Pub Date : 2024-09-04DOI: 10.1109/LED.2024.3454267
Zihao Dai;Jianxun Wang;Yixin Wan;Xinjie Li;Jingzhi Zheng;Yuan Fang;Hao Li;Yong Luo
To break limitation in the bandwidth of traditional SB-TWTs at high power of its operation, an innovative Double-Ridge Staggered Vane (DRSV) Structure is proposed and verified as an effective solution for ultra-wideband high-power TWT in the millimeter wave and terahertz. DRSV is based on the staggered double-vane slow-wave structure (SDV-SWS) and introduces side slots on both sides, which changes the circuit characteristics. This novel SWS allows for a significant expansion in operating bandwidth while maintaining high power output. In addition, combined with an all-period phase velocity tapering optimization method, the bandwidth and efficiency can be further improved.The ultra-wideband amplification characteristics were verified using particle in-cell (PIC) simulations at Ka-band. Additionally, experimental validation was performed on the dispersion properties. The results demonstrate that the 3-dB bandwidth surpasses 13.5 GHz, ranging from 20 to 33.5 GHz, corresponding to a relative bandwidth of 50.5%.
{"title":"Achieving Ultra-Wide Band Operation of the High-Power Sheet Beam TWT by Using Novel Double-Ridge Staggered Vane Structure","authors":"Zihao Dai;Jianxun Wang;Yixin Wan;Xinjie Li;Jingzhi Zheng;Yuan Fang;Hao Li;Yong Luo","doi":"10.1109/LED.2024.3454267","DOIUrl":"10.1109/LED.2024.3454267","url":null,"abstract":"To break limitation in the bandwidth of traditional SB-TWTs at high power of its operation, an innovative Double-Ridge Staggered Vane (DRSV) Structure is proposed and verified as an effective solution for ultra-wideband high-power TWT in the millimeter wave and terahertz. DRSV is based on the staggered double-vane slow-wave structure (SDV-SWS) and introduces side slots on both sides, which changes the circuit characteristics. This novel SWS allows for a significant expansion in operating bandwidth while maintaining high power output. In addition, combined with an all-period phase velocity tapering optimization method, the bandwidth and efficiency can be further improved.The ultra-wideband amplification characteristics were verified using particle in-cell (PIC) simulations at Ka-band. Additionally, experimental validation was performed on the dispersion properties. The results demonstrate that the 3-dB bandwidth surpasses 13.5 GHz, ranging from 20 to 33.5 GHz, corresponding to a relative bandwidth of 50.5%.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"45 11","pages":"2205-2208"},"PeriodicalIF":4.1,"publicationDate":"2024-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142222908","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
AlGaN-based heterojunction field-effect phototransistors featuring high gain and high speed often suffer from serious persistent photoconductivity (PPC). The PPC effect leads to long-term recovery after signal excitation, which not only restricts response speed but also affects the stability and reliability of photoresponse. Herein, in-situ SiNx passivation was used to mitigate the PPC effect in solar-blind AlGaN heterojunction field-effect phototransistors. By the passivation, the decay time constant decreases from 0.79 s and 0.30 s associated with two trap levels to 0.18 s associated with one trap level. Moreover, the response current under periodic weak illumination is significantly stabilized. The device dark current is also reduced by more than one order of magnitude, alongside remarkably improved on-chip uniformity. These improvements are attributed to the reduction of deep acceptor defects on the AlGaN surface by the in-situ SiNx passivation.
