This letter focuses on the 1/f noise induced by a photocurrent in infrared (IR) detectors based on the AIIIBV InAs/GaSb, and InAs/InAsSb type-II superlattices (T2SLs) optimized for mid-, or long-wavelength range. The relative photocurrent 1/f noise $alpha _{textit {ph}}approx {3}times {10}^{-{11}}$ and $alpha _{textit {ph}}approx {7}times {10}^{-{11}}$ were found for detectors based on InAs/GaSb and InAs/InAsSb T2SLs, respectively. It was shown that the dark current generates $1/{f}$ noise much more efficiently than the photocurrent in all detectors. The lowest relative dark current 1/f noise $alpha _{d}approx {4}times {10}^{-{8}}$ was obtained for interband cascade InAs/InAsSb T2SL detectors. The correlation between the photocurrent and the dark current 1/f noises was extracted, suggesting that both components partially origin the same source.
{"title":"Photocurrent-Induced 1/f Noise in AIIIBV T2SLs Infrared Detectors","authors":"Łukasz Ciura;Karol Dabrowski;Krystian Michalczewski;Łukasz Kubiszyn;Bartłomiej Seredyński;Waldemar Gawron;Kinga Majkowycz;Piotr Martyniuk","doi":"10.1109/LED.2024.3522363","DOIUrl":"https://doi.org/10.1109/LED.2024.3522363","url":null,"abstract":"This letter focuses on the 1/f noise induced by a photocurrent in infrared (IR) detectors based on the AIIIBV InAs/GaSb, and InAs/InAsSb type-II superlattices (T2SLs) optimized for mid-, or long-wavelength range. The relative photocurrent 1/f noise <inline-formula> <tex-math>$alpha _{textit {ph}}approx {3}times {10}^{-{11}}$ </tex-math></inline-formula> and <inline-formula> <tex-math>$alpha _{textit {ph}}approx {7}times {10}^{-{11}}$ </tex-math></inline-formula> were found for detectors based on InAs/GaSb and InAs/InAsSb T2SLs, respectively. It was shown that the dark current generates <inline-formula> <tex-math>$1/{f}$ </tex-math></inline-formula> noise much more efficiently than the photocurrent in all detectors. The lowest relative dark current 1/f noise <inline-formula> <tex-math>$alpha _{d}approx {4}times {10}^{-{8}}$ </tex-math></inline-formula> was obtained for interband cascade InAs/InAsSb T2SL detectors. The correlation between the photocurrent and the dark current 1/f noises was extracted, suggesting that both components partially origin the same source.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 2","pages":"155-158"},"PeriodicalIF":4.1,"publicationDate":"2024-12-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143184497","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Ternary copper halide CsCu$_{mathbf {{2}}}$ I$_{mathbf {{3}}}$ emerges as a highly promising candidate for eco-friendly light-emitting diodes (LEDs), but the electroluminescent performance is limited by defect-related nonradiative losses and disordered crystallization. Herein, we develop a potassium iodide (KI)-modified engineering of CsCu$_{mathbf {{2}}}$ I$_{mathbf {{3}}}$ emitters to passivate the defects by compensating for any halide vacancies, and reduce trap state density. Meanwhile, this strategy can optimize the crystallization process of CsCu$_{mathbf {{2}}}$ I$_{mathbf {{3}}}$ to obtain continuous high-quality CsCu$_{mathbf {{2}}}$ I$_{mathbf {{3}}}$ films, which is conductive to suppressing leakage current of corresponding devices. Benefitting from the suppression of nonradiative recombination due to the reduced halide vacancies, and improved film morphology of CsCu$_{mathbf {{2}}}$ I$_{mathbf {{3}}}$ by optimizing the crystallization process of CsCu$_{mathbf {{2}}}$ I$_{mathbf {{3}}}$ , the EQE of corresponding LED is largely improved from 0.02% to 0.065%. The results highlight the great potential of KI passivation for high performance eco-friendly CsCu $_{mathbf {{2}}}$ I$_{mathbf {{3}}}$ based LED.
