In this study, heavy ion tests at the gate switching mode for four kinds of commercial Si power MOSFETs were conducted. The test result shows that for all samples, the gate switching mode was a harsher condition than the conventional dc mode in heavy ion tests. Additionally, the tolerance to heavy ions varied depending on the vendor and did not depend on the breakdown voltage (BV) margin ratio.
{"title":"Heavy-Ion Testing on Power MOSFETs at Gate Switching Mode for COTS Up-Screening","authors":"Dongwoo Bae;Woojun Lee;Jangkwon Lim;Heikki Kettunen;Woongki Kim;Hyun-Jin Lee;Seungmok Lee;Seungjoo Woo;Changhee Cho;Joongsik Kih;Kiseog Kim;Sang-Soon Yong;Youngboo Kim","doi":"10.1109/TNS.2025.3588070","DOIUrl":"https://doi.org/10.1109/TNS.2025.3588070","url":null,"abstract":"In this study, heavy ion tests at the gate switching mode for four kinds of commercial Si power MOSFETs were conducted. The test result shows that for all samples, the gate switching mode was a harsher condition than the conventional dc mode in heavy ion tests. Additionally, the tolerance to heavy ions varied depending on the vendor and did not depend on the breakdown voltage (BV) margin ratio.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 8","pages":"2452-2457"},"PeriodicalIF":1.9,"publicationDate":"2025-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144867956","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-07-10DOI: 10.1109/TNS.2025.3587945
L. Jokhovets;J. van den Boom;S. Furletov;M. Harff;P. Kulessa;M. Ramm;C. Roth;M. Schlösser;M. Streun;G. Wagenknecht;S. van Waasen
A desired temporal accuracy of scintillator-based detectors is less than 100 ps. In medical imaging, this is necessary for successful time-of-flight positron emission tomography (TOF-PET) measurements. In high-energy physics, the calorimeter time resolution must also be on the order of tens of picoseconds. In this work, we describe a way to achieve such a high level of performance for a detector consisting of a monolithic scintillator that distributes light over several cells of an analog silicon photomultiplier (SiPM) array. Each of the cells is read and analyzed separately, applying a waveform sampling (WFS) technique combined with a nonlinear rise approximation (nLRA). Initially, due to a specific spatiotemporal distribution of photons in the scintillator, as well as saturation and recovery effects inherent to SiPMs, the spread of arrival times deduced from signals of different cells can exceed 1 ns for the same array and the same event. To improve the timing performance, we propose a method of equalization of arrival times for predominantly illuminated cells in the same SiPM array. This results in a coincidence time resolution (CTR) below 100 ps full width at half maximum (FWHM) for a pair of identical detectors.
{"title":"Scintillator-Based SiPM Detector: Improved Performance by Equalization of Pulse Arrival Times","authors":"L. Jokhovets;J. van den Boom;S. Furletov;M. Harff;P. Kulessa;M. Ramm;C. Roth;M. Schlösser;M. Streun;G. Wagenknecht;S. van Waasen","doi":"10.1109/TNS.2025.3587945","DOIUrl":"https://doi.org/10.1109/TNS.2025.3587945","url":null,"abstract":"A desired temporal accuracy of scintillator-based detectors is less than 100 ps. In medical imaging, this is necessary for successful time-of-flight positron emission tomography (TOF-PET) measurements. In high-energy physics, the calorimeter time resolution must also be on the order of tens of picoseconds. In this work, we describe a way to achieve such a high level of performance for a detector consisting of a monolithic scintillator that distributes light over several cells of an analog silicon photomultiplier (SiPM) array. Each of the cells is read and analyzed separately, applying a waveform sampling (WFS) technique combined with a nonlinear rise approximation (nLRA). Initially, due to a specific spatiotemporal distribution of photons in the scintillator, as well as saturation and recovery effects inherent to SiPMs, the spread of arrival times deduced from signals of different cells can exceed 1 ns for the same array and the same event. To improve the timing performance, we propose a method of equalization of arrival times for predominantly illuminated cells in the same SiPM array. This results in a coincidence time resolution (CTR) below 100 ps full width at half maximum (FWHM) for a pair of identical detectors.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 8","pages":"2956-2964"},"PeriodicalIF":1.9,"publicationDate":"2025-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144868362","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-07-07DOI: 10.1109/TNS.2025.3585859
Jonas Gava;Areeb Sherjil;Luiz H. Laurini;Emmanuel Atukpor;Rodrigo Possamai Bastos;Fernando Moraes;Ricardo Reis;Luciano Ost
