Pub Date : 1998-06-22DOI: 10.1109/ICSD.1998.709224
S. Maeta, F. Yoshida, Y. Kamitani, M. Yoshiura
It has been confirmed from TSC experiments and analyses that there were some groups of discrete state in anthracene single crystals with and without impurities and two kinds of state to state transition of carriers played important roles in their electrical conduction.
{"title":"Discrete states in anthracene with and without impurities","authors":"S. Maeta, F. Yoshida, Y. Kamitani, M. Yoshiura","doi":"10.1109/ICSD.1998.709224","DOIUrl":"https://doi.org/10.1109/ICSD.1998.709224","url":null,"abstract":"It has been confirmed from TSC experiments and analyses that there were some groups of discrete state in anthracene single crystals with and without impurities and two kinds of state to state transition of carriers played important roles in their electrical conduction.","PeriodicalId":13148,"journal":{"name":"ICSD'98. Proceedings of the 1998 IEEE 6th International Conference on Conduction and Breakdown in Solid Dielectrics (Cat. No.98CH36132)","volume":"5 1","pages":"47-50"},"PeriodicalIF":0.0,"publicationDate":"1998-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87451453","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-06-22DOI: 10.1109/ICSD.1998.709273
C. Cha, E. Chor, H. Gong, T. Teo, A. Q. Zhang, L. Chan
The immediate threshold voltage (V/sub th/) measurements conducted on fresh flash memory devices gained no definite results: the obtained cell drain current (I/sub d/) versus applied gate voltage Old plots for the devices were oscillating and erratic. Suspected cause for this abnormal phenomenon arises from the random to-and-fro movements of the embedded positive charges present in the flash devices, across the reoxidized nitrided oxide (ONO) interpoly dielectric layer in the availability of electric fields. Application of a negative sweep voltage to the control gate of the fresh memory devices prior to the conduction of the V/sub th/ tests, however, seems to produce smooth I/sub d/ vs. V/sub g/ curve plots which yield repeatable as well as reasonable V/sub th/ values. The acquirement of such electrical results readily suggest the partial or full removal of the initial embedded positive charges, which were present in the devices as a result of charging from plasma exposure during the etching/implantation fabrication steps, by the applied gate potential.
在新鲜闪存器件上进行的立即阈值电压(V/sub /)测量没有得到明确的结果:获得的电池漏极电流(I/sub / d/)与施加的栅极电压。这种异常现象的怀疑原因是由于在电场的可用性下，flash器件中嵌入的正电荷在再氧化氮化氧化物(ONO)内插介电层上的随机来回运动。然而，在导通V/sub /测试之前，对新存储器件的控制门施加负扫描电压，似乎可以产生平滑的I/sub d/ vs. V/sub g/曲线图，从而产生可重复的以及合理的V/sub /值。获得这样的电学结果很容易表明，通过施加栅极电位，部分或全部去除了初始嵌入的正电荷，这些正电荷是在蚀刻/植入制造步骤中由于等离子体暴露而带电而存在于器件中的。
{"title":"Application of a negative sweep voltage to control gate of fresh flash memory devices to facilitate threshold voltage test measurement","authors":"C. Cha, E. Chor, H. Gong, T. Teo, A. Q. Zhang, L. Chan","doi":"10.1109/ICSD.1998.709273","DOIUrl":"https://doi.org/10.1109/ICSD.1998.709273","url":null,"abstract":"The immediate threshold voltage (V/sub th/) measurements conducted on fresh flash memory devices gained no definite results: the obtained cell drain current (I/sub d/) versus applied gate voltage Old plots for the devices were oscillating and erratic. Suspected cause for this abnormal phenomenon arises from the random to-and-fro movements of the embedded positive charges present in the flash devices, across the reoxidized nitrided oxide (ONO) interpoly dielectric layer in the availability of electric fields. Application of a negative sweep voltage to the control gate of the fresh memory devices prior to the conduction of the V/sub th/ tests, however, seems to produce smooth I/sub d/ vs. V/sub g/ curve plots which yield repeatable as well as reasonable V/sub th/ values. The acquirement of such electrical results readily suggest the partial or full removal of the initial embedded positive charges, which were present in the devices as a result of charging from plasma exposure during the etching/implantation fabrication steps, by the applied gate potential.","PeriodicalId":13148,"journal":{"name":"ICSD'98. Proceedings of the 1998 IEEE 6th International Conference on Conduction and Breakdown in Solid Dielectrics (Cat. No.98CH36132)","volume":"11 1","pages":"253-256"},"PeriodicalIF":0.0,"publicationDate":"1998-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87709785","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-06-22DOI: 10.1109/ICSD.1998.709245
C. Heitz
In this investigation a common framework for the physical description of partial discharge (PD) phenomena is presented that holds for internal discharges as well as for surface and corona discharges. Within this framework a PD process is viewed as a random point process. It is shown that this point process can be described by only one conditional probability distribution which can be calculated from few basic physical properties of the discharge physics. From this central distribution measurable quantities like the time-of-occurrence probability p(t) or the so-called Phase-Resolved-Partial-Discharge (PRPD) patterns can be easily derived. For all of the three discharge types (internal, surface, corona) examples are presented that demonstrate the applicability of the model.
