Thermal effects and stress play important roles in both performance and reliability of GaN-based laser diodes, particularly in multi-ridge lasers designed for high-power applications. In this paper, we studied the temperature and stress distributions within a five-ridge GaN-based laser diode. In the cross-ridge direction, the laser chip with a ridge spacing configuration of 64-76-76-$64~mu $ m exhibited the best temperature uniformity while an isometric ridge spacing of $60~mu $ m demonstrated the best stress uniformity. Furthermore, we proposed a tapered heatsink design to enhance the temperature and stress uniformity along the ridge. Our results indicated that, in comparison with the conventional structure, the tapered heatsink reduced the temperature difference along the ridge by 59%, leading to relatively lower temperature at both facets. Additionally, the tapered heatsink reduced the average stress by 26%. This study provides theoretical foundations and practical guidelines for the thermal and stress design of semiconductor lasers.
{"title":"Thermal and Stress Analysis on Multi-Ridge GaN-Based Laser Diodes","authors":"Minghang Liang;Jiahao Dong;Yu He;Jingxian Liang;Pengyan Wen","doi":"10.1109/JQE.2025.3583998","DOIUrl":"https://doi.org/10.1109/JQE.2025.3583998","url":null,"abstract":"Thermal effects and stress play important roles in both performance and reliability of GaN-based laser diodes, particularly in multi-ridge lasers designed for high-power applications. In this paper, we studied the temperature and stress distributions within a five-ridge GaN-based laser diode. In the cross-ridge direction, the laser chip with a ridge spacing configuration of 64-76-76-<inline-formula> <tex-math>$64~mu $ </tex-math></inline-formula> m exhibited the best temperature uniformity while an isometric ridge spacing of <inline-formula> <tex-math>$60~mu $ </tex-math></inline-formula> m demonstrated the best stress uniformity. Furthermore, we proposed a tapered heatsink design to enhance the temperature and stress uniformity along the ridge. Our results indicated that, in comparison with the conventional structure, the tapered heatsink reduced the temperature difference along the ridge by 59%, leading to relatively lower temperature at both facets. Additionally, the tapered heatsink reduced the average stress by 26%. This study provides theoretical foundations and practical guidelines for the thermal and stress design of semiconductor lasers.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"61 4","pages":"1-5"},"PeriodicalIF":2.1,"publicationDate":"2025-06-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144725205","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Performances of In0.75 Ga0.25 As focal plane arrays (FPAs) with an extended cutoff wavelength of $2.2~mu $ m are remarkably improved by largely increasing the overshooting composition of the linearly-grading Inx Al${}_{text {1-x}}$ As buffer layer. Zinc-diffused planar $640times 488$ FPAs with a pixel pitch of $23~mu $ m are fabricated on both the regular and the large overshooting epi-wafers with x=0.77 and x=0.85 for the end compositions of the linearly-grading Inx Al${}_{text {1-x}}$ As, respectively. An order of magnitude lower dark current density of $1.1 times 10 ^{-10}$ A/cm2 is achieved at 150 K for the large overshooting FPAs when comparing with $2.1times 10 ^{-9}$ A/cm2 for the regular FPAs. Suppressed dark signal and dark noise voltages are observed simultaneously over the measured whole integration time range. Moreover, the measured non-uniformity of the light response signal voltage drastically dropped from 16.4% to 2.9% while the peak detectivity substantially jumped from $7.1 times 10 ^{12}$ to $1.8 times 10 ^{13}$ cmHz${}^{1/2}$ W−1. A signal to noise ratio enhanced laboratory imaging demonstration is also provided. These results suggest the large overshooting epitaxial technology can serve as a highly viable route for the lattice-mismatched Inx Ga${}_{text {1-x}}$ As FPAs towards further performance enhancement.
