This work investigates the threshold voltage ( ${V}_{text {th}}text {)}$ instability in Schottky-type p-GaN gate HEMTs subjected to positive/negative gate switching stress. Under the gate switching stress, a characteristic “M”-shaped ${V}_{text {th}}$ curve with elevated ${V}_{text {GS,ON}}$ is revealed. This pattern is ascribed to the competitive transport of electrons and holes. Considering the condition of reduced ${V}_{text {GS, OFF}}$ , an increasing ${V} _{text {th}}$ has also been observed, which is attributed to the curtailed electron emission while the promoted hole release. Further, with the increasing of the duty cycle, a positive ${V}_{text {th}}$ shift at the lower ${V}_{text {GS, ON}}$ and a negative shift at higher ${V}_{text {GS, ON}}$ are needs to be taken seriously, and it also confirm the competitive mechanism in the abnormal “M”-shaped ${V}_{text {th}}$ instability. The research highlights that the impact of positive/negative gate switching stress on ${V}_{text {th}}$ instability are significant and cannot be neglected.
{"title":"“M”-Shaped Threshold Voltage Shift Induced by Competitive Positive/Negative Gate Switching Stress in Schottky-Type p-GaN Gate HEMTs","authors":"Yunfeng Hu;Liang He;Meng Dong;Xinghuan Chen;Yijun Shi;Zhiyuan He;Zongqi Cai;Yiqiang Ni;Hongyue Wang;Zhizhe Wang;Yuan Li;Xiaoli Lu;Yuan Chen;Yiqiang Chen","doi":"10.1109/LED.2024.3480253","DOIUrl":"https://doi.org/10.1109/LED.2024.3480253","url":null,"abstract":"This work investigates the threshold voltage (\u0000<inline-formula> <tex-math>${V}_{text {th}}text {)}$ </tex-math></inline-formula>\u0000 instability in Schottky-type p-GaN gate HEMTs subjected to positive/negative gate switching stress. Under the gate switching stress, a characteristic “M”-shaped \u0000<inline-formula> <tex-math>${V}_{text {th}}$ </tex-math></inline-formula>\u0000 curve with elevated \u0000<inline-formula> <tex-math>${V}_{text {GS,ON}}$ </tex-math></inline-formula>\u0000 is revealed. This pattern is ascribed to the competitive transport of electrons and holes. Considering the condition of reduced \u0000<inline-formula> <tex-math>${V}_{text {GS, OFF}}$ </tex-math></inline-formula>\u0000, an increasing \u0000<inline-formula> <tex-math>${V} _{text {th}}$ </tex-math></inline-formula>\u0000 has also been observed, which is attributed to the curtailed electron emission while the promoted hole release. Further, with the increasing of the duty cycle, a positive \u0000<inline-formula> <tex-math>${V}_{text {th}}$ </tex-math></inline-formula>\u0000 shift at the lower \u0000<inline-formula> <tex-math>${V}_{text {GS, ON}}$ </tex-math></inline-formula>\u0000 and a negative shift at higher \u0000<inline-formula> <tex-math>${V}_{text {GS, ON}}$ </tex-math></inline-formula>\u0000 are needs to be taken seriously, and it also confirm the competitive mechanism in the abnormal “M”-shaped \u0000<inline-formula> <tex-math>${V}_{text {th}}$ </tex-math></inline-formula>\u0000 instability. The research highlights that the impact of positive/negative gate switching stress on \u0000<inline-formula> <tex-math>${V}_{text {th}}$ </tex-math></inline-formula>\u0000 instability are significant and cannot be neglected.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"45 12","pages":"2299-2302"},"PeriodicalIF":4.1,"publicationDate":"2024-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142761507","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-10-14DOI: 10.1109/LED.2024.3471172
Siwei Cui;Hui Yang;Dongping Wu
The reference-less semiconductor ion sensor (RELESIS) addresses pH sensing by eliminating the need for a reference electrode (RE), offering hope for miniaturized and on-chip integrated ion sensors. The key challenge in large scale preparation of RELESIS lies in fabricating a pair of differential sensitive films that can be formed using CMOS compatible process. In this work, differential sensitive films were fabricated through the transformation of a high sensitivity film into a low sensitivity film via carbon ion implantation. Carbon ion implantation effectively reduced the sensitivity of the HfO2 film, achieving a 89% decrease, from 48.93 mV/pH to 6.7 mV/pH. RELESIS was fabricated with HfO2 and carbon ion-implanted HfO2 films and demonstrated excellent pH performance, exhibiting a high sensitivity of 41.79 mV/pH. Microwave annealing (MWA) further enhanced the sensitivity of RELESIS to 44.71 mV/pH and decreasing the sensitivity degradation rate from 17% to 8.4% over a 20-day period.
