Pub Date : 2024-08-02DOI: 10.1109/JSTQE.2024.3437193
Maryam Sadat Amiri Naeini;Pierre Berini
Wafer-level testing is an important step for process and quality control of electronic chips in integrated circuit (IC) manufacturing which occurs before packaging. The process of wafer probing in its conventional contacting schemes, becomes more complicated as ICs move to smaller technology nodes and more compact designs, greatly increasing testing costs. Non-contact optical wafer probing can overcome physical probing complications, reducing costs, and increasing throughput and reliability. In this article, a CMOS compatible, broadband (22 GHz), small footprint (5 μm dia.) plasmonic electro-optic modulator of low insertion loss (4 dB) and wide optical working bandwidth (100 nm) is proposed and demonstrated as a potential solution for wafer-level optical testing. The device modulates in reflection an incident optical carrier emerging from an optical fiber in a non-contact arrangement, to work as a data output channel from the wafer. A modulation depth of over 2% is achieved which should be sufficient to meet the requirements of wafer-level testing. The device can be placed anywhere on wafer.
{"title":"High-Speed Electro-Optic Plasmonic Modulator for CMOS Non-Contact Wafer-Level Testing","authors":"Maryam Sadat Amiri Naeini;Pierre Berini","doi":"10.1109/JSTQE.2024.3437193","DOIUrl":"10.1109/JSTQE.2024.3437193","url":null,"abstract":"Wafer-level testing is an important step for process and quality control of electronic chips in integrated circuit (IC) manufacturing which occurs before packaging. The process of wafer probing in its conventional contacting schemes, becomes more complicated as ICs move to smaller technology nodes and more compact designs, greatly increasing testing costs. Non-contact optical wafer probing can overcome physical probing complications, reducing costs, and increasing throughput and reliability. In this article, a CMOS compatible, broadband (22 GHz), small footprint (5 μm dia.) plasmonic electro-optic modulator of low insertion loss (4 dB) and wide optical working bandwidth (100 nm) is proposed and demonstrated as a potential solution for wafer-level optical testing. The device modulates in reflection an incident optical carrier emerging from an optical fiber in a non-contact arrangement, to work as a data output channel from the wafer. A modulation depth of over 2% is achieved which should be sufficient to meet the requirements of wafer-level testing. The device can be placed anywhere on wafer.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"30 4: Adv. Mod. and Int. beyond Si and InP-based Plt.","pages":"1-9"},"PeriodicalIF":4.3,"publicationDate":"2024-08-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141883752","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Lithium Niobate is a ferroelectric material with interesting physical properties. In particular, Periodically Poled Lithium Niobate (PPLN) crystals have been used in diverse applications, such as non-linear optics or microlens array fabrication. In this work, we used a PPLN crystal having hexagonal reversed polarization domains, disposed on a square array of 200 µm period. We applied a temperature gradient to the PPLN and simultaneously observed it with a lensless incoherent holographic microscope. We observed that the phase of the inverse polarization domains varied depending on the temperature applied. Therefore, we induced a thermo-optical modulation of the PPLN crystal. We further analysed the behaviour of the PPLN, propagating the complex field beyond the crystal and plotting its intensity. We found that an elongated bright spot was formed at the centre of each hexagonal reversed polarization domain, due to diffraction. Given their shape and the nature of the phenomenon, these intensity spots are similar to Poisson spots. The intensity of the spots depended on the phase of the PPLN (hence, on the temperature applied). Therefore, we were able to generate a tunable Poisson spot array by controlling the temperature of the PPLN.