{"title":"Effective Mitigation of Persistent Photoconductivity in AlGaN Solar-Blind Field-Effect Phototransistors via In-Situ SiNx Passivation","authors":"Zhuoya Peng;Mian Wu;Zesheng Lv;Shouqiang Yang;Mengyao Song;Yv Yin;Hao Jiang","doi":"10.1109/LED.2024.3453913","DOIUrl":"10.1109/LED.2024.3453913","url":null,"abstract":"AlGaN-based heterojunction field-effect phototransistors featuring high gain and high speed often suffer from serious persistent photoconductivity (PPC). The PPC effect leads to long-term recovery after signal excitation, which not only restricts response speed but also affects the stability and reliability of photoresponse. Herein, in-situ SiNx passivation was used to mitigate the PPC effect in solar-blind AlGaN heterojunction field-effect phototransistors. By the passivation, the decay time constant decreases from 0.79 s and 0.30 s associated with two trap levels to 0.18 s associated with one trap level. Moreover, the response current under periodic weak illumination is significantly stabilized. The device dark current is also reduced by more than one order of magnitude, alongside remarkably improved on-chip uniformity. These improvements are attributed to the reduction of deep acceptor defects on the AlGaN surface by the in-situ SiNx passivation.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"45 11","pages":"2074-2077"},"PeriodicalIF":4.1,"publicationDate":"2024-09-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142222910","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This letter presents the bulk diamond field-effect transistor (FET) with the highest current value reported at this moment on 3.5 $times $ 3.5 mm2 Ib diamond substrate. The goal was to drastically increase the current of this type of device by increasing the total gate width thanks to an interdigitated architecture and homogeneous growth properties. The device develops a total gate width of 14.7 mm, with 24 paralleled fingers and a current higher than 50 mA at V $_{text {DS}} = -15$ V and V $_{text {GS}} =0$ V, at 450 K and under illumination. Its specific ON-resistance and threshold voltage are respectively 608 m $Omega $ .cm2, 50 V. Resistivity of 3.6 m $Omega $ .cm for a heavily boron-doped (p++)-diamond layer and $1.52Omega cdot $ cm for a $2.10^{{17}}$ cm−3 p-doped diamond layer were extracted at 450 K. This study indicates that it is possible to drastically improve the ON-state of FETs by using an interdigitated architecture, while using homogeneous large size diamond layers grown by CVD.
这篇文章介绍了目前报道的电流值最高的体金刚石场效应晶体管（FET），其基底为 3.5 美元/次的 3.5 mm2 Ib 金刚石。我们的目标是通过增加栅极总宽度来大幅提高此类器件的电流，这要归功于相互咬合的结构和均匀的生长特性。该器件的栅极总宽度为 14.7 mm，有 24 个并联指，在 450 K 和照明条件下，当 V $_{text {DS}} = -15$ V 和 V $_{text {GS}} =0$ V 时，电流高于 50 mA。其比导通电阻和阈值电压分别为 608 m $Omega $ .cm2、50 V。在 450 K 时，重度掺硼（p++）金刚石层的电阻率为 3.6 m $Omega $ .cm，2.10^{{17}}$ cm-3 p 掺杂金刚石层的电阻率为 1.52 $Omega cdot $ cm。这项研究表明，在使用通过 CVD 生长的均匀大尺寸金刚石层的同时，通过使用相互咬合的结构可以大幅改善场效应晶体管的导通状态。
{"title":"Over 50 mA Current in Interdigitated Diamond Field Effect Transistor","authors":"Damien Michez;Juliette Letellier;Imane Hammas;Julien Pernot;Nicolas Rouger","doi":"10.1109/LED.2024.3453504","DOIUrl":"10.1109/LED.2024.3453504","url":null,"abstract":"This letter presents the bulk diamond field-effect transistor (FET) with the highest current value reported at this moment on 3.5\u0000<inline-formula> <tex-math>$times $ </tex-math></inline-formula>\u00003.5 mm2 Ib diamond substrate. The goal was to drastically increase the current of this type of device by increasing the total gate width thanks to an interdigitated architecture and homogeneous growth properties. The device develops a total gate width of 14.7 mm, with 24 paralleled fingers and a current higher than 50 mA at V \u0000<inline-formula> <tex-math>$_{text {DS}} = -15$ </tex-math></inline-formula>\u0000 V and V \u0000<inline-formula> <tex-math>$_{text {GS}} =0$ </tex-math></inline-formula>\u0000 V, at 450 K and under illumination. Its specific ON-resistance and threshold voltage are respectively 608 m \u0000<inline-formula> <tex-math>$Omega $ </tex-math></inline-formula>\u0000.cm2, 50 V. Resistivity of 3.6 m\u0000<inline-formula> <tex-math>$Omega $ </tex-math></inline-formula>\u0000.cm for a heavily boron-doped (p++)-diamond layer and \u0000<inline-formula> <tex-math>$1.52Omega cdot $ </tex-math></inline-formula>\u0000cm for a \u0000<inline-formula> <tex-math>$2.10^{{17}}$ </tex-math></inline-formula>\u0000 cm−3 p-doped diamond layer were extracted at 450 K. This study indicates that it is possible to drastically improve the ON-state of FETs by using an interdigitated architecture, while using homogeneous large size diamond layers grown by CVD.