{"title":"Carbon Ion Implantation-Modified Hafnium Oxide to Construct a RELESIS for pH Sensing","authors":"Siwei Cui;Hui Yang;Dongping Wu","doi":"10.1109/LED.2024.3471172","DOIUrl":"https://doi.org/10.1109/LED.2024.3471172","url":null,"abstract":"The reference-less semiconductor ion sensor (RELESIS) addresses pH sensing by eliminating the need for a reference electrode (RE), offering hope for miniaturized and on-chip integrated ion sensors. The key challenge in large scale preparation of RELESIS lies in fabricating a pair of differential sensitive films that can be formed using CMOS compatible process. In this work, differential sensitive films were fabricated through the transformation of a high sensitivity film into a low sensitivity film via carbon ion implantation. Carbon ion implantation effectively reduced the sensitivity of the HfO2 film, achieving a 89% decrease, from 48.93 mV/pH to 6.7 mV/pH. RELESIS was fabricated with HfO2 and carbon ion-implanted HfO2 films and demonstrated excellent pH performance, exhibiting a high sensitivity of 41.79 mV/pH. Microwave annealing (MWA) further enhanced the sensitivity of RELESIS to 44.71 mV/pH and decreasing the sensitivity degradation rate from 17% to 8.4% over a 20-day period.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"45 12","pages":"2522-2525"},"PeriodicalIF":4.1,"publicationDate":"2024-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142754249","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In this letter, 4H-SiC super-junction (SJ) Schottky diodes (SBDs) with hexagonal cell were fabricated by trench etching and epi-regrowth process. Quasi-selective epi-regrowth in hexagonal trenches and high aspect ratio of 6 for P-pillars without voids were achieved. Furthermore, a termination with field limiting ring assisted super-junction termination extension (RA-SJTE) was proposed and adopted to suppress the high electric field around the device edge. With such a termination, the breakdown voltage (BV) significantly increases from 1530 V to 4150 V (92% of the TCAD simulation value). The specific on-resistance ( ${R}_{text {ON,sp}}text {)}$ of the fabricated device is 4.6 m $Omega cdot $ cm2, demonstrating a performance higher than the one-dimensional limit of 4H-SiC unipolar devices. These results show the promising future of high-performance 4H-SiC SJ device for multi-kilovolts application.
