A novel S-band lightweight relativistic magnetron, packaged with permanent magnets and equipped with a compact axial extraction structure, is proposed. In this design, five alternately arranged anode vanes in a 10-cavity rising-sun magnetron are connected via a ring-like structure to enhance the $pi $ -mode coupling capability. This innovative ring extractor significantly reduces the overall radial dimension of the magnetron, making it consistent with the radius of the resonant cavity structure. Namely, the output structure introduces no additional radial size. Consequently, the proposed design effectively balances structural compactness and high conversion efficiency simultaneously. The reduced output aperture enables the use of a lightweight permanent magnet, bringing the total weight—including both magnetron and magnets—to only 20 kg. Finally, experiments have been conducted to validate the device’s performance, which demonstrates that, under a diode voltage of 172 kV, the proposed relativistic magnetron with permanent magnet achieves an average output power of 175 MW with a conversion efficiency of 30.8%. The combination of compact size and relatively high conversion efficiency makes this device particularly suitable for portable high-power microwave applications.
{"title":"A Compact and Lightweight Relativistic Magnetron With Permanent Magnets","authors":"Renjie Cheng;Yuying Wang;Jiaoyin Wang;Yanlin Deng;Bo Zhao;Tingxu Chen;Haiyang Wang;Hao Li;Biao Hu;Tianming Li","doi":"10.1109/LED.2025.3599640","DOIUrl":"https://doi.org/10.1109/LED.2025.3599640","url":null,"abstract":"A novel S-band lightweight relativistic magnetron, packaged with permanent magnets and equipped with a compact axial extraction structure, is proposed. In this design, five alternately arranged anode vanes in a 10-cavity rising-sun magnetron are connected via a ring-like structure to enhance the <inline-formula> <tex-math>$pi $ </tex-math></inline-formula> -mode coupling capability. This innovative ring extractor significantly reduces the overall radial dimension of the magnetron, making it consistent with the radius of the resonant cavity structure. Namely, the output structure introduces no additional radial size. Consequently, the proposed design effectively balances structural compactness and high conversion efficiency simultaneously. The reduced output aperture enables the use of a lightweight permanent magnet, bringing the total weight—including both magnetron and magnets—to only 20 kg. Finally, experiments have been conducted to validate the device’s performance, which demonstrates that, under a diode voltage of 172 kV, the proposed relativistic magnetron with permanent magnet achieves an average output power of 175 MW with a conversion efficiency of 30.8%. The combination of compact size and relatively high conversion efficiency makes this device particularly suitable for portable high-power microwave applications.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 10","pages":"1865-1868"},"PeriodicalIF":4.5,"publicationDate":"2025-08-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145141732","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Wide-bandgap metal oxide semiconductors possess suitable characteristics for neuromorphic visual systems, including high light absorption efficiency and persistent photoconductivity. However, their limited responsivity to low-energy photons has hindered applications requiring color discrimination and multi-spectral signal processing. To address this challenge, we developed an oxygen-deficient IGZO/HfOx heterojunction memristor with multiwavelength response. The device demonstrates synaptic functionality under 350-680 nm illuminations, such as excitatory postsynaptic current, paired-pulse facilitation, and image perception-memory integration. Leveraging on the optical potentiation and electrical depression characteristics, the color image recognition has achieved 85.8% accuracy in an artificial neural network. The visible-light response of IGZO is ascribed to the oxygen defect energy levels capable of trapping photo-electrons. This work provides a viable pathway for developing high-efficiency neuromorphic vision systems using wide-bandgap oxide semiconductors with full-spectrum detection capabilities.
