This letter presents the first demonstration of high-efficiency phase-locking among five magnetrons for large-scale array applications. The array is organized into two modules, with phase-locking achieved through external waveguide-based coupling. Validation experiments confirm that all five magnetrons operate at a locked frequency of 2.462 GHz. Time-domain signal sampling and analysis reveal that the phase difference between nonadjacent magnetrons across different modules remains stable over time, with inter-pulse phase fluctuations constrained within ±4°. The overall phase-locking efficiency reaches 87.8%. To ensure flexibility and scalability, the array adopts a ring-series coupled topology combined with a modular assembly strategy, making the design particularly suited for large-scale magnetron array applications.
{"title":"Demonstration of a Scalable Magnetron Array Through Extracavity Coupling","authors":"Wenlong Li;Hailong Li;Wanshan Hou;Hui Wang;Yu Qin;Haixia Liu;Licun Wang;Bo Li;Changnian Li;Maoyan Wang;Liangjie Bi;Bin Wang;Yong Yin;Lin Meng","doi":"10.1109/LED.2025.3601902","DOIUrl":"https://doi.org/10.1109/LED.2025.3601902","url":null,"abstract":"This letter presents the first demonstration of high-efficiency phase-locking among five magnetrons for large-scale array applications. The array is organized into two modules, with phase-locking achieved through external waveguide-based coupling. Validation experiments confirm that all five magnetrons operate at a locked frequency of 2.462 GHz. Time-domain signal sampling and analysis reveal that the phase difference between nonadjacent magnetrons across different modules remains stable over time, with inter-pulse phase fluctuations constrained within ±4°. The overall phase-locking efficiency reaches 87.8%. To ensure flexibility and scalability, the array adopts a ring-series coupled topology combined with a modular assembly strategy, making the design particularly suited for large-scale magnetron array applications.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 10","pages":"1877-1880"},"PeriodicalIF":4.5,"publicationDate":"2025-08-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145141642","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-08-21DOI: 10.1109/LED.2025.3601190
Xiaotong Mao;Xiaofeng Jia;Longyu Sun;Fei Zhao;Haoyan Liu;Shengkai Wang;Xiaolei Wang;Yongliang Li
The multiple flat band voltage (${mathrm{V}}_{text {FB}}text {)}$ fine-tuning and low interface state density (${mathrm{D}}_{text {it}}text {)}$ via a novel La(iPr2-FMD)3 (LaFMD) and Al2O3 dual dipoles engineering technique in SiGe pMOS stacked nanowire transistors are investigated. Utilizing the opposite polarities of the dual dipoles and their respective distances from the SiGe, it achieves positive VFB shifts of 290 mV and 110 mV, and negative VFB shifts of 130 mV and 330 mV. Meanwhile, compared to untreated sample, all of them exhibit lower Dit due to the reduced formation of Ge lower-valence oxides in the interface layer (IL). The application of this technique in SiGe channel gate-all-around (GAA) transistors results in superior threshold voltage (${mathrm{V}}_{text {T}}text {)}$ modulation and subthreshold swing (SS). As a result, this technique can be considered as a promising candidate for high performance and low power consumption applications of SiGe channel GAA transistors.
