Pub Date : 2024-08-21DOI: 10.1109/LED.2024.3447127
G. G. Denisov;A. V. Palitsin;D. I. Sobolev;A. N. Kuftin;V. V. Parshin;M. V. Morozkin;A. V. Chirkov;M. Yu. Glyavin
A compression of the output radiation of a 20 kW, 170 GHz gyrotron has been experimentally demonstrated in a quasi-optical travelling wave resonator with a gallium arsenide switch activated by a 532 nm picoseconds laser. A compression ratio of 20 has been obtained when the energy of picosecond laser pulses reached 50 mJ. The power of compressed pulses has been estimated at the level of 0.4 MW. The duration of compressed pulses did not exceed 1.2 ns which was less than the resonator round-trip time.
{"title":"Compression of 20 kW 170 GHz Gyrotron Output Radiation by Quasi-Optical Resonator With Laser Activated GaAs Switch","authors":"G. G. Denisov;A. V. Palitsin;D. I. Sobolev;A. N. Kuftin;V. V. Parshin;M. V. Morozkin;A. V. Chirkov;M. Yu. Glyavin","doi":"10.1109/LED.2024.3447127","DOIUrl":"https://doi.org/10.1109/LED.2024.3447127","url":null,"abstract":"A compression of the output radiation of a 20 kW, 170 GHz gyrotron has been experimentally demonstrated in a quasi-optical travelling wave resonator with a gallium arsenide switch activated by a 532 nm picoseconds laser. A compression ratio of 20 has been obtained when the energy of picosecond laser pulses reached 50 mJ. The power of compressed pulses has been estimated at the level of 0.4 MW. The duration of compressed pulses did not exceed 1.2 ns which was less than the resonator round-trip time.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"45 10","pages":"2040-2043"},"PeriodicalIF":4.1,"publicationDate":"2024-08-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142368569","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In this letter, the advantages of an antiferroelectric (AFE) and ferroelectric (FE) bilayer stack made of Hf x Zr $_{{1}-{text {x}}}$ O 2 (HZO) with different compositions were reported. Compared to the monolayer ferroelectric control sample, Mo/FE/Mo, the Mo/FE/AFE/Mo, and Mo/AFE/FE/Mo stacks exhibited a significant decrease in the coercive field (E $_{text {c}}text {)}$ . A higher dielectric constant of AFE increased the voltage distribution across the FE layer in the bilayer HZO structure, leading to a decrease in E c . Furthermore, the capacitor with Mo/AFE/FE/Mo exhibited 28% higher polarization, P r (2P $_{text {r}} ,, = ,, 45.9~mu $ C/cm $^{{2}}text {)}$ , than the control sample, while this significant increase of P r was not observed in the capacitor with Mo/FE/AFE/Mo. Electrical measurements of the capacitors with FE and AFE having various thicknesses showed that the dielectric constants and phase composition depend on the deposition sequence. A higher orthogonal phase ratio was achieved in the Mo/AFE/FE/Mo stack compared to the Mo/FE/AFE/Mo stack, resulting in higher polarization. Furthermore, bilayer capacitors with Mo/AFE/FE/Mo showed more robust long time reliability, such as endurance and retention.