{"title":"IGZO/HfOx Heterojunction Optoelectronic Memristor With Multiwavelength Response for Neuromorphic Visual System","authors":"Jiahui Zheng;Zhihao Tao;Zhuangzhuang Li;Xuanyu Shan;Jiulong Sun;Peng Li;Jiaqi Han;Ya Lin;Xiaoning Zhao;Zhongqiang Wang","doi":"10.1109/LED.2025.3599471","DOIUrl":"https://doi.org/10.1109/LED.2025.3599471","url":null,"abstract":"Wide-bandgap metal oxide semiconductors possess suitable characteristics for neuromorphic visual systems, including high light absorption efficiency and persistent photoconductivity. However, their limited responsivity to low-energy photons has hindered applications requiring color discrimination and multi-spectral signal processing. To address this challenge, we developed an oxygen-deficient IGZO/HfOx heterojunction memristor with multiwavelength response. The device demonstrates synaptic functionality under 350-680 nm illuminations, such as excitatory postsynaptic current, paired-pulse facilitation, and image perception-memory integration. Leveraging on the optical potentiation and electrical depression characteristics, the color image recognition has achieved 85.8% accuracy in an artificial neural network. The visible-light response of IGZO is ascribed to the oxygen defect energy levels capable of trapping photo-electrons. This work provides a viable pathway for developing high-efficiency neuromorphic vision systems using wide-bandgap oxide semiconductors with full-spectrum detection capabilities.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 10","pages":"1905-1908"},"PeriodicalIF":4.5,"publicationDate":"2025-08-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145141646","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A re-activatable scandate cathode for a high-current sheet beam electron gun was demonstrated in experiment. The re-activatable scandate cathode was impregnated with high purity emission-active materials composed of $beta $ -Ba2ScAlO5 and Ba3Al2O6, which were synthesized employing the polyacrylamide-assisted sol-gel method. The emission-active materials are essential for the scandate cathode to achieve low hygroscopicity and re-activatability. As a result, the re-activatable scandate cathode exhibits a low mass gain of only 0.005% after 1000 hours in air, and delivers an emission current density of 42 A/cm2 at 1140 °C. The high-performance scandate cathode was integrated into a compact sheet beam electron gun, which features a stepped elliptical focus electrode to enable anisotropic electrostatic compression. At a cathode temperature of 1140 °C and a beam voltage of 24.6 kV, the sheet beam electron gun yields a compressed sheet beam with a peak beam current of 189 mA. During three independent air-exposure, evacuation, and re-activation cycles, the beam current varied by no more than 5%. These findings confirm that the re-activatable scandate cathode is suitable for the high-current sheet beam electron gun.
实验证明了一种用于大电流片束电子枪的可再活化阴极。采用聚丙烯酰胺辅助溶胶-凝胶法制备了由$beta $ -Ba2ScAlO5和Ba3Al2O6组成的高纯发射活性材料，并将其浸渍在可再活化的钪阴极上。发射活性材料是阴极阴极实现低吸湿性和再活化性的必要条件。结果表明，在空气中放置1000小时后，可再活化的鳞片阴极的质量增益只有0.005%，在1140°C时的发射电流密度为42 a /cm2。高性能阴极集成到紧凑的片状电子枪中，该电子枪具有阶梯椭圆聚焦电极，可实现各向异性静电压缩。在阴极温度为1140℃，束流电压为24.6 kV的条件下，电子枪产生的压缩束流峰值电流为189 mA。在三个独立的空气暴露、疏散和再激活周期中，光束电流的变化不超过5%。这些研究结果证实了可再活化阴极适合于大电流片束电子枪。
{"title":"Demonstration of a Re-Activatable Scandate Cathode for a High-Current Sheet Beam Electron Gun","authors":"Zhifang Lyu;Shengkun Jiang;Yasong Fan;Dejun Jin;Jibo Dong;Huarong Gong;Yubin Gong;Jiasong Wang;Pan Pan;Jinjun Feng;Zhaoyun Duan","doi":"10.1109/LED.2025.3599234","DOIUrl":"https://doi.org/10.1109/LED.2025.3599234","url":null,"abstract":"A re-activatable scandate cathode for a high-current sheet beam electron gun was demonstrated in experiment. The re-activatable scandate cathode was impregnated with high purity emission-active materials composed of <inline-formula> <tex-math>$beta $ </tex-math></inline-formula>-Ba2ScAlO5 and Ba3Al2O6, which were synthesized employing the polyacrylamide-assisted sol-gel method. The emission-active materials are essential for the scandate cathode to achieve low hygroscopicity and re-activatability. As a result, the re-activatable scandate cathode exhibits a low mass gain of only 0.005% after 1000 hours in air, and