Pub Date : 2024-09-06DOI: 10.1109/LED.2024.3455372
Jia Cheng Li;Ying Chen Li;Zi Chun Liu;Yuan Xiao Ma;Ye Liang Wang
Self-rectifying memristors have been attracting attentions to suppress sneak current in crossbar without raising integration complexity. In this work, memristors based on Cs0.05(MA0.17FA $_{{0}.{83}}text {)}_{{0}.{95}}$ Pb(I0.83Br $_{{0}.{17}}text {)}_{{3}}$ perovskite film are presented with a high rectification ratio around 514 and an on/off ratio of 1362. The device can continuously operate for $10^{{4}}$ cycles and the retention time is over $10^{{4}}$ seconds at $85~^{circ }$ C. In-depth mechanistic analysis reveals that the resistive-switching behavior originates from the migration of iodide ions, which is accompanied by a high rectification ratio produced by the high barrier at the interface between Au and Cs0.05(MA0.17FA $_{{0}.{83}}text {)}_{{0}.{95}}$ Pb(I0.83Br $_{{0}.{17}}text {)}_{{3}}$ . The maximum effective array size based on the perovskite memristor is up to 1747 with a read margin (RM) of 10%. We believe that this work can pave a way for the development of perovskites thin films in high-density memristive arrays.
{"title":"Self-Rectifying Resistive Switching Characteristics in CsMAFAPbIBr Perovskite-Based Memristor Device","authors":"Jia Cheng Li;Ying Chen Li;Zi Chun Liu;Yuan Xiao Ma;Ye Liang Wang","doi":"10.1109/LED.2024.3455372","DOIUrl":"10.1109/LED.2024.3455372","url":null,"abstract":"Self-rectifying memristors have been attracting attentions to suppress sneak current in crossbar without raising integration complexity. In this work, memristors based on Cs0.05(MA0.17FA\u0000<inline-formula> <tex-math>$_{{0}.{83}}text {)}_{{0}.{95}}$ </tex-math></inline-formula>\u0000Pb(I0.83Br\u0000<inline-formula> <tex-math>$_{{0}.{17}}text {)}_{{3}}$ </tex-math></inline-formula>\u0000 perovskite film are presented with a high rectification ratio around 514 and an on/off ratio of 1362. The device can continuously operate for \u0000<inline-formula> <tex-math>$10^{{4}}$ </tex-math></inline-formula>\u0000 cycles and the retention time is over \u0000<inline-formula> <tex-math>$10^{{4}}$ </tex-math></inline-formula>\u0000 seconds at \u0000<inline-formula> <tex-math>$85~^{circ }$ </tex-math></inline-formula>\u0000C. In-depth mechanistic analysis reveals that the resistive-switching behavior originates from the migration of iodide ions, which is accompanied by a high rectification ratio produced by the high barrier at the interface between Au and Cs0.05(MA0.17FA\u0000<inline-formula> <tex-math>$_{{0}.{83}}text {)}_{{0}.{95}}$ </tex-math></inline-formula>\u0000 Pb(I0.83Br\u0000<inline-formula> <tex-math>$_{{0}.{17}}text {)}_{{3}}$ </tex-math></inline-formula>\u0000. The maximum effective array size based on the perovskite memristor is up to 1747 with a read margin (RM) of 10%. We believe that this work can pave a way for the development of perovskites thin films in high-density memristive arrays.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"45 11","pages":"2106-2109"},"PeriodicalIF":4.1,"publicationDate":"2024-09-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142222890","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-06DOI: 10.1109/LED.2024.3455338
Xinyi Tang;Yuanbiao Li;Songming Miao;Xiao Chen;Guangwei Xu;Di Lu;Shibing Long
This manuscript aims to enhance the production efficiency while maintaining the electric properties of the dynamic random-access memory capacitor dielectric ZrO2 by optimizing its growth processes. This is achieved through oxidizer engineering by increasing the O3 flux (1k sccm to 10k sccm) and using an extremely fast pulse time (1.5 s) during the atomic layer deposition of ZrO2. This “short pulse - high oxidizer flux” method elevates the k value, effectively reduces leakage, and cuts off the growth time. The application of this method yields ZrO2-based capacitors of low leakage current densities ( ${2}times {10}^{-{8}}$ A/cm2) and low equivalent oxide thicknesses of 0.55 nm (at 0.5 V, 10k sccm O3 flux), holding significant potential as a key facilitator for future ultra-high-density DRAM systems.
