Pub Date : 2024-08-05DOI: 10.1109/TNS.2024.3438615
J. Kampkötter;M. Karagounis;A. Grabmaier
This article presents a dc/dc converter that is built with stacked transistors in the power stage and is designed to operate at very high switching frequencies of 100 MHz. The converter can be powered with input voltages of 4.8 V and is capable of powering readout electronics with a voltage conversion factor of 4 in close proximity to the LHC beamline. The high switching frequency enables the use of small inductances of only 22 nH while delivering a maximum load current of 1 A. In addition, this article outlines linear regulators featuring stacked pass devices, designed for operation at supply voltages of up to 5.5 V. Notably, both circuits use thin gate-oxide transistors to mitigate the impact of total ionizing dose (TID). While thin gate-oxide transistors are typically used in applications with low supply voltages, transistor stacking is implemented to enable operation at higher input voltages. TID tolerance of up to 1 Grad(SiO2) has been demonstrated for the dc/dc converter and 610 Mrad(SiO2) for the linear regulators with stacked pass devices.
{"title":"Step-Down Converter With Stacked Core Transistors for the Innermost Layers of High-Luminosity High-Energy Physics Experiments","authors":"J. Kampkötter;M. Karagounis;A. Grabmaier","doi":"10.1109/TNS.2024.3438615","DOIUrl":"10.1109/TNS.2024.3438615","url":null,"abstract":"This article presents a dc/dc converter that is built with stacked transistors in the power stage and is designed to operate at very high switching frequencies of 100 MHz. The converter can be powered with input voltages of 4.8 V and is capable of powering readout electronics with a voltage conversion factor of 4 in close proximity to the LHC beamline. The high switching frequency enables the use of small inductances of only 22 nH while delivering a maximum load current of 1 A. In addition, this article outlines linear regulators featuring stacked pass devices, designed for operation at supply voltages of up to 5.5 V. Notably, both circuits use thin gate-oxide transistors to mitigate the impact of total ionizing dose (TID). While thin gate-oxide transistors are typically used in applications with low supply voltages, transistor stacking is implemented to enable operation at higher input voltages. TID tolerance of up to 1 Grad(SiO2) has been demonstrated for the dc/dc converter and 610 Mrad(SiO2) for the linear regulators with stacked pass devices.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"71 9","pages":"2056-2066"},"PeriodicalIF":1.9,"publicationDate":"2024-08-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141941169","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-08-02DOI: 10.1109/TNS.2024.3434380
Tatiana Nathaly Espinoza;David Walter;Kurtis D. Bartlett;Caleb Roecker;Richard Schirato;Andrew Hoover;Brian A. Larsen;Yongqiang Wang;Matthew R. Chancey;Adam A. Hecht
Scintillator detectors are an integral component of radiation detection systems for a variety of applications such as medical imaging, accelerator diagnostics, and space science. Typically, a scintillator detector’s response is characterized using gamma sources to understand the detection response to different types of radiation, including charged particle detection. However, there exists a nonlinearity of the amount of light produced from an incident gamma ray of specific energy and the light produced from an incident charged particle of the same energy. This important effect, known as quenching, must be accounted for to interpret energies from charged particles incident on detectors. In this article, we present results of quenching parameterization for two types of cerium-doped inorganic scintillators, Y2SiO5:Ce (YSO:Ce) and Gd3Al2Ga3O12:Ce (GAGG:Ce). We measured the light output from incident proton energies from 1 to 25 MeV using a 3-MV tandem accelerator and two reactions: Au(p,p)Au and 3He(d,p)⁴He. Using gamma-ray sources to calibrate the detectors, we compared the measured electron-equivalent energy versus the incident energy expected. Using an adaptation of the Birks semi-empirical formula, we extracted the Birks parameter (kB) to understand quenching. For one of the GAGG:Ce samples, the kB parameter of 0.0072 [g cm-2 MeV-1] is comparable to a similar study where the value of kB was 0.0065 [g cm-2 MeV-1]. For YSO:Ce, no other kB values were found in the literature. Three different types of GAGG:Ce were used to collect measurements of kB as a function of dopant concentration.
