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Enhanced Mobility in C8-BTBT Field-effect Transistors with Iodine-doping 碘掺杂增强 C8-BTBT 场效应晶体管的迁移率
IF 4.9 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
IEEE Electron Device Letters
Pub Date : 2024-09-09 DOI: 10.1109/led.2024.3449560
Liangjun Wang, Caifang Gao, Siyuan Ruan, Jialin Yang, Shanshan Liang, Chang Yang, Wenwu Li
{"title":"Enhanced Mobility in C8-BTBT Field-effect Transistors with Iodine-doping","authors":"Liangjun Wang, Caifang Gao, Siyuan Ruan, Jialin Yang, Shanshan Liang, Chang Yang, Wenwu Li","doi":"10.1109/led.2024.3449560","DOIUrl":"https://doi.org/10.1109/led.2024.3449560","url":null,"abstract":"","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":null,"pages":null},"PeriodicalIF":4.9,"publicationDate":"2024-09-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142222900","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
4H-SiC Lateral Magnetotransistor with Sub-Microtesla In-Plane Magnetic Field Detectivity 具有亚微特斯拉平面内磁场探测能力的 4H-SiC 侧面磁晶体管
IF 4.9 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
IEEE Electron Device Letters
Pub Date : 2024-09-09 DOI: 10.1109/led.2024.3456752
Hesham Okeil, Gerhard Wachutka
{"title":"4H-SiC Lateral Magnetotransistor with Sub-Microtesla In-Plane Magnetic Field Detectivity","authors":"Hesham Okeil, Gerhard Wachutka","doi":"10.1109/led.2024.3456752","DOIUrl":"https://doi.org/10.1109/led.2024.3456752","url":null,"abstract":"","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":null,"pages":null},"PeriodicalIF":4.9,"publicationDate":"2024-09-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142222893","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Self-Rectifying Resistive Switching Characteristics in CsMAFAPbIBr Perovskite-Based Memristor Device 基于 CsMAFAPbIBr 包晶石的自整流电阻开关特性
IF 4.9 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
IEEE Electron Device Letters
Pub Date : 2024-09-06 DOI: 10.1109/led.2024.3455372
Jia Cheng Li, Ying Chen Li, Zi Chun Liu, Yuan Xiao Ma, Ye Liang Wang
{"title":"Self-Rectifying Resistive Switching Characteristics in CsMAFAPbIBr Perovskite-Based Memristor Device","authors":"Jia Cheng Li, Ying Chen Li, Zi Chun Liu, Yuan Xiao Ma, Ye Liang Wang","doi":"10.1109/led.2024.3455372","DOIUrl":"https://doi.org/10.1109/led.2024.3455372","url":null,"abstract":"","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":null,"pages":null},"PeriodicalIF":4.9,"publicationDate":"2024-09-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142222890","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Oxidizer Engineering of ALD for Efficient Production of ZrO2 Capacitors in DRAM 利用 ALD 氧化炉工程高效生产 DRAM 中的氧化锆电容器
IF 4.9 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
IEEE Electron Device Letters
Pub Date : 2024-09-06 DOI: 10.1109/led.2024.3455338
Xinyi Tang, Yuanbiao Li, Songming Miao, Xiao Chen, Guangwei Xu, Di Lu, Shibing Long
{"title":"Oxidizer Engineering of ALD for Efficient Production of ZrO2 Capacitors in DRAM","authors":"Xinyi Tang, Yuanbiao Li, Songming Miao, Xiao Chen, Guangwei Xu, Di Lu, Shibing Long","doi":"10.1109/led.2024.3455338","DOIUrl":"https://doi.org/10.1109/led.2024.3455338","url":null,"abstract":"","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":null,"pages":null},"PeriodicalIF":4.9,"publicationDate":"2024-09-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142222891","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High-Order Mode Suppression in Traveling Wave Tube Based on Conformally Loaded Metasurface Filter 基于共形加载元面滤波器的行波管高阶模式抑制技术
IF 4.9 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
IEEE Electron Device Letters
Pub Date : 2024-09-06 DOI: 10.1109/led.2024.3455336
Gaoli Xiang, Zhigang Lu, Peng Gao, Jingrui Duan, Yuan Zheng, Zhanliang Wang, Shaomeng Wang, Huarong Gong, Yubin Gong
{"title":"High-Order Mode Suppression in Traveling Wave Tube Based on Conformally Loaded Metasurface Filter","authors":"Gaoli Xiang, Zhigang Lu, Peng Gao, Jingrui Duan, Yuan Zheng, Zhanliang Wang, Shaomeng Wang, Huarong Gong, Yubin Gong","doi":"10.1109/led.2024.3455336","DOIUrl":"https://doi.org/10.1109/led.2024.3455336","url":null,"abstract":"","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":null,"pages":null},"PeriodicalIF":4.9,"publicationDate":"2024-09-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142222899","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Multi-Domain Dynamics and Ultimate Scalability of CMOS-Compatible FeFETs CMOS 兼容型 FeFET 的多域动力学和终极可扩展性
IF 4.9 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
IEEE Electron Device Letters
Pub Date : 2024-09-05 DOI: 10.1109/led.2024.3454638