{"title":"Potassium Iodide Passivation Enabling Performance Improvement of CsCu₂I₃-Based LEDs","authors":"Lixi Wang;Yujie Qin;Zhenghao Gao;Yuyang Wei;Ziyang Liu;Lei Mao;Xiuwei Huo;Jia Lu;Haitao Liu;Chengjun Liu;Fan Fang;Jing Chen;Yunkang Cui;Jianhua Chang;Yuning Zhang;Jiangyong Pan","doi":"10.1109/LED.2024.3520140","DOIUrl":"https://doi.org/10.1109/LED.2024.3520140","url":null,"abstract":"Ternary copper halide CsCu<inline-formula> <tex-math>$_{mathbf {{2}}}$ </tex-math></inline-formula>I<inline-formula> <tex-math>$_{mathbf {{3}}}$ </tex-math></inline-formula> emerges as a highly promising candidate for eco-friendly light-emitting diodes (LEDs), but the electroluminescent performance is limited by defect-related nonradiative losses and disordered crystallization. Herein, we develop a potassium iodide (KI)-modified engineering of CsCu<inline-formula> <tex-math>$_{mathbf {{2}}}$ </tex-math></inline-formula>I<inline-formula> <tex-math>$_{mathbf {{3}}}$ </tex-math></inline-formula> emitters to passivate the defects by compensating for any halide vacancies, and reduce trap state density. Meanwhile, this strategy can optimize the crystallization process of CsCu<inline-formula> <tex-math>$_{mathbf {{2}}}$ </tex-math></inline-formula>I<inline-formula> <tex-math>$_{mathbf {{3}}}$ </tex-math></inline-formula> to obtain continuous high-quality CsCu<inline-formula> <tex-math>$_{mathbf {{2}}}$ </tex-math></inline-formula>I<inline-formula> <tex-math>$_{mathbf {{3}}}$ </tex-math></inline-formula> films, which is conductive to suppressing leakage current of corresponding devices. Benefitting from the suppression of nonradiative recombination due to the reduced halide vacancies, and improved film morphology of CsCu<inline-formula> <tex-math>$_{mathbf {{2}}}$ </tex-math></inline-formula>I<inline-formula> <tex-math>$_{mathbf {{3}}}$ </tex-math></inline-formula> by optimizing the crystallization process of CsCu<inline-formula> <tex-math>$_{mathbf {{2}}}$ </tex-math></inline-formula>I<inline-formula> <tex-math>$_{mathbf {{3}}}$ </tex-math></inline-formula>, the EQE of corresponding LED is largely improved from 0.02% to 0.065%. The results highlight the great potential of KI passivation for high performance eco-friendly CsCu <inline-formula> <tex-math>$_{mathbf {{2}}}$ </tex-math></inline-formula>I<inline-formula> <tex-math>$_{mathbf {{3}}}$ </tex-math></inline-formula> based LED.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 2","pages":"211-214"},"PeriodicalIF":4.1,"publicationDate":"2024-12-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143184508","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Compact, accurate, and durable thermal neutron detectors utilizing ultra-wide bandgap semiconductors, such as gallium oxide (Ga2O$_{{3}}text {)}$ and diamond, hold great promise for the safe and long-term near-core monitoring of nuclear reactors in harsh environments. However, achieving low device leakage and efficient neutron detection remains a significant challenge. In this work, we demonstrate the first thermal neutron detector based on a large-area (9 mm$^{{2}}text {)}$ p-NiO/$beta $ -Ga2O3 heterojunction diode. The device benefits from a low interfacial trap density, as demonstrated by the slight capacitance-frequency dispersion and low 1/f noise-equivalent power, resulting in an ultralow leakage current of $10^{-{8}}$ A (at −200 V). Consequently, it exhibits efficient charge collection efficiency for alpha particles (5.486 MeV) with an energy resolution of 10%. By integrating 10B film for neutron conversion, we achieved an intrinsic neutron detection efficiency of 0.82%, which approaches the predicted value from the Monte Carlo method, corresponding to 2.22% for thermal neutrons. These findings underscore the potential of $beta $ -Ga2O3 for applications in advanced radiation monitoring.
