Pub Date : 2024-10-01DOI: 10.1109/LED.2024.3459570
{"title":"Bridging the Data Gap in Photovoltaics with Synthetic Data Generation","authors":"","doi":"10.1109/LED.2024.3459570","DOIUrl":"https://doi.org/10.1109/LED.2024.3459570","url":null,"abstract":"","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"45 10","pages":"2047-2048"},"PeriodicalIF":4.1,"publicationDate":"2024-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10701600","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142368504","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-10-01DOI: 10.1109/LED.2024.3459582
{"title":"Special Issue on Intelligent Sensor Systems for the IEEE Journal of Electron Devices","authors":"","doi":"10.1109/LED.2024.3459582","DOIUrl":"https://doi.org/10.1109/LED.2024.3459582","url":null,"abstract":"","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"45 10","pages":"2049-2050"},"PeriodicalIF":4.1,"publicationDate":"2024-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10701595","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142368568","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-10-01DOI: 10.1109/LED.2024.3459580
{"title":"IEEE Electron Device Letters Information for Authors","authors":"","doi":"10.1109/LED.2024.3459580","DOIUrl":"https://doi.org/10.1109/LED.2024.3459580","url":null,"abstract":"","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"45 10","pages":"2046-2046"},"PeriodicalIF":4.1,"publicationDate":"2024-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10701575","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142368309","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-10-01DOI: 10.1109/LED.2024.3459584
{"title":"IEEE Transactions on Electron Devices Table of Contents","authors":"","doi":"10.1109/LED.2024.3459584","DOIUrl":"https://doi.org/10.1109/LED.2024.3459584","url":null,"abstract":"","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"45 10","pages":"2051-C3"},"PeriodicalIF":4.1,"publicationDate":"2024-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10701599","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142368407","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
For the first time, robust ohmic contacts were successfully prepared on oxygen-terminated intrinsic diamond with insulating surface and rare carrier concentration by transition metals (TMs, including Pt, Ru, W, Cr, Zr and V) metallization. The record low specific contact resistance of ${2}.{5}times {10} ^{-{8}}~Omega $ cm2 was obtained for Pt contacts, which diffused into diamond in a metallic state and did not generate carbide but sp2 carbon and vacancy defects. We found that the shallow damage layer full of conductive defects like TMs, TM carbides, sp2 carbon and nitrogen-vacancy color centers induced by metallization within diamond is the critical reason for the formation of ohmic contacts, which acts as conductive shunts to connect the electrode contact and bulk diamond. Our findings extended the methodology and theory for the formation of reliable and efficient ohmic contacts on diamond.
{"title":"Record Low Contact Resistivity of 10-8 Ω cm² Ohmic Contacts on Oxygen-Terminated Intrinsic Diamond by Transition Metals Metallization","authors":"Sai-Fei Fan;Bo Liang;Xiao-Hui Zhang;Wen-Chao Zhang;Biao Wang;Tong-Bo Li;Tao Su;Ben-Jian Liu;Viktor Ralchenko;Kang Liu;Jia-Qi Zhu","doi":"10.1109/LED.2024.3458053","DOIUrl":"https://doi.org/10.1109/LED.2024.3458053","url":null,"abstract":"For the first time, robust ohmic contacts were successfully prepared on oxygen-terminated intrinsic diamond with insulating surface and rare carrier concentration by transition metals (TMs, including Pt, Ru, W, Cr, Zr and V) metallization. The record low specific contact resistance of \u0000<inline-formula> <tex-math>${2}.{5}times {10} ^{-{8}}~Omega $ </tex-math></inline-formula>\u0000 cm2 was obtained for Pt contacts, which diffused into diamond in a metallic state and did not generate carbide but sp2 carbon and vacancy defects. We found that the shallow damage layer full of conductive defects like TMs, TM carbides, sp2 carbon and nitrogen-vacancy color centers induced by metallization within diamond is the critical reason for the formation of ohmic contacts, which acts as conductive shunts to connect the electrode contact and bulk diamond. Our findings extended the methodology and theory for the formation of reliable and efficient ohmic contacts on diamond.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"45 11","pages":"2062-2065"},"PeriodicalIF":4.1,"publicationDate":"2024-09-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142517879","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Perovskite are expected to construct vision neuromorphic systems due to its unique photoelectric properties. However, the ion migration in perovskite films, as well as the toxicity of lead element limit their applications. Here we demonstrated a lead-free perovskite-graphene hybrid (PGH) integrated device via low temperature method. This hybrid structure decouples vertical carrier extraction under built-in electric field and horizontal carrier transport under applied high electric filed, which enhances carrier transport efficiency while alleviating ion migration issues. As a result, a responsivity of 199 A/W and a detectivity of ${0}.{53}times {10} ^{{10}}$ Jones were achieved under 405 nm light illumination (power intensity: ${0}.{24}times {10} ^{text {- {2}}}$ nW/ $mu $ m $^{{2}}text {)}$ . Furthermore, the ground-state current drift caused by charge trapping/detrapping in PGH band alignment facilitates in-situ preprocessing of visual information. A neuromorphic vision system with a ${6}times {6}$ sensor array was constructed, and it showed a significantly accuracy enhancement (69.2% to 89.5%) in recognition tasks. This work contributes to the development of high-performance perovskite-based neuromorphic devices.