{"title":"A general stochastic approach to partial discharge processes","authors":"C. Heitz","doi":"10.1109/ICSD.1998.709245","DOIUrl":"https://doi.org/10.1109/ICSD.1998.709245","url":null,"abstract":"In this investigation a common framework for the physical description of partial discharge (PD) phenomena is presented that holds for internal discharges as well as for surface and corona discharges. Within this framework a PD process is viewed as a random point process. It is shown that this point process can be described by only one conditional probability distribution which can be calculated from few basic physical properties of the discharge physics. From this central distribution measurable quantities like the time-of-occurrence probability p(t) or the so-called Phase-Resolved-Partial-Discharge (PRPD) patterns can be easily derived. For all of the three discharge types (internal, surface, corona) examples are presented that demonstrate the applicability of the model.","PeriodicalId":13148,"journal":{"name":"ICSD'98. Proceedings of the 1998 IEEE 6th International Conference on Conduction and Breakdown in Solid Dielectrics (Cat. No.98CH36132)","volume":"96 1","pages":"139-144"},"PeriodicalIF":0.0,"publicationDate":"1998-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85306909","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-06-22DOI: 10.1109/ICSD.1998.709242
H. Nagamani, S. N. Moorching
The authors show that the Inverse Power Law model seems to fit the physical process of degradation of solid insulation under the influence of partial discharge activity. The present study also indicates that the presence of electrical trees in XLPE leads to partial discharges, the magnitude of which appears to depend on the tree length. Electrical treeing does not appear to contribute to tan /spl delta/ and insulation resistance. The influence of PD activity on the life depends on the type of insulation in which partial discharges are taking place. For example, partial discharge magnitude of 200 pC results in a characteristic life of 2500 hours for MPPF capacitors, whereas a PD magnitude as high as 9000 pC results in a life of more than 5000 hours for machine insulation.
{"title":"A study on the influence of partial discharges on the performance of solid dielectrics","authors":"H. Nagamani, S. N. Moorching","doi":"10.1109/ICSD.1998.709242","DOIUrl":"https://doi.org/10.1109/ICSD.1998.709242","url":null,"abstract":"The authors show that the Inverse Power Law model seems to fit the physical process of degradation of solid insulation under the influence of partial discharge activity. The present study also indicates that the presence of electrical trees in XLPE leads to partial discharges, the magnitude of which appears to depend on the tree length. Electrical treeing does not appear to contribute to tan /spl delta/ and insulation resistance. The influence of PD activity on the life depends on the type of insulation in which partial discharges are taking place. For example, partial discharge magnitude of 200 pC results in a characteristic life of 2500 hours for MPPF capacitors, whereas a PD magnitude as high as 9000 pC results in a life of more than 5000 hours for machine insulation.","PeriodicalId":13148,"journal":{"name":"ICSD'98. Proceedings of the 1998 IEEE 6th International Conference on Conduction and Breakdown in Solid Dielectrics (Cat. No.98CH36132)","volume":"49 1","pages":"127-130"},"PeriodicalIF":0.0,"publicationDate":"1998-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77133408","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-06-22DOI: 10.1109/ICSD.1998.709348
S. Wysocki, H.M. Banford, R. Fouracre
The authors show that high-energy electron irradiation of polyethersulphone brings about changes in the behaviour of both its steady-state and time-resolved fluorescence. This is due largely to the degree of crosslinking that takes place within the material, although it is recognised that chain scission also occurs to a certain extent. Thus, fluorescence is demonstrated to be a viable technique for monitoring structural changes in polymers.
