Pub Date : 2025-11-12DOI: 10.1109/LPT.2025.3631796
Yunjing He;Dong Zhou;Weizong Xu;Feng Zhou;Fangfang Ren;Dunjun Chen;Rong Zhang;Youdou Zheng;Hai Lu
In this work, the reliability properties of Si photodetectors (PDs) and wide-bandgap semiconductor-based PDs, represented by SiC and GaN PDs, are compared upon high-dose ultra-violet (UV) irradiation. A high-power 275 nm UV light-emitting diode module with continuous-wave (CW) emission and a 266 nm nanosecond pulsed laser are selected as the aging light sources. It is found that after a cumulative 1 MJ/cm2 CW irradiation dose at 275 nm, the SiC and GaN PDs both exhibit a responsivity rise of ~3 %, while the Si PD exhibit a responsivity drop of more than 6 %. For the 266 nm pulsed laser irradiation with a peak power density of ~5 kW/cm ${}^{mathbf {2}}$ , when the cumulative dose reaches 0.1 MJ/cm ${}^{mathbf {2}}$ , the responsivity of the Si PD decreases by 6 %, while the SiC and GaN PDs show virtually no change in responsivity. Meanwhile, the dark current of the Si PD shows considerably larger increase than those of the SiC and GaN PDs upon pulsed UV laser irradiation.
{"title":"Reliability Performance Study of SiC, GaN, and Si Photodetectors Under High-Dose UV Irradiation","authors":"Yunjing He;Dong Zhou;Weizong Xu;Feng Zhou;Fangfang Ren;Dunjun Chen;Rong Zhang;Youdou Zheng;Hai Lu","doi":"10.1109/LPT.2025.3631796","DOIUrl":"https://doi.org/10.1109/LPT.2025.3631796","url":null,"abstract":"In this work, the reliability properties of Si photodetectors (PDs) and wide-bandgap semiconductor-based PDs, represented by SiC and GaN PDs, are compared upon high-dose ultra-violet (UV) irradiation. A high-power 275 nm UV light-emitting diode module with continuous-wave (CW) emission and a 266 nm nanosecond pulsed laser are selected as the aging light sources. It is found that after a cumulative 1 MJ/cm2 CW irradiation dose at 275 nm, the SiC and GaN PDs both exhibit a responsivity rise of ~3 %, while the Si PD exhibit a responsivity drop of more than 6 %. For the 266 nm pulsed laser irradiation with a peak power density of ~5 kW/cm <inline-formula> <tex-math>${}^{mathbf {2}}$ </tex-math></inline-formula>, when the cumulative dose reaches 0.1 MJ/cm <inline-formula> <tex-math>${}^{mathbf {2}}$ </tex-math></inline-formula>, the responsivity of the Si PD decreases by 6 %, while the SiC and GaN PDs show virtually no change in responsivity. Meanwhile, the dark current of the Si PD shows considerably larger increase than those of the SiC and GaN PDs upon pulsed UV laser irradiation.","PeriodicalId":13065,"journal":{"name":"IEEE Photonics Technology Letters","volume":"38 4","pages":"287-290"},"PeriodicalIF":2.5,"publicationDate":"2025-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145612161","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-11-11DOI: 10.1109/LPT.2025.3631648
Xiangdong Xie;Chao Zhang
Laguerre–Gaussian (LG) modes, as vortex beams with well-defined OAM (orbital angular momentum), have been extensively studied. For applications, accurate identification of the radial and azimuthal indices of LG beams is essential. Various methods have been proposed to identify these indices. However, most of these approaches can only identify one of the two indices. In particular, by employing a $pi /2$ mode converter, LG modes can be transformed into the corresponding HG modes. In this case, the two indices of a single LG mode can then be indirectly determined from the number of intensity lobes of the transformed single HG mode. However, this method is limited to identifying beams with a single LG mode and is not applicable to beams with multiple LG modes. To overcome this limitation, we propose a method to decompose beams containing multiple LG modes based on the $pi /2$ mode converter. The proposed method can determine the mode composition and weight coefficients of beams with multiple LG modes. Crucially, this method requires only intensity measurements and no phase information, which significantly facilitates its applications. Moreover, the simulation results validate the proposed method and demonstrate its robustness under low signal-to-noise ratio conditions.
