To tackle the efficiency droop, we employed an epitaxial structure engineering approach and utilized SimuLED software to thoroughly investigate the influence of the quantum barrier (QB) thickness on the performance of Micro-LEDs, and delve into the corresponding carrier transport behavior. The results demonstrate that the effect of QB thickness on the performance of Micro-LEDs is closely related to injection current density. Within the current density range of 0–30 A/cm 2 , a thicker QB layer leads to a higher internal quantum efficiency (IQE) for Micro-LEDs. Conversely, when the current density is in the range of 30–100 A/cm 2 , employing a thinner QB layer in the LED structure can yield higher IQE values. In addition, this work suggests that tunneling effects and Quantum Confined Stark Effect (QCSE) dominate at different current densities, resulting in an opposite dependency of IQE on QB thickness. Furthermore, our findings indicate that adjusting QB thickness can significantly affect both the peak external quantum efficiency (EQE) and peak current density of Micro-LEDs.
{"title":"Correlation Between Recombination Dynamics and Quantum Barrier Thickness in InGaN-Based Micro-LEDs","authors":"Mengyue Mo;Ying Jiang;Penggang Li;Zhiqiang Liu;Xu Yang;Weifang Lu;Jinchai Li;Kai Huang;Junyong Kang;Rong Zhang","doi":"10.1109/JPHOT.2024.3506779","DOIUrl":"https://doi.org/10.1109/JPHOT.2024.3506779","url":null,"abstract":"To tackle the efficiency droop, we employed an epitaxial structure engineering approach and utilized SimuLED software to thoroughly investigate the influence of the quantum barrier (QB) thickness on the performance of Micro-LEDs, and delve into the corresponding carrier transport behavior. The results demonstrate that the effect of QB thickness on the performance of Micro-LEDs is closely related to injection current density. Within the current density range of 0–30 A/cm\u0000<sup>2</sup>\u0000, a thicker QB layer leads to a higher internal quantum efficiency (IQE) for Micro-LEDs. Conversely, when the current density is in the range of 30–100 A/cm\u0000<sup>2</sup>\u0000, employing a thinner QB layer in the LED structure can yield higher IQE values. In addition, this work suggests that tunneling effects and Quantum Confined Stark Effect (QCSE) dominate at different current densities, resulting in an opposite dependency of IQE on QB thickness. Furthermore, our findings indicate that adjusting QB thickness can significantly affect both the peak external quantum efficiency (EQE) and peak current density of Micro-LEDs.","PeriodicalId":13204,"journal":{"name":"IEEE Photonics Journal","volume":"17 1","pages":"1-7"},"PeriodicalIF":2.1,"publicationDate":"2024-11-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10767358","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142859261","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-11-27DOI: 10.1109/JPHOT.2024.3507802
Lihong Zhu;Wuling Liu;Jiahan Qin;Ye Shao;Shaoyang Tan;Jun Wang
The 7xx nm laser diode is the core pump source for Diode Pumped Alkali Vapor Laser (DPAL). For these applications, high power and narrow spectral width are essential. Traditional Fabry-Pérot (FP) diode lasers can provide high continuous output power, but their spectral width is too broad for many applications. By burying a Bragg grating within the semiconductor, a narrow and temperature-stable spectrum can be achieved. In this paper, we investigate the factors limiting the power enhancement of distributed feedback (DFB) lasers and characterize the grown gratings using transmission electron microscopy. We discuss the effects of grating coupling strength, wavelength detuning, and oxygen contamination in the grating region on performance. Under optimized growth conditions, a high-performance 780 nm DFB laser based on InGaAsP/InGaP gratings has been developed, achieving a continuous output power exceeding 10 W, which is the highest power for a 780 nm DFB laser to date. The spectral linewidth (FWHM) is less than 0.5 nm, and the device maintains locking across the entire operating current and a wide temperature range.
