Thin-film surface acoustic wave (TF-SAW) devices are important for wireless communication systems in the new age. Nevertheless, there are still some technical challenges including transverse mode suppression. To find out a practical solution for the challenge, this work theoretically and experimentally investigates transverse mode generation in TF-SAW devices based on LiTaO3/sapphire in which only mature and commercial materials are adopted. The devices with various Al thicknesses and wavelengths are simulated, and slowness curves, admittance curve and displacement distributions are all analyzed. A large range of wavelength from $1.6~mu $ m to $4~mu $ m or even larger is found for the devices to have flat slowness curves. TF-SAW resonators based on LiTaO3/sapphire without any designs for transverse mode suppression are fabricated. The transverse modes in the resonators with wavelength from $1.6~mu $ m to $3.8~mu $ m are all dramatically suppressed, agreeing well with the theoretical results. We believe that the suppression is sufficient, even though the transverse modes still exist. This work proposes a method to obtain TF-SAW devices with suppressed transverse mode generation, showing the strengths of LiTaO3/sapphire structure and promoting the development of TF-SAW technology.
薄膜表面声波（TF-SAW）器件对于新时代的无线通信系统非常重要。然而，目前仍存在一些技术难题，包括横向模式抑制。为了找到应对这一挑战的实用解决方案，本研究通过理论和实验研究了基于 LiTaO3/蓝宝石的 TF-SAW 器件中横向模式的产生。模拟了不同铝厚度和波长的器件，并分析了慢度曲线、导纳曲线和位移分布。结果发现，在 1.6~mu $ m 到 4~mu $ m 甚至更大的波长范围内，器件都能具有平坦的慢度曲线。基于钽铌酸锂/蓝宝石的 TF-SAW 谐振器在没有任何横向模式抑制设计的情况下被制造出来。波长从 1.6~mu $ m 到 3.8~mu $ m 的谐振器中的横向模式都被显著抑制，与理论结果吻合。我们认为，尽管横向模式仍然存在，但抑制已经足够了。这项工作提出了一种获得横向模式产生被抑制的TF-SAW器件的方法，显示了LiTaO3/蓝宝石结构的优势，促进了TF-SAW技术的发展。
{"title":"Suppressed Transverse Mode Generation in TF-SAW Resonators Based on LiTaO3/Sapphire","authors":"Junyao Shen;Wenfeng Yao;Temesgen Bailie Workie;Quhuan Shen;Qiufeng Xu;Jingfu Bao;Ken-Ya Hashimoto","doi":"10.1109/LED.2024.3459023","DOIUrl":"10.1109/LED.2024.3459023","url":null,"abstract":"Thin-film surface acoustic wave (TF-SAW) devices are important for wireless communication systems in the new age. Nevertheless, there are still some technical challenges including transverse mode suppression. To find out a practical solution for the challenge, this work theoretically and experimentally investigates transverse mode generation in TF-SAW devices based on LiTaO3/sapphire in which only mature and commercial materials are adopted. The devices with various Al thicknesses and wavelengths are simulated, and slowness curves, admittance curve and displacement distributions are all analyzed. A large range of wavelength from \u0000<inline-formula> <tex-math>$1.6~mu $ </tex-math></inline-formula>\u0000m to \u0000<inline-formula> <tex-math>$4~mu $ </tex-math></inline-formula>\u0000m or even larger is found for the devices to have flat slowness curves. TF-SAW resonators based on LiTaO3/sapphire without any designs for transverse mode suppression are fabricated. The transverse modes in the resonators with wavelength from \u0000<inline-formula> <tex-math>$1.6~mu $ </tex-math></inline-formula>\u0000m to \u0000<inline-formula> <tex-math>$3.8~mu $ </tex-math></inline-formula>\u0000m are all dramatically suppressed, agreeing well with the theoretical results. We believe that the suppression is sufficient, even though the transverse modes still exist. This work proposes a method to obtain TF-SAW devices with suppressed transverse mode generation, showing the strengths of LiTaO3/sapphire structure and promoting the development of TF-SAW technology.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"45 11","pages":"2241-2244"},"PeriodicalIF":4.1,"publicationDate":"2024-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142222882","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-12DOI: 10.1109/LED.2024.3458999
Xujin Song;Dijiang Sun;Chenxi Yu;Shangze Li;Zheng Zhou;Xiaoyan Liu;Jinfeng Kang
In this study, an optimized metal-ferroelectric –semiconductor (MFS) stack containing a La-doped HfO2(HLO) ferroelectric (FE) layer and an N-doped TiO2 (NTO) channel is proposed and used to fabricate highly stable ferroelectric field-effect transistors (FeFETs). HLO and NTO were continuously deposited via atomic layer deposition without breaking the vacuum. Uniform and crystallized FE layers and channels are confirmed in the optimized MFS stack. The fabricated FeFETs exhibit excellent electrical and thermal stability, including a 1.82-V memory window (MW) and high endurance over $10^{{8}}$ cycles with a wide process window above 700°C during rapid thermal annealing. Moreover, ambient stability of oxide semiconductor channel-based FeFETs with 115-mV MW shift after one year of air exposure without a passivation layer was demonstrated for the first time.