delivers an emission current density of 42 A/cm2 at 1140 °C. The high-performance scandate cathode was integrated into a compact sheet beam electron gun, which features a stepped elliptical focus electrode to enable anisotropic electrostatic compression. At a cathode temperature of 1140 °C and a beam voltage of 24.6 kV, the sheet beam electron gun yields a compressed sheet beam with a peak beam current of 189 mA. During three independent air-exposure, evacuation, and re-activation cycles, the beam current varied by no more than 5%. These findings confirm that the re-activatable scandate cathode is suitable for the high-current sheet beam electron gun.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 10","pages":"1869-1872"},"PeriodicalIF":4.5,"publicationDate":"2025-08-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145141733","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Glass substrates offer excellent properties for high-density package applications due to their low coefficient of thermal expansion, nanometer-scale surface flatness, and minimal dielectric loss. These characteristics make glass substrates well-suited for integrated passive devices. This study presents a high-density 3D via capacitor embedded in a glass substrate. The through-hole glass vias (TGVs) are conformally lined with a TiN/HfO2/TiN stack, using processes that are fully compatible with standard TGV fabrication techniques. The fabricated device exhibited an aspect ratio of 16:1 and achieved a measured capacitance of up to 9.7 nF within a $275~mu $ m $times 220~mu $ m area, corresponding to a capacitance density of 160.33 nF/mm2. Measured electrical performance included an ESR of 237 m $Omega $ and a breakdown voltage of 6.31 ± 0.5 V, demonstrating its suitability for decoupling and power integrity applications.
{"title":"A High-Density 3-D Capacitor Using Through Glass Via Structure","authors":"Su-Geun Kim;Sung-Chai Yoo;Jeongwon Oh;Byung-Wook Min;Jong-Min Yook","doi":"10.1109/LED.2025.3599178","DOIUrl":"https://doi.org/10.1109/LED.2025.3599178","url":null,"abstract":"Glass substrates offer excellent properties for high-density package applications due to their low coefficient of thermal expansion, nanometer-scale surface flatness, and minimal dielectric loss. These characteristics make glass substrates well-suited for integrated passive devices. This study presents a high-density 3D via capacitor embedded in a glass substrate. The through-hole glass vias (TGVs) are conformally lined with a TiN/HfO2/TiN stack, using processes that are fully compatible with standard TGV fabrication techniques. The fabricated device exhibited an aspect ratio of 16:1 and achieved a measured capacitance of up to 9.7 nF within a <inline-formula> <tex-math>$275~mu $ </tex-math></inline-formula>m <inline-formula> <tex-math>$times 220~mu $ </tex-math></inline-formula>m area, corresponding to a capacitance density of 160.33 nF/mm2. Measured electrical performance included an ESR of 237 m <inline-formula> <tex-math>$Omega $ </tex-math></inline-formula> and a breakdown voltage of 6.31 ± 0.5 V, demonstrating its suitability for decoupling and power integrity applications.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 10","pages":"1920-1923"},"PeriodicalIF":4.5,"publicationDate":"2025-08-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145141651","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-08-15DOI: 10.1109/LED.2025.3599158
Hyeong Jun Joo;Gyuhyung Lee;Yoojin Lim;Brendan Hanrahan;Geonwook Yoo
In this study, we investigate depolarization- field effect of an AlGaN barrier layer on ferroelectric GaN HEMTs with an AlScN/HfO2 gate stack (FeHEMT). Both recessed and non-recessed gate structures are fabricated and characterized not only to compare memory window and threshold voltage tunability but also analyze the depolarization-field effect on cycling and endurance properties. Fast ramped pulse I-V measurements reveal the difference between the two structures by excluding the ferroelectric polarization switching of the AlScN layer. Superior ferroelectric switching properties are achieved and maintained due to the reduced AlGaN layer. The recessed-gate FeHEMT is promising for GaN-based emerging memory and neuromorphic devices.