采用沟槽刻蚀和外延再生工艺制备了具有六边形电池的4H-SiC超结肖特基二极管（SJ）。在六方沟槽中实现了准选择性外延再生，无孔洞p柱的长径比高达6。在此基础上，提出了一种限场环辅助超结终端延伸（RA-SJTE）方式来抑制器件边缘处的高电场。在这种终止下，击穿电压（BV）从1530 V显著增加到4150 V （TCAD仿真值的92%）。所制备器件的比导通电阻（${R}_{text {ON,sp}}text{）}$为4.6 m $Omega cdot $ cm2，性能高于4H-SiC单极器件的一维极限。这些结果显示了高性能多千伏4H-SiC SJ器件的良好前景。
{"title":"4.15 kV/4.6 mΩ⋅cm² 4H-SiC Epi-Refilled Super-Junction Schottky Diode With Ring Assisted Super-Junction Termination Extension","authors":"Haoyuan Cheng;Hengyu Wang;Ce Wang;Jiangbin Wan;Chi Zhang;Kuang Sheng","doi":"10.1109/LED.2024.3479886","DOIUrl":"https://doi.org/10.1109/LED.2024.3479886","url":null,"abstract":"In this letter, 4H-SiC super-junction (SJ) Schottky diodes (SBDs) with hexagonal cell were fabricated by trench etching and epi-regrowth process. Quasi-selective epi-regrowth in hexagonal trenches and high aspect ratio of 6 for P-pillars without voids were achieved. Furthermore, a termination with field limiting ring assisted super-junction termination extension (RA-SJTE) was proposed and adopted to suppress the high electric field around the device edge. With such a termination, the breakdown voltage (BV) significantly increases from 1530 V to 4150 V (92% of the TCAD simulation value). The specific on-resistance (\u0000<inline-formula> <tex-math>${R}_{text {ON,sp}}text {)}$ </tex-math></inline-formula>\u0000 of the fabricated device is 4.6 m\u0000<inline-formula> <tex-math>$Omega cdot $ </tex-math></inline-formula>\u0000cm2, demonstrating a performance higher than the one-dimensional limit of 4H-SiC unipolar devices. These results show the promising future of high-performance 4H-SiC SJ device for multi-kilovolts application.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"45 12","pages":"2311-2314"},"PeriodicalIF":4.1,"publicationDate":"2024-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142761504","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
We introduce a novel all-solid-state Mg-ion-based electrochemical RAM (Mg-ECRAM) that utilizes a highly stable MgF2 electrolyte known for its high ionic conductivity ( $sigma _{text {ion}}text {)}$ and low electrical conductivity ( $sigma text {)}$ . Additionally, crystalline WO $_{{2}.{8}}$ (C-WO $_{{2}.{8}}text {)}$ is used as the channel material because of its excellent ion diffusivity (D $_{text {ion}}text {)}$ . Comprehensively, our findings reveal nearly perfect weight update linearity and exceptional retention capabilities, lasting approximately six years. These results indicate that Mg-ions are suitable for ECRAM systems, offering desirable and dependable synaptic properties. Moreover, the physical intercalation of Mg-ions into the WO $_{{2}.{8}}$ channel is confirmed in real-time by the sequential modulation of Raman peaks, which correspond to the levels of potentiation or depression.
{"title":"Mg-Ion-Based Electrochemical Synapse With Superior Retention","authors":"Heebum Kang;Kyumin Lee;Seungkwon Hwang;Hyunsang Hwang","doi":"10.1109/LED.2024.3479248","DOIUrl":"https://doi.org/10.1109/LED.2024.3479248","url":null,"abstract":"We introduce a novel all-solid-state Mg-ion-based electrochemical RAM (Mg-ECRAM) that utilizes a highly stable MgF2 electrolyte known for its high ionic conductivity (\u0000<inline-formula> <tex-math>$sigma _{text {ion}}text {)}$ </tex-math></inline-formula>\u0000 and low electrical conductivity (\u0000<inline-formula> <tex-math>$sigma text {)}$ </tex-math></inline-formula>\u0000. Additionally, crystalline WO\u0000<inline-formula> <tex-math>$_{{2}.{8}}$ </tex-math></inline-formula>\u0000 (C-WO\u0000<inline-formula> <tex-math>$_{{2}.{8}}text {)}$ </tex-math></inline-formula>\u0000 is used as the channel material because of its excellent ion diffusivity (D\u0000<inline-formula> <tex-math>$_{text {ion}}text {)}$ </tex-math></inline-formula>\u0000. Comprehensively, our findings reveal nearly perfect weight update linearity and exceptional retention capabilities, lasting approximately six years. These results indicate that Mg-ions are suitable for ECRAM systems, offering desirable and dependable synaptic properties. Moreover, the physical intercalation of Mg-ions into the WO\u0000<inline-formula> <tex-math>$_{{2}.{8}}$ </tex-math></inline-formula>\u0000 channel is confirmed in real-time by the sequential modulation of Raman peaks, which correspond to the levels of potentiation or depression.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"45 12","pages":"2557-2560"},"PeriodicalIF":4.1,"publicationDate":"2024-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142754242","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-10-14DOI: 10.1109/LED.2024.3480361