{"title":"Thermo-Optical Modulation of PPLN Crystal for Tunable Poisson Spot Array","authors":"Nicolo Incardona;Jaromir Behal;Veronica Vespini;Sara Coppola;Vittorio Bianco;Lisa Miccio;Simonetta Grilli;Manuel Martinez-Corral;Pietro Ferraro","doi":"10.1109/JSTQE.2024.3434659","DOIUrl":"10.1109/JSTQE.2024.3434659","url":null,"abstract":"Lithium Niobate is a ferroelectric material with interesting physical properties. In particular, Periodically Poled Lithium Niobate (PPLN) crystals have been used in diverse applications, such as non-linear optics or microlens array fabrication. In this work, we used a PPLN crystal having hexagonal reversed polarization domains, disposed on a square array of 200 µm period. We applied a temperature gradient to the PPLN and simultaneously observed it with a lensless incoherent holographic microscope. We observed that the phase of the inverse polarization domains varied depending on the temperature applied. Therefore, we induced a thermo-optical modulation of the PPLN crystal. We further analysed the behaviour of the PPLN, propagating the complex field beyond the crystal and plotting its intensity. We found that an elongated bright spot was formed at the centre of each hexagonal reversed polarization domain, due to diffraction. Given their shape and the nature of the phenomenon, these intensity spots are similar to Poisson spots. The intensity of the spots depended on the phase of the PPLN (hence, on the temperature applied). Therefore, we were able to generate a tunable Poisson spot array by controlling the temperature of the PPLN.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"30 4: Adv. Mod. and Int. beyond Si and InP-based Plt.","pages":"1-8"},"PeriodicalIF":4.3,"publicationDate":"2024-07-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10613376","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141864296","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-29DOI: 10.1109/JSTQE.2024.3434581
Rutwik Joshi;Luke F. Lester;Mantu K. Hudait
In this work, we propose aninitial framework and present numerical estimates for designing a GeSn-based quantum well (QW) laser that can attain efficient lasing, while utilizing a monolithic lattice matched (LM) InGaAs/GeSn/InGaAs stack. GeSn QW emission characteristics depend significantly on the quantized energy level as the bulk bandgap reduces and approaches zero for high Sn. One factor that diminishes the quantum efficiency of light sources is the defects present within the active region, which result in non-radiative recombination. Furthermore, defects at the interface can hinder the band alignment causing loss of carrier confinement. InGaAs, InAlAs and a well-designed LGB can provide large band offsets with GeSn to form a type I separate confinement heterostructure (SCH) QW laser structure while enabling a virtually defect-free active region suitable for room temperature operation and scalable to an arbitrary number of QWs. When LM, the InAlAs and InGaAs layers provide a large total band offset of ∼1.1eV and ∼0.6eV, respectively. For a 10 nm GeSn QW SCH laser, a threshold current (J TH ) of ∼10 A/cm 2 can be achieved at an emission wavelength of ∼2.6 μm with a net material and modal gain of ∼3000 cm −1 and ∼40 cm −1 , respectively. The J TH and net gain can be optimized for the InAlAs/InGaAs/GeSn/InGaAs/InAlAs SCH laser structure for Sn between 8--18% by adaptively designing the SCH waveguide and QW. Through adaptive waveguide design, quantization, and Sn alloying, a wide application space (1.2 μm to 6 μm) can be covered.
{"title":"Lattice Matched Tunable Wavelength GeSn Quantum Well Laser Architecture: Theoretical Investigation","authors":"Rutwik Joshi;Luke F. Lester;Mantu K. Hudait","doi":"10.1109/JSTQE.2024.3434581","DOIUrl":"10.1109/JSTQE.2024.3434581","url":null,"abstract":"In this work, we propose aninitial framework and present numerical estimates for designing a GeSn-based quantum well (QW) laser that can attain efficient lasing, while utilizing a monolithic lattice matched (LM) InGaAs/GeSn/InGaAs stack. GeSn QW emission characteristics depend significantly on the quantized energy level as the bulk bandgap reduces and approaches zero for high Sn. One factor that diminishes the quantum efficiency of light sources is the defects present within the active region, which result in non-radiative recombination. Furthermore, defects at the interface can hinder the band alignment causing loss of carrier confinement. InGaAs, InAlAs and a well-designed LGB can provide large band offsets with GeSn to form a type I separate confinement heterostructure (SCH) QW laser structure while enabling a virtually defect-free active region suitable for room temperature operation and scalable to an arbitrary number of QWs. When LM, the InAlAs and InGaAs layers provide a large total band offset of ∼1.1eV and ∼0.6eV, respectively. For a 10 nm GeSn QW SCH laser, a threshold current (J\u0000<sub>TH</sub>\u0000) of ∼10 A/cm\u0000<sup>2</sup>\u0000 can be achieved at an emission wavelength of ∼2.6 μm with a net material and modal gain of ∼3000 cm\u0000<sup>−1</sup>\u0000 and ∼40 cm\u0000<sup>−1</sup>\u0000, respectively. The J\u0000<sub>TH</sub>\u0000 and net gain can be optimized for the InAlAs/InGaAs/GeSn/InGaAs/InAlAs SCH laser structure for Sn between 8--18% by adaptively designing the SCH waveguide and QW. Through adaptive waveguide design, quantization, and Sn alloying, a wide application space (1.2 μm to 6 μm) can be covered.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 1: SiGeSn Infrared Photon. and Quantum Electronics","pages":"1-12"},"PeriodicalIF":4.3,"publicationDate":"2024-07-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141864294","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-29DOI: 10.1109/JSTQE.2024.3434566