Convolutional neural networks (CNNs) have become a standard technology in numerous industrial Internet of Things (IoT) applications and sectors, such as automotive and aerospace. Recent advancements in hardware and software (e.g., application programming interface (API)/libraries) components have enabled the efficient execution of multithreaded CNN models on edge devices. As the complexity and adoption of CNNs in safety-critical systems continue to grow, ensuring their resilience becomes key and increasingly challenging. In this context, this work promotes two original contributions: 1) the proposal of a multithreaded implementation of MobileNet, which achieves a $2.67times $ speedup and an energy reduction of 16% with four worker threads, and 2) the first soft error reliability assessment of a multithreaded CNN model running in a multicore processor under high-energy and thermal neutron radiation flux. Results from the radiation campaigns, with more than 31k runs, suggest that multithreaded executions can increase the occurrence of critical faults by up to $5times $ . Results also show a greater number of events during the thermal neutron campaign, and some input images are significantly more robust against silent data corruption (SDC) events.
{"title":"Radiation-Induced Soft Error Assessment of a Multithreaded MobileNet CNN Model Running in a Multicore Edge Processor","authors":"Jonas Gava;Areeb Sherjil;Luiz H. Laurini;Emmanuel Atukpor;Rodrigo Possamai Bastos;Fernando Moraes;Ricardo Reis;Luciano Ost","doi":"10.1109/TNS.2025.3585859","DOIUrl":"https://doi.org/10.1109/TNS.2025.3585859","url":null,"abstract":"Convolutional neural networks (CNNs) have become a standard technology in numerous industrial Internet of Things (IoT) applications and sectors, such as automotive and aerospace. Recent advancements in hardware and software (e.g., application programming interface (API)/libraries) components have enabled the efficient execution of multithreaded CNN models on edge devices. As the complexity and adoption of CNNs in safety-critical systems continue to grow, ensuring their resilience becomes key and increasingly challenging. In this context, this work promotes two original contributions: 1) the proposal of a multithreaded implementation of MobileNet, which achieves a <inline-formula> <tex-math>$2.67times $ </tex-math></inline-formula> speedup and an energy reduction of 16% with four worker threads, and 2) the first soft error reliability assessment of a multithreaded CNN model running in a multicore processor under high-energy and thermal neutron radiation flux. Results from the radiation campaigns, with more than 31k runs, suggest that multithreaded executions can increase the occurrence of critical faults by up to <inline-formula> <tex-math>$5times $ </tex-math></inline-formula>. Results also show a greater number of events during the thermal neutron campaign, and some input images are significantly more robust against silent data corruption (SDC) events.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 8","pages":"2821-2829"},"PeriodicalIF":1.9,"publicationDate":"2025-07-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144867963","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-06-30DOI: 10.1109/TNS.2025.3582513
Joe A. Johnson;Glenn E. Sjoden;Taylor S. Kimball;Meng-Jen Vince Wang
Here, we develop and explore hybrid simulation techniques to expedite pre-test analysis of experimental designs for radiation hardness assurance testing efforts. Specifically, we focus on neutron displacement damage (NDD) testing, governed by American Society of Testing and Materials (ASTM) Standard Practice E722, which characterizes test facility neutron sources in terms of 1 MeV silicon equivalents. In doing so, we develop and compare a methodology for creating damage metrics for any materials using Evaluated Nuclear Data File (ENDF) libraries. Moreover, simple unit cell models were created and demonstrated to provide reasonable estimates for 1 MeV silicon equivalents flux comparable to the full core model of the training, research, isotopes, general atomics (TRIGA) nuclear reactor at the University of Utah. Criticality eigenvalue calculations in the full core were converted to fixed source problems by aliasing a deterministic solution of the same model. This approach the enabled acceleration of models and the application of consistent adjoint driven importance sampling (CADIS) variance reduction techniques, enabling Monte Carlo computational speedups of 10–100-fold with excellent statistics in the sample target area, paving the way for the application of the UUTR in highly efficient parameter studies for NDD testing.