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"45 11","pages":"2058-2061"},"PeriodicalIF":4.1,"publicationDate":"2024-09-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142222906","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This letter demonstrates a high-responsivity piezoelectric resonant MEMS accelerometer using a bent-TBTF resonator. Different from the conventional bent-beam resonant accelerometers, the proposed device uses two auxiliary supporting beams that can be designed to control the initial bending shape of the TBTF resonator and thus alter its force sensing behavior. These auxiliary supporting beams provide a new design freedom for manipulating the linear operation range of the device, which was considered an inherent issue for the resonant accelerometers based on bent-beam sensing. The validity of the proposed design is verified by comparing the measured results to the finite-element simulations. The demonstrated bent-TBTF resonant accelerometer exhibits responsivity as large as 2.92 kHz/g with footprint of 3.1 mm $times 1.4$ mm. By proper design of aluminum coverage of the auxiliary supporting beams, the proposed device achieves good nonlinearity factor of 2.7% in the interested acceleration range from −6 g to 6 g.
{"title":"A Bent-TBTF Resonant MEMS Accelerometer Using Auxiliary Supporting Beams","authors":"Cheng Tu;Yi-Ming Pan;Zenghui Wang;Xiao-Sheng Zhang","doi":"10.1109/LED.2024.3453324","DOIUrl":"10.1109/LED.2024.3453324","url":null,"abstract":"This letter demonstrates a high-responsivity piezoelectric resonant MEMS accelerometer using a bent-TBTF resonator. Different from the conventional bent-beam resonant accelerometers, the proposed device uses two auxiliary supporting beams that can be designed to control the initial bending shape of the TBTF resonator and thus alter its force sensing behavior. These auxiliary supporting beams provide a new design freedom for manipulating the linear operation range of the device, which was considered an inherent issue for the resonant accelerometers based on bent-beam sensing. The validity of the proposed design is verified by comparing the measured results to the finite-element simulations. The demonstrated bent-TBTF resonant accelerometer exhibits responsivity as large as 2.92 kHz/g with footprint of 3.1 mm \u0000<inline-formula> <tex-math>$times 1.4$ </tex-math></inline-formula>\u0000 mm. By proper design of aluminum coverage of the auxiliary supporting beams, the proposed device achieves good nonlinearity factor of 2.7% in the interested acceleration range from −6 g to 6 g.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"45 11","pages":"2177-2180"},"PeriodicalIF":4.1,"publicationDate":"2024-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142222916","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-02DOI: 10.1109/LED.2024.3453291
Yonglong Pu;Huabin Yang;Meng Shi;Qirui Zhang;Na Zhou;Chengjun Huang;Haiyang Mao
This work presents a MEMS thermopile integrated with Al nanoparticle-decorated nanoforests (Al@NFs), fabricated using a CMOS compatible process. Due to the light trapping effect and the localized surface plasmon resonance effect introduced by the Al@NFs, ultraviolet (UV) optical energy can be effectively absorbed and converted into heat energy. As a result, a broad UV detection range of the device is achieved. Compared with the pristine thermopile without such Al@NFs, the voltage response of the device is improved by 2.0 to 16.2 times within a wavelength range of 240–400 nm. With such a superiority, the as-prepared device is capable of UV detection for practical applications, including the quality discrimination of different sunscreens under UV radiation.
