Pub Date : 2002-12-11DOI: 10.1109/COMMAD.2002.1237201
S. Xu, H. Wang, S. Cheung, Q. Li, X. Dai, M. Xie, S. Tong
Wurtzite GaN epilayers directly grown on 4H-SiC (0001) misoriented by 0, 3.5, 5, 8, and 21/spl deg/ with plasma-assisted molecule beam epitaxy have been studied using variable-temperature photoluminescence. A strong emission peak locating at energy position -70 meV lower than the near band-edge emission peak at 3.47 eV is found in the emission spectra of the GaN films on 4H-SiC misoriented by 8 and 21/spl deg/. It is clear that one type of structural defect leads to the peak. Stacking mismatch boundaries are supposed to be the candidate causing the optical transition. Combined with the low-temperature photoluminescence excitation spectra of the films, the location of the electronic level induced by the structural defect is determined to be about 104 meV above the valence-band maximum of GaN.
{"title":"Emission from defects in thin gan epilayers grown on vicinal 4H-SiC substrates","authors":"S. Xu, H. Wang, S. Cheung, Q. Li, X. Dai, M. Xie, S. Tong","doi":"10.1109/COMMAD.2002.1237201","DOIUrl":"https://doi.org/10.1109/COMMAD.2002.1237201","url":null,"abstract":"Wurtzite GaN epilayers directly grown on 4H-SiC (0001) misoriented by 0, 3.5, 5, 8, and 21/spl deg/ with plasma-assisted molecule beam epitaxy have been studied using variable-temperature photoluminescence. A strong emission peak locating at energy position -70 meV lower than the near band-edge emission peak at 3.47 eV is found in the emission spectra of the GaN films on 4H-SiC misoriented by 8 and 21/spl deg/. It is clear that one type of structural defect leads to the peak. Stacking mismatch boundaries are supposed to be the candidate causing the optical transition. Combined with the low-temperature photoluminescence excitation spectra of the films, the location of the electronic level induced by the structural defect is determined to be about 104 meV above the valence-band maximum of GaN.","PeriodicalId":129668,"journal":{"name":"2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)","volume":"96 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130970824","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-12-11DOI: 10.1109/COMMAD.2002.1237193
T. To, A. Djurišić, M. Xie, W. Fong, C. Surya
In this work, we report a study of GaN doping by Mg diffusion. GaN films were grown on sapphire or SiC substrates by MBE. The samples were characterized by Hall measurements and photoluminescence before and after the diffusion. The diffusion was performed in the following manner: Mg layer was deposited on the sample by thermal evaporation, followed by the deposition of a capping layer (metallic or SiO/sub 2/). Samples were subsequently annealed in N/sub 2/ flow at 850/spl deg/C or 900/spl deg/C for 6 hours. We show that Mg diffusion doping is feasible, and that the results are highly dependent on the capping layer. However, it should be pointed out that the obtained results for different samples with the same capping layer may show significant variations in spite of similar properties before the diffusion. This is most likely due to relationship between Mg doping and the presence of threading dislocations, which hinders the reproducibility of diffusion doping process.
{"title":"Doping of GaN by Mg diffusion","authors":"T. To, A. Djurišić, M. Xie, W. Fong, C. Surya","doi":"10.1109/COMMAD.2002.1237193","DOIUrl":"https://doi.org/10.1109/COMMAD.2002.1237193","url":null,"abstract":"In this work, we report a study of GaN doping by Mg diffusion. GaN films were grown on sapphire or SiC substrates by MBE. The samples were characterized by Hall measurements and photoluminescence before and after the diffusion. The diffusion was performed in the following manner: Mg layer was deposited on the sample by thermal evaporation, followed by the deposition of a capping layer (metallic or SiO/sub 2/). Samples were subsequently annealed in N/sub 2/ flow at 850/spl deg/C or 900/spl deg/C for 6 hours. We show that Mg diffusion doping is feasible, and that the results are highly dependent on the capping layer. However, it should be pointed out that the obtained results for different samples with the same capping layer may show significant variations in spite of similar properties before the diffusion. This is most likely due to relationship between Mg doping and the presence of threading dislocations, which hinders the reproducibility of diffusion doping process.","PeriodicalId":129668,"journal":{"name":"2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133062061","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-12-11DOI: 10.1109/COMMAD.2002.1237304
K. Cheong, S. Dimitrijev, J. Han, H. B. Harrison
In this paper, we have investigated factors that affect the charge-retention time in 4H-SiC MOS capacitors, used as nonvolatile random-access memory elements. The charge-retention time is extracted from high temperature capacitance-transient (C-t) measurements. The SiC-SiO/sub 2/ interface traps, that relate to gate oxide processing conditions and the applied gate voltage (V/sub G/) as the main operation-related parameter are investigated. It is found that (1) the charge-retention time depends strongly on the interface-trap density and (2) the time is shortened when the applied gate voltage is reduced.