{"title":"High Power 780 nm Broad-Area DFB Laser With Narrow Spectral Width","authors":"Lihong Zhu;Wuling Liu;Jiahan Qin;Ye Shao;Shaoyang Tan;Jun Wang","doi":"10.1109/JPHOT.2024.3507802","DOIUrl":"https://doi.org/10.1109/JPHOT.2024.3507802","url":null,"abstract":"The 7xx nm laser diode is the core pump source for Diode Pumped Alkali Vapor Laser (DPAL). For these applications, high power and narrow spectral width are essential. Traditional Fabry-Pérot (FP) diode lasers can provide high continuous output power, but their spectral width is too broad for many applications. By burying a Bragg grating within the semiconductor, a narrow and temperature-stable spectrum can be achieved. In this paper, we investigate the factors limiting the power enhancement of distributed feedback (DFB) lasers and characterize the grown gratings using transmission electron microscopy. We discuss the effects of grating coupling strength, wavelength detuning, and oxygen contamination in the grating region on performance. Under optimized growth conditions, a high-performance 780 nm DFB laser based on InGaAsP/InGaP gratings has been developed, achieving a continuous output power exceeding 10 W, which is the highest power for a 780 nm DFB laser to date. The spectral linewidth (FWHM) is less than 0.5 nm, and the device maintains locking across the entire operating current and a wide temperature range.","PeriodicalId":13204,"journal":{"name":"IEEE Photonics Journal","volume":"17 1","pages":"1-6"},"PeriodicalIF":2.1,"publicationDate":"2024-11-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10769983","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142859255","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This paper presents a convolutional neural network (CNN) model, enhanced with the convolutional block attention module (CBAM), designed to accurately predict the beam quality factor M 2 , and numerical aperture (NA) of photonic crystal fibers. The integration of CBAM significantly improves the model's feature extraction capability by enabling it to focus on key features and filter out irrelevant information. Simulation results demonstrate that the model achieves a mean relative error of only 0.381% for M 2 and 2.293% for NA, outperforming convolutional models without attention mechanisms. With a prediction time of approximately 7 ms, the model allows for rapid and efficient predictions of M 2 and NA. Moreover, when the noise factor remains below 0.32, the model's prediction error shows minimal fluctuation, highlighting its robustness. Comparative experimental analysis further validates the model's effectiveness. This approach offers a reliable and efficient solution for fast, accurate measurement of M² and NA, with significant implications for the prediction and analysis of beam performance in various applications.
本文介绍了一种卷积神经网络（CNN）模型，该模型使用卷积块注意力模块（CBAM）进行增强，旨在准确预测光子晶体光纤的光束质量因子 M2 和数值孔径（NA）。CBAM 的集成大大提高了模型的特征提取能力，使其能够关注关键特征并过滤掉无关信息。仿真结果表明，该模型对 M2 的平均相对误差仅为 0.381%，对 NA 的平均相对误差仅为 2.293%，优于没有注意力机制的卷积模型。该模型的预测时间约为 7 毫秒，可以快速高效地预测 M2 和 NA。此外，当噪声系数保持在 0.32 以下时，模型的预测误差波动极小，凸显了其稳健性。对比实验分析进一步验证了该模型的有效性。这种方法为快速、精确测量 M² 和 NA 提供了可靠、高效的解决方案，对各种应用中梁性能的预测和分析具有重要意义。
{"title":"Practical and Accurate Evaluation of Numerical Aperture and Beam Quality Factor in Photonic Crystal Fibers by Mechanical Learning","authors":"Mengda Wei;Meisong Liao;Liang Chen;Yinpeng Liu;Wen Hu;Lidong Wang;Dongyu He;Tianxing Wang;Shizi Yu;Weiqing Gao","doi":"10.1109/JPHOT.2024.3506622","DOIUrl":"https://doi.org/10.1109/JPHOT.2024.3506622","url":null,"abstract":"This paper presents a convolutional neural network (CNN) model, enhanced with the convolutional block attention module (CBAM), designed to accurately predict the beam quality factor M\u0000<sup>2</sup>\u0000, and numerical aperture (NA) of photonic crystal fibers. The integration of CBAM significantly improves the model's feature extraction capability by enabling it to focus on key features and filter out irrelevant information. Simulation results demonstrate that the model achieves a mean relative error of only 0.381% for M\u0000<sup>2</sup>\u0000 and 2.293% for NA, outperforming convolutional models without attention mechanisms. With a prediction time of approximately 7 ms, the model allows for rapid and efficient predictions of M\u0000<sup>2</sup>\u0000 and NA. Moreover, when the noise factor remains below 0.32, the model's prediction error shows minimal fluctuation, highlighting its robustness. Comparative experimental analysis further validates the model's effectiveness. This approach offers a reliable and efficient solution for fast, accurate measurement of M² and NA, with significant implications for the prediction and analysis of beam performance in various applications.","PeriodicalId":13204,"journal":{"name":"IEEE Photonics Journal","volume":"17 1","pages":"1-8"},"PeriodicalIF":2.1,"publicationDate":"2024-11-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10767412","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142859257","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-11-25DOI: 10.1109/JPHOT.2024.3505913