通过大幅度增加线性级配Inx Al ${}_{text {1-x}}$ As缓冲层的过冲成分，可以显著提高截止波长为$2.2~mu $ m的In0.75 Ga0.25 As焦平面阵列（fpa）的性能。在线性级配Inx Al ${}_{text {1-x}}$ As的末端成分x=0.77和x=0.85条件下，在常规和大过冲外延晶片上分别制备了像素间距为$23~ $ mu $ m的$640 × 488$平面fpa。与常规fpa的2.1 × 10 ^{-9}$ A/cm2相比，大过冲fpa在150k时的暗电流密度降低了一个数量级，为1.1 × 10 ^{-10}$ A/cm2。在测量的整个积分时间范围内，同时观察到被抑制的暗信号和暗噪声电压。此外，测量到的光响应信号电压的非均匀性从16.4%急剧下降到2.9%，而峰值探测率从$7.1 times 10 ^{12}$ cmHz ${}^{1/2}$ W−1大幅上升到$1.8 times 10 ^{13}$ cmHz ${}^{1/2}$ W−1。还提供了增强信噪比的实验室成像演示。这些结果表明，大过冲外延技术可以作为晶格不匹配的Inx Ga ${}_{text {1-x}}$ fpa进一步提高性能的高度可行的途径。
{"title":"Enhanced Performance of Extended Wavelength InxGa1–xAs Focal Plane Arrays via Compositional Overshooting of InxAl1–xAs Buffer Layer","authors":"Xiaojuan Chen;Bowen Liu;Jifeng Cheng;Liyi Yang;Runze Xia;Yingjie Ma;Xiumei Shao;Yi Gu;Xue Li;Haimei Gong;Jiaxiong Fang","doi":"10.1109/JQE.2025.3583238","DOIUrl":"https://doi.org/10.1109/JQE.2025.3583238","url":null,"abstract":"Performances of In0.75 Ga0.25 As focal plane arrays (FPAs) with an extended cutoff wavelength of <inline-formula> <tex-math>$2.2~mu $ </tex-math></inline-formula>m are remarkably improved by largely increasing the overshooting composition of the linearly-grading Inx Al<inline-formula> <tex-math>${}_{text {1-x}}$ </tex-math></inline-formula> As buffer layer. Zinc-diffused planar <inline-formula> <tex-math>$640times 488$ </tex-math></inline-formula> FPAs with a pixel pitch of <inline-formula> <tex-math>$23~mu $ </tex-math></inline-formula>m are fabricated on both the regular and the large overshooting epi-wafers with x=0.77 and x=0.85 for the end compositions of the linearly-grading Inx Al<inline-formula> <tex-math>${}_{text {1-x}}$ </tex-math></inline-formula> As, respectively. An order of magnitude lower dark current density of <inline-formula> <tex-math>$1.1 times 10 ^{-10}$ </tex-math></inline-formula> A/cm2 is achieved at 150 K for the large overshooting FPAs when comparing with <inline-formula> <tex-math>$2.1times 10 ^{-9}$ </tex-math></inline-formula> A/cm2 for the regular FPAs. Suppressed dark signal and dark noise voltages are observed simultaneously over the measured whole integration time range. Moreover, the measured non-uniformity of the light response signal voltage drastically dropped from 16.4% to 2.9% while the peak detectivity substantially jumped from <inline-formula> <tex-math>$7.1 times 10 ^{12}$ </tex-math></inline-formula> to <inline-formula> <tex-math>$1.8 times 10 ^{13}$ </tex-math></inline-formula> cmHz<inline-formula> <tex-math>${}^{1/2}$ </tex-math></inline-formula>W−1. A signal to noise ratio enhanced laboratory imaging demonstration is also provided. These results suggest the large overshooting epitaxial technology can serve as a highly viable route for the lattice-mismatched Inx Ga<inline-formula> <tex-math>${}_{text {1-x}}$ </tex-math></inline-formula> As FPAs towards further performance enhancement.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"61 4","pages":"1-7"},"PeriodicalIF":2.1,"publicationDate":"2025-06-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144725204","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-06-25DOI: 10.1109/JQE.2025.3583245
Yuanlong Fan;Jing Zhang;Teng Shi;K. Alan Shore
The response of semiconductor nano-lasers to frequency-modulated optical injection is studied theoretically. Such frequency modulation dynamically changes the detuning between the target slave laser and the injecting master laser. A comparison is also made of the behaviour of regular semiconductor lasers when subject to frequency-modulated optical injection. It is shown that both quantitatively and qualitatively different dynamical behaviours arise as the depth and frequency of the frequency modulation are changed. Such differences are revealed in the detail of the laser power spectra. A comparison is also made of the response of regular semiconductor lasers to frequency modulated optical injection where a range of behaviours is again made apparent via the power spectra. It is indicated that there is significant scope for further investigation of the phenomena revealed here.