{"title":"A MEMS Thermopile With Al Decorated Nanoforests Capable of Broadband UV Detection","authors":"Yonglong Pu;Huabin Yang;Meng Shi;Qirui Zhang;Na Zhou;Chengjun Huang;Haiyang Mao","doi":"10.1109/LED.2024.3453291","DOIUrl":"10.1109/LED.2024.3453291","url":null,"abstract":"This work presents a MEMS thermopile integrated with Al nanoparticle-decorated nanoforests (Al@NFs), fabricated using a CMOS compatible process. Due to the light trapping effect and the localized surface plasmon resonance effect introduced by the Al@NFs, ultraviolet (UV) optical energy can be effectively absorbed and converted into heat energy. As a result, a broad UV detection range of the device is achieved. Compared with the pristine thermopile without such Al@NFs, the voltage response of the device is improved by 2.0 to 16.2 times within a wavelength range of 240–400 nm. With such a superiority, the as-prepared device is capable of UV detection for practical applications, including the quality discrimination of different sunscreens under UV radiation.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"45 11","pages":"2170-2172"},"PeriodicalIF":4.1,"publicationDate":"2024-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142222935","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-02DOI: 10.1109/LED.2024.3453111
Si-Meng Chen;Hirofumi Nishida;Sung-Lin Tsai;Takuya Hoshii;Kazuo Tsutsui;Hitoshi Wakabayashi;Edward Yi Chang;Kuniyuki Kakushima
The effect of oxygen-atom incorporation in 50-nm-thick ferroelectric Al0.89Sc0.11N films was investigated. The fabricated films exhibited a high remanent polarization ( ${P}_{text {r}})$ exceeding $100~mu $ C/cm2, irrespective of the oxygen content studied. An increase in oxygen content led to a decrease in coercive field ( ${E}_{text {c}})$ from 5.2 to 4.4 MV/cm and an increase in the static dielectric constant ( $varepsilon _{text {i}})$ from 15 to 19. This was likely due to the formation of substitute O and Al vacancy complex defects to ease N-atom displacement. Additionally, higher oxygen content resulted in imprint effect elimination, leakage current reduction, and breakdown field ( ${E}_{text {BD}})$ enhancement, which are beneficial for ferroelectric memory applications. The gentle and linear relationship between ${P}_{text {r}}$ and the electric field ( ${E})$ enabled precise control of partial polarization switching, supporting multi-level operation. Although issues related to fatigue and endurance cycles remain to be addressed, the high ${P}_{text {r}}$ and potential for multi-level operation are suitable for crossbar-based analog in-memory computing.
{"title":"Oxygen-Atom Incorporated Ferroelectric AlScN Capacitors for Multi-Level Operation","authors":"Si-Meng Chen;Hirofumi Nishida;Sung-Lin Tsai;Takuya Hoshii;Kazuo Tsutsui;Hitoshi Wakabayashi;Edward Yi Chang;Kuniyuki Kakushima","doi":"10.1109/LED.2024.3453111","DOIUrl":"10.1109/LED.2024.3453111","url":null,"abstract":"The effect of oxygen-atom incorporation in 50-nm-thick ferroelectric Al0.89Sc0.11N films was investigated. The fabricated films exhibited a high remanent polarization (\u0000<inline-formula> <tex-math>${P}_{text {r}})$ </tex-math></inline-formula>\u0000 exceeding \u0000<inline-formula> <tex-math>$100~mu $ </tex-math></inline-formula>\u0000C/cm2, irrespective of the oxygen content studied. An increase in oxygen content led to a decrease in coercive field (\u0000<inline-formula> <tex-math>${E}_{text {c}})$ </tex-math></inline-formula>\u0000 from 5.2 to 4.4 MV/cm and an increase in the static dielectric constant (\u0000<inline-formula> <tex-math>$varepsilon _{text {i}})$ </tex-math></inline-formula>\u0000 from 15 to 19. This was likely due to the formation of substitute O and Al vacancy complex defects to ease N-atom displacement. Additionally, higher oxygen content resulted in imprint effect elimination, leakage current reduction, and breakdown field (\u0000<inline-formula> <tex-math>${E}_{text {BD}})$ </tex-math></inline-formula>\u0000 enhancement, which are beneficial for ferroelectric memory applications. The gentle and linear relationship between \u0000<inline-formula> <tex-math>${P}_{text {r}}$ </tex-math></inline-formula>\u0000 and the electric field (\u0000<inline-formula> <tex-math>${E})$ </tex-math></inline-formula>\u0000 enabled precise control of partial polarization switching, supporting multi-level operation. Although issues related to fatigue and endurance cycles remain to be addressed, the high \u0000<inline-formula> <tex-math>${P}_{text {r}}$ </tex-math></inline-formula>\u0000 and potential for multi-level operation are suitable for crossbar-based analog in-memory computing.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"45 11","pages":"2090-2093"},"PeriodicalIF":4.1,"publicationDate":"2024-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10662902","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142222918","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In this study, TPU/MCNTs/PANI/GQDs (TMPG) composites were synthesized through electrospinning and in-situ polymerization, developing a flexible sensor for reliable NH3 detection at room temperature (RT). At 60% relative humidity, the TMPG sensor shows a response of 51.3% to 10 ppm NH3, attributed to unique three-dimensional (3D) porous structure and enhanced PANI protonation. Moreover, the sensor exhibits good selectivity and repeatability, performing well even after 1000 bending cycles. It has also been effectively applied in monitoring mutton freshness and wearable NH3 safety alarming. This research provides an opportunity for designing a high-performance NH3 gas detection platform for flexible wearable electronics.