{"title":"VFB Tuning and Dit Modulation Using LaFMD and Al2O3 Dual Dipoles in PMOS Stacked Nanowire Transistors","authors":"Xiaotong Mao;Xiaofeng Jia;Longyu Sun;Fei Zhao;Haoyan Liu;Shengkai Wang;Xiaolei Wang;Yongliang Li","doi":"10.1109/LED.2025.3601190","DOIUrl":"https://doi.org/10.1109/LED.2025.3601190","url":null,"abstract":"The multiple flat band voltage (<inline-formula> <tex-math>${mathrm{V}}_{text {FB}}text {)}$ </tex-math></inline-formula> fine-tuning and low interface state density (<inline-formula> <tex-math>${mathrm{D}}_{text {it}}text {)}$ </tex-math></inline-formula> via a novel La(iPr2-FMD)3 (LaFMD) and Al2O3 dual dipoles engineering technique in SiGe pMOS stacked nanowire transistors are investigated. Utilizing the opposite polarities of the dual dipoles and their respective distances from the SiGe, it achieves positive VFB shifts of 290 mV and 110 mV, and negative VFB shifts of 130 mV and 330 mV. Meanwhile, compared to untreated sample, all of them exhibit lower Dit due to the reduced formation of Ge lower-valence oxides in the interface layer (IL). The application of this technique in SiGe channel gate-all-around (GAA) transistors results in superior threshold voltage (<inline-formula> <tex-math>${mathrm{V}}_{text {T}}text {)}$ </tex-math></inline-formula> modulation and subthreshold swing (SS). As a result, this technique can be considered as a promising candidate for high performance and low power consumption applications of SiGe channel GAA transistors.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 10","pages":"1689-1692"},"PeriodicalIF":4.5,"publicationDate":"2025-08-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11133603","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145315346","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The high Schottky barrier height (SBH) of p-type germanium (Ge) with highly conductive Cerium(Ce)-doped hydrogenated indium oxide (ICO:H) has been investigated through temperature-dependent capacitance-voltage (C-V) and current-voltage(I-V) characteristics. The reverse bias C-V measurements revealed that the SBH is 0.412 eV at 300 K, indicating Fermi-level de-pinning. As the temperature decreased to 80 K, the SBH increases to 0.471 eV. Using the thermal emission theory of the forward I-V characteristic, the zero-bias SBH decreases from 0.494 eV at 300 K to 0.263 eV at 80 K. This variation is well explained by considering a Gaussian distribution of the SBH. From the modified Richardson plot, we obtained the Richardson constant (A${}^{boldsymbol {ast }}$ ) of 41.6 Acm${}^{mathbf {-{2}}}$ K${}^{mathbf {-{2}}}$ , which is extremely close to the theoretical value of 40.8 Acm${}^{mathbf {-{2}}}$ K${}^{mathbf {-{2}}}$ for holes in p-type Ge, suggesting ICO:H/p-Ge interface exhibits fairly ideal Schottky barrier behavior.
{"title":"High Schottky Barrier Height of Cerium-Doped Hydrogenated Indium Oxide/p-Type Ge Diodes","authors":"Tatsuro Maeda;Hiroyuki Ishii;Hiroto Ishii;Chia-Tsong Chen;Kouya Kudou;Takashi Koida;Wen Hsin Chang","doi":"10.1109/LED.2025.3601090","DOIUrl":"https://doi.org/10.1109/LED.2025.3601090","url":null,"abstract":"The high Schottky barrier height (SBH) of p-type germanium (Ge) with highly conductive Cerium(Ce)-doped hydrogenated indium oxide (ICO:H) has been investigated through temperature-dependent capacitance-voltage (C-V) and current-voltage(I-V) characteristics. The reverse bias C-V measurements revealed that the SBH is 0.412 eV at 300 K, indicating Fermi-level de-pinning. As the temperature decreased to 80 K, the SBH increases to 0.471 eV. Using the thermal emission theory of the forward I-V characteristic, the zero-bias SBH decreases from 0.494 eV at 300 K to 0.263 eV at 80 K. This variation is well explained by considering a Gaussian distribution of the SBH. From the modified Richardson plot, we obtained the Richardson constant (A<inline-formula> <tex-math>${}^{boldsymbol {ast }}$ </tex-math></inline-formula>) of 41.6 Acm<inline-formula> <tex-math>${}^{mathbf {-{2}}}$ </tex-math></inline-formula> K<inline-formula> <tex-math>${}^{mathbf {-{2}}}$ </tex-math></inline-formula>, which is extremely close to the theoretical value of 40.8 Acm<inline-formula> <tex-math>${}^{mathbf {-{2}}}$ </tex-math></inline-formula> K<inline-formula> <tex-math>${}^{mathbf {-{2}}}$ </tex-math></inline-formula> for holes in p-type Ge, suggesting ICO:H/p-Ge interface exhibits fairly ideal Schottky barrier behavior.