and gate capacitance versus gate voltage are compared for the [100] and [111] orientations. We conclude that the device performance is improved when the [111] substrate is used.<<ETX>>","PeriodicalId":129440,"journal":{"name":"Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits","volume":"63 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-08-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121448930","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-08-02DOI: 10.1109/CORNEL.1993.303129
J. Shealy, M. Hashemi, S. Denbaars, U. Mishra, T.K. Liu, J.J. Brown, M. Lui
We present a technology to increase both the two-terminal gate-drain breakdown and subsequently the three-terminal-off-state breakdown of AlInAs/GaInAs HEMTs to record values without substantial impact on other parameters such as Idss and g/sub m/. The breakdown in these structures is dependent on the injection of electrons from the source (channel current) and the gate (gate leakage) into the channel where multiplication occurs (due to high electric fields at the drain), producing holes which are swept back into the gate and source electrodes. These phenomena can be suppressed by increasing the gate barrier height and alleviating the fields at the drain. In our approach we have achieved both by incorporating a p+-2DEG junction as the gate which modulates the 2DEG gas and by utilizing selective regrowth of the source and drain regions by MOCVD. The 1 /spl mu/m gate length devices fabricated show a full channel current of 350 mA/mm, transconductance of 240 mS/mm and record high two-terminal gate-drain and three-terminal-off-state breakdown voltages of 31 V and 28 V, respectively. The gate-to-drain spacing is 1/spl mu/m and the breakdown is defined at 1mA/mm gate leakage. Further, temperature measurements were made to characterize both two-terminal and three-terminal-on-state breakdown. The gate current behavior is presented along with a calculated ionization rate which is compared with rates previously reported.<>
{"title":"Breakdown characterization of AlInAs/GaInAs junction modulated HEMTs (JHEMTs) with regrown ohmic contacts by MOCVD","authors":"J. Shealy, M. Hashemi, S. Denbaars, U. Mishra, T.K. Liu, J.J. Brown, M. Lui","doi":"10.1109/CORNEL.1993.303129","DOIUrl":"https://doi.org/10.1109/CORNEL.1993.303129","url":null,"abstract":"We present a technology to increase both the two-terminal gate-drain breakdown and subsequently the three-terminal-off-state breakdown of AlInAs/GaInAs HEMTs to record values without substantial impact on other parameters such as Idss and g/sub m/. The breakdown in these structures is dependent on the injection of electrons from the source (channel current) and the gate (gate leakage) into the channel where multiplication occurs (due to high electric fields at the drain), producing holes which are swept back into the gate and source electrodes. These phenomena can be suppressed by increasing the gate barrier height and alleviating the fields at the drain. In our approach we have achieved both by incorporating a p+-2DEG junction as the gate which modulates the 2DEG gas and by utilizing selective regrowth of the source and drain regions by MOCVD. The 1 /spl mu/m gate length devices fabricated show a full channel current of 350 mA/mm, transconductance of 240 mS/mm and record high two-terminal gate-drain and three-terminal-off-state breakdown voltages of 31 V and 28 V, respectively. The gate-to-drain spacing is 1/spl mu/m and the breakdown is defined at 1mA/mm gate leakage. Further, temperature measurements were made to characterize both two-terminal and three-terminal-on-state breakdown. The gate current behavior is presented along with a calculated ionization rate which is compared with rates previously reported.<<ETX>>","PeriodicalId":129440,"journal":{"name":"Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-08-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123837006","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-08-02DOI: 10.1109/CORNEL.1993.303104
R. Kamoua, H. Eisele, George I. Haddad, G. Munns, M. Sherwin
The potential of InP Gunn devices as power sources in the fundamental mode at D-band frequencies (110 GHz-170 GHz) is investigated. A self-consistent ensemble Monte Carte model has been developed to design and identify suitable structures for operation in this frequency range. Using this model with typical InP material parameters found in the literature, it is shown to give results inconsistent with experiment. Based on experimental results from a 1.7 /spl mu/m long Gunn structure, more realistic material parameters were estimated. The resulting model is then used to design various structures with active regions in the 1 /spl mu/m range. In particular, two structures, one with a flat doping profile and the other with a linearly graded doping profile, were fabricated and tested. State-of-the-art performance from these structures operating in the fundamental mode was obtained at frequencies ranging from 108.3 GHz to 155 GHz. The flat structure yielded optimum results at 108.3 GHz with a power level of 33 mW while the graded structure gave 20 mW at 120 GHz, 17 mW at 133 GHz, 10 mW at 136 GHz, and 8 mW at 155 GHz. These results are compared with the model predictions.<>
{"title":"Development of an appropriate model for the design of D-band InP Gunn devices","authors":"R. Kamoua, H. Eisele, George I. Haddad, G. Munns, M. Sherwin","doi":"10.1109/CORNEL.1993.303104","DOIUrl":"https://doi.org/10.1109/CORNEL.1993.303104","url":null,"abstract":"The potential of InP Gunn devices as power sources in the fundamental mode at D-band frequencies (110 GHz-170 GHz) is investigated. A self-consistent ensemble Monte Carte model has been developed to design and identify suitable structures for operation in this frequency range. Using this model with typical InP material parameters found in the literature, it is shown to give results inconsistent with experiment. Based on experimental results from a 1.7 /spl mu/m long Gunn structure, more realistic material parameters were estimated. The resulting model is then used to design various structures with active regions in the 1 /spl mu/m range. In particular, two structures, one with a flat doping profile and the other with a linearly graded doping profile, were fabricated and tested. State-of-the-art performance from these structures operating in the fundamental mode was obtained at frequencies ranging from 108.3 GHz to 155 GHz. The flat structure yielded optimum results at 108.3 GHz with a power level of 33 mW while the graded structure gave 20 mW at 120 GHz, 17 mW at 133 GHz, 10 mW at 136 GHz, and 8 mW at 155 GHz. These results are compared with the model predictions.<<ETX>>","PeriodicalId":129440,"journal":{"name":"Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-08-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114577618","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-08-02DOI: 10.1109/CORNEL.1993.303126
M. Matloubian, L. Larson, A. Brown, L. Jelloian, L. Nguyen, M. Lui, T. Liu, J. Brown, M. Thompson, W. Lam, A. Kurdoghlian, R. Rhodes, M. Delaney, J. Pence
The authors have conducted a systematic effort to improve the breakdown voltage of InP-based HEMTs without compromising their high frequency performance, and have demonstrated millimeter wave circuit results that are comparable to or exceed those of the best GaAs-based PHEMTs in the critical area of power-added efficiency and output power. This improvement was accomplished by a combination of developments in material growth and device design and fabrication.<>
{"title":"InP-based HEMTs for the realization of ultra-high efficiency millimeter wave power amplifiers","authors":"M. Matloubian, L. Larson, A. Brown, L. Jelloian, L. Nguyen, M. Lui, T. Liu, J. Brown, M. Thompson, W. Lam, A. Kurdoghlian, R. Rhodes, M. Delaney, J. Pence","doi":"10.1109/CORNEL.1993.303126","DOIUrl":"https://doi.org/10.1109/CORNEL.1993.303126","url":null,"abstract":"The authors have conducted a systematic effort to improve the breakdown voltage of InP-based HEMTs without compromising their high frequency performance, and have demonstrated millimeter wave circuit results that are comparable to or exceed those of the best GaAs-based PHEMTs in the critical area of power-added efficiency and output power. This improvement was accomplished by a combination of developments in material growth and device design and fabrication.<<ETX>>","PeriodicalId":129440,"journal":{"name":"Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-08-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125905773","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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