Jingjing Wu;Zixuan Yang
In ghost imaging (GI) techniques, if the illumination patterns used in the reconstruction algorithm do not match that incident on the object's surface, the reconstructed image will be blurred. Here, we propose a computational GI system based on Bessel beams (Bessel-GI). Owing to the diffraction-free property of Bessel beams, Bessel-GI can image objects at different, unknown axial positions. It can also image multiple objects at various axial positions and axially moving objects. Specifically, the depth information of the objects can be reflected in the image size. A change in the object's position will scale the Bessel-GI imaging result, and we provide a theoretical analysis of the scale factor. The experimental results demonstrate the feasibility and utility of Bessel-GI, as well as the accuracy of the scaling factor obtained from the theoretical analysis. Bessel-GI has potential applications in moving object GI and 3D-GI. Additionally, the combination of Bessel-GI with microscopy imaging can be effectively applied to non-axial scanning microscopic GI techniques.
{"title":"Computational Ghost Imaging With Bessel Beam for Axial Objects","authors":"Jingjing Wu;Zixuan Yang","doi":"10.1109/JPHOT.2024.3505913","DOIUrl":"https://doi.org/10.1109/JPHOT.2024.3505913","url":null,"abstract":"In ghost imaging (GI) techniques, if the illumination patterns used in the reconstruction algorithm do not match that incident on the object's surface, the reconstructed image will be blurred. Here, we propose a computational GI system based on Bessel beams (Bessel-GI). Owing to the diffraction-free property of Bessel beams, Bessel-GI can image objects at different, unknown axial positions. It can also image multiple objects at various axial positions and axially moving objects. Specifically, the depth information of the objects can be reflected in the image size. A change in the object's position will scale the Bessel-GI imaging result, and we provide a theoretical analysis of the scale factor. The experimental results demonstrate the feasibility and utility of Bessel-GI, as well as the accuracy of the scaling factor obtained from the theoretical analysis. Bessel-GI has potential applications in moving object GI and 3D-GI. Additionally, the combination of Bessel-GI with microscopy imaging can be effectively applied to non-axial scanning microscopic GI techniques.","PeriodicalId":13204,"journal":{"name":"IEEE Photonics Journal","volume":"16 6","pages":"1-7"},"PeriodicalIF":2.1,"publicationDate":"2024-11-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10766930","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142761397","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Fixed-length segment (FLS) optimization method offers a way to realize the high-efficiency analog inverse design of nanophotonic devices. However, due to the limitation of the variable dimensions and restricted search space, this method can hard to simultaneously achieve large bandwidth, compact size, and efficient performance when dealing with high-dimension design. Here, we propose a highly efficient variable-length segment (VLS) based inverse design method, aiming to solve complex analog inverse design and fully demonstrate the targeted performance. It divides the optimized region into several tapered segments of unequal length and inserts a subwavelength transition waveguide between each tapered segment, which can expand the search space of the algorithm, thus making it easier to obtain a better locally optimal solution. As typical complex proof-of-concept examples, a 1 × 4 power splitter on a silicon-on-insulator (SOI) platform is chosen to demonstrate the validity of our design paradigm. The simulation results show that, compared with the conventional FLS, VLS has about 4–5 times higher efficiency and obtains better optimization performance. In our experiment, the fabricated device has a compact footprint of 9.8 μm × 4.9 μm and is complementary metal oxide semiconductor (CMOS) compatible. The measured insertion loss and the uniformity are less than 0.58 dB and 0.8 dB, respectively. In addition, the tolerances to fabrication errors are also investigated. Our work may find important applications in the advanced design of future nanoscale high-quality optical devices.