{"title":"Dependence of charge-retention time in 4H-SiC MOS capacitors on interface defects and applied gate voltage","authors":"K. Cheong, S. Dimitrijev, J. Han, H. B. Harrison","doi":"10.1109/COMMAD.2002.1237304","DOIUrl":"https://doi.org/10.1109/COMMAD.2002.1237304","url":null,"abstract":"In this paper, we have investigated factors that affect the charge-retention time in 4H-SiC MOS capacitors, used as nonvolatile random-access memory elements. The charge-retention time is extracted from high temperature capacitance-transient (C-t) measurements. The SiC-SiO/sub 2/ interface traps, that relate to gate oxide processing conditions and the applied gate voltage (V/sub G/) as the main operation-related parameter are investigated. It is found that (1) the charge-retention time depends strongly on the interface-trap density and (2) the time is shortened when the applied gate voltage is reduced.","PeriodicalId":129668,"journal":{"name":"2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122639552","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-12-11DOI: 10.1109/COMMAD.2002.1237303
P. Lever, H. Tan, P. Reece, M. Gal, C. Jagadish
Implantation induced interdiffusion of InGaAs quantum dots has been carried out using hydrogen and arsenic ions. Large energy shifts and significant narrowing was seen in the photoluminescence spectra of the implanted and annealed samples. Lower implantation doses were required to create similar energy shifts in quantum dot samples than reported in the quantum well case. The energy shifts and photoluminescence intensities were found to depend on the ions used, as well as the amount of damage created in the samples. Temperature dependent implantations were found to follow the trends reported for quantum wells.
{"title":"Interdiffusion in InGaAs quantum dots by ion implantation","authors":"P. Lever, H. Tan, P. Reece, M. Gal, C. Jagadish","doi":"10.1109/COMMAD.2002.1237303","DOIUrl":"https://doi.org/10.1109/COMMAD.2002.1237303","url":null,"abstract":"Implantation induced interdiffusion of InGaAs quantum dots has been carried out using hydrogen and arsenic ions. Large energy shifts and significant narrowing was seen in the photoluminescence spectra of the implanted and annealed samples. Lower implantation doses were required to create similar energy shifts in quantum dot samples than reported in the quantum well case. The energy shifts and photoluminescence intensities were found to depend on the ions used, as well as the amount of damage created in the samples. Temperature dependent implantations were found to follow the trends reported for quantum wells.","PeriodicalId":129668,"journal":{"name":"2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121674107","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-12-11DOI: 10.1109/COMMAD.2002.1237307
N. Calander, M. Willander
The optical field enhancement from plasmon resonance at spheroids is studied by solving the Maxwell's equations using spheroidal vector wave functions. The theory is applied to silver and gold. The enhancement is shown to be substantial under resonance conditions. Optical capture of fluorescent molecules to the enhancement region is discussed. Attractive as well as repulsive forces are possible depending on the wavelength. Applications for a lab-on-a-chip technology are envisaged.
{"title":"Optical filed enhancement by surface-plasmon resonance: theory and application to miro-bioelectronics","authors":"N. Calander, M. Willander","doi":"10.1109/COMMAD.2002.1237307","DOIUrl":"https://doi.org/10.1109/COMMAD.2002.1237307","url":null,"abstract":"The optical field enhancement from plasmon resonance at spheroids is studied by solving the Maxwell's equations using spheroidal vector wave functions. The theory is applied to silver and gold. The enhancement is shown to be substantial under resonance conditions. Optical capture of fluorescent molecules to the enhancement region is discussed. Attractive as well as repulsive forces are possible depending on the wavelength. Applications for a lab-on-a-chip technology are envisaged.","PeriodicalId":129668,"journal":{"name":"2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)","volume":"128 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114860852","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-12-11DOI: 10.1109/COMMAD.2002.1237290
T. Xiaohong, C. Jim, Zhang Baolin, Zhu Jinyi, Huang Gensheng
A large blue shift in the peak position of the photoluminescence excitation (PLE) spectra of n-i-p-i MQW structures have been observed when the excitation power intensity is varied from /spl sim/ 1 mW/cm/sup 2/ to /spl sim/10 W/cm/sup 2/. With multiple step-quantum wells (MS-QWs), the blue shift is found to be much larger than that of the n-i-p-i MQWs structure with normal rectangular quantum wells. The blue shift is found to be dependent on the excitation intensity I/sup ex/ in the form /spl Delta/h/spl nu//sub max/ - /spl Delta/h/spl nu//sub max/ / 1 + (I/sup ex//I/sup a/)/sup s/.