{"title":"Mode Decomposition of Mixed Laguerre–Gaussian Beams With Intensity-Only Measurements","authors":"Xiangdong Xie;Chao Zhang","doi":"10.1109/LPT.2025.3631648","DOIUrl":"https://doi.org/10.1109/LPT.2025.3631648","url":null,"abstract":"Laguerre–Gaussian (LG) modes, as vortex beams with well-defined OAM (orbital angular momentum), have been extensively studied. For applications, accurate identification of the radial and azimuthal indices of LG beams is essential. Various methods have been proposed to identify these indices. However, most of these approaches can only identify one of the two indices. In particular, by employing a <inline-formula> <tex-math>$pi /2$ </tex-math></inline-formula> mode converter, LG modes can be transformed into the corresponding HG modes. In this case, the two indices of a single LG mode can then be indirectly determined from the number of intensity lobes of the transformed single HG mode. However, this method is limited to identifying beams with a single LG mode and is not applicable to beams with multiple LG modes. To overcome this limitation, we propose a method to decompose beams containing multiple LG modes based on the <inline-formula> <tex-math>$pi /2$ </tex-math></inline-formula> mode converter. The proposed method can determine the mode composition and weight coefficients of beams with multiple LG modes. Crucially, this method requires only intensity measurements and no phase information, which significantly facilitates its applications. Moreover, the simulation results validate the proposed method and demonstrate its robustness under low signal-to-noise ratio conditions.","PeriodicalId":13065,"journal":{"name":"IEEE Photonics Technology Letters","volume":"38 4","pages":"263-266"},"PeriodicalIF":2.5,"publicationDate":"2025-11-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145612158","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-11-10DOI: 10.1109/LPT.2025.3631106
Manvendra Chauhan;Satinder K. Sharma
Neuromorphic systems require energy-efficient non-volatile memories (NVMs) with electrical and optical tunability. We demonstrate phototunable bipolar resistive switching (RS) in Ag/(PEA)${}_{mathbf {3}}$ EuBr${}_{mathbf {6}}$ /FTO devices using a 2D Eu-based perovskite switching layer (SL). The devices displayed forming-free operation with low SET/RESET voltages (±0.48 V in dark, ±0.42 V under 365 nm illumination). UV illumination enhances the memory window ($sim 3.0boldsymbol {times }$ 10${}^{mathbf {3}}$ to $sim 4.8boldsymbol {times } 10^{mathbf {3}}$ ) and exhibited improved endurance and retention properties. Synaptic behaviors, including potentiation/depression and EPSC responses, exhibit higher linearity and expanded dynamic range under optical bias. Ultralow switching energies (0.62/0.27 pJ in dark; 1.23/0.17 pJ under UV) highlight the efficiency of this system. These results establish Eu-based 2D perovskites as promising, eco-friendly candidates for phototunable neuromorphic memory.
{"title":"Energy-Efficient Europium-Based 2D Perovskite ReRAM for Photo-Tunable Neuromorphic Computing","authors":"Manvendra Chauhan;Satinder K. Sharma","doi":"10.1109/LPT.2025.3631106","DOIUrl":"https://doi.org/10.1109/LPT.2025.3631106","url":null,"abstract":"Neuromorphic systems require energy-efficient non-volatile memories (NVMs) with electrical and optical tunability. We demonstrate phototunable bipolar resistive switching (RS) in Ag/(PEA)<inline-formula> <tex-math>${}_{mathbf {3}}$ </tex-math></inline-formula> EuBr<inline-formula> <tex-math>${}_{mathbf {6}}$ </tex-math></inline-formula>/FTO devices using a 2D Eu-based perovskite switching layer (SL). The devices displayed forming-free operation with low SET/RESET voltages (±0.48 V in dark, ±0.42 V under 365 nm illumination). UV illumination enhances the memory window (<inline-formula> <tex-math>$sim 3.0boldsymbol {times }$ </tex-math></inline-formula>10<inline-formula> <tex-math>${}^{mathbf {3}}$ </tex-math></inline-formula> to <inline-formula> <tex-math>$sim 4.8boldsymbol {times } 10^{mathbf {3}}$ </tex-math></inline-formula>) and exhibited improved endurance and retention properties. Synaptic behaviors, including potentiation/depression and EPSC responses, exhibit higher linearity and expanded dynamic range under optical bias. Ultralow switching energies (0.62/0.27 pJ in dark; 1.23/0.17 pJ under UV) highlight the efficiency of this system. These results establish Eu-based 2D perovskites as promising, eco-friendly candidates for phototunable neuromorphic memory.","PeriodicalId":13065,"journal":{"name":"IEEE Photonics Technology Letters","volume":"38 4","pages":"291-294"},"PeriodicalIF":2.5,"publicationDate":"2025-11-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145778438","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-11-10DOI: 10.1109/LPT.2025.3630812