Dominic A. Duffy;Igor P. Marko;Christian Fuchs;Wolfgang Stolz;Stephen J. Sweeney
We undertake a comprehensive investigation of the temperature (T) and injection dependence of the modal gain in 1240 nm-emitting Type-II (GaIn)As/Ga(AsSb)/(GaIn)As “W” laser active regions for 25 $leq$ T $leq$ 300 K. From direct measurements of the short-wavelength transparency point, which serves as a proxy for population inversion, the behaviour of the maximum gain and peak blueshift are used to highlight the different temperature dependencies of the gain at different injection regimes. We show that the thermal redshift of the peak gain at room temperature reduces from 0.53 $pm$ 0.03 nm/ $^circ$ C under flat band conditions to 0.32 $pm$ 0.03 nm/ $^circ$ C at threshold. These results demonstrate the significant role of injection-dependent electrostatic effects and how it may be used through design to tailor the thermal properties of semiconductor lasers employing Type-II “W” active regions.
我们对 25$leq$T$leq$300 K 时 1240 nm 发射的 Type-II (GaIn)As/Ga(AsSb)/(GaIn)As "W" 激光有源区的模态增益的温度（T）和注入依赖性进行了全面研究。通过直接测量短波长透明点（作为种群反转的替代），最大增益和峰值蓝移的行为被用来突出不同注入制度下增益的不同温度依赖性。我们发现，在室温下，峰值增益的热红移从平带条件下的 0.53$pm$0.03 nm/$^circ$C 下降到阈值条件下的 0.32$pm$0.03 nm/$^circ$C。这些结果证明了依赖注入的静电效应的重要作用，以及如何通过设计来定制采用 II 型 "W "有源区的半导体激光器的热特性。
{"title":"The Impact of Band Bending on the Thermal Behaviour of Gain in Type-II GaAs-Based “W”-Lasers","authors":"Dominic A. Duffy;Igor P. Marko;Christian Fuchs;Wolfgang Stolz;Stephen J. Sweeney","doi":"10.1109/JSTQE.2024.3434566","DOIUrl":"10.1109/JSTQE.2024.3434566","url":null,"abstract":"We undertake a comprehensive investigation of the temperature (T) and injection dependence of the modal gain in 1240 nm-emitting Type-II (GaIn)As/Ga(AsSb)/(GaIn)As “W” laser active regions for 25\u0000<inline-formula><tex-math>$leq$</tex-math></inline-formula>\u0000T\u0000<inline-formula><tex-math>$leq$</tex-math></inline-formula>\u0000300 K. From direct measurements of the short-wavelength transparency point, which serves as a proxy for population inversion, the behaviour of the maximum gain and peak blueshift are used to highlight the different temperature dependencies of the gain at different injection regimes. We show that the thermal redshift of the peak gain at room temperature reduces from 0.53\u0000<inline-formula><tex-math>$pm$</tex-math></inline-formula>\u00000.03 nm/\u0000<inline-formula><tex-math>$^circ$</tex-math></inline-formula>\u0000C under flat band conditions to 0.32\u0000<inline-formula><tex-math>$pm$</tex-math></inline-formula>\u00000.03 nm/\u0000<inline-formula><tex-math>$^circ$</tex-math></inline-formula>\u0000C at threshold. These results demonstrate the significant role of injection-dependent electrostatic effects and how it may be used through design to tailor the thermal properties of semiconductor lasers employing Type-II “W” active regions.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 2: Pwr. and Effic. Scaling in Semiconductor Lasers","pages":"1-10"},"PeriodicalIF":4.3,"publicationDate":"2024-07-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141864297","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A compact fiber-optic ultrasonic sensor based on the anti-resonant reflecting optical waveguide (ARROW) in hollow core fiber is proposed and demonstrated experimentally. The proposed sensor consists of a section of hollow core fiber sandwiched by two single mode fibers. The hollow core fibers with different inner diameters are utilized to optimize the cladding thickness for detection. Moreover, the hollow core fiber's outer surface is coated with polymer materials that possess varying Young's modulus and refractive index. A sensitivity term, determined by the spectral slope and the material properties of ARROW, is proposed to evaluate the ultrasonic response of pre- and post-coating sensors. The results indicate that a thicker fiber cladding contributes to a higher sensitivity, and the polymer coatings also significantly improve the sensor response. The final sensor exhibits a −10 dB bandwidth of about 5.4 MHz and a temperature sensitivity of 220 pm/°C. By incorporating a waterproof aluminum layer, the acoustic pressure sensitivity is assessed, demonstrating its superiority compared to that of a fiber grating sensor. The proposed sensor introduces a novel high-performance ultrasonic probing approach relative to the conventional interference or grating methods.
