Pub Date : 2025-01-14DOI: 10.1109/JPHOT.2025.3530086
Kang Wang;Hongyang Li;Zhuorui Zheng;Yi Liu;Ye Tian;Liwei Song
We propose and experimentally demonstrate a terahertz (THz) source based on optical rectification in lithium niobate wafers driven by an ultrafast ytterbium laser. Terahertz pulses with a repetition of 10 kHz and a spectrum of 0.1∼6 THz are generated via a collinear geometry. The phase-matching condition is analyzed and the effect of crystal thickness is investigated. Our study demonstrates a compact and stable source for terahertz spectroscopy and imaging applications.
{"title":"Collinear Terahertz Generation from LiNbO3 Wafer Driven by an Ultrafast Yb-Laser","authors":"Kang Wang;Hongyang Li;Zhuorui Zheng;Yi Liu;Ye Tian;Liwei Song","doi":"10.1109/JPHOT.2025.3530086","DOIUrl":"https://doi.org/10.1109/JPHOT.2025.3530086","url":null,"abstract":"We propose and experimentally demonstrate a terahertz (THz) source based on optical rectification in lithium niobate wafers driven by an ultrafast ytterbium laser. Terahertz pulses with a repetition of 10 kHz and a spectrum of 0.1∼6 THz are generated via a collinear geometry. The phase-matching condition is analyzed and the effect of crystal thickness is investigated. Our study demonstrates a compact and stable source for terahertz spectroscopy and imaging applications.","PeriodicalId":13204,"journal":{"name":"IEEE Photonics Journal","volume":"17 1","pages":"1-5"},"PeriodicalIF":2.1,"publicationDate":"2025-01-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10841949","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143106175","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-01-10DOI: 10.1109/JPHOT.2025.3528019
Liyue Zhang;Weijie Hong;Songsui Li;Wei Pan;Lianshan Yan;Bin Luo;Xihua Zou
The human brain can efficiently handle multiple tasks simultaneously, with the structural segregation of brain regions closely linked to their functional specialization. In this paper, we propose and experimentally demonstrate multifunctional photonic reservoir computing (MPRC), inspired by this biological characteristic. The neuron states of the photonic reservoir are divided into distinct sections for different tasks by the designing of input matrix, and only a set of output weight matrix, applicable to all tasks, is ultimately trained. Therefore, MPRC is capable of handling multiple tasks simultaneously with a fixed set of parameters, mitigating the tedious process of hyperparameter optimization. The influence of neuron partition size and operating parameters on MPRC performance is studied systematically. Furthermore, the generalizability of MPRC is validated by performing four different tasks simultaneously. Finally, our results are experimentally demonstrated using semiconductor lasers with a time-delay feedback loop.
{"title":"Multifunctional Photonic Reservoir Computing Based on Semiconductor Laser With Optical Feedback","authors":"Liyue Zhang;Weijie Hong;Songsui Li;Wei Pan;Lianshan Yan;Bin Luo;Xihua Zou","doi":"10.1109/JPHOT.2025.3528019","DOIUrl":"https://doi.org/10.1109/JPHOT.2025.3528019","url":null,"abstract":"The human brain can efficiently handle multiple tasks simultaneously, with the structural segregation of brain regions closely linked to their functional specialization. In this paper, we propose and experimentally demonstrate multifunctional photonic reservoir computing (MPRC), inspired by this biological characteristic. The neuron states of the photonic reservoir are divided into distinct sections for different tasks by the designing of input matrix, and only a set of output weight matrix, applicable to all tasks, is ultimately trained. Therefore, MPRC is capable of handling multiple tasks simultaneously with a fixed set of parameters, mitigating the tedious process of hyperparameter optimization. The influence of neuron partition size and operating parameters on MPRC performance is studied systematically. Furthermore, the generalizability of MPRC is validated by performing four different tasks simultaneously. Finally, our results are experimentally demonstrated using semiconductor lasers with a time-delay feedback loop.","PeriodicalId":13204,"journal":{"name":"IEEE Photonics Journal","volume":"17 1","pages":"1-7"},"PeriodicalIF":2.1,"publicationDate":"2025-01-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10836813","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143106177","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-01-08DOI: 10.1109/JPHOT.2025.3527537
Xing-Rui Ding;Zi-Hao Deng;Jia-Sheng Li;Rui-Xiang Qian;Bo-Wen Duan;Zong-Tao Li
The burgeoning advancements in Light Emitting Diode (LED) technology have opened avenues for applications beyond traditional display and lighting, notably in the realm of 3D printing. This study introduces a Local Dimming (LD) method that employs LED backlight technology to enhance the edge quality of Liquid Crystal Display (LCD) photocuring 3D printing (LPP). LPP, known for its rapid and cost-effective fabrication, faces challenges with light leakage and precision under high-power ultraviolet (UV) light. By locally adjusting the backlight array's brightness to conform to the digital mask's shape, this study effectively suppresses LCD light leakage and improves edge definition. A comprehensive investigation into the LD method's process parameters—exposure time, pixel compensation coefficient, and initial backlight calculation—reveals significant improvements in print quality. The LD method achieves up to an 81.56% enhancement in dimensional accuracy compared to the conventional full-backlight technique. This research not only addresses the intrinsic light leakage in LCDs but also facilitates the high-resolution printing of complex structures, thus expanding the utility of LED devices in additive manufacturing.