Jiaxin Qin;Xinwei Cai;Huiling Pan;Tianwei Yang;Songyan Chen;Wei Huang;Guangyang Lin;Cheng Li
In this work, a low-cost and high-performance p-GaSe/i-GeSn/n-Ge-on-insulator van der Waals (vdW) heterojunction photodetector (PD) is demonstrated with a Sn-composition-graded i-GeSn absorption region. Featuring a sputtering-grown Ge0.848 Sn0.152 top layer, the PD extends its cutoff wavelength beyond 2400 nm, simultaneously boosting its response to visible (VIS) light. This enhancement is achieved through using wide bandgap GaSe flake as the p-type region, resulting in a flat broadband photo-response spectrum from VIS to short-wave infrared (SWIR) bands. Moreover, an ultralow dark current density of 0.55 mA/cm2 is achieved owing to the large bandgap of GaSe and graded barriers within the GeSn layers. The specific detectivity at 2000 nm reaches ${3.5}times {10}^{{10}}$ Jones, alongside a rapid response time of $49.5mu $ s under −1 V bias at room temperature. These outcomes highlight the potential of the mixed-dimensional GeSn vdW heterojunction PD as a new pathway for low-cost multispectral detection ranging from VIS to SWIR wavelengths.
{"title":"Low-Cost High-Performance p-GaSe/i-GeSn/n-GOI Heterojunction Photodiode for Visible to Short-Wave Infrared Multispectral Detection","authors":"Jiaxin Qin;Xinwei Cai;Huiling Pan;Tianwei Yang;Songyan Chen;Wei Huang;Guangyang Lin;Cheng Li","doi":"10.1109/LED.2024.3480361","DOIUrl":"https://doi.org/10.1109/LED.2024.3480361","url":null,"abstract":"In this work, a low-cost and high-performance p-GaSe/i-GeSn/n-Ge-on-insulator van der Waals (vdW) heterojunction photodetector (PD) is demonstrated with a Sn-composition-graded i-GeSn absorption region. Featuring a sputtering-grown Ge0.848 Sn0.152 top layer, the PD extends its cutoff wavelength beyond 2400 nm, simultaneously boosting its response to visible (VIS) light. This enhancement is achieved through using wide bandgap GaSe flake as the p-type region, resulting in a flat broadband photo-response spectrum from VIS to short-wave infrared (SWIR) bands. Moreover, an ultralow dark current density of 0.55 mA/cm2 is achieved owing to the large bandgap of GaSe and graded barriers within the GeSn layers. The specific detectivity at 2000 nm reaches \u0000<inline-formula> <tex-math>${3.5}times {10}^{{10}}$ </tex-math></inline-formula>\u0000 Jones, alongside a rapid response time of \u0000<inline-formula> <tex-math>$49.5mu $ </tex-math></inline-formula>\u0000s under −1 V bias at room temperature. These outcomes highlight the potential of the mixed-dimensional GeSn vdW heterojunction PD as a new pathway for low-cost multispectral detection ranging from VIS to SWIR wavelengths.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"45 12","pages":"2443-2446"},"PeriodicalIF":4.1,"publicationDate":"2024-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142736479","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-10-14DOI: 10.1109/LED.2024.3480123
Mohammad Masum Billah;Seongbok Kang;Jin Jang;Moath Alathbah