本研究提出了一种优化的金属-铁电-半导体（MFS）堆栈，其中包含掺杂 La 的 HfO2（HLO）铁电（FE）层和掺杂 N 的 TiO2（NTO）沟道，并将其用于制造高度稳定的铁电场效应晶体管（FeFET）。在不破坏真空的情况下，通过原子层沉积连续沉积了 HLO 和 NTO。在优化的 MFS 堆栈中确认了均匀结晶的铁电层和沟道。制造出的铁氧体场效应晶体管具有出色的电气和热稳定性，包括 1.82 V 的记忆窗口 (MW)，以及在快速热退火过程中超过 700°C 的宽工艺窗口下超过 10^{{8}}$ 周期的高耐久性。此外，在没有钝化层的情况下，基于氧化物半导体沟道的铁氧体场效应晶体管在暴露于空气中一年后仍能保持115毫伏毫瓦级的环境稳定性。
{"title":"Optimized MFS Stack With N-Doped TiO2 Channel and La-Doped HfO2 Ferroelectric Layer for Highly Stable FeFETs","authors":"Xujin Song;Dijiang Sun;Chenxi Yu;Shangze Li;Zheng Zhou;Xiaoyan Liu;Jinfeng Kang","doi":"10.1109/LED.2024.3458999","DOIUrl":"10.1109/LED.2024.3458999","url":null,"abstract":"In this study, an optimized metal-ferroelectric –semiconductor (MFS) stack containing a La-doped HfO2(HLO) ferroelectric (FE) layer and an N-doped TiO2 (NTO) channel is proposed and used to fabricate highly stable ferroelectric field-effect transistors (FeFETs). HLO and NTO were continuously deposited via atomic layer deposition without breaking the vacuum. Uniform and crystallized FE layers and channels are confirmed in the optimized MFS stack. The fabricated FeFETs exhibit excellent electrical and thermal stability, including a 1.82-V memory window (MW) and high endurance over \u0000<inline-formula> <tex-math>$10^{{8}}$ </tex-math></inline-formula>\u0000 cycles with a wide process window above 700°C during rapid thermal annealing. Moreover, ambient stability of oxide semiconductor channel-based FeFETs with 115-mV MW shift after one year of air exposure without a passivation layer was demonstrated for the first time.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"45 11","pages":"2213-2216"},"PeriodicalIF":4.1,"publicationDate":"2024-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142222878","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-12DOI: 10.1109/LED.2024.3459049
Nicola Rinaldi;Alexander May;Mathias Rommel;Rosalba Liguori;Alfredo Rubino;Gian Domenico Licciardo;Luigi Di Benedetto
The experimental characteristics of a temperature sensor based on a 4H-SiC diode-connected lateral NMOSFET are shown in the range between 14K and 481K. The device is fully compatible with 4H-SiC CMOS technology. The analysis of the sensor characteristics reveals a main temperature dependence on the threshold voltage compared to the channel mobility. Due to the oxide/semiconductor interface traps, the sensor characteristic is divided in three temperature ranges to obtain a good linearity: in 14K $leq $ T $leq 200$ K, the sensitivity is 53.46mV/K, the rms error is 5.49K and the coefficient of determination is 0.9927 for a bias current of $1.59mu $ A; instead, a current of $100mu $ A permits to have a maximum coefficient of determination of 0.9708 with a sensitivity of 29.9mV/K for 200K < T $leq 394$ K, and a linearity of 0.9926 with a sensitivity of 13.72mV/K at T >394K. Finally, for currents between 870nA and $9mu $ A the linearity is higher than 0.95 in all temperature ranges.