{"title":"Frequency-Modulated Optical Injection Effects in Semiconductor Nano-Lasers","authors":"Yuanlong Fan;Jing Zhang;Teng Shi;K. Alan Shore","doi":"10.1109/JQE.2025.3583245","DOIUrl":"https://doi.org/10.1109/JQE.2025.3583245","url":null,"abstract":"The response of semiconductor nano-lasers to frequency-modulated optical injection is studied theoretically. Such frequency modulation dynamically changes the detuning between the target slave laser and the injecting master laser. A comparison is also made of the behaviour of regular semiconductor lasers when subject to frequency-modulated optical injection. It is shown that both quantitatively and qualitatively different dynamical behaviours arise as the depth and frequency of the frequency modulation are changed. Such differences are revealed in the detail of the laser power spectra. A comparison is also made of the response of regular semiconductor lasers to frequency modulated optical injection where a range of behaviours is again made apparent via the power spectra. It is indicated that there is significant scope for further investigation of the phenomena revealed here.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"61 4","pages":"1-6"},"PeriodicalIF":2.1,"publicationDate":"2025-06-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144725208","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-06-25DOI: 10.1109/JQE.2025.3583102
Kyo Inoue;Shogo Kitahara;Koji Igarashi
Coherent Ising machines (CIMs) are optical computers designed to solve combinatorial optimization problems based on the Ising model. Among several variants, the optical-loop-based CIM, which utilizes optical pulses with binary phases circulating in a loop equipped with a pulse-pumped phase-sensitive amplifier (PSA) and a measurement feedback circuit, has experimentally demonstrated high performance in terms of the number of pulses and connectivity. This study numerically investigates the dependence of its calculation performance on operating conditions such as the noise level, coupling strength between pulses, and PSA pump increment rate. The CIM solving Max-Cut problems is simulated using a difference equation based on a traveling-wave model under various operating conditions. The results indicate that noise is not a critical factor, there is an optimal condition for the coupling strength, depending on the graph structure, and slower pump-increment rate leads to higher scores. Under optimal conditions, the simulation produces better calculation results than those previously reported in an experimental study.
{"title":"Performance Dependence of Optical-Loop-Based Coherent Ising Machine on Operating Conditions","authors":"Kyo Inoue;Shogo Kitahara;Koji Igarashi","doi":"10.1109/JQE.2025.3583102","DOIUrl":"https://doi.org/10.1109/JQE.2025.3583102","url":null,"abstract":"Coherent Ising machines (CIMs) are optical computers designed to solve combinatorial optimization problems based on the Ising model. Among several variants, the optical-loop-based CIM, which utilizes optical pulses with binary phases circulating in a loop equipped with a pulse-pumped phase-sensitive amplifier (PSA) and a measurement feedback circuit, has experimentally demonstrated high performance in terms of the number of pulses and connectivity. This study numerically investigates the dependence of its calculation performance on operating conditions such as the noise level, coupling strength between pulses, and PSA pump increment rate. The CIM solving Max-Cut problems is simulated using a difference equation based on a traveling-wave model under various operating conditions. The results indicate that noise is not a critical factor, there is an optimal condition for the coupling strength, depending on the graph structure, and slower pump-increment rate leads to higher scores. Under optimal conditions, the simulation produces better calculation results than those previously reported in an experimental study.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"61 4","pages":"1-6"},"PeriodicalIF":2.1,"publicationDate":"2025-06-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144725206","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-06-16DOI: 10.1109/JQE.2025.3579731
Nobuhide Yokota;Hiroshi Yasaka
The optical negative-feedback laser monolithically integrated on an InP substrate for obtaining narrow linewidth is investigated. Optical negative feedback (ONF) induced by reflection of light from a Fabry-Perot (FP) resonator reduces linewidth of a distributed Bragg reflector (DBR) laser by 1/14 compared to that of a free-running DBR laser. The measured reflectivity of the fabricated ONF laser is compared to reflectivity simulated with an effective reflectivity model. It is demonstrated that control of the feedback phase is necessary to reduce linewidth by exploiting optical negative feedback. Linewidth is expected to be further reduced by using an FP resonator with a higher quality factor. It is also demonstrated that ONF lasers are compatible with fabrication in the InP foundry platform.
