Pub Date : 2024-03-01DOI: 10.1109/JQE.2024.3372580
William Bisson;Alexandre Michaud;Pascal Paradis;Réal Vallée;Martin Bernier
We propose an energy transfer model with a cubic atomic population dependence to accurately model the behavior of various reported high-power erbium-doped fluoride fiber lasers operating near 2.8 microns. We first show that the previously introduced weakly interacting (WI) and strongly interacting (SI) models are not adequate for precisely modeling such high-power erbium-doped fluoride fiber lasers. We compare results obtained with the WI and SI models to the proposed model by simulating 4 different highly doped (7 mol.%) fiber lasers previously reported in the literature. Laser efficiencies and powers are reproduced with great accuracy. In addition, four other fiber laser systems based on erbium concentrations varying from 1–6 mol.% are also simulated with good accuracy using the proposed model with the exact same set of spectroscopic parameters, which confirms its validity for various erbium doping concentrations. Redshifting of laser wavelength is also taken into account by considering the full cross section spectra and computing signal powers over several wavelength channels.
我们提出了一种具有立方原子群依赖性的能量传递模型，以精确模拟各种已报道的在 2.8 微米附近工作的高功率掺铒氟化物光纤激光器的行为。我们首先表明，之前引入的弱相互作用（WI）和强相互作用（SI）模型不足以精确模拟此类大功率掺铒氟化物光纤激光器。我们通过模拟先前在文献中报道的 4 种不同的高掺杂（7 mol.%）光纤激光器，将 WI 和 SI 模型获得的结果与所提出的模型进行了比较。激光效率和功率都得到了非常精确的再现。此外，使用所提出的模型和完全相同的光谱参数集，还精确地模拟了铒浓度为 1-6 摩尔%的其他四种光纤激光器系统，这证实了该模型对各种铒掺杂浓度的有效性。通过考虑全截面光谱和计算多个波长通道的信号功率，还考虑了激光波长的红移。
{"title":"Modeling the 3-Micron Class Er-Doped Fluoride Fiber Laser With a Cubic Energy Transfer Rate Dependence","authors":"William Bisson;Alexandre Michaud;Pascal Paradis;Réal Vallée;Martin Bernier","doi":"10.1109/JQE.2024.3372580","DOIUrl":"10.1109/JQE.2024.3372580","url":null,"abstract":"We propose an energy transfer model with a cubic atomic population dependence to accurately model the behavior of various reported high-power erbium-doped fluoride fiber lasers operating near 2.8 microns. We first show that the previously introduced weakly interacting (WI) and strongly interacting (SI) models are not adequate for precisely modeling such high-power erbium-doped fluoride fiber lasers. We compare results obtained with the WI and SI models to the proposed model by simulating 4 different highly doped (7 mol.%) fiber lasers previously reported in the literature. Laser efficiencies and powers are reproduced with great accuracy. In addition, four other fiber laser systems based on erbium concentrations varying from 1–6 mol.% are also simulated with good accuracy using the proposed model with the exact same set of spectroscopic parameters, which confirms its validity for various erbium doping concentrations. Redshifting of laser wavelength is also taken into account by considering the full cross section spectra and computing signal powers over several wavelength channels.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"60 2","pages":"1-9"},"PeriodicalIF":2.5,"publicationDate":"2024-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140018546","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A tapered fiber plasmon sensor with a tip angle of about 30 degrees was fabricated to realize optical absorption and application to an optical sensor using localized plasmon in the 1500 nm wavelength band. The sharp tip angle of a single-mode fiber (SMF) was well controlled by using a highly GeO2-doped single-mode fiber (SMF) and optimizing the etching conditions with buffered fluoric acid. Gold nanoparticles (Au-NPs) with a diameter of 40 nm were deposited by treating the surface of a tipped SMF with silane coupling. The relationship between Au NPs deposition time and deposition ratio was studied to control Au NPs distribution and pursue higher sensitivities. The wavelength sensitivity of 662 nm/RIU was expected at Au NPs deposition ratio of 34.9 % in the analysis, and actually a high sensitivity of 677 nm/RIU at 35.3 % was experimentally demonstrated.
