In this study, we investigated the impact of unstable and stable interface trap charges ( <inline-formula> <tex-math>${Q}_{text {it}}text {)}$ </tex-math></inline-formula> on <inline-formula> <tex-math>${P}_{text {S}}$ </tex-math></inline-formula> switching in metal-ferroelectric–insulator-Si (MFIS) ferroelectric field-effect transistors (FeFETs), which vary with the thickness of the insulator. We also examine how these variations ultimately affect the various performance metrics of MFIS FeFETs. To achieve this, we varied the thickness of the insulator ( <inline-formula> <tex-math>${t}_{text {IL}}text {)}$ </tex-math></inline-formula> in MFIS FeFETs to 1.5, 2.0, and 2.5 nm, thereby controlling the amount of <inline-formula> <tex-math>${Q}_{text {it}}$ </tex-math></inline-formula> injected from the channel into the ferroelectric (FE)/insulator interface. As <inline-formula> <tex-math>${t}_{text {IL}}$ </tex-math></inline-formula> decreases, the amount of <inline-formula> <tex-math>${Q}_{text {it}}$ </tex-math></inline-formula> increases, which amplifies the electric field across the FE layer. As a result, <inline-formula> <tex-math>${P}_{text {S}}$ </tex-math></inline-formula> switching enhances, and consequently, the MW characteristics of MFIS FeFETs improve. Furthermore, to analyze this in detail, we employed <inline-formula> <tex-math>${P}_{text {S}}$ </tex-math></inline-formula> – <inline-formula> <tex-math>${Q}_{text {it}}$ </tex-math></inline-formula> measurements on MFIS FeFETs to simultaneously extract unstable and stable <inline-formula> <tex-math>${Q}_{text {it}}$ </tex-math></inline-formula> as well as <inline-formula> <tex-math>${P}_{text {S}}$ </tex-math></inline-formula> and MW. The results show that as <inline-formula> <tex-math>${t}_{text {IL}}$ </tex-math></inline-formula> increases to 1.5, 2.0, and 2.5 nm, <inline-formula> <tex-math>${Q}_{text {it}}$ </tex-math></inline-formula> during program/erase (PGM/ERS) operations decreases to 100%, 61%, and 54%, respectively. This leads to a corresponding decrease in <inline-formula> <tex-math>${P}_{text {S}}$ </tex-math></inline-formula> to 100%, 59%, and 52%. Additionally, after sufficient delay following the PGM/ERS operations, we observe that the proportion stable <inline-formula> <tex-math>${Q}_{text {it}}$ </tex-math></inline-formula> compared to <inline-formula> <tex-math>${P}_{text {S}}$ </tex-math></inline-formula> is 91%, regardless to <inline-formula> <tex-math>${t}_{text {IL}}$ </tex-math></inline-formula> and the remaining 9% of <inline-formula> <tex-math>${P}_{text {S}}$ </tex-math></inline-formula> contributes to the MW property. Consequently, as <inline-formula> <tex-math>${t}_{text {IL}}$ </tex-math></inline-formula> increases to 1.5, 2.0, and 2.5 nm, the net charge decreases to 100%, 61%, and 54%, resulting in MW values of 1.85, 1.05, and 0.85 V, respectively. Finally, we analyzed the impact of <inline-formula> <tex-math>${Q}_{text {it}}
{"title":"Experimental Analysis on the Interaction Between Interface Trap Charges and Polarization on the Memory Window of Metal-Ferroelectric–Insulator-Si (MFIS) FeFET","authors":"Giuk Kim;Hyojun Choi;Sangho Lee;Hunbeom Shin;Sangmok Lee;Yunseok Nam;Hyunjun Kang;Seokjoong Shin;Hoon Kim;Youngjin Lim;Kang Kim;Il-Kwon Oh;Sang-Hee Ko Park;Jinho Ahn;Sanghun Jeon","doi":"10.1109/TED.2024.3442163","DOIUrl":"https://doi.org/10.1109/TED.2024.3442163","url":null,"abstract":"In this study, we investigated the impact of unstable and stable interface trap charges (\u0000<inline-formula> <tex-math>${Q}_{text {it}}text {)}$ </tex-math></inline-formula>\u0000 on \u0000<inline-formula> <tex-math>${P}_{text {S}}$ </tex-math></inline-formula>\u0000 switching in metal-ferroelectric–insulator-Si (MFIS) ferroelectric field-effect transistors (FeFETs), which vary with the thickness of the insulator. We also examine how these variations ultimately affect the various performance metrics of MFIS FeFETs. To achieve this, we varied the thickness of the insulator (\u0000<inline-formula> <tex-math>${t}_{text {IL}}text {)}$ </tex-math></inline-formula>\u0000 in MFIS FeFETs to 1.5, 2.0, and 2.5 nm, thereby controlling the amount of \u0000<inline-formula> <tex-math>${Q}_{text {it}}$ </tex-math></inline-formula>\u0000 injected from the channel into the ferroelectric (FE)/insulator interface. As \u0000<inline-formula> <tex-math>${t}_{text {IL}}$ </tex-math></inline-formula>\u0000 decreases, the amount of \u0000<inline-formula> <tex-math>${Q}_{text {it}}$ </tex-math></inline-formula>\u0000 increases, which amplifies the electric field across the FE layer. As a result, \u0000<inline-formula> <tex-math>${P}_{text {S}}$ </tex-math></inline-formula>\u0000 switching enhances, and consequently, the MW characteristics of MFIS FeFETs improve. Furthermore, to analyze this in detail, we employed \u0000<inline-formula> <tex-math>${P}_{text {S}}$ </tex-math></inline-formula>\u0000–\u0000<inline-formula> <tex-math>${Q}_{text {it}}$ </tex-math></inline-formula>\u0000 measurements on MFIS FeFETs to simultaneously extract unstable and stable \u0000<inline-formula> <tex-math>${Q}_{text {it}}$ </tex-math></inline-formula>\u0000 as well as \u0000<inline-formula> <tex-math>${P}_{text {S}}$ </tex-math></inline-formula>\u0000 and MW. The results show that as \u0000<inline-formula> <tex-math>${t}_{text {IL}}$ </tex-math></inline-formula>\u0000 increases to 1.5, 2.0, and 2.5 nm, \u0000<inline-formula> <tex-math>${Q}_{text {it}}$ </tex-math></inline-formula>\u0000 during program/erase (PGM/ERS) operations decreases to 100%, 61%, and 54%, respectively. This leads to a corresponding decrease in \u0000<inline-formula> <tex-math>${P}_{text {S}}$ </tex-math></inline-formula>\u0000 to 100%, 59%, and 52%. Additionally, after sufficient delay following the PGM/ERS operations, we observe that the proportion stable \u0000<inline-formula> <tex-math>${Q}_{text {it}}$ </tex-math></inline-formula>\u0000 compared to \u0000<inline-formula> <tex-math>${P}_{text {S}}$ </tex-math></inline-formula>\u0000 is 91%, regardless to \u0000<inline-formula> <tex-math>${t}_{text {IL}}$ </tex-math></inline-formula>\u0000 and the remaining 9% of \u0000<inline-formula> <tex-math>${P}_{text {S}}$ </tex-math></inline-formula>\u0000 contributes to the MW property. Consequently, as \u0000<inline-formula> <tex-math>${t}_{text {IL}}$ </tex-math></inline-formula>\u0000 increases to 1.5, 2.0, and 2.5 nm, the net charge decreases to 100%, 61%, and 54%, resulting in MW values of 1.85, 1.05, and 0.85 V, respectively. Finally, we analyzed the impact of \u0000<inline-formula> <tex-math>${Q}_{text {it}}","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":null,"pages":null},"PeriodicalIF":2.9,"publicationDate":"2024-09-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142518242","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-24DOI: 10.1109/TED.2024.3463273
{"title":"Bridging the Data Gap in Photovoltaics with Synthetic Data Generation","authors":"","doi":"10.1109/TED.2024.3463273","DOIUrl":"https://doi.org/10.1109/TED.2024.3463273","url":null,"abstract":"","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":null,"pages":null},"PeriodicalIF":2.9,"publicationDate":"2024-09-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10691388","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142316348","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-24DOI: 10.1109/TED.2024.3463279
