Superjunction (SJ) breaks the performance limit of conventional power devices via multidimensional electrostatic engineering. Following a commercial success in Si, it has been recently demonstrated in wide bandgap (WBG) and ultra-WBG (UWBG) semiconductors, including SiC, GaN, and Ga2O3. Different from the legacy SJ design based on native p-n junctions, the vertical SJ devices reported in GaN and Ga2O3 were built on heterogenous junctions that comprise a foreign p-type material. This hetero-SJ is particularly promising for UWBG materials, in which bipolar doping is difficult. Here, we comprehensively discuss the performance limit, design, and characteristics of the emerging hetero-SJ devices. After a generic performance limit analysis, we use the UWBG Ga2O3/NiO SJ diode as an example to showcase the design guideline, fabrication, and performance of hetero-SJ devices. The emphasis is placed on a self-align process to deposit p-NiO around n-Ga2O3 pillars and the impact of the p-NiO thickness inhomogeneity on the device breakdown voltage (BV). Such process and device physics are uniquely relevant to hetero-SJ devices. The fabricated SJ diode achieves a BV over 2 kV and a specific on-resistance of 0.7 m $Omega cdot text {cm}^{{2}}$ , the tradeoff of which is among the best in kilovolt Schottky barrier diodes (SBDs). These results provide key references for the future development of hetero-SJ devices in diverse material systems.
超结（Superjunction， SJ）通过多维静电工程突破了传统功率器件的性能极限。在Si领域取得商业成功后，该技术最近又被用于宽带隙（WBG）和超宽带隙（UWBG）半导体领域，包括SiC、GaN和Ga2O3。与传统的基于原生p-n结的SJ设计不同，在GaN和Ga2O3中报道的垂直SJ器件建立在由外来p型材料组成的异质结上。这种异质sj特别有希望用于双极掺杂困难的UWBG材料。在这里，我们全面讨论了新兴的异质sj器件的性能限制、设计和特点。在一般的性能极限分析之后，我们以UWBG Ga2O3/NiO SJ二极管为例，展示了异质SJ器件的设计指南、制造和性能。重点研究了在n-Ga2O3柱周围沉积p-NiO的自对准工艺，以及p-NiO厚度不均匀性对器件击穿电压（BV）的影响。这样的过程和器件物理与异质sj器件是唯一相关的。所制备的SJ二极管的BV超过2kv，比导通电阻为0.7 m $Omega cdot text {cm}^{{2}}$，其折衷性在千伏肖特基势垒二极管（sdd）中名列前茅。这些结果为今后在不同材料体系中发展异质sj器件提供了重要参考。
{"title":"(Ultra-)Wide-Bandgap Heterogeneous Superjunction: Design, Performance Limit, and Experimental Demonstration","authors":"Yuan Qin;Yunwei Ma;Ming Xiao;Matthew Porter;Florin Udrea;Han Wang;Yuhao Zhang","doi":"10.1109/TED.2024.3493058","DOIUrl":"https://doi.org/10.1109/TED.2024.3493058","url":null,"abstract":"Superjunction (SJ) breaks the performance limit of conventional power devices via multidimensional electrostatic engineering. Following a commercial success in Si, it has been recently demonstrated in wide bandgap (WBG) and ultra-WBG (UWBG) semiconductors, including SiC, GaN, and Ga2O3. Different from the legacy SJ design based on native p-n junctions, the vertical SJ devices reported in GaN and Ga2O3 were built on heterogenous junctions that comprise a foreign p-type material. This hetero-SJ is particularly promising for UWBG materials, in which bipolar doping is difficult. Here, we comprehensively discuss the performance limit, design, and characteristics of the emerging hetero-SJ devices. After a generic performance limit analysis, we use the UWBG Ga2O3/NiO SJ diode as an example to showcase the design guideline, fabrication, and performance of hetero-SJ devices. The emphasis is placed on a self-align process to deposit p-NiO around n-Ga2O3 pillars and the impact of the p-NiO thickness inhomogeneity on the device breakdown voltage (BV). Such process and device physics are uniquely relevant to hetero-SJ devices. The fabricated SJ diode achieves a BV over 2 kV and a specific on-resistance of 0.7 m\u0000<inline-formula> <tex-math>$Omega cdot text {cm}^{{2}}$ </tex-math></inline-formula>\u0000, the tradeoff of which is among the best in kilovolt Schottky barrier diodes (SBDs). These results provide key references for the future development of hetero-SJ devices in diverse material systems.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 1","pages":"119-127"},"PeriodicalIF":2.9,"publicationDate":"2024-11-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142918141","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-11-18DOI: 10.1109/TED.2024.3492169
S. V. Samsonov;I. G. Gachev;E. I. Demikhov;V. V. Lysenko