{"title":"Enhanced Reliability of Ferroelectric GaN HEMTs With Reduced Depolarization-Field Effect","authors":"Hyeong Jun Joo;Gyuhyung Lee;Yoojin Lim;Brendan Hanrahan;Geonwook Yoo","doi":"10.1109/LED.2025.3599158","DOIUrl":"https://doi.org/10.1109/LED.2025.3599158","url":null,"abstract":"In this study, we investigate depolarization- field effect of an AlGaN barrier layer on ferroelectric GaN HEMTs with an AlScN/HfO2 gate stack (FeHEMT). Both recessed and non-recessed gate structures are fabricated and characterized not only to compare memory window and threshold voltage tunability but also analyze the depolarization-field effect on cycling and endurance properties. Fast ramped pulse I-V measurements reveal the difference between the two structures by excluding the ferroelectric polarization switching of the AlScN layer. Superior ferroelectric switching properties are achieved and maintained due to the reduced AlGaN layer. The recessed-gate FeHEMT is promising for GaN-based emerging memory and neuromorphic devices.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 10","pages":"1697-1700"},"PeriodicalIF":4.5,"publicationDate":"2025-08-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145315351","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The spin-based probabilistic bit (p-bit) built on magnetic tunnel junction (MTJ) provides a low power and low overhead solution for building high performance Ising machine (IM). In this work, we propose a novel p-bit device that integrates a voltage-controlled magnetic anisotropy (VCMA) MTJ biased by spin-orbit torque (SOT) voltage. The proposed p-bit achieves an energy consumption of approximately 33fJ/bit per operation. A synchronous Ising network utilizing this device demonstrates rapid convergence to near-ground-state solutions when solving a ${13}times {26}$ -vertex Max-Cut problem in simulation. Furthermore, a reconfigurable IM architecture, realized through the coupling of MTJ array, enables an all-spin Ising system capable of addressing various combinatorial optimization problems (COPs). The proposed IM system also exhibits functional reconfigurability among multiple invertible Boolean logic gates, achieving a peak accuracy of 95%. These results highlight the potential of the proposed p-bit as a promising building block for high-speed, low-power and universal Ising machines.
{"title":"A Novel P-bit Unit Based on VGSOT-MTJ for Reconfigurable Ising Machine With Fully Parallel Spin Updating Design","authors":"Wentao Huang;Kaili Zhang;Junlin Wang;Yu Liu;Bolin Zhang;Youguang Zhang;Weisheng Zhao;Lang Zeng;Deming Zhang","doi":"10.1109/LED.2025.3598983","DOIUrl":"https://doi.org/10.1109/LED.2025.3598983","url":null,"abstract":"The spin-based probabilistic bit (p-bit) built on magnetic tunnel junction (MTJ) provides a low power and low overhead solution for building high performance Ising machine (IM). In this work, we propose a novel p-bit device that integrates a voltage-controlled magnetic anisotropy (VCMA) MTJ biased by spin-orbit torque (SOT) voltage. The proposed p-bit achieves an energy consumption of approximately 33fJ/bit per operation. A synchronous Ising network utilizing this device demonstrates rapid convergence to near-ground-state solutions when solving a <inline-formula> <tex-math>${13}times {26}$ </tex-math></inline-formula>-vertex Max-Cut problem in simulation. Furthermore, a reconfigurable IM architecture, realized through the coupling of MTJ array, enables an all-spin Ising system capable of addressing various combinatorial optimization problems (COPs). The proposed IM system also exhibits functional reconfigurability among multiple invertible Boolean logic gates, achieving a peak accuracy of 95%. These results highlight the potential of the proposed p-bit as a promising building block for high-speed, low-power and universal Ising machines.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 10","pages":"1889-1892"},"PeriodicalIF":4.5,"publicationDate":"2025-08-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145141730","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-08-14DOI: 10.1109/LED.2025.3598920
Jiacai Liao;Guoxiang Shu;Xinqiang Li;Binbin Shi;Shengtao Hong;Longshen Huang;Cunjun Ruan;Wenlong He
A novel slow wave structure (SWS) featuring an innovative sine-shape staggered waveguide (SSW) and dual-mode operation has been developed for ultra-wideband sheet beam travelling wave tubes. In contrast to the double-staggered grating SWS, the SSW SWS is equivalent to reducing the grating height, enabling the broadening of the operational bandwidth while maintaining interaction impedance characteristics. Numerical simulations demonstrate exceptional broadband characteristics with ${S}_{{11}}$ below -15.3 dB and ${S}_{{21}}$ exceeding -8.5 dB across 237-324 GHz (87 GHz), achieving 31.0% fractional bandwidth. Cold-test results are consistent with the simulation results having considered fabrication tolerances, electromagnetic leakage, and surface roughness effects. PIC simulations predict good performance, achieving 65.0 W output power over a 76 GHz bandwidth (236-312 GHz, 27.8% fractional bandwidth), with a peak output power of 253.0 W at 250 GHz.