本文提出了一种基于中空芯光纤反谐振反射光波导（ARROW）的紧凑型光纤超声波传感器，并进行了实验演示。拟议的传感器由一段中空芯纤和两根单模光纤夹层组成。利用不同内径的中空纤芯来优化包层厚度，以便进行探测。此外，中空纤芯光纤的外表面涂有具有不同杨氏模量和折射率的聚合物材料。根据 ARROW 的光谱斜率和材料特性，提出了一个灵敏度项，用于评估涂覆前和涂覆后传感器的超声波响应。结果表明，较厚的光纤包层有助于提高灵敏度，而聚合物涂层也能显著改善传感器的响应。最终传感器的 -10 dB 带宽约为 5.4 MHz，温度灵敏度为 220 pm/°C。通过加入防水铝层，对声压灵敏度进行了评估，证明其优于光纤光栅传感器。与传统的干涉或光栅方法相比，拟议的传感器引入了一种新型高性能超声探测方法。
{"title":"Highly Sensitive Ultrasonic Sensor Using Anti-Resonant Reflection Optical Waveguide Mechanism in a Hollow-Core Fiber","authors":"Zhihua Shao;Ziyu Zhang;Ruiming Liang;Xueguang Qiao","doi":"10.1109/JSTQE.2024.3435007","DOIUrl":"10.1109/JSTQE.2024.3435007","url":null,"abstract":"A compact fiber-optic ultrasonic sensor based on the anti-resonant reflecting optical waveguide (ARROW) in hollow core fiber is proposed and demonstrated experimentally. The proposed sensor consists of a section of hollow core fiber sandwiched by two single mode fibers. The hollow core fibers with different inner diameters are utilized to optimize the cladding thickness for detection. Moreover, the hollow core fiber's outer surface is coated with polymer materials that possess varying Young's modulus and refractive index. A sensitivity term, determined by the spectral slope and the material properties of ARROW, is proposed to evaluate the ultrasonic response of pre- and post-coating sensors. The results indicate that a thicker fiber cladding contributes to a higher sensitivity, and the polymer coatings also significantly improve the sensor response. The final sensor exhibits a −10 dB bandwidth of about 5.4 MHz and a temperature sensitivity of 220 pm/°C. By incorporating a waterproof aluminum layer, the acoustic pressure sensitivity is assessed, demonstrating its superiority compared to that of a fiber grating sensor. The proposed sensor introduces a novel high-performance ultrasonic probing approach relative to the conventional interference or grating methods.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"30 6: Advances and Applications of Hollow-Core Fibers","pages":"1-7"},"PeriodicalIF":4.3,"publicationDate":"2024-07-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141864295","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Explosive development of artificial intelligence has recently driven strong demand of ultra-large bandwidth interconnects. Optical I/O is considered as a promising approach of implementing ultra-short link data transmission among computing chips. Here, we demonstrated an O-band 8 × 100 Gb/s transmitter based on single quantum dot mode-locked comb laser and arrayed 8-λ microring modulators. The semiconductor laser currently offers the lowest power consumption for multi-wavelength operation and the most compact footprint. All 8 comb channels are modulated at 100 Gbps, with total energy efficiency of the transmitter at 1.66 pJ/bit (laser source included).