{"title":"Demonstration of β-Ga2O3-Based Thermal Neutron Detector","authors":"Xiangdong Meng;Xinyi Pei;Yuncheng Han;Na Sun;Zhaoxuan Fang;Lei Ren;Rui Zhang;Lianxin Zhang;Fang-Fang Ren;Song Feng;Dan Xiao;Size Chen;Taosheng Li;Shulin Gu;Rong Zhang;Jiandong Ye","doi":"10.1109/LED.2024.3522482","DOIUrl":"https://doi.org/10.1109/LED.2024.3522482","url":null,"abstract":"Compact, accurate, and durable thermal neutron detectors utilizing ultra-wide bandgap semiconductors, such as gallium oxide (Ga2O<inline-formula> <tex-math>$_{{3}}text {)}$ </tex-math></inline-formula> and diamond, hold great promise for the safe and long-term near-core monitoring of nuclear reactors in harsh environments. However, achieving low device leakage and efficient neutron detection remains a significant challenge. In this work, we demonstrate the first thermal neutron detector based on a large-area (9 mm<inline-formula> <tex-math>$^{{2}}text {)}$ </tex-math></inline-formula> p-NiO/<inline-formula> <tex-math>$beta $ </tex-math></inline-formula>-Ga2O3 heterojunction diode. The device benefits from a low interfacial trap density, as demonstrated by the slight capacitance-frequency dispersion and low 1/f noise-equivalent power, resulting in an ultralow leakage current of <inline-formula> <tex-math>$10^{-{8}}$ </tex-math></inline-formula> A (at −200 V). Consequently, it exhibits efficient charge collection efficiency for alpha particles (5.486 MeV) with an energy resolution of 10%. By integrating 10B film for neutron conversion, we achieved an intrinsic neutron detection efficiency of 0.82%, which approaches the predicted value from the Monte Carlo method, corresponding to 2.22% for thermal neutrons. These findings underscore the potential of <inline-formula> <tex-math>$beta $ </tex-math></inline-formula>-Ga2O3 for applications in advanced radiation monitoring.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 2","pages":"187-190"},"PeriodicalIF":4.1,"publicationDate":"2024-12-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143184527","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-12-24DOI: 10.1109/LED.2024.3522184
Zhong Ren;Yi Shu;Ciaran T. Lennon;Harm Knoops;Russ Renzas;Robert H. Hadfield;Mike Cooke
Superconducting through silicon vias are emerging as a key interconnect technology to realise a scalable superconducting quantum computing platform. Integration of semiconductor technology into quantum devices is becoming more common whilst quantum devices are taking advantage of novel combinations of plasma processes and materials to realise more qubits and denser integration. In this letter, plasma processes for fabrication of superconducting niobium nitride TSVs have been developed by means of deep silicon etching, plasma polishing and atomic layer deposition. Key steps were experimentally investigated for their impact on etching and deposition results. The underlying mechanisms have been analysed to optimise the whole process flow. Sidewall topography significantly influenced conformality of niobium nitride deposition into deep features. As a result, high-quality vertical superconducting through silicon vias were obtained with a transition temperature of 10.7 K.