We investigate the electrical reliability of inverted staggered low-temperature poly-Si (LTPS) thin-film transistors (TFT) under direct and alternate current (DC and AC gate pulses) operations fabricated by blue laser diode annealing (BLDA). From scanning electron microscopy (SEM), and atomic force microscopy (AFM) images, smaller grain sizes (~70 nm) and smoother poly-Si surface (~1.18 nm) are achieved for solid-phase crystallization (SPC) by BLDA crystallization. However, partial melting (PM) of the silicon active layer exhibits a large grain size (~200 nm) with comparatively taller surface roughness (~7.73 nm). As compared to SPC devices, PM devices exhibit more electrical degradation including drain current (I $_{text {DS}}text {)}$ instability and threshold voltage shift ( $Delta $ V $_{text {Th}}text {)}$ under AC stress. Although, PM TFTs exhibit higher IDS, and field-effect mobility ( $mu _{text {FE}}text {)}$ , the protruded poly-Si layer causes severe carrier trapping/detrapping at grain boundary (GB) under AC stress. Besides, both the devices show stable electrical behavior under negative bias temperature stress (NBTS). We performed the technology computer-aided design (TCAD) simulation to validate the physical mechanism.
{"title":"Bottom-Gate Poly-Si Thin Film Transistors Fabricated by Blue Laser Diode Annealing and Their Reliability Under DC and AC Bias Stresses","authors":"Mohammad Masum Billah;Seongbok Kang;Jin Jang;Moath Alathbah","doi":"10.1109/LED.2024.3480123","DOIUrl":"https://doi.org/10.1109/LED.2024.3480123","url":null,"abstract":"We investigate the electrical reliability of inverted staggered low-temperature poly-Si (LTPS) thin-film transistors (TFT) under direct and alternate current (DC and AC gate pulses) operations fabricated by blue laser diode annealing (BLDA). From scanning electron microscopy (SEM), and atomic force microscopy (AFM) images, smaller grain sizes (~70 nm) and smoother poly-Si surface (~1.18 nm) are achieved for solid-phase crystallization (SPC) by BLDA crystallization. However, partial melting (PM) of the silicon active layer exhibits a large grain size (~200 nm) with comparatively taller surface roughness (~7.73 nm). As compared to SPC devices, PM devices exhibit more electrical degradation including drain current (I\u0000<inline-formula> <tex-math>$_{text {DS}}text {)}$ </tex-math></inline-formula>\u0000 instability and threshold voltage shift (\u0000<inline-formula> <tex-math>$Delta $ </tex-math></inline-formula>\u0000V\u0000<inline-formula> <tex-math>$_{text {Th}}text {)}$ </tex-math></inline-formula>\u0000 under AC stress. Although, PM TFTs exhibit higher IDS, and field-effect mobility (\u0000<inline-formula> <tex-math>$mu _{text {FE}}text {)}$ </tex-math></inline-formula>\u0000, the protruded poly-Si layer causes severe carrier trapping/detrapping at grain boundary (GB) under AC stress. Besides, both the devices show stable electrical behavior under negative bias temperature stress (NBTS). We performed the technology computer-aided design (TCAD) simulation to validate the physical mechanism.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"45 12","pages":"2415-2418"},"PeriodicalIF":4.1,"publicationDate":"2024-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142736658","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-10-11DOI: 10.1109/LED.2024.3478309
Yi Yang;Fujun Zhang;Yu Liu;Feng Jiang;Tingxuan Li;Kunyu Wang;Min Lu;Yuan Zhong;Xiaomei Chai;Zhennan Wu;Yu Zhang;Xue Bai
Metal nanoclusters (NCs) with a metal core consisting of a few to hundreds of metal atoms that are protected by organic ligands, can be regarded as the candidate materials for the emission material of the light-emitting diode (LED), due to their excellent properties, such as high electrical conductivity, high photoluminescence quantum yield, and good solution processability, etc. However, unbalanced carrier transport, inadequate energy transfer, and poor film-forming quality hinder the development of NC-based LEDs (NC-LEDs). In this regard, we employed a multiple host system composed of an exciplex system with electron transport material 2,2’-(1,3-Phenylene)-bis[5-(4-tert-butylphenyl)-1,3,4-oxadiazole] (OXD-7), providing an efficient energy transfer, constructing the flatness films, and balancing carrier transport. As a result, the modified NC-LED achieved a maximum brightness of 4932 cd m−2 and a peak external quantum efficiency (EQE) of 5.29%.
