Pub Date : 2024-10-25DOI: 10.1109/LED.2024.3475764
{"title":"Special Issue on Intelligent Sensor Systems for the IEEE Journal of Electron Devices","authors":"","doi":"10.1109/LED.2024.3475764","DOIUrl":"https://doi.org/10.1109/LED.2024.3475764","url":null,"abstract":"","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"45 11","pages":"2249-2250"},"PeriodicalIF":4.1,"publicationDate":"2024-10-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10736012","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142524109","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-10-25DOI: 10.1109/LED.2024.3484809
{"title":"IEEE Open Journal on Immersive Displays","authors":"","doi":"10.1109/LED.2024.3484809","DOIUrl":"https://doi.org/10.1109/LED.2024.3484809","url":null,"abstract":"","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"45 11","pages":"2252-2253"},"PeriodicalIF":4.1,"publicationDate":"2024-10-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10736135","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142524152","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-10-25DOI: 10.1109/LED.2024.3475760
{"title":"IEEE Electron Device Letters Information for Authors","authors":"","doi":"10.1109/LED.2024.3475760","DOIUrl":"https://doi.org/10.1109/LED.2024.3475760","url":null,"abstract":"","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"45 11","pages":"2246-2246"},"PeriodicalIF":4.1,"publicationDate":"2024-10-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10736134","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142524108","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-10-25DOI: 10.1109/LED.2024.3475762
{"title":"Bridging the Data Gap in Photovoltaics with Synthetic Data Generation","authors":"","doi":"10.1109/LED.2024.3475762","DOIUrl":"https://doi.org/10.1109/LED.2024.3475762","url":null,"abstract":"","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"45 11","pages":"2247-2248"},"PeriodicalIF":4.1,"publicationDate":"2024-10-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10736123","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142524168","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-10-24DOI: 10.1109/LED.2024.3485916
Z.-F. Lou;B.-R. Chen;K.-Y. Hsiang;Y.-T. Chang;C.-H. Liu;H.-C. Tseng;H.-T. Liao;P. Su;M. H. Lee
High Zr concentration of super-lamination (SL) HZO/ZrO2/HZO (HZZ) with morphotropic phase boundary (MPB) to enhance dielectric constant to 46 and 2Pr of $44~mu $ C/cm2 is employed in ferroelectric capacitive memory (FCM). The proposed HZZ memcapacitor demonstrates a remarkably high CHCS/CLCS ratio of 245x with 3 V, excellent data retention >104 s, multi-level cell (MLC), and achieves non-destructive read operation (NDRO) for 109 cycles. The MPB-based SL technique for HZZ is a promising concept that elevates the permittivity for FCM/memcapacitor non-volatile memory (NVM) or advanced logic applications.
{"title":"Super-Lamination HZO/ZrO₂/HZO of Ferroelectric Memcapacitors With Morphotropic Phase Boundary (MPB) for High Capacitive Ratio and Non-Destructive Readout","authors":"Z.-F. Lou;B.-R. Chen;K.-Y. Hsiang;Y.-T. Chang;C.-H. Liu;H.-C. Tseng;H.-T. Liao;P. Su;M. H. Lee","doi":"10.1109/LED.2024.3485916","DOIUrl":"https://doi.org/10.1109/LED.2024.3485916","url":null,"abstract":"High Zr concentration of super-lamination (SL) HZO/ZrO2/HZO (HZZ) with morphotropic phase boundary (MPB) to enhance dielectric constant to 46 and 2Pr of \u0000<inline-formula> <tex-math>$44~mu $ </tex-math></inline-formula>\u0000C/cm2 is employed in ferroelectric capacitive memory (FCM). The proposed HZZ memcapacitor demonstrates a remarkably high CHCS/CLCS ratio of 245x with 3 V, excellent data retention >104 s, multi-level cell (MLC), and achieves non-destructive read operation (NDRO) for 109 cycles. The MPB-based SL technique for HZZ is a promising concept that elevates the permittivity for FCM/memcapacitor non-volatile memory (NVM) or advanced logic applications.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"45 12","pages":"2355-2358"},"PeriodicalIF":4.1,"publicationDate":"2024-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142736478","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-10-24DOI: 10.1109/LED.2024.3485914
Yaying Liu;Wenjun Huang;Jun Ma;Zhaojun Liu
This letter demonstrates an enhancement mode p-GaN gate HEMT-based 2T1C pixel circuit for active matrix (AM) $mu $ LED displays. The 2T1C pixel circuit consists of two p-GaN gate HEMTs serving as the switching and driving transistors and a metal-insulator-metal (MIM) capacitor. The p-GaN gate HEMT shows a threshold voltage of 0.7 V and can provide a maximum driving current of $675~mu $ A. An on-off ratio of 108 is achieved, with an off-state current less than 10 pA. For the capacitor, a 20 nm Al2O3 layer is used as the dielectric, and the measured capacitance density is 4 fF/ $mu $ m2. The proposed 2T1C can drive a $20~mu $ m $mu $ LED under a scan rate of 120 Hz. The extracted rise time and fall time of the VOUT are $15.75~mu $ s and $8.42~mu $ s, respectively. In addition, the pulse amplitude modulation (PAM) of the 2T1C has been demonstrated, showing that the light intensity of the $mu $ LED can be modulated by the amplitude of the data signal.