{"title":"Oxidizer Engineering of ALD for Efficient Production of ZrO2 Capacitors in DRAM","authors":"Xinyi Tang;Yuanbiao Li;Songming Miao;Xiao Chen;Guangwei Xu;Di Lu;Shibing Long","doi":"10.1109/LED.2024.3455338","DOIUrl":"10.1109/LED.2024.3455338","url":null,"abstract":"This manuscript aims to enhance the production efficiency while maintaining the electric properties of the dynamic random-access memory capacitor dielectric ZrO2 by optimizing its growth processes. This is achieved through oxidizer engineering by increasing the O3 flux (1k sccm to 10k sccm) and using an extremely fast pulse time (1.5 s) during the atomic layer deposition of ZrO2. This “short pulse - high oxidizer flux” method elevates the k value, effectively reduces leakage, and cuts off the growth time. The application of this method yields ZrO2-based capacitors of low leakage current densities (\u0000<inline-formula> <tex-math>${2}times {10}^{-{8}}$ </tex-math></inline-formula>\u0000 A/cm2) and low equivalent oxide thicknesses of 0.55 nm (at 0.5 V, 10k sccm O3 flux), holding significant potential as a key facilitator for future ultra-high-density DRAM systems.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"45 11","pages":"2114-2117"},"PeriodicalIF":4.1,"publicationDate":"2024-09-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142222891","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-06DOI: 10.1109/LED.2024.3455336
Gaoli Xiang;Zhigang Lu;Peng Gao;Jingrui Duan;Yuan Zheng;Zhanliang Wang;Shaomeng Wang;Huarong Gong;Yubin Gong
In order to address the high-order mode (HOM) oscillation that may affect the stability of traveling wave tubes (TWTs), a new strategy called conformally loaded metasurface filter (MF) has been proposed. By loading MF into the waveguide type slow wave structure (SWS), the frequency-selective transmission properties of MF can confine the operating mode in the SWS, while the nonoperating modes are transmitted out. Therefore, the amplitude of HOMs is limited, even if synchronization conditions are met, thereby, the risk of HOM oscillation is reduced. Taking the staggered double grating slow wave structure (SDG-SWS) as an example, the effectiveness of the strategy was verified. In addition, MF is easy to manufacture, which makes it have promising applications in high-power and high-frequency THz amplifiers.
高阶模式（HOM）振荡可能会影响行波管（TWT）的稳定性，为了解决这一问题，有人提出了一种新策略，即保形加载元表面滤波器（MF）。通过在波导型慢波结构（SWS）中加载 MF，MF 的频率选择传输特性可以将工作模式限制在 SWS 中，而将非工作模式传输出去。因此，即使满足同步条件，HOM 的振幅也会受到限制，从而降低 HOM 震荡的风险。以交错双光栅慢波结构（SDG-SWS）为例，验证了该策略的有效性。此外，MF 易于制造，因此在大功率和高频太赫兹放大器中具有广阔的应用前景。
{"title":"High-Order Mode Suppression in Traveling Wave Tube Based on Conformally Loaded Metasurface Filter","authors":"Gaoli Xiang;Zhigang Lu;Peng Gao;Jingrui Duan;Yuan Zheng;Zhanliang Wang;Shaomeng Wang;Huarong Gong;Yubin Gong","doi":"10.1109/LED.2024.3455336","DOIUrl":"10.1109/LED.2024.3455336","url":null,"abstract":"In order to address the high-order mode (HOM) oscillation that may affect the stability of traveling wave tubes (TWTs), a new strategy called conformally loaded metasurface filter (MF) has been proposed. By loading MF into the waveguide type slow wave structure (SWS), the frequency-selective transmission properties of MF can confine the operating mode in the SWS, while the nonoperating modes are transmitted out. Therefore, the amplitude of HOMs is limited, even if synchronization conditions are met, thereby, the risk of HOM oscillation is reduced. Taking the staggered double grating slow wave structure (SDG-SWS) as an example, the effectiveness of the strategy was verified. In addition, MF is easy to manufacture, which makes it have promising applications in high-power and high-frequency THz amplifiers.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"45 11","pages":"2189-2192"},"PeriodicalIF":4.1,"publicationDate":"2024-09-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142222899","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-05DOI: 10.1109/LED.2024.3454638
Nilesh Pandey;Yogesh Singh Chauhan;Leonard F. Register;Sanjay K. Banerjee
Recent research on CMOS-compatible FETs aims at aggressive scaling, targeting advanced performance nodes (7 nm - 14 nm), with the ultimate scalability limit posed by direct source-to-drain tunneling (DSDT). This letter investigates the impact of multi-domain dynamics in the ferroelectric gate dielectric on FeFET scalability. Coupled solutions of 2-D Poisson’s equation with the ferroelectric’s 2-D thermodynamics model (depolarizing energy + gradient energy + free energy) are the basis of a phase-field model. Varying ferroelectric and dielectric layer thicknesses can be used to engineer domain density. Minimal DSDT, maximum ON/OFF current ratio, and maximum memory window (MW) are possible when a single domain wall (domain density = 2) is located near the mid-channel. Additional domain walls increase DSDT. Furthermore, the drain electric field shifts the domain wall towards the source, increasing DSDT. Spatial gradient in polarization drastically impacts DSDT, with hard domain walls exhibiting lower DSDT due to increased polarization gradient. Our study predicts an optimal physical gate length of 12 nm (domain density = 2) with I $_{textit {ON}}$ /I $_{textit {OFF}}~sim ~{1}times {10} ^{{6}}$ and subthreshold slope $sim ~100$ mV/dec.