{"title":"Monolithically Integrated Narrow-Linewidth Optical-Negative-Feedback Lasers","authors":"Nobuhide Yokota;Hiroshi Yasaka","doi":"10.1109/JQE.2025.3579731","DOIUrl":"https://doi.org/10.1109/JQE.2025.3579731","url":null,"abstract":"The optical negative-feedback laser monolithically integrated on an InP substrate for obtaining narrow linewidth is investigated. Optical negative feedback (ONF) induced by reflection of light from a Fabry-Perot (FP) resonator reduces linewidth of a distributed Bragg reflector (DBR) laser by 1/14 compared to that of a free-running DBR laser. The measured reflectivity of the fabricated ONF laser is compared to reflectivity simulated with an effective reflectivity model. It is demonstrated that control of the feedback phase is necessary to reduce linewidth by exploiting optical negative feedback. Linewidth is expected to be further reduced by using an FP resonator with a higher quality factor. It is also demonstrated that ONF lasers are compatible with fabrication in the InP foundry platform.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"61 4","pages":"1-7"},"PeriodicalIF":2.1,"publicationDate":"2025-06-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144725202","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
We experimentally demonstrated a high-power 16-wavelength DFB laser array with 1.6 nm (200 GHz) channel spacing based on the asymmetric equivalent $pi $ phase shift ($pi $ -EPS). The $pi $ -EPS is positioned at 1/5 of the laser cavity length near the facet with a high-reflection (HR) coating, enhancing the yield of single longitudinal mode (SLM) operation. The measured channel spacing is 1.6 nm $pm ~0.1$ nm at a bias current of 250 mA. The array’s output power exceeds 120 mW for each channel at 400 mA. The SLM performance is achieved, with side mode suppression ratios (SMSRs) greater than 50 dB at room temperature. Furthermore, at 70 mA bias current, the relative intensity noise (RIN) remains below -160 dB/Hz. These results suggest that this laser array holds significant potential for large-scale silicon photonics applications. Therefore, the proposed laser array will be beneficial to the applications of large-scale silicon photonics.
{"title":"High-Power Multi-Wavelength Laser Array With Uniform Spacing Based on Asymmetric Equivalent π Phase Shift","authors":"Yuxin Ma;Yong Zhao;Zhenxing Sun;Ziming Hong;Cheng Peng;Zhenzhen Xu;Xin Wang;Lianping Hou;Yuechun Shi;Pu Li;Yuncai Wang;Xiangfei Chen","doi":"10.1109/JQE.2025.3577557","DOIUrl":"https://doi.org/10.1109/JQE.2025.3577557","url":null,"abstract":"We experimentally demonstrated a high-power 16-wavelength DFB laser array with 1.6 nm (200 GHz) channel spacing based on the asymmetric equivalent <inline-formula> <tex-math>$pi $ </tex-math></inline-formula> phase shift (<inline-formula> <tex-math>$pi $ </tex-math></inline-formula>-EPS). The <inline-formula> <tex-math>$pi $ </tex-math></inline-formula>-EPS is positioned at 1/5 of the laser cavity length near the facet with a high-reflection (HR) coating, enhancing the yield of single longitudinal mode (SLM) operation. The measured channel spacing is 1.6 nm <inline-formula> <tex-math>$pm ~0.1$ </tex-math></inline-formula> nm at a bias current of 250 mA. The array’s output power exceeds 120 mW for each channel at 400 mA. The SLM performance is achieved, with side mode suppression ratios (SMSRs) greater than 50 dB at room temperature. Furthermore, at 70 mA bias current, the relative intensity noise (RIN) remains below -160 dB/Hz. These results suggest that this laser array holds significant potential for large-scale silicon photonics applications. Therefore, the proposed laser array will be beneficial to the applications of large-scale silicon photonics.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"61 4","pages":"1-8"},"PeriodicalIF":2.1,"publicationDate":"2025-06-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144831790","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-06-06DOI: 10.1109/JQE.2025.3577472