{"title":"Optical induced blueshift of PLE spectrum improvement in n-i-p-i multiple quantum well structures","authors":"T. Xiaohong, C. Jim, Zhang Baolin, Zhu Jinyi, Huang Gensheng","doi":"10.1109/COMMAD.2002.1237290","DOIUrl":"https://doi.org/10.1109/COMMAD.2002.1237290","url":null,"abstract":"A large blue shift in the peak position of the photoluminescence excitation (PLE) spectra of n-i-p-i MQW structures have been observed when the excitation power intensity is varied from /spl sim/ 1 mW/cm/sup 2/ to /spl sim/10 W/cm/sup 2/. With multiple step-quantum wells (MS-QWs), the blue shift is found to be much larger than that of the n-i-p-i MQWs structure with normal rectangular quantum wells. The blue shift is found to be dependent on the excitation intensity I/sup ex/ in the form /spl Delta/h/spl nu//sub max/ - /spl Delta/h/spl nu//sub max/ / 1 + (I/sup ex//I/sup a/)/sup s/.","PeriodicalId":129668,"journal":{"name":"2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128133746","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-12-11DOI: 10.1109/COMMAD.2002.1237312
J. McCallum, L. D. Morpeth, M. Norman
High energy ion implantation has been investigated as a means of locally doping sapphire with Ti to form Ti:sapphire: a highly valued laser material. We have characterised the properties of Ti:sapphire layers formed by this process over a wide range of ion implantation and thermal processing conditions in order to understand the mechanisms which lead to stabilisation of Ti in the required optically-active 3+ chemical state. Characterisation by a wide variety of techniques including photoluminescence (PL) and luminescence lifetime has been used to provide a detailed picture of the annealing behaviour of the ion implanted layers and the dependence of formation of Ti/sup 3+/ on the implantation conditions, annealing ambient and temperature. For annealing below about 1300/spl deg/C, the Ti can be encouraged to form the 3+ state by co-implanting O into the substrates. For anneals above 1300 /spl deg/C, the annealing ambient plays a dominant role with a reducing environment producing the highest Ti/sup 3+/ PL output and co-implantation no longer being helpful. In this regime, the Ti/sup 3+/ luminescence yield increases rapidly with increasing temperature and the lifetime approaches that of bulk Ti:sapphire. The Ti also begins to diffuse substantially. We have also observed a substrate orientation dependence to the Ti/sup 3+/ formation. Implantation into a-axis oriented substrates results in a substantial improvement in the luminescence yield: an effect which is greater than the orientation-dependence of the absorption cross-section and suggests that damage recovery and activation of the Ti may be better in a-axis oriented sapphire.
{"title":"Characterisation of Ti:sapphire layers synthesized energy ion implantation","authors":"J. McCallum, L. D. Morpeth, M. Norman","doi":"10.1109/COMMAD.2002.1237312","DOIUrl":"https://doi.org/10.1109/COMMAD.2002.1237312","url":null,"abstract":"High energy ion implantation has been investigated as a means of locally doping sapphire with Ti to form Ti:sapphire: a highly valued laser material. We have characterised the properties of Ti:sapphire layers formed by this process over a wide range of ion implantation and thermal processing conditions in order to understand the mechanisms which lead to stabilisation of Ti in the required optically-active 3+ chemical state. Characterisation by a wide variety of techniques including photoluminescence (PL) and luminescence lifetime has been used to provide a detailed picture of the annealing behaviour of the ion implanted layers and the dependence of formation of Ti/sup 3+/ on the implantation conditions, annealing ambient and temperature. For annealing below about 1300/spl deg/C, the Ti can be encouraged to form the 3+ state by co-implanting O into the substrates. For anneals above 1300 /spl deg/C, the annealing ambient plays a dominant role with a reducing environment producing the highest Ti/sup 3+/ PL output and co-implantation no longer being helpful. In this regime, the Ti/sup 3+/ luminescence yield increases rapidly with increasing temperature and the lifetime approaches that of bulk Ti:sapphire. The Ti also begins to diffuse substantially. We have also observed a substrate orientation dependence to the Ti/sup 3+/ formation. Implantation into a-axis oriented substrates results in a substantial improvement in the luminescence yield: an effect which is greater than the orientation-dependence of the absorption cross-section and suggests that damage recovery and activation of the Ti may be better in a-axis oriented sapphire.","PeriodicalId":129668,"journal":{"name":"2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)","volume":"55 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114483409","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-12-11DOI: 10.1109/COMMAD.2002.1237301
A. K. Saxena
It is shown that capacitance spectroscopy on quantum well heterostructures using Schottky barrier diodes, combined with photoluminescence (PL) measurements provides a powerful tool in determining conduction and valence band discontinuities, which are determined to be 72% and 28% of the band gap difference. The electron capture is indicative of a Coulomb's repulsive field. The C-V measurements have also been interpreted to physically locate the position of the well under the surface and the result agrees closely with the value of electrochemical profiling. Further, capacitance spectroscopy under hydrostatic pressure has been used to identify the quantum well and bulk trap emissions. Two electron bulk traps at 0.84 eV and 0.73 eV in the top GaAlAs layer were also detected and the 0.84 eV level is possibly a complex of gallium vacancy and arsenic-gallium antisite defect.