{"title":"Multi-Domain Dynamics and Ultimate Scalability of CMOS-Compatible FeFETs","authors":"Nilesh Pandey;Yogesh Singh Chauhan;Leonard F. Register;Sanjay K. Banerjee","doi":"10.1109/LED.2024.3454638","DOIUrl":"10.1109/LED.2024.3454638","url":null,"abstract":"Recent research on CMOS-compatible FETs aims at aggressive scaling, targeting advanced performance nodes (7 nm - 14 nm), with the ultimate scalability limit posed by direct source-to-drain tunneling (DSDT). This letter investigates the impact of multi-domain dynamics in the ferroelectric gate dielectric on FeFET scalability. Coupled solutions of 2-D Poisson’s equation with the ferroelectric’s 2-D thermodynamics model (depolarizing energy + gradient energy + free energy) are the basis of a phase-field model. Varying ferroelectric and dielectric layer thicknesses can be used to engineer domain density. Minimal DSDT, maximum ON/OFF current ratio, and maximum memory window (MW) are possible when a single domain wall (domain density = 2) is located near the mid-channel. Additional domain walls increase DSDT. Furthermore, the drain electric field shifts the domain wall towards the source, increasing DSDT. Spatial gradient in polarization drastically impacts DSDT, with hard domain walls exhibiting lower DSDT due to increased polarization gradient. Our study predicts an optimal physical gate length of 12 nm (domain density = 2) with I\u0000<inline-formula> <tex-math>$_{textit {ON}}$ </tex-math></inline-formula>\u0000/I\u0000<inline-formula> <tex-math>$_{textit {OFF}}~sim ~{1}times {10} ^{{6}}$ </tex-math></inline-formula>\u0000 and subthreshold slope \u0000<inline-formula> <tex-math>$sim ~100$ </tex-math></inline-formula>\u0000 mV/dec.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"45 11","pages":"2098-2101"},"PeriodicalIF":4.1,"publicationDate":"2024-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142222892","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-04DOI: 10.1109/LED.2024.3454294
Om Kumar Prasad;Sridhar Chandrasekaran;Mari Napari;Irwan Purnama;Asep Nugroho;Dimitra G. Georgiadou;Chin-Han Chung;Kow-Ming Chang;Firman M. Simanjuntak
We observe that $gamma $ -ray radiation affects the formation of the conducting bridge in Ag/Ti/Al:HfO2/Pt devices. We suggest that the $gamma $ -ray breaks Hf-O bonds and affects the properties of metal/insulator interfaces. The radiation-induced interfacial layers promote the transition from write-once-read-many times (WORM) to reversible switching memories. The devices that undergo a higher radiation exposure exhibit a higher forming voltage that we could exploit to sense radiation; an electrical circuit to harness this phenomenon is also proposed. We also observe that the devices exhibit self-healing behavior, where the forming behavior restores once the radiation energy is released. The switching mechanism is explained and proposed to elucidate this phenomenon. This study not only provides insight into the development of memristor devices for space application but also their potential as multipurpose elements for reconfigurable circuits.