{"title":"Improving Edge Quality of Liquid Crystal Display 3D Printing Using Local Dimming Method","authors":"Xing-Rui Ding;Zi-Hao Deng;Jia-Sheng Li;Rui-Xiang Qian;Bo-Wen Duan;Zong-Tao Li","doi":"10.1109/JPHOT.2025.3527537","DOIUrl":"https://doi.org/10.1109/JPHOT.2025.3527537","url":null,"abstract":"The burgeoning advancements in Light Emitting Diode (LED) technology have opened avenues for applications beyond traditional display and lighting, notably in the realm of 3D printing. This study introduces a Local Dimming (LD) method that employs LED backlight technology to enhance the edge quality of Liquid Crystal Display (LCD) photocuring 3D printing (LPP). LPP, known for its rapid and cost-effective fabrication, faces challenges with light leakage and precision under high-power ultraviolet (UV) light. By locally adjusting the backlight array's brightness to conform to the digital mask's shape, this study effectively suppresses LCD light leakage and improves edge definition. A comprehensive investigation into the LD method's process parameters—exposure time, pixel compensation coefficient, and initial backlight calculation—reveals significant improvements in print quality. The LD method achieves up to an 81.56% enhancement in dimensional accuracy compared to the conventional full-backlight technique. This research not only addresses the intrinsic light leakage in LCDs but also facilitates the high-resolution printing of complex structures, thus expanding the utility of LED devices in additive manufacturing.","PeriodicalId":13204,"journal":{"name":"IEEE Photonics Journal","volume":"17 1","pages":"1-8"},"PeriodicalIF":2.1,"publicationDate":"2025-01-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10834600","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143106176","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-01-06DOI: 10.1109/JPHOT.2025.3526152
Jianhua Sang;Haoyu Huang;Liwei Song;Ye Tian;Ruxin Li
The application of electric fields induces changes in the symmetry of crystals, which can be observed spectroscopically as variations in the even harmonic generation. In this study, we report the ultrafast modulation of GaAs crystal symmetry using strong terahertz field. The modulation is recorded by the vibration of even harmonic intensity which depends on the polarization direction and instantaneous field strength of applied terahertz wave. The interference between intrinsic even-order nonlinearity and terahertz induced polarization is analyzed. This work offers a novel approach to determining key parameters, such as crystal orientation and terahertz field strength.
{"title":"Terahertz Modulation of Even-order Polarization in GaAs","authors":"Jianhua Sang;Haoyu Huang;Liwei Song;Ye Tian;Ruxin Li","doi":"10.1109/JPHOT.2025.3526152","DOIUrl":"https://doi.org/10.1109/JPHOT.2025.3526152","url":null,"abstract":"The application of electric fields induces changes in the symmetry of crystals, which can be observed spectroscopically as variations in the even harmonic generation. In this study, we report the ultrafast modulation of GaAs crystal symmetry using strong terahertz field. The modulation is recorded by the vibration of even harmonic intensity which depends on the polarization direction and instantaneous field strength of applied terahertz wave. The interference between intrinsic even-order nonlinearity and terahertz induced polarization is analyzed. This work offers a novel approach to determining key parameters, such as crystal orientation and terahertz field strength.","PeriodicalId":13204,"journal":{"name":"IEEE Photonics Journal","volume":"17 1","pages":"1-4"},"PeriodicalIF":2.1,"publicationDate":"2025-01-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10829706","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143106174","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-12-26DOI: 10.1109/JPHOT.2024.3523328
Jiarui Zhang;Yaxin Cai;Ming Fang
In turbid water environments, conventional polari-metric imaging descattering methods usually rely on selecting a non-target background region as a substitute for global back-ground light information, leading to image clarity. By integrating polarization imaging with the dark channel prior (DCP) and fully utilizing the polarization information from the Stokes vector and the DCP, the interference of the target information in calculating the background information can be effectively eliminated. This method also enables accurate estimation of the global distribution for the degree of polarization (DoP) and the angle of polarization (AoP) of the backscattered light and eliminates the need for the complex process of background region selection. Experimental results with varying turbid water concentrations demonstrate the proposed method's effectiveness for target recovery in both underwater images with and without background regions. Compared with the conventional active polarization imaging model, our method improves image contrast by 47% in the strongly scattering environment.
