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Low-Energy Spiking Neural Network using Ge4Sb6Te7 Phase Change Memory Synapses 使用 Ge4Sb6Te7 相变记忆突触的低能量尖峰神经网络
IF 4.9 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
IEEE Electron Device Letters
Pub Date : 2024-08-06 DOI: 10.1109/led.2024.3439532
Shafin Bin Hamid, Asir Intisar Khan, Huairuo Zhang, Albert V. Davydov, Eric Pop
{"title":"Low-Energy Spiking Neural Network using Ge4Sb6Te7 Phase Change Memory Synapses","authors":"Shafin Bin Hamid, Asir Intisar Khan, Huairuo Zhang, Albert V. Davydov, Eric Pop","doi":"10.1109/led.2024.3439532","DOIUrl":"https://doi.org/10.1109/led.2024.3439532","url":null,"abstract":"","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":null,"pages":null},"PeriodicalIF":4.9,"publicationDate":"2024-08-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141940434","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High-Performance p-GaN/AlGaN/GaN HEMT-Based Ultraviolet Phototransistors With fW-Level Weak Light Detection Capacity 具有 fW 级弱光探测能力的高性能 p-GaN/AlGaN/GaN HEMT 紫外线光电晶体管
IF 4.9 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
IEEE Electron Device Letters
Pub Date : 2024-08-06 DOI: 10.1109/led.2024.3439518
Haiping Wang, Haifan You, Yifu Wang, Yiwang Wang, Hui Guo, Jiandong Ye, Hai Lu, Rong Zhang, Youdou Zheng, Dunjun Chen
{"title":"High-Performance p-GaN/AlGaN/GaN HEMT-Based Ultraviolet Phototransistors With fW-Level Weak Light Detection Capacity","authors":"Haiping Wang, Haifan You, Yifu Wang, Yiwang Wang, Hui Guo, Jiandong Ye, Hai Lu, Rong Zhang, Youdou Zheng, Dunjun Chen","doi":"10.1109/led.2024.3439518","DOIUrl":"https://doi.org/10.1109/led.2024.3439518","url":null,"abstract":"","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":null,"pages":null},"PeriodicalIF":4.9,"publicationDate":"2024-08-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141940568","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Intelligent Dual-Mode Photodetector Based on Relaxor Ferroelectric PMN-PT Single Crystal 基于松弛铁电 PMN-PT 单晶的智能双模光电探测器
IF 4.9 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
IEEE Electron Device Letters
Pub Date : 2024-08-05 DOI: 10.1109/led.2024.3438880
Haoran Guo, Ziliang Fang, Mingxu Yang, Hanrong Xie, Manyan Xie, Rui Rong, Yuming Wei, Gangding Peng, Tiefeng Yang, Heyuan Guan, Huihui Lu
{"title":"Intelligent Dual-Mode Photodetector Based on Relaxor Ferroelectric PMN-PT Single Crystal","authors":"Haoran Guo, Ziliang Fang, Mingxu Yang, Hanrong Xie, Manyan Xie, Rui Rong, Yuming Wei, Gangding Peng, Tiefeng Yang, Heyuan Guan, Huihui Lu","doi":"10.1109/led.2024.3438880","DOIUrl":"https://doi.org/10.1109/led.2024.3438880","url":null,"abstract":"","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":null,"pages":null},"PeriodicalIF":4.9,"publicationDate":"2024-08-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141940577","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Thermionic Field Emission in the Lifetime Estimation of p-GaN Gate HEMTs p-GaN 栅极 HEMT 寿命估算中的热离子场发射
IF 4.9 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
IEEE Electron Device Letters
Pub Date : 2024-08-05 DOI: 10.1109/led.2024.3438807
G. Greco, P. Fiorenza, F. Giannazzo, M. Vivona, C. Venuto, F. Iucolano, F. Roccaforte
