Pub Date : 2025-10-16DOI: 10.1109/LED.2025.3622380
Arnout Beckers
Fully conductive band tails cause the subthreshold swing to saturate at temperatures above 1 K. However, recent measurements indicate that below 1 K, the subthreshold swing in certain MOSFET structures resumes a linear scaling with temperature. Following this ultra-steep behavior, a new type of plateau has been measured below 1 K. In this letter, we show that hybrid band tails, with both traps and mobile states, explain this new plateau. Furthermore, hybrid band tails explain various non-saturating behaviors above 1 K. Remarkably, for entirely non-conductive band tails, the simulations and theory predict a third type of plateau below 10 mK. We hypothesize that this represents the lower bound of subthreshold swing at sub-Kelvin temperatures, which is a testable prediction from the theory.
{"title":"Theoretical Limit of MOSFET Subthreshold Swing at Sub-Kelvin Temperatures","authors":"Arnout Beckers","doi":"10.1109/LED.2025.3622380","DOIUrl":"https://doi.org/10.1109/LED.2025.3622380","url":null,"abstract":"Fully conductive band tails cause the subthreshold swing to saturate at temperatures above 1 K. However, recent measurements indicate that below 1 K, the subthreshold swing in certain MOSFET structures resumes a linear scaling with temperature. Following this ultra-steep behavior, a new type of plateau has been measured below 1 K. In this letter, we show that hybrid band tails, with both traps and mobile states, explain this new plateau. Furthermore, hybrid band tails explain various non-saturating behaviors above 1 K. Remarkably, for entirely non-conductive band tails, the simulations and theory predict a third type of plateau below 10 mK. We hypothesize that this represents the lower bound of subthreshold swing at sub-Kelvin temperatures, which is a testable prediction from the theory.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 12","pages":"2309-2312"},"PeriodicalIF":4.5,"publicationDate":"2025-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11205872","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145674817","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This letter reports the successful development and testing of a compact W-band sheet-beam traveling-wave tube (TWT) integrated with a periodically-cusped magnetic (PCM) focusing system. The prototype exhibits a compact form factor of 70 mm $times 83$ mm $times 240$ mm and a weight of less than 2.1 kg. Driven by a 25.5-kV, 141-mA elliptical electron beam, the amplifier delivers approximately 200 W of peak power at 94 GHz, with output power above 100 W across the frequency range of 89–100 GHz. Notably, the long-distance transmission of the sheet beam (over 120 mm) is realized with a measured transport current of 130 mA corresponding to 92% of the total beam current. This work lays a foundation for application of the sheet-beam TWT in miniaturized high-frequency microwave systems.
本文报道了一种紧凑的w波段板束行波管（TWT）的成功开发和测试，该行波管集成了周期性尖头磁聚焦系统。原型机的紧凑外形尺寸为70 mm × 83 mm × 240 mm，重量小于2.1 kg。该放大器由25.5 kv、141 ma椭圆电子束驱动，在94 GHz频率下提供约200 W的峰值功率，在89-100 GHz频率范围内输出功率超过100 W。值得注意的是，在测量传输电流为130 mA的情况下，实现了板状光束（超过120 mm）的长距离传输，占光束总电流的92%。该工作为板束行波管在小型化高频微波系统中的应用奠定了基础。
{"title":"Demonstration of a Compact W-Band Sheet Beam Traveling-Wave Tube","authors":"Changqing Zhang;Xueliang Chen;Lin Zhang;Siming Su;Bowen Song;Pan Pan;Jun Cai;Yubin Gong;Jinjun Feng","doi":"10.1109/LED.2025.3622323","DOIUrl":"https://doi.org/10.1109/LED.2025.3622323","url":null,"abstract":"This letter reports the successful development and testing of a compact W-band sheet-beam traveling-wave tube (TWT) integrated with a periodically-cusped magnetic (PCM) focusing system. The prototype exhibits a compact form factor of 70 mm <inline-formula> <tex-math>$times 83$ </tex-math></inline-formula> mm <inline-formula> <tex-math>$times 240$ </tex-math></inline-formula> mm and a weight of less than 2.1 kg. Driven by a 25.5-kV, 141-mA elliptical electron beam, the amplifier delivers approximately 200 W of peak power at 94 GHz, with output power above 100 W across the frequency range of 89–100 GHz. Notably, the long-distance transmission of the sheet beam (over 120 mm) is realized with a measured transport current of 130 mA corresponding to 92% of the total beam current. This work lays a foundation for application of the sheet-beam TWT in miniaturized high-frequency microwave systems.