{"title":"Ultra-Compact 1 × 4 Optical Power Splitter Based on Variable-Length Segment Optimized Inverse Design","authors":"Yongchen Wang;Hangming Fan;Zhe Yuan;Junlin Pan;Longquan Dai;Qi Yang;Mengfan Cheng;Ming Tang;Deming Liu;Lei Deng","doi":"10.1109/JPHOT.2024.3505893","DOIUrl":"https://doi.org/10.1109/JPHOT.2024.3505893","url":null,"abstract":"Fixed-length segment (FLS) optimization method offers a way to realize the high-efficiency analog inverse design of nanophotonic devices. However, due to the limitation of the variable dimensions and restricted search space, this method can hard to simultaneously achieve large bandwidth, compact size, and efficient performance when dealing with high-dimension design. Here, we propose a highly efficient variable-length segment (VLS) based inverse design method, aiming to solve complex analog inverse design and fully demonstrate the targeted performance. It divides the optimized region into several tapered segments of unequal length and inserts a subwavelength transition waveguide between each tapered segment, which can expand the search space of the algorithm, thus making it easier to obtain a better locally optimal solution. As typical complex proof-of-concept examples, a 1 × 4 power splitter on a silicon-on-insulator (SOI) platform is chosen to demonstrate the validity of our design paradigm. The simulation results show that, compared with the conventional FLS, VLS has about 4–5 times higher efficiency and obtains better optimization performance. In our experiment, the fabricated device has a compact footprint of 9.8 μm × 4.9 μm and is complementary metal oxide semiconductor (CMOS) compatible. The measured insertion loss and the uniformity are less than 0.58 dB and 0.8 dB, respectively. In addition, the tolerances to fabrication errors are also investigated. Our work may find important applications in the advanced design of future nanoscale high-quality optical devices.","PeriodicalId":13204,"journal":{"name":"IEEE Photonics Journal","volume":"16 6","pages":"1-8"},"PeriodicalIF":2.1,"publicationDate":"2024-11-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10767169","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142777804","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Phosphorus-doped fiber has great advantages in supercontinuum (SC) generation because it can narrow the gap between Raman-related peaks and valleys owing to its special Raman gain. In this paper, a random fiber laser (RFL) structure and a main oscillator power amplifier (MOPA) structure are used to pump a self-made phosphorus-doped fiber. The results show that the output spectrum of the latter structure is more favorable in spectral flatness improvement. The 15 dB bandwidth covers from 690 nm to 2320 nm and the output power is 15.1 W. In the range of 1076 -2010 nm, the spectral intensity fluctuates within 3 dB. To the best of our knowledge, the spectral range and flatness are the best among SC generation based on phosphorus-doped fiber methods, which provide a solution for improving the spectral characteristics of the SC
{"title":"Flat Supercontinuum Generation From a Phosphorus-Doped Fiber","authors":"Kailong Li;Rui Song;Li Jiang;Zhiyong Pan;Zhiping Yan;Jing Hou","doi":"10.1109/JPHOT.2024.3504277","DOIUrl":"https://doi.org/10.1109/JPHOT.2024.3504277","url":null,"abstract":"Phosphorus-doped fiber has great advantages in supercontinuum (SC) generation because it can narrow the gap between Raman-related peaks and valleys owing to its special Raman gain. In this paper, a random fiber laser (RFL) structure and a main oscillator power amplifier (MOPA) structure are used to pump a self-made phosphorus-doped fiber. The results show that the output spectrum of the latter structure is more favorable in spectral flatness improvement. The 15 dB bandwidth covers from 690 nm to 2320 nm and the output power is 15.1 W. In the range of 1076 -2010 nm, the spectral intensity fluctuates within 3 dB. To the best of our knowledge, the spectral range and flatness are the best among SC generation based on phosphorus-doped fiber methods, which provide a solution for improving the spectral characteristics of the SC","PeriodicalId":13204,"journal":{"name":"IEEE Photonics Journal","volume":"16 6","pages":"1-6"},"PeriodicalIF":2.1,"publicationDate":"2024-11-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10759786","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142777727","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-11-20DOI: 10.1109/JPHOT.2024.3502671