{"title":"Use of Different Reactor Physics Models and CADIS Accelerated MCNP to Yield a 1 MeV Silicon Equivalent Flux for Neutron Damage","authors":"Joe A. Johnson;Glenn E. Sjoden;Taylor S. Kimball;Meng-Jen Vince Wang","doi":"10.1109/TNS.2025.3582513","DOIUrl":"https://doi.org/10.1109/TNS.2025.3582513","url":null,"abstract":"Here, we develop and explore hybrid simulation techniques to expedite pre-test analysis of experimental designs for radiation hardness assurance testing efforts. Specifically, we focus on neutron displacement damage (NDD) testing, governed by American Society of Testing and Materials (ASTM) Standard Practice E722, which characterizes test facility neutron sources in terms of 1 MeV silicon equivalents. In doing so, we develop and compare a methodology for creating damage metrics for any materials using Evaluated Nuclear Data File (ENDF) libraries. Moreover, simple unit cell models were created and demonstrated to provide reasonable estimates for 1 MeV silicon equivalents flux comparable to the full core model of the training, research, isotopes, general atomics (TRIGA) nuclear reactor at the University of Utah. Criticality eigenvalue calculations in the full core were converted to fixed source problems by aliasing a deterministic solution of the same model. This approach the enabled acceleration of models and the application of consistent adjoint driven importance sampling (CADIS) variance reduction techniques, enabling Monte Carlo computational speedups of 10–100-fold with excellent statistics in the sample target area, paving the way for the application of the UUTR in highly efficient parameter studies for NDD testing.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 8","pages":"2910-2918"},"PeriodicalIF":1.9,"publicationDate":"2025-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144868360","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-06-30DOI: 10.1109/TNS.2025.3584220
Edgar van Loef;Myles Inniss;Jared Schott;Kimberly Pestovich;Luis Stand;Mariya Zhuravleva;Charles Melcher;Lakshmi Soundara Pandian;Jarek Glodo
Crystals of undoped and Eu2+-doped TlSr2Br5 of up to 16 mm in diameter and 50 mm in length were grown by the vertical Bridgman technique. TlSr2Br5 has the monoclinic crystal structure with space group P21/c. Its density and $Z_{text {eff}}$ are 5.03 g/cm3 and 58.6, respectively. Radioluminescence spectra of undoped and Eu2+-doped TlSr2Br5 feature a broad emission band peaking at about 440 nm for undoped and 520 nm for Eu2+-doped crystals. The light yield of undoped TlSr2Br5 is 42000 ph/MeV, which increases to 55000 ph/MeV for Eu2+-doped crystals. The energy resolution at 662 keV (137Cs) is about 5%–6% full-width at half-maximum (FWHM). The scintillation decay of undoped and Eu2+-doped TlSr2Br5 is on the order of hundreds of nanoseconds.