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 12","pages":"2317-2320"},"PeriodicalIF":4.5,"publicationDate":"2025-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11205892","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145665831","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This work demonstrates integration of GaN micro-light emitting diode ($mu $ LED) and GaN 2T1C (two GaN transistors and one MIM capacitor) circuit based on $p$ -GaN high-electron mobility transistor (HEMT). GaN HEMT is applied by hydrogen plasma treatment for normally-off operation with high uniformity, and provides injection current of 1.6 mA for $mu $ LED. Proposed 2T1C circuit achieves driving $mu $ LED under a scan rate of 100 kHz. Rise time and fall time of output voltage are $1.3~mu $ s and $0.8~mu $ s, which is beneficial to high refresh rate. Furthermore, $mu $ LED can be modulated in pulse amplitude modulation (PAM) operation mode by 2T1C circuit. The integrated configuration of GaN 2T1C and $mu $ LED has high current and fast response capabilities, benefiting high brightness and refresh rate, and showing use potential in fast switching, high-efficiency all-GaN $mu $ LED display.
{"title":"Integration of μLED and GaN 2T1C Circuit Based on Hydrogen-Treated p-GaN Technology","authors":"Jinxia Jiang;Ang Li;Guohao Yu;Qing Li;Han Yue;Yong Cai;Yiqun Wang;Zhongming Zeng;Baoshun Zhang","doi":"10.1109/LED.2025.3620904","DOIUrl":"https://doi.org/10.1109/LED.2025.3620904","url":null,"abstract":"This work demonstrates integration of GaN micro-light emitting diode (<inline-formula> <tex-math>$mu $ </tex-math></inline-formula>LED) and GaN 2T1C (two GaN transistors and one MIM capacitor) circuit based on <inline-formula> <tex-math>$p$ </tex-math></inline-formula>-GaN high-electron mobility transistor (HEMT). GaN HEMT is applied by hydrogen plasma treatment for normally-off operation with high uniformity, and provides injection current of 1.6 mA for <inline-formula> <tex-math>$mu $ </tex-math></inline-formula>LED. Proposed 2T1C circuit achieves driving <inline-formula> <tex-math>$mu $ </tex-math></inline-formula>LED under a scan rate of 100 kHz. Rise time and fall time of output voltage are <inline-formula> <tex-math>$1.3~mu $ </tex-math></inline-formula>s and <inline-formula> <tex-math>$0.8~mu $ </tex-math></inline-formula>s, which is beneficial to high refresh rate. Furthermore, <inline-formula> <tex-math>$mu $ </tex-math></inline-formula>LED can be modulated in pulse amplitude modulation (PAM) operation mode by 2T1C circuit. The integrated configuration of GaN 2T1C and <inline-formula> <tex-math>$mu $ </tex-math></inline-formula>LED has high current and fast response capabilities, benefiting high brightness and refresh rate, and showing use potential in fast switching, high-efficiency all-GaN <inline-formula> <tex-math>$mu $ </tex-math></inline-formula>LED display.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 12","pages":"2341-2344"},"PeriodicalIF":4.5,"publicationDate":"2025-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145665832","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-10-13DOI: 10.1109/LED.2025.3620683
Marco Liffredo;Silvan Stettler;Federico Peretti;Nan Xu;Luis Guillermo Villanueva
We report on the fabrication of a Hybrid SAW/BAW resonator made of a thin layer of Sc-doped AlN (AlScN) with a Sc concentration of 40 at% on a 4H-SiC substrate. A Sezawa mode, excited by a vertical electric field, exploits the ${d}_{31}$ piezoelectric coefficient to propagate a longitudinal acoustic wave in the AlScN. The resonant frequency is determined via the pitch in the interdigitated transducer (IDT) defined by Deep Ultraviolet (DUV) lithography. The resonant mode travels in the piezoelectric layer without leaking in the substrate thanks to the mismatch in acoustic phase velocities between the piezoelectric and substrate materials. We show the impact of the piezoelectric and IDT layers’ thickness on the two found modes. Importantly, we show how thin piezoelectric and electrode layers effectively suppress the Rayleigh mode. While some challenges in the deposition of AlScN remain towards a large coupling coefficient $k_{eff}^2$ , we show how wave confinement in the IDT obtains a good quality factor. We also show how modifying the IDT reflectivity allows us to engineer a stopband to prevent unwanted modes from being excited between resonance and antiresonance frequencies. Finally, we validate the simulation with fabricated and measured devices and present possible improvements to this resonator architecture.