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 10","pages":"1681-1684"},"PeriodicalIF":4.5,"publicationDate":"2025-08-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145315344","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A HfO2 -SiO2 hybrid bonding technology applied for three-dimensional memristor integration is developed, and the bonding mechanism is deeply studied. This bonding method mainly includes three steps: 1) surface treatment of the bonding interface of HfO2 and SiO2 using Ar plasma and 3% ammonia solution treatment, which increases the hydroxyl density on the bonding surface; 2) pre-bonding at 100°C in an atmospheric environment to remove water molecule from the suspended hydroxyl group at the HfO2 -SiO2 interface; and 3) a laser rapid annealing process (LRAP) at 400°C for 5 seconds to further strengthen the bond strength of Hf-O-Si chemical bonds formed at the bonding interface. This technology enables the successful fabrication of a novel 3D memristors. Furthermore, this work offers innovative design strategies for next-generation 3D architecture devices.
{"title":"HfO₂-SiO₂ Hybrid Bonding Technology Applied for High-Density 3D Integrated Devices","authors":"Jinzhu Li;Yanming Liu;Ziyu Liu;He Tian;Yabin Sun;David Wei Zhang","doi":"10.1109/LED.2025.3601394","DOIUrl":"https://doi.org/10.1109/LED.2025.3601394","url":null,"abstract":"A HfO2 -SiO2 hybrid bonding technology applied for three-dimensional memristor integration is developed, and the bonding mechanism is deeply studied. This bonding method mainly includes three steps: 1) surface treatment of the bonding interface of HfO2 and SiO2 using Ar plasma and 3% ammonia solution treatment, which increases the hydroxyl density on the bonding surface; 2) pre-bonding at 100°C in an atmospheric environment to remove water molecule from the suspended hydroxyl group at the HfO2 -SiO2 interface; and 3) a laser rapid annealing process (LRAP) at 400°C for 5 seconds to further strengthen the bond strength of Hf-O-Si chemical bonds formed at the bonding interface. This technology enables the successful fabrication of a novel 3D memristors. Furthermore, this work offers innovative design strategies for next-generation 3D architecture devices.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 10","pages":"1917-1919"},"PeriodicalIF":4.5,"publicationDate":"2025-08-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145141650","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-08-20DOI: 10.1109/LED.2025.3598843
Zhiyu Chen;Yuan Zheng;Jingrui Duan;Zhihua Xing;Chong Guo;Liangcheng Yi;Yubin Gong
A low-loss broadband pill-box window for Terahertz (THz) Vacuum Electron Devices (VEDs) is proposed in this letter. To enlarge the THz vacuum window geometric size benefiting the fabrication process, a novel strong coupling over-mode operation has been proposed and employed without introducing extra oscillation points over a broad operation band. At the same time, the monocrystalline diamond (MD) layer is used to withstand stresses during the brazing process as well as the atmospheric pressure. The window frames use an Oxygen Free Copper (OFC) - Kovar heterogeneous integrated structure, ensuring both vacuum tightness and low-loss transmission. The fabricated device demonstrated exceptional vacuum tightness, with a measured leak rate of ${6}.{95}times {10}^{text {-10}}$ Pa$cdot $ m3/s. The cold test result of the sealed THz MD window demonstrates a recorded low insertion loss (−3.67 dB) at 1 THz, and a 70 GHz bandwidth (0.960 THz – 1.030 THz). The cold test measurements closely match simulation predictions, validating the effectiveness of the strong coupling design in suppressing oscillatory points and the heterogeneous integrated structure in reducing the transmission loss.
