Pub Date : 2025-09-25DOI: 10.1109/LED.2025.3614511
Sandeep Semwal;Pin Su
This work leverages the unique nature of CFETs for superior ambipolar conduction characteristics and explores CFET-based designs for frequency doubling, phase following, and phase reversal operations. The results highlight the advantages of CFETs for analog signal modulation and pave the way for future communication systems using logic-compatible technology.
{"title":"Exploration of Analog Signal Modulation With Complementary Field-Effect Transistor (CFET)","authors":"Sandeep Semwal;Pin Su","doi":"10.1109/LED.2025.3614511","DOIUrl":"https://doi.org/10.1109/LED.2025.3614511","url":null,"abstract":"This work leverages the unique nature of CFETs for superior ambipolar conduction characteristics and explores CFET-based designs for frequency doubling, phase following, and phase reversal operations. The results highlight the advantages of CFETs for analog signal modulation and pave the way for future communication systems using logic-compatible technology.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 12","pages":"2345-2348"},"PeriodicalIF":4.5,"publicationDate":"2025-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145665805","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-08-29DOI: 10.1109/LED.2025.3585313
Baiqing Jiang;Dongyang Wu;Qianwen Zhao;Kaihua Lou;Yuelei Zhao;Yan Zhou;C. Tian;Chong Bi
Presents corrections to the paper, (Corrections to “Write Asymmetry of Spin-Orbit Torque Memory Induced by In-Plane Magnetic Fields”).
对“面内磁场诱导的自旋-轨道转矩记忆的写入不对称性”进行了修正。
{"title":"Corrections to “Write Asymmetry of Spin-Orbit Torque Memory Induced by In-Plane Magnetic Fields”","authors":"Baiqing Jiang;Dongyang Wu;Qianwen Zhao;Kaihua Lou;Yuelei Zhao;Yan Zhou;C. Tian;Chong Bi","doi":"10.1109/LED.2025.3585313","DOIUrl":"https://doi.org/10.1109/LED.2025.3585313","url":null,"abstract":"Presents corrections to the paper, (Corrections to “Write Asymmetry of Spin-Orbit Torque Memory Induced by In-Plane Magnetic Fields”).","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 9","pages":"1656-1656"},"PeriodicalIF":4.5,"publicationDate":"2025-08-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11145052","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144918382","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-08-29DOI: 10.1109/LED.2025.3597115
{"title":"Call for Papers for a Special Issue of IEEE Transactions on Electron Devices: Wide Band Gap Semiconductors for Automotive Applications","authors":"","doi":"10.1109/LED.2025.3597115","DOIUrl":"https://doi.org/10.1109/LED.2025.3597115","url":null,"abstract":"","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 9","pages":"1660-1661"},"PeriodicalIF":4.5,"publicationDate":"2025-08-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11145047","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144918344","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-08-29DOI: 10.1109/LED.2025.3597117
{"title":"Call for Papers for a Special Issue of IEEE Transactions on Electron Devices: Reliability of Advanced Nodes","authors":"","doi":"10.1109/LED.2025.3597117","DOIUrl":"https://doi.org/10.1109/LED.2025.3597117","url":null,"abstract":"","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 9","pages":"1662-1663"},"PeriodicalIF":4.5,"publicationDate":"2025-08-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11145070","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144918144","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-08-29DOI: 10.1109/LED.2025.3597119
{"title":"Call for Papers for a Special Issue of IEEE Transactions on Electron Devices: Ultrawide Band Gap Semiconductor Devices for RF, Power and Optoelectronic Applications","authors":"","doi":"10.1109/LED.2025.3597119","DOIUrl":"https://doi.org/10.1109/LED.2025.3597119","url":null,"abstract":"","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 9","pages":"1664-1665"},"PeriodicalIF":4.5,"publicationDate":"2025-08-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11145050","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144918394","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-08-29DOI: 10.1109/LED.2025.3597122
{"title":"IEEE Transactions on Electron Devices Table of Contents","authors":"","doi":"10.1109/LED.2025.3597122","DOIUrl":"https://doi.org/10.1109/LED.2025.3597122","url":null,"abstract":"","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 9","pages":"1666-C3"},"PeriodicalIF":4.5,"publicationDate":"2025-08-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11145053","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144918412","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-08-29DOI: 10.1109/LED.2025.3597113