{"title":"Rayleigh Wave Suppression in Al0.6Sc0.4N-on-SiC Resonators","authors":"Marco Liffredo;Silvan Stettler;Federico Peretti;Nan Xu;Luis Guillermo Villanueva","doi":"10.1109/LED.2025.3620683","DOIUrl":"https://doi.org/10.1109/LED.2025.3620683","url":null,"abstract":"We report on the fabrication of a Hybrid SAW/BAW resonator made of a thin layer of Sc-doped AlN (AlScN) with a Sc concentration of 40 at% on a 4H-SiC substrate. A Sezawa mode, excited by a vertical electric field, exploits the <inline-formula> <tex-math>${d}_{31}$ </tex-math></inline-formula> piezoelectric coefficient to propagate a longitudinal acoustic wave in the AlScN. The resonant frequency is determined via the pitch in the interdigitated transducer (IDT) defined by Deep Ultraviolet (DUV) lithography. The resonant mode travels in the piezoelectric layer without leaking in the substrate thanks to the mismatch in acoustic phase velocities between the piezoelectric and substrate materials. We show the impact of the piezoelectric and IDT layers’ thickness on the two found modes. Importantly, we show how thin piezoelectric and electrode layers effectively suppress the Rayleigh mode. While some challenges in the deposition of AlScN remain towards a large coupling coefficient <inline-formula> <tex-math>$k_{eff}^2$ </tex-math></inline-formula>, we show how wave confinement in the IDT obtains a good quality factor. We also show how modifying the IDT reflectivity allows us to engineer a stopband to prevent unwanted modes from being excited between resonance and antiresonance frequencies. Finally, we validate the simulation with fabricated and measured devices and present possible improvements to this resonator architecture.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 12","pages":"2333-2336"},"PeriodicalIF":4.5,"publicationDate":"2025-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145665761","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-10-09DOI: 10.1109/LED.2025.3619671
Z. X. Su;J. C. Cai;X. C. Lin;J. Zhang;X. K. Zhang;Z. Zhang;D. C. Chen;G. Y. Pan;Z. X. Liang;M. Asad;P. C. Yin;J. Xu;L. N. Yue;H. R. Yin;Y. Xu;G. Q. Zhao;W. X. Wang;Y. Y. Wei
An ultra-compact periodic reverse permanent magnet (PRPM) focusing system is proposed and experimentally validated for S-band high-power, high-efficiency multibeam klystrons (MBKs). Conventional PRPM designs typically use only 3–6 magnets to confine beam, requiring large transverse dimensions to suppress transverse magnetic field (TMF) and maintain full beam transmission, resulting in bulky structures and complex assembly. In contrast, the proposed approach employs ten plus magnets to form a multi-period configuration, enabling flexible TMF shaping by optimizing the dimensions of magnets and pole pieces, as well as the placement of pole piece apertures. This design generates a multi-reversal, symmetric TMF profile that cancels transverse beam deflections. Additionally, by locally trenched beam tunnel in non-cavity regions, 100% beam transmission is achieved even under strong beam–wave interactions. Compared with conventional configurations, the proposed PRPM reduces transverse dimension by 2 to 3 times, while simplifying fabrication, lowering cost, and supporting MBK miniaturization.
