Pub Date : 2024-11-27DOI: 10.1109/LED.2024.3505494
{"title":"TechRxiv: Share Your Preprint Research with the World!","authors":"","doi":"10.1109/LED.2024.3505494","DOIUrl":"https://doi.org/10.1109/LED.2024.3505494","url":null,"abstract":"","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"45 12","pages":"2585-2585"},"PeriodicalIF":4.1,"publicationDate":"2024-11-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10770064","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142754263","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-11-27DOI: 10.1109/LED.2024.3496147
{"title":"IEEE Electron Device Letters Information for Authors","authors":"","doi":"10.1109/LED.2024.3496147","DOIUrl":"https://doi.org/10.1109/LED.2024.3496147","url":null,"abstract":"","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"45 12","pages":"2579-2579"},"PeriodicalIF":4.1,"publicationDate":"2024-11-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10770065","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142753788","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-11-27DOI: 10.1109/LED.2024.3490712
{"title":"Call for Nominations for Editor-in-Chief","authors":"","doi":"10.1109/LED.2024.3490712","DOIUrl":"https://doi.org/10.1109/LED.2024.3490712","url":null,"abstract":"","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"45 12","pages":"2584-2584"},"PeriodicalIF":4.1,"publicationDate":"2024-11-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10770070","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142754250","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-11-27DOI: 10.1109/LED.2024.3496149
{"title":"Bridging the Data Gap in Photovoltaics with Synthetic Data Generation","authors":"","doi":"10.1109/LED.2024.3496149","DOIUrl":"https://doi.org/10.1109/LED.2024.3496149","url":null,"abstract":"","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"45 12","pages":"2580-2581"},"PeriodicalIF":4.1,"publicationDate":"2024-11-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10770067","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142754278","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-11-27DOI: 10.1109/LED.2024.3498532
Sayeef Salahuddin
{"title":"Kudos to Our Golden Reviewers","authors":"Sayeef Salahuddin","doi":"10.1109/LED.2024.3498532","DOIUrl":"https://doi.org/10.1109/LED.2024.3498532","url":null,"abstract":"","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"45 12","pages":"2263-2263"},"PeriodicalIF":4.1,"publicationDate":"2024-11-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10770066","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142761563","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This letter presents the development of a W-band, 1-kW pulsed traveling wave tube (TWT) featuring a pencil beam focused by a periodic permanent magnet (PPM) system with the four-port structure, designed to reduce the inner diameter of the magnetic field system. By employing the four-port slow-wave structure, the inner radius of the PPM system was reduced by approximately 25%, leading to an increase in the axial magnetic field amplitude from 0.6T to 0.8T. This enhancement allows for a substantial increase in the beam current at the same operating voltage. The assembled W-band, 1-kW TWT was tested at a beam current of 410mA and a beam voltage of 21.65kV. Testing demonstrated that the TWT achieved over 1kW of output power with a 1.3GHz bandwidth, with a peak output power of 1,130W.