{"title":"High Sensitivity Characteristics of Tapered Fiber Plasmon Sensor With Gold Nanoparticles in 1500 nm Wavelength Band","authors":"Masahiro Yamamoto;Tianpeng Ji;Aya Miyazaki;Yuichi Matsushima;Hiroshi Ishikawa;Katsuyuki Utaka","doi":"10.1109/JQE.2024.3366468","DOIUrl":"10.1109/JQE.2024.3366468","url":null,"abstract":"A tapered fiber plasmon sensor with a tip angle of about 30 degrees was fabricated to realize optical absorption and application to an optical sensor using localized plasmon in the 1500 nm wavelength band. The sharp tip angle of a single-mode fiber (SMF) was well controlled by using a highly GeO2-doped single-mode fiber (SMF) and optimizing the etching conditions with buffered fluoric acid. Gold nanoparticles (Au-NPs) with a diameter of 40 nm were deposited by treating the surface of a tipped SMF with silane coupling. The relationship between Au NPs deposition time and deposition ratio was studied to control Au NPs distribution and pursue higher sensitivities. The wavelength sensitivity of 662 nm/RIU was expected at Au NPs deposition ratio of 34.9 % in the analysis, and actually a high sensitivity of 677 nm/RIU at 35.3 % was experimentally demonstrated.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"60 3","pages":"1-7"},"PeriodicalIF":2.5,"publicationDate":"2024-02-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139946183","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A high-speed and high-power modified uni-traveling-carrier photodiode (MUTC-PD) is optimized and fabricated. The optimization method takes carrier transport as the core and considers the hole transport time limited bandwidth of the MUTC-PD for the first time. Taking into account the impact of the electron transport time and RC time constant on device performance, the device is simulated and fabricated. In structure epitaxy, it is proposed to use graded doping to fit Gaussian doping to reduce the epitaxial growth error. The measured bandwidth of the MUTC-PD reaches 34 GHz and the RF output power reaches 17.1 dBm with the mesa diameter of $20~mu text{m}$ . In addition, the influence of modulation depth on high-speed and high-power performance is studied.
{"title":"Bandwidth Optimization and Fabrication of High-Power MUTC-PD","authors":"Xuejie Wang;Yongqing Huang;Shuhu Tan;Jiawei Du;Mingxi Yang;Kai Liu;Xiaofeng Duan;Xiaomin Ren","doi":"10.1109/JQE.2024.3367951","DOIUrl":"10.1109/JQE.2024.3367951","url":null,"abstract":"A high-speed and high-power modified uni-traveling-carrier photodiode (MUTC-PD) is optimized and fabricated. The optimization method takes carrier transport as the core and considers the hole transport time limited bandwidth of the MUTC-PD for the first time. Taking into account the impact of the electron transport time and RC time constant on device performance, the device is simulated and fabricated. In structure epitaxy, it is proposed to use graded doping to fit Gaussian doping to reduce the epitaxial growth error. The measured bandwidth of the MUTC-PD reaches 34 GHz and the RF output power reaches 17.1 dBm with the mesa diameter of \u0000<inline-formula> <tex-math>$20~mu text{m}$ </tex-math></inline-formula>\u0000. In addition, the influence of modulation depth on high-speed and high-power performance is studied.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"60 2","pages":"1-6"},"PeriodicalIF":2.5,"publicationDate":"2024-02-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139946257","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-02-20DOI: 10.1109/JQE.2024.3367908
Alexander P. Bogatov;Alexander E. Drakin;Eugene A. Tsygankov;Maria I. Vaskovskaya;Dmitry S. Chuchelov;Kirill M. Sabakar;Vitaly V. Vassiliev;Sergey A. Zibrov;Vladimir L. Velichansky
We develop a self-consistent approach to calculate the spectra of the vertical-cavity surface-emitting lasers under a deep microwave modulation of the injection current. The treatment consists of solving a coupled system of equations for the concentration of electrons in the active medium and those for the amplitudes of spectral components derived from Maxwell’s equations. Their numerical solution demonstrates the specific asymmetry of experimental laser spectra under microwave modulation of the injection current. The presented method also accounts for the simultaneous modulation at multiple frequencies. We demonstrate that the laser spectrum can be controlled to some extent, namely, its carrier can be suppressed and the ratio of the first sidebands powers can be simultaneously changed by additional modulation of the injection current at doubled frequency. In addition, we show that the phase difference of these components is stable under variations of modulation parameters in a relatively wide range.