{"title":"Study on Miniaturized Periodic Reverse Permanent Magnet Focusing for Multibeam Klystrons","authors":"Z. X. Su;J. C. Cai;X. C. Lin;J. Zhang;X. K. Zhang;Z. Zhang;D. C. Chen;G. Y. Pan;Z. X. Liang;M. Asad;P. C. Yin;J. Xu;L. N. Yue;H. R. Yin;Y. Xu;G. Q. Zhao;W. X. Wang;Y. Y. Wei","doi":"10.1109/LED.2025.3619671","DOIUrl":"https://doi.org/10.1109/LED.2025.3619671","url":null,"abstract":"An ultra-compact periodic reverse permanent magnet (PRPM) focusing system is proposed and experimentally validated for S-band high-power, high-efficiency multibeam klystrons (MBKs). Conventional PRPM designs typically use only 3–6 magnets to confine beam, requiring large transverse dimensions to suppress transverse magnetic field (TMF) and maintain full beam transmission, resulting in bulky structures and complex assembly. In contrast, the proposed approach employs ten plus magnets to form a multi-period configuration, enabling flexible TMF shaping by optimizing the dimensions of magnets and pole pieces, as well as the placement of pole piece apertures. This design generates a multi-reversal, symmetric TMF profile that cancels transverse beam deflections. Additionally, by locally trenched beam tunnel in non-cavity regions, 100% beam transmission is achieved even under strong beam–wave interactions. Compared with conventional configurations, the proposed PRPM reduces transverse dimension by 2 to 3 times, while simplifying fabrication, lowering cost, and supporting MBK miniaturization.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 12","pages":"2321-2324"},"PeriodicalIF":4.5,"publicationDate":"2025-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145665781","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-10-09DOI: 10.1109/LED.2025.3617800
Fang-Jui Chu;En-Ching Chen;Xin-Ren Yu;Wen-Hsin Chang;Tatsuro Maeda;Chih-Yu Wang;Guang-Li Luo;Yao-Jen Lee;Yeong-Her Wang
In this work, we experimentally demonstrate a high-mobility Ge Complementary FET (CFET) fabricated by a wafer bonding technique. CMOS-friendly manufacturing processes, including vacuum annealing and TMAH-based etching solutions, have been developed to acquire high-quality suspended Ge channels. Significant improvement of surface roughness by at least 64% and elimination of mismatch dislocation of Ge nanosheets generated during Ge/Si epitaxial growth has been achieved. The suspended Ge channels exhibit nearly defect-free quality, leading to high-performance vertically stacked 3-layer pFET/3-layer nFET nanosheet (P-3NS/N-3NS) Ge CFET. Well-behaved Ge nanosheet p/nFETs performance and excellent voltage transfer characteristics (VTC) behaviors of Ge CFET inverters have been successfully demonstrated.
在这项工作中，我们实验证明了一个高迁移率的Ge互补FET （cfeet）是由晶圆键合技术制造的。cmos友好的制造工艺，包括真空退火和基于tmah的蚀刻解决方案，已经开发出高质量的悬浮锗通道。表面粗糙度提高了至少64%，消除了锗/硅外延生长过程中产生的锗纳米片的错配位错。悬浮的Ge通道表现出几乎无缺陷的质量，导致高性能垂直堆叠的3层pfeet /3层nfeet纳米片（P-3NS/N-3NS） Ge cfeet。成功地证明了良好的Ge纳米片p/ nfet性能和Ge CFET逆变器的优异电压转移特性（VTC）行为。
{"title":"Surface Roughness and Dislocation Defects Improvement in Monolithic High-Mobility Ge CFETs Through Vacuum Annealing","authors":"Fang-Jui Chu;En-Ching Chen;Xin-Ren Yu;Wen-Hsin Chang;Tatsuro Maeda;Chih-Yu Wang;Guang-Li Luo;Yao-Jen Lee;Yeong-Her Wang","doi":"10.1109/LED.2025.3617800","DOIUrl":"https://doi.org/10.1109/LED.2025.3617800","url":null,"abstract":"In this work, we experimentally demonstrate a high-mobility Ge Complementary FET (CFET) fabricated by a wafer bonding technique. CMOS-friendly manufacturing processes, including vacuum annealing and TMAH-based etching solutions, have been developed to acquire high-quality suspended Ge channels. Significant improvement of surface roughness by at least 64% and elimination of mismatch dislocation of Ge nanosheets generated during Ge/Si epitaxial growth has been achieved. The suspended Ge channels exhibit nearly defect-free quality, leading to high-performance vertically stacked 3-layer pFET/3-layer nFET nanosheet (P-3NS/N-3NS) Ge CFET. Well-behaved Ge nanosheet p/nFETs performance and excellent voltage transfer characteristics (VTC) behaviors of Ge CFET inverters have been successfully demonstrated.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 12","pages":"2357-2360"},"PeriodicalIF":4.5,"publicationDate":"2025-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145665760","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-10-07DOI: 10.1109/LED.2025.3618975
Jin Luo;Keqin Liu;Boyi Fu;Zheru Yu;Qianqian Huang;Ru Huang
In this work, for the first time, a novel ferroelectric (FE) tunnel FET (FeTFET) based synapse device with complementary Hebbian plasticity is proposed and experimentally demonstrated. The device leverages FE polarization switching dynamics to achieve spike-timing-dependent plasticity (STDP) and utilizes FE-modulated ambipolar band-to-band tunneling (BTBT) transports with opposite monotonicity for complementary synaptic weight updates. The fabricated FeTFET based on the 14nm FinFET platform enables configurable anti-STDP and STDP modes with single transistor of high CMOS compatibility, facilitating advanced supervised and reinforcement learning. Moreover, benefiting from the transition of BTBT windows, the FeTFET synapse exhibits historical activity-aware plasticity, enhancing the stability of the learning process and demonstrating its potential for highly integrated neuromorphic computing systems.