A cusp gun has been designed for a high-power W-band gyrotron traveling-wave tube (gyro-TWT) with a helically corrugated waveguide operating at the second harmonic of the cyclotron frequency in a magnetic field of about 2 T. According to simulations performed using various software tools, the elaborated gun enables the generation of an axis-encircling electron beam with an energy of 90 keV, a pitch factor of 1.2, and a velocity spread of less than 6% at beam currents ranging from 10 to 15 A. A high beam current is achieved at a moderate cathode loading of 5 A/cm2 due to a very wide emitting ring with a radial width of 46% of its mean radius. In the case of ideal axial symmetry, the spread of transverse velocities can be as small as 2%, owing to the positive impact of space-charge forces.
尖端枪被设计为高功率w频段振动陀螺仪行波光管与螺旋波纹波导的操作(gyro-TWT)的二次谐波磁场的回旋频率约2 t .根据模拟执行使用各种软件工具,阐述了枪使的一代axis-encircling电子束能量90 keV,螺距1.2倍,低于6%的速度传播束电流从10到15。由于极宽的发射环径向宽度为其平均半径的46%，因此在5 A/cm2的中等阴极负载下实现了高光束电流。在理想轴对称的情况下，由于空间电荷力的积极影响，横向速度的传播可以小到2%。
{"title":"A Megawatt-Level Cusp Gun With Low Velocity Spread for W-Band Helical Gyro-TWT","authors":"S. V. Samsonov;I. G. Gachev;E. I. Demikhov;V. V. Lysenko","doi":"10.1109/TED.2024.3492169","DOIUrl":"https://doi.org/10.1109/TED.2024.3492169","url":null,"abstract":"A cusp gun has been designed for a high-power W-band gyrotron traveling-wave tube (gyro-TWT) with a helically corrugated waveguide operating at the second harmonic of the cyclotron frequency in a magnetic field of about 2 T. According to simulations performed using various software tools, the elaborated gun enables the generation of an axis-encircling electron beam with an energy of 90 keV, a pitch factor of 1.2, and a velocity spread of less than 6% at beam currents ranging from 10 to 15 A. A high beam current is achieved at a moderate cathode loading of 5 A/cm2 due to a very wide emitting ring with a radial width of 46% of its mean radius. In the case of ideal axial symmetry, the spread of transverse velocities can be as small as 2%, owing to the positive impact of space-charge forces.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 1","pages":"404-410"},"PeriodicalIF":2.9,"publicationDate":"2024-11-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142918290","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-11-18DOI: 10.1109/TED.2024.3492155
Sukanya Mahalik;K Akshay;Sayan Dey
An unconventional MoS2/MoO3 back-gated junctionless thin-film transistor (TFT) was proposed and experimentally demonstrated for highly selective trace-level sulfur dioxide (SO2) detection at room temperature. Few layered MoS2 nanoflakes were synthesized by a sonication-assisted liquid exfoliation technique of bulk MoS2, while MoO3 layer was formed by sustained calcination of exfoliated MoS2 flakes. The as-fabricated device was exposed to calculated amounts (680–800 ppb) of SO2 gas, and its sensing performance was studied. It was found that the response of the device can be enhanced by tuning the gate to source voltage, ${V} _{text {GS}}$ . A physics-based model was derived to predict the effect of ${V} _{text {GS}}$ on the output characteristics of the device and was validated by well-calibrated TCAD simulation deck. For 800-ppb SO2, the device showed the maximum ${R} =1.316$ with response ( ${t} _{r}$ ) and recovery ( ${t} _{s}$ ) times of 229 and 112 s, respectively, under an optimized ${V} _{text {GS}} =5$ V at ${V} _{text {DS}} =10$ V. It was found to be highly selective toward SO2 over other chemically comparable gases (i.e., NO2, NO, Ethanol, 2-propanol, CO2, and so on) under the same bias voltages with good stability and reproducibility. The ultrahigh selectivity was observed to be specific toward the gases showing redox properties in comparison with purely oxidizing and reducing ones, and the physics of the same was adequately explained through the model. Hence, the proposed device could be a viable alternative to its conventional counterparts as an efficient CMOS integrable ultrasensitive SO2 sensor.