{"title":"Polarization Imaging Descattering Based on Dark Channel Prior Background Light Estimation","authors":"Jiarui Zhang;Yaxin Cai;Ming Fang","doi":"10.1109/JPHOT.2024.3523328","DOIUrl":"https://doi.org/10.1109/JPHOT.2024.3523328","url":null,"abstract":"In turbid water environments, conventional polari-metric imaging descattering methods usually rely on selecting a non-target background region as a substitute for global back-ground light information, leading to image clarity. By integrating polarization imaging with the dark channel prior (DCP) and fully utilizing the polarization information from the Stokes vector and the DCP, the interference of the target information in calculating the background information can be effectively eliminated. This method also enables accurate estimation of the global distribution for the degree of polarization (DoP) and the angle of polarization (AoP) of the backscattered light and eliminates the need for the complex process of background region selection. Experimental results with varying turbid water concentrations demonstrate the proposed method's effectiveness for target recovery in both underwater images with and without background regions. Compared with the conventional active polarization imaging model, our method improves image contrast by 47% in the strongly scattering environment.","PeriodicalId":13204,"journal":{"name":"IEEE Photonics Journal","volume":"17 1","pages":"1-9"},"PeriodicalIF":2.1,"publicationDate":"2024-12-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10816622","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142975939","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-12-25DOI: 10.1109/JPHOT.2024.3521615
Di Xin;Nihui Zhang;Lingqian Meng;Qinghao Zhao;Weiqiao Zhang;Fengxin Dong;Xuyan Zhou;Hongbo Zhang;Wanhua Zheng
Broad-area 976 nm semiconductor lasers have garnered widespread attention for their applications in generating high-power 488 nm blue laser light and as pump sources for solid-state and ytterbium-doped fiber lasers. Nevertheless, these lasers exhibit a wide gain bandwidth, short cavity length, and usually use the natural cleavage surface as the output window, resulting in a broad emitting spectrum in free-running state. We investigated a high-power narrow-linewidth 976 nm edge emitting broad area semiconductor laser (EEL) through external cavity feedback technology by employing a transmission grating as the dispersive element. This configuration achieved a high output power of 11 W and a spectral linewidth of 0.36 nm at 976 nm, corresponding to an intracavity power of 15.7 W. It provided a more flexible cavity structure for direct frequency doubling of the semiconductor laser to generate a high power of 488 nm blue laser.
{"title":"Spectra Narrowing of a 976 nm High Power External-Cavity Semiconductor Laser Based on a Transmission Grating","authors":"Di Xin;Nihui Zhang;Lingqian Meng;Qinghao Zhao;Weiqiao Zhang;Fengxin Dong;Xuyan Zhou;Hongbo Zhang;Wanhua Zheng","doi":"10.1109/JPHOT.2024.3521615","DOIUrl":"https://doi.org/10.1109/JPHOT.2024.3521615","url":null,"abstract":"Broad-area 976 nm semiconductor lasers have garnered widespread attention for their applications in generating high-power 488 nm blue laser light and as pump sources for solid-state and ytterbium-doped fiber lasers. Nevertheless, these lasers exhibit a wide gain bandwidth, short cavity length, and usually use the natural cleavage surface as the output window, resulting in a broad emitting spectrum in free-running state. We investigated a high-power narrow-linewidth 976 nm edge emitting broad area semiconductor laser (EEL) through external cavity feedback technology by employing a transmission grating as the dispersive element. This configuration achieved a high output power of 11 W and a spectral linewidth of 0.36 nm at 976 nm, corresponding to an intracavity power of 15.7 W. It provided a more flexible cavity structure for direct frequency doubling of the semiconductor laser to generate a high power of 488 nm blue laser.","PeriodicalId":13204,"journal":{"name":"IEEE Photonics Journal","volume":"17 1","pages":"1-6"},"PeriodicalIF":2.1,"publicationDate":"2024-12-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10814083","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142938197","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In GaN-based vertical-cavity surface-emitting lasers (VCSELs) with insulator-buried structure, the strong index guiding will introduce higher order modes. In this paper, we present a novel GaN-based VCSEL with a tapered SiO 2