{"title":"Plasma Processes for Vertical Niobium Nitride Superconducting Through Silicon Vias","authors":"Zhong Ren;Yi Shu;Ciaran T. Lennon;Harm Knoops;Russ Renzas;Robert H. Hadfield;Mike Cooke","doi":"10.1109/LED.2024.3522184","DOIUrl":"https://doi.org/10.1109/LED.2024.3522184","url":null,"abstract":"Superconducting through silicon vias are emerging as a key interconnect technology to realise a scalable superconducting quantum computing platform. Integration of semiconductor technology into quantum devices is becoming more common whilst quantum devices are taking advantage of novel combinations of plasma processes and materials to realise more qubits and denser integration. In this letter, plasma processes for fabrication of superconducting niobium nitride TSVs have been developed by means of deep silicon etching, plasma polishing and atomic layer deposition. Key steps were experimentally investigated for their impact on etching and deposition results. The underlying mechanisms have been analysed to optimise the whole process flow. Sidewall topography significantly influenced conformality of niobium nitride deposition into deep features. As a result, high-quality vertical superconducting through silicon vias were obtained with a transition temperature of 10.7 K.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 2","pages":"175-178"},"PeriodicalIF":4.1,"publicationDate":"2024-12-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143184494","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-12-24DOI: 10.1109/LED.2024.3522150
Chenye Zhang;Shiyan Ma;Yang Yang;Kailin Li;Xianfeng Liang;Haifeng Gao;Jinghong Guo;Tianling Ren;Tianxiang Nan
Magnetic field tunable surface acoustic wave (SAW) devices are promising candidates for frequency tunable applications such as tunable acoustic filters, magnetic field sensors, and quantum acoustic devices. However, achieving practical levels of tunability remains a significant challenge. We enhance the tunability by introducing a magneto-acoustic waveguide design that concentrates acoustic energy within a magnetostrictive layer with low acoustic velocity, thereby amplifying the delta-E effect and enhancing its impact on SAW propagation. Using a 128°Y-X cut LiNbO3/SiO2/Fe$_{{70}.{4}}$ Ga$_{{17}.{6}}$ B12 (FeGaB) structure, we demonstrate that the tunability correlates with the thickness of FeGaB, consistent with our simulation results. The device with a 670 nm thick FeGaB magneto-acoustic waveguide achieves a maximum frequency shift of 5.134 MHz, corresponding to a tunability of 1.23%. These results underscore the efficacy of the magneto-acoustic waveguide approach in significantly enhancing the tunability of magnetic SAW devices, offering a viable path toward more practical tunable microwave components.
{"title":"Tunable Surface Acoustic Wave Resonator Based on Magneto-Acoustic Waveguide","authors":"Chenye Zhang;Shiyan Ma;Yang Yang;Kailin Li;Xianfeng Liang;Haifeng Gao;Jinghong Guo;Tianling Ren;Tianxiang Nan","doi":"10.1109/LED.2024.3522150","DOIUrl":"https://doi.org/10.1109/LED.2024.3522150","url":null,"abstract":"Magnetic field tunable surface acoustic wave (SAW) devices are promising candidates for frequency tunable applications such as tunable acoustic filters, magnetic field sensors, and quantum acoustic devices. However, achieving practical levels of tunability remains a significant challenge. We enhance the tunability by introducing a magneto-acoustic waveguide design that concentrates acoustic energy within a magnetostrictive layer with low acoustic velocity, thereby amplifying the delta-E effect and enhancing its impact on SAW propagation. Using a 128°Y-X cut LiNbO3/SiO2/Fe<inline-formula> <tex-math>$_{{70}.{4}}$ </tex-math></inline-formula>Ga<inline-formula> <tex-math>$_{{17}.{6}}$ </tex-math></inline-formula>B12 (FeGaB) structure, we demonstrate that the tunability correlates with the thickness of FeGaB, consistent with our simulation results. The device with a 670 nm thick FeGaB magneto-acoustic waveguide achieves a maximum frequency shift of 5.134 MHz, corresponding to a tunability of 1.23%. These results underscore the efficacy of the magneto-acoustic waveguide approach in significantly enhancing the tunability of magnetic SAW devices, offering a viable path toward more practical tunable microwave components.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 2","pages":"250-253"},"PeriodicalIF":4.1,"publicationDate":"2024-12-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143361433","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In this work, an enhancement-mode (E-mode) p-channel GaN metal-oxide-semiconductor field-effect transistor (p-MOSFET) with a maximum ON-state current (${I}_{text {ON}}$ ) density of 10.5 mA/mm, threshold voltage (${V}_{text {TH}}$ ) of −2.45 V, and ${I}_{text {ON}}/{I}_{text {OFF}}$ ratio of $10^{{8}}$ is demonstrated on a commercial GaN wafer designed on a p-GaN HEMT. Furthermore, we present a novel E-mode p-FET featuring an AlN insertion layer within the p-GaN layer. The AlN layer introduces extra capacitance in the conducting channel and decreases the body factor m of devices. The p-GaN/AlN/p-GaN/AlGaN structure reduces the equivalent channel capacitance, achieving a minimum point-by-point subthreshold swing (SS) of 60 mV/dec. Compared with that of the conventional p-GaN channel FET, the SS decreases from 225 to 105 mV/dec over three orders, the ${V}_{text {TH}}$ shifts to −3.05 V, the ${I}_{text {ON}}/{I}_{text {OFF}}$ ratio increases to $2 times 10^{{8}}$ , and the device also has an ultralow off-state leakage current in the range of $10 ; ^{-{8}}$ mA/mm. The proposed structure is compelling for GaN-based complementary metal-oxide-semiconductor (CMOS) logic and power devices.