{"title":"A 2D-MoS2-Based Thin-Film Transistor for Trace-Level SO2 Monitoring","authors":"Sukanya Mahalik;K Akshay;Sayan Dey","doi":"10.1109/TED.2024.3492155","DOIUrl":"https://doi.org/10.1109/TED.2024.3492155","url":null,"abstract":"An unconventional MoS2/MoO3 back-gated junctionless thin-film transistor (TFT) was proposed and experimentally demonstrated for highly selective trace-level sulfur dioxide (SO2) detection at room temperature. Few layered MoS2 nanoflakes were synthesized by a sonication-assisted liquid exfoliation technique of bulk MoS2, while MoO3 layer was formed by sustained calcination of exfoliated MoS2 flakes. The as-fabricated device was exposed to calculated amounts (680–800 ppb) of SO2 gas, and its sensing performance was studied. It was found that the response of the device can be enhanced by tuning the gate to source voltage, \u0000<inline-formula> <tex-math>${V} _{text {GS}}$ </tex-math></inline-formula>\u0000. A physics-based model was derived to predict the effect of \u0000<inline-formula> <tex-math>${V} _{text {GS}}$ </tex-math></inline-formula>\u0000 on the output characteristics of the device and was validated by well-calibrated TCAD simulation deck. For 800-ppb SO2, the device showed the maximum \u0000<inline-formula> <tex-math>${R} =1.316$ </tex-math></inline-formula>\u0000 with response (\u0000<inline-formula> <tex-math>${t} _{r}$ </tex-math></inline-formula>\u0000) and recovery (\u0000<inline-formula> <tex-math>${t} _{s}$ </tex-math></inline-formula>\u0000) times of 229 and 112 s, respectively, under an optimized \u0000<inline-formula> <tex-math>${V} _{text {GS}} =5$ </tex-math></inline-formula>\u0000 V at \u0000<inline-formula> <tex-math>${V} _{text {DS}} =10$ </tex-math></inline-formula>\u0000 V. It was found to be highly selective toward SO2 over other chemically comparable gases (i.e., NO2, NO, Ethanol, 2-propanol, CO2, and so on) under the same bias voltages with good stability and reproducibility. The ultrahigh selectivity was observed to be specific toward the gases showing redox properties in comparison with purely oxidizing and reducing ones, and the physics of the same was adequately explained through the model. Hence, the proposed device could be a viable alternative to its conventional counterparts as an efficient CMOS integrable ultrasensitive SO2 sensor.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 1","pages":"390-396"},"PeriodicalIF":2.9,"publicationDate":"2024-11-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142918283","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-11-15DOI: 10.1109/TED.2024.3493062
Ningyu Luo;Huiqing Wen;Wen Liu;Lin Jiang
The study on the junction temperature and thermal resistance of gallium nitride (GaN) high electron mobility transistors (HEMTs) becomes essential in order to ensure high operating reliability. Among different categories of thermal resistance measurement methods, the temperature-sensitive electrical parameter (TSEP) method exhibits unique advantages in terms of online implementation, accuracy, and applicability. After reviewing current TSEP methods for GaN HEMTs, this article proposes a high-accuracy thermal resistance measurement method for GaN HEMTs based on a heating power modulation strategy, which is named the harmonic pulsewidth subthreshold (HPWS) method. Specifically, the sensitive linear correlation between the subthreshold swing (SS) of GaN HEMTs and temperature will be utilized, and the turn-off transients of the heating power signal will be sampled to extract the thermal resistance through frequency-domain scanning of the heating signal modulation. Thus, the proposed HPWS method can filter out negative effects caused by case temperature