{"title":"γ-Ray-Induced Effects in Al:HfO₂-Based Memristor Devices for Memory and Sensor Applications","authors":"Om Kumar Prasad;Sridhar Chandrasekaran;Mari Napari;Irwan Purnama;Asep Nugroho;Dimitra G. Georgiadou;Chin-Han Chung;Kow-Ming Chang;Firman M. Simanjuntak","doi":"10.1109/LED.2024.3454294","DOIUrl":"10.1109/LED.2024.3454294","url":null,"abstract":"We observe that \u0000<inline-formula> <tex-math>$gamma $ </tex-math></inline-formula>\u0000-ray radiation affects the formation of the conducting bridge in Ag/Ti/Al:HfO2/Pt devices. We suggest that the \u0000<inline-formula> <tex-math>$gamma $ </tex-math></inline-formula>\u0000-ray breaks Hf-O bonds and affects the properties of metal/insulator interfaces. The radiation-induced interfacial layers promote the transition from write-once-read-many times (WORM) to reversible switching memories. The devices that undergo a higher radiation exposure exhibit a higher forming voltage that we could exploit to sense radiation; an electrical circuit to harness this phenomenon is also proposed. We also observe that the devices exhibit self-healing behavior, where the forming behavior restores once the radiation energy is released. The switching mechanism is explained and proposed to elucidate this phenomenon. This study not only provides insight into the development of memristor devices for space application but also their potential as multipurpose elements for reconfigurable circuits.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"45 11","pages":"2082-2085"},"PeriodicalIF":4.1,"publicationDate":"2024-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142222896","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The large-scale fabrication of three-terminal magnetic tunnel junctions (MTJs) with high yield is becoming increasingly crucial, especially with the growing interest in spin-orbit torque (SOT) magnetic random access memory (MRAM) as the next generation of MRAM technology. To achieve high yield and consistent device performance in MTJs with perpendicular magnetic anisotropy, an integration flow has been developed that incorporates special MTJ etching technique and other CMOS-compatible processes on a 300 mm wafer manufacturing platform. Systematic studies have been conducted on device performance and statistical uniformity, encompassing magnetic properties, electrical switching behavior, and reliability. Achievements include a switching current of $680~mu $ A at 2 ns, a TMR as high as 119%, ultra-high endurance (over $10^{{12}}$ cycles), and excellent uniformity in the fabricated SOT-MTJ devices, with a yield of up to 99.6%. The proposed integration process, featuring high yield, is anticipated to streamline the mass production of SOT-MRAM.
{"title":"Achieving High Yield of Perpendicular SOT-MTJ Manufactured on 300 mm Wafers","authors":"Wenlong Yang;Zhenghui Ji;Yang Gao;Kaiyuan Zhou;Qijun Guo;Dinggui Zeng;Shasha Wang;Ming Wang;Lijie Shen;Guilin Chen;Yihui Sun;Enlong Liu;Shikun He","doi":"10.1109/LED.2024.3454609","DOIUrl":"10.1109/LED.2024.3454609","url":null,"abstract":"The large-scale fabrication of three-terminal magnetic tunnel junctions (MTJs) with high yield is becoming increasingly crucial, especially with the growing interest in spin-orbit torque (SOT) magnetic random access memory (MRAM) as the next generation of MRAM technology. To achieve high yield and consistent device performance in MTJs with perpendicular magnetic anisotropy, an integration flow has been developed that incorporates special MTJ etching technique and other CMOS-compatible processes on a 300 mm wafer manufacturing platform. Systematic studies have been conducted on device performance and statistical uniformity, encompassing magnetic properties, electrical switching behavior, and reliability. Achievements include a switching current of \u0000<inline-formula> <tex-math>$680~mu $ </tex-math></inline-formula>\u0000A at 2 ns, a TMR as high as 119%, ultra-high endurance (over \u0000<inline-formula> <tex-math>$10^{{12}}$ </tex-math></inline-formula>\u0000 cycles), and excellent uniformity in the fabricated SOT-MTJ devices, with a yield of up to 99.6%. The proposed integration process, featuring high yield, is anticipated to streamline the mass production of SOT-MRAM.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"45 11","pages":"2094-2097"},"PeriodicalIF":4.1,"publicationDate":"2024-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142222894","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Homogeneous and defect-minimized perovskite films are critical for efficient perovskite solar cells (PSCs). Herein, we introduce a small molecule with electron-rich carbonyl and cyano groups in the perovskite films to regulate the crystallization process and passivate defects. The electron-rich carbonyl and cyano groups of the FDP molecules could coordinate with Pb $^{{2}+}$ dangling bonds and reduce the density of VPb. The synergistic effect of crystallization modulation and defect passivation could significantly improve film quality and suppress carrier nonradiative recombination. As a result, the champion devices realize an increased efficiency of 23.39% for small areas (0.08 cm $^{{2}}text {)}$ and a high efficiency of 20.69% for larger areas (1 cm $^{{2}}text {)}$ . The inverted perovskite modules with an aperture area of 45 cm2 obtain a champion efficiency of 20.38%, indicating a teeny efficiency loss of 1.5% from 1 to 45 cm2. These findings provide an innovative avenue to achieve high-efficiency perovskite modules and facilitate the commercialization of large-area PSCs.