{"title":"Four-Port Folded Waveguide Slow Wave Structure for W-Band 1-kW Pulsed Traveling Wave Tube","authors":"Xiaoqing Zhang;Jun Cai;Xuankai Zhang;Yinghua Du;Chang Gao;Hanshuo Mu;Jinjun Feng","doi":"10.1109/LED.2024.3505606","DOIUrl":"https://doi.org/10.1109/LED.2024.3505606","url":null,"abstract":"This letter presents the development of a W-band, 1-kW pulsed traveling wave tube (TWT) featuring a pencil beam focused by a periodic permanent magnet (PPM) system with the four-port structure, designed to reduce the inner diameter of the magnetic field system. By employing the four-port slow-wave structure, the inner radius of the PPM system was reduced by approximately 25%, leading to an increase in the axial magnetic field amplitude from 0.6T to 0.8T. This enhancement allows for a substantial increase in the beam current at the same operating voltage. The assembled W-band, 1-kW TWT was tested at a beam current of 410mA and a beam voltage of 21.65kV. Testing demonstrated that the TWT achieved over 1kW of output power with a 1.3GHz bandwidth, with a peak output power of 1,130W.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 1","pages":"100-102"},"PeriodicalIF":4.1,"publicationDate":"2024-11-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142905930","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-11-25DOI: 10.1109/LED.2024.3505926
R. J. Jiang;P. Wang;J. X. Yao;X. X. Zhang;L. Cao;J. J. Li;G. Q. Sang;X. B. He;N. Zhou;Y. D. Zhang;C. C. Zhang;Z. H. Zhang;G. B. Bai;Y. H. Lu;L. L. Li;Q. K. Li;J. F. Gao;J. F. Li;Qingzhu Zhang;Huaxiang Yin;J. Luo;B. W. Dai
To overcome the challenges posed by the high parasitic resistance and poor driving performance induced by serious epitaxy defects in gate-all-around field-effect transistors (GAA FETs), a quasi-self-aligned landing pads (QSA LPs) technique is proposed, and defect-free connections among the multilayer stacked channels and single-crystal SiGe/Si superlattice source/drain (SD) structures are demonstrated in GAA FETs. When compared with devices with widely spaced LPs, reductions of 98.8% and 96.3% in the parasitic SD resistance ( ${R}_{textit {SD}}$ ) are observed for N/PFETs when using the QSA LPs technique, respectively. Therefore, the corresponding on-state current ( ${I}_{textit {on}}$ ) values are raised to $965~mu $ A/ $mu $ m and $669~mu $ A/ $mu $ m for 180 nm gate length N/PFETs, respectively. In addition, no significant changes are observed in the device subthreshold characteristics, including both the subthreshold swing and the on/off current ratios. The proposed scheme offers a new and promising approach to reduce the ${R}_{textit {SD}}$ values and enhance the performance of these advanced GAA devices.
{"title":"High-Performance GAA FETs With 100 Ω Parasitic Resistance and 965 μA/μm On-State Current Using Quasi-Self-Aligned Landing Pads","authors":"R. J. Jiang;P. Wang;J. X. Yao;X. X. Zhang;L. Cao;J. J. Li;G. Q. Sang;X. B. He;N. Zhou;Y. D. Zhang;C. C. Zhang;Z. H. Zhang;G. B. Bai;Y. H. Lu;L. L. Li;Q. K. Li;J. F. Gao;J. F. Li;Qingzhu Zhang;Huaxiang Yin;J. Luo;B. W. Dai","doi":"10.1109/LED.2024.3505926","DOIUrl":"https://doi.org/10.1109/LED.2024.3505926","url":null,"abstract":"To overcome the challenges posed by the high parasitic resistance and poor driving performance induced by serious epitaxy defects in gate-all-around field-effect transistors (GAA FETs), a quasi-self-aligned landing pads (QSA LPs) technique is proposed, and defect-free connections among the multilayer stacked channels and single-crystal SiGe/Si superlattice source/drain (SD) structures are demonstrated in GAA FETs. When compared with devices with widely spaced LPs, reductions of 98.8% and 96.3% in the parasitic SD resistance (\u0000<inline-formula> <tex-math>${R}_{textit {SD}}$ </tex-math></inline-formula>\u0000) are observed for N/PFETs when using the QSA LPs technique, respectively. Therefore, the corresponding on-state current (\u0000<inline-formula> <tex-math>${I}_{textit {on}}$ </tex-math></inline-formula>\u0000) values are raised to \u0000<inline-formula> <tex-math>$965~mu $ </tex-math></inline-formula>\u0000A/\u0000<inline-formula> <tex-math>$mu $ </tex-math></inline-formula>\u0000m and \u0000<inline-formula> <tex-math>$669~mu $ </tex-math></inline-formula>\u0000A/\u0000<inline-formula> <tex-math>$mu $ </tex-math></inline-formula>\u0000m for 180 nm gate length N/PFETs, respectively. In addition, no significant changes are observed in the device subthreshold characteristics, including both the subthreshold swing and the on/off current ratios. The proposed scheme offers a new and promising approach to reduce the \u0000<inline-formula> <tex-math>${R}_{textit {SD}}$ </tex-math></inline-formula>\u0000 values and enhance the performance of these advanced GAA devices.