Qing Meng;Jiasheng Fu;Zhongying Xue;Ziao Tian;Yan Cai;Miao Zhang;Zheng Wang;Zengfeng Di
Optical phase modulators are critical components in integrated photonic systems operating at visible wavelengths. However, current solutions to integrated optical phase modulators at visible wavelengths face challenges such as high insertion losses, large footprints, low bandwidth, and high-power consumption. In this work, we introduce a graphene-based integrated optical phase modulator designed for operation at 488 nm, implemented on silicon nitride photonic integrated circuits. This design aligns seamlessly with standard silicon photonic processes. The 3-dB bandwidth of the integrated optical phase modulator ranges from 3 GHz to 148 GHz depending on design and fabrication conditions, and a 74 GHz 3-dB bandwidth is considered achievable based on previously published results. Meanwhile, a modulation efficiency (quantified by the product of the $pi $ -phase shift voltage and length, $boldsymbol {V_{mathrm {pi }}L}$ ) of 0.13 V$cdot $ cm could be attained. Moreover, the modulator is capable of operating across the entire visible wavelength range. This investigation presents a compact, high-speed solution to integrated optical phase modulators at visible wavelengths, facilitating a broad range of applications in the visible spectrum.
{"title":"Graphene-Based Integrated Optical Phase Modulator at Visible Wavelengths","authors":"Qing Meng;Jiasheng Fu;Zhongying Xue;Ziao Tian;Yan Cai;Miao Zhang;Zheng Wang;Zengfeng Di","doi":"10.1109/JQE.2025.3577472","DOIUrl":"https://doi.org/10.1109/JQE.2025.3577472","url":null,"abstract":"Optical phase modulators are critical components in integrated photonic systems operating at visible wavelengths. However, current solutions to integrated optical phase modulators at visible wavelengths face challenges such as high insertion losses, large footprints, low bandwidth, and high-power consumption. In this work, we introduce a graphene-based integrated optical phase modulator designed for operation at 488 nm, implemented on silicon nitride photonic integrated circuits. This design aligns seamlessly with standard silicon photonic processes. The 3-dB bandwidth of the integrated optical phase modulator ranges from 3 GHz to 148 GHz depending on design and fabrication conditions, and a 74 GHz 3-dB bandwidth is considered achievable based on previously published results. Meanwhile, a modulation efficiency (quantified by the product of the <inline-formula> <tex-math>$pi $ </tex-math></inline-formula>-phase shift voltage and length, <inline-formula> <tex-math>$boldsymbol {V_{mathrm {pi }}L}$ </tex-math></inline-formula>) of 0.13 V<inline-formula> <tex-math>$cdot $ </tex-math></inline-formula>cm could be attained. Moreover, the modulator is capable of operating across the entire visible wavelength range. This investigation presents a compact, high-speed solution to integrated optical phase modulators at visible wavelengths, facilitating a broad range of applications in the visible spectrum.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"61 3","pages":"1-7"},"PeriodicalIF":2.2,"publicationDate":"2025-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144472549","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-06-05DOI: 10.1109/JQE.2025.3571567
{"title":"IEEE Journal of Quantum Electronics information for authors","authors":"","doi":"10.1109/JQE.2025.3571567","DOIUrl":"https://doi.org/10.1109/JQE.2025.3571567","url":null,"abstract":"","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"61 2","pages":"C3-C3"},"PeriodicalIF":2.2,"publicationDate":"2025-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11026767","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144219642","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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