Pub Date : 2024-10-21DOI: 10.1109/LED.2024.3483888
Hanchao Li;Hanlin Xie;Qingyun Xie;Siyu Liu;Yue Wang;Yuxuan Wang;Kumud Ranjan;Yihao Zhuang;Xiao Gong;Geok Ing Ng
This Letter reports a double heterostructure (DH) AlN/GaN/AlGaN-on-Si HEMT, which has been proposed, for low voltage (LV, $le 5$ V) RF operation. The proposed transistor shows excellent DC ( ${I}_{textit {dmax}} =1.9$ A/mm, ${g}_{textit {mmax}} =0.66$ S/mm) and RF small-signal characteristics ( ${f}_{T}$ / ${f}_{textit {max}} =145$ /195 GHz). Continuous-wave (CW) load-pull measurements at 30 GHz yield ${P}_{textit {sat}}$ of 0.6 (1.3) W/mm at V $_{textit {ds}}$ of 3.5 (5) V, and peak power-added efficiency (PAE) of 43% (42%). To the best of the authors’ knowledge, the ${P}_{textit {sat}}$ values are the highest reported for LV GaN-on-Si HEMTs in 5G FR2, despite the use of conventional alloyed contacts and a gate length ( ${L}_{g}$ ) of 120 nm. Furthermore, among published LV GaN-on-Si HEMTs, the proposed transistor achieves a desired combination of saturation velocity ( ${v} _{textit {sat}}$ ) and knee voltage ( ${V}_{textit {knee}}$ ), which are critical factors for LV power amplification. The results reflect the promising potential of the proposed heterostructure to achieve high transmit power in 5G FR2 handsets.
{"title":"AlN/GaN/AlGaN-on-Si HEMT Achieving 1.3 W/mm at 5 V for 5G FR2 Handsets","authors":"Hanchao Li;Hanlin Xie;Qingyun Xie;Siyu Liu;Yue Wang;Yuxuan Wang;Kumud Ranjan;Yihao Zhuang;Xiao Gong;Geok Ing Ng","doi":"10.1109/LED.2024.3483888","DOIUrl":"https://doi.org/10.1109/LED.2024.3483888","url":null,"abstract":"This Letter reports a double heterostructure (DH) AlN/GaN/AlGaN-on-Si HEMT, which has been proposed, for low voltage (LV, \u0000<inline-formula> <tex-math>$le 5$ </tex-math></inline-formula>\u0000 V) RF operation. The proposed transistor shows excellent DC (\u0000<inline-formula> <tex-math>${I}_{textit {dmax}} =1.9$ </tex-math></inline-formula>\u0000 A/mm, \u0000<inline-formula> <tex-math>${g}_{textit {mmax}} =0.66$ </tex-math></inline-formula>\u0000 S/mm) and RF small-signal characteristics (\u0000<inline-formula> <tex-math>${f}_{T}$ </tex-math></inline-formula>\u0000/\u0000<inline-formula> <tex-math>${f}_{textit {max}} =145$ </tex-math></inline-formula>\u0000/195 GHz). Continuous-wave (CW) load-pull measurements at 30 GHz yield \u0000<inline-formula> <tex-math>${P}_{textit {sat}}$ </tex-math></inline-formula>\u0000 of 0.6 (1.3) W/mm at V\u0000<inline-formula> <tex-math>$_{textit {ds}}$ </tex-math></inline-formula>\u0000 of 3.5 (5) V, and peak power-added efficiency (PAE) of 43% (42%). To the best of the authors’ knowledge, the \u0000<inline-formula> <tex-math>${P}_{textit {sat}}$ </tex-math></inline-formula>\u0000 values are the highest reported for LV GaN-on-Si HEMTs in 5G FR2, despite the use of conventional alloyed contacts and a gate length (\u0000<inline-formula> <tex-math>${L}_{g}$ </tex-math></inline-formula>\u0000) of 120 nm. Furthermore, among published LV GaN-on-Si HEMTs, the proposed transistor achieves a desired combination of saturation velocity (\u0000<inline-formula> <tex-math>${v} _{textit {sat}}$ </tex-math></inline-formula>\u0000) and knee voltage (\u0000<inline-formula> <tex-math>${V}_{textit {knee}}$ </tex-math></inline-formula>\u0000), which are critical factors for LV power amplification. The results reflect the promising potential of the proposed heterostructure to achieve high transmit power in 5G FR2 handsets.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"45 12","pages":"2315-2318"},"PeriodicalIF":4.1,"publicationDate":"2024-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142761513","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-10-21DOI: 10.1109/LED.2024.3483841