{"title":"p-GaN Gate HEMT-Based 2T1C for Active Matrix μLED Displays","authors":"Yaying Liu;Wenjun Huang;Jun Ma;Zhaojun Liu","doi":"10.1109/LED.2024.3485914","DOIUrl":"https://doi.org/10.1109/LED.2024.3485914","url":null,"abstract":"This letter demonstrates an enhancement mode p-GaN gate HEMT-based 2T1C pixel circuit for active matrix (AM) \u0000<inline-formula> <tex-math>$mu $ </tex-math></inline-formula>\u0000LED displays. The 2T1C pixel circuit consists of two p-GaN gate HEMTs serving as the switching and driving transistors and a metal-insulator-metal (MIM) capacitor. The p-GaN gate HEMT shows a threshold voltage of 0.7 V and can provide a maximum driving current of \u0000<inline-formula> <tex-math>$675~mu $ </tex-math></inline-formula>\u0000A. An on-off ratio of 108 is achieved, with an off-state current less than 10 pA. For the capacitor, a 20 nm Al2O3 layer is used as the dielectric, and the measured capacitance density is 4 fF/\u0000<inline-formula> <tex-math>$mu $ </tex-math></inline-formula>\u0000m2. The proposed 2T1C can drive a \u0000<inline-formula> <tex-math>$20~mu $ </tex-math></inline-formula>\u0000m \u0000<inline-formula> <tex-math>$mu $ </tex-math></inline-formula>\u0000LED under a scan rate of 120 Hz. The extracted rise time and fall time of the VOUT are \u0000<inline-formula> <tex-math>$15.75~mu $ </tex-math></inline-formula>\u0000s and \u0000<inline-formula> <tex-math>$8.42~mu $ </tex-math></inline-formula>\u0000s, respectively. In addition, the pulse amplitude modulation (PAM) of the 2T1C has been demonstrated, showing that the light intensity of the \u0000<inline-formula> <tex-math>$mu $ </tex-math></inline-formula>\u0000LED can be modulated by the amplitude of the data signal.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"45 12","pages":"2451-2454"},"PeriodicalIF":4.1,"publicationDate":"2024-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142753786","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Reliable data storage technologies able to operate at cryogenic temperatures are critical to implement scalable quantum computers and develop deep-space exploration systems, among other applications. Their scarce availability is pushing towards the development of emerging memories that can perform such storage in a non-volatile fashion. Resistive Random-Access Memories (RRAM) have demonstrated their switching capabilities down to 4K. However, their operability at lower temperatures still remain as a challenge. In this work, we demonstrate for the first time the forming and resistive switching capabilities of CMOS-compatible RRAM devices at 1.4K. The HfO2-based devices are deployed following an array of 1-transistor-1-resistor (1T1R) cells. Their switching performance at 1.4K was also tested in the multilevel-cell (MLC) approach, storing up to 4 resistance levels per cell.