{"title":"Investigation of a Low-Loss Broadband Pill-Box Window Operation Over 1THz","authors":"Zhiyu Chen;Yuan Zheng;Jingrui Duan;Zhihua Xing;Chong Guo;Liangcheng Yi;Yubin Gong","doi":"10.1109/LED.2025.3598843","DOIUrl":"https://doi.org/10.1109/LED.2025.3598843","url":null,"abstract":"A low-loss broadband pill-box window for Terahertz (THz) Vacuum Electron Devices (VEDs) is proposed in this letter. To enlarge the THz vacuum window geometric size benefiting the fabrication process, a novel strong coupling over-mode operation has been proposed and employed without introducing extra oscillation points over a broad operation band. At the same time, the monocrystalline diamond (MD) layer is used to withstand stresses during the brazing process as well as the atmospheric pressure. The window frames use an Oxygen Free Copper (OFC) - Kovar heterogeneous integrated structure, ensuring both vacuum tightness and low-loss transmission. The fabricated device demonstrated exceptional vacuum tightness, with a measured leak rate of <inline-formula> <tex-math>${6}.{95}times {10}^{text {-10}}$ </tex-math></inline-formula> Pa<inline-formula> <tex-math>$cdot $ </tex-math></inline-formula>m3/s. The cold test result of the sealed THz MD window demonstrates a recorded low insertion loss (−3.67 dB) at 1 THz, and a 70 GHz bandwidth (0.960 THz – 1.030 THz). The cold test measurements closely match simulation predictions, validating the effectiveness of the strong coupling design in suppressing oscillatory points and the heterogeneous integrated structure in reducing the transmission loss.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 10","pages":"1861-1864"},"PeriodicalIF":4.5,"publicationDate":"2025-08-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145141731","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In nitride heteroepitaxy, lattice mismatch and thermal stress inevitably induce dislocation proliferation and defect formation, which critically degrade device reliability. In this letter, we demonstrate the high-quality epitaxial growth of nitride heterojunction structures on two-dimensional high-quality boron nitride (h-BN) materials via van der Waals epitaxy. Furthermore, BN also functions as a gate dielectric in the fabricated metal-insulator-semiconductor HEMT (MIS-HEMT), leveraging its ultrawide bandgap properties. The combined advantages of Buffer-assisted heterostructures and ultrawide-bandgap BN dielectric enabling a $10^{{3}}$ -fold gate leakage reduction. Additionally, the proposed device exhibits an on/off current ratio of $10~^{mathbf {{11}}}$ , with a maximum saturated output current density of 1550 mA/mm and 30% increase in transconductance. This shows the great potential of the proposed device for future power-electronics applications.
{"title":"High-On/Off-Current-Ratio AlGaN/GaN HEMTs via Van Der Waals Epitaxy GaN With a BN Inset Layer","authors":"Haoran Zhang;Jing Ning;Shiyu Li;Xue Shen;Yaning Zhang;Ziyan Wan;Dong Wang;Yue Hao;Jincheng Zhang","doi":"10.1109/LED.2025.3600447","DOIUrl":"https://doi.org/10.1109/LED.2025.3600447","url":null,"abstract":"In nitride heteroepitaxy, lattice mismatch and thermal stress inevitably induce dislocation proliferation and defect formation, which critically degrade device reliability. In this letter, we demonstrate the high-quality epitaxial growth of nitride heterojunction structures on two-dimensional high-quality boron nitride (h-BN) materials via van der Waals epitaxy. Furthermore, BN also functions as a gate dielectric in the fabricated metal-insulator-semiconductor HEMT (MIS-HEMT), leveraging its ultrawide bandgap properties. The combined advantages of Buffer-assisted heterostructures and ultrawide-bandgap BN dielectric enabling a <inline-formula> <tex-math>$10^{{3}}$ </tex-math></inline-formula>-fold gate leakage reduction. Additionally, the proposed device exhibits an on/off current ratio of <inline-formula> <tex-math>$10~^{mathbf {{11}}}$ </tex-math></inline-formula>, with a maximum saturated output current density of 1550 mA/mm and 30% increase in transconductance. This shows the great potential of the proposed device for future power-electronics applications.