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Investigation on the Effects of Assembly Gaps in the Resonant Cavity of Klystrons 关于 Klystrons 谐振腔中装配间隙影响的研究
IF 4.9 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
IEEE Electron Device Letters
Pub Date : 2024-08-23 DOI: 10.1109/led.2024.3448452
Z.X. Su, J.C. Cai, P.C. Yin, D.C. Chen, J. Zhang, X.K. Zhang, C. Zhang, L. Zeng, J. Xu, L.N. Yue, H.R. Yin, Y. Xu, G.Q. Zhao, W.X. Wang, Y.Y. Wei
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引用次数: 0
Directly Coupled Hydrogenated Diamond FET Logic Circuit with High Voltage Gain 具有高电压增益的直接耦合氢化金刚石场效应晶体管逻辑电路
IF 4.9 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
IEEE Electron Device Letters
Pub Date : 2024-08-23 DOI: 10.1109/led.2024.3448363
Yuesong Liang, Wei Wang, Fang Lin, Tianlin Niu, Genqiang Chen, Fei Wang, Qi Li, Shi He, Minghui Zhang, Yanfeng Wang, Feng Wen, Hong-Xing Wang
{"title":"Directly Coupled Hydrogenated Diamond FET Logic Circuit with High Voltage Gain","authors":"Yuesong Liang, Wei Wang, Fang Lin, Tianlin Niu, Genqiang Chen, Fei Wang, Qi Li, Shi He, Minghui Zhang, Yanfeng Wang, Feng Wen, Hong-Xing Wang","doi":"10.1109/led.2024.3448363","DOIUrl":"https://doi.org/10.1109/led.2024.3448363","url":null,"abstract":"","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":null,"pages":null},"PeriodicalIF":4.9,"publicationDate":"2024-08-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142222872","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Directional Etching of Barrierless NiAl Lines on 300mm Wafers for Interconnects Applications 在 300 毫米晶圆上定向蚀刻用于互连应用的无屏障镍铝线
IF 4.9 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
IEEE Electron Device Letters
Pub Date : 2024-08-23 DOI: 10.1109/led.2024.3449219
S. Kundu, J.-P. Soulié, G. Marti, F. U. Okudur, L. Souriau, F. Lazzarino, G. Murdoch, S. Park, Z. Tőkei
{"title":"Directional Etching of Barrierless NiAl Lines on 300mm Wafers for Interconnects Applications","authors":"S. Kundu, J.-P. Soulié, G. Marti, F. U. Okudur, L. Souriau, F. Lazzarino, G. Murdoch, S. Park, Z. Tőkei","doi":"10.1109/led.2024.3449219","DOIUrl":"https://doi.org/10.1109/led.2024.3449219","url":null,"abstract":"","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":null,"pages":null},"PeriodicalIF":4.9,"publicationDate":"2024-08-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142222928","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Hybrid p-GaN/MIS Gate HEMT Suppressing Drain-Induced Dynamic Threshold Voltage Instability 抑制漏极引起的动态阈值电压不稳定性的 p-GaN/MIS 门混合 HEMT
IF 4.9 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
IEEE Electron Device Letters
Pub Date : 2024-08-23 DOI: 10.1109/led.2024.3448362
Chen Wang, Jinyan Wang, Xin Wang, Ziheng Liu, Jiayin He, Ju Gao, Chengkang Ao, Maojun Wang, Jin Wei
{"title":"Hybrid p-GaN/MIS Gate HEMT Suppressing Drain-Induced Dynamic Threshold Voltage Instability","authors":"Chen Wang, Jinyan Wang, Xin Wang, Ziheng Liu, Jiayin He, Ju Gao, Chengkang Ao, Maojun Wang, Jin Wei","doi":"10.1109/led.2024.3448362","DOIUrl":"https://doi.org/10.1109/led.2024.3448362","url":null,"abstract":"","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":null,"pages":null},"PeriodicalIF":4.9,"publicationDate":"2024-08-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142222929","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Efficient Calculation of Charging Effects in Electron Beam Lithography Using the SA-AMG 使用 SA-AMG 高效计算电子束光刻技术中的充电效应
IF 4.9 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
IEEE Electron Device Letters
Pub Date : 2024-08-23 DOI: 10.1109/led.2024.3448504
Wentao Ma, Kangpei Yao, Xiaoyang Zhong, Jie Liu
{"title":"Efficient Calculation of Charging Effects in Electron Beam Lithography Using the SA-AMG","authors":"Wentao Ma, Kangpei Yao, Xiaoyang Zhong, Jie Liu","doi":"10.1109/led.2024.3448504","DOIUrl":"https://doi.org/10.1109/led.2024.3448504","url":null,"abstract":"","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":null,"pages":null},"PeriodicalIF":4.9,"publicationDate":"2024-08-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142222917","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Performance Comparisons of GaN Vertical Transistors with Sidewalls Treated by TMAH and H3PO4 Solutions 侧壁经 TMAH 和 H3PO4 溶液处理的氮化镓垂直晶体管的性能比较
IF 4.9 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