{"title":"Adaptable Ammonia Detection With QDs-Sensitized Polyaniline Mat: A Flexible Gas Sensor for Diverse Applications","authors":"Long Yang;Ze Wang;Fanchong Zeng;Zitong Kan;Chencheng Hu;Yu Qi;Biao Dong;Xue Bai;Hongwei Song;Lin Xu","doi":"10.1109/LED.2024.3452761","DOIUrl":"10.1109/LED.2024.3452761","url":null,"abstract":"In this study, TPU/MCNTs/PANI/GQDs (TMPG) composites were synthesized through electrospinning and in-situ polymerization, developing a flexible sensor for reliable NH3 detection at room temperature (RT). At 60% relative humidity, the TMPG sensor shows a response of 51.3% to 10 ppm NH3, attributed to unique three-dimensional (3D) porous structure and enhanced PANI protonation. Moreover, the sensor exhibits good selectivity and repeatability, performing well even after 1000 bending cycles. It has also been effectively applied in monitoring mutton freshness and wearable NH3 safety alarming. This research provides an opportunity for designing a high-performance NH3 gas detection platform for flexible wearable electronics.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"45 11","pages":"2185-2188"},"PeriodicalIF":4.1,"publicationDate":"2024-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142222907","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
As quantum computing evolves from small-scale qubit systems to more complex large-scale processors, the demand for individual qubit control and scalability will lead to the use of 3D integration and packaging technologies. Although advances in 3D integration in traditional CMOS technology are notable at room temperature, its potential in cryogenic environments, especially in quantum computing, remains largely unexplored. Superconducting qubit technology demands improvements in qubit relaxation and coherence time. Tantalum (Ta), renowned for its minimal loss, remarkable coherence time and superior stability, emerges as a promising candidate for superconducting materials. This study presents a novel approach by utilizing Ta-Ta thermo-compression bonding to create superconducting joints between wafers for vertical integration for the first time. A successful bonding temperature (500 °C) and pressure (0.3 MPa) results in the emergence of $alpha $ -tantalum, which improves the coherence time significantly as reported earlier. The shear strength test shows a bond strength of 200 MPa which is a clear indication of a good bond between the two layers. Hence, we demonstrate the feasibility of achieving 3D integration of superconducting chips using this approach, thus opening doors for inventive quantum computing architectures.