{"title":"The influence of high-energy electron radiation on the distribution of fluorescence lifetimes in polyethersulphone","authors":"S. Wysocki, H.M. Banford, R. Fouracre","doi":"10.1109/ICSD.1998.709348","DOIUrl":"https://doi.org/10.1109/ICSD.1998.709348","url":null,"abstract":"The authors show that high-energy electron irradiation of polyethersulphone brings about changes in the behaviour of both its steady-state and time-resolved fluorescence. This is due largely to the degree of crosslinking that takes place within the material, although it is recognised that chain scission also occurs to a certain extent. Thus, fluorescence is demonstrated to be a viable technique for monitoring structural changes in polymers.","PeriodicalId":13148,"journal":{"name":"ICSD'98. Proceedings of the 1998 IEEE 6th International Conference on Conduction and Breakdown in Solid Dielectrics (Cat. No.98CH36132)","volume":"341 1","pages":"565-568"},"PeriodicalIF":0.0,"publicationDate":"1998-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79532749","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-06-22DOI: 10.1109/ICSD.1998.709252
P. Blumler, N. Paus, G. Salge
The interaction of the morphology with the dielectric aging inside a Polyethylene insulation system has been subject of many investigations. The Nuclear Magnetic Resonance (NMR) technique offers new aspects of examining the morphology during Electrical Treeing which is the last phase of the dielectric aging process. Therefore LDPE-specimen in needle-plane arrangement are electrically aged until different treeing phases are reached. Using the partial discharge measurement technique the aging condition is possible to be detected electrically. The different treeing phases correlate to significant partial discharge patterns. The aged specimen are investigated with the NMR-Imaging-technique especially with regard to morphological changes in the treeing region. Neither cutting nor any other preparation of the samples is necessary so that the aged dielectric material remains unchanged. In principle this measurement technique detects the spatial distribution of nuclear magnetization on a macroscopic scale (micro- to millimeters). However, this magnetization can be prepared in such a way that it contains information of morphological features with a size of a few nanometers. In solids this can be achieved by so-called spin diffusion, which exploits the diffusion of an initially non-equilibrium distribution of the magnetization. Morphological information can then be gained by comparing the experimental result with analytical and solutions of the diffusion equation for boundary conditions reflecting the morphology. The aged LDPE samples show a significant change of the measured signal and the derived morphological parameters in the treeing region. This is a consequence of the increased local temperature driven by the partial discharges followed by an accelerated cooling compared to the production process. This is confirmed by additional experiments with shock cooled molten LDPE samples. As a result the morphology in the treeing region is changed depending on the treeing phase. The size of the crystalline and amorphous regions are changed, the interfaces between them appear to vanish. Additionally a variation of the LDPE model insinuates a change in the lamellar structure of the LDPE which is no longer simple to describe in the aged region. An upgraded model describes the changed lamellar structure considering the dimensionality of the new configuration.
{"title":"Nuclear magnetic resonance imaging of morphological changes during electrical treeing in polyethylene due to partial discharges","authors":"P. Blumler, N. Paus, G. Salge","doi":"10.1109/ICSD.1998.709252","DOIUrl":"https://doi.org/10.1109/ICSD.1998.709252","url":null,"abstract":"The interaction of the morphology with the dielectric aging inside a Polyethylene insulation system has been subject of many investigations. The Nuclear Magnetic Resonance (NMR) technique offers new aspects of examining the morphology during Electrical Treeing which is the last phase of the dielectric aging process. Therefore LDPE-specimen in needle-plane arrangement are electrically aged until different treeing phases are reached. Using the partial discharge measurement technique the aging condition is possible to be detected electrically. The different treeing phases correlate to significant partial discharge patterns. The aged specimen are investigated with the NMR-Imaging-technique especially with regard to morphological changes in the treeing region. Neither cutting nor any other preparation of the samples is necessary so that the aged dielectric material remains unchanged. In principle this measurement technique detects the spatial distribution of nuclear magnetization on a macroscopic scale (micro- to millimeters). However, this magnetization can be prepared in such a way that it contains information of morphological features with a size of a few nanometers. In solids this can be