Jing-Ting Ye;Jia-Wei Cai;Fei-Le Xue;Zhen-Ni Lu;Zhong-Da Zhang;Ya-Nan Zhong;Jian-Long Xu;Xu Gao;Sui-Dong Wang
Photoresponsive memcapacitors are capable of changing their capacitance in an analog manner in response to light stimuli, with ultralow static power consumption and history-dependent processing. We report an indium gallium zinc oxide (IGZO) memcapacitor based on the mechanism of light-induced effective area variation. The device acts as a photoresponsive artificial synapse, demonstrating its capacitive update under light stimulation akin to the learning and forgetting process in the brain. By synergistically applying light and electrical pulses, the device exhibits Pavlov’s classical conditioning behavior. The learning and adaptation features may arise from the persistent photoconductivity effect in the IGZO active layer. The IGZO memcapacitor allows for processing and storing information directly with selective light, making it useful for creating adaptable optical neuromorphic systems.
{"title":"Photoresponsive IGZO Memcapacitor With Associative Learning Capability","authors":"Jing-Ting Ye;Jia-Wei Cai;Fei-Le Xue;Zhen-Ni Lu;Zhong-Da Zhang;Ya-Nan Zhong;Jian-Long Xu;Xu Gao;Sui-Dong Wang","doi":"10.1109/LED.2024.3483841","DOIUrl":"https://doi.org/10.1109/LED.2024.3483841","url":null,"abstract":"Photoresponsive memcapacitors are capable of changing their capacitance in an analog manner in response to light stimuli, with ultralow static power consumption and history-dependent processing. We report an indium gallium zinc oxide (IGZO) memcapacitor based on the mechanism of light-induced effective area variation. The device acts as a photoresponsive artificial synapse, demonstrating its capacitive update under light stimulation akin to the learning and forgetting process in the brain. By synergistically applying light and electrical pulses, the device exhibits Pavlov’s classical conditioning behavior. The learning and adaptation features may arise from the persistent photoconductivity effect in the IGZO active layer. The IGZO memcapacitor allows for processing and storing information directly with selective light, making it useful for creating adaptable optical neuromorphic systems.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"45 12","pages":"2569-2572"},"PeriodicalIF":4.1,"publicationDate":"2024-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142754277","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In this study, we investigated the impact of overshoot current (Iover) on the reliability of selector-only memory (SOM) devices based on an ovonic threshold switch (OTS). We found that implementing a multi-step pulse during the write operation reduced Iover by 40%, significantly decreased threshold voltage (Vth) variability during the read process to ensure sufficient read window margin, and improved endurance by more than an order of magnitude, compared to the traditional square pulse. Our analysis revealed that the Iover leads to increased Ion variability, which in turn causes greater variability in the write pulse’s impact on subsequent read process. Furthermore, Iover generates extra injection charge, which directly correlating with increased device stress and significantly impacting endurance. Through intermittent and continuous pulse measurements, we confirmed the critical role of Iover in cycling stability. Our findings underscore the importance of suppressing Iover to enhance SOM reliability, emphasizing the need for optimizing the multi-step pulse method.