fluctuations and the measurement impulse signal delay, which can minimize possible errors caused by nonlinearity or low sensitivity. An experimental comparison of the proposed method with two classical methods was conducted. Main experimental comparison results of the relationship between GaN HEMT thermal resistance and drain current were also introduced. The experimental results indicated that the differences between the proposed method and two classical methods at all various drain current conditions were less than 2%. Besides, a systematic analysis was conducted on main factors determining the accuracy of the thermal resistance measurement for GaN HEMTs.
{"title":"High-Accuracy Thermal Resistance Measurement Method for GaN HEMTs Based on Harmonic Pulsewidth Subthreshold","authors":"Ningyu Luo;Huiqing Wen;Wen Liu;Lin Jiang","doi":"10.1109/TED.2024.3493062","DOIUrl":"https://doi.org/10.1109/TED.2024.3493062","url":null,"abstract":"The study on the junction temperature and thermal resistance of gallium nitride (GaN) high electron mobility transistors (HEMTs) becomes essential in order to ensure high operating reliability. Among different categories of thermal resistance measurement methods, the temperature-sensitive electrical parameter (TSEP) method exhibits unique advantages in terms of online implementation, accuracy, and applicability. After reviewing current TSEP methods for GaN HEMTs, this article proposes a high-accuracy thermal resistance measurement method for GaN HEMTs based on a heating power modulation strategy, which is named the harmonic pulsewidth subthreshold (HPWS) method. Specifically, the sensitive linear correlation between the subthreshold swing (SS) of GaN HEMTs and temperature will be utilized, and the turn-off transients of the heating power signal will be sampled to extract the thermal resistance through frequency-domain scanning of the heating signal modulation. Thus, the proposed HPWS method can filter out negative effects caused by case temperature fluctuations and the measurement impulse signal delay, which can minimize possible errors caused by nonlinearity or low sensitivity. An experimental comparison of the proposed method with two classical methods was conducted. Main experimental comparison results of the relationship between GaN HEMT thermal resistance and drain current were also introduced. The experimental results indicated that the differences between the proposed method and two classical methods at all various drain current conditions were less than 2%. Besides, a systematic analysis was conducted on main factors determining the accuracy of the thermal resistance measurement for GaN HEMTs.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 1","pages":"186-192"},"PeriodicalIF":2.9,"publicationDate":"2024-11-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142925395","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In this work, we propose a gate structure to enhance the memory window (MW) of Si-channel Hf0.5Zr0.5O2 FeFETs. We achieve an MW of 10.04 V by inserting an Al2O3/HfO2/Al2O3 (AHA) top dielectric interlayer between the ferroelectric Hf0.5Zr0.5O2 layer and the metal gate, where the gate-stack thickness is 14.8 nm. The physical origin is that the Al2O3/HfO2, HfO2/Al2O3, and Al2O3/Hf0.5Zr0.5O2 interfaces can trap charges from the metal gate, contributing to the MW enhancement. This AHA top dielectric multilayer effectively suppresses charge loss compared with a single Al2O3 top dielectric interlayer. Moreover, the de-trapping of charges injected from the metal gate is the primary factor for the degradation of the MW in this structure. Our work provides a guide for improving the MW of FeFET.