{"title":"Novel Enhancement-Mode p-Channel GaN MOSFETs With an AlN Insert Layer","authors":"Hai Huang;Maolin Pan;Qiang Wang;Xinling Xie;Yannan Yang;Xin Hu;Luyu Wang;Penghao Zhang;Min Xu;David Wei Zhang","doi":"10.1109/LED.2024.3521276","DOIUrl":"https://doi.org/10.1109/LED.2024.3521276","url":null,"abstract":"In this work, an enhancement-mode (E-mode) p-channel GaN metal-oxide-semiconductor field-effect transistor (p-MOSFET) with a maximum ON-state current (<inline-formula> <tex-math>${I}_{text {ON}}$ </tex-math></inline-formula>) density of 10.5 mA/mm, threshold voltage (<inline-formula> <tex-math>${V}_{text {TH}}$ </tex-math></inline-formula>) of −2.45 V, and <inline-formula> <tex-math>${I}_{text {ON}}/{I}_{text {OFF}}$ </tex-math></inline-formula> ratio of <inline-formula> <tex-math>$10^{{8}}$ </tex-math></inline-formula> is demonstrated on a commercial GaN wafer designed on a p-GaN HEMT. Furthermore, we present a novel E-mode p-FET featuring an AlN insertion layer within the p-GaN layer. The AlN layer introduces extra capacitance in the conducting channel and decreases the body factor m of devices. The p-GaN/AlN/p-GaN/AlGaN structure reduces the equivalent channel capacitance, achieving a minimum point-by-point subthreshold swing (SS) of 60 mV/dec. Compared with that of the conventional p-GaN channel FET, the SS decreases from 225 to 105 mV/dec over three orders, the <inline-formula> <tex-math>${V}_{text {TH}}$ </tex-math></inline-formula> shifts to −3.05 V, the <inline-formula> <tex-math>${I}_{text {ON}}/{I}_{text {OFF}}$ </tex-math></inline-formula> ratio increases to <inline-formula> <tex-math>$2 times 10^{{8}}$ </tex-math></inline-formula>, and the device also has an ultralow off-state leakage current in the range of <inline-formula> <tex-math>$10 ; ^{-{8}}$ </tex-math></inline-formula> mA/mm. The proposed structure is compelling for GaN-based complementary metal-oxide-semiconductor (CMOS) logic and power devices.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 2","pages":"159-162"},"PeriodicalIF":4.1,"publicationDate":"2024-12-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143184491","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-12-23DOI: 10.1109/LED.2024.3521117
V. Thary;C. Algani;P. Chevalier;J.-L. Polleux
This letter presents performances of Si/SiGe heterojunction bipolar phototransistors (HPT) used for microwave photonics communication receiver link around 850nm. SiGe phototransistors are designed in an industrial 55-nm SiGe BiCMOS from STMicroelectronics without any change in the layers technology process. Different horizontal geometries of HPTs and biasing techniques were evaluated. The static responsivity of a $20times 20~ {mu }$ m2 optical window HPT reached 20.7 A/W at 900nm. This is the highest static responsivities reported for a fully-integrated Si/SiGe HPT with vertical illumination. A 1.6-GHz bandwidth for a 10.5-A/W static responsivity was achieved for a $5times 5 {mu }$ m2 optical window HPT using current bias.