金属纳米团簇（NCs）具有高导电性、高光致发光量子产率、良好的溶液加工性等优异的性能，其金属核由几个到几百个金属原子组成，并受到有机配体的保护，可作为发光二极管（LED）发射材料的候选材料。然而，载流子输运不平衡、能量传递不充分、成膜质量差等问题阻碍了nc基led （NC-LEDs）的发展。在这方面，我们采用了由电子传输材料2,2 ' -（1,3-苯基）-双[5-（4-叔丁基苯基）-1,3,4-恶二唑]（OXD-7）组成的激合体系组成的多宿主体系，提供了有效的能量传递，构建了平面膜，并平衡了载流子传输。结果表明，改进后的NC-LED的最大亮度为4932 cd m−2，峰值外量子效率（EQE）为5.29%。
{"title":"Multiple Host Materials Engineering Boosts the Light-Emitting Diodes Performance of Metal Nanocluster","authors":"Yi Yang;Fujun Zhang;Yu Liu;Feng Jiang;Tingxuan Li;Kunyu Wang;Min Lu;Yuan Zhong;Xiaomei Chai;Zhennan Wu;Yu Zhang;Xue Bai","doi":"10.1109/LED.2024.3478309","DOIUrl":"https://doi.org/10.1109/LED.2024.3478309","url":null,"abstract":"Metal nanoclusters (NCs) with a metal core consisting of a few to hundreds of metal atoms that are protected by organic ligands, can be regarded as the candidate materials for the emission material of the light-emitting diode (LED), due to their excellent properties, such as high electrical conductivity, high photoluminescence quantum yield, and good solution processability, etc. However, unbalanced carrier transport, inadequate energy transfer, and poor film-forming quality hinder the development of NC-based LEDs (NC-LEDs). In this regard, we employed a multiple host system composed of an exciplex system with electron transport material 2,2’-(1,3-Phenylene)-bis[5-(4-tert-butylphenyl)-1,3,4-oxadiazole] (OXD-7), providing an efficient energy transfer, constructing the flatness films, and balancing carrier transport. As a result, the modified NC-LED achieved a maximum brightness of 4932 cd m−2 and a peak external quantum efficiency (EQE) of 5.29%.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"45 12","pages":"2467-2470"},"PeriodicalIF":4.1,"publicationDate":"2024-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142753803","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-10-11DOI: 10.1109/LED.2024.3478316
Kun Wang;Sizhe Li;Liwei Ji;Jiaxian Wan;Zexin Tu;Hao Wu;Chang Liu
High-performance ZnO thin-film transistors (TFTs) with Hf $_{{0}.{5}}$ Zr $_{{0}.{5}}$ O2 (HZO)-based ferroelectric gates have been designed and fabricated. In order to increase the thickness of HZO without sacrificing their ferroelectric properties and reducing the leakage current of the devices, multilayer nanolaminate structure was designed, which allows the HZO dielectric layer to still have a high remnant polarization ( $2{P}_{text {r}}= 50.2~mu $ C/cm $^{{2}}text {)}$ at a thickness of 30 nm. By introducing multilayer nanolaminate HZO film, the devices exhibit excellent performance, including an ultralow subthreshold swing (SS) of 96.4 mV/dec at room temperature, which is only 47% of the SS of conventional TFTs under the same process conditions, a large ${I}_{text {ON}}$ / ${I}_{text {OFF}}$ ratio of $10^{{8}}$ , a high field-effect mobility of 16.3 cm2V $^{-{1}}$ s $^{-{1}}$ and a proper threshold voltage of 0.5 V. Our results demonstrate the feasibility of augmenting switching speed and reducing the power consumption of ZnO TFTs by introducing HZO ferroelectric gates.