{"title":"Determination of band off-sets in MBE grown GaAlAs/GaAs/GaAlAs quantum well heterostructures: application of DLTS and photoluminescence under hydrostatic pressure","authors":"A. K. Saxena","doi":"10.1109/COMMAD.2002.1237301","DOIUrl":"https://doi.org/10.1109/COMMAD.2002.1237301","url":null,"abstract":"It is shown that capacitance spectroscopy on quantum well heterostructures using Schottky barrier diodes, combined with photoluminescence (PL) measurements provides a powerful tool in determining conduction and valence band discontinuities, which are determined to be 72% and 28% of the band gap difference. The electron capture is indicative of a Coulomb's repulsive field. The C-V measurements have also been interpreted to physically locate the position of the well under the surface and the result agrees closely with the value of electrochemical profiling. Further, capacitance spectroscopy under hydrostatic pressure has been used to identify the quantum well and bulk trap emissions. Two electron bulk traps at 0.84 eV and 0.73 eV in the top GaAlAs layer were also detected and the 0.84 eV level is possibly a complex of gallium vacancy and arsenic-gallium antisite defect.","PeriodicalId":129668,"journal":{"name":"2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)","volume":"83 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125632865","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-12-11DOI: 10.1109/COMMAD.2002.1237228
D. Kane, A. Fernandes, D. Hirschausen, S. Pleasants, B. Ward
An overview is given of recent achievements of the Materials Processing Branch of the Short Wavelengths and Interactions with Materials (SWIM) program at Macquarie University. This research focuses on using short-pulsed UV lasers and other novel VUV sources to clean small particles (including sub-micron particles) and hydrocarbons from optical, optoelectronic and photonic materials.
{"title":"Recent advances in UV and VUV cleaning of optical materials","authors":"D. Kane, A. Fernandes, D. Hirschausen, S. Pleasants, B. Ward","doi":"10.1109/COMMAD.2002.1237228","DOIUrl":"https://doi.org/10.1109/COMMAD.2002.1237228","url":null,"abstract":"An overview is given of recent achievements of the Materials Processing Branch of the Short Wavelengths and Interactions with Materials (SWIM) program at Macquarie University. This research focuses on using short-pulsed UV lasers and other novel VUV sources to clean small particles (including sub-micron particles) and hydrocarbons from optical, optoelectronic and photonic materials.","PeriodicalId":129668,"journal":{"name":"2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124516674","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-12-11DOI: 10.1109/COMMAD.2002.1237254
Y. Kishimoto, S. Saravanan, K. Kubota, P. Vaccaro, M. Sato, J.M. Zanardi Ocampo, T. Aida, N. Ohtani, M. Hosoda
A semiconductor quantum-well (QW) microtube was fabricated by rolling up an approximately 40-nm thick semiconductor layer containing a narrow-width QW. Subband energy modification in the QW microtube was studied by the change in the photoluminescence properties before and after the layer was rolled up into the microtube. We observed type-II to type-I transition in the electronic subband structure due to the strain effect in the microtube.
{"title":"Observation of electronic band-structure modification in microtubed quantum well","authors":"Y. Kishimoto, S. Saravanan, K. Kubota, P. Vaccaro, M. Sato, J.M. Zanardi Ocampo, T. Aida, N. Ohtani, M. Hosoda","doi":"10.1109/COMMAD.2002.1237254","DOIUrl":"https://doi.org/10.1109/COMMAD.2002.1237254","url":null,"abstract":"A semiconductor quantum-well (QW) microtube was fabricated by rolling up an approximately 40-nm thick semiconductor layer containing a narrow-width QW. Subband energy modification in the QW microtube was studied by the change in the photoluminescence properties before and after the layer was rolled up into the microtube. We observed type-II to type-I transition in the electronic subband structure due to the strain effect in the microtube.","PeriodicalId":129668,"journal":{"name":"2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)","volume":"2015 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127778427","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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