{"title":"Hybrid Integrated Lead-Free Perovskite/Graphene Array Toward High-Responsivity In-Sensor Computing","authors":"Jiahe Zhang;Guan-Hua Dun;Ken Qin;Ruolong Zhou;Zeshu Wang;Jiali Peng;Xiangshun Geng;Dan Xie;He Tian;Yi Yang;Tian-Ling Ren","doi":"10.1109/LED.2024.3465790","DOIUrl":"https://doi.org/10.1109/LED.2024.3465790","url":null,"abstract":"Perovskite are expected to construct vision neuromorphic systems due to its unique photoelectric properties. However, the ion migration in perovskite films, as well as the toxicity of lead element limit their applications. Here we demonstrated a lead-free perovskite-graphene hybrid (PGH) integrated device via low temperature method. This hybrid structure decouples vertical carrier extraction under built-in electric field and horizontal carrier transport under applied high electric filed, which enhances carrier transport efficiency while alleviating ion migration issues. As a result, a responsivity of 199 A/W and a detectivity of \u0000<inline-formula> <tex-math>${0}.{53}times {10} ^{{10}}$ </tex-math></inline-formula>\u0000 Jones were achieved under 405 nm light illumination (power intensity: \u0000<inline-formula> <tex-math>${0}.{24}times {10} ^{text {- {2}}}$ </tex-math></inline-formula>\u0000 nW/\u0000<inline-formula> <tex-math>$mu $ </tex-math></inline-formula>\u0000m\u0000<inline-formula> <tex-math>$^{{2}}text {)}$ </tex-math></inline-formula>\u0000. Furthermore, the ground-state current drift caused by charge trapping/detrapping in PGH band alignment facilitates in-situ preprocessing of visual information. A neuromorphic vision system with a \u0000<inline-formula> <tex-math>${6}times {6}$ </tex-math></inline-formula>\u0000 sensor array was constructed, and it showed a significantly accuracy enhancement (69.2% to 89.5%) in recognition tasks. This work contributes to the development of high-performance perovskite-based neuromorphic devices.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"45 11","pages":"2150-2153"},"PeriodicalIF":4.1,"publicationDate":"2024-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142524169","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
How to simultaneously achieve a high effective electromechanical coupling coefficient and a high Q value for solidly mounted resonator (SMR) has become a key technical problem in filter applications. In this study, a new process flow for SMR devices using a wafer bonding technology is proposed. Based on this method, high-quality Al0.8 Sc0.2 N piezoelectric film grown on the metal-organic chemical vapor deposition (MOCVD) AlN buffer layer was successfully applied to fabricate SMR. A 4.5 GHz SMR resonator was demonstrated with an effective electromechanical coupling coefficient $({k}_{textit {eff}}^{{2}})$ of 12.27%, a Qp of 1009, and the figure of merit (FOM) up to 123. The better performance originated from the high-quality piezoelectric films enable SMR to be more widely used in various radio-frequency fields.