{"title":"Crystal Growth, Optical, and Scintillation Properties of Eu²+-Doped TlSr₂Br₅","authors":"Edgar van Loef;Myles Inniss;Jared Schott;Kimberly Pestovich;Luis Stand;Mariya Zhuravleva;Charles Melcher;Lakshmi Soundara Pandian;Jarek Glodo","doi":"10.1109/TNS.2025.3584220","DOIUrl":"https://doi.org/10.1109/TNS.2025.3584220","url":null,"abstract":"Crystals of undoped and Eu2+-doped TlSr2Br5 of up to 16 mm in diameter and 50 mm in length were grown by the vertical Bridgman technique. TlSr2Br5 has the monoclinic crystal structure with space group P21/c. Its density and <inline-formula> <tex-math>$Z_{text {eff}}$ </tex-math></inline-formula> are 5.03 g/cm3 and 58.6, respectively. Radioluminescence spectra of undoped and Eu2+-doped TlSr2Br5 feature a broad emission band peaking at about 440 nm for undoped and 520 nm for Eu2+-doped crystals. The light yield of undoped TlSr2Br5 is 42000 ph/MeV, which increases to 55000 ph/MeV for Eu2+-doped crystals. The energy resolution at 662 keV (137Cs) is about 5%–6% full-width at half-maximum (FWHM). The scintillation decay of undoped and Eu2+-doped TlSr2Br5 is on the order of hundreds of nanoseconds.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 8","pages":"2965-2970"},"PeriodicalIF":1.9,"publicationDate":"2025-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144868435","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Spin-orbit torque magnetic random access memory (SOT-MRAM) demonstrates significant potential for space applications due to its intrinsic radiation tolerance properties. However, evaluating the reliability of SOT-MRAM arrays integrated with metal-oxide-semiconductor (MOS) under high-energy heavy-ion irradiation remains a critical technical challenge. In this study, we assess the radiation tolerance of the SOT-MRAM arrays using high-energy heavy-ion irradiation sources, including Bi ions (1820 MeV), Ta ions (1332 MeV), and Kr ions (500 MeV). The experimental results indicate that the core electrical parameters of the devices, including the critical switching current (${I}_{text {C}}$ ), the tunneling magnetoresistance (TMR), and the bit error rate (BER), remain excellent in stability under irradiation. Notably, post-irradiation testing revealed several short-circuit failures in the SOT-MRAM array after Bi and Ta ions irradiation. These failures are due to radiation-induced defect formation in MgO tunnel barriers, which creates localized conductive pathways. We propose an approach to improve the radiation tolerance of SOT-MRAM arrays. This research supports the practical application of SOT-MRAM devices in space radiation environments.
{"title":"Impact of High-Energy Heavy Ion Irradiation on Spin-Orbit Torque Magnetic Random Access Memory Arrays","authors":"Jiejie Sun;Chuanpeng Jiang;Jinhao Li;Shiyang Lu;Zhongkui Zhang;He Zhang;Hui Jin;Kaihua Cao;Deming Zhang;Bi Wang;Zhaohao Wang;Youguang Zhang;Weisheng Zhao","doi":"10.1109/TNS.2025.3583702","DOIUrl":"https://doi.org/10.1109/TNS.2025.3583702","url":null,"abstract":"Spin-orbit torque magnetic random access memory (SOT-MRAM) demonstrates significant potential for space applications due to its intrinsic radiation tolerance properties. However, evaluating the reliability of SOT-MRAM arrays integrated with metal-oxide-semiconductor (MOS) under high-energy heavy-ion irradiation remains a critical technical challenge. In this study, we assess the radiation tolerance of the SOT-MRAM arrays using high-energy heavy-ion irradiation sources, including Bi ions (1820 MeV), Ta ions (1332 MeV), and Kr ions (500 MeV). The experimental results indicate that the core electrical parameters of the devices, including the critical switching current (<inline-formula> <tex-math>${I}_{text {C}}$ </tex-math></inline-formula>), the tunneling magnetoresistance (TMR), and the bit error rate (BER), remain excellent in stability under irradiation. Notably, post-irradiation testing revealed several short-circuit failures in the SOT-MRAM array after Bi and Ta ions irradiation. These failures are due to radiation-induced defect formation in MgO tunnel barriers, which creates localized conductive pathways. We propose an approach to improve the radiation tolerance of SOT-MRAM arrays. This research supports the practical application of SOT-MRAM devices in space radiation environments.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 8","pages":"2893-2899"},"PeriodicalIF":1.9,"publicationDate":"2025-06-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144868443","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This article presents the design and test results of a high speed and high spatial resolution front-end application-specific integrated circuit (ASIC) prototype for the high current intensity beam positioning detector. An ionization chamber is proposed as the beam position detector. For these applications, ionization chambers are normally used, but to improve spatial resolution, we propose to integrate charge collection electrodes (CCEs) in the front-end ASIC prototype. The proposed ASIC prototype has been designed and manufactured in a $0.18~mu $ m CMOS process. It features 32 channels with a pitch of $50~mu $ m. Each channel consists of a 1 cm long CCE, an analog front-end (AFE), an analog buffer, and a shift register. Test results show that the AFE has a shaping time of less than 200 ns, a power consumption of about $473~mu $ W at a 1.8 V power supply, and an equivalent noise charge (ENC) of less than 180 ${mathrm {e}}^{-}$ .