{"title":"Improvement of Memory Window of Silicon Channel Hf₀.₅Zr₀.₅O₂ FeFET by Inserting Al₂O₃/HfO₂/Al₂O₃ Top Interlayer","authors":"Runhao Han;Tao Hu;Jia Yang;Mingkai Bai;Yajing Ding;Xianzhou Shao;Saifei Dai;Xiaoqing Sun;Junshuai Chai;Hao Xu;Kai Han;Xiaolei Wang;Wenwu Wang;Tianchun Ye","doi":"10.1109/TED.2024.3489595","DOIUrl":"https://doi.org/10.1109/TED.2024.3489595","url":null,"abstract":"In this work, we propose a gate structure to enhance the memory window (MW) of Si-channel Hf0.5Zr0.5O2 FeFETs. We achieve an MW of 10.04 V by inserting an Al2O3/HfO2/Al2O3 (AHA) top dielectric interlayer between the ferroelectric Hf0.5Zr0.5O2 layer and the metal gate, where the gate-stack thickness is 14.8 nm. The physical origin is that the Al2O3/HfO2, HfO2/Al2O3, and Al2O3/Hf0.5Zr0.5O2 interfaces can trap charges from the metal gate, contributing to the MW enhancement. This AHA top dielectric multilayer effectively suppresses charge loss compared with a single Al2O3 top dielectric interlayer. Moreover, the de-trapping of charges injected from the metal gate is the primary factor for the degradation of the MW in this structure. Our work provides a guide for improving the MW of FeFET.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"71 12","pages":"7489-7494"},"PeriodicalIF":2.9,"publicationDate":"2024-11-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142777563","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-11-14DOI: 10.1109/TED.2024.3493068
Xiaoyu Pan;Jinxin Zhang;Xin Wang;Fei Guo;Dongning Hao;Hongxia Guo;Yahui Feng;Yijun Cui;Weiqiang Liu
This article presents a comprehensive study of single-event effects (SEEs) in a three-stage Silicon Germanium heterojunction bipolar transistors (SiGe HBTs)-based ultrawideband low-noise amplifier (UWB LNA) under heavy ion and pulsed laser irradiation. The study aims to evaluate the circuit’s susceptibility to radiation-induced transients and compare the characteristics of single-event transients (SETs) induced by different irradiation methods. Utilizing single-photon absorption (SPA) laser microbeam testing, SET waveforms were captured at various amplifier stages, revealing stage-specific, frequency-dependent responses. This approach provided a novel method for localizing SET generation, which was validated by subsequent heavy-ion broad beam experiments. Joint device- and circuit-level simulations were performed to investigate the underlying mechanisms, offering insights into the impact of interstage compensation on performance degradation and uncovering SET propagation dynamics within the three-stage UWB LNA. The results show that combining heavy ion and pulsed laser irradiation enables a more comprehensive understanding of SEE behavior in UWB LNAs, offering valuable implications for the design of radiation-hardened circuits in space applications. The experimental and simulation methods outlined in this article can be extended to SET studies in other RF integrated circuits (RF ICs).