IEEE Electron Device Letters
Pub Date : 2024-08-22 DOI: 10.1109/led.2024.3448196
Yu-Chuan Chu, Chih-kang Chang, Zhi-Xiang Zhang, Anuj Chauhan, Yi-Ta Chung, Tien-Yu Wang, Miin-Jang Chen, Wei-Chi Lai, Jian-Jang Huang
{"title":"Performance Comparisons of GaN Vertical Transistors with Sidewalls Treated by TMAH and H3PO4 Solutions","authors":"Yu-Chuan Chu, Chih-kang Chang, Zhi-Xiang Zhang, Anuj Chauhan, Yi-Ta Chung, Tien-Yu Wang, Miin-Jang Chen, Wei-Chi Lai, Jian-Jang Huang","doi":"10.1109/led.2024.3448196","DOIUrl":"https://doi.org/10.1109/led.2024.3448196","url":null,"abstract":"","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":null,"pages":null},"PeriodicalIF":4.9,"publicationDate":"2024-08-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142222941","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Self-Filtering Narrowband Organic Photodetectors for Non-Invasive Blood-Oxygen Monitoring 用于非侵入式血氧监测的自滤波窄带有机光电探测器
IF 4.9 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
IEEE Electron Device Letters
Pub Date : 2024-08-22 DOI: 10.1109/led.2024.3447588
Muyi Fu, Yan Wei Chen, Yunhao Cao, Zihao Lin, Xiye Yang, Sheng Dong, Kai Zhang, Fei Huang
{"title":"Self-Filtering Narrowband Organic Photodetectors for Non-Invasive Blood-Oxygen Monitoring","authors":"Muyi Fu, Yan Wei Chen, Yunhao Cao, Zihao Lin, Xiye Yang, Sheng Dong, Kai Zhang, Fei Huang","doi":"10.1109/led.2024.3447588","DOIUrl":"https://doi.org/10.1109/led.2024.3447588","url":null,"abstract":"","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":null,"pages":null},"PeriodicalIF":4.9,"publicationDate":"2024-08-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142222871","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Cryogenic Ferroelectricity of HZO Capacitors on a III-V Semiconductor III-V 半导体上 HZO 电容器的低温铁电性
IF 4.9 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
IEEE Electron Device Letters
Pub Date : 2024-08-22 DOI: 10.1109/led.2024.3448378
Mamidala Karthik Ram, Hannes Dahlberg, Lars-Erik Wernersson
{"title":"Cryogenic Ferroelectricity of HZO Capacitors on a III-V Semiconductor","authors":"Mamidala Karthik Ram, Hannes Dahlberg, Lars-Erik Wernersson","doi":"10.1109/led.2024.3448378","DOIUrl":"https://doi.org/10.1109/led.2024.3448378","url":null,"abstract":"","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":null,"pages":null},"PeriodicalIF":4.9,"publicationDate":"2024-08-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142227511","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Lithium solid electrolyte-gated oxide transistors-based Schmitt trigger with high thermal resistance 基于锂固体电解质门控氧化物晶体管的高热阻施密特触发器
IF 4.9 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
IEEE Electron Device Letters
Pub Date : 2024-08-09 DOI: 10.1109/led.2024.3441054
Zhiyuan Luo, Zhengdong Jiang, Kekang Liu, Peicheng Jiao, Yanghui Liu
{"title":"Lithium solid electrolyte-gated oxide transistors-based Schmitt trigger with high thermal resistance","authors":"Zhiyuan Luo, Zhengdong Jiang, Kekang Liu, Peicheng Jiao, Yanghui Liu","doi":"10.1109/led.2024.3441054","DOIUrl":"https://doi.org/10.1109/led.2024.3441054","url":null,"abstract":"","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":null,"pages":null},"PeriodicalIF":4.9,"publicationDate":"2024-08-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141940288","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High-performance Self-powered Photodetectors Based on TMD alloy/GaAs van der Waals Heterojunctions for Infrared Light Communication 基于 TMD 合金/砷化镓范德华异质结的高性能自供电光电探测器，用于红外光通信
IF 4.9 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
IEEE Electron Device Letters
Pub Date : 2024-08-09 DOI: 10.1109/led.2024.3440996
Yansong Wang, Wenliang Wang
{"title":"High-performance Self-powered Photodetectors Based on TMD alloy/GaAs van der Waals Heterojunctions for Infrared Light Communication","authors":"Yansong Wang, Wenliang Wang","doi":"10.1109/led.2024.3440996","DOIUrl":"https://doi.org/10.1109/led.2024.3440996","url":null,"abstract":"","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":null,"pages":null},"PeriodicalIF":4.9,"publicationDate":"2024-08-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141940563","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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