Dongming Zhang;Yunpeng Wang;Xinyu Cai;Wentao Zhou;Weinan Yan;Yang Li;Hailin Hu;Pingxue Li
In this letter, we propose a novel approach for a $2.05~mu $ m high-energy single-frequency pulsed polarization-maintaining Tm-doped fiber (TDF) laser amplifier, by utilizing a different length of unpumped Ho-doped fiber (HDF) as an efficient amplified spontaneous emission (ASE) absorber in the pre-amplifier stage to suppress the ASE and parasitic oscillation of the main amplifier. At an injected power of 8 mW into the main amplifier, the preamplifier signal-to-noise ratio (SNR) is increased from 40 dB to 46 dB, and the maximum pulse energy of the main amplifier is $820~mu $ J, corresponding to a peak power of 2.2 kW at a pulse repetition frequency (PRF) of 2 kHz and a pulse width of 370 ns. At a preamplifier pump power of 3 W, the preamplifier SNR is increased from 28 dB to 47 dB, and the pulse energy of the main amplifier is boosted from $430~mu $ J to $780~mu $ J at the optimal length of the HDF, raising the parasitic oscillation threshold by 1.8 times. The linewidth of the single-frequency light is about 1.82 MHz, which is close to the Fourier transform limit. The beam quality factor M2 is estimated to be about 1.12 in the $x$ direction and 1.18 in the $y$ direction, respectively.
{"title":"2.05 μm High-Energy Single-Frequency Fiber Amplifier by Suppressing ASE and Parasitic Oscillations","authors":"Dongming Zhang;Yunpeng Wang;Xinyu Cai;Wentao Zhou;Weinan Yan;Yang Li;Hailin Hu;Pingxue Li","doi":"10.1109/LPT.2025.3630812","DOIUrl":"https://doi.org/10.1109/LPT.2025.3630812","url":null,"abstract":"In this letter, we propose a novel approach for a <inline-formula> <tex-math>$2.05~mu $ </tex-math></inline-formula>m high-energy single-frequency pulsed polarization-maintaining Tm-doped fiber (TDF) laser amplifier, by utilizing a different length of unpumped Ho-doped fiber (HDF) as an efficient amplified spontaneous emission (ASE) absorber in the pre-amplifier stage to suppress the ASE and parasitic oscillation of the main amplifier. At an injected power of 8 mW into the main amplifier, the preamplifier signal-to-noise ratio (SNR) is increased from 40 dB to 46 dB, and the maximum pulse energy of the main amplifier is <inline-formula> <tex-math>$820~mu $ </tex-math></inline-formula>J, corresponding to a peak power of 2.2 kW at a pulse repetition frequency (PRF) of 2 kHz and a pulse width of 370 ns. At a preamplifier pump power of 3 W, the preamplifier SNR is increased from 28 dB to 47 dB, and the pulse energy of the main amplifier is boosted from <inline-formula> <tex-math>$430~mu $ </tex-math></inline-formula>J to <inline-formula> <tex-math>$780~mu $ </tex-math></inline-formula>J at the optimal length of the HDF, raising the parasitic oscillation threshold by 1.8 times. The linewidth of the single-frequency light is about 1.82 MHz, which is close to the Fourier transform limit. The beam quality factor M2 is estimated to be about 1.12 in the <inline-formula> <tex-math>$x$ </tex-math></inline-formula> direction and 1.18 in the <inline-formula> <tex-math>$y$ </tex-math></inline-formula> direction, respectively.","PeriodicalId":13065,"journal":{"name":"IEEE Photonics Technology Letters","volume":"38 4","pages":"255-258"},"PeriodicalIF":2.5,"publicationDate":"2025-11-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145560813","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-11-10DOI: 10.1109/LPT.2025.3630583
Zhongye Xie;Shizhuo Wang;Huabiao Ke;Liping Zeng;Fujie Wang;Jinghua Sun
Structured illumination microscopy based on phase-shift technique (PS-SIM) has been proposed for precise three-dimensional (3D) reconstruction. In this method, multi frames with pre-defined phase difference are used to calculate the modulation and further determine the 3D shape. Although PS-SIM can reach high measurement accuracy, this method is sensitive to phase-shift error and harmonics caused by digital micro-mirror device (DMD) and camera. In this letter, we propose a method named pixel reassigned structured illumination microscope (PR-SIM), which has the ability to resist harmonics and achieve high measurement accuracy. In this method, the pixels of three phase-shift images are reassigned to generate a new fusion image. After that, two-dimensional Fourier transform is performed on the generated image to obtain the frequency spectrum. In frequency domain, the part of harmonics is effectively separated, and thus precise modulation distribution can be determined. Compared with conventional PS-SIM, this method can effectively suppress the influence of harmonics and achieve accurate measurement. The simulations and experiments are conducted to justify the feasibility of proposed method.