{"title":"Study of an Ultra-Wideband Sine-Shape Staggered Waveguide for a Terahertz Band Sheet Beam TWT","authors":"Jiacai Liao;Guoxiang Shu;Xinqiang Li;Binbin Shi;Shengtao Hong;Longshen Huang;Cunjun Ruan;Wenlong He","doi":"10.1109/LED.2025.3598920","DOIUrl":"https://doi.org/10.1109/LED.2025.3598920","url":null,"abstract":"A novel slow wave structure (SWS) featuring an innovative sine-shape staggered waveguide (SSW) and dual-mode operation has been developed for ultra-wideband sheet beam travelling wave tubes. In contrast to the double-staggered grating SWS, the SSW SWS is equivalent to reducing the grating height, enabling the broadening of the operational bandwidth while maintaining interaction impedance characteristics. Numerical simulations demonstrate exceptional broadband characteristics with <inline-formula> <tex-math>${S}_{{11}}$ </tex-math></inline-formula> below -15.3 dB and <inline-formula> <tex-math>${S}_{{21}}$ </tex-math></inline-formula> exceeding -8.5 dB across 237-324 GHz (87 GHz), achieving 31.0% fractional bandwidth. Cold-test results are consistent with the simulation results having considered fabrication tolerances, electromagnetic leakage, and surface roughness effects. PIC simulations predict good performance, achieving 65.0 W output power over a 76 GHz bandwidth (236-312 GHz, 27.8% fractional bandwidth), with a peak output power of 253.0 W at 250 GHz.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 10","pages":"1873-1876"},"PeriodicalIF":4.5,"publicationDate":"2025-08-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145141734","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-08-14DOI: 10.1109/LED.2025.3598823
Yao Ni;Yumo Zhang;Jingjie Lin;Xingji Liu;Yue Yu;Lu Liu;Wei Zhong;Yayi Chen;Rongsheng Chen;Hoi Sing Kwok;Yuan Liu
Neuromorphic electronics, which integrate sensing, storage, and computing to boost efficiency and performance, offer a low-cost, energy-efficient alternative for temporal data processing with edge computing potential when applied to reservoir computing (RC). However, current neuromorphic RC systems struggle with diverse spatial information inputs due to device design limits. Here, we present the first artificial dendrite horizontally cascaded by Ga-Sn-O (GTO)-based synaptic transistors with efficient electron-ion coupled films as the gate dielectric. This design allows unlimited lateral gate expansion, source/drain and gate interchangeability, and sustains a microampere-level output current across a record centimeter-scale gate-channel distance. The artificial dendrite maintains stable weight modulation through $10^{mathbf {{5}}}$ electrical cycles and $10^{mathbf {{7}}}$ bending cycles, with performance restorable via dielectric film replacement. This work pioneers the demonstration of spatiotemporally correlated reservoir computing using artificial dendrites-based RC systems, achieving highly accurate recognition and introducing a new paradigm to the field.
