Pub Date : 2024-01-03DOI: 10.1109/JQE.2024.3349516
Dhiman Nag;Weiming Yao;Jos J. G. M. van der Tol
The balanced photodetector (BPD) is an important component for high-speed coherent receiver. An optimization strategy of waveguide-based multi-quantum well (MQW) BPDs, operating at 1550 nm is demonstrated on a generic InP platform. Design parameters of BPD are optimized towards achieving the highest bandwidth for a responsivity through an algorithm based on Particle Swarm Optimization (PSO). We do so by establishing an equivalent circuit model of BPD and analyzing its opto-electronic transfer function through numerical modelling. We address the major bottlenecks of high-speed BPDs: transit time of generated carriers and RC loading in our model. The algorithm is able to provide multiple combinations of design parameters with the same output characteristics. The design methodology to integrate laser with optimized BPD is presented to successfully implement a coherent receiver.
{"title":"Optimization of Balanced Detector for Coherent Receiver on Generic InP Platform by Particle Swarm Optimization","authors":"Dhiman Nag;Weiming Yao;Jos J. G. M. van der Tol","doi":"10.1109/JQE.2024.3349516","DOIUrl":"10.1109/JQE.2024.3349516","url":null,"abstract":"The balanced photodetector (BPD) is an important component for high-speed coherent receiver. An optimization strategy of waveguide-based multi-quantum well (MQW) BPDs, operating at 1550 nm is demonstrated on a generic InP platform. Design parameters of BPD are optimized towards achieving the highest bandwidth for a responsivity through an algorithm based on Particle Swarm Optimization (PSO). We do so by establishing an equivalent circuit model of BPD and analyzing its opto-electronic transfer function through numerical modelling. We address the major bottlenecks of high-speed BPDs: transit time of generated carriers and RC loading in our model. The algorithm is able to provide multiple combinations of design parameters with the same output characteristics. The design methodology to integrate laser with optimized BPD is presented to successfully implement a coherent receiver.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":null,"pages":null},"PeriodicalIF":2.5,"publicationDate":"2024-01-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10379816","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139946259","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-12-29DOI: 10.1109/JQE.2023.3348112
John A. Carlson;Fu-Chen Hsiao;Andrey Mironov;P. Scott Carney;John M. Dallesasse
The insertion of manganese into GaN-based p-i-n epitaxial structures allows for a ferromagnetic phase to occur at room temperature that can be photo-enhanced and retained for >8 hours. GaN p-i-n LED structures are implanted with manganese to form a ferromagnetic phase and illuminated with resonant photons across the GaN bandgap. The magnetization after illumination is found to increase by $0.2~mu _{B}$ /Mn atom. Subsequent illumination below the GaN:Mn bandgap is found to remove the photo-enhancement of magnetism and fully demagnetize the material. The optically-driven process confirms that photon absorption drives hole-media induced ferromagnetic changes to the top layer in GaN:Mn structures. A modified p-i-n structure is designed that situates a two-dimensional hole gas (2DHG) beneath the magnetic layer for improvement of the hole injection effect. The mid-gap state formed by the implanted manganese in GaN:Mn is simulated for two-photon electromagnetic induced transparency that can control the absorption of the top layer and moderate the hole injection. The design of GaN:Mn p-i-n structures is explored for spin-photon mapping of states for long-term storage in memory systems.
在基于氮化镓的 pi-n 外延结构中植入锰，可在室温下形成铁磁相，这种铁磁相可被光增强并保持 8 小时以上。在 GaN pi-n LED 结构中植入锰以形成铁磁相，并用跨 GaN 带隙的谐振光子进行照明。发现照明后的磁化率增加了 0.2~mu _{B}$ /锰原子。随后在氮化镓：锰带隙以下进行光照，可消除光增强磁性并使材料完全消磁。这一光学驱动过程证实，光子吸收驱动了 GaN:Mn 结构顶层的空穴介质诱导铁磁变化。为了改善空穴注入效应，我们设计了一种改进的 pi-n 结构，将二维空穴气体（2DHG）置于磁层之下。在 GaN:Mn 中植入锰形成的中隙态被模拟为双光子电磁诱导透明，它可以控制顶层的吸收并缓和空穴注入。探讨了 GaN:Mn pi-n 结构的自旋光子映射态设计，以用于存储器系统的长期存储。
{"title":"Photo-Enhanced Room Temperature Magnetism and Two-Photon Effects in Manganese-Implanted Gallium Nitride p-i-n Structures","authors":"John A. Carlson;Fu-Chen Hsiao;Andrey Mironov;P. Scott Carney;John M. Dallesasse","doi":"10.1109/JQE.2023.3348112","DOIUrl":"https://doi.org/10.1109/JQE.2023.3348112","url":null,"abstract":"The insertion of manganese into GaN-based p-i-n epitaxial structures allows for a ferromagnetic phase to occur at room temperature that can be photo-enhanced and retained for >8 hours. GaN p-i-n LED structures are implanted with manganese to form a ferromagnetic phase and illuminated with resonant photons across the GaN bandgap. The magnetization after illumination is found to increase by \u0000<inline-formula> <tex-math>$0.2~mu _{B}$ </tex-math></inline-formula>\u0000/Mn atom. Subsequent illumination below the GaN:Mn bandgap is found to remove the photo-enhancement of magnetism and fully demagnetize the material. The optically-driven process confirms that photon absorption drives hole-media induced ferromagnetic changes to the top layer in GaN:Mn structures. A modified p-i-n structure is designed that situates a two-dimensional hole gas (2DHG) beneath the magnetic layer for improvement of the hole injection effect. The mid-gap state formed by the implanted manganese in GaN:Mn is simulated for two-photon electromagnetic induced transparency that can control the absorption of the top layer and moderate the hole injection. The design of GaN:Mn p-i-n structures is explored for spin-photon mapping of states for long-term storage in memory systems.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":null,"pages":null},"PeriodicalIF":2.5,"publicationDate":"2023-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139399819","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-12-22DOI: 10.1109/JQE.2023.3345875
