Pub Date : 2025-08-29DOI: 10.1109/LED.2025.3585313
Baiqing Jiang;Dongyang Wu;Qianwen Zhao;Kaihua Lou;Yuelei Zhao;Yan Zhou;C. Tian;Chong Bi
Presents corrections to the paper, (Corrections to “Write Asymmetry of Spin-Orbit Torque Memory Induced by In-Plane Magnetic Fields”).
对“面内磁场诱导的自旋-轨道转矩记忆的写入不对称性”进行了修正。
{"title":"Corrections to “Write Asymmetry of Spin-Orbit Torque Memory Induced by In-Plane Magnetic Fields”","authors":"Baiqing Jiang;Dongyang Wu;Qianwen Zhao;Kaihua Lou;Yuelei Zhao;Yan Zhou;C. Tian;Chong Bi","doi":"10.1109/LED.2025.3585313","DOIUrl":"https://doi.org/10.1109/LED.2025.3585313","url":null,"abstract":"Presents corrections to the paper, (Corrections to “Write Asymmetry of Spin-Orbit Torque Memory Induced by In-Plane Magnetic Fields”).","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 9","pages":"1656-1656"},"PeriodicalIF":4.5,"publicationDate":"2025-08-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11145052","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144918382","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-08-29DOI: 10.1109/LED.2025.3597115
{"title":"Call for Papers for a Special Issue of IEEE Transactions on Electron Devices: Wide Band Gap Semiconductors for Automotive Applications","authors":"","doi":"10.1109/LED.2025.3597115","DOIUrl":"https://doi.org/10.1109/LED.2025.3597115","url":null,"abstract":"","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 9","pages":"1660-1661"},"PeriodicalIF":4.5,"publicationDate":"2025-08-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11145047","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144918344","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-08-29DOI: 10.1109/LED.2025.3597117
{"title":"Call for Papers for a Special Issue of IEEE Transactions on Electron Devices: Reliability of Advanced Nodes","authors":"","doi":"10.1109/LED.2025.3597117","DOIUrl":"https://doi.org/10.1109/LED.2025.3597117","url":null,"abstract":"","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 9","pages":"1662-1663"},"PeriodicalIF":4.5,"publicationDate":"2025-08-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11145070","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144918144","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-08-29DOI: 10.1109/LED.2025.3597119
{"title":"Call for Papers for a Special Issue of IEEE Transactions on Electron Devices: Ultrawide Band Gap Semiconductor Devices for RF, Power and Optoelectronic Applications","authors":"","doi":"10.1109/LED.2025.3597119","DOIUrl":"https://doi.org/10.1109/LED.2025.3597119","url":null,"abstract":"","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 9","pages":"1664-1665"},"PeriodicalIF":4.5,"publicationDate":"2025-08-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11145050","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144918394","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-08-29DOI: 10.1109/LED.2025.3597122
{"title":"IEEE Transactions on Electron Devices Table of Contents","authors":"","doi":"10.1109/LED.2025.3597122","DOIUrl":"https://doi.org/10.1109/LED.2025.3597122","url":null,"abstract":"","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 9","pages":"1666-C3"},"PeriodicalIF":4.5,"publicationDate":"2025-08-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11145053","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144918412","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-08-29DOI: 10.1109/LED.2025.3597113
{"title":"IEEE Electron Device Letters Information for Authors","authors":"","doi":"10.1109/LED.2025.3597113","DOIUrl":"https://doi.org/10.1109/LED.2025.3597113","url":null,"abstract":"","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 9","pages":"1659-1659"},"PeriodicalIF":4.5,"publicationDate":"2025-08-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11145051","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144917302","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In this study, AlGaN/GaN light-emitting HEMT (LE-HEMT) with varying numbers of InGaN layers as both multi-channels (MCs) and multiple-quantum-wells (MQWs) are fabricated, with highest luminance in record being achieved on GaN HEMT epitaxial wafers. The proposed structure achieves true epitaxially monolithic integration by directly incorporating MQWs with the two-dimensional electron gas channels. It is demonstrated that an outstanding switching ratio of ${I}_{text {on}}$ /${I}_{text {off}} = 10^{{8}}{}$ is achieved, despite the incorporation of MCs. A luminance of up to $2.1 times 10^{{5}}$ cd/m2 and an outstanding light output power of 13 W/cm2 are obtained, achieving the highest reported luminance for LE-HEMTs. Additionally, the LE-HEMT can also be utilized as an on-chip photodetector, with ultra-low dark current of fA level. Under 365 nm UV irradiation, the LE-HEMT exhibits extremely high ratio of photocurrent to dark current (${I}_{text {light}}$ /${I}_{text {dark}}text {)}$ of about $10^{{7}}$ and an outstanding specific detectivity of $5.2 times 10^{{14}}$ Jones at ${V}_{text {DD}} = $ - 5 V under light power density of 1 mW/cm2. This work provides a novel approach for the monolithic integration of display pixel, its driver device, and also on-chip photodetectors, paving the way for potential applications in both high-refresh-rate Micro-LED displays and full-duplex visible light communications.