{"title":"Energy Efficient and High Bandwidth Quantum Dot Comb Laser Based Silicon Microring Transmitter for Optical Interconnects","authors":"Jiajian Chen;Bo Yang;Jiale Qin;Jingzhi Huang;Xiangru Cui;Jie Yan;Dingyi Wu;Xi Xiao;Zihao Wang;Changyuan Yu;Jianjun Zhang;Ting Wang","doi":"10.1109/JSTQE.2024.3432313","DOIUrl":"10.1109/JSTQE.2024.3432313","url":null,"abstract":"Explosive development of artificial intelligence has recently driven strong demand of ultra-large bandwidth interconnects. Optical I/O is considered as a promising approach of implementing ultra-short link data transmission among computing chips. Here, we demonstrated an O-band 8 × 100 Gb/s transmitter based on single quantum dot mode-locked comb laser and arrayed 8-λ microring modulators. The semiconductor laser currently offers the lowest power consumption for multi-wavelength operation and the most compact footprint. All 8 comb channels are modulated at 100 Gbps, with total energy efficiency of the transmitter at 1.66 pJ/bit (laser source included).","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 2: Pwr. and Effic. Scaling in Semiconductor Lasers","pages":"1-10"},"PeriodicalIF":4.3,"publicationDate":"2024-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141773022","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The two-dimensional heat distribution (steady-state and transient) within high-power diode laser stacks is simulated using a newly-developed model, based on finite element analysis and calibrated against prior experimental results. The model is then used to estimate the average temperature and thermal impedance of the stack elements under quasi-continuous-wave pulsed operation and investigate the impact of variations to the pulse conditions (pulse width and duty cycle). It is also used to show how using improved heat-spreading materials and increasing cooling efficiency can significantly reduce thermal impedance, thereby enabling duty cycle and optical power scaling.
{"title":"Finite-Element Thermal Simulation of High-Power Diode Laser Stacks for High-Duty-Cycle Pump Applications","authors":"Mohamed Elattar;Marko Hübner;Martin Wilkens;Arnim Ginolas;Paul Crump","doi":"10.1109/JSTQE.2024.3431293","DOIUrl":"10.1109/JSTQE.2024.3431293","url":null,"abstract":"The two-dimensional heat distribution (steady-state and transient) within high-power diode laser stacks is simulated using a newly-developed model, based on finite element analysis and calibrated against prior experimental results. The model is then used to estimate the average temperature and thermal impedance of the stack elements under quasi-continuous-wave pulsed operation and investigate the impact of variations to the pulse conditions (pulse width and duty cycle). It is also used to show how using improved heat-spreading materials and increasing cooling efficiency can significantly reduce thermal impedance, thereby enabling duty cycle and optical power scaling.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 2: Pwr. and Effic. Scaling in Semiconductor Lasers","pages":"1-7"},"PeriodicalIF":4.3,"publicationDate":"2024-07-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141740516","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-19DOI: 10.1109/JSTQE.2024.3431225
Felix Mauerhoff;Philipp Hildenstein;André Maaßdorf;David Feise;Nils Werner;Johannes Glaab;Gunnar Blume;Katrin Paschke
GaAs-based semiconductor lasers with emission wavelengths around 626 nm, 725 nm and 1180 nm are challenging due to the necessary strain in the quantum well region. However, there is a lively interest worldwide in tapping into these wavelength ranges with semiconductor lasers. Here we describe the fabrication and properties of both broad area and ridge waveguide semiconductor lasers emitting at 626 nm, 725 nm and 1180 nm. For that, GaAs-based laser structures with highly strained quantum wells have been developed.
{"title":"GaAs Based Edge Emitters at 626 nm, 725 nm and 1180 nm","authors":"Felix Mauerhoff;Philipp Hildenstein;André Maaßdorf;David Feise;Nils Werner;Johannes Glaab;Gunnar Blume;Katrin Paschke","doi":"10.1109/JSTQE.2024.3431225","DOIUrl":"10.1109/JSTQE.2024.3431225","url":null,"abstract":"GaAs-based semiconductor lasers with emission wavelengths around 626 nm, 725 nm and 1180 nm are challenging due to the necessary strain in the quantum well region. However, there is a lively interest worldwide in tapping into these wavelength ranges with semiconductor lasers. Here we describe the fabrication and properties of both broad area and ridge waveguide semiconductor lasers emitting at 626 nm, 725 nm and 1180 nm. For that, GaAs-based laser structures with highly strained quantum wells have been developed.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 2: Pwr. and Effic. Scaling in Semiconductor Lasers","pages":"1-10"},"PeriodicalIF":4.3,"publicationDate":"2024-07-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141740514","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
To realize high-power GaInAsP/InP pump lasers for Raman amplifiers, we propose a laser with a GaInAsP/InP electric field control layer that has high design freedom and is suitable for mass production. This laser structure realizes high power and low power consumption of Raman pump lasers with fiber output power exceeding 1 W at high temperature operation of 35 °C, and extremely low power consumption of 3.7 W at 55 °C with 0.5 W fiber output power is demonstrated. We also demonstrate that this laser structure is effective in achieving high-power fiber output power exceeding 0.78 W at 35 °C in the range from 1395 nm to 1547 nm for the application of broadband Raman amplification, which is a key technology for ultra-high-speed large-capacity optical transmission systems using digital coherent systems.