{"title":"Comparison of Single-Event Transient Under Heavy Ion and Pulsed Laser Irradiation in SiGe HBT Ultrawideband LNA","authors":"Xiaoyu Pan;Jinxin Zhang;Xin Wang;Fei Guo;Dongning Hao;Hongxia Guo;Yahui Feng;Yijun Cui;Weiqiang Liu","doi":"10.1109/TED.2024.3493068","DOIUrl":"https://doi.org/10.1109/TED.2024.3493068","url":null,"abstract":"This article presents a comprehensive study of single-event effects (SEEs) in a three-stage Silicon Germanium heterojunction bipolar transistors (SiGe HBTs)-based ultrawideband low-noise amplifier (UWB LNA) under heavy ion and pulsed laser irradiation. The study aims to evaluate the circuit’s susceptibility to radiation-induced transients and compare the characteristics of single-event transients (SETs) induced by different irradiation methods. Utilizing single-photon absorption (SPA) laser microbeam testing, SET waveforms were captured at various amplifier stages, revealing stage-specific, frequency-dependent responses. This approach provided a novel method for localizing SET generation, which was validated by subsequent heavy-ion broad beam experiments. Joint device- and circuit-level simulations were performed to investigate the underlying mechanisms, offering insights into the impact of interstage compensation on performance degradation and uncovering SET propagation dynamics within the three-stage UWB LNA. The results show that combining heavy ion and pulsed laser irradiation enables a more comprehensive understanding of SEE behavior in UWB LNAs, offering valuable implications for the design of radiation-hardened circuits in space applications. The experimental and simulation methods outlined in this article can be extended to SET studies in other RF integrated circuits (RF ICs).","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 1","pages":"4-11"},"PeriodicalIF":2.9,"publicationDate":"2024-11-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142918437","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-11-14DOI: 10.1109/TED.2024.3493061
Long Hu;Li Zhu;Xiangrui Bu;Jia Huang;Qiqi Li;Xin Li;Weihua Liu;Chuanyu Han
A novel photoconductive semiconductor switch (PCSS) with a field-shielding conductor was designed to homogenize the electric field at the electrode edge, thereby enabling reliable triggering of a high-voltage gas switch. The structure of the field-shielding conductor incorporated PCSS (Con-PCSS) was optimized by simulating the electrostatic field. The results indicated that a significant electric field enhancement appeared at the electrode edge of the pristine PCSS (P-PCSS), causing device failure, whereas the electric field distribution in the Con-PCSS was relatively uniform. Compared to the P-PCSS, the Con-PCSS demonstrated superior performance with a higher withstanding voltage and lower dark current. It was found experimentally that the Con-PCSS exhibited nearly stable current and weak damage over 10 000 shots, whereas the P-PCSS exhibited current decay and severe damage after only 4000 shots. Additionally, a ±80-kV gas switch integrated with the Con-PCSS was successfully triggered by a low-energy fiber, showing a stable switching delay time over 8000 continuous shots.
{"title":"Design of a GaAs Photoconductive Semiconductor Switch for Reliable Triggering of a Gas Switch","authors":"Long Hu;Li Zhu;Xiangrui Bu;Jia Huang;Qiqi Li;Xin Li;Weihua Liu;Chuanyu Han","doi":"10.1109/TED.2024.3493061","DOIUrl":"https://doi.org/10.1109/TED.2024.3493061","url":null,"abstract":"A novel photoconductive semiconductor switch (PCSS) with a field-shielding conductor was designed to homogenize the electric field at the electrode edge, thereby enabling reliable triggering of a high-voltage gas switch. The structure of the field-shielding conductor incorporated PCSS (Con-PCSS) was optimized by simulating the electrostatic field. The results indicated that a significant electric field enhancement appeared at the electrode edge of the pristine PCSS (P-PCSS), causing device failure, whereas the electric field distribution in the Con-PCSS was relatively uniform. Compared to the P-PCSS, the Con-PCSS demonstrated superior performance with a higher withstanding voltage and lower dark current. It was found experimentally that the Con-PCSS exhibited nearly stable current and weak damage over 10 000 shots, whereas the P-PCSS exhibited current decay and severe damage after only 4000 shots. Additionally, a ±80-kV gas switch integrated with the Con-PCSS was successfully triggered by a low-energy fiber, showing a stable switching delay time over 8000 continuous shots.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 1","pages":"104-110"},"PeriodicalIF":2.9,"publicationDate":"2024-11-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142918257","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Four-terminal indirectly heated phase-change switches (IPCSs) have emerged as excellent candidates for radio-frequency integrated circuit (RFIC) applications due to their state-of-the-art cutoff frequency, nonvolatility, CMOS compatibility, and exceptional linearity. However, IPCS performance is limited by relatively low-power handling capabilities in the off-state, limited by the Ovonic threshold switching (OTS) phenomenon. In this article, we propose the use of a quad configuration consisting of two series-connected IPCS in parallel with another two series-connected IPCS. This series connection increases the effective threshold voltage, thereby enhancing power handling compared to a single device. We experimentally demonstrate the implementation of this quad configuration in asymmetric and symmetric single-pole double-throw (SPDT) switches. Fabricated using an in-house process, these designs achieve an insertion loss (IL) below 0.8 dB and isolation higher than 17 dB within the dc-15 GHz frequency band. Furthermore, we explore techniques, such as reducing the probing pads and series-shunt configuration, to boost isolation beyond 30 dB. Thanks to the quad configuration, the threshold voltage increases from 5 to 13.5 V, predicatively enabling power handling above 35 dBm.