{"title":"Blank Page","authors":"","doi":"10.1109/TED.2024.3463279","DOIUrl":"https://doi.org/10.1109/TED.2024.3463279","url":null,"abstract":"","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":null,"pages":null},"PeriodicalIF":2.9,"publicationDate":"2024-09-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10691649","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142316374","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Visible light communication (VLC) based on micro light-emitting diodes (micro-LEDs) offers energy-efficient methods for explosive data transmission. However, the severe quantum-confined stark effect (QCSE) and carrier localization make it challenging for micro-LEDs to achieve both high modulation bandwidth and high external quantum efficiency (EQE). Herein, GaN-based freestanding micro-LEDs with varying quantum barrier (QB) thicknesses were designed and fabricated. The thinner QBs effectively reduce the QCSE and improve carrier transport, resulting in high modulation bandwidth and less efficiency droop. Homoepitaxial growth of micro-LEDs gives birth to further improved modulation bandwidth and optical power due to lower defect density and improved thermal dispassion. The −3 dB bandwidths of the 10 and $20~mu $ m-diameter freestanding micro-LEDs exceed 1.03 GHz and 823 MHz, respectively. A high optical power of 5.54 mW and a data rate of 4.08 Gb/s, while maintaining a relatively high EQE of 4.17%, were achieved on $20~mu $ m-diameter devices. The proposed methods systematically improve the modulation bandwidth and luminescence efficiency, demonstrating the significant potential for free-space VLC.
基于微型发光二极管（micro-LED）的可见光通信（VLC）为爆炸性数据传输提供了节能方法。然而，严重的量子约束效应（QCSE）和载流子局域化使得微型发光二极管在实现高调制带宽和高外部量子效率（EQE）方面面临挑战。在此，我们设计并制造了具有不同量子势垒（QB）厚度的氮化镓基独立微型 LED。较薄的量子势垒可有效降低 QCSE 并改善载流子传输，从而实现较高的调制带宽和较低的效率下降。由于缺陷密度更低，热分散性更好，微型 LED 的同向外延生长进一步提高了调制带宽和光功率。直径分别为 10 和 20~mu $ m 的独立式微型发光二极管的 -3 dB 带宽分别超过了 1.03 GHz 和 823 MHz。在直径为 20~mu $ m 的器件上实现了 5.54 mW 的高光功率和 4.08 Gb/s 的数据传输速率，同时保持了 4.17% 的相对较高的 EQE。所提出的方法系统地提高了调制带宽和发光效率，证明了自由空间 VLC 的巨大潜力。
{"title":"GaN-Based Freestanding Micro-LEDs With GHz Bandwidth and Low Efficiency Droop for Visible Light Communication","authors":"Jinpeng Huang;Guobin Wang;Handan Xu;Feifan Xu;Ting Zhi;Wenjuan Chen;Yimeng Sang;Dongqi Zhang;Junchi Yu;Honghui He;Ke Xu;Pengfei Tian;Tao Tao;Bin Liu;Rong Zhang","doi":"10.1109/TED.2024.3456770","DOIUrl":"https://doi.org/10.1109/TED.2024.3456770","url":null,"abstract":"Visible light communication (VLC) based on micro light-emitting diodes (micro-LEDs) offers energy-efficient methods for explosive data transmission. However, the severe quantum-confined stark effect (QCSE) and carrier localization make it challenging for micro-LEDs to achieve both high modulation bandwidth and high external quantum efficiency (EQE). Herein, GaN-based freestanding micro-LEDs with varying quantum barrier (QB) thicknesses were designed and fabricated. The thinner QBs effectively reduce the QCSE and improve carrier transport, resulting in high modulation bandwidth and less efficiency droop. Homoepitaxial growth of micro-LEDs gives birth to further improved modulation bandwidth and optical power due to lower defect density and improved thermal dispassion. The −3 dB bandwidths of the 10 and \u0000<inline-formula> <tex-math>$20~mu $ </tex-math></inline-formula>\u0000m-diameter freestanding micro-LEDs exceed 1.03 GHz and 823 MHz, respectively. A high optical power of 5.54 mW and a data rate of 4.08 Gb/s, while maintaining a relatively high EQE of 4.17%, were achieved on \u0000<inline-formula> <tex-math>$20~mu $ </tex-math></inline-formula>\u0000m-diameter devices. The proposed methods systematically improve the modulation bandwidth and luminescence efficiency, demonstrating the significant potential for free-space VLC.