{"title":"Multi-Channel LE-HEMT With Highest Luminance in Record Toward Micro-Display and On-Chip High-Detectivity Photodetectors","authors":"Jijun Zhu;Fei Wang;Tianci Miao;Kai Cheng;Peng Xiang;Luqiao Yin;Aiying Guo;Gaoyu Dai;Jingjing Liu;Kailin Ren;Jianhua Zhang","doi":"10.1109/LED.2025.3601846","DOIUrl":"https://doi.org/10.1109/LED.2025.3601846","url":null,"abstract":"In this study, AlGaN/GaN light-emitting HEMT (LE-HEMT) with varying numbers of InGaN layers as both multi-channels (MCs) and multiple-quantum-wells (MQWs) are fabricated, with highest luminance in record being achieved on GaN HEMT epitaxial wafers. The proposed structure achieves true epitaxially monolithic integration by directly incorporating MQWs with the two-dimensional electron gas channels. It is demonstrated that an outstanding switching ratio of <inline-formula> <tex-math>${I}_{text {on}}$ </tex-math></inline-formula>/<inline-formula> <tex-math>${I}_{text {off}} = 10^{{8}}{}$ </tex-math></inline-formula> is achieved, despite the incorporation of MCs. A luminance of up to <inline-formula> <tex-math>$2.1 times 10^{{5}}$ </tex-math></inline-formula> cd/m2 and an outstanding light output power of 13 W/cm2 are obtained, achieving the highest reported luminance for LE-HEMTs. Additionally, the LE-HEMT can also be utilized as an on-chip photodetector, with ultra-low dark current of fA level. Under 365 nm UV irradiation, the LE-HEMT exhibits extremely high ratio of photocurrent to dark current (<inline-formula> <tex-math>${I}_{text {light}}$ </tex-math></inline-formula>/<inline-formula> <tex-math>${I}_{text {dark}}text {)}$ </tex-math></inline-formula> of about <inline-formula> <tex-math>$10^{{7}}$ </tex-math></inline-formula> and an outstanding specific detectivity of <inline-formula> <tex-math>$5.2 times 10^{{14}}$ </tex-math></inline-formula> Jones at <inline-formula> <tex-math>${V}_{text {DD}} = $ </tex-math></inline-formula> - 5 V under light power density of 1 mW/cm2. This work provides a novel approach for the monolithic integration of display pixel, its driver device, and also on-chip photodetectors, paving the way for potential applications in both high-refresh-rate Micro-LED displays and full-duplex visible light communications.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 10","pages":"1721-1724"},"PeriodicalIF":4.5,"publicationDate":"2025-08-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145315320","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The development of flexible radio frequency (RF) systems has increased the demand for high-power flexible gallium nitride (GaN) amplifiers. In this letter, a heterogeneous integration process utilizing a silicon carbide (SiC)/parylene heterogeneously integrated substrate is proposed for flexible RF GaN power amplifier (PA). In this fabrication process, the GaN PA is first designed on a SiC substrate with $100~mu $ m thickness and then thinned down to $sim 5~mu $ m after adhering to a temporary carrier. Subsequently, a $25~mu $ m-thick parylene layer is deposited directly onto the SiC substrate via chemical vapor deposition (CVD), forming a SiC/parylene substrate. The proposed substrate can improve thermal dissipation compared to a pure parylene substrate while maintaining flexibility. Finally, a flexible GaN PA can be obtained by peeling it off from the temporary carrier. By utilizing the proposed process, a flexible GaN PA with state-of-the-art output power is demonstrated. The continuous-wave (CW) measurement results show that a saturation output power (${P}_{text {sat}}text {)}$ of 28.3 dBm at 1.6 GHz under flat conditions is achieved for the flexible PA. And the corresponding power-added efficiency (PAE) reaches up to 38.3%. The flexible performance of the power amplifier is also characterized under bending condition with a curvature radius of 3 cm, which exhibits less than 0.1 dB degradation in ${P}_{text {sat}}$ . The results of this letter will be useful for flexible wireless communication systems requiring either high data-rate or long-distance transmission.