Yuanyuan Liu;Feiyan Hu;Qingwen Liu
In digital holography, the sampling of the object wavefront is determined by the spatial resolution of the image sensors, which limits the angle range of the object wavefront. In this letter, we propose a recording structure for enlarging the detection angle in off-axis digital holography. Spatial angular multiplexing is realized by adding a small aperture in the object beam, and the spherical wave is employed as the reference light. The experiment result indicate that the new recording structure can achieve a range of 14.5 degrees, which exceeds four times the angular capacity of conventional optical path detection methods. This proposed angle-multiplexed recording technique has the potential to enhance the demand and applicability of large field of view measurements in digital holography.
{"title":"A Recording Structure for Extending the Detection Angle in Off-Axis Digital Holography","authors":"Yuanyuan Liu;Feiyan Hu;Qingwen Liu","doi":"10.1109/JPHOT.2024.3502671","DOIUrl":"https://doi.org/10.1109/JPHOT.2024.3502671","url":null,"abstract":"In digital holography, the sampling of the object wavefront is determined by the spatial resolution of the image sensors, which limits the angle range of the object wavefront. In this letter, we propose a recording structure for enlarging the detection angle in off-axis digital holography. Spatial angular multiplexing is realized by adding a small aperture in the object beam, and the spherical wave is employed as the reference light. The experiment result indicate that the new recording structure can achieve a range of 14.5 degrees, which exceeds four times the angular capacity of conventional optical path detection methods. This proposed angle-multiplexed recording technique has the potential to enhance the demand and applicability of large field of view measurements in digital holography.","PeriodicalId":13204,"journal":{"name":"IEEE Photonics Journal","volume":"16 6","pages":"1-5"},"PeriodicalIF":2.1,"publicationDate":"2024-11-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10758778","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142777851","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-11-20DOI: 10.1109/JPHOT.2024.3503287
Cameron M. Naraine;Batoul Hashemi;Niloofar Majidian Taleghani;Jocelyn N. Westwood-Bachman;Cameron Horvath;Bruno L. Segat Frare;Hamidu M. Mbonde;Pooya Torab Ahmadi;Kevin Setzer;Alexandria McKinlay;Khadijeh Miarabbas Kiani;Renjie Wang;Ponnambalam Ravi Selvaganapathy;Peter Mascher;Andrew P. Knights;Jens H. Schmid;Pavel Cheben;Mirwais Aktary;Jonathan D. B. Bradley
We describe a rapid prototyping process for silicon nitride photonic integrated circuits operating at wavelengths around 1.3 and 1.5 μm. Moderate confinement silicon nitride waveguides and other essential integrated photonic components, such as fiber-chip couplers, microring resonators, multimode interference-based 3-dB power splitters, and subwavelength grating metamaterial waveguides, were fabricated and characterized and are reported. The prototyping platform features a 400-nm-thick layer of silicon nitride grown via low-pressure chemical vapour deposition onto 4” silicon thermal oxide wafers and uses direct-write electron beam lithography to define single mode waveguide structures that exhibit losses of <1.3 dB/cm across the O-band (1260–1360 nm), <1.8 dB/cm across the S-band (1460–1530 nm), <1.6 dB/cm across the C-band (1530–1565 nm), and <0.7 dB/cm across the L-band (1565–1625 nm) for both transverse electric (TE) and transverse magnetic (TM) polarizations. The reported components were compiled into a process design kit to accompany the platform, which is commercially available through the NanoSOI Design Center operated by Applied Nanotools Inc. with five multi-project wafer runs per year that have fast turnaround times on the scale of weeks rather than months. This provides a route toward the rapid fabrication of silicon nitride chip-based passive and thermo-optic active photonic devices with critical resolution down to 120 nm, making it an attractive solution for entry-level designers, device innovators, and small companies looking to incorporate integrated silicon nitride circuits into early-stage applications of silicon photonics.