{"title":"A 32-Channel High-Speed High-Spatial-Resolution Front-End ASIC Prototype for the High Current Intensity Beam Positioning Detector","authors":"Chaosong Gao;Xiaobing Liu;Yichen Yang;Xiangming Sun;Shiqiang Zhou;Zhen Wang;Hantao Hu;Yujie Li;Qianjun Chen;Xu Wang;Qingpeng Xing;Junshuai Liu;Jingyun Feng;Xin Luo;Zhike Feng;Ping Xu;Hong Zhu","doi":"10.1109/TNS.2025.3583185","DOIUrl":"https://doi.org/10.1109/TNS.2025.3583185","url":null,"abstract":"This article presents the design and test results of a high speed and high spatial resolution front-end application-specific integrated circuit (ASIC) prototype for the high current intensity beam positioning detector. An ionization chamber is proposed as the beam position detector. For these applications, ionization chambers are normally used, but to improve spatial resolution, we propose to integrate charge collection electrodes (CCEs) in the front-end ASIC prototype. The proposed ASIC prototype has been designed and manufactured in a <inline-formula> <tex-math>$0.18~mu $ </tex-math></inline-formula>m CMOS process. It features 32 channels with a pitch of <inline-formula> <tex-math>$50~mu $ </tex-math></inline-formula>m. Each channel consists of a 1 cm long CCE, an analog front-end (AFE), an analog buffer, and a shift register. Test results show that the AFE has a shaping time of less than 200 ns, a power consumption of about <inline-formula> <tex-math>$473~mu $ </tex-math></inline-formula>W at a 1.8 V power supply, and an equivalent noise charge (ENC) of less than 180 <inline-formula> <tex-math>${mathrm {e}}^{-}$ </tex-math></inline-formula>.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 7","pages":"2222-2228"},"PeriodicalIF":1.9,"publicationDate":"2025-06-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144671215","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Nuclear batteries based on the voltaic effect using Schottky diode or p-n junction energy converter are usually named alpha-/beta-voltaic batteries. They present particularly unique properties, making them highly interesting in many key technological applications. Diamond exhibits great potential in designing such high performance alpha-/beta-voltaic batteries and self-powered UV detectors. In this study, we present a novel strategy to create highly efficient diamond Schottky diodes. Our approach consists of incorporating a thin TiO2 layer in the vertical diamond Schottky diode using reactive magnetron sputtering to enhance the barrier height and improve the voltaic performance. Thermionic emission (TE) theory was used to extract the Schottky barrier heights. The extracted value of the improved diode was in good agreement with the Schottky-Mott model. The high open circuit voltages of 1.7 and 1.8 V were obtained using americium-241 and deuterium lamp illumination. The short circuit current density was much higher than device without a TiO2 layer.