{"title":"Asymmetric and Symmetric Single-Pole Double-Throw With Improved Power Handling Using Indirectly Heated Phase-Change Switches","authors":"Nicolás Wainstein;Ami Orren;Rivka-Galya Nir-Harwood;Eilam Yalon;Shahar Kvatinsky","doi":"10.1109/TED.2024.3492136","DOIUrl":"https://doi.org/10.1109/TED.2024.3492136","url":null,"abstract":"Four-terminal indirectly heated phase-change switches (IPCSs) have emerged as excellent candidates for radio-frequency integrated circuit (RFIC) applications due to their state-of-the-art cutoff frequency, nonvolatility, CMOS compatibility, and exceptional linearity. However, IPCS performance is limited by relatively low-power handling capabilities in the off-state, limited by the Ovonic threshold switching (OTS) phenomenon. In this article, we propose the use of a quad configuration consisting of two series-connected IPCS in parallel with another two series-connected IPCS. This series connection increases the effective threshold voltage, thereby enhancing power handling compared to a single device. We experimentally demonstrate the implementation of this quad configuration in asymmetric and symmetric single-pole double-throw (SPDT) switches. Fabricated using an in-house process, these designs achieve an insertion loss (IL) below 0.8 dB and isolation higher than 17 dB within the dc-15 GHz frequency band. Furthermore, we explore techniques, such as reducing the probing pads and series-shunt configuration, to boost isolation beyond 30 dB. Thanks to the quad configuration, the threshold voltage increases from 5 to 13.5 V, predicatively enabling power handling above 35 dBm.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 1","pages":"344-349"},"PeriodicalIF":2.9,"publicationDate":"2024-11-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142918509","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-11-14DOI: 10.1109/TED.2024.3492146
Zulong Chen;Lei Wang;Junpu Ling;Lili Song;Juntao He;Jiawen Li
A novel method to realize modulated emission and transmission in the diode region is proposed to improve beam-wave interaction for high output power and conversion efficiency. Microwave energy leaked into the diode is utilized to form a modulated electromagnetic field to modulate the emission and transmission of the electron beam. This mechanism is conducive to achieving better modulation effects of electron beam and suppressing competitive modes through the resonant frequency component of initial current modulation. A low magnetic field (0.7 T) Q-band relativistic coaxial transit time oscillator (RCTTO) is designed with this mechanism to obtain a microwave power of 337 MW, under the diode voltage of 396 kV and current of 1.98 kA. Compared with an RCTTO with a normal emission mechanism, the conversion efficiency increases from 21.3% to 43%.