{"title":"Tailoring of Ferroelectric Coercive Field and Polarization With Ferroelectric and Antiferroelectric HfxZr1–xO2 Bilayer Structure","authors":"Geon Park;An H. Nguyen;Manh-Cuong Nguyen;Anh-Duy Nguyen;Hyunsoo Kim;Jaekyeong Kim;Kyungsoo Hwang;Hoyeon Shin;Siun Song;Rino Choi","doi":"10.1109/LED.2024.3435381","DOIUrl":"https://doi.org/10.1109/LED.2024.3435381","url":null,"abstract":"In this letter, the advantages of an antiferroelectric (AFE) and ferroelectric (FE) bilayer stack made of Hf\u0000<sub>x</sub>\u0000Zr\u0000<inline-formula> <tex-math>$_{{1}-{text {x}}}$ </tex-math></inline-formula>\u0000O\u0000<sub>2</sub>\u0000(HZO) with different compositions were reported. Compared to the monolayer ferroelectric control sample, Mo/FE/Mo, the Mo/FE/AFE/Mo, and Mo/AFE/FE/Mo stacks exhibited a significant decrease in the coercive field (E\u0000<inline-formula> <tex-math>$_{text {c}}text {)}$ </tex-math></inline-formula>\u0000. A higher dielectric constant of AFE increased the voltage distribution across the FE layer in the bilayer HZO structure, leading to a decrease in E\u0000<sub>c</sub>\u0000. Furthermore, the capacitor with Mo/AFE/FE/Mo exhibited 28% higher polarization, P\u0000<sub>r</sub>\u0000 (2P\u0000<inline-formula> <tex-math>$_{text {r}} ,, = ,, 45.9~mu $ </tex-math></inline-formula>\u0000C/cm\u0000<inline-formula> <tex-math>$^{{2}}text {)}$ </tex-math></inline-formula>\u0000, than the control sample, while this significant increase of P\u0000<sub>r</sub>\u0000 was not observed in the capacitor with Mo/FE/AFE/Mo. Electrical measurements of the capacitors with FE and AFE having various thicknesses showed that the dielectric constants and phase composition depend on the deposition sequence. A higher orthogonal phase ratio was achieved in the Mo/AFE/FE/Mo stack compared to the Mo/FE/AFE/Mo stack, resulting in higher polarization. Furthermore, bilayer capacitors with Mo/AFE/FE/Mo showed more robust long time reliability, such as endurance and retention.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"45 10","pages":"1997-2000"},"PeriodicalIF":4.1,"publicationDate":"2024-08-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142368456","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-08-20DOI: 10.1109/LED.2024.3446550
Tengfei Long;Han Miao;Sheng Wang;Rui Li;Chengxi Zhang;Lin Wang;Tao Hu;Chonghe Li;Xuyong Yang
Perovskite nanocrystals (PeNCs)-based light-emitting diodes (PeLEDs) are emerging as promising candidates for next-generation electroluminescent devices. However, their practical application is limited due to the poor stability of PeNCs. Here, we demonstrate an efficient and stable PeLED enabled by entropy-driven CsCd 0.1 Pb 0.8 Sr 0.1 Br 3 PeNCs as emitter. Based on density functional theory (DFT) calculations with the Compound Energy Formalism (CEF) model, the simultaneous incorporation of multiple elements increases the entropy (S) of PeNCs, thereby enhancing their stability and suppressing lattice defects. The optimized PeLED achieves a maximum external quantum efficiency (EQE) of 22.2%, dramatically surpassing that (14.1%) of the control CsPbBr 3 -based device. More importantly, the device operating lifetime reaches 10 h, 14-fold higher than that of the control LED.
{"title":"Efficient and Stable Light-Emitting Diodes Enabled by Entropy-Driven Alloyed Perovskite Nanocrystals","authors":"Tengfei Long;Han Miao;Sheng Wang;Rui Li;Chengxi Zhang;Lin Wang;Tao Hu;Chonghe Li;Xuyong Yang","doi":"10.1109/LED.2024.3446550","DOIUrl":"https://doi.org/10.1109/LED.2024.3446550","url":null,"abstract":"Perovskite nanocrystals (PeNCs)-based light-emitting diodes (PeLEDs) are emerging as promising candidates for next-generation electroluminescent devices. However, their practical application is limited due to the poor stability of PeNCs. Here, we demonstrate an efficient and stable PeLED enabled by entropy-driven CsCd\u0000<sub>0.1</sub>\u0000Pb\u0000<sub>0.8</sub>\u0000Sr\u0000<sub>0.1</sub>\u0000Br\u0000<sub>3</sub>\u0000 PeNCs as emitter. Based on density functional theory (DFT) calculations with the Compound Energy Formalism (CEF) model, the simultaneous incorporation of multiple elements increases the entropy (S) of PeNCs, thereby enhancing their stability and suppressing lattice defects. The optimized PeLED achieves a maximum external quantum efficiency (EQE) of 22.2%, dramatically surpassing that (14.1%) of the control CsPbBr\u0000<sub>3</sub>\u0000-based device. More importantly, the device operating lifetime reaches 10 h, 14-fold higher than that of the control LED.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"45 10","pages":"1867-1870"},"PeriodicalIF":4.1,"publicationDate":"2024-08-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142368538","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-08-20DOI: 10.1109/LED.2024.3443128
Aojie Quan;Chen Wang;Hemin Zhang;Michael Kraft
This study reports a resonant Near-Infrared (NIR) detector based on dual-mode, self-oscillating Thermal-Piezoresistive Coupled Resonators. The resented device alleviates the current trade-offs between resolution and response time in Microelectromechanical Systems (MEMS) thermal detectors. The thermal-piezoresistive coupled resonators operate simultaneously in the in-phase and out-of-phase modes and the frequency difference between two modes is selected as the output metric. The square-shaped coupling area of the coupled resonators acted as the NIR sensing region because of its low thermal resistance. Our design demonstrated a $700~mu {s}$ response time, achieving 700-fold improvement compared to the conventional single-frequency output methods. Further, the differential output method inherently compensates for temperature drift, significantly increasing the immunity of device to thermal crosstalk by a factor of 25. A noise equivalent power density resolution of 253 pW/ $sqrt {textit {Hz}}$ is achieved.