{"title":"Forming and Resistive Switching of HfO₂-Based RRAM Devices at Cryogenic Temperature","authors":"Emilio Perez-Bosch Quesada;Alberto Mistroni;Ruolan Jia;Keerthi Dorai Swamy Reddy;Felix Reichmann;Helena Castan;Salvador Dueñas;Christian Wenger;Eduardo Perez","doi":"10.1109/LED.2024.3485873","DOIUrl":"https://doi.org/10.1109/LED.2024.3485873","url":null,"abstract":"Reliable data storage technologies able to operate at cryogenic temperatures are critical to implement scalable quantum computers and develop deep-space exploration systems, among other applications. Their scarce availability is pushing towards the development of emerging memories that can perform such storage in a non-volatile fashion. Resistive Random-Access Memories (RRAM) have demonstrated their switching capabilities down to 4K. However, their operability at lower temperatures still remain as a challenge. In this work, we demonstrate for the first time the forming and resistive switching capabilities of CMOS-compatible RRAM devices at 1.4K. The HfO2-based devices are deployed following an array of 1-transistor-1-resistor (1T1R) cells. Their switching performance at 1.4K was also tested in the multilevel-cell (MLC) approach, storing up to 4 resistance levels per cell.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"45 12","pages":"2391-2394"},"PeriodicalIF":4.1,"publicationDate":"2024-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142736524","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-10-24DOI: 10.1109/LED.2024.3485609
Heetae Kim;Seohak Park;Johak Jeong;Jihoon Jeon;Hoseok Lee;Chihun Sung;Jeho Na;Min Ju Kim;Seong Keun Kim;Sung-Yool Choi;Keun Heo;Sung Haeng Cho;Byung Jin Cho
In this study, we report the integration of an a-IGZO cell transistor and a high-k ZrO2 cell capacitor using Intense Pulsed Light (IPL) annealing for 1T-1C DRAM application. With IPL annealing, the ZrO2 capacitor can successfully achieve a high k-value of 33, without any detrimental effect to the electrical performance of the IGZO transistor which is vulnerable to high temperature process. The a-IGZO transistor could maintain an ultra-low leakage current of $1.3times 10^{-{16}}$ A/ $mu $ m, even after the high-k dielectric crystallization process.
在这项研究中，我们报告了利用强脉冲光（IPL）退火技术将 a-IGZO 单元晶体管和高 k ZrO2 单元电容器集成到 1T-1C DRAM 应用中的情况。通过 IPL 退火，ZrO2 电容器可成功达到 33 的高 k 值，而不会对易受高温工艺影响的 IGZO 晶体管的电气性能产生任何不利影响。即使在高 k 电介质结晶过程之后，a-IGZO 晶体管仍能保持 1.3 倍 10^{-{16}}$ A/ $mu $ m 的超低漏电流。
{"title":"Intense Pulsed Light Annealing for High-k Capacitor Integration in 1T-1C DRAM With a-IGZO Cell Transistors","authors":"Heetae Kim;Seohak Park;Johak Jeong;Jihoon Jeon;Hoseok Lee;Chihun Sung;Jeho Na;Min Ju Kim;Seong Keun Kim;Sung-Yool Choi;Keun Heo;Sung Haeng Cho;Byung Jin Cho","doi":"10.1109/LED.2024.3485609","DOIUrl":"https://doi.org/10.1109/LED.2024.3485609","url":null,"abstract":"In this study, we report the integration of an a-IGZO cell transistor and a high-k ZrO2 cell capacitor using Intense Pulsed Light (IPL) annealing for 1T-1C DRAM application. With IPL annealing, the ZrO2 capacitor can successfully achieve a high k-value of 33, without any detrimental effect to the electrical performance of the IGZO transistor which is vulnerable to high temperature process. The a-IGZO transistor could maintain an ultra-low leakage current of \u0000<inline-formula> <tex-math>$1.3times 10^{-{16}}$ </tex-math></inline-formula>\u0000 A/\u0000<inline-formula> <tex-math>$mu $ </tex-math></inline-formula>\u0000m, even after the high-k dielectric crystallization process.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"45 12","pages":"2431-2434"},"PeriodicalIF":4.1,"publicationDate":"2024-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142736482","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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