Pub Date : 2025-07-25DOI: 10.1109/LED.2025.3588288
{"title":"Wide Band Gap Semiconductors for Automotive Applications","authors":"","doi":"10.1109/LED.2025.3588288","DOIUrl":"https://doi.org/10.1109/LED.2025.3588288","url":null,"abstract":"","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 8","pages":"1444-1445"},"PeriodicalIF":4.1,"publicationDate":"2025-07-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11096961","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144705014","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-07-25DOI: 10.1109/LED.2025.3588290
{"title":"Ultrawide Band Gap Semiconductor Devices for RF, Power and Optoelectronic Applications","authors":"","doi":"10.1109/LED.2025.3588290","DOIUrl":"https://doi.org/10.1109/LED.2025.3588290","url":null,"abstract":"","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 8","pages":"1448-1449"},"PeriodicalIF":4.1,"publicationDate":"2025-07-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11096958","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144705032","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-07-25DOI: 10.1109/LED.2025.3588292
{"title":"IEEE Transactions on Electron Devices Table of Contents","authors":"","doi":"10.1109/LED.2025.3588292","DOIUrl":"https://doi.org/10.1109/LED.2025.3588292","url":null,"abstract":"","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 8","pages":"1450-C3"},"PeriodicalIF":4.1,"publicationDate":"2025-07-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11096959","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144705235","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-07-25DOI: 10.1109/LED.2025.3588286
{"title":"IEEE Electron Device Letters Information for Authors","authors":"","doi":"10.1109/LED.2025.3588286","DOIUrl":"https://doi.org/10.1109/LED.2025.3588286","url":null,"abstract":"","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 8","pages":"1443-1443"},"PeriodicalIF":4.1,"publicationDate":"2025-07-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11096970","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144705236","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
For AlGaN-based deep ultraviolet light-emitting diodes, more than 50% ultraviolet photons are not able to escape from chips despite the ever-designed advanced light extraction structures. In this work, we take the advantage of the unescaped ultraviolet photons to regenerate holes. The photon-assisted hole regenerator in our integrated optoelectronic device consists of a reversely biased n-ZnO/p-GaN structure. Our optical transmittance measurement shows that the n-ZnO layer of as thick as ~70 nm can effectively absorb the ultraviolet emission from the active region, so that the electron-hole pairs can be regenerated. Considering the resistive reversely biased n-ZnO/p-GaN junction, we also design and fabricate n-ZnO microrod matrix so that the p-type ohmic contact is also fabricated on the exposed p-GaN region. Our studies show that the proposed design enhances the wall-plug efficiency by 44%.
{"title":"Integrating a Photon-Assisted Hole Regenerator Into AlGaN-Based Deep Ultraviolet Light-Emitting Diodes to Boost the Wall-Plug Efficiency","authors":"Jianyu Liu;Chunshuang Chu;Wenjie Li;Linhao Wang;Yuling Wu;Chong Wang;Kangkai Tian;Fuping Huang;Haoyan Liu;Yonghui Zhang;Naixin Liu;Jianchang Yan;Zi-Hui Zhang","doi":"10.1109/LED.2025.3592714","DOIUrl":"https://doi.org/10.1109/LED.2025.3592714","url":null,"abstract":"For AlGaN-based deep ultraviolet light-emitting diodes, more than 50% ultraviolet photons are not able to escape from chips despite the ever-designed advanced light extraction structures. In this work, we take the advantage of the unescaped ultraviolet photons to regenerate holes. The photon-assisted hole regenerator in our integrated optoelectronic device consists of a reversely biased n-ZnO/p-GaN structure. Our optical transmittance measurement shows that the n-ZnO layer of as thick as ~70 nm can effectively absorb the ultraviolet emission from the active region, so that the electron-hole pairs can be regenerated. Considering the resistive reversely biased n-ZnO/p-GaN junction, we also design and fabricate n-ZnO microrod matrix so that the p-type ohmic contact is also fabricated on the exposed p-GaN region. Our studies show that the proposed design enhances the wall-plug efficiency by 44%.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 10","pages":"1745-1748"},"PeriodicalIF":4.5,"publicationDate":"2025-07-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145315317","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-07-25DOI: 10.1109/LED.2025.3588276
{"title":"Reliability of Advanced Nodes","authors":"","doi":"10.1109/LED.2025.3588276","DOIUrl":"https://doi.org/10.1109/LED.2025.3588276","url":null,"abstract":"","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 8","pages":"1446-1447"},"PeriodicalIF":4.1,"publicationDate":"2025-07-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11096609","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144705274","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-07-22DOI: 10.1109/LED.2025.3590716
Hongbin Wang;Peng Li;Lin Yang;Zhongzheng Jin;Jiangang Ma;Yichun Liu
Ga2O3 leverage high deep-ultraviolet (DUV) responsivity and persistent photoconductivity (PPC) to enable low-power synaptic devices. However, limited PPC relaxation controllability in existing Ga2O3 synapses restricts tunable plasticity. This work demonstrates a piezo/photo-gated modulated Ga2O3/ZnO synaptic device for multimodal perception. The device exhibits reconfigurable synaptic plasticity—including paired-pulse facilitation, short-to-long-term plasticity transition, and dynamic weight modulation—under 254 nm light pulses. Crucially, compressive strain (-0.57%) enhances synaptic weight change by 22% (from 1076.3% to 1310.2%), attributed to strain-induced band bending at the heterojunction interface that regulates carrier separation and oxygen vacancy recombination. This strain-modulated behavior enables intelligent health care to the human body, where electrocardiogram pattern recognition achieves 83.5% accuracy using a single-layer neural network. This study establishes a viable approach for developing functionally tunable photoelectric synapses with co-integrated sensing-memory-processing capabilities for artificial tactile-perception systems.