{"title":"Dual-Mode Thermal-Piezoresistive Coupled Resonators for Fast and Stable NIR Measurements With Differential Output","authors":"Aojie Quan;Chen Wang;Hemin Zhang;Michael Kraft","doi":"10.1109/LED.2024.3443128","DOIUrl":"https://doi.org/10.1109/LED.2024.3443128","url":null,"abstract":"This study reports a resonant Near-Infrared (NIR) detector based on dual-mode, self-oscillating Thermal-Piezoresistive Coupled Resonators. The resented device alleviates the current trade-offs between resolution and response time in Microelectromechanical Systems (MEMS) thermal detectors. The thermal-piezoresistive coupled resonators operate simultaneously in the in-phase and out-of-phase modes and the frequency difference between two modes is selected as the output metric. The square-shaped coupling area of the coupled resonators acted as the NIR sensing region because of its low thermal resistance. Our design demonstrated a \u0000<inline-formula> <tex-math>$700~mu {s}$ </tex-math></inline-formula>\u0000 response time, achieving 700-fold improvement compared to the conventional single-frequency output methods. Further, the differential output method inherently compensates for temperature drift, significantly increasing the immunity of device to thermal crosstalk by a factor of 25. A noise equivalent power density resolution of 253 pW/\u0000<inline-formula> <tex-math>$sqrt {textit {Hz}}$ </tex-math></inline-formula>\u0000 is achieved.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"45 10","pages":"1953-1956"},"PeriodicalIF":4.1,"publicationDate":"2024-08-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142368578","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
On-chip electron emission sources are indispensable for developing miniature and integrated vacuum electronic devices on a chip. Here, a new on-chip electron source based on thermionic electron emission from a suspended Y 2 O 3 /TiN filament is reported. These thermionic electron sources are fabricated in batches on silicon wafers by microfabrication technologies. Benefit from the low work function of Y 2 O 3 , our on-chip thermionic sources exhibit an emission current of up to 1 mA and an emission density of up to 19.3 A/cm 2 at temperature of just 1990 K, much lower than those of previously-reported on-chip thermionic sources of W and carbon nanomaterials filaments with similar emission performances.