{"title":"Low-Cost and Low-Voltage Si/SiGe Phototransistor With High Responsivity at 900nm for Microwave Photonics Applications","authors":"V. Thary;C. Algani;P. Chevalier;J.-L. Polleux","doi":"10.1109/LED.2024.3521117","DOIUrl":"https://doi.org/10.1109/LED.2024.3521117","url":null,"abstract":"This letter presents performances of Si/SiGe heterojunction bipolar phototransistors (HPT) used for microwave photonics communication receiver link around 850nm. SiGe phototransistors are designed in an industrial 55-nm SiGe BiCMOS from STMicroelectronics without any change in the layers technology process. Different horizontal geometries of HPTs and biasing techniques were evaluated. The static responsivity of a <inline-formula> <tex-math>$20times 20~ {mu }$ </tex-math></inline-formula>m2 optical window HPT reached 20.7 A/W at 900nm. This is the highest static responsivities reported for a fully-integrated Si/SiGe HPT with vertical illumination. A 1.6-GHz bandwidth for a 10.5-A/W static responsivity was achieved for a <inline-formula> <tex-math>$5times 5 {mu }$ </tex-math></inline-formula>m2 optical window HPT using current bias.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 2","pages":"239-242"},"PeriodicalIF":4.1,"publicationDate":"2024-12-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10811996","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143361434","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Bidirectional photoresponsive synaptic devices offer distinct advantages and significant potential for applications in artificial visual systems. However, most existing artificial optical synapses require both optical stimulation and separate electrical control to achieve bidirectional synaptic conductance modulation, thereby increasing processing time and system complexity. In this study, we developed a bidirectional photoresponsive synaptic transistor based on a heterostructure of indium oxide (In2O3) and organic semiconductor, which exhibits positive response to ultraviolet (UV) light and negative response to red-light illumination. Leveraging their reversible conductance tunability, we simulated artificial neural networks for handwritten digit recognition, achieving an accuracy of 94.7%. Furthermore, the synaptic transistors can be utilized for precise motion perception, achieving 100% prediction accuracy.
{"title":"All-Optical Controlled Bidirectional Synaptic Transistors for Motion Perception","authors":"Xiaotao Jing;Rui Wang;Dingwei Li;Wanlin Zhang;Tonglong Zeng;Qi Huang;Xiaohua Ma;Bowen Zhu;Hong Wang;Yue Hao","doi":"10.1109/LED.2024.3521039","DOIUrl":"https://doi.org/10.1109/LED.2024.3521039","url":null,"abstract":"Bidirectional photoresponsive synaptic devices offer distinct advantages and significant potential for applications in artificial visual systems. However, most existing artificial optical synapses require both optical stimulation and separate electrical control to achieve bidirectional synaptic conductance modulation, thereby increasing processing time and system complexity. In this study, we developed a bidirectional photoresponsive synaptic transistor based on a heterostructure of indium oxide (In2O3) and organic semiconductor, which exhibits positive response to ultraviolet (UV) light and negative response to red-light illumination. Leveraging their reversible conductance tunability, we simulated artificial neural networks for handwritten digit recognition, achieving an accuracy of 94.7%. Furthermore, the synaptic transistors can be utilized for precise motion perception, achieving 100% prediction accuracy.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 2","pages":"298-301"},"PeriodicalIF":4.1,"publicationDate":"2024-12-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143361280","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-12-23DOI: 10.1109/LED.2024.3521092
Qingxiao Zhu;Lihua Xu;Yuan Wang;Yue Zhao;Lingfei Wang;Qing Luo
The presence of charge trapping dynamics in general ferroelectric-gate field effect transistors (FeFETs) is significant in the memory window (MW) modulation and optimization. To comprehend underlying mechanisms of this phenomenon, the low-frequency (i.e., 1/f noise) measurements in a wide range of programming/erasing voltages are conducted for HfO2-based FeFETs on FDSOI. When applying the small DC sweeping, a counterclockwise hysteresis is obviously observed, resulting from the charge trapping dynamics induced carrier density fluctuations near interfaces between DE-layer and FE-layer. By increasing the voltage amplitude, a transition from failure, to partial and then to a complete memristive operation is observed. It is determined by combination of gate dielectric trap density, ferroelectric polarization and bias temperature instability. Combining experimental data and LFN-based models, the corresponding defect density distributions inside the stacked gate oxides are extracted to explain the complex current hysteresis transition and threshold voltage shift behaviors.