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 1","pages":"4-7"},"PeriodicalIF":4.1,"publicationDate":"2024-11-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142912449","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The inferior buried film crystallinity and interface recombination have severely limited the development of large-area perovskite modules. Buried interface engineering and energy alignment engineering are critical to achieving high efficiency and stable perovskite modules. Herein, we present a hole transport bilayer to improve the buried perovskite film contact and large-area perovskite film uniformity. The self-assembled monolayer (SAM) layer of Me-4PACz was introduced to modify the surface of PTAA, resulting in the improved buried film contact and better energy alignment. The hole transport bilayers exhibit hole-extraction capacity and high conductance. As a result, the blade-coated state-of-the-art cells realize an impressive efficiency of 23.52% and a high efficiency of 20.18% for inverted perovskite modules with an aperture area of 65 cm2. Moreover, the improved buried film and suppressed interface non-radiative recombination are beneficial to enhance the film and device stability. Our works provide an effective strategy to promote the manufacturing application of the large-area perovskite modules.
{"title":"Buried Interface Bilayer Engineering Toward High Efficiency and Stable Perovskite Modules","authors":"Long Zhou;Xinyuan Feng;Jiaojiao Zhang;Xinxin Li;Yuanbo Du;Dazheng Chen;Weidong Zhu;He Xi;Jincheng Zhang;Chunfu Zhang;Yue Hao","doi":"10.1109/LED.2024.3505233","DOIUrl":"https://doi.org/10.1109/LED.2024.3505233","url":null,"abstract":"The inferior buried film crystallinity and interface recombination have severely limited the development of large-area perovskite modules. Buried interface engineering and energy alignment engineering are critical to achieving high efficiency and stable perovskite modules. Herein, we present a hole transport bilayer to improve the buried perovskite film contact and large-area perovskite film uniformity. The self-assembled monolayer (SAM) layer of Me-4PACz was introduced to modify the surface of PTAA, resulting in the improved buried film contact and better energy alignment. The hole transport bilayers exhibit hole-extraction capacity and high conductance. As a result, the blade-coated state-of-the-art cells realize an impressive efficiency of 23.52% and a high efficiency of 20.18% for inverted perovskite modules with an aperture area of 65 cm2. Moreover, the improved buried film and suppressed interface non-radiative recombination are beneficial to enhance the film and device stability. Our works provide an effective strategy to promote the manufacturing application of the large-area perovskite modules.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 1","pages":"88-91"},"PeriodicalIF":4.1,"publicationDate":"2024-11-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142912448","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In this work, we fabricated a high-performance amorphous boron nitride vacuum ultraviolet (VUV) photodetector based on buried-electrode metal-semiconductor-metal structure for the first time. The device has a responsivity of 95.2 mA/W and an external quantum efficiency of up to 59.1% by improving carrier collection efficiency at 200 nm under a 20 V bias. At 300 K, the device exhibits a low dark current of 82 fA and a high specific detectivity of $8.3 times 10^{mathbf {{13}}}$ Jones. The response range between 163 nm and 215 nm covers the VUV spectrum and the VUV reject ratio against 254 nm and 450 nm is $4.2 times 10^{mathbf {{4}}}$ and $7.2 times 10^{mathbf {{7}}}$ , respectively. Even at 500 K, the device exhibits a dark current of only 1.2 pA and high responsivity, demonstrating excellent long-term stability and reliability. Furthermore, an ${8} times {8}$ -pixel array composed of the photodetectors achieved stable and rapid (< 1 ms) VUV imaging. These findings demonstrate the outstanding performance of the photodetector and the potential applications of combining buried electrode structures with other ultra-wide bandgap semiconductors.