{"title":"Proton Quenching in Rare-Earth Inorganic Scintillators: GAGG:Ce and YSO:Ce","authors":"Tatiana Nathaly Espinoza;David Walter;Kurtis D. Bartlett;Caleb Roecker;Richard Schirato;Andrew Hoover;Brian A. Larsen;Yongqiang Wang;Matthew R. Chancey;Adam A. Hecht","doi":"10.1109/TNS.2024.3434380","DOIUrl":"10.1109/TNS.2024.3434380","url":null,"abstract":"Scintillator detectors are an integral component of radiation detection systems for a variety of applications such as medical imaging, accelerator diagnostics, and space science. Typically, a scintillator detector’s response is characterized using gamma sources to understand the detection response to different types of radiation, including charged particle detection. However, there exists a nonlinearity of the amount of light produced from an incident gamma ray of specific energy and the light produced from an incident charged particle of the same energy. This important effect, known as quenching, must be accounted for to interpret energies from charged particles incident on detectors. In this article, we present results of quenching parameterization for two types of cerium-doped inorganic scintillators, Y2SiO5:Ce (YSO:Ce) and Gd3Al2Ga3O12:Ce (GAGG:Ce). We measured the light output from incident proton energies from 1 to 25 MeV using a 3-MV tandem accelerator and two reactions: Au(p,p)Au and 3He(d,p)⁴He. Using gamma-ray sources to calibrate the detectors, we compared the measured electron-equivalent energy versus the incident energy expected. Using an adaptation of the Birks semi-empirical formula, we extracted the Birks parameter (kB) to understand quenching. For one of the GAGG:Ce samples, the kB parameter of 0.0072 [g cm-2 MeV-1] is comparable to a similar study where the value of kB was 0.0065 [g cm-2 MeV-1]. For YSO:Ce, no other kB values were found in the literature. Three different types of GAGG:Ce were used to collect measurements of kB as a function of dopant concentration.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"71 9","pages":"2102-2108"},"PeriodicalIF":1.9,"publicationDate":"2024-08-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10621705","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141884996","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-08-01DOI: 10.1109/TNS.2024.3436525
V. Sklyarchuk;O. Kopach;P. Fochuk;A. E. Bolotnikov;R. B. James
Diode structures, obtained by vacuum deposition of Al onto the surface of a p-Cd0.96Mn0.04Te0.96Se0.04 single crystals, have been manufactured and studied. Applying the Sah-Noyce–Shockley carrier generation-recombination model, a quantitative description of the electrical characteristics of diodes has been achieved. The resistivity of p-Cd0.96Mn0.04Te0.96Se0.04 crystals was equal to $rho ~approx ~400~Omega cdot text {cm}$ and was determined from the I–V characteristics of the structure with two ohmic contacts, which were obtained by chemical deposition of gold. The activation energy of the dark temperature dependence of resistivity $rho =rho (T)$ was equal to $Delta E approx 0.24$ eV. The forbidden gap of p-Cd0.96Mn0.04Te0.96Se0.04 crystals, found from the optical absorption spectra, was equal to $E_{g} =1.495$ eV.
{"title":"Electrophysical Properties of Cd₀.₉₆Mn₀.₀₄Te₀.₉₆Se₀.₀₄ Surface-Barrier Diodes","authors":"V. Sklyarchuk;O. Kopach;P. Fochuk;A. E. Bolotnikov;R. B. James","doi":"10.1109/TNS.2024.3436525","DOIUrl":"10.1109/TNS.2024.3436525","url":null,"abstract":"Diode structures, obtained by vacuum deposition of Al onto the surface of a p-Cd0.96Mn0.04Te0.96Se0.04 single crystals, have been manufactured and studied. Applying the Sah-Noyce–Shockley carrier generation-recombination model, a quantitative description of the electrical characteristics of diodes has been achieved. The resistivity of p-Cd0.96Mn0.04Te0.96Se0.04 crystals was equal to \u0000<inline-formula> <tex-math>$rho ~approx ~400~Omega cdot text {cm}$ </tex-math></inline-formula>\u0000 and was determined from the I–V characteristics of the structure with two ohmic contacts, which were obtained by chemical deposition of gold. The activation energy of the dark temperature dependence of resistivity \u0000<inline-formula> <tex-math>$rho =rho (T)$ </tex-math></inline-formula>\u0000 was equal to \u0000<inline-formula> <tex-math>$Delta E approx 0.24$ </tex-math></inline-formula>\u0000 eV. The forbidden gap of p-Cd0.96Mn0.04Te0.96Se0.04 crystals, found from the optical absorption spectra, was equal to \u0000<inline-formula> <tex-math>$E_{g} =1.495$ </tex-math></inline-formula>\u0000 eV.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"71 9","pages":"2189-2193"},"PeriodicalIF":1.9,"publicationDate":"2024-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141885108","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-08-01DOI: 10.1109/TNS.2024.3436597
E. N. Gomes;R. García Cozzi;M. Garcia-Inza;S. Carbonetto;M. V. Cassani;E. Redin;A. Faigón;L. Sambuco Salomone
The response of n-channel field-oxide field-effect transistors (FOXFETs) exposed to ionizing radiation and annealing is reproduced using a physics-based numerical model that includes the microscopic processes leading to hole capture/ neutralization and generation of interface traps. The results show that a distribution for the proton emission rate has to be considered to reproduce the threshold voltage evolution with dose, and density of interface traps trends at both short and long post-irradiation annealing times if direct release is considered as the mechanism responsible for proton production. This result may suggest a failure of the usual simple drift-diffusion model for proton transport across SiO2 in total dose models, or a limitation of our model based on some processes that were neglected in the first approach, such as hydrogen cracking as a secondary mechanism for proton production.