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":null,"pages":null},"PeriodicalIF":2.9,"publicationDate":"2024-09-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142518243","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The mobility-degradation-based model for the drain-to-source or output resistance of a graphene field-effect transistor (GFET) is linearized here using a Taylor series approximation. This simplification is shown to be valid from the magnitudes of the gate voltage not significantly higher than the Dirac voltage, and it enables the analytical determination of the transconductance parameter, the voltage related to residual charges, and a bias-independent series resistance of the GFET. Furthermore, a continuous representation of the device’s static response is achieved when substituting the extracted parameters into the model, regardless the transfer characteristic symmetry with respect to the Dirac voltage.
{"title":"A Taylor Series Approximation Model for Characterizing the Output Resistance of a GFET","authors":"Xiomara Ribero-Figueroa;Anibal Pacheco-Sanchez;Tzu-Jung Huang;David Jiménez;Ivan Puchades;Reydezel Torres-Torres","doi":"10.1109/TED.2024.3458928","DOIUrl":"https://doi.org/10.1109/TED.2024.3458928","url":null,"abstract":"The mobility-degradation-based model for the drain-to-source or output resistance of a graphene field-effect transistor (GFET) is linearized here using a Taylor series approximation. This simplification is shown to be valid from the magnitudes of the gate voltage not significantly higher than the Dirac voltage, and it enables the analytical determination of the transconductance parameter, the voltage related to residual charges, and a bias-independent series resistance of the GFET. Furthermore, a continuous representation of the device’s static response is achieved when substituting the extracted parameters into the model, regardless the transfer characteristic symmetry with respect to the Dirac voltage.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":null,"pages":null},"PeriodicalIF":2.9,"publicationDate":"2024-09-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142517924","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-24DOI: 10.1109/TED.2024.3463277
{"title":"IEEE Transactions on Electron Devices Information for Authors","authors":"","doi":"10.1109/TED.2024.3463277","DOIUrl":"https://doi.org/10.1109/TED.2024.3463277","url":null,"abstract":"","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":null,"pages":null},"PeriodicalIF":2.9,"publicationDate":"2024-09-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10691646","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142316477","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Narrowband photodetectors play a vital role in imaging and sensing applications. Due to exceptional optoelectronic properties and tunable bandgap, perovskites are highly suitable for realizing narrowband photodetection. In this work, a narrow dual-band photodetector based on lead-free perovskite single crystal (PSC) Cs2AgBiBr6 is fabricated. The detector showed a narrowband response spectrum with dual bands with a peak response at 530 and 590 nm. A detectivity of 109 Jones with a full-width half maximum (FWHM) of 42 nm is achieved in both bands. The detector showed a rise time ( ${t}_{text {r}}$ ) of 92 ms and a fall time ( ${t}_{text {f}}$ ) of 271 ms under 530 nm illumination, along with a stable performance up to 25 days in ambient conditions. This attempt demonstrates a stable narrow dual-band photodetection using a lead-free Cs2AgBiBr6 double PSC for multispectral imaging applications.