{"title":"Enhancing Selector-Only Memory Reliability Through Multi-Step Write Pulse","authors":"Yoori Seo;Sanghyun Ban;Jangseop Lee;Dongmin Kim;Laeyong Jung;Hyunsang Hwang","doi":"10.1109/LED.2024.3483960","DOIUrl":"https://doi.org/10.1109/LED.2024.3483960","url":null,"abstract":"In this study, we investigated the impact of overshoot current (Iover) on the reliability of selector-only memory (SOM) devices based on an ovonic threshold switch (OTS). We found that implementing a multi-step pulse during the write operation reduced Iover by 40%, significantly decreased threshold voltage (Vth) variability during the read process to ensure sufficient read window margin, and improved endurance by more than an order of magnitude, compared to the traditional square pulse. Our analysis revealed that the Iover leads to increased Ion variability, which in turn causes greater variability in the write pulse’s impact on subsequent read process. Furthermore, Iover generates extra injection charge, which directly correlating with increased device stress and significantly impacting endurance. Through intermittent and continuous pulse measurements, we confirmed the critical role of Iover in cycling stability. Our findings underscore the importance of suppressing Iover to enhance SOM reliability, emphasizing the need for optimizing the multi-step pulse method.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"45 12","pages":"2383-2386"},"PeriodicalIF":4.1,"publicationDate":"2024-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142736475","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
We have designed an AlGaN/GaN-based metal-heterostructure-metal (MHM) ultraviolet (UV) phototransistor (PT) with bent-Gate Structure. After partial etching of the AlGaN/GaN layer, an interdigital Ti/Al/Ni/Au metal stack was deposited on the GaN absorber layer to form an ohmic contact, which is in lateral contact with the AlGaN/GaN heterojunction to form a MHM structure. A bent gate was embedded between the interdigital ohmic electrodes to control the switching state of the two-dimensional electron gas (2DEG) channel. More importantly, benefiting from the strong polarization electric field in the lengthwise direction and the 2DEG high mobility channel in the lateral direction at the AlGaN/GaN heterojunction interface of the device, the device shows excellent photodetection performance: a peak responsivity (R) of $6 times 10^{{4}}$ A/W can be obtained under 265 nm UV irradiation, with a corresponding detectivity (D $^{ast }$ ) of $8.28 times 10^{{16}}~text {cm}cdot text {W}^{-{1}}cdot text {Hz}^{text {1/2}}$ ; and a responsivity of $1.8 times 10^{{4}}$ A/W can be obtained under 360 nm UV irradiation, with a corresponding D $^{ast }$ of $2.48 times 10^{{16}}~text {cm}cdot text {W}^{-{1}} cdot text {Hz}^{text {1/2}}$ . In addition, we have analyzed and investigated the operating principle of the designed device and the control mechanism of the bent gate using the theoretically simulated results of the device.
设计了一种具有弯栅结构的AlGaN/ gan基金属异质结构金属紫外光电晶体管（PT）。在部分蚀刻AlGaN/GaN层后，在GaN吸收层上沉积Ti/Al/Ni/Au金属层，形成欧姆接触，与AlGaN/GaN异质结横向接触，形成MHM结构。在数字间欧姆电极之间嵌入弯曲栅极来控制二维电子气通道的开关状态。更重要的是，得益于器件的AlGaN/GaN异质结界面纵向强极化电场和横向2DEG高迁移率通道，器件表现出优异的光探测性能：在265 nm紫外光照射下，峰值响应度(R)为$6 乘以10^{{4}}$ a /W，相应的探测率（D $^{ast}$）为$8.28 乘以10^{{16}}~text {cm}cdot text {W}^{-{1}}cdot text {Hz}} {text {1/2}}$；在360 nm紫外光照射下，响应度为$1.8 乘以10^{{4}}$ a /W，对应的D $ $ {ast}$为$2.48 乘以10^{{16}}~text {cm}cdot text {W}^{-{1}} cdot text {Hz}} {text{1/2}}$。此外，利用该装置的理论仿真结果，对所设计装置的工作原理和弯栅的控制机理进行了分析和研究。
