Pub Date : 2002-12-11DOI: 10.1109/COMMAD.2002.1237290
T. Xiaohong, C. Jim, Zhang Baolin, Zhu Jinyi, Huang Gensheng
A large blue shift in the peak position of the photoluminescence excitation (PLE) spectra of n-i-p-i MQW structures have been observed when the excitation power intensity is varied from /spl sim/ 1 mW/cm/sup 2/ to /spl sim/10 W/cm/sup 2/. With multiple step-quantum wells (MS-QWs), the blue shift is found to be much larger than that of the n-i-p-i MQWs structure with normal rectangular quantum wells. The blue shift is found to be dependent on the excitation intensity I/sup ex/ in the form /spl Delta/h/spl nu//sub max/ - /spl Delta/h/spl nu//sub max/ / 1 + (I/sup ex//I/sup a/)/sup s/.
{"title":"Optical induced blueshift of PLE spectrum improvement in n-i-p-i multiple quantum well structures","authors":"T. Xiaohong, C. Jim, Zhang Baolin, Zhu Jinyi, Huang Gensheng","doi":"10.1109/COMMAD.2002.1237290","DOIUrl":"https://doi.org/10.1109/COMMAD.2002.1237290","url":null,"abstract":"A large blue shift in the peak position of the photoluminescence excitation (PLE) spectra of n-i-p-i MQW structures have been observed when the excitation power intensity is varied from /spl sim/ 1 mW/cm/sup 2/ to /spl sim/10 W/cm/sup 2/. With multiple step-quantum wells (MS-QWs), the blue shift is found to be much larger than that of the n-i-p-i MQWs structure with normal rectangular quantum wells. The blue shift is found to be dependent on the excitation intensity I/sup ex/ in the form /spl Delta/h/spl nu//sub max/ - /spl Delta/h/spl nu//sub max/ / 1 + (I/sup ex//I/sup a/)/sup s/.","PeriodicalId":129668,"journal":{"name":"2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128133746","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-12-11DOI: 10.1109/COMMAD.2002.1237180
M. Buda, H. Tan, L. Fu, L. Josyula, C. Jagadish
This paper demonstrates the improvement of kink-free operation in InGaAs/GaAs/AlGaAs high power, ridge waveguide laser diodes. Results show that when the thickness of the insulator layer is reduced below 200 nm and Ti/Pt/Au is used as the p-type metallization, significant absorption outside the ridge occurs as a result of the penetration of the vertical optical field into the absorptive metal layers. This effect can be used to introduce selective loss for the first order lateral mode. Hence, this study has shown that the kink-free operation can be improved by 30 to 50% in 980 nm emitting laser diodes when the thickness of the SiO/sub 2/ insulator is reduced to 50 to 75 nm.
{"title":"Improvement of kink-free operation in InGaAs/GaAs/AlGaAs high power, ridge waveguide laser diodes","authors":"M. Buda, H. Tan, L. Fu, L. Josyula, C. Jagadish","doi":"10.1109/COMMAD.2002.1237180","DOIUrl":"https://doi.org/10.1109/COMMAD.2002.1237180","url":null,"abstract":"This paper demonstrates the improvement of kink-free operation in InGaAs/GaAs/AlGaAs high power, ridge waveguide laser diodes. Results show that when the thickness of the insulator layer is reduced below 200 nm and Ti/Pt/Au is used as the p-type metallization, significant absorption outside the ridge occurs as a result of the penetration of the vertical optical field into the absorptive metal layers. This effect can be used to introduce selective loss for the first order lateral mode. Hence, this study has shown that the kink-free operation can be improved by 30 to 50% in 980 nm emitting laser diodes when the thickness of the SiO/sub 2/ insulator is reduced to 50 to 75 nm.","PeriodicalId":129668,"journal":{"name":"2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)","volume":"9 3","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121005936","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-12-11DOI: 10.1109/COMMAD.2002.1237268
K. Prasad, X. Yuan, C. Li, R. Kumar
In this paper, we compare the experimental results on the suitability of oxygen or nitrogen containing SiC (SiCO or SiCN) with conventional SiN as a capping layer to prevent Cu diffusion into interlevel dielectric (ILD) layer in a typical Cu based interconnect structure. In addition to reducing the dielectric constant (k) value of the barrier, SiCN and SiCO show comparable performance in terms of preventing the Cu diffusion as well as offering good dielectric breakdown strength.