{"title":"Narrow Dual-Band Photodetector Based on Cs2AgBiBr6 Lead-Free Double Perovskite Single Crystal","authors":"Sampati Rao Sridhar;Naveen Kumar Tailor;Soumitra Satapathi;Brijesh Kumar","doi":"10.1109/TED.2024.3457548","DOIUrl":"https://doi.org/10.1109/TED.2024.3457548","url":null,"abstract":"Narrowband photodetectors play a vital role in imaging and sensing applications. Due to exceptional optoelectronic properties and tunable bandgap, perovskites are highly suitable for realizing narrowband photodetection. In this work, a narrow dual-band photodetector based on lead-free perovskite single crystal (PSC) Cs2AgBiBr6 is fabricated. The detector showed a narrowband response spectrum with dual bands with a peak response at 530 and 590 nm. A detectivity of 109 Jones with a full-width half maximum (FWHM) of 42 nm is achieved in both bands. The detector showed a rise time (\u0000<inline-formula> <tex-math>${t}_{text {r}}$ </tex-math></inline-formula>\u0000) of 92 ms and a fall time (\u0000<inline-formula> <tex-math>${t}_{text {f}}$ </tex-math></inline-formula>\u0000) of 271 ms under 530 nm illumination, along with a stable performance up to 25 days in ambient conditions. This attempt demonstrates a stable narrow dual-band photodetection using a lead-free Cs2AgBiBr6 double PSC for multispectral imaging applications.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":null,"pages":null},"PeriodicalIF":2.9,"publicationDate":"2024-09-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142518043","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Since its discovery in the previous decade, ferroelectricity (FE) in zirconium-doped hafnium oxide (HZO) has been studied intensively. With HZO being incorporated in multiple applications, grain size reduction has become essential to enhance the ferroelectric performance and scalability. A common method is implementing a dielectric interlayer (IL) in the middle of HZO films while sacrificing operating power caused by voltage drop across the additional material. This research implemented W and Mo metal ILs in the middle of the HZO stack to prevent grain growth. The effects of the ILs on ferroelectric performance were studied using metal-ferroelectric–insulator-silicon structure. Transmission electron microscopy (TEM) and grazing-incidence X-ray diffraction were used to examine the grain formation in HZO. The results show that metal ILs have successfully improved the ferroelectric performance by suppressing the nonferroelectric monoclinic phase while promoting the formation of the orthorhombic phase. The sample with W IL acting as electrodes for both upper and under HZO thin films was more resilient to fatigue than that with the Mo IL. Hence, W metal ILs can enable HZO implementation in a wider range of application.
自从前十年发现掺锆氧化铪（HZO）的铁电性（FE）以来，人们一直在对其进行深入研究。随着 HZO 被应用于多种领域，缩小晶粒尺寸对于提高铁电性能和可扩展性至关重要。一种常见的方法是在 HZO 薄膜中间加入介电中间层 (IL)，但会因附加材料上的电压降而牺牲工作功率。这项研究在 HZO 叠层中间加入了 W 和 Mo 金属 IL，以防止晶粒生长。利用金属-铁电-绝缘体-硅结构研究了绝缘体对铁电性能的影响。透射电子显微镜（TEM）和掠入射 X 射线衍射被用来研究 HZO 中晶粒的形成。结果表明，金属绝缘体抑制了非铁电性单斜相，同时促进了正交相的形成，从而成功地改善了铁电性能。使用 W IL 作为上层和下层 HZO 薄膜电极的样品比使用 Mo IL 的样品具有更强的抗疲劳性。因此，金属 W IL 可使 HZO 的应用范围更广。
{"title":"Metal Interlayer Insertion for Grain Engineering in Ferroelectric Hf₀.₅Zr₀.₅O₂","authors":"Anh-Duy Nguyen;Si-Un Song;An Hoang Thuy Nguyen;Cuong-Manh Nguyen;Ye-Eun Hong;Yeongshin Ham;Jae-Kyeong Kim;Jong-Hwa Baek;Kyungsoo Hwang;Geon Park;Hyun Soo Kim;Hoyeon Sin;Rino Choi","doi":"10.1109/TED.2024.3447614","DOIUrl":"https://doi.org/10.1109/TED.2024.3447614","url":null,"abstract":"Since its discovery in the previous decade, ferroelectricity (FE) in zirconium-doped hafnium oxide (HZO) has been studied intensively. With HZO being incorporated in multiple applications, grain size reduction has become essential to enhance the ferroelectric performance and scalability. A common method is implementing a dielectric interlayer (IL) in the middle of HZO films while sacrificing operating power caused by voltage drop across the additional material. This research implemented W and Mo metal ILs in the middle of the HZO stack to prevent grain growth. The effects of the ILs on ferroelectric performance were studied using metal-ferroelectric–insulator-silicon structure. Transmission electron microscopy (TEM) and grazing-incidence X-ray diffraction were used to examine the grain formation in HZO. The results show that metal ILs have successfully improved the ferroelectric performance by suppressing the nonferroelectric monoclinic phase while promoting the formation of the orthorhombic phase. The sample with W IL acting as electrodes for both upper and under HZO thin films was more resilient to fatigue than that with the Mo IL. Hence, W metal ILs can enable HZO implementation in a wider range of application.