{"title":"Self-Consistent Approach for Calculation of VCSEL Spectra Under Deep Microwave Current Modulation","authors":"Alexander P. Bogatov;Alexander E. Drakin;Eugene A. Tsygankov;Maria I. Vaskovskaya;Dmitry S. Chuchelov;Kirill M. Sabakar;Vitaly V. Vassiliev;Sergey A. Zibrov;Vladimir L. Velichansky","doi":"10.1109/JQE.2024.3367908","DOIUrl":"10.1109/JQE.2024.3367908","url":null,"abstract":"We develop a self-consistent approach to calculate the spectra of the vertical-cavity surface-emitting lasers under a deep microwave modulation of the injection current. The treatment consists of solving a coupled system of equations for the concentration of electrons in the active medium and those for the amplitudes of spectral components derived from Maxwell’s equations. Their numerical solution demonstrates the specific asymmetry of experimental laser spectra under microwave modulation of the injection current. The presented method also accounts for the simultaneous modulation at multiple frequencies. We demonstrate that the laser spectrum can be controlled to some extent, namely, its carrier can be suppressed and the ratio of the first sidebands powers can be simultaneously changed by additional modulation of the injection current at doubled frequency. In addition, we show that the phase difference of these components is stable under variations of modulation parameters in a relatively wide range.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"60 2","pages":"1-8"},"PeriodicalIF":2.5,"publicationDate":"2024-02-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139946262","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-02-14DOI: 10.1109/JQE.2024.3366470
Mikhail A. Shevchenko;Sofia F. Umanskaya;Konstantin I. Zemskov;Nikolay V. Tcherniega;Anna D. Kudryavtseva
In this work, for the first time, the property of particles to form close-packed layer in front of the freezing interface was used to increase the luminescent efficiency response for ruby and titanium-sapphire microcrystals water suspensions. An increase in the efficiency of luminescence response due to an increase in the concentration of particles at the freezing front, can be used for phase transition sensing. In addition, particles packing by freezing method can be used for tuning random laser generation or increasing the efficiency of different nonlinear optical effects in suspensions of particles.
{"title":"Freezing the Suspension of Laser Microcrystals—A New Way for Increasing the Luminescence Efficiency Response","authors":"Mikhail A. Shevchenko;Sofia F. Umanskaya;Konstantin I. Zemskov;Nikolay V. Tcherniega;Anna D. Kudryavtseva","doi":"10.1109/JQE.2024.3366470","DOIUrl":"10.1109/JQE.2024.3366470","url":null,"abstract":"In this work, for the first time, the property of particles to form close-packed layer in front of the freezing interface was used to increase the luminescent efficiency response for ruby and titanium-sapphire microcrystals water suspensions. An increase in the efficiency of luminescence response due to an increase in the concentration of particles at the freezing front, can be used for phase transition sensing. In addition, particles packing by freezing method can be used for tuning random laser generation or increasing the efficiency of different nonlinear optical effects in suspensions of particles.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"60 2","pages":"1-5"},"PeriodicalIF":2.5,"publicationDate":"2024-02-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139946182","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-02-13DOI: 10.1109/JQE.2024.3365649
Ting Xue;Jianliang Huang;Yanhua Zhang;Wenquan Ma
We report on mid-wave infrared InAsSb photodetectors with high-barrier materials implemented in the depletion region. The devices exhibit promising performance at high temperature. At 160 K, the 50% cutoff wavelength is $4.18~mu text{m}$ , and the shot noise limited detectivity $D^{star} $ is $1.57times 10 ^{12}$ cm $cdot $ Hz $^{1/2}$ /W for the peak wavelength of $3.79~mu text{m}$ . At 300 K, the 50% cutoff wavelength is $4.70~mu text{m}$ , and the $D^{star} $ is $4.87times 10 ^{9}$ cm $cdot $ Hz $^{1/2}$ /W for the peak response wavelength of $4.15~mu text{m}$ . The dark current of the device is found to be dominated by the diffusion current rather than the generation-recombination current for the temperature range of 160–300 K. We also determine the Varshni parameters of the InAsSb material with varying strain, and the bandgap bowing parameters.