{"title":"AlGaN/GaN HEMT-Based MHM Ultraviolet Phototransistor With Bent-Gate Structure","authors":"Biao Gong;Mei Ge;Xiao Wang;Bingjie Ye;Irina Nikolaevna Parkhomenko;Fadei Fadeevich Komarov;Jin Wang;Junjun Xue;Yu Liu;Guofeng Yang","doi":"10.1109/LED.2024.3483730","DOIUrl":"https://doi.org/10.1109/LED.2024.3483730","url":null,"abstract":"We have designed an AlGaN/GaN-based metal-heterostructure-metal (MHM) ultraviolet (UV) phototransistor (PT) with bent-Gate Structure. After partial etching of the AlGaN/GaN layer, an interdigital Ti/Al/Ni/Au metal stack was deposited on the GaN absorber layer to form an ohmic contact, which is in lateral contact with the AlGaN/GaN heterojunction to form a MHM structure. A bent gate was embedded between the interdigital ohmic electrodes to control the switching state of the two-dimensional electron gas (2DEG) channel. More importantly, benefiting from the strong polarization electric field in the lengthwise direction and the 2DEG high mobility channel in the lateral direction at the AlGaN/GaN heterojunction interface of the device, the device shows excellent photodetection performance: a peak responsivity (R) of \u0000<inline-formula> <tex-math>$6 times 10^{{4}}$ </tex-math></inline-formula>\u0000 A/W can be obtained under 265 nm UV irradiation, with a corresponding detectivity (D\u0000<inline-formula> <tex-math>$^{ast }$ </tex-math></inline-formula>\u0000) of \u0000<inline-formula> <tex-math>$8.28 times 10^{{16}}~text {cm}cdot text {W}^{-{1}}cdot text {Hz}^{text {1/2}}$ </tex-math></inline-formula>\u0000; and a responsivity of \u0000<inline-formula> <tex-math>$1.8 times 10^{{4}}$ </tex-math></inline-formula>\u0000 A/W can be obtained under 360 nm UV irradiation, with a corresponding D\u0000<inline-formula> <tex-math>$^{ast }$ </tex-math></inline-formula>\u0000 of \u0000<inline-formula> <tex-math>$2.48 times 10^{{16}}~text {cm}cdot text {W}^{-{1}} cdot text {Hz}^{text {1/2}}$ </tex-math></inline-formula>\u0000. In addition, we have analyzed and investigated the operating principle of the designed device and the control mechanism of the bent gate using the theoretically simulated results of the device.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"45 12","pages":"2335-2338"},"PeriodicalIF":4.1,"publicationDate":"2024-10-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142761501","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-10-18DOI: 10.1109/LED.2024.3483752
Jin Wook Lee;Geun Tae Park;Myeong Su Shin;Woo Young Choi
Monolithic three-dimensional integrated CMOS-nanoelectromechanical (NEM) circuits are gaining traction owing to their high chip density and low power consumption. However, the low endurance of NEM memory switches presents a reliability challenge. In this study, a novel torsional-via-assisted NEM memory switch design is proposed and experimentally demonstrated. The design incorporates vertically connected via anchors to allow torsion, which alleviates the maximum stress on the beam by ~46 % compared to the conventional in-plane design. The measurement data confirm endurance improvement, which sets a new benchmark for nonvolatile NEM memory switches with an endurance cycle exceeding 4,000 times. Furthermore, it was experimentally discussed that the electrode-gap narrowing induced by repeated switching cycles allows for a lower average operation voltage.