{"title":"Thermionic Field Emission in the Lifetime Estimation of p-GaN Gate HEMTs","authors":"G. Greco, P. Fiorenza, F. Giannazzo, M. Vivona, C. Venuto, F. Iucolano, F. Roccaforte","doi":"10.1109/led.2024.3438807","DOIUrl":"https://doi.org/10.1109/led.2024.3438807","url":null,"abstract":"","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":null,"pages":null},"PeriodicalIF":4.9,"publicationDate":"2024-08-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141940574","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Waveguided Ge/Si Phototransistor with High Responsivity 具有高响应度的波导 Ge/Si 光电晶体管
IF 4.9 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
IEEE Electron Device Letters
Pub Date : 2024-08-05 DOI: 10.1109/led.2024.3438192
XueTong Li, Huan Qu, YingZhi Li, XiaoBin Liu, QiJie Xie, WeiPeng Wang, BaiSong Chen, HeMing Hu, ZiHao ZHi, Jie Li, QuanXin Na, GuoQiang Lo, XueYan Li, Lei Wang, XiaoLong Hu, JunFeng Song
{"title":"Waveguided Ge/Si Phototransistor with High Responsivity","authors":"XueTong Li, Huan Qu, YingZhi Li, XiaoBin Liu, QiJie Xie, WeiPeng Wang, BaiSong Chen, HeMing Hu, ZiHao ZHi, Jie Li, QuanXin Na, GuoQiang Lo, XueYan Li, Lei Wang, XiaoLong Hu, JunFeng Song","doi":"10.1109/led.2024.3438192","DOIUrl":"https://doi.org/10.1109/led.2024.3438192","url":null,"abstract":"","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":null,"pages":null},"PeriodicalIF":4.9,"publicationDate":"2024-08-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141940572","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Experimental Demonstration of Field-Free STT-Assisted SOT-MRAM (SAS-MRAM) with Four Bits per SOT Programming Line 每个 SOT 编程线四位的无场 STT 辅助 SOT-MRAM (SAS-MRAM) 实验演示
IF 4.9 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
IEEE Electron Device Letters
Pub Date : 2024-08-02 DOI: 10.1109/led.2024.3437352
William Hwang, Fen Xue, Ming-Yuan Song, Chen-Feng Hsu, T. C. Chen, Wilman Tsai, Xinyu Bao, Shan X. Wang
{"title":"Experimental Demonstration of Field-Free STT-Assisted SOT-MRAM (SAS-MRAM) with Four Bits per SOT Programming Line","authors":"William Hwang, Fen Xue, Ming-Yuan Song, Chen-Feng Hsu, T. C. Chen, Wilman Tsai, Xinyu Bao, Shan X. Wang","doi":"10.1109/led.2024.3437352","DOIUrl":"https://doi.org/10.1109/led.2024.3437352","url":null,"abstract":"","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":null,"pages":null},"PeriodicalIF":4.9,"publicationDate":"2024-08-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141883627","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Recessed Source Contact Technology to Reduce the Specific ON-Resistance of Power MOSFET on 4H-SiC 降低 4H-SiC 功率 MOSFET 特定导通电阻的凹陷源极触点技术
IF 4.9 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
IEEE Electron Device Letters
Pub Date : 2024-08-02 DOI: 10.1109/led.2024.3437372
Bing-Yue Tsui, Jui-Tse Hsiao, Ming-Han Wang, Chia-Lung Hung, Yi-Kai Hsiao, Jing-Neng Yao, Kuang-Hao Chiang, ChiaHua Ho, Hao-Chung Kuo
{"title":"A Recessed Source Contact Technology to Reduce the Specific ON-Resistance of Power MOSFET on 4H-SiC","authors":"Bing-Yue Tsui, Jui-Tse Hsiao, Ming-Han Wang, Chia-Lung Hung, Yi-Kai Hsiao, Jing-Neng Yao, Kuang-Hao Chiang, ChiaHua Ho, Hao-Chung Kuo","doi":"10.1109/led.2024.3437372","DOIUrl":"https://doi.org/10.1109/led.2024.3437372","url":null,"abstract":"","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":null,"pages":null},"PeriodicalIF":4.9,"publicationDate":"2024-08-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141883624","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Material choices for Tunnel Dielectric Layer and Gate Blocking Layer for Ferroelectric NAND Applications 铁电 NAND 应用中隧道介电层和栅极阻挡层的材料选择