{"title":"Evaluation of diffusion barrier layers in Cu interconnects","authors":"K. Prasad, X. Yuan, C. Li, R. Kumar","doi":"10.1109/COMMAD.2002.1237268","DOIUrl":"https://doi.org/10.1109/COMMAD.2002.1237268","url":null,"abstract":"In this paper, we compare the experimental results on the suitability of oxygen or nitrogen containing SiC (SiCO or SiCN) with conventional SiN as a capping layer to prevent Cu diffusion into interlevel dielectric (ILD) layer in a typical Cu based interconnect structure. In addition to reducing the dielectric constant (k) value of the barrier, SiCN and SiCO show comparable performance in terms of preventing the Cu diffusion as well as offering good dielectric breakdown strength.","PeriodicalId":129668,"journal":{"name":"2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123016859","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-12-11DOI: 10.1109/COMMAD.2002.1237236
D. Shim, Hae-Seok Park, K. Na, Wonseo Choi, Jun-sik Hwang, Sang-on Choi
This paper describes a MEMS-based micro-fluxgate magnetic sensor composed of solenoid driving coil, sensing coil and rectangular-ring shaped magnetic core. Solenoid coils and magnetic core were separated by benzocyclobutene (BCB) having high resistivity and good planarization characteristics. To take advantage of low cost, small size and low power consumption, MEMS technology was used to fabricate micro fluxgate sensor. Copper coil with 20 /spl mu/m width and 3.5/spl mu/m thickness was electroplated on Cr (300/spl Aring/)/Au (1500/spl Aring/) films for driving and sensing coils. We designed the magnetic core into a rectangular-ring shape to reduce the magnetic flux leakage. Permalloy (NiO/sub 0.8/Fe/sub 0.2/) film with the thickness of 2 /spl mu/m was electroplated under 2000 gauss to induce magnetic anisotropy. The magnetic core had the high DC effective permeability of /spl sim/1,100 and coercivity of /spl sim/0.1 Oe. The fabricated fluxgate sensor had the sensitivity of /spl sim/650 V/T and power consumption of 40 mW at the driving frequency of 2 MHz and the driving voltage of 5 Vp-p.
{"title":"Micro fluxgate sensor using solenoid driving and sensing coils","authors":"D. Shim, Hae-Seok Park, K. Na, Wonseo Choi, Jun-sik Hwang, Sang-on Choi","doi":"10.1109/COMMAD.2002.1237236","DOIUrl":"https://doi.org/10.1109/COMMAD.2002.1237236","url":null,"abstract":"This paper describes a MEMS-based micro-fluxgate magnetic sensor composed of solenoid driving coil, sensing coil and rectangular-ring shaped magnetic core. Solenoid coils and magnetic core were separated by benzocyclobutene (BCB) having high resistivity and good planarization characteristics. To take advantage of low cost, small size and low power consumption, MEMS technology was used to fabricate micro fluxgate sensor. Copper coil with 20 /spl mu/m width and 3.5/spl mu/m thickness was electroplated on Cr (300/spl Aring/)/Au (1500/spl Aring/) films for driving and sensing coils. We designed the magnetic core into a rectangular-ring shape to reduce the magnetic flux leakage. Permalloy (NiO/sub 0.8/Fe/sub 0.2/) film with the thickness of 2 /spl mu/m was electroplated under 2000 gauss to induce magnetic anisotropy. The magnetic core had the high DC effective permeability of /spl sim/1,100 and coercivity of /spl sim/0.1 Oe. The fabricated fluxgate sensor had the sensitivity of /spl sim/650 V/T and power consumption of 40 mW at the driving frequency of 2 MHz and the driving voltage of 5 Vp-p.","PeriodicalId":129668,"journal":{"name":"2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)","volume":"204 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114151276","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-12-11DOI: 10.1109/COMMAD.2002.1237248
L. Van Dao, M. Lowe, P. Hannaford
Using femtosecond three-pulse two-colour photon echo measurements we study the optical nonlinearity induced by pump and probe in the short time scale (< 500 fs) where the free induction decay and photon echo are the main contribution to observed signal and in a long time scale (up to 20 ps) in the trace of the population grating. The variation of the pump and probe wavelength and use of spectrally resolved measurements allows us to study the origin of the yellow band and the phase and energy relaxation properties of this band. The results suggest that the light emission in the yellow band is the recombination between shallow donors and deep acceptors and the carriers trapping time is very short.