{"title":"Torsional-via-Assisted Nanoelectromechanical Memory Switches","authors":"Jin Wook Lee;Geun Tae Park;Myeong Su Shin;Woo Young Choi","doi":"10.1109/LED.2024.3483752","DOIUrl":"https://doi.org/10.1109/LED.2024.3483752","url":null,"abstract":"Monolithic three-dimensional integrated CMOS-nanoelectromechanical (NEM) circuits are gaining traction owing to their high chip density and low power consumption. However, the low endurance of NEM memory switches presents a reliability challenge. In this study, a novel torsional-via-assisted NEM memory switch design is proposed and experimentally demonstrated. The design incorporates vertically connected via anchors to allow torsion, which alleviates the maximum stress on the beam by ~46 % compared to the conventional in-plane design. The measurement data confirm endurance improvement, which sets a new benchmark for nonvolatile NEM memory switches with an endurance cycle exceeding 4,000 times. Furthermore, it was experimentally discussed that the electrode-gap narrowing induced by repeated switching cycles allows for a lower average operation voltage.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"45 12","pages":"2573-2576"},"PeriodicalIF":4.1,"publicationDate":"2024-10-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10723102","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142753795","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-10-16DOI: 10.1109/LED.2024.3480908
Jiahong Luo;Chenhong Huang;Yujia Tu;Zeyuan Fei;Zimin Chen;Weiqu Chen;Yanli Pei;Gang Wang;Xing Lu
$varepsilon $ -phase gallium oxide ( $varepsilon $ -Ga2O $_{{3}}$ ) semiconductor offers an excellent potential for fabricating surface acoustic wave photodetectors (SAW PDs) to detect deep ultraviolet (deep-UV) light, taking advantage of its combination of an ultra-wide bandgap of $sim ~4.9$ eV and a strong piezoelectric property. In this letter, we developed SAW deep-UV PDs in a single-port resonator topology using an $varepsilon $ - Ga2O3 thin film grown on sapphire substrates. The device exhibited two resonate frequencies at 1.39 and 2.33 GHz, corresponding to the propagation of Rayleigh and Sezawa waves. The frequency shifts of the Rayleigh mode signal to a 254-nm wavelength UV illumination were investigated and discussed. The $varepsilon $ -Ga2O3 SAW PDs in our study, yielding a competitive responsivity of 5.4 ppm $cdot (mu $ W/cm $^{{2}})^{text {-1}}$ , were demonstrated to be suitable for deep-UV detection.
{"title":"An ε -Ga₂O₃-Based Surface Acoustic Wave Resonator for Deep Ultraviolet Detection","authors":"Jiahong Luo;Chenhong Huang;Yujia Tu;Zeyuan Fei;Zimin Chen;Weiqu Chen;Yanli Pei;Gang Wang;Xing Lu","doi":"10.1109/LED.2024.3480908","DOIUrl":"https://doi.org/10.1109/LED.2024.3480908","url":null,"abstract":"<inline-formula> <tex-math>$varepsilon $ </tex-math></inline-formula>\u0000-phase gallium oxide (\u0000<inline-formula> <tex-math>$varepsilon $ </tex-math></inline-formula>\u0000-Ga2O\u0000<inline-formula> <tex-math>$_{{3}}$ </tex-math></inline-formula>\u0000) semiconductor offers an excellent potential for fabricating surface acoustic wave photodetectors (SAW PDs) to detect deep ultraviolet (deep-UV) light, taking advantage of its combination of an ultra-wide bandgap of \u0000<inline-formula> <tex-math>$sim ~4.9$ </tex-math></inline-formula>\u0000 eV and a strong piezoelectric property. In this letter, we developed SAW deep-UV PDs in a single-port resonator topology using an \u0000<inline-formula> <tex-math>$varepsilon $ </tex-math></inline-formula>\u0000- Ga2O3 thin film grown on sapphire substrates. The device exhibited two resonate frequencies at 1.39 and 2.33 GHz, corresponding to the propagation of Rayleigh and Sezawa waves. The frequency shifts of the Rayleigh mode signal to a 254-nm wavelength UV illumination were investigated and discussed. The \u0000<inline-formula> <tex-math>$varepsilon $ </tex-math></inline-formula>\u0000-Ga2O3 SAW PDs in our study, yielding a competitive responsivity of 5.4 ppm\u0000<inline-formula> <tex-math>$cdot (mu $ </tex-math></inline-formula>\u0000W/cm\u0000<inline-formula> <tex-math>$^{{2}})^{text {-1}}$ </tex-math></inline-formula>\u0000, were demonstrated to be suitable for deep-UV detection.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"45 12","pages":"2510-2513"},"PeriodicalIF":4.1,"publicationDate":"2024-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142753802","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-10-16DOI: 10.1109/LED.2024.3479200
Dun-Bao Ruan;Kuei-Shu Chang-Liao;Kai-Chun Yang;Kai-Jhih Gan
A novel plasma-enhanced supercritical phase fluid (SCF) process is proposed on a Ge FinFET CMOS inverter to resolve the insufficient oxidation in large-size chamber and unavailable nitridation effects with a SCF system. The metastable low oxidation states and interface traps in high-k and interfacial layer are clearly reduced by the supplemented oxygen and nitrogen radicals in SCF. As a result, Ge FinFET with enhanced oxidation and partially nitridation (EOPN)-SCF treatment exhibits an EOT value of 0.66 nm, drive current of 2.6 mA/ $mu $ m (@V $_{text {OV}}=1$ V), leakage current of 0.3 nA/ $mu $ m, ION/IOFF of ${7}times {10} ^{{5}}$ , S.S. value of 88 mV/dec, DIT of ${3}times {10} ^{{11}}$ cm-2eV-1, fewer border traps, better reliability characteristics, more symmetrical VIN-VOUT and peak voltage gain of 58 V/V for CMOS inverter.