{"title":"A Moderate Confinement O-, S-, C-, and L-Band Silicon Nitride Platform Enabled by a Rapid Prototyping Integrated Photonics Foundry Process","authors":"Cameron M. Naraine;Batoul Hashemi;Niloofar Majidian Taleghani;Jocelyn N. Westwood-Bachman;Cameron Horvath;Bruno L. Segat Frare;Hamidu M. Mbonde;Pooya Torab Ahmadi;Kevin Setzer;Alexandria McKinlay;Khadijeh Miarabbas Kiani;Renjie Wang;Ponnambalam Ravi Selvaganapathy;Peter Mascher;Andrew P. Knights;Jens H. Schmid;Pavel Cheben;Mirwais Aktary;Jonathan D. B. Bradley","doi":"10.1109/JPHOT.2024.3503287","DOIUrl":"https://doi.org/10.1109/JPHOT.2024.3503287","url":null,"abstract":"We describe a rapid prototyping process for silicon nitride photonic integrated circuits operating at wavelengths around 1.3 and 1.5 μm. Moderate confinement silicon nitride waveguides and other essential integrated photonic components, such as fiber-chip couplers, microring resonators, multimode interference-based 3-dB power splitters, and subwavelength grating metamaterial waveguides, were fabricated and characterized and are reported. The prototyping platform features a 400-nm-thick layer of silicon nitride grown via low-pressure chemical vapour deposition onto 4” silicon thermal oxide wafers and uses direct-write electron beam lithography to define single mode waveguide structures that exhibit losses of <1.3 dB/cm across the O-band (1260–1360 nm), <1.8 dB/cm across the S-band (1460–1530 nm), <1.6 dB/cm across the C-band (1530–1565 nm), and <0.7 dB/cm across the L-band (1565–1625 nm) for both transverse electric (TE) and transverse magnetic (TM) polarizations. The reported components were compiled into a process design kit to accompany the platform, which is commercially available through the NanoSOI Design Center operated by Applied Nanotools Inc. with five multi-project wafer runs per year that have fast turnaround times on the scale of weeks rather than months. This provides a route toward the rapid fabrication of silicon nitride chip-based passive and thermo-optic active photonic devices with critical resolution down to 120 nm, making it an attractive solution for entry-level designers, device innovators, and small companies looking to incorporate integrated silicon nitride circuits into early-stage applications of silicon photonics.","PeriodicalId":13204,"journal":{"name":"IEEE Photonics Journal","volume":"16 6","pages":"1-15"},"PeriodicalIF":2.1,"publicationDate":"2024-11-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10758930","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142777752","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Efficient and high-fidelity polarization demosaicking is critical for the industrial applications of division of focal plane (DoFP) polarization imaging systems. However, existing methods often struggle to balance speed, accuracy, and complexity. This study introduces a novel polarization demosaicking algorithm that interpolates DoFP images within a three-stage basic demosaicking framework. Our method incorporates a DoFP low-cost edge-aware technique (DLE) to guide the interpolation process. Furthermore, inter-channel correlation is used to calibrate the initial estimate in the polarization difference domain. The proposed algorithm is available in both lightweight and full versions, designed for different application requirements. Experiments on simulated and real DoFP images demonstrated that both versions achieve the highestt interpolation accuracy and speed, respectively, among existing interpolation-based algorithms and significantly enhanced visuals. The lightweight and full versions efficiently processed a 1024 × 1024 image on an AMD Ryzen 5600X CPU in 0.1402s and 0.2693s, respectively. Additionally, as our methods operate within a 5 × 5 window, parallel acceleration on graphics processing units (GPUs) or field-programmable gate arrays (FPGAs) is highly feasible.
