Pub Date : 2024-08-09DOI: 10.1109/led.2024.3440910
Seung-Mo Kim, Min Gyu Kwon, Minjae Kim, Chan Bin Lee, Ki Sung Kim, Hyeon Jun Hwang, Joon Kim, Byoung Hun Lee
{"title":"Extremely Thin Proximity Platinum Silicide Formation Process using Continuous-Wave Laser Scanning Anneal","authors":"Seung-Mo Kim, Min Gyu Kwon, Minjae Kim, Chan Bin Lee, Ki Sung Kim, Hyeon Jun Hwang, Joon Kim, Byoung Hun Lee","doi":"10.1109/led.2024.3440910","DOIUrl":"https://doi.org/10.1109/led.2024.3440910","url":null,"abstract":"","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":null,"pages":null},"PeriodicalIF":4.9,"publicationDate":"2024-08-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141940291","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-08-09DOI: 10.1109/led.2024.3441235
Jun Ye, Weiye Mo, Xuan Xiao, Haonan Liu, Yang Song, Wei Huang, Debin Zhang, Liang Li, Hongping Ma, Qingchun Jon Zhang, D. W. Zhang
{"title":"Wider SOA SGT MOSFET with Self-Adjusting Negative Feedback by Patterning the Varied Resistance of Source","authors":"Jun Ye, Weiye Mo, Xuan Xiao, Haonan Liu, Yang Song, Wei Huang, Debin Zhang, Liang Li, Hongping Ma, Qingchun Jon Zhang, D. W. Zhang","doi":"10.1109/led.2024.3441235","DOIUrl":"https://doi.org/10.1109/led.2024.3441235","url":null,"abstract":"","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":null,"pages":null},"PeriodicalIF":4.9,"publicationDate":"2024-08-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141940564","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-08-08DOI: 10.1109/led.2024.3440484
Yongwoo Lee, Haksoon Jung, Youngmin Jo, Sanghoon Baek, Hyunjin Park, Seong Jun Park, Sungjune Jung, Yong-Young Noh, Jimin Kwon
{"title":"Dual-Gate Carbon Nanotube Thin-Film Transistors with Printed Channel and Passivation Interlayer on Plastic Foil","authors":"Yongwoo Lee, Haksoon Jung, Youngmin Jo, Sanghoon Baek, Hyunjin Park, Seong Jun Park, Sungjune Jung, Yong-Young Noh, Jimin Kwon","doi":"10.1109/led.2024.3440484","DOIUrl":"https://doi.org/10.1109/led.2024.3440484","url":null,"abstract":"","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":null,"pages":null},"PeriodicalIF":4.9,"publicationDate":"2024-08-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141940562","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Diamond is a promising material for p-channel power field-effect transistors (FETs) due to its remarkable physical properties. However, no diamond FETs with current characteristics exceeding 1 A have so far been reported. P-channel FETs capable of high-current operation are essential in order to realize complementary inverters with n-channel wide bandgap devices such as SiC or GaN. In this work, we designed and fabricated vertical-type diamond metal-oxide-semiconductor FETs (MOSFETs) with a trench structure, and a gate width ( ${W} _{text {G}}text {)}$ of 0.1 to 10 mm. For devices with ${W} _{text {G}} =10$ mm and a source-drain voltage ( ${V} _{text {DS}}text {)}$ of –20 V, the drain current reached 0.7 A. We obtained a maximum drain current of over 1.5 A with ${V} _{text {DS}} =$ –20 V by connecting two devices in parallel within a chip. The drain current density and specific on-resistance at a ${V} _{text {DS}}$ of –10 V were 85 mA/mm and $118~Omega cdot $ mm, respectively ( ${W} _{text {G}} =2$ mm). The leakage current in the off state is at the lower limit of the measurement ( $sim 10^{-{11}}$ A) and the on/off ratio is over nine orders of magnitude.