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 10","pages":"1693-1696"},"PeriodicalIF":4.5,"publicationDate":"2025-08-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145315392","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A novel method to mitigate cryogenic band tail effects is proposed by applying electrostatic doping in the prototype hybrid gate devices. The $pi $ -gate/GAA hybrid architecture facilitates independent back bias control over the channel beneath the $pi $ -gate. By applying forward back bias (FBB), the source-channel junction is shifted toward the $pi $ -gate/GAA interface, thereby spatially separating the junction from the defect-rich region. The hybrid gate device realizes an average subthreshold swing (SS) of ~16mV/dec at 15K with ${V} _{text {bg}} ge 10$ V, outperforming uniform GAA devices and effectively suppressing the SS inflection. At 4.2K, the average SS further improves to ~12mV/dec with ${V} _{text {bg}} ge 25$ V, supporting up to a 40% reduction in the supply voltage (${V} _{text {dd}}$ ). These findings indicate that the dopant-induced band tail states could be effectively screened by electrostatic doping, providing a promising strategy for SS optimization in energy-efficient computing.
提出了一种在混合栅极原型器件中应用静电掺杂来减轻低温带尾效应的新方法。$pi $ -gate/GAA混合架构有助于对$pi $ -gate下面的通道进行独立的反向偏置控制。通过施加正向反向偏置（FBB），源通道结向$pi $ -gate/GAA界面移动，从而在空间上将结与富缺陷区域分开。混合栅极器件在15K和${V} _{text {bg}} ge 10$ V下实现了16mV/dec的平均亚阈值摆幅（SS），优于均匀GAA器件，有效地抑制了SS弯曲。在4.2K时，平均SS进一步提高到12mV/dec， ${V} _{text {bg}} ge 25$ V，支持高达40% reduction in the supply voltage ( ${V} _{text {dd}}$ ). These findings indicate that the dopant-induced band tail states could be effectively screened by electrostatic doping, providing a promising strategy for SS optimization in energy-efficient computing.
{"title":"Mitigating Band Tail Effects by Electrostatic Doping in SOI Hybrid Gate MOSFETs","authors":"Yuxin Liu;Qiang Liu;Jin Chen;Huiqin Yu;Jia Huang;Wenjie Yu","doi":"10.1109/LED.2025.3600175","DOIUrl":"https://doi.org/10.1109/LED.2025.3600175","url":null,"abstract":"A novel method to mitigate cryogenic band tail effects is proposed by applying electrostatic doping in the prototype hybrid gate devices. The <inline-formula> <tex-math>$pi $ </tex-math></inline-formula>-gate/GAA hybrid architecture facilitates independent back bias control over the channel beneath the <inline-formula> <tex-math>$pi $ </tex-math></inline-formula>-gate. By applying forward back bias (FBB), the source-channel junction is shifted toward the <inline-formula> <tex-math>$pi $ </tex-math></inline-formula>-gate/GAA interface, thereby spatially separating the junction from the defect-rich region. The hybrid gate device realizes an average subthreshold swing (SS) of ~16mV/dec at 15K with <inline-formula> <tex-math>${V} _{text {bg}} ge 10$ </tex-math></inline-formula> V, outperforming uniform GAA devices and effectively suppressing the SS inflection. At 4.2K, the average SS further improves to ~12mV/dec with <inline-formula> <tex-math>${V} _{text {bg}} ge 25$ </tex-math></inline-formula> V, supporting up to a 40% reduction in the supply voltage (<inline-formula> <tex-math>${V} _{text {dd}}$ </tex-math></inline-formula>). These findings indicate that the dopant-induced band tail states could be effectively screened by electrostatic doping, providing a promising strategy for SS optimization in energy-efficient computing.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 10","pages":"1677-1680"},"PeriodicalIF":4.5,"publicationDate":"2025-08-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145315539","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Efficient detection of weak solar-blind ultraviolet signals demands high-concentration and high-mobility of two-dimensional electron gas (2DEG) in AlGaN-based heterojunction field-effect phototransistors (PTs). However, alloy scattering and interface defects in Al-rich AlGaN heterostructures degrade 2DEG properties, limiting photoresponse and stability. To address this, we introduce binary AlN/GaN interface layers at the ${mathrm {Al}}_{mathbf {{0}.