{"title":"Pixel Reassigned Structured Illumination Microscopy With Harmonics Suppression for 3D Measurement","authors":"Zhongye Xie;Shizhuo Wang;Huabiao Ke;Liping Zeng;Fujie Wang;Jinghua Sun","doi":"10.1109/LPT.2025.3630583","DOIUrl":"https://doi.org/10.1109/LPT.2025.3630583","url":null,"abstract":"Structured illumination microscopy based on phase-shift technique (PS-SIM) has been proposed for precise three-dimensional (3D) reconstruction. In this method, multi frames with pre-defined phase difference are used to calculate the modulation and further determine the 3D shape. Although PS-SIM can reach high measurement accuracy, this method is sensitive to phase-shift error and harmonics caused by digital micro-mirror device (DMD) and camera. In this letter, we propose a method named pixel reassigned structured illumination microscope (PR-SIM), which has the ability to resist harmonics and achieve high measurement accuracy. In this method, the pixels of three phase-shift images are reassigned to generate a new fusion image. After that, two-dimensional Fourier transform is performed on the generated image to obtain the frequency spectrum. In frequency domain, the part of harmonics is effectively separated, and thus precise modulation distribution can be determined. Compared with conventional PS-SIM, this method can effectively suppress the influence of harmonics and achieve accurate measurement. The simulations and experiments are conducted to justify the feasibility of proposed method.","PeriodicalId":13065,"journal":{"name":"IEEE Photonics Technology Letters","volume":"38 4","pages":"259-262"},"PeriodicalIF":2.5,"publicationDate":"2025-11-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145560814","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-11-04DOI: 10.1109/LPT.2025.3628742
Junjie Mao;Yangyang Wang;Kuo Hua;Changyu Shen;Chen Liu
An accurate dispersion measurement approach for chirped fiber Bragg gratings (CFBGs) based on a wavelength-tunable mode-locked fiber laser is proposed and demonstrated. The relationship between group delay and the mode-locked laser’s repetition rate is analytically derived. Dispersion information and the tunning ranges of $2^{mathbf {nd}}$ and $3^{mathbf {rd}}$ dispersion coefficients of a commercial tunable CFBG are determined experimentally, which are agree well with the specifications provided by the manufacturer. Compared with other techniques, the proposed method is straightforward to operate. The retrieved high-order dispersion information of CFBGs will be greatly benefit to the fiber chirped-pulse amplification system and ultrafast laser techniques.