基于 4H-SiC 二极管连接横向 NMOSFET 的温度传感器在 14K 至 481K 范围内的实验特性如图所示。该器件与 4H-SiC CMOS 技术完全兼容。对传感器特性的分析表明，与沟道迁移率相比，阈值电压主要取决于温度。由于氧化物/半导体界面阱，传感器特性分为三个温度范围，以获得良好的线性：在 14K $leq $ T $leq 200$ K 时，灵敏度为 53.46mV/K，均方根误差为 5.49K，确定系数为 0.当偏置电流为 1.59mu $ A 时，测定系数为 0.9708，灵敏度为 29.9mV/K；当偏置电流为 100mu $ A 时，测定系数为 0.9926，灵敏度为 13.72mV/K。最后，当电流在 870nA 和 9$mu $ A 之间时，线性度在所有温度范围内都高于 0.95。
{"title":"A 4H-SiC NMOSFET-Based Temperature Sensor Operating Between 14K and 481 K","authors":"Nicola Rinaldi;Alexander May;Mathias Rommel;Rosalba Liguori;Alfredo Rubino;Gian Domenico Licciardo;Luigi Di Benedetto","doi":"10.1109/LED.2024.3459049","DOIUrl":"10.1109/LED.2024.3459049","url":null,"abstract":"The experimental characteristics of a temperature sensor based on a 4H-SiC diode-connected lateral NMOSFET are shown in the range between 14K and 481K. The device is fully compatible with 4H-SiC CMOS technology. The analysis of the sensor characteristics reveals a main temperature dependence on the threshold voltage compared to the channel mobility. Due to the oxide/semiconductor interface traps, the sensor characteristic is divided in three temperature ranges to obtain a good linearity: in 14K \u0000<inline-formula> <tex-math>$leq $ </tex-math></inline-formula>\u0000 T \u0000<inline-formula> <tex-math>$leq 200$ </tex-math></inline-formula>\u0000K, the sensitivity is 53.46mV/K, the rms error is 5.49K and the coefficient of determination is 0.9927 for a bias current of \u0000<inline-formula> <tex-math>$1.59mu $ </tex-math></inline-formula>\u0000A; instead, a current of \u0000<inline-formula> <tex-math>$100mu $ </tex-math></inline-formula>\u0000A permits to have a maximum coefficient of determination of 0.9708 with a sensitivity of 29.9mV/K for 200K < T \u0000<inline-formula> <tex-math>$leq 394$ </tex-math></inline-formula>\u0000K, and a linearity of 0.9926 with a sensitivity of 13.72mV/K at T >394K. Finally, for currents between 870nA and \u0000<inline-formula> <tex-math>$9mu $ </tex-math></inline-formula>\u0000A the linearity is higher than 0.95 in all temperature ranges.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"45 11","pages":"2181-2184"},"PeriodicalIF":4.1,"publicationDate":"2024-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10679237","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142222881","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-11DOI: 10.1109/LED.2024.3458392
Yuri Vygranenko;Guilherme Lavareda
Dielectric function models are essential for determining the optical constants of a substance as a function of photon energy using optical transmission, reflection or spectroscopic ellipsometry measurements. In this letter, we present an extended Tauc–Lorentz model tailored for amorphous materials with non-exponential band tails. Our method employs an exponential function with a polynomial argument to define the imaginary part of the dielectric function in the sub-gap region, with the polynomial order varying based on the complexity of sub-gap absorption features and the precision of the fitted experimental data. The real part of the dielectric function is obtained through the Kramers–Kronig relations as a sum of two components associated with interband and sub-gap transitions, allowing for the comparison of their contributions. These components are calculated analytically and numerically, simplifying the model’s implementation. We illustrate the model’s application by extracting the optical constants from the transmission spectrum of a hydrogenated silicon nitride thin film.