{"title":"2023 Index IEEE Journal of Quantum Electronics Vol.59","authors":"","doi":"10.1109/JQE.2023.3345875","DOIUrl":"10.1109/JQE.2023.3345875","url":null,"abstract":"","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":null,"pages":null},"PeriodicalIF":2.5,"publicationDate":"2023-12-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10372134","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139014895","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-12-13DOI: 10.1109/JQE.2023.3342180
Mattéo Chobé;Karim Hassan
We present a rate equation model for the simulation of quantum dot lasers focusing on modeling the thermal behavior of p-doped devices, which are known to exhibit a reduced temperature sensitivity. The simulation results are compared with experimental data from the literature to demonstrate the model accuracy and underline the impact of npp Auger recombination and intervalence band absorption on the high room-temperature characteristic temperature of p-doped lasers. Applying this model to membrane lasers featuring high optical confinement factors in small active regions due to the use of thin III-V stacks as compared to conventional lasers, we demonstrate the potential of such lasers for short-distance optical interconnects as high temperature (110 °C) operation is predicted for an optimized design, with submilliamp threshold up to 60 °C.
我们提出了一种用于模拟量子点激光器的速率方程模型，重点是模拟对掺杂器件的热行为，众所周知，对掺杂器件的温度敏感性较低。模拟结果与文献中的实验数据进行了比较，从而证明了模型的准确性，并强调了 npp 奥杰尔重组和间隔带吸收对 p 掺杂激光器高室温特性温度的影响。与传统激光器相比，薄膜激光器由于使用了薄的 III-V 叠层，因此在小有源区内具有高光学约束因子。我们将该模型应用于薄膜激光器，证明了这种激光器在短距离光互连方面的潜力，因为根据优化设计，这种激光器可在高温（110 °C）下工作，亚毫安阈值可高达 60 °C。
{"title":"Steady-State Semi-Analytical Modeling of p-Doped Quantum Dot Lasers Thermal Characteristics and Extrapolation to Membrane Lasers","authors":"Mattéo Chobé;Karim Hassan","doi":"10.1109/JQE.2023.3342180","DOIUrl":"https://doi.org/10.1109/JQE.2023.3342180","url":null,"abstract":"We present a rate equation model for the simulation of quantum dot lasers focusing on modeling the thermal behavior of p-doped devices, which are known to exhibit a reduced temperature sensitivity. The simulation results are compared with experimental data from the literature to demonstrate the model accuracy and underline the impact of npp Auger recombination and intervalence band absorption on the high room-temperature characteristic temperature of p-doped lasers. Applying this model to membrane lasers featuring high optical confinement factors in small active regions due to the use of thin III-V stacks as compared to conventional lasers, we demonstrate the potential of such lasers for short-distance optical interconnects as high temperature (110 °C) operation is predicted for an optimized design, with submilliamp threshold up to 60 °C.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":null,"pages":null},"PeriodicalIF":2.5,"publicationDate":"2023-12-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"138822194","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-11-29DOI: 10.1109/JQE.2023.3333157
{"title":"IEEE Journal of Quantum Electronics information for authors","authors":"","doi":"10.1109/JQE.2023.3333157","DOIUrl":"https://doi.org/10.1109/JQE.2023.3333157","url":null,"abstract":"","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":null,"pages":null},"PeriodicalIF":2.5,"publicationDate":"2023-11-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10334510","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"138468231","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-11-29DOI: 10.1109/JQE.2023.3333719
{"title":"TechRxiv: Share Your Preprint Research with the World!","authors":"","doi":"10.1109/JQE.2023.3333719","DOIUrl":"https://doi.org/10.1109/JQE.2023.3333719","url":null,"abstract":"","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":null,"pages":null},"PeriodicalIF":2.5,"publicationDate":"2023-11-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10334508","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"138468173","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-11-28DOI: 10.1109/JQE.2023.3337707
Chun Liu;Ming Xu;Chengjie Wang;Shengtao Chen;Jiahao Chang;Wenhao Wang
The photoconductive semiconductor switch (PCSS) is one of the most promising devices in pulsed power technology, and its transient output characteristics strongly depend on the internal photo-generated carrier transport. In this paper, the transient output characteristics of an opposed-contact GaAs PCSS are obtained at 3.0-5.35 kV at low-energy optical excitation. In contrast to the 8 ns optical pulse, the pulse width of the switching waveform is compressed to 2.2 ns, corresponding to a compression ratio of 72%. The electric field threshold of 38 kV/cm is verified for the pulse compression effect (PCE) in our experiment. The maximum output amplitude is 2.27 kV with a 660 ps rise time, and the relevant transmission efficiency is 43.7%. The transient electric field distribution of the GaAs PCSS at the bias voltage corresponding to the PCE is simulated by a two-dimension model. The influence of carrier transport on pulse compression is analyzed numerically during the spatiotemporal variation of the electric field. Results indicate that the PCE is attributed to the negative differential mobility (NDM) effect and the electric field shielding (EFS) effect. The characteristics of an ultrafast, compressed pulse, along with the increased output, provide the specific guidance for high-power applications at high repetition rates.