achieved by so-called spin diffusion, which exploits the diffusion of an initially non-equilibrium distribution of the magnetization. Morphological information can then be gained by comparing the experimental result with analytical and solutions of the diffusion equation for boundary conditions reflecting the morphology. The aged LDPE samples show a significant change of the measured signal and the derived morphological parameters in the treeing region. This is a consequence of the increased local temperature driven by the partial discharges followed by an accelerated cooling compared to the production process. This is confirmed by additional experiments with shock cooled molten LDPE samples. As a result the morphology in the treeing region is changed depending on the treeing phase. The size of the crystalline and amorphous regions are changed, the interfaces between them appear to vanish. Additionally a variation of the LDPE model insinuates a change in the lamellar structure of the LDPE which is no longer simple to describe in the aged region. An upgraded model describes the changed lamellar structure considering the dimensionality of the new configuration.","PeriodicalId":13148,"journal":{"name":"ICSD'98. Proceedings of the 1998 IEEE 6th International Conference on Conduction and Breakdown in Solid Dielectrics (Cat. No.98CH36132)","volume":"68 1","pages":"168-172"},"PeriodicalIF":0.0,"publicationDate":"1998-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78738250","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-06-22DOI: 10.1109/ICSD.1998.709257
A. Jeffrey, W. Yin, J. Tanaka, D. Damon
Recent work at the Electrical Insulation Research Center has been concerned with polarization, dielectric relaxation and space charge accumulation in both polyethylene and filled ethylene-propylene copolymers. Measurements of both thermally stimulated currents (TSDC) and the dielectric constants, /spl epsiv/' and /spl epsiv/", by time domain dielectric spectroscopy (TDDS) have been carried out in these investigations. The TSDC measurements made on polyethylene samples showed that significant space charge could be injected from the electrodes into the polymer at poling fields of 5000 kV/m. In contrast, for poling fields below 2/spl times/10/sup 4/ kV/mm the quantity of injected space charge was extremely small in the filled ethylene propylene diene monomer (EPDM) samples. Most of the polarization observed in the EPDM samples was shown to be due to interfacial polarization in samples containing more than 20 phr kaolin clay. This communication reports the results of some measurements on EPDM samples containing kaolin particles whose surfaces have been treated to change the ion concentrations on the surfaces of the kaolin particle.
{"title":"The effects of surface ion concentration on interfacial polarization in EPR/clay composites","authors":"A. Jeffrey, W. Yin, J. Tanaka, D. Damon","doi":"10.1109/ICSD.1998.709257","DOIUrl":"https://doi.org/10.1109/ICSD.1998.709257","url":null,"abstract":"Recent work at the Electrical Insulation Research Center has been concerned with polarization, dielectric relaxation and space charge accumulation in both polyethylene and filled ethylene-propylene copolymers. Measurements of both thermally stimulated currents (TSDC) and the dielectric constants, /spl epsiv/' and /spl epsiv/\", by time domain dielectric spectroscopy (TDDS) have been carried out in these investigations. The TSDC measurements made on polyethylene samples showed that significant space charge could be injected from the electrodes into the polymer at poling fields of 5000 kV/m. In contrast, for poling fields below 2/spl times/10/sup 4/ kV/mm the quantity of injected space charge was extremely small in the filled ethylene propylene diene monomer (EPDM) samples. Most of the polarization observed in the EPDM samples was shown to be due to interfacial polarization in samples containing more than 20 phr kaolin clay. This communication reports the results of some measurements on EPDM samples containing kaolin particles whose surfaces have been treated to change the ion concentrations on the surfaces of the kaolin particle.","PeriodicalId":13148,"journal":{"name":"ICSD'98. Proceedings of the 1998 IEEE 6th International Conference on Conduction and Breakdown in Solid Dielectrics (Cat. No.98CH36132)","volume":"17 1","pages":"189-192"},"PeriodicalIF":0.0,"publicationDate":"1998-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82777835","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-06-22DOI: 10.1109/ICSD.1998.709271
S. Nakamura, A. Ito, G. Sawa, R. Watanabe, H. Ono
In this report, electrical properties of thick films of a carbon-black resin composite have been studied. There is no characteristic change in resistivity around the percolation threshold p/sub c/. However, p/sub c/ can be determined from the electric field dependence of current. The critical exponents of conductivity and dielectric constant are satisfied with the prediction based on the percolation theory.