{"title":"Extended Tauc-Lorentz Model for Amorphous Materials With Non-Exponential Band Tails","authors":"Yuri Vygranenko;Guilherme Lavareda","doi":"10.1109/LED.2024.3458392","DOIUrl":"10.1109/LED.2024.3458392","url":null,"abstract":"Dielectric function models are essential for determining the optical constants of a substance as a function of photon energy using optical transmission, reflection or spectroscopic ellipsometry measurements. In this letter, we present an extended Tauc–Lorentz model tailored for amorphous materials with non-exponential band tails. Our method employs an exponential function with a polynomial argument to define the imaginary part of the dielectric function in the sub-gap region, with the polynomial order varying based on the complexity of sub-gap absorption features and the precision of the fitted experimental data. The real part of the dielectric function is obtained through the Kramers–Kronig relations as a sum of two components associated with interband and sub-gap transitions, allowing for the comparison of their contributions. These components are calculated analytically and numerically, simplifying the model’s implementation. We illustrate the model’s application by extracting the optical constants from the transmission spectrum of a hydrogenated silicon nitride thin film.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"45 11","pages":"2146-2149"},"PeriodicalIF":4.1,"publicationDate":"2024-09-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142222886","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Two-step sequential deposition method has been widely used to fabricate high-performance FAPbI3-based perovskite solar cells (PSCs). However, fast reaction between FAI and PbI2 always leads to an incomplete reaction and poor crystal quality. Here, 1-ethyl-3-methylimidazolium trifluoroacetate (EMIMTFA) is added to the FAI precursor solution, so as to regulate the crystallization behavior and obtain high-quality FAPbI3 perovskite films. The EMIMTFA can chemically interact simultaneously with FAI and PbI2, which will slow down the crystallization process of the perovskite film, achieving enlarged grain size, enhanced orientation and minimized defects, as well as less PbI2 residue. As a result, the PSCs with EMIMTFA achieve a champion efficiency of 24.31%, maintaining 90% of their initial efficiency after 1000 h under dark conditions in a N2-filled glove box. This study provides an efficient dual-site crystallization regulation strategy for the growth of high-quality FAPbI3 films.
{"title":"Dual-Site Crystallization Regulation for Highly Efficient and Stable Perovskite Solar Cells","authors":"Jianing Xi;Yi Zhang;Hanxiao Gao;Zhuowei Li;Chunyu Liu;Wenbin Guo","doi":"10.1109/LED.2024.3458056","DOIUrl":"10.1109/LED.2024.3458056","url":null,"abstract":"Two-step sequential deposition method has been widely used to fabricate high-performance FAPbI3-based perovskite solar cells (PSCs). However, fast reaction between FAI and PbI2 always leads to an incomplete reaction and poor crystal quality. Here, 1-ethyl-3-methylimidazolium trifluoroacetate (EMIMTFA) is added to the FAI precursor solution, so as to regulate the crystallization behavior and obtain high-quality FAPbI3 perovskite films. The EMIMTFA can chemically interact simultaneously with FAI and PbI2, which will slow down the crystallization process of the perovskite film, achieving enlarged grain size, enhanced orientation and minimized defects, as well as less PbI2 residue. As a result, the PSCs with EMIMTFA achieve a champion efficiency of 24.31%, maintaining 90% of their initial efficiency after 1000 h under dark conditions in a N2-filled glove box. This study provides an efficient dual-site crystallization regulation strategy for the growth of high-quality FAPbI3 films.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"45 11","pages":"2154-2157"},"PeriodicalIF":4.1,"publicationDate":"2024-09-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142222885","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-10DOI: 10.1109/LED.2024.3456816
Yue Yang;Xumeng Zhang;Pei Chen;Lingli Cheng;Yanting Ding;Chao Li;Jie Yu;Qi Liu
Artificial neurons based on the Hodgkin-Huxley (H-H) models could mimic the richest firing patterns, showing great potential in building high-intelligent systems. Emerging devices, such as NbO2-based threshold-switching devices, exhibit more advantages in constructing H-H neuron circuits compared to conventional transistors. However, the on-chip integration of the memristive H-H neuron circuit remains unexplored, limiting its practical applications in hardware. Here, we design and fabricate a fully integrated memristive H-H neuron circuit and achieve all-or-nothing, refractory period, integrator, class 1 excitation, tonic spiking, subthreshold oscillation, tonic bursting, and mixed-mode firing behaviors. We also demonstrate the homeostatic plasticity based on integrated H-H neuron, specifically, the neuron increases threshold spontaneously when receiving an excessively strong input to avoid the superexcitation in the neuron. This work verifies the feasibility of building an integrated memristive H-H neuron and lays the foundation for building high-bionic neuromorphic systems.