{"title":"High Figure of Merit 4.5 GHz Solidly Mounted Resonator Fabricated Using High-Quality Al₀.₈Sc₀.₂N Films","authors":"Zekai Wang;Yao Cai;Tingting Yang;Binghui Lin;Yaxin Wang;Yuqi Ren;Yupeng Zheng;Shizhao Wang;Yan Liu;Chengliang Sun","doi":"10.1109/LED.2024.3465567","DOIUrl":"https://doi.org/10.1109/LED.2024.3465567","url":null,"abstract":"How to simultaneously achieve a high effective electromechanical coupling coefficient and a high Q value for solidly mounted resonator (SMR) has become a key technical problem in filter applications. In this study, a new process flow for SMR devices using a wafer bonding technology is proposed. Based on this method, high-quality Al0.8 Sc0.2 N piezoelectric film grown on the metal-organic chemical vapor deposition (MOCVD) AlN buffer layer was successfully applied to fabricate SMR. A 4.5 GHz SMR resonator was demonstrated with an effective electromechanical coupling coefficient \u0000<inline-formula> <tex-math>$({k}_{textit {eff}}^{{2}})$ </tex-math></inline-formula>\u0000 of 12.27%, a Qp of 1009, and the figure of merit (FOM) up to 123. The better performance originated from the high-quality piezoelectric films enable SMR to be more widely used in various radio-frequency fields.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"45 11","pages":"2229-2232"},"PeriodicalIF":4.1,"publicationDate":"2024-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142524153","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-23DOI: 10.1109/LED.2024.3464647
Tian Tian;Jinshu Zhang;Kai Xiao;Yingxin Chen;Yuxuan Zhu;Peng Zhou;Wenzhong Bao;Junhao Chu;Jing Wan
Although graphene field-effect transistors (GFET) exhibit high carrier mobility and transconductance, they suffer from low output resistance, resulting in limited voltage and power gain. In this study, a heterogenous process is developed to integrate single-layer graphene with silicon-on-insulator (SOI) substrate, then achieving a groundbreaking high-gain cascode amplifier. By combining the advantages of high transconductance from GFET and high output resistance from SOI-FET, the heterogenous cascode amplifier shows high output resistance and high voltage gain. Moreover, the heterogenous cascode amplifier demonstrates a significant improvement in transconductance (12.6 times of SOI-FET) and output resistance (98.7 times of GFET). A maximum gain of up to 80 is obtained by optimizing the bias conditions, vastly exceeding that of standalone GFET and SOI-FET devices. This graphene/SOI heterogenous cascode amplifier exhibits promising applications in radio-frequency transistor technology and wireless communication.
{"title":"Graphene/Silicon-on-Insulator Heterogenous Cascode Amplifier With High Gain","authors":"Tian Tian;Jinshu Zhang;Kai Xiao;Yingxin Chen;Yuxuan Zhu;Peng Zhou;Wenzhong Bao;Junhao Chu;Jing Wan","doi":"10.1109/LED.2024.3464647","DOIUrl":"https://doi.org/10.1109/LED.2024.3464647","url":null,"abstract":"Although graphene field-effect transistors (GFET) exhibit high carrier mobility and transconductance, they suffer from low output resistance, resulting in limited voltage and power gain. In this study, a heterogenous process is developed to integrate single-layer graphene with silicon-on-insulator (SOI) substrate, then achieving a groundbreaking high-gain cascode amplifier. By combining the advantages of high transconductance from GFET and high output resistance from SOI-FET, the heterogenous cascode amplifier shows high output resistance and high voltage gain. Moreover, the heterogenous cascode amplifier demonstrates a significant improvement in transconductance (12.6 times of SOI-FET) and output resistance (98.7 times of GFET). A maximum gain of up to 80 is obtained by optimizing the bias conditions, vastly exceeding that of standalone GFET and SOI-FET devices. This graphene/SOI heterogenous cascode amplifier exhibits promising applications in radio-frequency transistor technology and wireless communication.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"45 11","pages":"2209-2212"},"PeriodicalIF":4.1,"publicationDate":"2024-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142524136","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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