使用基于物理的数值模型再现了 n 沟道场氧化物场效应晶体管（FOXFET）暴露于电离辐射和退火后的反应，该模型包括导致空穴捕获/中和以及界面陷阱生成的微观过程。结果表明，如果认为直接释放是质子产生的机制，则必须考虑质子发射率的分布，以再现阈值电压随剂量的变化，以及辐照后短退火时间和长退火时间的界面陷阱密度趋势。这一结果可能表明，在总剂量模型中，质子在二氧化硅上传输的通常简单漂移-扩散模型失效了，或者说我们的模型存在局限性，因为在第一种方法中忽略了一些过程，例如作为质子产生次要机制的氢裂解。
{"title":"Numerical Modeling of Oxide and Interface Charge Buildup in Field Oxide Transistors During Irradiation and Annealing","authors":"E. N. Gomes;R. García Cozzi;M. Garcia-Inza;S. Carbonetto;M. V. Cassani;E. Redin;A. Faigón;L. Sambuco Salomone","doi":"10.1109/TNS.2024.3436597","DOIUrl":"10.1109/TNS.2024.3436597","url":null,"abstract":"The response of n-channel field-oxide field-effect transistors (FOXFETs) exposed to ionizing radiation and annealing is reproduced using a physics-based numerical model that includes the microscopic processes leading to hole capture/ neutralization and generation of interface traps. The results show that a distribution for the proton emission rate has to be considered to reproduce the threshold voltage evolution with dose, and density of interface traps trends at both short and long post-irradiation annealing times if direct release is considered as the mechanism responsible for proton production. This result may suggest a failure of the usual simple drift-diffusion model for proton transport across SiO2 in total dose models, or a limitation of our model based on some processes that were neglected in the first approach, such as hydrogen cracking as a secondary mechanism for proton production.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"71 9","pages":"2094-2101"},"PeriodicalIF":1.9,"publicationDate":"2024-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141885107","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
We describe a new modular cascaded H-bridge high power accelerator dipole magnet pulse power supply for the Heavy Ion Research Facility in Lanzhou-Cooler-Storage-Ring main ring (HIRFL-CSRm). The power supply consists of two branches connected in parallel, each of which consists of four 360 V/1800-A power units connected in series. Each power unit uses modular high power density voltage sources in parallel for the ac/dc converter and cascaded H-bridges for the dc/dc converter. In addition, digital control strategies are implemented. The voltage source modules adopt voltage and current dual closed-loop control, and the cascaded H-bridges use current dual closed-loop control with frequency-doubling modulation and cascaded multilevel control. The effectiveness of the proposed topology scheme and control strategies is confirmed through experiments, and the thermal stability of the power supply is verified through 72-h continuous output experiments.
