Pub Date : 2024-12-13DOI: 10.1109/LPT.2024.3517424
Juan J. Paniagua-Medina;Everardo Vargas-Rodriguez;Ana Dinora Guzman-Chavez;Jose Carmen Morales-Castro;Roberto J. Correa-Jurado
In this work, a random forest regression was used to predict the temperature of an interferometric optical sensor over a wide measurement range, overcoming several times the $2pi $ ambiguities. In particular, in the Fabry-Perot interferometer, this phenomenon is related to the free spectral range (FSR) of the fringes. Additionally, spectral features such as wavelength and amplitude of fringe peaks usually present nonlinear relationships with the target physical variable, in this case temperature. Here, it is shown that by using a random forest (RF) regression it is possible to overcome several FSR ambiguities, to widen the measurement range by a factor of 8 from 5.2 to 49.6 °C, with a RMSE of 0.04554 °C and a MAE of 0.0317 °C.
{"title":"Random Forest Regression for Improving the Measurement Range of a Temperature Interferometric Sensor","authors":"Juan J. Paniagua-Medina;Everardo Vargas-Rodriguez;Ana Dinora Guzman-Chavez;Jose Carmen Morales-Castro;Roberto J. Correa-Jurado","doi":"10.1109/LPT.2024.3517424","DOIUrl":"https://doi.org/10.1109/LPT.2024.3517424","url":null,"abstract":"In this work, a random forest regression was used to predict the temperature of an interferometric optical sensor over a wide measurement range, overcoming several times the \u0000<inline-formula> <tex-math>$2pi $ </tex-math></inline-formula>\u0000 ambiguities. In particular, in the Fabry-Perot interferometer, this phenomenon is related to the free spectral range (FSR) of the fringes. Additionally, spectral features such as wavelength and amplitude of fringe peaks usually present nonlinear relationships with the target physical variable, in this case temperature. Here, it is shown that by using a random forest (RF) regression it is possible to overcome several FSR ambiguities, to widen the measurement range by a factor of 8 from 5.2 to 49.6 °C, with a RMSE of 0.04554 °C and a MAE of 0.0317 °C.","PeriodicalId":13065,"journal":{"name":"IEEE Photonics Technology Letters","volume":"37 2","pages":"101-104"},"PeriodicalIF":2.3,"publicationDate":"2024-12-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142858985","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-12-13DOI: 10.1109/LPT.2024.3517423
Mingjun Dai;Hui Lv;Chao Niu;Yunlong Du
Electrostatic discharge (ESD) failure is a reliability concern for InP-based semiconductor lasers. An analysis of ESD-induced failures in AlGaInAs/InP-based DFB semiconductor lasers reveals that the primary degradation mechanism is optical absorption in the active layer at the laser facet. XPS results demonstrate that device failures caused by ESD can be effectively mitigated through surface cleaning and passivation, with this effect attributed to a reduction in non-radiative recombination at the facet.