{"title":"Transistor-Structured Artificial Dendrites for Spatiotemporally Correlated Reservoir Computing","authors":"Yao Ni;Yumo Zhang;Jingjie Lin;Xingji Liu;Yue Yu;Lu Liu;Wei Zhong;Yayi Chen;Rongsheng Chen;Hoi Sing Kwok;Yuan Liu","doi":"10.1109/LED.2025.3598823","DOIUrl":"https://doi.org/10.1109/LED.2025.3598823","url":null,"abstract":"Neuromorphic electronics, which integrate sensing, storage, and computing to boost efficiency and performance, offer a low-cost, energy-efficient alternative for temporal data processing with edge computing potential when applied to reservoir computing (RC). However, current neuromorphic RC systems struggle with diverse spatial information inputs due to device design limits. Here, we present the first artificial dendrite horizontally cascaded by Ga-Sn-O (GTO)-based synaptic transistors with efficient electron-ion coupled films as the gate dielectric. This design allows unlimited lateral gate expansion, source/drain and gate interchangeability, and sustains a microampere-level output current across a record centimeter-scale gate-channel distance. The artificial dendrite maintains stable weight modulation through <inline-formula> <tex-math>$10^{mathbf {{5}}}$ </tex-math></inline-formula> electrical cycles and <inline-formula> <tex-math>$10^{mathbf {{7}}}$ </tex-math></inline-formula> bending cycles, with performance restorable via dielectric film replacement. This work pioneers the demonstration of spatiotemporally correlated reservoir computing using artificial dendrites-based RC systems, achieving highly accurate recognition and introducing a new paradigm to the field.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 10","pages":"1881-1884"},"PeriodicalIF":4.5,"publicationDate":"2025-08-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145141643","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In this work, an AlGaN-based deep ultraviolet light-emitting diode (DUV LED) with ultra-thin quantum wells has been proposed to improve the −3dB bandwidth for the potential use in non-line-of-sight communication. Simulation results demonstrate that the ultra-thin quantum well structure effectively suppresses the quantum-confined Stark effect (QCSE), promotes uniform hole distribution and radiative recombination. Consequently, this results in shortened radiative recombination lifetime $(tau _{textit {ra}{d}})$ , which generates a high −3 dB modulation bandwidth of 194 MHz and maintains a signal-to-noise ratio (SNR) above 10 dB in the low-frequency regime for $350~mu $ m $times 350~mu $ m DUV LED. Moreover, the fabricated devices exhibit a low leakage current of less than 10 nA at the reverse bias of −5 V, indicating that leakage paths caused by mesa sidewall defects are significantly reduced.
在这项工作中，提出了一种基于algan的具有超薄量子阱的深紫外发光二极管（DUV LED），以提高- 3dB带宽，有望用于非视距通信。仿真结果表明，超薄量子阱结构有效抑制了量子受限斯塔克效应（QCSE），促进了空穴均匀分布和辐射复合。因此，这导致缩短辐射复合寿命$(tau _{textit {ra}{d}})$，从而产生194 MHz的高- 3 dB调制带宽，并在$350~mu $ m $times 350~mu $ m DUV LED的低频状态下保持10 dB以上的信噪比（SNR）。此外，在- 5 V的反向偏压下，器件的漏电流小于10 nA，这表明由台面侧壁缺陷引起的漏路明显减少。
{"title":"257-nm AlGaN-Based Deep Ultraviolet Light-Emitting Diodes With Thin Quantum Wells to Achieve Large −3 dB Bandwidth","authors":"Chunshuang Chu;Zhengwang Pei;Kangkai Tian;Fuping Huang;Yonghui Zhang;Pengfei Tian;Xiao Wei Sun;Zi-Hui Zhang","doi":"10.1109/LED.2025.3598775","DOIUrl":"https://doi.org/10.1109/LED.2025.3598775","url":null,"abstract":"In this work, an AlGaN-based deep ultraviolet light-emitting diode (DUV LED) with ultra-thin quantum wells has been proposed to improve the −3dB bandwidth for the potential use in non-line-of-sight communication. Simulation results demonstrate that the ultra-thin quantum well structure effectively suppresses the quantum-confined Stark effect (QCSE), promotes uniform hole distribution and radiative recombination. Consequently, this results in shortened radiative recombination lifetime <inline-formula> <tex-math>$(tau _{textit {ra}{d}})$ </tex-math></inline-formula>, which generates a high −3 dB modulation bandwidth of 194 MHz and maintains a signal-to-noise ratio (SNR) above 10 dB in the low-frequency regime for <inline-formula> <tex-math>$350~mu $ </tex-math></inline-formula>m <inline-formula> <tex-math>$times 350~mu $ </tex-math></inline-formula>m DUV LED. Moreover, the fabricated devices exhibit a low leakage current of less than 10 nA at the reverse bias of −5 V, indicating that leakage paths caused by mesa sidewall defects are significantly reduced.