{"title":"Synergistic Carbonyl and Cyano Passivation for Efficient Blade-Coated Perovskite Solar Cells","authors":"Xinxin Li;Long Zhou;Qianyu Chen;Yunlong Zhang;Xinyuan Feng;Yuanbo Du;Dazheng Chen;Weidong Zhu;He Xi;Jincheng Zhang;Chunfu Zhang;Yue Hao","doi":"10.1109/LED.2024.3454522","DOIUrl":"10.1109/LED.2024.3454522","url":null,"abstract":"Homogeneous and defect-minimized perovskite films are critical for efficient perovskite solar cells (PSCs). Herein, we introduce a small molecule with electron-rich carbonyl and cyano groups in the perovskite films to regulate the crystallization process and passivate defects. The electron-rich carbonyl and cyano groups of the FDP molecules could coordinate with Pb\u0000<inline-formula> <tex-math>$^{{2}+}$ </tex-math></inline-formula>\u0000 dangling bonds and reduce the density of VPb. The synergistic effect of crystallization modulation and defect passivation could significantly improve film quality and suppress carrier nonradiative recombination. As a result, the champion devices realize an increased efficiency of 23.39% for small areas (0.08 cm\u0000<inline-formula> <tex-math>$^{{2}}text {)}$ </tex-math></inline-formula>\u0000 and a high efficiency of 20.69% for larger areas (1 cm\u0000<inline-formula> <tex-math>$^{{2}}text {)}$ </tex-math></inline-formula>\u0000. The inverted perovskite modules with an aperture area of 45 cm2 obtain a champion efficiency of 20.38%, indicating a teeny efficiency loss of 1.5% from 1 to 45 cm2. These findings provide an innovative avenue to achieve high-efficiency perovskite modules and facilitate the commercialization of large-area PSCs.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"45 11","pages":"2162-2165"},"PeriodicalIF":4.1,"publicationDate":"2024-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142222898","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-04DOI: 10.1109/LED.2024.3454508
Xinlun Xie;Guoxiang Shu;Jiacai Liao;Huaxing Pan;Shaochen Ma;Jiawei Tang;Siyuan Liu;Mingze Li;Wenlong He
A sub-terahertz band dual-sheet-beam backward wave oscillator (BWO) highlighted with wide tunable bandwidth and enhanced radiation power is presented in this letter. This design includes two key innovations: 1) a novel V-shaped orthogonal grating waveguide (VOGW) operating in TM $_{{21}}^{text {++}}$ high-order mode (++ represents the electric field vectors within two beam tunnel regions are in-phase) is proposed, which exhibits higher coupling impedance compared with the traditional OGW; 2) a novel E-plane L-bend overmoded coupler with a tapered transition is designed for efficient power extraction of the TM $_{{21}}^{text {++}}$ mode. For verification, an interaction circuit made of 40-period VOGW and two identical couplers was fabricated, and the measured results agreed well with simulation predictions having considered conduct loss and assembly errors. PIC simulation for this innovative BWO predicts a stable radiation power of 182.4-317.5 W across 246.8-265.6 GHz, demonstrating a power increment of up to 43 W (~15%) in comparison to the OGW based BWO.