{"title":"Dispersion Measurement of Chirped Fiber Bragg Grating Using a Tunable Mode-Locked Laser","authors":"Junjie Mao;Yangyang Wang;Kuo Hua;Changyu Shen;Chen Liu","doi":"10.1109/LPT.2025.3628742","DOIUrl":"https://doi.org/10.1109/LPT.2025.3628742","url":null,"abstract":"An accurate dispersion measurement approach for chirped fiber Bragg gratings (CFBGs) based on a wavelength-tunable mode-locked fiber laser is proposed and demonstrated. The relationship between group delay and the mode-locked laser’s repetition rate is analytically derived. Dispersion information and the tunning ranges of <inline-formula> <tex-math>$2^{mathbf {nd}}$ </tex-math></inline-formula> and <inline-formula> <tex-math>$3^{mathbf {rd}}$ </tex-math></inline-formula> dispersion coefficients of a commercial tunable CFBG are determined experimentally, which are agree well with the specifications provided by the manufacturer. Compared with other techniques, the proposed method is straightforward to operate. The retrieved high-order dispersion information of CFBGs will be greatly benefit to the fiber chirped-pulse amplification system and ultrafast laser techniques.","PeriodicalId":13065,"journal":{"name":"IEEE Photonics Technology Letters","volume":"38 4","pages":"239-242"},"PeriodicalIF":2.5,"publicationDate":"2025-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145500520","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-11-03DOI: 10.1109/LPT.2025.3627909
Jie Li;Yongqi Ye;Daixn Lian;Shi Zhao;Jingye Chen;Yaocheng Shi
A high-performance lithium niobate TM-pass polarizer is proposed and demonstrated experimentally. It is based on polymer-loaded lithium niobate on an insulator (LNOI) platform harnessing bound states in the continuum. In polymer-LNOI ridge waveguides, the TM polarization wave will undergo mode leakage, of which the intensity depends on the width and radius of ridge waveguides. Bound states in the continuum points are formed when the waveguide satisfies certain ridge width and radius conditions, leading to suppression of leakage loss. An extremely high extinction ratio can be achieved by leaking the TE light in the slab using a bent waveguide. The 3D FDTD simulations show a TM loss of less than 0.4 dB and an extinction ratio greater than 34 dB over a 100 nm wavelength range from 1500 to 1600 nm. The measured insertion loss is <0.8>20 dB) over 70 nm wavelength range (1530 to 1600 nm).
{"title":"Etchless Lithium Niobate TM-Pass Polarizer Based on Bound States in the Continuum","authors":"Jie Li;Yongqi Ye;Daixn Lian;Shi Zhao;Jingye Chen;Yaocheng Shi","doi":"10.1109/LPT.2025.3627909","DOIUrl":"https://doi.org/10.1109/LPT.2025.3627909","url":null,"abstract":"A high-performance lithium niobate TM-pass polarizer is proposed and demonstrated experimentally. It is based on polymer-loaded lithium niobate on an insulator (LNOI) platform harnessing bound states in the continuum. In polymer-LNOI ridge waveguides, the TM polarization wave will undergo mode leakage, of which the intensity depends on the width and radius of ridge waveguides. Bound states in the continuum points are formed when the waveguide satisfies certain ridge width and radius conditions, leading to suppression of leakage loss. An extremely high extinction ratio can be achieved by leaking the TE light in the slab using a bent waveguide. The 3D FDTD simulations show a TM loss of less than 0.4 dB and an extinction ratio greater than 34 dB over a 100 nm wavelength range from 1500 to 1600 nm. The measured insertion loss is <0.8>20 dB) over 70 nm wavelength range (1530 to 1600 nm).","PeriodicalId":13065,"journal":{"name":"IEEE Photonics Technology Letters","volume":"38 4","pages":"223-226"},"PeriodicalIF":2.5,"publicationDate":"2025-11-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145500486","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-11-03DOI: 10.1109/LPT.2025.3628068
Natalia V. Kryzhanovskaya;Sergey D. Komarov;Eduard I. Moiseev;Konstantin A. Ivanov;Dmitry A. Masyutin;Ivan S. Makhov;Andrey F. Tsatsul'nikov;Alexey V. Sakharov;Dmitry S. Arteev;Evgenii V. Lutsenko;Aliaksei G. Vainilovich;Andrey E. Nikolaev;Evgeniy E. Zavarin;Antonina A. Pivovarova;Natalia D. Il'inskaya;Irina P. Smirnova;Lev K. Markov;Nikolay Cherkashin;Alexey E. Zhukov
III-N ring microlasers on a silicon substrate with InGaN/GaN active layers emitting near 420 nm were investigated. The growth conditions and fabrication steps were optimized to realize stable lasing under optical pumping in cavities with a diameter of 6-$10~mu $ m. Chemically sensitive transmission electron microscopy images indicate that InGaN layers present in form of isolated islands. Between these InGaN islands, large areas of GaN are visible, forming barriers to lateral transport of free charge carriers in the active region and preventing their nonradiative surface recombination. For the first time, temperature stability of InGaN/GaN microring lasers characteristics are studied and lasing up to 100 degrees Celsius is demonstrated with the wavelength shift less than 1 nm. At room temperature, the threshold pump power is as low as 220 kW/cm${}^{mathbf {2}}$ . The obtained results significantly expand the potential areas of application of III-N microlasers.