{"title":"Application of Electron Beam Modulated Emission in a Novel Low Magnetic Field, High-Efficiency Q-Band Transit-Time Oscillator","authors":"Zulong Chen;Lei Wang;Junpu Ling;Lili Song;Juntao He;Jiawen Li","doi":"10.1109/TED.2024.3492146","DOIUrl":"https://doi.org/10.1109/TED.2024.3492146","url":null,"abstract":"A novel method to realize modulated emission and transmission in the diode region is proposed to improve beam-wave interaction for high output power and conversion efficiency. Microwave energy leaked into the diode is utilized to form a modulated electromagnetic field to modulate the emission and transmission of the electron beam. This mechanism is conducive to achieving better modulation effects of electron beam and suppressing competitive modes through the resonant frequency component of initial current modulation. A low magnetic field (0.7 T) Q-band relativistic coaxial transit time oscillator (RCTTO) is designed with this mechanism to obtain a microwave power of 337 MW, under the diode voltage of 396 kV and current of 1.98 kA. Compared with an RCTTO with a normal emission mechanism, the conversion efficiency increases from 21.3% to 43%.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 1","pages":"411-416"},"PeriodicalIF":2.9,"publicationDate":"2024-11-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142918134","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-11-14DOI: 10.1109/TED.2024.3493854
Guangxi Fan;Tianliang Ma;Xuguang Sun;Leilai Shao;Kain Lu Low
An innovative framework that leverages artificial intelligence (AI) and graph representation for semiconductor device encoding in TCAD device simulation is proposed. A graph-based universal encoding scheme is presented that incorporates material-level and device-level embeddings, along with a novel spatial relationship embedding inspired by finite element meshing interpolation operations. This encoding approach seamlessly accommodates the unstructured mesh features of TCAD simulator, providing a standardized method for device representation, akin to modeling transistor as a graph, reminiscent of the unified representations commonly used in computer vision (CV) and natural language processing (NLP). The framework enables comprehensive data-driven modeling by employing a novel graph attention network with skip connections, referred to as RelGAT. This network is used to construct an end-to-end surrogate model, performing node-level potential emulation and graph-level current-voltage (I–V) prediction. Furthermore, this framework is effectively integrated into a design technology co-optimization (DTCO) flow for carbon nanotube (CNT)-based emerging technology through transfer learning, facilitating early-stage evaluations of new processes and reducing the computational cost. Comprehensive technical details based on the device simulator Sentaurus TCAD are presented, empowering researchers to adopt the proposed AI-driven electronic design automation (EDA) solution at the device level.
{"title":"Graph Attention Network-Based Unified TCAD Modeling Enabling Fast Design Technology Co-Optimization Through Transfer Learning","authors":"Guangxi Fan;Tianliang Ma;Xuguang Sun;Leilai Shao;Kain Lu Low","doi":"10.1109/TED.2024.3493854","DOIUrl":"https://doi.org/10.1109/TED.2024.3493854","url":null,"abstract":"An innovative framework that leverages artificial intelligence (AI) and graph representation for semiconductor device encoding in TCAD device simulation is proposed. A graph-based universal encoding scheme is presented that incorporates material-level and device-level embeddings, along with a novel spatial relationship embedding inspired by finite element meshing interpolation operations. This encoding approach seamlessly accommodates the unstructured mesh features of TCAD simulator, providing a standardized method for device representation, akin to modeling transistor as a graph, reminiscent of the unified representations commonly used in computer vision (CV) and natural language processing (NLP). The framework enables comprehensive data-driven modeling by employing a novel graph attention network with skip connections, referred to as RelGAT. This network is used to construct an end-to-end surrogate model, performing node-level potential emulation and graph-level current-voltage (I–V) prediction. Furthermore, this framework is effectively integrated into a design technology co-optimization (DTCO) flow for carbon nanotube (CNT)-based emerging technology through transfer learning, facilitating early-stage evaluations of new processes and reducing the computational cost. Comprehensive technical details based on the device simulator Sentaurus TCAD are presented, empowering researchers to adopt the proposed AI-driven electronic design automation (EDA) solution at the device level.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 1","pages":"474-481"},"PeriodicalIF":2.9,"publicationDate":"2024-11-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142918101","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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