{"title":"Electrical and dielectric properties of carbon black-resin composite films made by the electrostatic coating method","authors":"S. Nakamura, A. Ito, G. Sawa, R. Watanabe, H. Ono","doi":"10.1109/ICSD.1998.709271","DOIUrl":"https://doi.org/10.1109/ICSD.1998.709271","url":null,"abstract":"In this report, electrical properties of thick films of a carbon-black resin composite have been studied. There is no characteristic change in resistivity around the percolation threshold p/sub c/. However, p/sub c/ can be determined from the electric field dependence of current. The critical exponents of conductivity and dielectric constant are satisfied with the prediction based on the percolation theory.","PeriodicalId":13148,"journal":{"name":"ICSD'98. Proceedings of the 1998 IEEE 6th International Conference on Conduction and Breakdown in Solid Dielectrics (Cat. No.98CH36132)","volume":"24 1","pages":"245-248"},"PeriodicalIF":0.0,"publicationDate":"1998-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84686607","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-06-22DOI: 10.1109/ICSD.1998.709327
V. Abri
The surface flashover (SF) is one of the main causes of the breakdown in high voltage devices insulated with composite materials such as oil/cellulose system. It is highly probable that the SF can be initiated in the oil near the highly stressed electrode then propagates along the oil solid interface to the ground. In this paper the development of the streamer in oil to a creep discharge or surface flashover is qualitatively analyzed, as well as its relationship to the thickness of the paper covering the high voltage electrode. A sphere plane electrode configuration and impulse voltage were used for the investigation. The experimental result has shown a tendency of a thicker paper covering of the high voltage electrode to lower the partial discharge level thus decreasing the probability for the discharge to develop as a surface flashover. The puncturing of the paper seems to be the main cause of the breakdown. This is explained by the facility of the streamer to extract the discharge from the metal source in the punctured region of the electrode.
{"title":"Relationship between the paper covering thickness of the electrode and the development of the surface flashover at impulse voltages","authors":"V. Abri","doi":"10.1109/ICSD.1998.709327","DOIUrl":"https://doi.org/10.1109/ICSD.1998.709327","url":null,"abstract":"The surface flashover (SF) is one of the main causes of the breakdown in high voltage devices insulated with composite materials such as oil/cellulose system. It is highly probable that the SF can be initiated in the oil near the highly stressed electrode then propagates along the oil solid interface to the ground. In this paper the development of the streamer in oil to a creep discharge or surface flashover is qualitatively analyzed, as well as its relationship to the thickness of the paper covering the high voltage electrode. A sphere plane electrode configuration and impulse voltage were used for the investigation. The experimental result has shown a tendency of a thicker paper covering of the high voltage electrode to lower the partial discharge level thus decreasing the probability for the discharge to develop as a surface flashover. The puncturing of the paper seems to be the main cause of the breakdown. This is explained by the facility of the streamer to extract the discharge from the metal source in the punctured region of the electrode.","PeriodicalId":13148,"journal":{"name":"ICSD'98. Proceedings of the 1998 IEEE 6th International Conference on Conduction and Breakdown in Solid Dielectrics (Cat. No.98CH36132)","volume":"10 1","pages":"473-476"},"PeriodicalIF":0.0,"publicationDate":"1998-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88257949","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-06-22DOI: 10.1109/ICSD.1998.709229
T. Christen
We show that charge injection at a field-enhancing defect in a dielectric free of carriers but with a nonlinear carrier mobility corresponds to an instability of the insulating state. The formation of the charged state is governed by two different processes with clearly separated time scales. First, due to a fast growth of a charge-injection mode, a localized charge cloud forms near the injecting defect. Secondly, the charge slowly redistributes in the bulk. In the present paper we discuss the linear instability of the insulating state for cylindrical and spherical geometries. The theory explains an experimentally observed increase of the critical electric field with decreasing size of the injecting contact. Numerical results are presented for dc and ac biased insulators.
{"title":"Charge injection instability","authors":"T. Christen","doi":"10.1109/ICSD.1998.709229","DOIUrl":"https://doi.org/10.1109/ICSD.1998.709229","url":null,"abstract":"We show that charge injection at a field-enhancing defect in a dielectric free of carriers but with a nonlinear carrier mobility corresponds to an instability of the insulating state. The formation of the charged state is governed by two different processes with clearly separated time scales. First, due to a fast growth of a charge-injection mode, a localized charge cloud forms near the injecting defect. Secondly, the charge slowly redistributes in the bulk. In the present paper we discuss the linear instability of the insulating state for cylindrical and spherical geometries. The theory explains an experimentally observed increase of the critical electric field with decreasing size of the injecting contact. Numerical results are presented for dc and ac biased insulators.","PeriodicalId":13148,"journal":{"name":"ICSD'98. Proceedings of the 1998 IEEE 6th International Conference on Conduction and Breakdown in Solid Dielectrics (Cat. No.98CH36132)","volume":"16 1","pages":"69-72"},"PeriodicalIF":0.0,"publicationDate":"1998-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89431007","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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