IF 4.9 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
IEEE Electron Device Letters
Pub Date : 2024-08-02 DOI: 10.1109/led.2024.3437239
Lance Fernandes, Prasanna Venkatesan Ravindran, Taeyoung Song, Dipjyoti Das, Chinsung Park, Nashrah Afroze, Mengkun Tian, Hang Chen, Winston Chern, Kijoon Kim, Jongho Woo, Suhwan Lim, Kwangsoo Kim, Wanki Kim, Daewon Ha, Shimeng Yu, Suman Datta, Asif Khan
{"title":"Material choices for Tunnel Dielectric Layer and Gate Blocking Layer for Ferroelectric NAND Applications","authors":"Lance Fernandes, Prasanna Venkatesan Ravindran, Taeyoung Song, Dipjyoti Das, Chinsung Park, Nashrah Afroze, Mengkun Tian, Hang Chen, Winston Chern, Kijoon Kim, Jongho Woo, Suhwan Lim, Kwangsoo Kim, Wanki Kim, Daewon Ha, Shimeng Yu, Suman Datta, Asif Khan","doi":"10.1109/led.2024.3437239","DOIUrl":"https://doi.org/10.1109/led.2024.3437239","url":null,"abstract":"","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":null,"pages":null},"PeriodicalIF":4.9,"publicationDate":"2024-08-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141883626","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Highly Reliable and Sensitive Solar-Blind Ultraviolet and X-Ray Detector based on ALD Deposited Amorphous Ga2O3 基于 ALD 沉积非晶 Ga2O3 的高可靠、高灵敏度太阳盲紫外线和 X 射线探测器
IF 4.9 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
IEEE Electron Device Letters
Pub Date : 2024-08-02 DOI: 10.1109/led.2024.3437459
Zhan Wang, Xinyuan Wang, Yan Ma, Jing Sun, Shaoqing Wang, Yifan Jia, Yunlong He, Xiaoli Lu, Danmei Lin, Qing Zhu, Yuequn Shang, Lang Liu, Haifeng Chen, Xiaohua Ma
{"title":"Highly Reliable and Sensitive Solar-Blind Ultraviolet and X-Ray Detector based on ALD Deposited Amorphous Ga2O3","authors":"Zhan Wang, Xinyuan Wang, Yan Ma, Jing Sun, Shaoqing Wang, Yifan Jia, Yunlong He, Xiaoli Lu, Danmei Lin, Qing Zhu, Yuequn Shang, Lang Liu, Haifeng Chen, Xiaohua Ma","doi":"10.1109/led.2024.3437459","DOIUrl":"https://doi.org/10.1109/led.2024.3437459","url":null,"abstract":"","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":null,"pages":null},"PeriodicalIF":4.9,"publicationDate":"2024-08-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141883625","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Ge n-Channel Hybrid Memory Based on Ferroelectric Charge Trapping Layer with Low Operating Voltage, Large Memory Window and Negligible Read Latency 基于铁电电荷捕获层的 Ge n 沟道混合存储器具有低工作电压、大存储窗口和可忽略的读取延迟
IF 4.9 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
IEEE Electron Device Letters
Pub Date : 2024-08-01 DOI: 10.1109/led.2024.3437186
Yi-Fan Chen, Kai-Yang Huang, Chun-Yi Kuo, Yung-Hsien Wu
{"title":"Ge n-Channel Hybrid Memory Based on Ferroelectric Charge Trapping Layer with Low Operating Voltage, Large Memory Window and Negligible Read Latency","authors":"Yi-Fan Chen, Kai-Yang Huang, Chun-Yi Kuo, Yung-Hsien Wu","doi":"10.1109/led.2024.3437186","DOIUrl":"https://doi.org/10.1109/led.2024.3437186","url":null,"abstract":"","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":null,"pages":null},"PeriodicalIF":4.9,"publicationDate":"2024-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141883501","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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