金刚石具有显著的物理特性，是一种很有前途的 p 沟道功率场效应晶体管（FET）材料。然而，迄今为止还没有报道过电流特性超过 1 A 的金刚石场效应晶体管。要实现与碳化硅或氮化镓等 n 沟道宽带隙器件的互补逆变器，必须要有能够大电流工作的 P 沟道场效应晶体管。在这项工作中，我们设计并制造了具有沟槽结构的垂直型金刚石金属氧化物半导体场效应晶体管（MOSFET），栅极宽度（${W} _text {G}text {）}$为 0.1 至 10 毫米。对于 ${W}${W} _{text {G}} =10$ mm、源极-漏极电压 ( ${V} _{text {DS}}text {)}$ 为 -20 V 时，漏极电流达到 0.7 A。_{text {DS}} =$ -20 V 时，我们获得了超过 1.5 A 的最大漏极电流。在 ${V} _{text {DS}} 时的漏极电流密度和比导通电阻为${V} _{text {DS}}$ 为 -10 V 时的漏极电流密度和比导通电阻分别为 85 mA/mm 和 $118~Omega cdot $ mm（${W} _{text {G}} =2$ mm）。关断状态下的泄漏电流处于测量值的下限（$sim 10^{-{11}}$ A），导通/关断比超过九个数量级。
{"title":"Over 1 A Operation of Vertical-Type Diamond MOSFETs","authors":"Nobutaka Oi;Satoshi Okubo;Ikuto Tsuyuzaki;Atsushi Hiraiwa;Hiroshi Kawarada","doi":"10.1109/LED.2024.3427423","DOIUrl":"10.1109/LED.2024.3427423","url":null,"abstract":"Diamond is a promising material for p-channel power field-effect transistors (FETs) due to its remarkable physical properties. However, no diamond FETs with current characteristics exceeding 1 A have so far been reported. P-channel FETs capable of high-current operation are essential in order to realize complementary inverters with n-channel wide bandgap devices such as SiC or GaN. In this work, we designed and fabricated vertical-type diamond metal-oxide-semiconductor FETs (MOSFETs) with a trench structure, and a gate width (\u0000<inline-formula> <tex-math>${W} _{text {G}}text {)}$ </tex-math></inline-formula>\u0000 of 0.1 to 10 mm. For devices with \u0000<inline-formula> <tex-math>${W} _{text {G}} =10$ </tex-math></inline-formula>\u0000 mm and a source-drain voltage (\u0000<inline-formula> <tex-math>${V} _{text {DS}}text {)}$ </tex-math></inline-formula>\u0000 of –20 V, the drain current reached 0.7 A. We obtained a maximum drain current of over 1.5 A with \u0000<inline-formula> <tex-math>${V} _{text {DS}} =$ </tex-math></inline-formula>\u0000 –20 V by connecting two devices in parallel within a chip. The drain current density and specific on-resistance at a \u0000<inline-formula> <tex-math>${V} _{text {DS}}$ </tex-math></inline-formula>\u0000 of –10 V were 85 mA/mm and \u0000<inline-formula> <tex-math>$118~Omega cdot $ </tex-math></inline-formula>\u0000mm, respectively (\u0000<inline-formula> <tex-math>${W} _{text {G}} =2$ </tex-math></inline-formula>\u0000 mm). The leakage current in the off state is at the lower limit of the measurement (\u0000<inline-formula> <tex-math>$sim 10^{-{11}}$ </tex-math></inline-formula>\u0000A) and the on/off ratio is over nine orders of magnitude.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":null,"pages":null},"PeriodicalIF":4.1,"publicationDate":"2024-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10630699","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141940566","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-08-07DOI: 10.1109/led.2024.3440177
Elia Palmese, Haotian Xue, Daniel J. Rogers, Jonathan J. Wierer
{"title":"Light-Triggered, Enhancement-Mode AlInN/GaN HEMTs with Sub-microsecond Switching Times","authors":"Elia Palmese, Haotian Xue, Daniel J. Rogers, Jonathan J. Wierer","doi":"10.1109/led.2024.3440177","DOIUrl":"https://doi.org/10.1109/led.2024.3440177","url":null,"abstract":"","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":null,"pages":null},"PeriodicalIF":4.9,"publicationDate":"2024-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141940565","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-08-07DOI: 10.1109/led.2024.3439548
Rui Xin, Ning Li, Hui Xia, Xinyang Jiang, Li Yu, Weiwei Liu, Tianxin Li
{"title":"Probing electron density in quantum wells and its impact on the performance of infrared photodetectors","authors":"Rui Xin, Ning Li, Hui Xia, Xinyang Jiang, Li Yu, Weiwei Liu, Tianxin Li","doi":"10.1109/led.2024.3439548","DOIUrl":"https://doi.org/10.1109/led.2024.3439548","url":null,"abstract":"","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":null,"pages":null},"PeriodicalIF":4.9,"publicationDate":"2024-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141940567","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-08-06DOI: 10.1109/led.2024.3439256
Changyeon Kang, Sheung Hun Kim, Jun Hong Chu, Youngkeun Park, Gyusoup Lee, Seong Ho Kim, Byung Jin Cho
{"title":"Lanthanum Oxide Surface Treatment to Form Diffusion Barrier and Interface Dipoles on Ferroelectric FET","authors":"Changyeon Kang, Sheung Hun Kim, Jun Hong Chu, Youngkeun Park, Gyusoup Lee, Seong Ho Kim, Byung Jin Cho","doi":"10.1109/led.2024.3439256","DOIUrl":"https://doi.org/10.1109/led.2024.3439256","url":null,"abstract":"","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":null,"pages":null},"PeriodicalIF":4.9,"publicationDate":"2024-08-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141940570","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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