{"title":"Improved Electrical Characteristics of Ge FinFET CMOS by Plasma-Enhanced Oxidation and Partial Nitridation With Supercritical Fluid Treatment","authors":"Dun-Bao Ruan;Kuei-Shu Chang-Liao;Kai-Chun Yang;Kai-Jhih Gan","doi":"10.1109/LED.2024.3479200","DOIUrl":"https://doi.org/10.1109/LED.2024.3479200","url":null,"abstract":"A novel plasma-enhanced supercritical phase fluid (SCF) process is proposed on a Ge FinFET CMOS inverter to resolve the insufficient oxidation in large-size chamber and unavailable nitridation effects with a SCF system. The metastable low oxidation states and interface traps in high-k and interfacial layer are clearly reduced by the supplemented oxygen and nitrogen radicals in SCF. As a result, Ge FinFET with enhanced oxidation and partially nitridation (EOPN)-SCF treatment exhibits an EOT value of 0.66 nm, drive current of 2.6 mA/\u0000<inline-formula> <tex-math>$mu $ </tex-math></inline-formula>\u0000m (@V\u0000<inline-formula> <tex-math>$_{text {OV}}=1$ </tex-math></inline-formula>\u0000V), leakage current of 0.3 nA/\u0000<inline-formula> <tex-math>$mu $ </tex-math></inline-formula>\u0000m, ION/IOFF of \u0000<inline-formula> <tex-math>${7}times {10} ^{{5}}$ </tex-math></inline-formula>\u0000, S.S. value of 88 mV/dec, DIT of \u0000<inline-formula> <tex-math>${3}times {10} ^{{11}}$ </tex-math></inline-formula>\u0000 cm-2eV-1, fewer border traps, better reliability characteristics, more symmetrical VIN-VOUT and peak voltage gain of 58 V/V for CMOS inverter.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"45 12","pages":"2276-2279"},"PeriodicalIF":4.1,"publicationDate":"2024-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142761546","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A bottom-gate thin-film transistor (TFT) with hydrogen-doped polycrystalline indium oxide (poly-InOx:H) channel was fabricated to investigate the uniformity and reliability of the TFT. The carrier density ( ${N}_{text {e}}text {)}$ of the poly-InOx:H film markedly decreased after solid-phase crystallization in air at 300°C, and a nondegenerate poly-InOx:H film with ${N}_{text {e}}$ of ${1}.{7}times {10} ^{{17}}$ cm $^{-{3}}$ could be achieved. The TFT with a 30-nm-thick poly-InOx:H channel operated in enhancement mode (E-mode) after post-fabrication annealing at more than 300°C. The poly-InOx:H TFT exhibited good short-range uniformities with a field-effect mobility ( $mu _{text {FE}}text {)}$ of $32.0~pm ~0.39$ ( $3sigma text {)}$ cm2/Vs and a threshold voltage ( ${V}_{text {t}}text {)}$ of $0.58~pm ~0.18$ ( $3sigma text {)}$ V. Furthermore, no threshold voltage shift was observed under negative gate bias and temperature stress at 60°C for 6,000 s.