{"title":"High Temperature Mid-Wave Infrared InAsSb Barrier Photodetectors","authors":"Ting Xue;Jianliang Huang;Yanhua Zhang;Wenquan Ma","doi":"10.1109/JQE.2024.3365649","DOIUrl":"10.1109/JQE.2024.3365649","url":null,"abstract":"We report on mid-wave infrared InAsSb photodetectors with high-barrier materials implemented in the depletion region. The devices exhibit promising performance at high temperature. At 160 K, the 50% cutoff wavelength is \u0000<inline-formula> <tex-math>$4.18~mu text{m}$ </tex-math></inline-formula>\u0000, and the shot noise limited detectivity \u0000<inline-formula> <tex-math>$D^{star} $ </tex-math></inline-formula>\u0000 is \u0000<inline-formula> <tex-math>$1.57times 10 ^{12}$ </tex-math></inline-formula>\u0000 cm\u0000<inline-formula> <tex-math>$cdot $ </tex-math></inline-formula>\u0000Hz\u0000<inline-formula> <tex-math>$^{1/2}$ </tex-math></inline-formula>\u0000/W for the peak wavelength of \u0000<inline-formula> <tex-math>$3.79~mu text{m}$ </tex-math></inline-formula>\u0000. At 300 K, the 50% cutoff wavelength is \u0000<inline-formula> <tex-math>$4.70~mu text{m}$ </tex-math></inline-formula>\u0000, and the \u0000<inline-formula> <tex-math>$D^{star} $ </tex-math></inline-formula>\u0000 is \u0000<inline-formula> <tex-math>$4.87times 10 ^{9}$ </tex-math></inline-formula>\u0000 cm\u0000<inline-formula> <tex-math>$cdot $ </tex-math></inline-formula>\u0000Hz\u0000<inline-formula> <tex-math>$^{1/2}$ </tex-math></inline-formula>\u0000/W for the peak response wavelength of \u0000<inline-formula> <tex-math>$4.15~mu text{m}$ </tex-math></inline-formula>\u0000. The dark current of the device is found to be dominated by the diffusion current rather than the generation-recombination current for the temperature range of 160–300 K. We also determine the Varshni parameters of the InAsSb material with varying strain, and the bandgap bowing parameters.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"60 2","pages":"1-4"},"PeriodicalIF":2.5,"publicationDate":"2024-02-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139946255","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-02-08DOI: 10.1109/JQE.2024.3364628
Linda J. Olafsen;Kyler A. Stephens;Daniella R. DeVries
In the above article [1] , Fig. 7(b) duplicates Fig. 6(b). The correct Fig. 7(b) is shown as follows.