片上电子发射源是开发微型集成片上真空电子器件所不可或缺的。本文报告了一种基于悬浮 Y2O3/TiN 灯丝热电子发射的新型片上电子源。这些热离子电子源是通过微加工技术在硅晶片上批量制造的。得益于 Y2O3 的低功函数，我们的片上热离子源在温度仅为 1990 K 时的发射电流高达 1 mA，发射密度高达 19.3 A/cm2，远低于之前报道的具有类似发射性能的 W 和碳纳米材料灯丝片上热离子源。
{"title":"Wafer-Scale Fabricated On-Chip Thermionic Electron Sources Based on a Suspended Y2O3/TiN Filament","authors":"Weidong Rao;Zhiwei Li;Dengzhu Guo;Yang Li;Taoyuan Zhu;Xianlong Wei","doi":"10.1109/LED.2024.3446637","DOIUrl":"https://doi.org/10.1109/LED.2024.3446637","url":null,"abstract":"On-chip electron emission sources are indispensable for developing miniature and integrated vacuum electronic devices on a chip. Here, a new on-chip electron source based on thermionic electron emission from a suspended Y\u0000<sub>2</sub>\u0000O\u0000<sub>3</sub>\u0000/TiN filament is reported. These thermionic electron sources are fabricated in batches on silicon wafers by microfabrication technologies. Benefit from the low work function of Y\u0000<sub>2</sub>\u0000O\u0000<sub>3</sub>\u0000, our on-chip thermionic sources exhibit an emission current of up to 1 mA and an emission density of up to 19.3 A/cm\u0000<sup>2</sup>\u0000 at temperature of just 1990 K, much lower than those of previously-reported on-chip thermionic sources of W and carbon nanomaterials filaments with similar emission performances.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"45 10","pages":"1977-1980"},"PeriodicalIF":4.1,"publicationDate":"2024-08-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142368221","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-08-19DOI: 10.1109/LED.2024.3445970
Min-Kyu Park;Joon Hwang;Jong-Ho Bae;Jae-Joon Kim;Jong-Ho Lee
A CMOS-compatible Thin Film Transistor (TFT)-type Center Path neuron device with homeostasis characteristics is proposed. By modifying the charge injection path of the gate insulator stack, the proposed neuron device operates with lateral migration, which was conventionally perceived as a disadvantage in the memory industry. Various measured electrical characteristics of the Center Path device show that directly injected charges from the channel poly-Si to the charge trap Si 3 N 4 with low operational voltage laterally migrate to the Si 3 N 4 layer above the tunneling SiO 2 layer. Furthermore, the proposed Center Path device successfully demonstrates the integration with homeostasis functionality observed in biological neurons due to its discrete operational schemes.
{"title":"Highly Reliable Lateral Migration-Based TFT-Type Neuron Device for Spiking Neural Networks","authors":"Min-Kyu Park;Joon Hwang;Jong-Ho Bae;Jae-Joon Kim;Jong-Ho Lee","doi":"10.1109/LED.2024.3445970","DOIUrl":"https://doi.org/10.1109/LED.2024.3445970","url":null,"abstract":"A CMOS-compatible Thin Film Transistor (TFT)-type Center Path neuron device with homeostasis characteristics is proposed. By modifying the charge injection path of the gate insulator stack, the proposed neuron device operates with lateral migration, which was conventionally perceived as a disadvantage in the memory industry. Various measured electrical characteristics of the Center Path device show that directly injected charges from the channel poly-Si to the charge trap Si\u0000<sub>3</sub>\u0000N\u0000<sub>4</sub>\u0000 with low operational voltage laterally migrate to the Si\u0000<sub>3</sub>\u0000N\u0000<sub>4</sub>\u0000 layer above the tunneling SiO\u0000<sub>2</sub>\u0000 layer. Furthermore, the proposed Center Path device successfully demonstrates the integration with homeostasis functionality observed in biological neurons due to its discrete operational schemes.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"45 10","pages":"1780-1783"},"PeriodicalIF":4.1,"publicationDate":"2024-08-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142368271","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In this letter, we report a self-powered Ti 3 C 2 T x /Si nanoholes array (SiNHA) Schottky photodiode fabricated by spin-coating Ti 3 C 2 T x layer. The device exhibited enhanced photoresponse over the broadband wavelength range (265-1200 nm) and an excellent linear dynamic range (LDR, 119 dB), showing responsivity, specific detectivity and response speed of 0.97 A W $^{-{1}}$ , $1.03times 10^{{14}}$ Jones and 162/ $60~mu $ s for rise/fall time at zero bias upon 970 nm illumination (light intensity: $2.5~mu $ W cm $^{-{2}}$ ), respectively. The broadband photoresponse ensured the high-quality visible Fourier single-pixel imaging (FSI) and a $256times 256$ -pixel color image was achieved by synthesizing R-, G-, and B-channel monochrome images obtained at 7.79% sampling rate. This work also provides a simple strategy for filter-free color single-pixel imaging (SPI).