{"title":"Uniformity and Reliability of Enhancement-Mode Polycrystalline Indium Oxide Thin Film Transistors Formed by Solid-Phase Crystallization","authors":"Naoki Okamoto;Xiaoqian Wang;Kotaro Morita;Yuto Kato;Mir Mutakabbir Alom;Yusaku Magari;Mamoru Furuta","doi":"10.1109/LED.2024.3480991","DOIUrl":"https://doi.org/10.1109/LED.2024.3480991","url":null,"abstract":"A bottom-gate thin-film transistor (TFT) with hydrogen-doped polycrystalline indium oxide (poly-InOx:H) channel was fabricated to investigate the uniformity and reliability of the TFT. The carrier density (\u0000<inline-formula> <tex-math>${N}_{text {e}}text {)}$ </tex-math></inline-formula>\u0000 of the poly-InOx:H film markedly decreased after solid-phase crystallization in air at 300°C, and a nondegenerate poly-InOx:H film with \u0000<inline-formula> <tex-math>${N}_{text {e}}$ </tex-math></inline-formula>\u0000 of \u0000<inline-formula> <tex-math>${1}.{7}times {10} ^{{17}}$ </tex-math></inline-formula>\u0000 cm\u0000<inline-formula> <tex-math>$^{-{3}}$ </tex-math></inline-formula>\u0000 could be achieved. The TFT with a 30-nm-thick poly-InOx:H channel operated in enhancement mode (E-mode) after post-fabrication annealing at more than 300°C. The poly-InOx:H TFT exhibited good short-range uniformities with a field-effect mobility (\u0000<inline-formula> <tex-math>$mu _{text {FE}}text {)}$ </tex-math></inline-formula>\u0000 of \u0000<inline-formula> <tex-math>$32.0~pm ~0.39$ </tex-math></inline-formula>\u0000 (\u0000<inline-formula> <tex-math>$3sigma text {)}$ </tex-math></inline-formula>\u0000 cm2/Vs and a threshold voltage (\u0000<inline-formula> <tex-math>${V}_{text {t}}text {)}$ </tex-math></inline-formula>\u0000 of \u0000<inline-formula> <tex-math>$0.58~pm ~0.18$ </tex-math></inline-formula>\u0000 (\u0000<inline-formula> <tex-math>$3sigma text {)}$ </tex-math></inline-formula>\u0000 V. Furthermore, no threshold voltage shift was observed under negative gate bias and temperature stress at 60°C for 6,000 s.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"45 12","pages":"2403-2406"},"PeriodicalIF":4.1,"publicationDate":"2024-10-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142736521","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-10-15DOI: 10.1109/LED.2024.3480138
Ken Kudara;Yuji Komatsuzaki;Yutaro Yamaguchi;Shintaro Shinjo;Masakazu Arai;Hiroshi Kawarada
This letter reports on an L-band diamond amplifier with a multi-finger structure. The $0.5~mu $ m gate length two-dimensional hole gas diamond field-effect transistor, utilizing a multi-finger structure with a total gate width of 10 finger $times 100~mu $ m, aims to enhance high-frequency performance due to low gate resistance compared to a double-finger structure. It demonstrates large-signal operation over 2 GHz with a total gate width of more than 1 mm, marking a first in diamond field-effect transistor. The development of this amplifier was achieved using an atomic layer deposition two-dimensional hole gas diamond metal-oxide-semiconductor field-effect transistor, using a multi-finger structure with a total gate width of 10 finger $times 50~mu $ m, alongside printed circuit board and surface mount devices components. The resulting diamond amplifier exhibited linear gains of more than 7 dB and output power levels of 20.7 dBm, with maximum drain efficiency of 3.5 % achieved at 1.8 GHz, with drain voltage of −40 V. Among diamond amplifiers, this configuration demonstrated the highest output power performance.