{61}}}$ ${mathrm {GaN/Al}}_{mathbf {{0}.{53}}}$ GaN heterojunction, achieving a 25-fold increase in 2DEG sheet concentration (${2}.{5}times {10} ^{mathbf {{13}}}$ ${mathrm {cm}}^{mathbf {-{2}}}$ ) and a 36% mobility enhancement ($268 {mathrm {cm}}^{mathbf {{2}}}$ /V$cdot $ s). Simulations reveal that these enhancements originate from enhanced polarization charges and carrier confinement (increasing concentration) and reduced alloy scattering (improving mobility). The resulting PT exhibits a 3.5 times higher photocurrent and a peak detectivity of ${3}.{6}times {10} ^{mathbf {{18}}}$ Jones, significantly surpassing conventional designs. Furthermore, suppressed interface defects enable a three-order-of-magnitude faster response decay and a mitigated out-of-band response. This interface engineering strategy offers a practical solution for improving the 2DEG properties and device applications of Al-rich AlGaN heterojunctions.
{"title":"High-Sensitivity Solar-Blind UV Phototransistor With Binary AlN/GaN Interface-Layer-Engineered AlGaN Heterojunction","authors":"Zhuoya Peng;Zesheng Lv;Shouqiang Yang;Yv Yin;Jiabing Lu;Hao Jiang","doi":"10.1109/LED.2025.3599948","DOIUrl":"https://doi.org/10.1109/LED.2025.3599948","url":null,"abstract":"Efficient detection of weak solar-blind ultraviolet signals demands high-concentration and high-mobility of two-dimensional electron gas (2DEG) in AlGaN-based heterojunction field-effect phototransistors (PTs). However, alloy scattering and interface defects in Al-rich AlGaN heterostructures degrade 2DEG properties, limiting photoresponse and stability. To address this, we introduce binary AlN/GaN interface layers at the <inline-formula> <tex-math>${mathrm {Al}}_{mathbf {{0}.{61}}}$ </tex-math></inline-formula> <inline-formula> <tex-math>${mathrm {GaN/Al}}_{mathbf {{0}.{53}}}$ </tex-math></inline-formula> GaN heterojunction, achieving a 25-fold increase in 2DEG sheet concentration (<inline-formula> <tex-math>${2}.{5}times {10} ^{mathbf {{13}}}$ </tex-math></inline-formula> <inline-formula> <tex-math>${mathrm {cm}}^{mathbf {-{2}}}$ </tex-math></inline-formula>) and a 36% mobility enhancement (<inline-formula> <tex-math>$268 {mathrm {cm}}^{mathbf {{2}}}$ </tex-math></inline-formula>/V<inline-formula> <tex-math>$cdot $ </tex-math></inline-formula>s). Simulations reveal that these enhancements originate from enhanced polarization charges and carrier confinement (increasing concentration) and reduced alloy scattering (improving mobility). The resulting PT exhibits a 3.5 times higher photocurrent and a peak detectivity of <inline-formula> <tex-math>${3}.{6}times {10} ^{mathbf {{18}}}$ </tex-math></inline-formula> Jones, significantly surpassing conventional designs. Furthermore, suppressed interface defects enable a three-order-of-magnitude faster response decay and a mitigated out-of-band response. This interface engineering strategy offers a practical solution for improving the 2DEG properties and device applications of Al-rich AlGaN heterojunctions.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 10","pages":"1725-1728"},"PeriodicalIF":4.5,"publicationDate":"2025-08-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145315535","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In this study, the threshold voltage (${mathrm{V}}_{mathbf {text {th}}}$ ) instability subjected to off-state stress (OSS) in p-GaN gate AlGaN/GaN high-electron-mobility transistors (HEMTs) is investigated. During stress, ${mathrm{V}}_{mathbf {text {th}}}$ exhibits a slight positive shift; however, a more pronounced positive shift occurs within the first 5 seconds of the recovery phase. The evolution of gate