{"title":"High Temperature Operation and Spectral Stability of InGaN/GaN Ring Microlasers on Silicon","authors":"Natalia V. Kryzhanovskaya;Sergey D. Komarov;Eduard I. Moiseev;Konstantin A. Ivanov;Dmitry A. Masyutin;Ivan S. Makhov;Andrey F. Tsatsul'nikov;Alexey V. Sakharov;Dmitry S. Arteev;Evgenii V. Lutsenko;Aliaksei G. Vainilovich;Andrey E. Nikolaev;Evgeniy E. Zavarin;Antonina A. Pivovarova;Natalia D. Il'inskaya;Irina P. Smirnova;Lev K. Markov;Nikolay Cherkashin;Alexey E. Zhukov","doi":"10.1109/LPT.2025.3628068","DOIUrl":"https://doi.org/10.1109/LPT.2025.3628068","url":null,"abstract":"III-N ring microlasers on a silicon substrate with InGaN/GaN active layers emitting near 420 nm were investigated. The growth conditions and fabrication steps were optimized to realize stable lasing under optical pumping in cavities with a diameter of 6-<inline-formula> <tex-math>$10~mu $ </tex-math></inline-formula>m. Chemically sensitive transmission electron microscopy images indicate that InGaN layers present in form of isolated islands. Between these InGaN islands, large areas of GaN are visible, forming barriers to lateral transport of free charge carriers in the active region and preventing their nonradiative surface recombination. For the first time, temperature stability of InGaN/GaN microring lasers characteristics are studied and lasing up to 100 degrees Celsius is demonstrated with the wavelength shift less than 1 nm. At room temperature, the threshold pump power is as low as 220 kW/cm<inline-formula> <tex-math>${}^{mathbf {2}}$ </tex-math></inline-formula>. The obtained results significantly expand the potential areas of application of III-N microlasers.","PeriodicalId":13065,"journal":{"name":"IEEE Photonics Technology Letters","volume":"38 4","pages":"243-246"},"PeriodicalIF":2.5,"publicationDate":"2025-11-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145500493","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-11-03DOI: 10.1109/LPT.2025.3627981
Kan Tian;Wei-Zhe Wang;Yu-Chao Zhou;Jun-Bo Mao;Yu-Fen Sun;Mao-Xing Xiang;Tao Pu;Xiao-Shuai Guo;Chang-Tao He;Wen-Long Li;Hou-Kun Liang;Yong-Hua Shi
We present a temperature-tuning optical parametric amplifier (OPA) based on a BaGa4S7 (BGS) crystal, which enables alignment-free spectral tuning across the mid-infrared (MIR) wavelength range. Utilizing the temperature-dependent birefringence of BGS, continuous wavelength tuning is realized without mechanical adjustment of the crystal phase-matching (PM) angle. With fixed PM angles of $theta = 4.1^{circ }$ and 11.1°, the system achieves broadband spectral tunability from 5.8–$7.35~mu $ m and 7–$10.3mu $ m, respectively, over a crystal temperature range of 20–160°C, covering molecular fingerprint regions. The alignment-free tuning mechanism ensures excellent beam-pointing stability, thereby addressing a key limitation of conventional angle-tuned OPAs. These results demonstrate that BGS serves as a flexible platform for temperature-controlled MIR light sources, offering a scalable solution for achieving spectral agility in ultrafast laser systems. This approach holds promise for applications such as molecular spectroscopy, where it eliminates the need for mechanical complexity and alignment procedures.