{"title":"Novel Wafer-Level Ta-Ta Direct Thermocompression Bonding for 3D Integration of Superconducting Interconnects for Scalable Quantum Computing System","authors":"Harsh Mishra;Satish Bonam;Vinit Kumar;Shiv Govind Singh","doi":"10.1109/LED.2024.3453174","DOIUrl":"10.1109/LED.2024.3453174","url":null,"abstract":"As quantum computing evolves from small-scale qubit systems to more complex large-scale processors, the demand for individual qubit control and scalability will lead to the use of 3D integration and packaging technologies. Although advances in 3D integration in traditional CMOS technology are notable at room temperature, its potential in cryogenic environments, especially in quantum computing, remains largely unexplored. Superconducting qubit technology demands improvements in qubit relaxation and coherence time. Tantalum (Ta), renowned for its minimal loss, remarkable coherence time and superior stability, emerges as a promising candidate for superconducting materials. This study presents a novel approach by utilizing Ta-Ta thermo-compression bonding to create superconducting joints between wafers for vertical integration for the first time. A successful bonding temperature (500 °C) and pressure (0.3 MPa) results in the emergence of \u0000<inline-formula> <tex-math>$alpha $ </tex-math></inline-formula>\u0000-tantalum, which improves the coherence time significantly as reported earlier. The shear strength test shows a bond strength of 200 MPa which is a clear indication of a good bond between the two layers. Hence, we demonstrate the feasibility of achieving 3D integration of superconducting chips using this approach, thus opening doors for inventive quantum computing architectures.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"45 11","pages":"2221-2224"},"PeriodicalIF":4.1,"publicationDate":"2024-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142222909","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-02DOI: 10.1109/LED.2024.3452776
Been Kwak;Jangsaeng Kim;Kitae Lee;Wonjun Shin;Daewoong Kwon
This study investigates low-frequency noise (LFN) and random telegraph noise (RTN) characteristics of hafnium-zirconium oxide (HZO) ferroelectric field-effect transistors with recessed channels (R-FeFETs) from a reliability analysis perspective. As the delay time increases after the program (PGM), the threshold voltage ( ${V}_{text {TH}}text {)}$ is shifted by trapped electron detrapping and does not saturate. From LFN measurement, it is revealed that the origin of 1/f noise in the R-FeFETs is carrier number fluctuation. RTN is also observed with a distinct corner frequency ( ${f}_{text {c}}~approx ~480$ Hz). It is confirmed that the trap is distributed locally at the DE/FE interface (z $approx ~1.5$ nm) due to the structural specificity of R-FeFETs, resulting in RTN. The results of this work provide valuable insight for understanding the reliability issue of R-FeFETs.
{"title":"Low-Frequency Noise Characteristics of Recessed Channel Ferroelectric Field-Effect Transistors","authors":"Been Kwak;Jangsaeng Kim;Kitae Lee;Wonjun Shin;Daewoong Kwon","doi":"10.1109/LED.2024.3452776","DOIUrl":"10.1109/LED.2024.3452776","url":null,"abstract":"This study investigates low-frequency noise (LFN) and random telegraph noise (RTN) characteristics of hafnium-zirconium oxide (HZO) ferroelectric field-effect transistors with recessed channels (R-FeFETs) from a reliability analysis perspective. As the delay time increases after the program (PGM), the threshold voltage (\u0000<inline-formula> <tex-math>${V}_{text {TH}}text {)}$ </tex-math></inline-formula>\u0000 is shifted by trapped electron detrapping and does not saturate. From LFN measurement, it is revealed that the origin of 1/f noise in the R-FeFETs is carrier number fluctuation. RTN is also observed with a distinct corner frequency (\u0000<inline-formula> <tex-math>${f}_{text {c}}~approx ~480$ </tex-math></inline-formula>\u0000 Hz). It is confirmed that the trap is distributed locally at the DE/FE interface (z \u0000<inline-formula> <tex-math>$approx ~1.5$ </tex-math></inline-formula>\u0000 nm) due to the structural specificity of R-FeFETs, resulting in RTN. The results of this work provide valuable insight for understanding the reliability issue of R-FeFETs.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"45 11","pages":"2118-2121"},"PeriodicalIF":4.1,"publicationDate":"2024-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142222913","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A two-terminal npn device based on 4H-SiC has been employed as a radiation detector for the first time. This device was designed as a vertical npn structure with a sensitive area of up to 1 cm2, and the thickness of the sensitive layer was about $30~mu $ m. The detector exhibited a low dark current of $sim ~0.12$ nA $cdot $ cm $^{-{2}}$ with a fully depleted sensitive region at 200 V. The sensitivity of unit area of the detector achieved $36.67~mu $ C $cdot $ Gy $^{-{1}} cdot $ cm $^{-{2}}$ ( $28.09~mu $ A @ 0.766 Gy/s) to X-ray illumination (generated by bremsstrahlung with a tungsten target with tube voltage 30 kV) at 200 V, which was attributed to the amplification mechanism of the npn structure. Compared with the response characteristics of a SiC-PiN detector with the same sensitive volume, the gain of the two-terminal SiC npn detector was estimated to be 11.46 at 200 V. Specifically, the internal gain of the detector increased with the X-ray dose rate, where the X-ray photocurrent worked as the base current in the BJT devices. The internal gain also increased with the bias voltage due to the Early effect. Moreover, the two-terminal SiC npn detectors had a good switching response to X-rays and showed great potential in the applications of radiation detection.