leakage current (${mathrm{I}}_{mathbf {text {g}}}$ ) under off-state stress is also analyzed. A physical model is proposed to explain the instability, incorporating trap-assisted thermionic field emission (TA-TFE) at the GaN layer and gate electron injection, with holes and electrons trapped in defects in the GaN layer and AlGaN barrier, respectively. Dynamic on-state resistance (${mathrm{R}}_{mathbf {text {on}}}$ ) measurements are employed to further investigate the current collapse effect. By monitoring dynamic on-state resistance at temperatures ranging from 30 to 90°C, the activation energies of the responsible defects are extracted, identified as nitrogen vacancy in AlGaN barrier and carbon impurity substituting for nitrogen in GaN layer, thus validating the proposed model.
{"title":"Study of Vₜₕ Instability During Recovery After Off-State Stress in p-GaN HEMT","authors":"Yi-Huang Chen;Sheng-Yao Chou;Ming-Chen Chen;Ting-Chang Chang;Yu-Bo Wang;Yong-Ci Zhang;Chung-Wei Wu;Cheng-Hsien Lin;Jui-Tse Hsu;Ya-Huan Lee;Yu-Hsiang Tsai;Tsung-Ming Tsai","doi":"10.1109/LED.2025.3599696","DOIUrl":"https://doi.org/10.1109/LED.2025.3599696","url":null,"abstract":"In this study, the threshold voltage (<inline-formula> <tex-math>${mathrm{V}}_{mathbf {text {th}}}$ </tex-math></inline-formula>) instability subjected to off-state stress (OSS) in p-GaN gate AlGaN/GaN high-electron-mobility transistors (HEMTs) is investigated. During stress, <inline-formula> <tex-math>${mathrm{V}}_{mathbf {text {th}}}$ </tex-math></inline-formula> exhibits a slight positive shift; however, a more pronounced positive shift occurs within the first 5 seconds of the recovery phase. The evolution of gate leakage current (<inline-formula> <tex-math>${mathrm{I}}_{mathbf {text {g}}}$ </tex-math></inline-formula>) under off-state stress is also analyzed. A physical model is proposed to explain the instability, incorporating trap-assisted thermionic field emission (TA-TFE) at the GaN layer and gate electron injection, with holes and electrons trapped in defects in the GaN layer and AlGaN barrier, respectively. Dynamic on-state resistance (<inline-formula> <tex-math>${mathrm{R}}_{mathbf {text {on}}}$ </tex-math></inline-formula>) measurements are employed to further investigate the current collapse effect. By monitoring dynamic on-state resistance at temperatures ranging from 30 to 90°C, the activation energies of the responsible defects are extracted, identified as nitrogen vacancy in AlGaN barrier and carbon impurity substituting for nitrogen in GaN layer, thus validating the proposed model.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 10","pages":"1717-1720"},"PeriodicalIF":4.5,"publicationDate":"2025-08-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145315411","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In this letter, the antiferroelectric (AFE) performance of ${mathrm {Hf}}_{mathbf {x}}$ ${mathrm {Zr}}_{mathbf {{1}-}mathbf {x}}$ ${mathrm {O}}_{mathbf {{2}}}$ (HZO) film is significantly improved by regulating its oxygen vacancy (V${}_{!!mathbf {O}}$ ). The gas with different ${mathrm {O}}_{mathbf {{2}}}$ flow is used in the HZO films sputter process. Introducing appropriate ${mathrm {O}}_{mathbf {{2}}}$ flow enhances both energy storage density (ESD) and efficiency ($eta $ ) of the AFE HZO energy storage capacitors (ESCs). X-ray diffraction (XRD) and capacitance–electric (C–E) measurements demonstrate that the t-phase/o-phase ratio in HZO films was adjusted by regulating the V${}_{!!mathbf {O}}$ concentration to promote t-phase crystallization. The optimal crystallization of the t-phase in HZO films, achieved with 8.0% V${}_{!!mathbf {O}}$ and 0.82 Zr concentration, results in an ESD of ~86.3 J/cm3 and an efficiency of ~74%. Moreover, we attained exceptional durability, surpassing $10^{{9}}$ cycles while maintaining 98% of the initial ESD. The results obtained herein provide a novel and effective method to achieve high-performance AFE HZO ESCs.