{"title":"High Power and Low Power Consumption Raman Pump Lasers With Electric Field Control Layer for Wide-Bands Raman Amplification","authors":"Junji Yoshida;Naoya Hojo;Masaki Wakaba;Masayoshi Seki;Keiji Sakaguchi;Motoyuki Tanaka;Shun Kamada;Takuya Kokawa;Yusuke Isozaki;Akihiko Kasukawa","doi":"10.1109/JSTQE.2024.3430223","DOIUrl":"10.1109/JSTQE.2024.3430223","url":null,"abstract":"To realize high-power GaInAsP/InP pump lasers for Raman amplifiers, we propose a laser with a GaInAsP/InP electric field control layer that has high design freedom and is suitable for mass production. This laser structure realizes high power and low power consumption of Raman pump lasers with fiber output power exceeding 1 W at high temperature operation of 35 °C, and extremely low power consumption of 3.7 W at 55 °C with 0.5 W fiber output power is demonstrated. We also demonstrate that this laser structure is effective in achieving high-power fiber output power exceeding 0.78 W at 35 °C in the range from 1395 nm to 1547 nm for the application of broadband Raman amplification, which is a key technology for ultra-high-speed large-capacity optical transmission systems using digital coherent systems.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 2: Pwr. and Effic. Scaling in Semiconductor Lasers","pages":"1-9"},"PeriodicalIF":4.3,"publicationDate":"2024-07-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141740515","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-18DOI: 10.1109/JSTQE.2024.3430214
Virat Tara;Rui Chen;Johannes E. Fröch;Zhuoran Fang;Jie Fang;Romil Audhkhasi;Minho Choi;Arka Majumdar
Reconfigurable free-space metasurfaces with subwavelength-scale tunable nano-scatterers can manipulate light for many applications ranging from bio-medical imaging, light detection and ranging to optical computing. Several endeavors have been made to achieve tunable metasurfaces using thermo-optic, electro-optic effects, liquid crystals, and phase change materials (PCMs). PCMs stand out, particularly for low-tuning frequency and low-power consumption applications, thanks to their non-volatile nature and drastic index modulation, leading to zero-static power and a small footprint. Antimony sulfide (Sb 2 S 3 ) is an emerging low-loss PCM with the widest bandgap reported so far, enabling operation at low wavelengths down to ∼600 nm in the visible spectrum. In addition, Sb 2 S 3 has slow crystallization speed, which enables amorphization of large-volume Sb 2 S 3 without unintentional recrystallization. This makes Sb 2 S 3 suitable for application in reconfigurable metasurfaces, where the switching area (usually > hundreds of μm 2 ) is significantly larger than photonic integrated circuits (tens of μm 2 ). Herein, we experimentally demonstrate an electrically tunable notch filter at a wavelength of ∼1150 nm on a Sb 2 S 3 -cladded silicon-on-sapphire platform. The notch filter is enabled by a 2-dimensional symmetry-protected quasi-bound-state-in-the-continuum (quasi-BIC) metasurface. We experimentally observed a quality factor of up to ∼200 and demonstrated reversible tuning of a record large volume (4.5 μm 3 ) of Sb 2 S 3 . Thanks to the large modulation provided by Sb 2 S 3 , we observed a resonance shift as high as ∼4 nm in situ using a doped silicon microheater. Our work paves the way for compact and low-power nonvolatile notch filters. Moreover, due to the low loss of Sb 2 S 3 in the visible, this work also lays the foundation for phase-only modulation in the visible using PCMs.
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