基于 4H-SiC 的双端 npn 器件首次被用作辐射探测器。该器件设计为垂直 npn 结构，灵敏区面积达 1 cm2，灵敏层厚度约为 $30~mu$m。cdot $ cm $^{-{2}}$ ( $28.09~mu $ A @ 0.766 Gy/s) ，这归功于 npn 结构的放大机制。与具有相同灵敏体积的 SiC-PiN 检测器的响应特性相比，在 200 V 电压下，双端 SiC npn 检测器的增益估计为 11.46。具体而言，检测器的内部增益随 X 射线剂量率的增加而增加，其中 X 射线光电流在 BJT 器件中起基极电流的作用。由于厄尔效应，内部增益也随偏置电压的增加而增加。此外，双端 SiC npn 探测器对 X 射线具有良好的开关响应，在辐射探测应用中显示出巨大的潜力。
{"title":"X-Ray Detector With Internal Gain Based on a SiC npn Structure","authors":"Jing Wang;Liang Chen;Song Bai;Leidang Zhou;Fangbao Wang;Silong Zhang;Tingting Fan;Runhua Huang;Shaohua Yang;Geng Tian;Xiaoping Ouyang","doi":"10.1109/LED.2024.3451623","DOIUrl":"10.1109/LED.2024.3451623","url":null,"abstract":"A two-terminal npn device based on 4H-SiC has been employed as a radiation detector for the first time. This device was designed as a vertical npn structure with a sensitive area of up to 1 cm2, and the thickness of the sensitive layer was about \u0000<inline-formula> <tex-math>$30~mu $ </tex-math></inline-formula>\u0000m. The detector exhibited a low dark current of \u0000<inline-formula> <tex-math>$sim ~0.12$ </tex-math></inline-formula>\u0000 nA\u0000<inline-formula> <tex-math>$cdot $ </tex-math></inline-formula>\u0000cm\u0000<inline-formula> <tex-math>$^{-{2}}$ </tex-math></inline-formula>\u0000 with a fully depleted sensitive region at 200 V. The sensitivity of unit area of the detector achieved \u0000<inline-formula> <tex-math>$36.67~mu $ </tex-math></inline-formula>\u0000C\u0000<inline-formula> <tex-math>$cdot $ </tex-math></inline-formula>\u0000Gy\u0000<inline-formula> <tex-math>$^{-{1}} cdot $ </tex-math></inline-formula>\u0000cm\u0000<inline-formula> <tex-math>$^{-{2}}$ </tex-math></inline-formula>\u0000 (\u0000<inline-formula> <tex-math>$28.09~mu $ </tex-math></inline-formula>\u0000A @ 0.766 Gy/s) to X-ray illumination (generated by bremsstrahlung with a tungsten target with tube voltage 30 kV) at 200 V, which was attributed to the amplification mechanism of the npn structure. Compared with the response characteristics of a SiC-PiN detector with the same sensitive volume, the gain of the two-terminal SiC npn detector was estimated to be 11.46 at 200 V. Specifically, the internal gain of the detector increased with the X-ray dose rate, where the X-ray photocurrent worked as the base current in the BJT devices. The internal gain also increased with the bias voltage due to the Early effect. Moreover, the two-terminal SiC npn detectors had a good switching response to X-rays and showed great potential in the applications of radiation detection.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"45 11","pages":"2142-2145"},"PeriodicalIF":4.1,"publicationDate":"2024-08-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142222911","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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