柔性射频（RF）系统的发展增加了对高功率柔性氮化镓（GaN）放大器的需求。在这封信中，提出了一种利用碳化硅(SiC)/聚对二甲苯异质集成衬底的柔性射频GaN功率放大器（PA）异质集成工艺。在这种制造工艺中，GaN PA首先设计在厚度为$100~mu $ m的SiC衬底上，然后在粘附到临时载流子后减薄到$sim 5~mu $ m。随后，通过化学气相沉积（CVD）将$25~mu $ m厚的聚对二甲苯层直接沉积在SiC衬底上，形成SiC/聚对二甲苯衬底。与纯聚对二甲苯基板相比，所提出的基板可以改善散热，同时保持灵活性。最后，通过将其从临时载体上剥离，可以获得柔性GaN PA。利用所提出的工艺，展示了具有最先进输出功率的柔性GaN PA。连续波（CW）测量结果表明，在平坦条件下，柔性放大器在1.6 GHz下的饱和输出功率（${P}_{text {sat}}text {)}$）为28.3 dBm。相应的功率附加效率（PAE）可达38.3%. The flexible performance of the power amplifier is also characterized under bending condition with a curvature radius of 3 cm, which exhibits less than 0.1 dB degradation in ${P}_{text {sat}}$ . The results of this letter will be useful for flexible wireless communication systems requiring either high data-rate or long-distance transmission.
{"title":"Heterogeneously Integrated Flexible GaN RF Power Amplifier on SiC/Parylene Substrate","authors":"Wenhao Zheng;Qingzhi Wu;Zhen Zhao;Ziyu Zhang;Yan Wang;Bo Xu;Zenghui Wang;Yuehang Xu","doi":"10.1109/LED.2025.3602111","DOIUrl":"https://doi.org/10.1109/LED.2025.3602111","url":null,"abstract":"The development of flexible radio frequency (RF) systems has increased the demand for high-power flexible gallium nitride (GaN) amplifiers. In this letter, a heterogeneous integration process utilizing a silicon carbide (SiC)/parylene heterogeneously integrated substrate is proposed for flexible RF GaN power amplifier (PA). In this fabrication process, the GaN PA is first designed on a SiC substrate with <inline-formula> <tex-math>$100~mu $ </tex-math></inline-formula>m thickness and then thinned down to <inline-formula> <tex-math>$sim 5~mu $ </tex-math></inline-formula>m after adhering to a temporary carrier. Subsequently, a <inline-formula> <tex-math>$25~mu $ </tex-math></inline-formula>m-thick parylene layer is deposited directly onto the SiC substrate via chemical vapor deposition (CVD), forming a SiC/parylene substrate. The proposed substrate can improve thermal dissipation compared to a pure parylene substrate while maintaining flexibility. Finally, a flexible GaN PA can be obtained by peeling it off from the temporary carrier. By utilizing the proposed process, a flexible GaN PA with state-of-the-art output power is demonstrated. The continuous-wave (CW) measurement results show that a saturation output power (<inline-formula> <tex-math>${P}_{text {sat}}text {)}$ </tex-math></inline-formula> of 28.3 dBm at 1.6 GHz under flat conditions is achieved for the flexible PA. And the corresponding power-added efficiency (PAE) reaches up to 38.3%. The flexible performance of the power amplifier is also characterized under bending condition with a curvature radius of 3 cm, which exhibits less than 0.1 dB degradation in <inline-formula> <tex-math>${P}_{text {sat}}$ </tex-math></inline-formula>. The results of this letter will be useful for flexible wireless communication systems requiring either high data-rate or long-distance transmission.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 10","pages":"1709-1712"},"PeriodicalIF":4.5,"publicationDate":"2025-08-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145315353","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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