{"title":"A Systematic Study of Charge-Trapping Phenomenon in FeFET on FDSOI via Low-Frequency Noise Spectroscopy","authors":"Qingxiao Zhu;Lihua Xu;Yuan Wang;Yue Zhao;Lingfei Wang;Qing Luo","doi":"10.1109/LED.2024.3521092","DOIUrl":"https://doi.org/10.1109/LED.2024.3521092","url":null,"abstract":"The presence of charge trapping dynamics in general ferroelectric-gate field effect transistors (FeFETs) is significant in the memory window (MW) modulation and optimization. To comprehend underlying mechanisms of this phenomenon, the low-frequency (i.e., 1/f noise) measurements in a wide range of programming/erasing voltages are conducted for HfO2-based FeFETs on FDSOI. When applying the small DC sweeping, a counterclockwise hysteresis is obviously observed, resulting from the charge trapping dynamics induced carrier density fluctuations near interfaces between DE-layer and FE-layer. By increasing the voltage amplitude, a transition from failure, to partial and then to a complete memristive operation is observed. It is determined by combination of gate dielectric trap density, ferroelectric polarization and bias temperature instability. Combining experimental data and LFN-based models, the corresponding defect density distributions inside the stacked gate oxides are extracted to explain the complex current hysteresis transition and threshold voltage shift behaviors.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 2","pages":"195-198"},"PeriodicalIF":4.1,"publicationDate":"2024-12-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143184507","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-12-23DOI: 10.1109/LED.2024.3521082
Yifu Wang;Weizong Xu;Dong Zhou;Feng Zhou;Fangfang Ren;Dunjun Chen;Rong Zhang;Youdou Zheng;Hai Lu
Extreme ultraviolet (EUV) detectors are essential components required in many cutting-edge applications. In this work, a 6.5 mm $times 6.5$ mm large-area 4H-SiC EUV position sensitive detector (PSD) has been design and fabricated. Based on a synchrotron radiation test system, the SiC PSD exhibits a relatively low position error of $63~mu $ m, a low nonlinearity of 2.1% and a high position resolution of $8.5~mu $ m. The detector also realizes a low dark current of 9 pA, a high responsivity of 0.06 A/W and a low photo-response non-uniformity of less than 1% at 13.5 nm. Together with the superior transient response and stable switching performance, the SiC PSDs present notable potential in high-end EUV position detection applications.
{"title":"4H-SiC Position-Sensitive Detector Working in Extreme Ultraviolet Wavelength Band","authors":"Yifu Wang;Weizong Xu;Dong Zhou;Feng Zhou;Fangfang Ren;Dunjun Chen;Rong Zhang;Youdou Zheng;Hai Lu","doi":"10.1109/LED.2024.3521082","DOIUrl":"https://doi.org/10.1109/LED.2024.3521082","url":null,"abstract":"Extreme ultraviolet (EUV) detectors are essential components required in many cutting-edge applications. In this work, a 6.5 mm <inline-formula> <tex-math>$times 6.5$ </tex-math></inline-formula> mm large-area 4H-SiC EUV position sensitive detector (PSD) has been design and fabricated. Based on a synchrotron radiation test system, the SiC PSD exhibits a relatively low position error of <inline-formula> <tex-math>$63~mu $ </tex-math></inline-formula>m, a low nonlinearity of 2.1% and a high position resolution of <inline-formula> <tex-math>$8.5~mu $ </tex-math></inline-formula>m. The detector also realizes a low dark current of 9 pA, a high responsivity of 0.06 A/W and a low photo-response non-uniformity of less than 1% at 13.5 nm. Together with the superior transient response and stable switching performance, the SiC PSDs present notable potential in high-end EUV position detection applications.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 2","pages":"243-246"},"PeriodicalIF":4.1,"publicationDate":"2024-12-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143361435","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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