Pub Date : 2024-07-29DOI: 10.1109/led.2024.3435501
Kai Liu, Chong Wang, Xuefeng Zheng, Xiaohua Ma, Kuo Zhang, Wentao Zhang, Junchun Bai, Ang Li, Yue Hao
{"title":"Ultra-low Gate Leakage Current and Enhanced Gate Reliability in p-GaN HEMT with AlN/GaN/AlN Double Barriers Cap Layer","authors":"Kai Liu, Chong Wang, Xuefeng Zheng, Xiaohua Ma, Kuo Zhang, Wentao Zhang, Junchun Bai, Ang Li, Yue Hao","doi":"10.1109/led.2024.3435501","DOIUrl":"https://doi.org/10.1109/led.2024.3435501","url":null,"abstract":"","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":null,"pages":null},"PeriodicalIF":4.9,"publicationDate":"2024-07-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141863575","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-29DOI: 10.1109/led.2024.3435380
Shai Bonen, Suyash Pati Tripathi, Julie McIntosh, Thomas Jager, Sorin P. Voinigescu
{"title":"Investigation of p- and n-Type Quantum Dot Arrays Manufactured in 22nm FDSOI CMOS at 2-4 K and 300 K","authors":"Shai Bonen, Suyash Pati Tripathi, Julie McIntosh, Thomas Jager, Sorin P. Voinigescu","doi":"10.1109/led.2024.3435380","DOIUrl":"https://doi.org/10.1109/led.2024.3435380","url":null,"abstract":"","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":null,"pages":null},"PeriodicalIF":4.9,"publicationDate":"2024-07-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141872630","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-29DOI: 10.1109/led.2024.3435540
Nethmi Jayasinghe, Maeesha Binte Hashem, Dinithi Jayasuriya, Leila Rahimifard, Min-A Kang, Vinod K. Sangwan, Mark C. Hersam, Amit Ranjan Trivedi
{"title":"Single-Step Extraction of Transformer Attention with Dual-Gated Memtransistor Crossbars","authors":"Nethmi Jayasinghe, Maeesha Binte Hashem, Dinithi Jayasuriya, Leila Rahimifard, Min-A Kang, Vinod K. Sangwan, Mark C. Hersam, Amit Ranjan Trivedi","doi":"10.1109/led.2024.3435540","DOIUrl":"https://doi.org/10.1109/led.2024.3435540","url":null,"abstract":"","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":null,"pages":null},"PeriodicalIF":4.9,"publicationDate":"2024-07-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141872634","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The state-of-the-art micro-LEDs based on group III-V chips face the challenges in size-effect and mass transfer. Recently, perovskite LEDs have rapidly developed, and their solution processability may show great advance in the miniaturization and integration with driving circuit. However, the majority of research on perovskite micro-LEDs (micro-PeLEDs) have been focused on visible light, leaving the study of near-infrared micro-PeLEDs in its infancy. Herein, we report a photolithography-compatible method for the first demonstration of near-infrared micro-PeLEDs. A peak external quantum efficiency of 5.9% is achieved with $50~mu $ m pixel size and the size-effect of micro-PeLEDs is further discussed. The hyperspectral PL imaging shows the photoluminescence (PL) properties of the pixelized perovskite are not greatly affected by pixel size, and the electroluminescence (EL) analysis reveals that the size-related EL reduction is mainly caused by the inefficient current injection, which is easily to be optimized. Therefore, our work reveals that the perovskite with dispersed grains have an outstanding potential in the field of miniaturization.
基于 III-V 族芯片的先进微型 LED 面临着尺寸效应和传质方面的挑战。最近，包晶体 LED 得到了快速发展，其溶液可加工性可能会在微型化和与驱动电路集成方面取得巨大进步。然而，有关包晶体微型 LED（micro-PeLED）的研究大多集中在可见光领域，对近红外微型 LED 的研究尚处于起步阶段。在此，我们报告了一种光刻兼容方法，首次展示了近红外微型 LED。在 50~mu $ m 像素尺寸下实现了 5.9% 的峰值外部量子效率，并进一步讨论了微型 PeLED 的尺寸效应。高光谱聚光成像显示，像素化包晶石的光致发光（PL）特性受像素尺寸的影响不大，而电致发光（EL）分析表明，与尺寸相关的EL降低主要是由低效电流注入造成的，这一点很容易优化。因此，我们的研究揭示了具有分散晶粒的过氧化物在微型化领域的巨大潜力。
{"title":"Efficient Perovskite-Based Near-Infrared Micro Light-Emitting Diode and Size-Effect Analysis","authors":"Wenjie Wei;Yikai Yun;Shaoqun Li;Zhuoying Jiang;Sijie Jiang;Jianfeng Du;Yuanyuan Tian;Hongqiang Luo;Jinchai Li;Kai Huang;Mengyu Chen;Cheng Li;Rong Zhang","doi":"10.1109/LED.2024.3434727","DOIUrl":"10.1109/LED.2024.3434727","url":null,"abstract":"The state-of-the-art micro-LEDs based on group III-V chips face the challenges in size-effect and mass transfer. Recently, perovskite LEDs have rapidly developed, and their solution processability may show great advance in the miniaturization and integration with driving circuit. However, the majority of research on perovskite micro-LEDs (micro-PeLEDs) have been focused on visible light, leaving the study of near-infrared micro-PeLEDs in its infancy. Herein, we report a photolithography-compatible method for the first demonstration of near-infrared micro-PeLEDs. A peak external quantum efficiency of 5.9% is achieved with \u0000<inline-formula> <tex-math>$50~mu $ </tex-math></inline-formula>\u0000m pixel size and the size-effect of micro-PeLEDs is further discussed. The hyperspectral PL imaging shows the photoluminescence (PL) properties of the pixelized perovskite are not greatly affected by pixel size, and the electroluminescence (EL) analysis reveals that the size-related EL reduction is mainly caused by the inefficient current injection, which is easily to be optimized. Therefore, our work reveals that the perovskite with dispersed grains have an outstanding potential in the field of miniaturization.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":null,"pages":null},"PeriodicalIF":4.1,"publicationDate":"2024-07-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141863571","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-29DOI: 10.1109/led.2024.3435345
David G. Refaldi, Gerardo Malavena, Luca Chiavarone, Alessandro S. Spinelli, Christian Monzio Compagnoni
{"title":"Evidence of Widely Distributed Time Constants in the Vertical Charge Loss of 3-D Charge-Trap NAND Flash Memories","authors":"David G. Refaldi, Gerardo Malavena, Luca Chiavarone, Alessandro S. Spinelli, Christian Monzio Compagnoni","doi":"10.1109/led.2024.3435345","DOIUrl":"https://doi.org/10.1109/led.2024.3435345","url":null,"abstract":"","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":null,"pages":null},"PeriodicalIF":4.9,"publicationDate":"2024-07-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141872633","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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