在上述文章[1]中，图 7(b)重复了图 6(b)。正确的图 7(b) 如下所示。
{"title":"Corrections to “Optical Pumping and Electrical Injection of a 3.6 μm Interband Cascade Laser”","authors":"Linda J. Olafsen;Kyler A. Stephens;Daniella R. DeVries","doi":"10.1109/JQE.2024.3364628","DOIUrl":"https://doi.org/10.1109/JQE.2024.3364628","url":null,"abstract":"In the above article \u0000<xref>[1]</xref>\u0000, \u0000<xref>Fig. 7(b)</xref>\u0000 duplicates Fig. 6(b). The correct \u0000<xref>Fig. 7(b)</xref>\u0000 is shown as follows.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"60 2","pages":"1-1"},"PeriodicalIF":2.5,"publicationDate":"2024-02-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139916565","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-02-05DOI: 10.1109/JQE.2024.3357031
Gaowen Chen;Fujuan Huang;Xiupu Zhang
Quantum dot (QD) devices are usually desired to have a broadband gain spectrum. An alternative solution to achieve a broadband gain in QD devices is to use multiple layers with different QD heights, which are stacked vertically, i.e. a chirped QD structure in the active region. In the chirped stacked QD structure, the vertical strain and electron coupling effect have a significant impact on the optical transition property and thus optical gain bandwidth. However, previous studies on the vertical coupling effect have mainly focused on uniformly stacked QD structures, and the chirped QD structures have not been investigated carefully. This work presents a detailed analysis of the vertical coupling effect in chirped QD structures (i.e. ascending and descending chirped structure) and its impact on the optical gain bandwidth of the active region. It is found that the descending chirped structure leads to a wider gain bandwidth, in particular at high current injection. A Fabry-Perot mode-locked laser with the descending chirped structure presents a better performance in pulse width and frequency comb lines compared to the ascending chirped structure.
{"title":"Vertical Coupling Effect on Gain Bandwidth of Chirped InAs/InP Quantum Dot Structures","authors":"Gaowen Chen;Fujuan Huang;Xiupu Zhang","doi":"10.1109/JQE.2024.3357031","DOIUrl":"https://doi.org/10.1109/JQE.2024.3357031","url":null,"abstract":"Quantum dot (QD) devices are usually desired to have a broadband gain spectrum. An alternative solution to achieve a broadband gain in QD devices is to use multiple layers with different QD heights, which are stacked vertically, i.e. a chirped QD structure in the active region. In the chirped stacked QD structure, the vertical strain and electron coupling effect have a significant impact on the optical transition property and thus optical gain bandwidth. However, previous studies on the vertical coupling effect have mainly focused on uniformly stacked QD structures, and the chirped QD structures have not been investigated carefully. This work presents a detailed analysis of the vertical coupling effect in chirped QD structures (i.e. ascending and descending chirped structure) and its impact on the optical gain bandwidth of the active region. It is found that the descending chirped structure leads to a wider gain bandwidth, in particular at high current injection. A Fabry-Perot mode-locked laser with the descending chirped structure presents a better performance in pulse width and frequency comb lines compared to the ascending chirped structure.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"60 2","pages":"1-9"},"PeriodicalIF":2.5,"publicationDate":"2024-02-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139744753","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-02-05DOI: 10.1109/JQE.2024.3362272
Jonas Schundelmeier;Quankui Yang;Stefan Hugger
We experimentally investigate mode hops of a continuous-wave (cw) external cavity (EC) quantum cascade laser (QCL) in Littrow configuration, observing hysteresis for variations of either external cavity length, chip current, or grating angle. The results are compared with two different theoretical models. Simulation results suggest that hysteresis in EC-QCLs is caused by self-stabilization due to mode coupling.