在这封信中，我们报告了一种通过旋涂 Ti3C2Tx 层制造的自供电 Ti3C2Tx/Si 纳米孔阵列（SiNHA）肖特基光电二极管。该器件在宽带波长范围（265-1200 nm）内表现出更强的光响应能力和出色的线性动态范围（LDR，119 dB），其响应率、比检出率和响应速度均为 0.97 A W $^{-{1}}$ 、1.03/times 10^{{14}}$ Jones 和 162/ $60~mu $ s 的上升/下降时间，分别是在 970 nm 照明（光强：2.5~mu $ W cm $^{-{2}}$ ）时的零偏压条件下。宽带光响应确保了高质量的可见光傅立叶单像素成像（FSI），通过合成以 7.79% 采样率获得的 R、G 和 B 信道单色图像，实现了 256/times 256$ 像素的彩色图像。这项工作还为无滤波器彩色单像素成像（SPI）提供了一种简单的策略。
{"title":"Ti₃C₂Tₓ/Si Nanoholes Array (SiNHA) Schottky Photodiode for Filter-Free Color Single-Pixel Imaging (SPI)","authors":"Jinxulong Gao;Xinhui He;Wei Shu;Yizhong Yang;Xing Chen;Linbao Luo;Chunyan Wu","doi":"10.1109/LED.2024.3445951","DOIUrl":"https://doi.org/10.1109/LED.2024.3445951","url":null,"abstract":"In this letter, we report a self-powered Ti\u0000<sub>3</sub>\u0000C\u0000<sub>2</sub>\u0000T\u0000<sub>x</sub>\u0000/Si nanoholes array (SiNHA) Schottky photodiode fabricated by spin-coating Ti\u0000<sub>3</sub>\u0000C\u0000<sub>2</sub>\u0000T\u0000<sub>x</sub>\u0000 layer. The device exhibited enhanced photoresponse over the broadband wavelength range (265-1200 nm) and an excellent linear dynamic range (LDR, 119 dB), showing responsivity, specific detectivity and response speed of 0.97 A W\u0000<inline-formula> <tex-math>$^{-{1}}$ </tex-math></inline-formula>\u0000, \u0000<inline-formula> <tex-math>$1.03times 10^{{14}}$ </tex-math></inline-formula>\u0000 Jones and 162/\u0000<inline-formula> <tex-math>$60~mu $ </tex-math></inline-formula>\u0000s for rise/fall time at zero bias upon 970 nm illumination (light intensity: \u0000<inline-formula> <tex-math>$2.5~mu $ </tex-math></inline-formula>\u0000W cm\u0000<inline-formula> <tex-math>$^{-{2}}$ </tex-math></inline-formula>\u0000), respectively. The broadband photoresponse ensured the high-quality visible Fourier single-pixel imaging (FSI) and a \u0000<inline-formula> <tex-math>$256times 256$ </tex-math></inline-formula>\u0000-pixel color image was achieved by synthesizing R-, G-, and B-channel monochrome images obtained at 7.79% sampling rate. This work also provides a simple strategy for filter-free color single-pixel imaging (SPI).","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"45 10","pages":"1914-1917"},"PeriodicalIF":4.1,"publicationDate":"2024-08-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142368454","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This work reports on high-performance enhancement-mode (E-mode) AlN/GaN Schottky gate HEMT (AlN SGHEMT) for millimeter-wave applications. Utilizing an ultrathin 4-nm barrier of AlN tuned by the mechanical stress from in-situ SiN, and self-terminated etching technique, to form the E-mode AlN SGHEMT. As a result, the proposed device demonstrated positive threshold voltage ( ${V}_{text {Th}}text {)}$ of 0.53 V, high maximum drain current density ( ${I}_{text {d- {max}}}text {)}$ of 1.19 A/mm, and maximum transconductance ( ${G}_{text {m- {max}}}text {)}$ of $sim ~0.61$ S/mm. Load-pull test was carried out at 30 GHz, which illustrated the ability of device to deliver a saturated output power density ( ${P}_{text {sat}}text {)}$ of 5.59 W/mm at a drain-source voltage ( ${V}_{text {ds}}text {)}$ of 25 V. The excellent results highlight a new approach to obtain mmW RF E-mode GaN HEMTs at Ka-band.