{"title":"Fully Integrated Memristive Hodgkin-Huxley Neurons With Homeostatic Plasticity","authors":"Yue Yang;Xumeng Zhang;Pei Chen;Lingli Cheng;Yanting Ding;Chao Li;Jie Yu;Qi Liu","doi":"10.1109/LED.2024.3456816","DOIUrl":"10.1109/LED.2024.3456816","url":null,"abstract":"Artificial neurons based on the Hodgkin-Huxley (H-H) models could mimic the richest firing patterns, showing great potential in building high-intelligent systems. Emerging devices, such as NbO2-based threshold-switching devices, exhibit more advantages in constructing H-H neuron circuits compared to conventional transistors. However, the on-chip integration of the memristive H-H neuron circuit remains unexplored, limiting its practical applications in hardware. Here, we design and fabricate a fully integrated memristive H-H neuron circuit and achieve all-or-nothing, refractory period, integrator, class 1 excitation, tonic spiking, subthreshold oscillation, tonic bursting, and mixed-mode firing behaviors. We also demonstrate the homeostatic plasticity based on integrated H-H neuron, specifically, the neuron increases threshold spontaneously when receiving an excessively strong input to avoid the superexcitation in the neuron. This work verifies the feasibility of building an integrated memristive H-H neuron and lays the foundation for building high-bionic neuromorphic systems.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"45 11","pages":"2225-2228"},"PeriodicalIF":4.1,"publicationDate":"2024-09-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142222889","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-10DOI: 10.1109/LED.2024.3456861
Zuoxu Yu;Fan Yu;Yubo Li;Tingrui Huang;Yuzhen Zhang;Wenting Xu;Wangran Wu;Weifeng Sun
In this work, an oxide-semiconductor-based low dropout regulator (LDO) circuit with enhancement- (E-) and depletion-mode (D-mode) thin film transistors (TFTs) is demonstrated. The E-mode TFTs adopt IGZO as the active layer. The D-mode TFTs are achieved via the ITO/IGZO dual-layer channel with high field effect mobility of 32.7 cm2V−1s−1 and superior uniformity and stability. Its threshold voltage (Vth) generates a positive shift of only 0.22V after positive bias stress. Besides, the D-mode TFTs own a low temperature coefficient of −4.9 mV/°C for Vth, facilitating the design of voltage reference. Benefiting from the remarkable D-mode TFTs, the LDO shows excellent performance, including a line regulation of 0.2%/V, a low quiescent current of $7~mu $ A, and a load regulation of $180~mu $ V/ $mu $ A. It has a high power supply rejection ratio (PSRR) of up to 45 dB and a unit gain bandwidth of over 100 kHz.