{"title":"Femtosecond three-pulse photon echo and transient grating studies of the yellow band of GaN","authors":"L. Van Dao, M. Lowe, P. Hannaford","doi":"10.1109/COMMAD.2002.1237248","DOIUrl":"https://doi.org/10.1109/COMMAD.2002.1237248","url":null,"abstract":"Using femtosecond three-pulse two-colour photon echo measurements we study the optical nonlinearity induced by pump and probe in the short time scale (< 500 fs) where the free induction decay and photon echo are the main contribution to observed signal and in a long time scale (up to 20 ps) in the trace of the population grating. The variation of the pump and probe wavelength and use of spectrally resolved measurements allows us to study the origin of the yellow band and the phase and energy relaxation properties of this band. The results suggest that the light emission in the yellow band is the recombination between shallow donors and deep acceptors and the carriers trapping time is very short.","PeriodicalId":129668,"journal":{"name":"2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128082089","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-12-11DOI: 10.1109/COMMAD.2002.1237251
L. C. Castro, D. L. John, D. Pulfrey
Issues pertinent to the development of a compact model for predicting the drain current-voltage characteristics of coaxial-geometry, Schottky-barrier, carbon-nanotube field-effect transistors are discussed. Information on the non-equilibrium barrier shapes at the source-tube and drain-tube contacts is inferred from exact 2-D solutions to Poisson's equation at equilibrium and Laplace's equation. This information is then used in a non-equilibrium flux approach to create a model that accounts for tunneling through both barriers and computes the drain current in the case of ballistic transport. For (16,0) tubes and a gate/tube-radius ratio of 10, saturation drain currents of about 1 /spl mu/m are predicted.
{"title":"Towards a compact model for Schottky-barrier nanotube FETs","authors":"L. C. Castro, D. L. John, D. Pulfrey","doi":"10.1109/COMMAD.2002.1237251","DOIUrl":"https://doi.org/10.1109/COMMAD.2002.1237251","url":null,"abstract":"Issues pertinent to the development of a compact model for predicting the drain current-voltage characteristics of coaxial-geometry, Schottky-barrier, carbon-nanotube field-effect transistors are discussed. Information on the non-equilibrium barrier shapes at the source-tube and drain-tube contacts is inferred from exact 2-D solutions to Poisson's equation at equilibrium and Laplace's equation. This information is then used in a non-equilibrium flux approach to create a model that accounts for tunneling through both barriers and computes the drain current in the case of ballistic transport. For (16,0) tubes and a gate/tube-radius ratio of 10, saturation drain currents of about 1 /spl mu/m are predicted.","PeriodicalId":129668,"journal":{"name":"2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)","volume":"80 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116645679","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-12-11DOI: 10.1109/COMMAD.2002.1237214
A. H. Ramelan, K. Butcher, E. Goldys
The extent of oxidation and growth derived oxygen contamination for Al/sub 0.05/Ga/sub 0.95/Sb grown by metalorganic chemical vapour deposition (MOCVD) were systematically investigated by X-ray photoelectron spectroscopy (XPS) using a system with high-energy resolution. The Sb3d/sub 5/2/ and O1s peaks are well resolved and the Ga3d peaks are also well resolved. As expected, all samples investigated show oxide layers (Al/sub 2/O/sub 3/, Sb/sub 2/O/sub 2/ and Ga/sub 2/O/sub 5/) on their surfaces. In particular the percentage of aluminium-oxide was very high compared with a small percentage of AlSb. This indicates that the surface aluminium is very reactive to oxygen from the environment. Carbon content on the surface was also very high. Deeper into the layer, the carbon signal was below the detection limit of XPS and secondary ion mass spectroscopy (SIMS) indicating that the carbon was due to atmospheric exposure. The results indicate extremely low carbon content for Al/sub 0.05/Ga/sub 0.95/Sb epilayers grown using TMAl, TMGa and TMSb as metalorganic precursors in an MOCVD system.