{"title":"Ga₂O₃-Based Optoelectronic Synapse With Piezo/Photo-Gated Modulation for Multimodal Perception","authors":"Hongbin Wang;Peng Li;Lin Yang;Zhongzheng Jin;Jiangang Ma;Yichun Liu","doi":"10.1109/LED.2025.3590716","DOIUrl":"https://doi.org/10.1109/LED.2025.3590716","url":null,"abstract":"Ga2O3 leverage high deep-ultraviolet (DUV) responsivity and persistent photoconductivity (PPC) to enable low-power synaptic devices. However, limited PPC relaxation controllability in existing Ga2O3 synapses restricts tunable plasticity. This work demonstrates a piezo/photo-gated modulated Ga2O3/ZnO synaptic device for multimodal perception. The device exhibits reconfigurable synaptic plasticity—including paired-pulse facilitation, short-to-long-term plasticity transition, and dynamic weight modulation—under 254 nm light pulses. Crucially, compressive strain (-0.57%) enhances synaptic weight change by 22% (from 1076.3% to 1310.2%), attributed to strain-induced band bending at the heterojunction interface that regulates carrier separation and oxygen vacancy recombination. This strain-modulated behavior enables intelligent health care to the human body, where electrocardiogram pattern recognition achieves 83.5% accuracy using a single-layer neural network. This study establishes a viable approach for developing functionally tunable photoelectric synapses with co-integrated sensing-memory-processing capabilities for artificial tactile-perception systems.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 9","pages":"1525-1528"},"PeriodicalIF":4.5,"publicationDate":"2025-07-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144918342","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-07-21DOI: 10.1109/LED.2025.3590787
Manuel Fregolent;Carlo De Santi;Mirco Boito;Michele Disarò;Alessio Pirani;Maria Eloisa Castagna;Cristina Miccoli;Giansalvo Pizzo;Isabella Rossetto;Lorenzo Cerati;Ferdinando Iucolano;Gaudenzio Meneghesso;Enrico Zanoni;Matteo Meneghini
This letter substantially improves the understanding on the degradation of normally-OFF GaN HEMTs with p-GaN gate subject to forward gate stress, and demonstrates that a significant reliability enhancement can be obtained at high bias through hole injection from the gate terminal. Key results are: (i) for the first time we adopt an experimental setup capable of investigating the threshold voltage shift of the devices during time-dependent breakdown tests in a wide time window (from $mu $ s to failure). (ii) Remarkably, we demonstrate that the acceleration factor for gate breakdown is substantially lower at high stress voltage. (iii) The lower acceleration factor of degradation at high voltages is correlated to the number of holes which are injected and trapped in the gate stack. The results give strong experimental evidence that the injection of holes from the p-GaN contact can have a beneficial effect on device robustness, by reducing – through recombination – the amount of hot electrons responsible for degradation.
这封信极大地提高了对正常off GaN hemt的理解，p-GaN栅极在正向栅极应力下的退化，并证明了在栅极端通过孔注入的高偏置情况下可以获得显著的可靠性增强。关键结果是：(i)我们首次采用了一种实验装置，能够在宽时间窗口（从$mu $ s到失效）中研究器件在时间相关击穿测试期间的阈值电压位移。（ii）值得注意的是，我们证明了栅极击穿的加速因子在高应力电压下大大降低。（iii）高电压下较低的退化加速因子与注入和困在栅极堆中的孔数有关。结果提供了强有力的实验证据，证明从p-GaN接触中注入空穴可以通过重组减少导致降解的热电子的数量，从而对器件的鲁棒性产生有益的影响。
{"title":"Enhanced Gate Reliability of p-GaN/AlGaN/GaN HEMTs Due to Gate Hole Injection and Recombination","authors":"Manuel Fregolent;Carlo De Santi;Mirco Boito;Michele Disarò;Alessio Pirani;Maria Eloisa Castagna;Cristina Miccoli;Giansalvo Pizzo;Isabella Rossetto;Lorenzo Cerati;Ferdinando Iucolano;Gaudenzio Meneghesso;Enrico Zanoni;Matteo Meneghini","doi":"10.1109/LED.2025.3590787","DOIUrl":"https://doi.org/10.1109/LED.2025.3590787","url":null,"abstract":"This letter substantially improves the understanding on the degradation of normally-OFF GaN HEMTs with p-GaN gate subject to forward gate stress, and demonstrates that a significant reliability enhancement can be obtained at high bias through hole injection from the gate terminal. Key results are: (i) for the first time we adopt an experimental setup capable of investigating the threshold voltage shift of the devices during time-dependent breakdown tests in a wide time window (from <inline-formula> <tex-math>$mu $ </tex-math></inline-formula>s to failure). (ii) Remarkably, we demonstrate that the acceleration factor for gate breakdown is substantially lower at high stress voltage. (iii) The lower acceleration factor of degradation at high voltages is correlated to the number of holes which are injected and trapped in the gate stack. The results give strong experimental evidence that the injection of holes from the p-GaN contact can have a beneficial effect on device robustness, by reducing – through recombination – the amount of hot electrons responsible for degradation.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 9","pages":"1517-1520"},"PeriodicalIF":4.5,"publicationDate":"2025-07-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144918193","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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