{"title":"A Low-Dropout Regulator Integrated With E-mode IGZO and D-mode ITO/IGZO Dual Layer Thin Film Transistors With Superior Uniformity and Stability","authors":"Zuoxu Yu;Fan Yu;Yubo Li;Tingrui Huang;Yuzhen Zhang;Wenting Xu;Wangran Wu;Weifeng Sun","doi":"10.1109/LED.2024.3456861","DOIUrl":"10.1109/LED.2024.3456861","url":null,"abstract":"In this work, an oxide-semiconductor-based low dropout regulator (LDO) circuit with enhancement- (E-) and depletion-mode (D-mode) thin film transistors (TFTs) is demonstrated. The E-mode TFTs adopt IGZO as the active layer. The D-mode TFTs are achieved via the ITO/IGZO dual-layer channel with high field effect mobility of 32.7 cm2V−1s−1 and superior uniformity and stability. Its threshold voltage (Vth) generates a positive shift of only 0.22V after positive bias stress. Besides, the D-mode TFTs own a low temperature coefficient of −4.9 mV/°C for Vth, facilitating the design of voltage reference. Benefiting from the remarkable D-mode TFTs, the LDO shows excellent performance, including a line regulation of 0.2%/V, a low quiescent current of \u0000<inline-formula> <tex-math>$7~mu $ </tex-math></inline-formula>\u0000 A, and a load regulation of \u0000<inline-formula> <tex-math>$180~mu $ </tex-math></inline-formula>\u0000 V/\u0000<inline-formula> <tex-math>$mu $ </tex-math></inline-formula>\u0000 A. It has a high power supply rejection ratio (PSRR) of up to 45 dB and a unit gain bandwidth of over 100 kHz.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"45 11","pages":"2134-2137"},"PeriodicalIF":4.1,"publicationDate":"2024-09-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142222887","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-10DOI: 10.1109/LED.2024.3456036
Yuanpeng Wu;Yixin Xiao;Kai Sun;Jianyang Xiao;Bowen Tian;Ding Wang;Danhao Wang;Zetian Mi
Light-emitting devices with ultra-narrow linewidth have important applications in high-precision measurements and emerging quantum technologies. Charge carriers in solid-state matrix often suffer from interactions with phonons, spin noise and drifting electric fields, which results in spectral diffusion and additional phase noise. Here we report an ultra-narrow linewidth ( $sim 76 ; mu $ eV) electroluminescence from molecular nitrogen species in the ambience at room temperature. Through detailed numerical calculation and experimental analysis, we show that the second positive system of nitrogen species can be excited by tunneling electrons field-emitted from a metal-insulator-semiconductor heterostructure on commercially available Si and GaN substrates. The tunneling light-emitting devices (TLED) feature an excellent scalability and devices with minimal lateral dimension of $5 ; mu $ m have been demonstrated. This work sheds light on the integration of atomic, molecular, and optical physics with the solid-state platform as well as novel quantum optoelectronics.
具有超窄线宽的发光器件在高精度测量和新兴量子技术中有着重要的应用。固态矩阵中的电荷载流子通常会受到声子、自旋噪声和漂移电场的相互作用，从而导致光谱扩散和额外的相位噪声。在这里，我们报告了分子氮在室温环境中发出的超窄线宽（$sim 76 ; mu $ eV）电致发光。通过详细的数值计算和实验分析，我们发现氮分子的第二正向系统可以通过从商用硅和氮化镓衬底上的金属-绝缘体-半导体异质结构中发射的隧道电子激发。这种隧道发光器件（TLED）具有极佳的可扩展性，器件的最小横向尺寸为 5 ; mu $ m。这项工作揭示了原子、分子和光学物理与固态平台以及新型量子光电子学的整合。
{"title":"A Tunneling Light-Emitting Device With Ultra-Narrow Linewidth Emission at Room-Temperature","authors":"Yuanpeng Wu;Yixin Xiao;Kai Sun;Jianyang Xiao;Bowen Tian;Ding Wang;Danhao Wang;Zetian Mi","doi":"10.1109/LED.2024.3456036","DOIUrl":"10.1109/LED.2024.3456036","url":null,"abstract":"Light-emitting devices with ultra-narrow linewidth have important applications in high-precision measurements and emerging quantum technologies. Charge carriers in solid-state matrix often suffer from interactions with phonons, spin noise and drifting electric fields, which results in spectral diffusion and additional phase noise. Here we report an ultra-narrow linewidth (\u0000<inline-formula> <tex-math>$sim 76 ; mu $ </tex-math></inline-formula>\u0000eV) electroluminescence from molecular nitrogen species in the ambience at room temperature. Through detailed numerical calculation and experimental analysis, we show that the second positive system of nitrogen species can be excited by tunneling electrons field-emitted from a metal-insulator-semiconductor heterostructure on commercially available Si and GaN substrates. The tunneling light-emitting devices (TLED) feature an excellent scalability and devices with minimal lateral dimension of \u0000<inline-formula> <tex-math>$5 ; mu $ </tex-math></inline-formula>\u0000m have been demonstrated. This work sheds light on the integration of atomic, molecular, and optical physics with the solid-state platform as well as novel quantum optoelectronics.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"45 11","pages":"2138-2141"},"PeriodicalIF":4.1,"publicationDate":"2024-09-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142222888","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-09DOI: 10.1109/LED.2024.3449560
Liangjun Wang;Caifang Gao;Siyuan Ruan;Jialin Yang;Shanshan Liang;Chang Yang;Wenwu Li
Organic field-effect transistors (OFETs) are widely applied in the fields of flexible display and wearable devices. However, its mobility optimization is a major bottleneck. Here, enhanced mobility in organic dioctylbenzothienob en-zothiophene (C8-BTBT) OFETs is demonstrated with iodine doping. By optimizing the doping concentration, the carrier concentration at the metal/semiconductor interface markedly increases due to tunneling effects, generating a contact resistance (R $_{text {C}}text {)}$ reduced by $sim 10^{{2}}$ , and increasing mobility from 1.4 to 10.4 cm 2 V $^{-{1}}$ s $^{-{1}}$ . This work proposes an effective method to enhance the mobility of C8-BTBT OFETs.