这项研究报告了用于毫米波应用的高性能增强模式（E-mode）AlN/GaN 肖特基栅 HEMT（AlN SGHEMT）。利用原位 SiN 机械应力调谐的 4 纳米超薄 AlN 势垒和自终止蚀刻技术，形成了 E 模式 AlN SGHEMT。因此，该器件的正阈值电压（{V}_{text {Th}text {）}$为 0.53 V，最大漏极电流密度（{I}_{text {d- {max}}}text {）}$为 1.19 A/mm，最大跨导（{G}_{text {m- {max}}text {）}$为 0.61 S/mm。在 30 GHz 频率下进行了负载-拉力测试，结果表明，在漏极-源极电压（${V}_{text {ds}}text {）}$为 25 V 时，器件能够提供 5.59 W/mm 的饱和输出功率密度（${P}_{text {sat}}text {）}$。这些出色的结果凸显了一种获得 Ka 波段毫米波射频电模 GaN HEMT 的新方法。
{"title":"5.59 W/mm Saturated Output Power Density at 30 GHz From E-Mode AlN/GaN HEMT Using Selective Etch of In Situ SiN Passivation Layer","authors":"Pengfei Wang;Minhan Mi;Sirui An;Yuwei Zhou;Zhihong Chen;Qing Zhu;Xiang Du;Yilin Chen;Meng Zhang;Bin Hou;Ruqing Liu;Xiaohua Ma;Yue Hao","doi":"10.1109/LED.2024.3437765","DOIUrl":"https://doi.org/10.1109/LED.2024.3437765","url":null,"abstract":"This work reports on high-performance enhancement-mode (E-mode) AlN/GaN Schottky gate HEMT (AlN SGHEMT) for millimeter-wave applications. Utilizing an ultrathin 4-nm barrier of AlN tuned by the mechanical stress from in-situ SiN, and self-terminated etching technique, to form the E-mode AlN SGHEMT. As a result, the proposed device demonstrated positive threshold voltage (\u0000<inline-formula> <tex-math>${V}_{text {Th}}text {)}$ </tex-math></inline-formula>\u0000 of 0.53 V, high maximum drain current density (\u0000<inline-formula> <tex-math>${I}_{text {d- {max}}}text {)}$ </tex-math></inline-formula>\u0000 of 1.19 A/mm, and maximum transconductance (\u0000<inline-formula> <tex-math>${G}_{text {m- {max}}}text {)}$ </tex-math></inline-formula>\u0000 of \u0000<inline-formula> <tex-math>$sim ~0.61$ </tex-math></inline-formula>\u0000 S/mm. Load-pull test was carried out at 30 GHz, which illustrated the ability of device to deliver a saturated output power density (\u0000<inline-formula> <tex-math>${P}_{text {sat}}text {)}$ </tex-math></inline-formula>\u0000 of 5.59 W/mm at a drain-source voltage (\u0000<inline-formula> <tex-math>${V}_{text {ds}}text {)}$ </tex-math></inline-formula>\u0000 of 25 V. The excellent results highlight a new approach to obtain mmW RF E-mode GaN HEMTs at Ka-band.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"45 10","pages":"1717-1720"},"PeriodicalIF":4.1,"publicationDate":"2024-08-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142383505","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-08-14DOI: 10.1109/LED.2024.3442853
Fan Li;Ang Li;Shiqiang Wu;Weisheng Wang;Yuhao Zhu;Guohao Yu;Zhongming Zeng;Baoshun Zhang;Jiangmin Gu;Wen Liu
This letter presents a monolithic integrated circuit (IC) platform based on the p-GaN gated HEMT technology with a hydrogen plasma treatment (H-treated) process. A 48 V DC-DC power conversion at a switching frequency of 1 MHz is realized. The peripheral enhancement/depletion (E/D-) mode devices formed circuit components, and monolithically integrated with the power device. This is the first H-treated p-GaN platform for the monolithic GaN mixed-signal power IC, the D-mode device will employ the H-treated p-GaN layer as the gate dielectric, with no additional insulator layer. The corresponding ASM-HEMT models have been calibrated for the computer-aided circuit design. Excellent agreement between simulation and static/dynamic experimental results have also been verified with inverters and comparators.