{"title":"Enhancement of Energy Storage and Efficiency in Antiferroelectric Hf᙮Zr᙮₋₁O₂ Supercapacitors Through Tailored Phase Engineering by Oxygen Vacancy","authors":"Zhiquan He;Yu Bai;Guanlin Li;Xuanxi Liu;Xiuyi Wang;Chuhao Yao;Pengfei Jiang;Tiancheng Gong;Wei Wei;Xiao Long;Xinzhong Zhu;Yuan Qiu;Heng Ye;Yuan Wang;Qing Luo","doi":"10.1109/LED.2025.3599694","DOIUrl":"https://doi.org/10.1109/LED.2025.3599694","url":null,"abstract":"In this letter, the antiferroelectric (AFE) performance of <inline-formula> <tex-math>${mathrm {Hf}}_{mathbf {x}}$ </tex-math></inline-formula><inline-formula> <tex-math>${mathrm {Zr}}_{mathbf {{1}-}mathbf {x}}$ </tex-math></inline-formula><inline-formula> <tex-math>${mathrm {O}}_{mathbf {{2}}}$ </tex-math></inline-formula> (HZO) film is significantly improved by regulating its oxygen vacancy (V<inline-formula> <tex-math>${}_{!!mathbf {O}}$ </tex-math></inline-formula>). The gas with different <inline-formula> <tex-math>${mathrm {O}}_{mathbf {{2}}}$ </tex-math></inline-formula> flow is used in the HZO films sputter process. Introducing appropriate <inline-formula> <tex-math>${mathrm {O}}_{mathbf {{2}}}$ </tex-math></inline-formula> flow enhances both energy storage density (ESD) and efficiency (<inline-formula> <tex-math>$eta $ </tex-math></inline-formula>) of the AFE HZO energy storage capacitors (ESCs). X-ray diffraction (XRD) and capacitance–electric (C–E) measurements demonstrate that the t-phase/o-phase ratio in HZO films was adjusted by regulating the V<inline-formula> <tex-math>${}_{!!mathbf {O}}$ </tex-math></inline-formula> concentration to promote t-phase crystallization. The optimal crystallization of the t-phase in HZO films, achieved with 8.0% V<inline-formula> <tex-math>${}_{!!mathbf {O}}$ </tex-math></inline-formula> and 0.82 Zr concentration, results in an ESD of ~86.3 J/cm3 and an efficiency of ~74%. Moreover, we attained exceptional durability, surpassing <inline-formula> <tex-math>$10^{{9}}$ </tex-math></inline-formula> cycles while maintaining 98% of the initial ESD. The results obtained herein provide a novel and effective method to achieve high-performance AFE HZO ESCs.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 10","pages":"1893-1896"},"PeriodicalIF":4.5,"publicationDate":"2025-08-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145141641","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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