{"title":"Carrier Transport and Pulse Compression of an Opposed-Contact GaAs Photoconductive Switch at Low-Energy Optical Excitation","authors":"Chun Liu;Ming Xu;Chengjie Wang;Shengtao Chen;Jiahao Chang;Wenhao Wang","doi":"10.1109/JQE.2023.3337707","DOIUrl":"https://doi.org/10.1109/JQE.2023.3337707","url":null,"abstract":"The photoconductive semiconductor switch (PCSS) is one of the most promising devices in pulsed power technology, and its transient output characteristics strongly depend on the internal photo-generated carrier transport. In this paper, the transient output characteristics of an opposed-contact GaAs PCSS are obtained at 3.0-5.35 kV at low-energy optical excitation. In contrast to the 8 ns optical pulse, the pulse width of the switching waveform is compressed to 2.2 ns, corresponding to a compression ratio of 72%. The electric field threshold of 38 kV/cm is verified for the pulse compression effect (PCE) in our experiment. The maximum output amplitude is 2.27 kV with a 660 ps rise time, and the relevant transmission efficiency is 43.7%. The transient electric field distribution of the GaAs PCSS at the bias voltage corresponding to the PCE is simulated by a two-dimension model. The influence of carrier transport on pulse compression is analyzed numerically during the spatiotemporal variation of the electric field. Results indicate that the PCE is attributed to the negative differential mobility (NDM) effect and the electric field shielding (EFS) effect. The characteristics of an ultrafast, compressed pulse, along with the increased output, provide the specific guidance for high-power applications at high repetition rates.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":null,"pages":null},"PeriodicalIF":2.5,"publicationDate":"2023-11-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"138678716","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-11-28DOI: 10.1109/JQE.2023.3335246
Hang Shen;Chaoying Zhao
Realizing quantum micro-comb in micro-resonators has attracted continuous research effort. Kerr micro-combs generated from a micro-ring device can offer an enormous number of coherent wavelengths. The formation position of comb teeth (FPOCT) has been detected in experimental by the non-degenerate optical parametric oscillation OPO process. In this paper, we put forward a method for determining the FPOCT are suitable for both degenerate OPO process and non-degenerate OPO process. Based on second-order auto-correlation function $g^{({2})}(tau)$ , we give out a comprehensive analysis of FPOCT above and below the threshold. We provides a possible theoretical basis for the manipulation of the comb teeth. Our quantum dynamical explanations show good agreement with the experimental results.
{"title":"A Method for Determining the Formation Position of Comb Tooth of Kerr Micro-Ring","authors":"Hang Shen;Chaoying Zhao","doi":"10.1109/JQE.2023.3335246","DOIUrl":"https://doi.org/10.1109/JQE.2023.3335246","url":null,"abstract":"Realizing quantum micro-comb in micro-resonators has attracted continuous research effort. Kerr micro-combs generated from a micro-ring device can offer an enormous number of coherent wavelengths. The formation position of comb teeth (FPOCT) has been detected in experimental by the non-degenerate optical parametric oscillation OPO process. In this paper, we put forward a method for determining the FPOCT are suitable for both degenerate OPO process and non-degenerate OPO process. Based on second-order auto-correlation function \u0000<inline-formula> <tex-math>$g^{({2})}(tau)$ </tex-math></inline-formula>\u0000, we give out a comprehensive analysis of FPOCT above and below the threshold. We provides a possible theoretical basis for the manipulation of the comb teeth. Our quantum dynamical explanations show good agreement with the experimental results.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":null,"pages":null},"PeriodicalIF":2.5,"publicationDate":"2023-11-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"138822197","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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