{"title":"L-Band Diamond Amplifier With Multi-Finger Structure","authors":"Ken Kudara;Yuji Komatsuzaki;Yutaro Yamaguchi;Shintaro Shinjo;Masakazu Arai;Hiroshi Kawarada","doi":"10.1109/LED.2024.3480138","DOIUrl":"https://doi.org/10.1109/LED.2024.3480138","url":null,"abstract":"This letter reports on an L-band diamond amplifier with a multi-finger structure. The \u0000<inline-formula> <tex-math>$0.5~mu $ </tex-math></inline-formula>\u0000m gate length two-dimensional hole gas diamond field-effect transistor, utilizing a multi-finger structure with a total gate width of 10 finger \u0000<inline-formula> <tex-math>$times 100~mu $ </tex-math></inline-formula>\u0000m, aims to enhance high-frequency performance due to low gate resistance compared to a double-finger structure. It demonstrates large-signal operation over 2 GHz with a total gate width of more than 1 mm, marking a first in diamond field-effect transistor. The development of this amplifier was achieved using an atomic layer deposition two-dimensional hole gas diamond metal-oxide-semiconductor field-effect transistor, using a multi-finger structure with a total gate width of 10 finger \u0000<inline-formula> <tex-math>$times 50~mu $ </tex-math></inline-formula>\u0000m, alongside printed circuit board and surface mount devices components. The resulting diamond amplifier exhibited linear gains of more than 7 dB and output power levels of 20.7 dBm, with maximum drain efficiency of 3.5 % achieved at 1.8 GHz, with drain voltage of −40 V. Among diamond amplifiers, this configuration demonstrated the highest output power performance.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"45 12","pages":"2491-2494"},"PeriodicalIF":4.1,"publicationDate":"2024-10-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142753830","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Flexible dual-mode sensors that are capable of simultaneously sensing temperature and strain exhibit huge prospects in applications such as health monitoring, human-computer interaction, and intelligent robots. However, decoupling different stimuli accurately still faces severe challenges. In this study, we present a silicon based flexible dual-mode sensor that can be seamlessly attached to human body, enabling precise and real-time acquisition of physiological temperature and strain signals. The fabricated device only contains one sensing unit, with good sensing performances to both temperature and bending strain, including good linearity, high sensitivity, low hysteresis, and long-term stability. In various application scenarios, the fabricated dual-mode sensor can be utilized to monitor respiration, pulse, and body temperature. Moreover, due to different specific response times to temperature and strain, pulse and temperature signals obtained from the wrist can be successfully decoupled through the fast Fourier transform (FFT) and inverse FFT. These presented results offer significant potentials for the development of skin-inspired electronics with simple device structures and multifunctional capabilities.
{"title":"Silicon Nanomembrane Based Flexible Temperature-Bending Strain Dual-Mode Sensor Decoupled by Fast Fourier Transform","authors":"Deyu Meng;Haonan Zhao;Xiaozhong Wu;Min Liu;Qinglei Guo","doi":"10.1109/LED.2024.3481255","DOIUrl":"https://doi.org/10.1109/LED.2024.3481255","url":null,"abstract":"Flexible dual-mode sensors that are capable of simultaneously sensing temperature and strain exhibit huge prospects in applications such as health monitoring, human-computer interaction, and intelligent robots. However, decoupling different stimuli accurately still faces severe challenges. In this study, we present a silicon based flexible dual-mode sensor that can be seamlessly attached to human body, enabling precise and real-time acquisition of physiological temperature and strain signals. The fabricated device only contains one sensing unit, with good sensing performances to both temperature and bending strain, including good linearity, high sensitivity, low hysteresis, and long-term stability. In various application scenarios, the fabricated dual-mode sensor can be utilized to monitor respiration, pulse, and body temperature. Moreover, due to different specific response times to temperature and strain, pulse and temperature signals obtained from the wrist can be successfully decoupled through the fast Fourier transform (FFT) and inverse FFT. These presented results offer significant potentials for the development of skin-inspired electronics with simple device structures and multifunctional capabilities.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"45 12","pages":"2518-2521"},"PeriodicalIF":4.1,"publicationDate":"2024-10-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142754251","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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