{"title":"Enhancement of Open Circuit Voltage of Diamond Voltaic Battery by Surface Passivation","authors":"Yiyong Zuo;Chuanlong Li;Benjian Liu;Jiwen Zhao;Ziyi Chen;He Jia;Kang Liu;Sen Zhang;Nikolay Rodionov;Bing Dai;Viktor Ralchenko;Jiaqi Zhu","doi":"10.1109/TNS.2025.3582999","DOIUrl":"https://doi.org/10.1109/TNS.2025.3582999","url":null,"abstract":"Nuclear batteries based on the voltaic effect using Schottky diode or p-n junction energy converter are usually named alpha-/beta-voltaic batteries. They present particularly unique properties, making them highly interesting in many key technological applications. Diamond exhibits great potential in designing such high performance alpha-/beta-voltaic batteries and self-powered UV detectors. In this study, we present a novel strategy to create highly efficient diamond Schottky diodes. Our approach consists of incorporating a thin TiO2 layer in the vertical diamond Schottky diode using reactive magnetron sputtering to enhance the barrier height and improve the voltaic performance. Thermionic emission (TE) theory was used to extract the Schottky barrier heights. The extracted value of the improved diode was in good agreement with the Schottky-Mott model. The high open circuit voltages of 1.7 and 1.8 V were obtained using americium-241 and deuterium lamp illumination. The short circuit current density was much higher than device without a TiO2 layer.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 8","pages":"2928-2933"},"PeriodicalIF":1.9,"publicationDate":"2025-06-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144868357","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-06-20DOI: 10.1109/TNS.2025.3581671
C. Martinella;S. Peracchi;H. Goncalves de Medeiros;N. Für;M. Belanche;M. Nagel;R. Drury;Z. Pastuovic;K. Voss;U. Grossner
The sensitivity to single event effects (SEEs) of commercial silicon carbide (SiC) power MOSFETs and junction barrier Schottky (JBS) diodes has been assessed on a micrometer scale using a focused microbeam of: 1) long- and 2) short-range particles. Degradation or single event leakage current (SELC) induced by short-range particles was reported for two different generations of SiC power MOSFETs and two generations of JBS diodes. GEANT4 and technology computer aided design (TCAD) simulations have been used to interpret the range dependence of SEEs. Simulations for the SELC condition in a diode structure have shown an increase in E-field and impact ionization due to the particle strike, which could be a driving force in creating permanent defects. Furthermore, no sensitivity to SELC or single event burnout (SEB) was observed in the termination regions or along the gate metal runner of two generations of power MOSFETs. Differences were observed when irradiating the devices on and off the source pad, which were attributed to the shallow ion penetration caused by the additional polyimide layer present in the off-pad region.
{"title":"Heavy-Ion Microbeam Studies of Single-Event Leakage Current Induced by Long- and Short-Range Particles in SiC Power Devices","authors":"C. Martinella;S. Peracchi;H. Goncalves de Medeiros;N. Für;M. Belanche;M. Nagel;R. Drury;Z. Pastuovic;K. Voss;U. Grossner","doi":"10.1109/TNS.2025.3581671","DOIUrl":"https://doi.org/10.1109/TNS.2025.3581671","url":null,"abstract":"The sensitivity to single event effects (SEEs) of commercial silicon carbide (SiC) power MOSFETs and junction barrier Schottky (JBS) diodes has been assessed on a micrometer scale using a focused microbeam of: 1) long- and 2) short-range particles. Degradation or single event leakage current (SELC) induced by short-range particles was reported for two different generations of SiC power MOSFETs and two generations of JBS diodes. GEANT4 and technology computer aided design (TCAD) simulations have been used to interpret the range dependence of SEEs. Simulations for the SELC condition in a diode structure have shown an increase in E-field and impact ionization due to the particle strike, which could be a driving force in creating permanent defects. Furthermore, no sensitivity to SELC or single event burnout (SEB) was observed in the termination regions or along the gate metal runner of two generations of power MOSFETs. Differences were observed when irradiating the devices on and off the source pad, which were attributed to the shallow ion penetration caused by the additional polyimide layer present in the off-pad region.