我们描述了一种新型模块化级联 H 桥大功率加速器偶极磁体脉冲电源，用于兰州重离子研究装置-冷却器-存储环主环（HIRFL-CSRm）。该电源由两个并联的分支组成，每个分支由四个串联的 360 V/1800-A 功率单元组成。每个电源单元的交流/直流转换器使用并联的模块化高功率密度电压源，直流/交流转换器使用级联 H 桥。此外，还采用了数字控制策略。电压源模块采用电压和电流双闭环控制，级联 H 型电桥采用电流双闭环控制、倍频调制和级联多电平控制。通过实验证实了所提出的拓扑方案和控制策略的有效性，并通过 72 小时连续输出实验验证了电源的热稳定性。
{"title":"A Novel Modular Cascaded H-Bridge High-Power Accelerator Dipole Magnet Pulse Power Supply for HIRFL-CSRm","authors":"Cheng Han;Lijun Mao;Fengjun Wu;Yuzhen Huang;Yuan Li;Wanzeng Shen;Mengyan Sun;Xiaojun Wang;Yulian Tan;Daqing Gao;Hongbin Yan;Chaohua Zhu;Yonghua Deng","doi":"10.1109/TNS.2024.3436038","DOIUrl":"10.1109/TNS.2024.3436038","url":null,"abstract":"We describe a new modular cascaded H-bridge high power accelerator dipole magnet pulse power supply for the Heavy Ion Research Facility in Lanzhou-Cooler-Storage-Ring main ring (HIRFL-CSRm). The power supply consists of two branches connected in parallel, each of which consists of four 360 V/1800-A power units connected in series. Each power unit uses modular high power density voltage sources in parallel for the ac/dc converter and cascaded H-bridges for the dc/dc converter. In addition, digital control strategies are implemented. The voltage source modules adopt voltage and current dual closed-loop control, and the cascaded H-bridges use current dual closed-loop control with frequency-doubling modulation and cascaded multilevel control. The effectiveness of the proposed topology scheme and control strategies is confirmed through experiments, and the thermal stability of the power supply is verified through 72-h continuous output experiments.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"71 10","pages":"2198-2208"},"PeriodicalIF":1.9,"publicationDate":"2024-07-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141872699","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-29DOI: 10.1109/TNS.2024.3434338
Yu Lu;Xiaowu Cai;Jianying Dang;Xupeng Wang;Bo Li
This article investigates the degradation mechanism in dV/dt noise immunity robustness of traditional resistive load level shifters (LSs) under total-ionizing-dose (TID) irradiation and proposes a novel radiation-hardened nMOS-R cross-coupled (NRCC) LS with dV/dt noise immunity. When TID irradiation induces threshold voltage drift and increases the off-state leakage current in power devices, the proposed circuit employs a differential and complementary structure to counteract the degradation of electrical performance in both branches caused by the TID irradiation, thereby achieving improved radiation-hardening performance. Measurement results demonstrate that the proposed high-voltage gate drive integrated circuit (HVIC) with the novel LS level exhibits 130-V/ns noise immunity at the irradiation dose of 100 krad(Si). A normalization method is used to process measurement results for visual comparison. The degradation of dV/dt noise immunity capability of the proposed LS is improved by 26.8%, 72.4%, and 94.9% compared with the traditional LS at the irradiation dose of 30, 50, and 100 krad(Si). The HVIC is implemented using a 600-V silicon-on-insulator (SOI) BCD process.
本文研究了传统电阻负载电平转换器（LS）在全电离剂量（TID）辐照下的 dV/dt 噪声抗扰度稳健性退化机制，并提出了一种具有 dV/dt 噪声抗扰度的新型辐射加固 nMOS-R 交叉耦合（NRCC）LS。当 TID 辐照导致功率器件的阈值电压漂移和离态漏电流增加时，所提出的电路采用了一种差分互补结构，以抵消 TID 辐照造成的两个分支电气性能的下降，从而实现更好的辐射硬化性能。测量结果表明，采用新型 LS 电平的拟议高压栅极驱动集成电路（HVIC）在 100 krad(Si) 的辐照剂量下具有 130 V/ns 的抗噪能力。采用归一化方法处理测量结果，以便进行直观比较。在辐照剂量为 30、50 和 100 krad(Si)时，与传统 LS 相比，拟议 LS 的 dV/dt 抗噪能力分别提高了 26.8%、72.4% 和 94.9%。HVIC 采用 600 V 硅绝缘体 (SOI) BCD 工艺实现。
{"title":"A Novel Radiation-Hardened Level Shifter With dV/dt Noise Immunity for 600-V HVIC","authors":"Yu Lu;Xiaowu Cai;Jianying Dang;Xupeng Wang;Bo Li","doi":"10.1109/TNS.2024.3434338","DOIUrl":"10.1109/TNS.2024.3434338","url":null,"abstract":"This article investigates the degradation mechanism in dV/dt noise immunity robustness of traditional resistive load level shifters (LSs) under total-ionizing-dose (TID) irradiation and proposes a novel radiation-hardened nMOS-R cross-coupled (NRCC) LS with dV/dt noise immunity. When TID irradiation induces threshold voltage drift and increases the off-state leakage current in