{"title":"X-ray photoelectron spectroscopy of Al/sub x/Ga/sub 1-x/Sb grown by metalorganic chemical vapour deposition","authors":"A. H. Ramelan, K. Butcher, E. Goldys","doi":"10.1109/COMMAD.2002.1237214","DOIUrl":"https://doi.org/10.1109/COMMAD.2002.1237214","url":null,"abstract":"The extent of oxidation and growth derived oxygen contamination for Al/sub 0.05/Ga/sub 0.95/Sb grown by metalorganic chemical vapour deposition (MOCVD) were systematically investigated by X-ray photoelectron spectroscopy (XPS) using a system with high-energy resolution. The Sb3d/sub 5/2/ and O1s peaks are well resolved and the Ga3d peaks are also well resolved. As expected, all samples investigated show oxide layers (Al/sub 2/O/sub 3/, Sb/sub 2/O/sub 2/ and Ga/sub 2/O/sub 5/) on their surfaces. In particular the percentage of aluminium-oxide was very high compared with a small percentage of AlSb. This indicates that the surface aluminium is very reactive to oxygen from the environment. Carbon content on the surface was also very high. Deeper into the layer, the carbon signal was below the detection limit of XPS and secondary ion mass spectroscopy (SIMS) indicating that the carbon was due to atmospheric exposure. The results indicate extremely low carbon content for Al/sub 0.05/Ga/sub 0.95/Sb epilayers grown using TMAl, TMGa and TMSb as metalorganic precursors in an MOCVD system.","PeriodicalId":129668,"journal":{"name":"2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127233236","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-12-11DOI: 10.1109/COMMAD.2002.1237233
A. Trinchi, K. Galatsis, Y.X. Li, W. Wlodarski, S. Russo, J. du Plesis, B. Rout
Gallium-Zinc mixed metal oxides have been fabricated by the sol-gel process and tested towards oxygen gas. These films were deposited on alumina transducers with interdigital electrodes for gas sensing measurements and on single crystal silicon substrates for microcharacterization. X-ray Photoelectron Spectroscopy (XPS) and Rutherford Backscattering Spectrometry (RBS) showed that the actual concentrations in Ga-Zn oxide thin films differ from the nominal values in the prepared solutions as a function of annealing temperature. Furthermore, the concentration of Zn decreases with a rise of sample annealing temperature. It was found that by increasing the amount of Zn in the sensor film, the operating temperature decreased as well as the base resistance.
{"title":"Properties of Ga-Zn based mixed oxides for gas sensing applications","authors":"A. Trinchi, K. Galatsis, Y.X. Li, W. Wlodarski, S. Russo, J. du Plesis, B. Rout","doi":"10.1109/COMMAD.2002.1237233","DOIUrl":"https://doi.org/10.1109/COMMAD.2002.1237233","url":null,"abstract":"Gallium-Zinc mixed metal oxides have been fabricated by the sol-gel process and tested towards oxygen gas. These films were deposited on alumina transducers with interdigital electrodes for gas sensing measurements and on single crystal silicon substrates for microcharacterization. X-ray Photoelectron Spectroscopy (XPS) and Rutherford Backscattering Spectrometry (RBS) showed that the actual concentrations in Ga-Zn oxide thin films differ from the nominal values in the prepared solutions as a function of annealing temperature. Furthermore, the concentration of Zn decreases with a rise of sample annealing temperature. It was found that by increasing the amount of Zn in the sensor film, the operating temperature decreased as well as the base resistance.","PeriodicalId":129668,"journal":{"name":"2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126771177","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-12-11DOI: 10.1109/COMMAD.2002.1237269
S. Dasgupta, D. Jain
A numerical solution of two-dimensional Poisson's equation and Schrodinger wave equation of a deep sub-micron and nano-meter MOSFET has been obtained to gather information about the charge and the potential distribution in the depletion region. The quantum as well as classical charge has been computed. The quantum charge is a direct function of Density of States (DOS). The classical charge can be found out by simply solving the two-dimensional Poisson equation under specific boundary conditions governed by the physics of the device. The channel voltage profile has also been presented. It is seen that the classical model underestimates the channel voltage and the longitudinal electric field in the channel as compared to that obtained through Quantum Mechanical (QM) approach.