Nilesh Pandey, Yogesh Singh Chauhan, Leonard F. Register, Sanjay K. Banerjee
{"title":"Multi-Domain Dynamics and Ultimate Scalability of CMOS-Compatible FeFETs","authors":"Nilesh Pandey, Yogesh Singh Chauhan, Leonard F. Register, Sanjay K. Banerjee","doi":"10.1109/led.2024.3454638","DOIUrl":"https://doi.org/10.1109/led.2024.3454638","url":null,"abstract":"","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":null,"pages":null},"PeriodicalIF":4.9,"publicationDate":"2024-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142222892","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
γ-ray -induced Effects in Al:HfO2-based Memristor Devices for Memory and Sensor Applications 用于存储器和传感器应用的基于 Al:HfO2 的晶闸管器件中的γ射线诱导效应
IF 4.9 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
IEEE Electron Device Letters
Pub Date : 2024-09-04 DOI: 10.1109/led.2024.3454294
Om Kumar Prasad, Sridhar Chandrasekaran, Mari Napari, Irwan Purnama, Asep Nugroho, Dimitra G. Georgiadou, Chin-Han Chung, Kow-Ming Chang, Firman M. Simanjuntak
{"title":"γ-ray -induced Effects in Al:HfO2-based Memristor Devices for Memory and Sensor Applications","authors":"Om Kumar Prasad, Sridhar Chandrasekaran, Mari Napari, Irwan Purnama, Asep Nugroho, Dimitra G. Georgiadou, Chin-Han Chung, Kow-Ming Chang, Firman M. Simanjuntak","doi":"10.1109/led.2024.3454294","DOIUrl":"https://doi.org/10.1109/led.2024.3454294","url":null,"abstract":"","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":null,"pages":null},"PeriodicalIF":4.9,"publicationDate":"2024-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142222896","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Achieving High Yield of Perpendicular SOT-MTJ Manufactured on 300 mm Wafers 实现在 300 毫米晶圆上制造垂直 SOT-MTJ 的高产量
IF 4.9 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
IEEE Electron Device Letters
Pub Date : 2024-09-04 DOI: 10.1109/led.2024.3454609
Wenlong Yang, Zhenghui Ji, Yang Gao, Kaiyuan Zhou, Qijun Guo, Dinggui Zeng, Shasha Wang, Ming Wang, Lijie Shen, Guilin Chen, Yihui Sun, Enlong Liu, Shikun He
{"title":"Achieving High Yield of Perpendicular SOT-MTJ Manufactured on 300 mm Wafers","authors":"Wenlong Yang, Zhenghui Ji, Yang Gao, Kaiyuan Zhou, Qijun Guo, Dinggui Zeng, Shasha Wang, Ming Wang, Lijie Shen, Guilin Chen, Yihui Sun, Enlong Liu, Shikun He","doi":"10.1109/led.2024.3454609","DOIUrl":"https://doi.org/10.1109/led.2024.3454609","url":null,"abstract":"","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":null,"pages":null},"PeriodicalIF":4.9,"publicationDate":"2024-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142222894","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Synergistic Carbonyl and Cyano Passivation for Efficient Blade-Coated Perovskite Solar Cells 羰基和氰基协同钝化，实现高效叶片涂层包覆型太阳电池
IF 4.9 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
IEEE Electron Device Letters
Pub Date : 2024-09-04 DOI: 10.1109/led.2024.3454522
Xinxin Li, Long Zhou, Qianyu Chen, Yunlong Zhang, Xinyuan Feng, Yuanbo Du, Dazheng Chen, Weidong Zhu, He Xi, Jincheng Zhang, Chunfu Zhang, Yue Hao
{"title":"Synergistic Carbonyl and Cyano Passivation for Efficient Blade-Coated Perovskite Solar Cells","authors":"Xinxin Li, Long Zhou, Qianyu Chen, Yunlong Zhang, Xinyuan Feng, Yuanbo Du, Dazheng Chen, Weidong Zhu, He Xi, Jincheng Zhang, Chunfu Zhang, Yue Hao","doi":"10.1109/led.2024.3454522","DOIUrl":"https://doi.org/10.1109/led.2024.3454522","url":null,"abstract":"","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":null,"pages":null},"PeriodicalIF":4.9,"publicationDate":"2024-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142222898","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Novel Dual-Sheet-Beam Backward Wave Oscillator Based on Sub-Terahertz Band V-shaped Orthogonal Grating Waveguide 基于亚太赫兹波段 V 形正交光栅波导的新型双板束后向波振荡器
IF 4.9 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
IEEE Electron Device Letters
Pub Date : 2024-09-04 DOI: 10.1109/led.2024.3454508
Xinlun Xie, Guoxiang Shu, Jiacai Liao, Huaxing Pan, Shaochen Ma, Jiawei Tang, Siyuan Liu, Mingze Li, Wenlong He
{"title":"A Novel Dual-Sheet-Beam Backward Wave Oscillator Based on Sub-Terahertz Band V-shaped Orthogonal Grating Waveguide","authors":"Xinlun Xie, Guoxiang Shu, Jiacai Liao, Huaxing Pan, Shaochen Ma, Jiawei Tang, Siyuan Liu, Mingze Li, Wenlong He","doi":"10.1109/led.2024.3454508","DOIUrl":"https://doi.org/10.1109/led.2024.3454508","url":null,"abstract":"","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":null,"pages":null},"PeriodicalIF":4.9,"publicationDate":"2024-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142222901","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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