本文介绍了一种基于氢等离子处理（H-treated）工艺的 p-GaN 门控 HEMT 技术的单片集成电路（IC）平台。实现了开关频率为 1 MHz 的 48 V DC-DC 电源转换。外围增强/耗尽（E/D-）模式器件形成电路元件，并与功率器件单片集成。这是首个用于单片 GaN 混合信号功率集成电路的 H 处理 p-GaN 平台，D 模器件将采用 H 处理 p-GaN 层作为栅极电介质，不需要额外的绝缘层。相应的 ASM-HEMT 模型已为计算机辅助电路设计进行了校准。模拟与静态/动态实验结果之间的出色一致性也已通过逆变器和比较器得到验证。
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Studying the ferroelectric (FE) polarization behavior and failure mechanism of hafnia-based FE devices at varying temperatures is essential for enhancing the reliability of FE memory under real-working conditions. In this study, we investigated the remnant polarization (Pr) fluctuation during electrical cycling in Hf $_{{0}.{5}}$ Zr $_{{0}.{5}}$ O 2 (HZO) capacitors at elevated temperatures. The decrease in Pr can be attributed to the formation and thickening of the tetragonal (T-) phase interface layer, which reduces the electric field applied to the orthorhombic (O-) phase layer. The subsequent increase in Pr is caused by oxygen defects and leakage current in the T-phase interface layer, raising the electric field applied to the O-FE layer. Therefore, fluctuations in the electric field applied to the O-FE layer are considered as the primary cause for Pr fluctuation. Our direct characterization of T-layers, defects, and electrical properties offers insights into assessing FE phase stability and oxygen defect evolution in fluorite-type FE materials, guiding strategies to enhance device reliability.
研究基于铪的铁电（FE）器件在不同温度下的极化行为和失效机制对于提高 FE 存储器在实际工作条件下的可靠性至关重要。在本研究中，我们研究了高温下 Hf $_{{0}.{5}}$ Zr $_{{0}.{5}}$ O2 (HZO) 电容器在电循环过程中的残余极化（Pr）波动。Pr值的降低可归因于四方（T-）相界面层的形成和增厚，从而降低了施加到正方（O-）相层的电场。随后，T 相界面层中的氧缺陷和漏电流导致 Pr 值增加，从而提高了施加到 O-FE 层的电场。因此，施加到 O-FE 层的电场波动被认为是 Pr 波动的主要原因。我们对 T 层、缺陷和电特性的直接表征为评估萤石型 FE 材料的 FE 相稳定性和氧缺陷演化提供了见解，为提高器件可靠性的策略提供了指导。
{"title":"The Fluctuation Effect of Remnant Polarization in Hf₀.₅Zr₀.₅O₂ Capacitors at Elevated Temperatures","authors":"Zhaomeng Gao;Yunzhe Zheng;Tianjiao Xin;Cheng Liu;Qiwendong Zhao;Yilin Xu;Yonghui Zheng;Xiaoling Lin;Hangbing Lyu;Yan Cheng","doi":"10.1109/LED.2024.3443619","DOIUrl":"https://doi.org/10.1109/LED.2024.3443619","url":null,"abstract":"Studying the ferroelectric (FE) polarization behavior and failure mechanism of hafnia-based FE devices at varying temperatures is essential for enhancing the reliability of FE memory under real-working conditions. In this study, we investigated the remnant polarization (Pr) fluctuation during electrical cycling in Hf\u0000<inline-formula> <tex-math>$_{{0}.{5}}$ </tex-math></inline-formula>\u0000Zr\u0000<inline-formula> <tex-math>$_{{0}.{5}}$ </tex-math></inline-formula>\u0000O\u0000<sub>2</sub>\u0000 (HZO) capacitors at elevated temperatures. The decrease in Pr can be attributed to the formation and thickening of the tetragonal (T-) phase interface layer, which reduces the electric field applied to the orthorhombic (O-) phase layer. The subsequent increase in Pr is caused by oxygen defects and leakage current in the T-phase interface layer, raising the electric field applied to the O-FE layer. Therefore, fluctuations in the electric field applied to the O-FE layer are considered as the primary cause for Pr fluctuation. Our direct characterization of T-layers, defects, and electrical properties offers insights into assessing FE phase stability and oxygen defect evolution in fluorite-type FE materials, guiding strategies to enhance device reliability.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"45 10","pages":"1788-1791"},"PeriodicalIF":4.1,"publicationDate":"2024-08-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142368579","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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