{"title":"Self-consistent solution of 2D-Poisson and Schrodinger wave equation for nano-metric MOSFET modeling for VLSI/ULSI purposes","authors":"S. Dasgupta, D. Jain","doi":"10.1109/COMMAD.2002.1237269","DOIUrl":"https://doi.org/10.1109/COMMAD.2002.1237269","url":null,"abstract":"A numerical solution of two-dimensional Poisson's equation and Schrodinger wave equation of a deep sub-micron and nano-meter MOSFET has been obtained to gather information about the charge and the potential distribution in the depletion region. The quantum as well as classical charge has been computed. The quantum charge is a direct function of Density of States (DOS). The classical charge can be found out by simply solving the two-dimensional Poisson equation under specific boundary conditions governed by the physics of the device. The channel voltage profile has also been presented. It is seen that the classical model underestimates the channel voltage and the longitudinal electric field in the channel as compared to that obtained through Quantum Mechanical (QM) approach.","PeriodicalId":129668,"journal":{"name":"2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131202407","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-12-11DOI: 10.1109/COMMAD.2002.1237272
M. Tsai, Y. Wu, S. Tan, M. Chu, W.T. Chen, Y. Yang, W. Lour
This paper reported a new composite-emitter heterojunction bipolar transistor (CEHBT) with a composite emitter formed of a 0.04 /spl mu/m In/sub 0.5/Ga/sub 0.5/P bulk layer and a 0.06 /spl mu/m Al/sub 0.45/Ga/sub 0.55/As/GaAs digital graded superlattice (DGSL) layer. The CEHBT's exhibit a small collector-emitter offset voltage of 55 mV and a base-emitter turn-on voltage of 0.87 V, which is 0.4 V lower than that of 1.27 V of the InGaP/AlGaAs abrupt-emitter HBT. It is found that CEHBTs exhibits a current gain as high as 250 and is even enhanced to 385 when only a DGSL layer is used for passivation layer.
本文报道了一种新型复合发射极异质结双极晶体管(CEHBT)，其复合发射极由0.04 /spl μ m In/sub 0.5/Ga/sub 0.5/P本体层和0.06 /spl μ l Al/sub 0.45/Ga/sub 0.55/As/GaAs数字渐变超晶格(DGSL)层构成。CEHBT的集电极-发射极偏置电压为55 mV，基极-发射极导通电压为0.87 V，比InGaP/AlGaAs突发发射极HBT的1.27 V低0.4 V。研究发现，仅使用DGSL层作为钝化层时，CEHBTs的电流增益高达250，甚至可以提高到385。
{"title":"A new InGap/AlGaAs/GaAs composite-emitter heterojunction bipolar transistors","authors":"M. Tsai, Y. Wu, S. Tan, M. Chu, W.T. Chen, Y. Yang, W. Lour","doi":"10.1109/COMMAD.2002.1237272","DOIUrl":"https://doi.org/10.1109/COMMAD.2002.1237272","url":null,"abstract":"This paper reported a new composite-emitter heterojunction bipolar transistor (CEHBT) with a composite emitter formed of a 0.04 /spl mu/m In/sub 0.5/Ga/sub 0.5/P bulk layer and a 0.06 /spl mu/m Al/sub 0.45/Ga/sub 0.55/As/GaAs digital graded superlattice (DGSL) layer. The CEHBT's exhibit a small collector-emitter offset voltage of 55 mV and a base-emitter turn-on voltage of 0.87 V, which is 0.4 V lower than that of 1.27 V of the InGaP/AlGaAs abrupt-emitter HBT. It is found that CEHBTs exhibits a current gain as high as 250 and is even enhanced to 385 when only a DGSL layer is used for passivation layer.","PeriodicalId":129668,"journal":{"name":"2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)","volume":"37 4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131353660","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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