{"title":"High-Sensitivity Amorphous Boron Nitride Vacuum Ultraviolet Photodetectors","authors":"Xiaohang Liu;Tianyu Wu;Jihong Zhao;Junjie Zhu;Xi Chen;Han Yu;Yanjun Gao;Ji Zhou;Zhanguo Chen","doi":"10.1109/LED.2024.3505235","DOIUrl":"https://doi.org/10.1109/LED.2024.3505235","url":null,"abstract":"In this work, we fabricated a high-performance amorphous boron nitride vacuum ultraviolet (VUV) photodetector based on buried-electrode metal-semiconductor-metal structure for the first time. The device has a responsivity of 95.2 mA/W and an external quantum efficiency of up to 59.1% by improving carrier collection efficiency at 200 nm under a 20 V bias. At 300 K, the device exhibits a low dark current of 82 fA and a high specific detectivity of \u0000<inline-formula> <tex-math>$8.3 times 10^{mathbf {{13}}}$ </tex-math></inline-formula>\u0000 Jones. The response range between 163 nm and 215 nm covers the VUV spectrum and the VUV reject ratio against 254 nm and 450 nm is \u0000<inline-formula> <tex-math>$4.2 times 10^{mathbf {{4}}}$ </tex-math></inline-formula>\u0000 and \u0000<inline-formula> <tex-math>$7.2 times 10^{mathbf {{7}}}$ </tex-math></inline-formula>\u0000, respectively. Even at 500 K, the device exhibits a dark current of only 1.2 pA and high responsivity, demonstrating excellent long-term stability and reliability. Furthermore, an \u0000<inline-formula> <tex-math>${8} times {8}$ </tex-math></inline-formula>\u0000-pixel array composed of the photodetectors achieved stable and rapid (< 1 ms) VUV imaging. These findings demonstrate the outstanding performance of the photodetector and the potential applications of combining buried electrode structures with other ultra-wide bandgap semiconductors.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 1","pages":"76-79"},"PeriodicalIF":4.1,"publicationDate":"2024-11-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142912581","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In practical microwave power transmission (MPT) applications, the oblique incident angle always influences the captured power of the moving receiver. To mitigate this issue, a near-zero index metasurface (ZIM) is designed and investigated, the results prove that it can correct the wave vector direction for a wide range of the incident angle, and guarantee all outgoing waves propagate at the same angle (perpendicular to the receiver). Therefore, the harvested power at the receiving terminal can be enhanced in the MPT system. A system-level result indicates that, after loading a designed ZIM in the MPT system, the reception efficiency (RE) increased from 51.6% (without ZIM) to 63.8% at a working frequency of 5.8 GHz. In addition, although the received power inevitably decreases when the incidence angle increases, the fabricated ZIM retains a higher RE of the system than that without it.
{"title":"Design and Measurement of a Zero-Index Metasurface for Microwave Power Transmission Applications","authors":"Huaiqing Zhang;Zhenteng Fan;Jingjing Yang;Jinpeng He;Hui Xiao","doi":"10.1109/LED.2024.3505203","DOIUrl":"https://doi.org/10.1109/LED.2024.3505203","url":null,"abstract":"In practical microwave power transmission (MPT) applications, the oblique incident angle always influences the captured power of the moving receiver. To mitigate this issue, a near-zero index metasurface (ZIM) is designed and investigated, the results prove that it can correct the wave vector direction for a wide range of the incident angle, and guarantee all outgoing waves propagate at the same angle (perpendicular to the receiver). Therefore, the harvested power at the receiving terminal can be enhanced in the MPT system. A system-level result indicates that, after loading a designed ZIM in the MPT system, the reception efficiency (RE) increased from 51.6% (without ZIM) to 63.8% at a working frequency of 5.8 GHz. In addition, although the received power inevitably decreases when the incidence angle increases, the fabricated ZIM retains a higher RE of the system than that without it.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 1","pages":"119-122"},"PeriodicalIF":4.1,"publicationDate":"2024-11-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142905859","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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