{"title":"Improvement of Antistatic Discharge Performance of 1.3-μm AlGaInAs/InP Semiconductor Lasers","authors":"Mingjun Dai;Hui Lv;Chao Niu;Yunlong Du","doi":"10.1109/LPT.2024.3517423","DOIUrl":"https://doi.org/10.1109/LPT.2024.3517423","url":null,"abstract":"Electrostatic discharge (ESD) failure is a reliability concern for InP-based semiconductor lasers. An analysis of ESD-induced failures in AlGaInAs/InP-based DFB semiconductor lasers reveals that the primary degradation mechanism is optical absorption in the active layer at the laser facet. XPS results demonstrate that device failures caused by ESD can be effectively mitigated through surface cleaning and passivation, with this effect attributed to a reduction in non-radiative recombination at the facet.","PeriodicalId":13065,"journal":{"name":"IEEE Photonics Technology Letters","volume":"37 3","pages":"129-132"},"PeriodicalIF":2.3,"publicationDate":"2024-12-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142905833","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-12-12DOI: 10.1109/LPT.2024.3516365
Xu Liu;Lin Ma;Yijun Yu;Qiancheng Yu;Jinhua Wu;Zuyuan He
We propose polymer waveguides with large refractive index contrast by adopting organic-inorganic hybrid resin and fluorinated acrylate resin as core and cladding materials, respectively. Both types of polymer materials are UV-curable and exhibit excellent compatibility throughout the fabrication process. The fabricated hybrid waveguides show good stabilities and the additional loss due to the adoption of two types of materials is negligible. In the experiment, we succeeded in the design and fabrication of hybrid polymer waveguides with a relative refractive index contrast ( $Delta $ ) as high as 7.7%. The measured bending loss of the waveguide is about 0.1 dB/90° turning under a bending radius of 1 mm at a wavelength of 1310 nm which is critical in realizing waveguide with complex topology and ultra-high density. The core dimension of the waveguide is $4.5 times ; 4.5 ; mu $ m2 which guarantees low-loss interconnection with a typical silicon chip. The proposed method is useful in tuning the refractive index of waveguides in a wide range and the fabricated waveguide is promising for high-density optical interconnects application.
采用有机-无机杂化树脂和氟化丙烯酸酯树脂分别作为芯材和包层材料，提出了具有大折射率对比度的聚合物波导。两种类型的聚合物材料都是紫外光固化的，并在整个制造过程中表现出优异的相容性。所制备的混合波导具有良好的稳定性，采用两种材料所造成的附加损耗可以忽略不计。在实验中，我们成功地设计和制造了相对折射率对比度（$Delta $）高达7.7的混合聚合物波导%. The measured bending loss of the waveguide is about 0.1 dB/90° turning under a bending radius of 1 mm at a wavelength of 1310 nm which is critical in realizing waveguide with complex topology and ultra-high density. The core dimension of the waveguide is $4.5 times ; 4.5 ; mu $ m2 which guarantees low-loss interconnection with a typical silicon chip. The proposed method is useful in tuning the refractive index of waveguides in a wide range and the fabricated waveguide is promising for high-density optical interconnects application.
{"title":"Hybrid Polymer Waveguide With Large Refractive Index Contrast for High-Density Optical Interconnects","authors":"Xu Liu;Lin Ma;Yijun Yu;Qiancheng Yu;Jinhua Wu;Zuyuan He","doi":"10.1109/LPT.2024.3516365","DOIUrl":"https://doi.org/10.1109/LPT.2024.3516365","url":null,"abstract":"We propose polymer waveguides with large refractive index contrast by adopting organic-inorganic hybrid resin and fluorinated acrylate resin as core and cladding materials, respectively. Both types of polymer materials are UV-curable and exhibit excellent compatibility throughout the fabrication process. The fabricated hybrid waveguides show good stabilities and the additional loss due to the adoption of two types of materials is negligible. In the experiment, we succeeded in the design and fabrication of hybrid polymer waveguides with a relative refractive index contrast (\u0000<inline-formula> <tex-math>$Delta $ </tex-math></inline-formula>\u0000) as high as 7.7%. The measured bending loss of the waveguide is about 0.1 dB/90° turning under a bending radius of 1 mm at a wavelength of 1310 nm which is critical in realizing waveguide with complex topology and ultra-high density. The core dimension of the waveguide is \u0000<inline-formula> <tex-math>$4.5 times ; 4.5 ; mu $ </tex-math></inline-formula>\u0000m2 which guarantees low-loss interconnection with a typical silicon chip. The proposed method is useful in tuning the refractive index of waveguides in a wide range and the fabricated waveguide is promising for high-density optical interconnects application.","PeriodicalId":13065,"journal":{"name":"IEEE Photonics Technology Letters","volume":"37 3","pages":"125-128"},"PeriodicalIF":2.3,"publicationDate":"2024-12-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142905832","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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