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":null,"pages":null},"PeriodicalIF":2.9,"publicationDate":"2024-09-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142517988","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-24DOI: 10.1109/TED.2024.3463271
{"title":"IEEE ELECTRON DEVICES SOCIETY","authors":"","doi":"10.1109/TED.2024.3463271","DOIUrl":"https://doi.org/10.1109/TED.2024.3463271","url":null,"abstract":"","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":null,"pages":null},"PeriodicalIF":2.9,"publicationDate":"2024-09-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10691650","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142320483","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-24DOI: 10.1109/TED.2024.3458945
Mansura Sadek;Sang-Woo Han;Anusmita Chakravorty;Jesse T. Kemmerling;Rian Guan;Jianan Song;Yixin Xiong;James Lundh;Karl D. Hobart;Travis J. Anderson;Rongming Chu
In gallium nitride (GaN) lateral power devices with advanced E-field management, isolation becomes a bottleneck for achieving higher breakdown voltage (BV). To understand the physical mechanism of isolation, the experimental analysis of isolation structures is done in this work. This article presents the measured leakage current and breakdown characteristics of isolation structures, compatible with lateral devices. For unimplanted isolation structures, leakage is injection barrier limited and breakdown is by surface punchthrough. BV has a quadratic dependence on the isolation length. Ion implantation introduces trap-limited hopping conduction, marked by the exponentially field-dependent conductance. After implantation, despite an increase in leakage current, BV increases drastically. The dependence of BV on isolation length changes from quadratic in unimplanted isolation to linear in implanted one due to flattening of E-field. To achieve high BV in GaN lateral power devices, the implanted isolation structure is preferred at the cost of high isolation leakage.
{"title":"Leakage Current and Breakdown Characteristics of Isolation in Gallium Nitride Lateral Power Devices","authors":"Mansura Sadek;Sang-Woo Han;Anusmita Chakravorty;Jesse T. Kemmerling;Rian Guan;Jianan Song;Yixin Xiong;James Lundh;Karl D. Hobart;Travis J. Anderson;Rongming Chu","doi":"10.1109/TED.2024.3458945","DOIUrl":"https://doi.org/10.1109/TED.2024.3458945","url":null,"abstract":"In gallium nitride (GaN) lateral power devices with advanced E-field management, isolation becomes a bottleneck for achieving higher breakdown voltage (BV). To understand the physical mechanism of isolation, the experimental analysis of isolation structures is done in this work. This article presents the measured leakage current and breakdown characteristics of isolation structures, compatible with lateral devices. For unimplanted isolation structures, leakage is injection barrier limited and breakdown is by surface punchthrough. BV has a quadratic dependence on the isolation length. Ion implantation introduces trap-limited hopping conduction, marked by the exponentially field-dependent conductance. After implantation, despite an increase in leakage current, BV increases drastically. The dependence of BV on isolation length changes from quadratic in unimplanted isolation to linear in implanted one due to flattening of E-field. To achieve high BV in GaN lateral power devices, the implanted isolation structure is preferred at the cost of high isolation leakage.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":null,"pages":null},"PeriodicalIF":2.9,"publicationDate":"2024-09-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142579209","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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