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Low-Frequency Noise Characteristics of Recessed Channel Ferroelectric Field-Effect Transistors 嵌入式沟道铁电场效应晶体管的低频噪声特性
IF 4.9 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-09-02 DOI: 10.1109/led.2024.3452776
Been Kwak, Jangsaeng Kim, Kitae Lee, Wonjun Shin, Daewoong Kwon
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引用次数: 0
X-ray detector with internal gain based on a SiC npn structure 基于碳化硅 npn 结构的具有内部增益的 X 射线探测器
IF 4.9 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-08-29 DOI: 10.1109/led.2024.3451623
Jing Wang, Liang Chen, Song Bai, Leidang Zhou, Fangbao Wang, Silong Zhang, Tingting Fan, Runhua Huang, Shaohua Yang, Geng Tian, Xiaoping Ouyang
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引用次数: 0
Variability Analysis and Improvement Strategies for Nanoscale Ferroelectric Hf0.5Zr0.5O2 Utilizing Schottky Emission Current in Switchable Diode 利用可切换二极管中的肖特基发射电流进行纳米级铁电 Hf0.5Zr0.5O2 的变异性分析和改进策略
IF 4.9 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-08-29 DOI: 10.1109/led.2024.3451968
Kyumin Lee, Sang-Ho Oh, Hojung Jang, Sunhyeong Lee, Byeong-Joo Lee, Hyunsnang Hwang
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引用次数: 0
Optimization of Programming Pulse Shape for Vertical NAND Flash Memory Using Neural Networks 利用神经网络优化垂直 NAND 闪存的编程脉冲形状
IF 4.9 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-08-28 DOI: 10.1109/led.2024.3451430
Sung-Ho Park, Jaehyeon Kim, Jonghyun Ko, Jiseong Im, Yeongheon Yang, Jae-Joon Kim, Jong-Ho Lee
{"title":"Optimization of Programming Pulse Shape for Vertical NAND Flash Memory Using Neural Networks","authors":"Sung-Ho Park, Jaehyeon Kim, Jonghyun Ko, Jiseong Im, Yeongheon Yang, Jae-Joon Kim, Jong-Ho Lee","doi":"10.1109/led.2024.3451430","DOIUrl":"https://doi.org/10.1109/led.2024.3451430","url":null,"abstract":"","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":null,"pages":null},"PeriodicalIF":4.9,"publicationDate":"2024-08-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142222912","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Exceptional Immunity of Drain-Induced Barrier Lowering Effect in a-IGZTO Transistors via Favorable Coupling Effects of Metal-H Bonding 通过金属-H 键合的有利耦合效应实现 a-IGZTO 晶体管对漏极诱导的势垒降低效应的超常免疫力
IF 4.9 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-08-27 DOI: 10.1109/led.2024.3450659
Gwang-Bok Kim, Se Eun Kim, Yena Kim, Kyeong-Seok Son, Joon Seok Park, Sunhee Lee, Jae Kyeong Jeong
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引用次数: 0
SOI Lateral Hall Device with Deep Trench Fingers for High Sensitivity and Low Offset 具有深沟指针的 SOI 侧向霍尔器件,可实现高灵敏度和低偏移
IF 4.9 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-08-27 DOI: 10.1109/led.2024.3449972
Guiqiang Zheng, Jie Ma, Yichen Li, Nannan Cheng, Qingyin Zhong, Lanlan Yang, Nailong He, Dejin Wang, Sen Zhang, Yongjia Li, Long Zhang, Siyang Liu, Weifeng Sun
{"title":"SOI Lateral Hall Device with Deep Trench Fingers for High Sensitivity and Low Offset","authors":"Guiqiang Zheng, Jie Ma, Yichen Li, Nannan Cheng, Qingyin Zhong, Lanlan Yang, Nailong He, Dejin Wang, Sen Zhang, Yongjia Li, Long Zhang, Siyang Liu, Weifeng Sun","doi":"10.1109/led.2024.3449972","DOIUrl":"https://doi.org/10.1109/led.2024.3449972","url":null,"abstract":"","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":null,"pages":null},"PeriodicalIF":4.9,"publicationDate":"2024-08-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142222914","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Bridging the Data Gap in Photovoltaics with Synthetic Data Generation 通过合成数据生成弥补光伏领域的数据差距
IF 4.1 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-08-26 DOI: 10.1109/LED.2024.3440815
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引用次数: 0
Blank Page 空白页
IF 4.1 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-08-26 DOI: 10.1109/LED.2024.3440871
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引用次数: 0
Special Issue on Intelligent Sensor Systems for the IEEE Journal of Electron Devices 电气和电子工程师学会电子器件期刊》智能传感器系统特刊
IF 4.1 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-08-26 DOI: 10.1109/LED.2024.3440827
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引用次数: 0
IEEE Electron Device Letters Publication Information IEEE Electron Device Letters 出版信息
IF 4.1 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-08-26 DOI: 10.1109/LED.2024.3440819
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引用次数: 0
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IEEE Electron Device Letters
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