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 10","pages":"1741-1744"},"PeriodicalIF":4.5,"publicationDate":"2025-08-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145315390","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A novel high holding voltage Shunt-Triggered Silicon-controlled Rectifier (STSCR) has been developed using 0.18-$mu $ m Bipolar CMOS DMOS (BCD) technology to simultaneously improve holding voltage (${V}_{text {h}}text {)}$ and failure current (${I}_{text {t {2}}}text {)}$ for electrostatic discharge (ESD) protection. Unlike conventional ${V}_{text {h}}$ -optimized approaches, the STSCR enhances ${V}_{text {h}}$ through a newly-designed metal triggering bridge (MTB) structure, which redirects the current vector of the effective trigger current (${I}_{text {t {1}}}text {)}$ and modifies the initial holding current (${I}_{text {h}}text {)}$ distribution, resulting in a significantly ${V}_{text {h}}$ enhancement. Transmission line pulse (TLP) measurements demonstrate a remarkable performance improvement, elevating ${V}_{text {h}}$ from conventional 2.5 V to 5.3 V with an outstanding ${I}_{text {t {2}}}$ of 2.77 A at $50~mu $ m finger width. Furthermore, the Transient-induced Latch-Up (TLU) tests with varying pulse widths confirm the STSCR’s latch-up (LU) immunity across different ambient temperatures.
{"title":"Novel High-Holding-Voltage Shunt-Triggered SCR for Robust ESD Protection","authors":"Zhao Qi;Junke Li;Hongquan Chen;Xuan Li;Xin Zhou;Ming Qiao;Wenqi Wu;Xin Zhang;Sen Zhang;Nailong He;Zhili Zhang;Zhaoji Li;Bo Zhang","doi":"10.1109/LED.2025.3598828","DOIUrl":"https://doi.org/10.1109/LED.2025.3598828","url":null,"abstract":"A novel high holding voltage Shunt-Triggered Silicon-controlled Rectifier (STSCR) has been developed using 0.18-<inline-formula> <tex-math>$mu $ </tex-math></inline-formula>m Bipolar CMOS DMOS (BCD) technology to simultaneously improve holding voltage (<inline-formula> <tex-math>${V}_{text {h}}text {)}$ </tex-math></inline-formula> and failure current (<inline-formula> <tex-math>${I}_{text {t {2}}}text {)}$ </tex-math></inline-formula> for electrostatic discharge (ESD) protection. Unlike conventional <inline-formula> <tex-math>${V}_{text {h}}$ </tex-math></inline-formula>-optimized approaches, the STSCR enhances <inline-formula> <tex-math>${V}_{text {h}}$ </tex-math></inline-formula> through a newly-designed metal triggering bridge (MTB) structure, which redirects the current vector of the effective trigger current (<inline-formula> <tex-math>${I}_{text {t {1}}}text {)}$ </tex-math></inline-formula> and modifies the initial holding current (<inline-formula> <tex-math>${I}_{text {h}}text {)}$ </tex-math></inline-formula> distribution, resulting in a significantly <inline-formula> <tex-math>${V}_{text {h}}$ </tex-math></inline-formula> enhancement. Transmission line pulse (TLP) measurements demonstrate a remarkable performance improvement, elevating <inline-formula> <tex-math>${V}_{text {h}}$ </tex-math></inline-formula> from conventional 2.5 V to 5.3 V with an outstanding <inline-formula> <tex-math>${I}_{text {t {2}}}$ </tex-math></inline-formula> of 2.77 A at <inline-formula> <tex-math>$50~mu $ </tex-math></inline-formula>m finger width. Furthermore, the Transient-induced Latch-Up (TLU) tests with varying pulse widths confirm the STSCR’s latch-up (LU) immunity across different ambient temperatures.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 10","pages":"1673-1676"},"PeriodicalIF":4.5,"publicationDate":"2025-08-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145315447","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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