{"title":"Efficient Polarization Demosaicking Via Low-Cost Edge-Aware and Inter-Channel Correlation","authors":"Guangsen Liu;Peng Rao;Xin Chen;Yao Li;Haixin Jiang","doi":"10.1109/JPHOT.2024.3502117","DOIUrl":"https://doi.org/10.1109/JPHOT.2024.3502117","url":null,"abstract":"Efficient and high-fidelity polarization demosaicking is critical for the industrial applications of division of focal plane (DoFP) polarization imaging systems. However, existing methods often struggle to balance speed, accuracy, and complexity. This study introduces a novel polarization demosaicking algorithm that interpolates DoFP images within a three-stage basic demosaicking framework. Our method incorporates a DoFP low-cost edge-aware technique (DLE) to guide the interpolation process. Furthermore, inter-channel correlation is used to calibrate the initial estimate in the polarization difference domain. The proposed algorithm is available in both lightweight and full versions, designed for different application requirements. Experiments on simulated and real DoFP images demonstrated that both versions achieve the highestt interpolation accuracy and speed, respectively, among existing interpolation-based algorithms and significantly enhanced visuals. The lightweight and full versions efficiently processed a 1024 × 1024 image on an AMD Ryzen 5600X CPU in 0.1402s and 0.2693s, respectively. Additionally, as our methods operate within a 5 × 5 window, parallel acceleration on graphics processing units (GPUs) or field-programmable gate arrays (FPGAs) is highly feasible.","PeriodicalId":13204,"journal":{"name":"IEEE Photonics Journal","volume":"17 1","pages":"1-11"},"PeriodicalIF":2.1,"publicationDate":"2024-11-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10757400","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142905926","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In this study, we demonstrate a high-power ytterbium-doped fiber laser (YDFL) based on laser diodes (LDs) directly pumping scheme. Tandem pumping and LD direct pumping are two common schemes for generating high-brightness laser output in YDFL. Compared to tandem pumping, LD direct pumping scheme has prominent advantages such as high efficiency, small size, and low cost. Therefore, it has a significant competitive advantage in industrial applications. We report a 20.27 kW monolithic fiber amplifier with directly dual-wavelength LDs counter pumping. The fiber amplifier emitting at 1080 nm has an optical-to-optical efficiency of 84.8%. The Raman intensity is more than 50 dB lower than the signal light intensity. By optimizing the design of YDF and components, the output power and beam quality of the laser can be further enhanced.
{"title":"20 kW Monolithic Fiber Amplifier With Directly Dual-Wavelength Laser Diodes Counter Pumping","authors":"Xiangming Meng;Fengchang Li;Jinbao Chen;Xiaoming Xi;Baolai Yang;Peng Wang;Zhiyong Pan;Zhiping Yan;Hanwei Zhang;Xiaolin Wang;Zefeng Wang","doi":"10.1109/JPHOT.2024.3502166","DOIUrl":"https://doi.org/10.1109/JPHOT.2024.3502166","url":null,"abstract":"In this study, we demonstrate a high-power ytterbium-doped fiber laser (YDFL) based on laser diodes (LDs) directly pumping scheme. Tandem pumping and LD direct pumping are two common schemes for generating high-brightness laser output in YDFL. Compared to tandem pumping, LD direct pumping scheme has prominent advantages such as high efficiency, small size, and low cost. Therefore, it has a significant competitive advantage in industrial applications. We report a 20.27 kW monolithic fiber amplifier with directly dual-wavelength LDs counter pumping. The fiber amplifier emitting at 1080 nm has an optical-to-optical efficiency of 84.8%. The Raman intensity is more than 50 dB lower than the signal light intensity. By optimizing the design of YDF and components, the output power and beam quality of the laser can be further enhanced.","PeriodicalId":13204,"journal":{"name":"IEEE Photonics Journal","volume":"16 6","pages":"1-6"},"PeriodicalIF":2.1,"publicationDate":"2024-11-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10757396","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142777753","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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