{"title":"Enhanced Mobility in C8-BTBT Field-Effect Transistors With Iodine-Doping","authors":"Liangjun Wang;Caifang Gao;Siyuan Ruan;Jialin Yang;Shanshan Liang;Chang Yang;Wenwu Li","doi":"10.1109/LED.2024.3449560","DOIUrl":"10.1109/LED.2024.3449560","url":null,"abstract":"Organic field-effect transistors (OFETs) are widely applied in the fields of flexible display and wearable devices. However, its mobility optimization is a major bottleneck. Here, enhanced mobility in organic dioctylbenzothienob en-zothiophene (C8-BTBT) OFETs is demonstrated with iodine doping. By optimizing the doping concentration, the carrier concentration at the metal/semiconductor interface markedly increases due to tunneling effects, generating a contact resistance (R\u0000<inline-formula> <tex-math>$_{text {C}}text {)}$ </tex-math></inline-formula>\u0000 reduced by \u0000<inline-formula> <tex-math>$sim 10^{{2}}$ </tex-math></inline-formula>\u0000, and increasing mobility from 1.4 to 10.4 cm\u0000<sup>2</sup>\u0000V\u0000<inline-formula> <tex-math>$^{-{1}}$ </tex-math></inline-formula>\u0000s\u0000<inline-formula> <tex-math>$^{-{1}}$ </tex-math></inline-formula>\u0000. This work proposes an effective method to enhance the mobility of C8-BTBT OFETs.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"45 10","pages":"1949-1952"},"PeriodicalIF":4.1,"publicationDate":"2024-09-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142222900","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-09DOI: 10.1109/LED.2024.3456752
Hesham Okeil;Gerhard Wachutka
In this letter, we report on the first 4H-SiC based lateral magnetotransistor. The sensor is fabricated in a 4H-SiC wafer scale Bipolar-CMOS-DMOS (BCD) technology and exhibits high sensitivity to in-plane magnetic fields, reaching $960 ; mu $ A/T. We study its electrical and magnetic characteristics and measure the achievable magnetic field detectivity. A minimum noise-limited detectivity of 273 nT/ $sqrt {text {Hz}}$ is achieved. Using TCAD simulations, we study the underlying transduction mechanism and identify electron hole plasma modulation as the main operating principle.
{"title":"4H-SiC Lateral Magnetotransistor With Sub-Microtesla In-Plane Magnetic Field Detectivity","authors":"Hesham Okeil;Gerhard Wachutka","doi":"10.1109/LED.2024.3456752","DOIUrl":"10.1109/LED.2024.3456752","url":null,"abstract":"In this letter, we report on the first 4H-SiC based lateral magnetotransistor. The sensor is fabricated in a 4H-SiC wafer scale Bipolar-CMOS-DMOS (BCD) technology and exhibits high sensitivity to in-plane magnetic fields, reaching \u0000<inline-formula> <tex-math>$960 ; mu $ </tex-math></inline-formula>\u0000A/T. We study its electrical and magnetic characteristics and measure the achievable magnetic field detectivity. A minimum noise-limited detectivity of 273 nT/\u0000<inline-formula> <tex-math>$sqrt {text {Hz}}$ </tex-math></inline-formula>\u0000 is achieved. Using TCAD simulations, we study the underlying transduction mechanism and identify electron hole plasma modulation as the main operating principle.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"45 11","pages":"2173-2176"},"PeriodicalIF":4.1,"publicationDate":"2024-09-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10669586","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142222893","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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