{"title":"IEEE Electron Device Letters Information for Authors","authors":"","doi":"10.1109/LED.2025.3597113","DOIUrl":"https://doi.org/10.1109/LED.2025.3597113","url":null,"abstract":"","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 9","pages":"1659-1659"},"PeriodicalIF":4.5,"publicationDate":"2025-08-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11145051","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144917302","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In this study, AlGaN/GaN light-emitting HEMT (LE-HEMT) with varying numbers of InGaN layers as both multi-channels (MCs) and multiple-quantum-wells (MQWs) are fabricated, with highest luminance in record being achieved on GaN HEMT epitaxial wafers. The proposed structure achieves true epitaxially monolithic integration by directly incorporating MQWs with the two-dimensional electron gas channels. It is demonstrated that an outstanding switching ratio of ${I}_{text {on}}$ /${I}_{text {off}} = 10^{{8}}{}$ is achieved, despite the incorporation of MCs. A luminance of up to $2.1 times 10^{{5}}$ cd/m2 and an outstanding light output power of 13 W/cm2 are obtained, achieving the highest reported luminance for LE-HEMTs. Additionally, the LE-HEMT can also be utilized as an on-chip photodetector, with ultra-low dark current of fA level. Under 365 nm UV irradiation, the LE-HEMT exhibits extremely high ratio of photocurrent to dark current (${I}_{text {light}}$ /${I}_{text {dark}}text {)}$ of about $10^{{7}}$ and an outstanding specific detectivity of $5.2 times 10^{{14}}$ Jones at ${V}_{text {DD}} = $ - 5 V under light power density of 1 mW/cm2. This work provides a novel approach for the monolithic integration of display pixel, its driver device, and also on-chip photodetectors, paving the way for potential applications in both high-refresh-rate Micro-LED displays and full-duplex visible light communications.
{"title":"Multi-Channel LE-HEMT With Highest Luminance in Record Toward Micro-Display and On-Chip High-Detectivity Photodetectors","authors":"Jijun Zhu;Fei Wang;Tianci Miao;Kai Cheng;Peng Xiang;Luqiao Yin;Aiying Guo;Gaoyu Dai;Jingjing Liu;Kailin Ren;Jianhua Zhang","doi":"10.1109/LED.2025.3601846","DOIUrl":"https://doi.org/10.1109/LED.2025.3601846","url":null,"abstract":"In this study, AlGaN/GaN light-emitting HEMT (LE-HEMT) with varying numbers of InGaN layers as both multi-channels (MCs) and multiple-quantum-wells (MQWs) are fabricated, with highest luminance in record being achieved on GaN HEMT epitaxial wafers. The proposed structure achieves true epitaxially monolithic integration by directly incorporating MQWs with the two-dimensional electron gas channels. It is demonstrated that an outstanding switching ratio of <inline-formula> <tex-math>${I}_{text {on}}$ </tex-math></inline-formula>/<inline-formula> <tex-math>${I}_{text {off}} = 10^{{8}}{}$ </tex-math></inline-formula> is achieved, despite the incorporation of MCs. A luminance of up to <inline-formula> <tex-math>$2.1 times 10^{{5}}$ </tex-math></inline-formula> cd/m2 and an outstanding light output power of 13 W/cm2 are obtained, achieving the highest reported luminance for LE-HEMTs. Additionally, the LE-HEMT can also be utilized as an on-chip photodetector, with ultra-low dark current of fA level. Under 365 nm UV irradiation, the LE-HEMT exhibits extremely high ratio of photocurrent to dark current (<inline-formula> <tex-math>${I}_{text {light}}$ </tex-math></inline-formula>/<inline-formula> <tex-math>${I}_{text {dark}}text {)}$ </tex-math></inline-formula> of about <inline-formula> <tex-math>$10^{{7}}$ </tex-math></inline-formula> and an outstanding specific detectivity of <inline-formula> <tex-math>$5.2 times 10^{{14}}$ </tex-math></inline-formula> Jones at <inline-formula> <tex-math>${V}_{text {DD}} = $ </tex-math></inline-formula> - 5 V under light power density of 1 mW/cm2. This work provides a novel approach for the monolithic integration of display pixel, its driver device, and also on-chip photodetectors, paving the way for potential applications in both high-refresh-rate Micro-LED displays and full-duplex visible light communications.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 10","pages":"1721-1724"},"PeriodicalIF":4.5,"publicationDate":"2025-08-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145315320","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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