power devices, the proposed circuit employs a differential and complementary structure to counteract the degradation of electrical performance in both branches caused by the TID irradiation, thereby achieving improved radiation-hardening performance. Measurement results demonstrate that the proposed high-voltage gate drive integrated circuit (HVIC) with the novel LS level exhibits 130-V/ns noise immunity at the irradiation dose of 100 krad(Si). A normalization method is used to process measurement results for visual comparison. The degradation of dV/dt noise immunity capability of the proposed LS is improved by 26.8%, 72.4%, and 94.9% compared with the traditional LS at the irradiation dose of 30, 50, and 100 krad(Si). The HVIC is implemented using a 600-V silicon-on-insulator (SOI) BCD process.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"71 9","pages":"2086-2093"},"PeriodicalIF":1.9,"publicationDate":"2024-07-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141863119","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The large enriched germanium experiment for neutrinoless double beta decay (LEGEND) is a ton-scale experimental program to search for neutrinoless double beta ( $0nu beta beta $ ) decay in the isotope $^{76}textrm {Ge}$ by means of high-purity germanium (HPGe) detectors operated in liquid argon (LAr). The observation of $0nu beta beta $ decay would have major implications in the understanding of the origin of the matter in the universe and establish neutrinos as Majorana particles, i.e., their own antiparticles. In this framework, the LEGEND ultralow background integrated circuit for germanium detectors investigation (LUIGI) application-specific integrated circuit (ASIC) was designed. The ASIC technology enables the implementation of the whole charge sensitive amplifier (CSA) into a single low-mass chip. The LUIGI ASIC can play a key role to obtain good energy resolution (at 2039 keV, i.e., the $Q_{beta beta }$ value of the $^{76}textrm {Ge} ; beta beta $ -decay, a value of $2.49 ; pm ; 0.03,text {keV}$ full-width at half-maximum (FWHM) is obtained) and a high radiopurity which are the main requirements for the readout electronics in $0nu beta beta $ decay experiments. It was designed featuring a low-noise CSA and an ON-chip low-dropout (LDO) regulator. (At a shaping time of $6,mu $ s, an energy resolution at the noise peak of 500 eV FWHM is measured.) Two different versions of the CSA were implemented. The LUIGI-internal reset (IR) variant has a dedicated compensation network and implements an integrated large-value resistor through an ICON cell. Instead, the LUIGI-feedback resistor (RF) variant works with a large value external RF. The LDO makes it possible to power the chip without bypass capacitors, which are not compliant with the radiopurity requirement. A dedicated line driver circuit drives the signal in a differential way over a distance of about 10 m.
{"title":"Design and Characterization of a Low-Noise and Low-Background Charge Sensitive Amplifier for the Readout of Germanium Detectors","authors":"D. Butta;G. Borghi;M. Carminati;G. Ferrari;A. Gieb;F. Henkes;M. Willers;S. Mertens;S. Riboldi;C. Fiorini","doi":"10.1109/TNS.2024.3434345","DOIUrl":"10.1109/TNS.2024.3434345","url":null,"abstract":"The large enriched germanium experiment for neutrinoless double beta decay (LEGEND) is a ton-scale experimental program to search for neutrinoless double beta (\u0000<inline-formula> <tex-math>$0nu beta beta $ </tex-math></inline-formula>\u0000) decay in the isotope \u0000<inline-formula> <tex-math>$^{76}textrm {Ge}$ </tex-math></inline-formula>\u0000 by means of high-purity germanium (HPGe) detectors operated in liquid argon (LAr). The observation of \u0000<inline-formula> <tex-math>$0nu beta beta $ </tex-math></inline-formula>\u0000 decay would have major implications in the understanding of the origin of the matter in the universe and establish neutrinos as Majorana particles, i.e., their own antiparticles. In this framework, the LEGEND ultralow background integrated circuit for germanium detectors investigation (LUIGI) application-specific