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 8","pages":"2426-2434"},"PeriodicalIF":1.9,"publicationDate":"2025-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11045732","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144867855","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In recent years, the demand for a gamma and neutron camera with real time discrimination capabilities has emerged in nuclear physics and medical imaging fields. Specifically, in the field of hadrontherapy, prompt gamma imaging (PGI), a technique for range verification purposes, is strongly affected by the presence of a large neutron background, which can limit the possibility to perform precise range monitoring, especially in the framework of carbon ion radiation therapy (CIRT). This work focuses on the design and development of a compact camera with gamma/neutron discrimination to perform range verification in hadrontherapy, exploiting the gamma signal while discarding the uncorrelated neutron component. Thanks to its dual imaging capability, neutron images can still be stored and used in other applications. Pulse shape discrimination (PSD) was selected as the method for gamma/neutron discrimination after evaluating several techniques. Among the available options, we selected a Cs2LiYCl6:Ce (CLYC) inorganic scintillator as the optimal choice to perform PSD. The detector, based on a $5times 5times 2$ cm CLYC crystal, read out by SiPM tiles and compact electronics, acquires and converts in real time digital PSD coefficients. The use of four 16-channel custom gain amplitude modulation multichannel application-specific integrated circuits (GAMMA ASICs) allows to store the channel’s amplitude information, allowing to retrieve the particle point of interaction in the monolithic crystal and obtaining PSD-resolved images. The system discrimination capability was verified with experimental measurements in the laboratory and beam tests, and a preliminary evaluation of its imaging capability with real-time PSD was successfully conducted.
{"title":"A Position Sensitive Detector With Real-Time Gamma/Neutron Discrimination Capability","authors":"O. Halfon;C. Riboldi;K. Urban;G. Borghi;M. Carminati;F. Bonforte;M. Donetti;M. Pullia;F. Camera;A. Giaz;C. Fiorini","doi":"10.1109/TNS.2025.3581712","DOIUrl":"https://doi.org/10.1109/TNS.2025.3581712","url":null,"abstract":"In recent years, the demand for a gamma and neutron camera with real time discrimination capabilities has emerged in nuclear physics and medical imaging fields. Specifically, in the field of hadrontherapy, prompt gamma imaging (PGI), a technique for range verification purposes, is strongly affected by the presence of a large neutron background, which can limit the possibility to perform precise range monitoring, especially in the framework of carbon ion radiation therapy (CIRT). This work focuses on the design and development of a compact camera with gamma/neutron discrimination to perform range verification in hadrontherapy, exploiting the gamma signal while discarding the uncorrelated neutron component. Thanks to its dual imaging capability, neutron images can still be stored and used in other applications. Pulse shape discrimination (PSD) was selected as the method for gamma/neutron discrimination after evaluating several techniques. Among the available options, we selected a Cs2LiYCl6:Ce (CLYC) inorganic scintillator as the optimal choice to perform PSD. The detector, based on a <inline-formula> <tex-math>$5times 5times 2$ </tex-math></inline-formula> cm CLYC crystal, read out by SiPM tiles and compact electronics, acquires and converts in real time digital PSD coefficients. The use of four 16-channel custom gain amplitude modulation multichannel application-specific integrated circuits (GAMMA ASICs) allows to store the channel’s amplitude information, allowing to retrieve the particle point of interaction in the monolithic crystal and obtaining PSD-resolved images. The system discrimination capability was verified with experimental measurements in the laboratory and beam tests, and a preliminary evaluation of its imaging capability with real-time PSD was successfully conducted.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 7","pages":"2215-2221"},"PeriodicalIF":1.9,"publicationDate":"2025-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11045737","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144671146","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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