{"title":"Atomic Layer Deposited ZnO Negative Capacitance Thin-Film Transistors With Hf0.5Zr0.5O2-Based Ferroelectric Gates","authors":"Kun Wang;Sizhe Li;Liwei Ji;Jiaxian Wan;Zexin Tu;Hao Wu;Chang Liu","doi":"10.1109/LED.2024.3478316","DOIUrl":"https://doi.org/10.1109/LED.2024.3478316","url":null,"abstract":"High-performance ZnO thin-film transistors (TFTs) with Hf\u0000<inline-formula> <tex-math>$_{{0}.{5}}$ </tex-math></inline-formula>\u0000Zr\u0000<inline-formula> <tex-math>$_{{0}.{5}}$ </tex-math></inline-formula>\u0000O2 (HZO)-based ferroelectric gates have been designed and fabricated. In order to increase the thickness of HZO without sacrificing their ferroelectric properties and reducing the leakage current of the devices, multilayer nanolaminate structure was designed, which allows the HZO dielectric layer to still have a high remnant polarization (\u0000<inline-formula> <tex-math>$2{P}_{text {r}}= 50.2~mu $ </tex-math></inline-formula>\u0000C/cm\u0000<inline-formula> <tex-math>$^{{2}}text {)}$ </tex-math></inline-formula>\u0000 at a thickness of 30 nm. By introducing multilayer nanolaminate HZO film, the devices exhibit excellent performance, including an ultralow subthreshold swing (SS) of 96.4 mV/dec at room temperature, which is only 47% of the SS of conventional TFTs under the same process conditions, a large \u0000<inline-formula> <tex-math>${I}_{text {ON}}$ </tex-math></inline-formula>\u0000/\u0000<inline-formula> <tex-math>${I}_{text {OFF}}$ </tex-math></inline-formula>\u0000 ratio of \u0000<inline-formula> <tex-math>$10^{{8}}$ </tex-math></inline-formula>\u0000, a high field-effect mobility of 16.3 cm2V\u0000<inline-formula> <tex-math>$^{-{1}}$ </tex-math></inline-formula>\u0000s\u0000<inline-formula> <tex-math>$^{-{1}}$ </tex-math></inline-formula>\u0000 and a proper threshold voltage of 0.5 V. Our results demonstrate the feasibility of augmenting switching speed and reducing the power consumption of ZnO TFTs by introducing HZO ferroelectric gates.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"45 12","pages":"2399-2402"},"PeriodicalIF":4.1,"publicationDate":"2024-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142736312","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-10-11DOI: 10.1109/LED.2024.3478777
Seyeoul Kwon;Charles Andrew Parker;Kristofer Paetow;Hunter Reed;Sara Chahid;Geun Jo Han;Agus Widjaja;Jinhui Cho;Kevin Cadena;Kevin Granaas;Jerome Crocco
This letter presents the development of a flexible digital X-ray imaging detector based on flat panel display manufacturing principles. The detector array was fabricated using amorphous silicon thin-film transistors (a-Si TFTs) on flexible polyimide (PI) substrate. The TFT characteristics of the flexible detector array show comparable performance to the glass substrate detector array. The field effect mobility ( $mu $ ) of a-Si TFT on flexible substrate was 0.66 cm2/V $cdot $ s, the thresholder voltage (VT) was 4.21 V, the subthreshold slops (SS) was 0.42 V/decade, and the off-current (IOFF) was about $6.5times 10^{-{14}}$ A. The X-ray image was 161 mm $times$ 215 mm in size. The environmental reliability of the flexible detector were tested using thermal and conditions of 65°C at a relative humidity (RH) of 70%. Furthermore, temperature cycling between −20°C/+60°C was used to test the flexible detectors and which also shown acceptable passing results for commercialization. The preliminary studying results demonstrate the feasibility of a flexible X-ray imaging detector, which could have significant implications for the medical imaging industry.