{"title":"A Novel Dual-Sheet-Beam Backward Wave Oscillator Based on Sub-Terahertz Band V-Shaped Orthogonal Grating Waveguide","authors":"Xinlun Xie;Guoxiang Shu;Jiacai Liao;Huaxing Pan;Shaochen Ma;Jiawei Tang;Siyuan Liu;Mingze Li;Wenlong He","doi":"10.1109/LED.2024.3454508","DOIUrl":"10.1109/LED.2024.3454508","url":null,"abstract":"A sub-terahertz band dual-sheet-beam backward wave oscillator (BWO) highlighted with wide tunable bandwidth and enhanced radiation power is presented in this letter. This design includes two key innovations: 1) a novel V-shaped orthogonal grating waveguide (VOGW) operating in TM\u0000<inline-formula> <tex-math>$_{{21}}^{text {++}}$ </tex-math></inline-formula>\u0000 high-order mode (++ represents the electric field vectors within two beam tunnel regions are in-phase) is proposed, which exhibits higher coupling impedance compared with the traditional OGW; 2) a novel E-plane L-bend overmoded coupler with a tapered transition is designed for efficient power extraction of the TM\u0000<inline-formula> <tex-math>$_{{21}}^{text {++}}$ </tex-math></inline-formula>\u0000 mode. For verification, an interaction circuit made of 40-period VOGW and two identical couplers was fabricated, and the measured results agreed well with simulation predictions having considered conduct loss and assembly errors. PIC simulation for this innovative BWO predicts a stable radiation power of 182.4-317.5 W across 246.8-265.6 GHz, demonstrating a power increment of up to 43 W (~15%) in comparison to the OGW based BWO.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"45 11","pages":"2201-2204"},"PeriodicalIF":4.1,"publicationDate":"2024-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142222901","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-04DOI: 10.1109/LED.2024.3454235
Mao-Wang Lu;Sai-Yan Chen;Xue-Li Cao;An-Qi Zhang
Goos-Hänchen effect of electrons in a layered semiconductor quantum microstructure is explored. Thanks to Rashba spin-orbit coupling, GH shifts depend obviously on electron spins, causing the dynamic spin polarization in the spatial domain. Besides, this spin polarization can be modulated by the interfacial electric field or the layer thickness. These interesting findings may be helpful for design of the spatial electron-spin splitter.
{"title":"Spatial Electron-Spin Splitter Based on Rashba Spin-Orbit-Coupling Modulated Layered-Semiconductor Quantum Microstructure","authors":"Mao-Wang Lu;Sai-Yan Chen;Xue-Li Cao;An-Qi Zhang","doi":"10.1109/LED.2024.3454235","DOIUrl":"10.1109/LED.2024.3454235","url":null,"abstract":"Goos-Hänchen effect of electrons in a layered semiconductor quantum microstructure is explored. Thanks to Rashba spin-orbit coupling, GH shifts depend obviously on electron spins, causing the dynamic spin polarization in the spatial domain. Besides, this spin polarization can be modulated by the interfacial electric field or the layer thickness. These interesting findings may be helpful for design of the spatial electron-spin splitter.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"45 11","pages":"2066-2069"},"PeriodicalIF":4.1,"publicationDate":"2024-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142222897","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-04DOI: 10.1109/LED.2024.3454356
Zhiqian Wan;Yi Lin;Kai Yang;Yunqi Fu
Quantum microwave measurement based on Rydberg atoms is a novel microwave measurement technique. To improve its measurement sensitivity over a broadband, this letter presents a mechanically tunable electric field enhancement device, loaded on the the vapor cell. By adjusting the length of the split ring resonator, an electric field enhancement capability of more than 30 dB over a bandwidth of 0.52 GHz to 1.54 GHz is realized in simulation. The experimental results show that its resonance frequency covers from 0.52 GHz to 1.86 GHz with a relative bandwidth of 113%, exhibiting excellent broadband performance. This broadband electric field enhancement device is expected to further improve the performance of quantum microwave measurements.
{"title":"Mechanically Tunable Broadband Electric Field Enhancement Resonator for Quantum Microwave Measurements","authors":"Zhiqian Wan;Yi Lin;Kai Yang;Yunqi Fu","doi":"10.1109/LED.2024.3454356","DOIUrl":"10.1109/LED.2024.3454356","url":null,"abstract":"Quantum microwave measurement based on Rydberg atoms is a novel microwave measurement technique. To improve its measurement sensitivity over a broadband, this letter presents a mechanically tunable electric field enhancement device, loaded on the the vapor cell. By adjusting the length of the split ring resonator, an electric field enhancement capability of more than 30 dB over a bandwidth of 0.52 GHz to 1.54 GHz is realized in simulation. The experimental results show that its resonance frequency covers from 0.52 GHz to 1.86 GHz with a relative bandwidth of 113%, exhibiting excellent broadband performance. This broadband electric field enhancement device is expected to further improve the performance of quantum microwave measurements.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"45 11","pages":"2237-2240"},"PeriodicalIF":4.1,"publicationDate":"2024-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142222895","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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