{"title":"Hysteresis Behavior of External Cavity Quantum Cascade Lasers in the Strong Feedback Regime","authors":"Jonas Schundelmeier;Quankui Yang;Stefan Hugger","doi":"10.1109/JQE.2024.3362272","DOIUrl":"10.1109/JQE.2024.3362272","url":null,"abstract":"We experimentally investigate mode hops of a continuous-wave (cw) external cavity (EC) quantum cascade laser (QCL) in Littrow configuration, observing hysteresis for variations of either external cavity length, chip current, or grating angle. The results are compared with two different theoretical models. Simulation results suggest that hysteresis in EC-QCLs is caused by self-stabilization due to mode coupling.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"60 2","pages":"1-10"},"PeriodicalIF":2.5,"publicationDate":"2024-02-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139946180","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Vertical-cavity surface-emitting lasers (VCSELs), featuring the advantages of low energy consumption, miniaturization, and high-beam quality, show potential for various applications from atomic clock to light detection and ranging (LiDAR). A high-performance atomic clock system requires laser linewidths below 10 MHz to ensure compatibility with the natural atomic linewidth (e.g., 5 MHz for cesium). However, the current prevalent method for reducing VCSEL linewidths relies on external cavities, which adds complexity and cost to the devices and hampers seamless integration into atomic clock systems. While narrow-linewidth VCSELs have been successfully demonstrated using extended cavities, there remains a need for a comprehensive and systematic study on the underlying design principles and optimization strategies. Here, we propose a VCSEL linewidth narrowing strategy enabled by internal-cavity engineering for cesium atomic clock applications. We investigate strategies to narrow the cold cavity linewidth without introducing additional optical round-trip loss. We provide a general approach to constructing the extended cavity (EC) and showcase the ability of manipulating the phase of light. To optimize the electrical properties, we explore variations in the extended layer thickness based on a monolithic VCSEL structure. We proposed an EC-VCSEL configuration with a theoretical laser spectral linewidth of approximately 1.7 MHz and a calculated output power of about 3 mW. Through exploiting gain-cavity offset, the EC-VCSEL exhibits a stable emission (894.6 nm) and a high gain of cavity mode ( $sim $ 4000 cm $^{-1}$ ) at high-temperature (e.g., 360 K). This work may serve as a reference for the realization of narrow-linewidth VCSELs, offering potential benefits in reducing device complexity and facilitating the system integration.
{"title":"Vertical-Cavity Surface-Emitting Laser Linewidth Narrowing Enabled by Internal-Cavity Engineering","authors":"Zhiting Tang;Chuanlin Li;Feiyun Zhao;Jilin Liu;Aobo Ren;Hongxing Xu;Jiang Wu","doi":"10.1109/JQE.2024.3362276","DOIUrl":"10.1109/JQE.2024.3362276","url":null,"abstract":"Vertical-cavity surface-emitting lasers (VCSELs), featuring the advantages of low energy consumption, miniaturization, and high-beam quality, show potential for various applications from atomic clock to light detection and ranging (LiDAR). A high-performance atomic clock system requires laser linewidths below 10 MHz to ensure compatibility with the natural atomic linewidth (e.g., 5 MHz for cesium). However, the current prevalent method for reducing VCSEL linewidths relies on external cavities, which adds complexity and cost to the devices and hampers seamless integration into atomic clock systems. While narrow-linewidth VCSELs have been successfully demonstrated using extended cavities, there remains a need for a comprehensive and systematic study on the underlying design principles and optimization strategies. Here, we propose a VCSEL linewidth narrowing strategy enabled by internal-cavity engineering for cesium atomic clock applications. We investigate strategies to narrow the cold cavity linewidth without introducing additional optical round-trip loss. We provide a general approach to constructing the extended cavity (EC) and showcase the ability of manipulating the phase of light. To optimize the electrical properties, we explore variations in the extended layer thickness based on a monolithic VCSEL structure. We proposed an EC-VCSEL configuration with a theoretical laser spectral linewidth of approximately 1.7 MHz and a calculated output power of about 3 mW. Through exploiting gain-cavity offset, the EC-VCSEL exhibits a stable emission (894.6 nm) and a high gain of cavity mode (\u0000<inline-formula> <tex-math>$sim $ </tex-math></inline-formula>\u00004000 cm\u0000<inline-formula> <tex-math>$^{-1}$ </tex-math></inline-formula>\u0000) at high-temperature (e.g., 360 K). This work may serve as a reference for the realization of narrow-linewidth VCSELs, offering potential benefits in reducing device complexity and facilitating the system integration.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"60 2","pages":"1-8"},"PeriodicalIF":2.5,"publicationDate":"2024-02-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139946553","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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