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This work utilized the glancing angle deposition (GLAD) method to grow an Al2O3 nanowires (NW) device and an Ag nanoparticles (NP) textured Al2O3 NW device on an n-Si substrate. The growth of the proposed nanostructures is facilitated by virtue of the shadowing effect of the GLAD process. The polycrystalline crystal structure was determined through independent crystallographic investigations. After Ag NP texturing on Al2O3 NW, an improvement in optical absorption and Raman emission was observed. Ag texturing on Al2O3 NW considerably improved the most important photodetection parameters, including photosensitivity, responsivity, quantum efficiency, detectivity, and noise equivalent of power (NEP). This overall improvement in the photodetection parameters is primarily due to the enhancement in the photocurrent by localized surface plasmon resonance (LSPR) exhibited by Ag NP. The proposed device with Ag NP also exhibited an ultrafast photo response. Therefore, the finding reveals that the Ag NP textured Al2O3 NW device is a feasible option for high-speed photodetection applications.
这项研究利用闪烁角沉积（GLAD）方法，在正硅衬底上生长出 Al2O3 纳米线（NW）器件和银纳米粒子（NP）纹理 Al2O3 NW 器件。GLAD 工艺的阴影效应促进了拟议纳米结构的生长。通过独立的晶体学研究确定了多晶晶体结构。在 Al2O3 NW 上制备 Ag NP 后，观察到其光学吸收和拉曼发射均有所改善。在 Al2O3 NW 上进行银制备大大提高了最重要的光检测参数，包括光敏度、响应度、量子效率、检测度和噪声功率等效（NEP）。光检测参数的整体改善主要归功于 Ag NP 通过局部表面等离子体共振（LSPR）增强了光电流。使用 Ag NP 的拟议器件还表现出了超快的光响应。因此，研究结果表明，Ag NP 纹理的 Al2O3 NW 器件是高速光电检测应用的可行选择。
{"title":"Effect of Ag Nanoparticle Texturing on Al₂O₃ Nanowires for Improved Photodetection","authors":"Abhijit Das;Avijit Dalal;Aniruddha Mondal;Laishram Robindro Singh;Mitra Barun Sarkar","doi":"10.1109/LED.2024.3478387","DOIUrl":"https://doi.org/10.1109/LED.2024.3478387","url":null,"abstract":"This work utilized the glancing angle deposition (GLAD) method to grow an Al2O3 nanowires (NW) device and an Ag nanoparticles (NP) textured Al2O3 NW device on an n-Si substrate. The growth of the proposed nanostructures is facilitated by virtue of the shadowing effect of the GLAD process. The polycrystalline crystal structure was determined through independent crystallographic investigations. After Ag NP texturing on Al2O3 NW, an improvement in optical absorption and Raman emission was observed. Ag texturing on Al2O3 NW considerably improved the most important photodetection parameters, including photosensitivity, responsivity, quantum efficiency, detectivity, and noise equivalent of power (NEP). This overall improvement in the photodetection parameters is primarily due to the enhancement in the photocurrent by localized surface plasmon resonance (LSPR) exhibited by Ag NP. The proposed device with Ag NP also exhibited an ultrafast photo response. Therefore, the finding reveals that the Ag NP textured Al2O3 NW device is a feasible option for high-speed photodetection applications.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"45 12","pages":"2435-2438"},"PeriodicalIF":4.1,"publicationDate":"2024-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142736481","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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