{"title":"A Novel Ferroelectric Tunnel FET-Based Synapse With Complementary Hebbian Plasticity Enhancing Learning of Spiking Neural Networks","authors":"Jin Luo;Keqin Liu;Boyi Fu;Zheru Yu;Qianqian Huang;Ru Huang","doi":"10.1109/LED.2025.3618975","DOIUrl":"https://doi.org/10.1109/LED.2025.3618975","url":null,"abstract":"In this work, for the first time, a novel ferroelectric (FE) tunnel FET (FeTFET) based synapse device with complementary Hebbian plasticity is proposed and experimentally demonstrated. The device leverages FE polarization switching dynamics to achieve spike-timing-dependent plasticity (STDP) and utilizes FE-modulated ambipolar band-to-band tunneling (BTBT) transports with opposite monotonicity for complementary synaptic weight updates. The fabricated FeTFET based on the 14nm FinFET platform enables configurable anti-STDP and STDP modes with single transistor of high CMOS compatibility, facilitating advanced supervised and reinforcement learning. Moreover, benefiting from the transition of BTBT windows, the FeTFET synapse exhibits historical activity-aware plasticity, enhancing the stability of the learning process and demonstrating its potential for highly integrated neuromorphic computing systems.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 12","pages":"2337-2340"},"PeriodicalIF":4.5,"publicationDate":"2025-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145665804","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Conventional passive memristor arrays face crosstalk challenges in on-chip neuromorphic computing, while 1T1R/1S1R architectures suffer from limited scalability and area overhead. Here, we propose a topology-aware recognition framework for crosstalk-free on-chip compute-in-memory (CIM) using high-performance Pt/In2O3(Cr-doped)/W memristors. The devices demonstrate exceptional metrics: an ultra-high on/off ratio (>108), retention exceeding $10^{{7}}$ s, and endurance over 105 cycles. Integrated into passive arrays, these memristors enable a novel paradigm that converts image pixel intensities into spatiotemporal pulse sequences encoding topological features (spatial brightness relationships). These features are mapped to ${32}times {32}$ crossbar arrays, where recognition is determined by counting diagonal-activated devices—ensuring single-device activation per row/column to eliminate crosstalk. The system achieves 99.8% accuracy on MNIST and scalability to 6.59 PB (with 10% read margin), outperforming existing on-chip networks. This work bridges device innovation with algorithmic co-design, advancing energy-efficient neuromorphic hardware for pattern recognition.