{"title":"Broadband Tunable Optical Parametric Amplifier Based on Temperature Variation of BaGa4S7 Crystal","authors":"Kan Tian;Wei-Zhe Wang;Yu-Chao Zhou;Jun-Bo Mao;Yu-Fen Sun;Mao-Xing Xiang;Tao Pu;Xiao-Shuai Guo;Chang-Tao He;Wen-Long Li;Hou-Kun Liang;Yong-Hua Shi","doi":"10.1109/LPT.2025.3627981","DOIUrl":"https://doi.org/10.1109/LPT.2025.3627981","url":null,"abstract":"We present a temperature-tuning optical parametric amplifier (OPA) based on a BaGa4S7 (BGS) crystal, which enables alignment-free spectral tuning across the mid-infrared (MIR) wavelength range. Utilizing the temperature-dependent birefringence of BGS, continuous wavelength tuning is realized without mechanical adjustment of the crystal phase-matching (PM) angle. With fixed PM angles of <inline-formula> <tex-math>$theta = 4.1^{circ }$ </tex-math></inline-formula> and 11.1°, the system achieves broadband spectral tunability from 5.8–<inline-formula> <tex-math>$7.35~mu $ </tex-math></inline-formula>m and 7–<inline-formula> <tex-math>$10.3mu $ </tex-math></inline-formula>m, respectively, over a crystal temperature range of 20–160°C, covering molecular fingerprint regions. The alignment-free tuning mechanism ensures excellent beam-pointing stability, thereby addressing a key limitation of conventional angle-tuned OPAs. These results demonstrate that BGS serves as a flexible platform for temperature-controlled MIR light sources, offering a scalable solution for achieving spectral agility in ultrafast laser systems. This approach holds promise for applications such as molecular spectroscopy, where it eliminates the need for mechanical complexity and alignment procedures.","PeriodicalId":13065,"journal":{"name":"IEEE Photonics Technology Letters","volume":"38 3","pages":"203-206"},"PeriodicalIF":2.5,"publicationDate":"2025-11-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145500492","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In this letter, we report the fabrication and characterization of a metal–semiconductor–metal (MSM) deep-ultraviolet (DUV) photodetector based on $alpha $ -Ga2O3 thin films grown by mist chemical vapor deposition (mist-CVD). The $alpha $ -Ga2O3 films exhibit excellent crystallinity and surface uniformity, enabling the realization of high-performance DUV photodetectors. The fabricated device achieves an ultra-high responsivity exceeding 1000 A/W at 210 nm, an ultra-low dark current of 0.12 pA at 5 V, and a high UV-to-visible rejection ratio of $sim 10^{5}$ . In addition, a temporal response with a decay time of millisecond scale is observed. These results demonstrate the viability of mist-CVD-grown $alpha $ -Ga2O3 for scalable and cost-effective fabrication of next-generation DUV optoelectronic devices.
{"title":"High Performance α-Ga2O3 Deep Ultraviolet Photodetector Grown by Mist-CVD","authors":"Haoxuan Peng;Suhao Yao;Yingxu Wang;Maolin Zhang;Weihua Tang;Yufeng Guo","doi":"10.1109/LPT.2025.3627605","DOIUrl":"https://doi.org/10.1109/LPT.2025.3627605","url":null,"abstract":"In this letter, we report the fabrication and characterization of a metal–semiconductor–metal (MSM) deep-ultraviolet (DUV) photodetector based on <inline-formula> <tex-math>$alpha $ </tex-math></inline-formula>-Ga2O3 thin films grown by mist chemical vapor deposition (mist-CVD). The <inline-formula> <tex-math>$alpha $ </tex-math></inline-formula>-Ga2O3 films exhibit excellent crystallinity and surface uniformity, enabling the realization of high-performance DUV photodetectors. The fabricated device achieves an ultra-high responsivity exceeding 1000 A/W at 210 nm, an ultra-low dark current of 0.12 pA at 5 V, and a high UV-to-visible rejection ratio of <inline-formula> <tex-math>$sim 10^{5}$ </tex-math></inline-formula>. In addition, a temporal response with a decay time of millisecond scale is observed. These results demonstrate the viability of mist-CVD-grown <inline-formula> <tex-math>$alpha $ </tex-math></inline-formula>-Ga2O3 for scalable and cost-effective fabrication of next-generation DUV optoelectronic devices.","PeriodicalId":13065,"journal":{"name":"IEEE Photonics Technology Letters","volume":"38 4","pages":"219-222"},"PeriodicalIF":2.5,"publicationDate":"2025-10-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145500496","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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