integrated circuit (ASIC) was designed. The ASIC technology enables the implementation of the whole charge sensitive amplifier (CSA) into a single low-mass chip. The LUIGI ASIC can play a key role to obtain good energy resolution (at 2039 keV, i.e., the \u0000<inline-formula> <tex-math>$Q_{beta beta }$ </tex-math></inline-formula>\u0000 value of the \u0000<inline-formula> <tex-math>$^{76}textrm {Ge} ; beta beta $ </tex-math></inline-formula>\u0000-decay, a value of \u0000<inline-formula> <tex-math>$2.49 ; pm ; 0.03,text {keV}$ </tex-math></inline-formula>\u0000 full-width at half-maximum (FWHM) is obtained) and a high radiopurity which are the main requirements for the readout electronics in \u0000<inline-formula> <tex-math>$0nu beta beta $ </tex-math></inline-formula>\u0000 decay experiments. It was designed featuring a low-noise CSA and an ON-chip low-dropout (LDO) regulator. (At a shaping time of \u0000<inline-formula> <tex-math>$6,mu $ </tex-math></inline-formula>\u0000s, an energy resolution at the noise peak of 500 eV FWHM is measured.) Two different versions of the CSA were implemented. The LUIGI-internal reset (IR) variant has a dedicated compensation network and implements an integrated large-value resistor through an ICON cell. Instead, the LUIGI-feedback resistor (RF) variant works with a large value external RF. The LDO makes it possible to power the chip without bypass capacitors, which are not compliant with the radiopurity requirement. A dedicated line driver circuit drives the signal in a differential way over a distance of about 10 m.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"71 9","pages":"2171-2179"},"PeriodicalIF":1.9,"publicationDate":"2024-07-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10613781","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141863226","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-29DOI: 10.1109/TNS.2024.3434398
Hanhan Sun;Zirui Wu;Deng Luo;Bin Liang;Jianjun Chen;Yaqing Chi
This article proposes a radiation-tolerant phase-locked loop (PLL) for space-based applications. The proportional and integral path is proposed to mitigate the single-event effects (SEEs) sensitivity. An LC-tank voltage-controlled oscillator (LC-VCO) with optimized varactors and a custom inductor achieves an 8.9–16.8 GHz tuning range and −108.62 dBc/Hz phase noise (PN) at a 1 MHz offset from a 16 GHz carrier. The custom dual interlocked cell (DICE)-based flip-flops and latches have been employed in phase frequency detector (PFD) and frequency divider chains to enhance SEE tolerance. The circuit is processed in sub-20 nm FinFET technology. The jitter measurements of the testing postdivided clock (3.2 GHz) are less than 700 fs and 2 ps for the random and deterministic jitters (Djs), respectively, when the VCO oscillates at 16 GHz. SEE sensitivities have been characterized by heavy ions with a linear energy transfer (LET) from 16.6 to 97.9 MeV/cm $^{2}cdot text { mg}$ and pulsed laser up to 1.8 nJ laser energy.
{"title":"Single-Event Effect Characterization of 16 GHz Phase-Locked Loop in Sub-20 nm FinFET Technology","authors":"Hanhan Sun;Zirui Wu;Deng Luo;Bin Liang;Jianjun Chen;Yaqing Chi","doi":"10.1109/TNS.2024.3434398","DOIUrl":"10.1109/TNS.2024.3434398","url":null,"abstract":"This article proposes a radiation-tolerant phase-locked loop (PLL) for space-based applications. The proportional and integral path is proposed to mitigate the single-event effects (SEEs) sensitivity. An LC-tank voltage-controlled oscillator (LC-VCO) with optimized varactors and a custom inductor achieves an 8.9–16.8 GHz tuning range and −108.62 dBc/Hz phase noise (PN) at a 1 MHz offset from a 16 GHz carrier. The custom dual interlocked cell (DICE)-based flip-flops and latches have been employed in phase frequency detector (PFD) and frequency divider chains to enhance SEE tolerance. The circuit is processed in sub-20 nm FinFET technology. The jitter measurements of the testing postdivided clock (3.2 GHz) are less than 700 fs and 2 ps for the random and deterministic jitters (Djs), respectively, when the VCO oscillates at 16 GHz. SEE sensitivities have been characterized by heavy ions with a linear energy transfer (LET) from 16.6 to 97.9 MeV/cm\u0000<inline-formula> <tex-math>$^{2}cdot text { mg}$ </tex-math></inline-formula>\u0000 and pulsed laser up to 1.8 nJ laser energy.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"71 9","pages":"2077-2085"},"PeriodicalIF":1.9,"publicationDate":"2024-07-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141863116","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-29DOI: 10.1109/TNS.2024.3434441