{"title":"Topology-Aware Recognition Framework Based on Ultra-High On/Off Ratio Memristors for Handwritten Digit Recognition","authors":"Zijian Wang;Guobin Zhang;Xuemeng Fan;Pengtao Li;Zhejia Zhang;Shengpeng Xing;Baichen Zhu;Qing Wan;Yishu Zhang","doi":"10.1109/LED.2025.3618257","DOIUrl":"https://doi.org/10.1109/LED.2025.3618257","url":null,"abstract":"Conventional passive memristor arrays face crosstalk challenges in on-chip neuromorphic computing, while 1T1R/1S1R architectures suffer from limited scalability and area overhead. Here, we propose a topology-aware recognition framework for crosstalk-free on-chip compute-in-memory (CIM) using high-performance Pt/In<sub>2</sub>O<sub>3</sub>(Cr-doped)/W memristors. The devices demonstrate exceptional metrics: an ultra-high on/off ratio (>108), retention exceeding <inline-formula> <tex-math>$10^{{7}}$ </tex-math></inline-formula> s, and endurance over 105 cycles. Integrated into passive arrays, these memristors enable a novel paradigm that converts image pixel intensities into spatiotemporal pulse sequences encoding topological features (spatial brightness relationships). These features are mapped to <inline-formula> <tex-math>${32}times {32}$ </tex-math></inline-formula> crossbar arrays, where recognition is determined by counting diagonal-activated devices—ensuring single-device activation per row/column to eliminate crosstalk. The system achieves 99.8% accuracy on MNIST and scalability to 6.59 PB (with 10% read margin), outperforming existing on-chip networks. This work bridges device innovation with algorithmic co-design, advancing energy-efficient neuromorphic hardware for pattern recognition.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 12","pages":"2349-2352"},"PeriodicalIF":4.5,"publicationDate":"2025-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145665821","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-10-06DOI: 10.1109/LED.2025.3617775
Chen Wang;Kerkhofs Ward;Jietse van Thienen;Appo van der Wiel;Ben Maes;Chengxin Li;Michiel Gidts
This study presents a novel closed-loop micro-electromechanical system infrared sensor that features dual-membranes, mitigating drift caused by the outgassing induced pressure change from the sensor hermetic package. Outgassing has an impact on the sensor thermal resistance. The closed-loop system controls the feedback heaters on the membrane directly to measure incident radiation, effectively eliminating the influence of thermal resistance on sensor performance. A comprehensive theoretical analysis and system-level modeling were performed. The sensor, along with the readout ASIC, was successfully fabricated on a single die. Experiments demonstrate that the closed-loop system reduces the effects of pressure change due to outgassing and input radiation on sensitivity by 24 times and 8 times, respectively. This method cancels sensor drift without increasing fabrication complexity, addressing a significant limitation of conventional infrared sensors and facilitating cost-effective packaging.
{"title":"Closed-Loop System Dual-Membrane for Mitigating Outgassing Induced Pressure Change in Infrared Sensors","authors":"Chen Wang;Kerkhofs Ward;Jietse van Thienen;Appo van der Wiel;Ben Maes;Chengxin Li;Michiel Gidts","doi":"10.1109/LED.2025.3617775","DOIUrl":"https://doi.org/10.1109/LED.2025.3617775","url":null,"abstract":"This study presents a novel closed-loop micro-electromechanical system infrared sensor that features dual-membranes, mitigating drift caused by the outgassing induced pressure change from the sensor hermetic package. Outgassing has an impact on the sensor thermal resistance. The closed-loop system controls the feedback heaters on the membrane directly to measure incident radiation, effectively eliminating the influence of thermal resistance on sensor performance. A comprehensive theoretical analysis and system-level modeling were performed. The sensor, along with the readout ASIC, was successfully fabricated on a single die. Experiments demonstrate that the closed-loop system reduces the effects of pressure change due to outgassing and input radiation on sensitivity by 24 times and 8 times, respectively. This method cancels sensor drift without increasing fabrication complexity, addressing a significant limitation of conventional infrared sensors and facilitating cost-effective packaging.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 12","pages":"2313-2316"},"PeriodicalIF":4.5,"publicationDate":"2025-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145665830","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-10-03DOI: 10.1109/LED.2025.3615652
Tien Dat Ngo;Xiangyu Wu;Kaustuv Banerjee;Olivier Richard;César Javier Lockhart de la Rosa;Gouri Sankar Kar;Bogdan Govoreanu
Surface charge transfer doping (SCTD) has emerged as a promising technique for doping 2D semiconductors, although it faces challenges in doping controllability, which impacts device performance. In this study, we introduce a novel approach to precisely control the p-type doping strength in solid-state SCTD for 2D WSe2 field-effect transistors (FET) through metal co-seeding. By sequentially depositing molybdenum (Mo) and hafnium (Hf) metal seeds followed by O2 annealing, we achieve improved doping control, while maintaining a high on/off current ratio. High-resolution transmission electron microscopy (HRTEM) images confirm the proposed co-seeding concept. This technique addresses doping controllability limitations in SCTD, enhances gate tunability, and it is viable for very-large-scale integration (VLSI) applications.
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