Christina Wang;Liyuan Zhang;Chen Hu;Ren-Yuan Zhu;Kranti Gunthoti;Michael Mocko;Steve Wender;Zhehui Wang
Inorganic scintillators are widely used in high-energy physics (HEP) experiments. Bright and fast cerium-doped lutetium yttrium oxyorthosilicate ( $text {Lu}_{2(1-x)}text {Y}_{2x}text {SiO}_{{5}}text {:Ce}$ or LYSO:Ce or LYSO) crystals are being used to construct the compact muon solenoid (CMS) barrel timing layer (BTL) detector at the high-luminosity large hadron collider (HL-LHC), where up to 2.5-Mrad ionization dose, $1.7 times 10^{13}$ charged hadrons/cm2, and $2 times 10^{14}~text {n}_{text {eq}}/text {cm}^{2}$ are expected. With an ultrafast scintillation of less than 0.6- ns decay time and a suppressed slow component, yttrium-doped barium fluoride (BaF2:Y) crystal is a promising ultrafast inorganic scintillator for future HEP time of flight and calorimeter applications at the energy and intensity frontiers. The 20-cm-long LYSO:Ce and BaF2:Y crystals were irradiated by 800-MeV proton beam at the blue room of Los Alamos Neutron Science Center (LANSCE) up to $7.5 times 10^{15}$ p/cm2. We report on the degradation of their optical and scintillation properties.
{"title":"Radiation Damage in 20-cm Long LYSO:Ce and BaF₂:Y Crystals","authors":"Christina Wang;Liyuan Zhang;Chen Hu;Ren-Yuan Zhu;Kranti Gunthoti;Michael Mocko;Steve Wender;Zhehui Wang","doi":"10.1109/TNS.2024.3434441","DOIUrl":"10.1109/TNS.2024.3434441","url":null,"abstract":"Inorganic scintillators are widely used in high-energy physics (HEP) experiments. Bright and fast cerium-doped lutetium yttrium oxyorthosilicate (\u0000<inline-formula> <tex-math>$text {Lu}_{2(1-x)}text {Y}_{2x}text {SiO}_{{5}}text {:Ce}$ </tex-math></inline-formula>\u0000 or LYSO:Ce or LYSO) crystals are being used to construct the compact muon solenoid (CMS) barrel timing layer (BTL) detector at the high-luminosity large hadron collider (HL-LHC), where up to 2.5-Mrad ionization dose, \u0000<inline-formula> <tex-math>$1.7 times 10^{13}$ </tex-math></inline-formula>\u0000 charged hadrons/cm2, and \u0000<inline-formula> <tex-math>$2 times 10^{14}~text {n}_{text {eq}}/text {cm}^{2}$ </tex-math></inline-formula>\u0000 are expected. With an ultrafast scintillation of less than 0.6- ns decay time and a suppressed slow component, yttrium-doped barium fluoride (BaF2:Y) crystal is a promising ultrafast inorganic scintillator for future HEP time of flight and calorimeter applications at the energy and intensity frontiers. The 20-cm-long LYSO:Ce and BaF2:Y crystals were irradiated by 800-MeV proton beam at the blue room of Los Alamos Neutron Science Center (LANSCE) up to \u0000<inline-formula> <tex-math>$7.5 times 10^{15}$ </tex-math></inline-formula>\u0000 p/cm2. We report on the degradation of their optical and scintillation properties.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"71 9","pages":"2116-2123"},"PeriodicalIF":1.9,"publicationDate":"2024-07-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141863118","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-29DOI: 10.1109/tns.2024.3434367
D. Calvet, E. Molina Gonzalez
{"title":"Development and Test of a 48-optical Ports High Precision Clock Distributor Board","authors":"D. Calvet, E. Molina Gonzalez","doi":"10.1109/tns.2024.3434367","DOIUrl":"https://doi.org/10.1109/tns.2024.3434367","url":null,"abstract":"","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"41 1","pages":""},"PeriodicalIF":1.8,"publicationDate":"2024-07-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141863117","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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