Pub Date : 2024-07-18DOI: 10.1109/TNS.2024.3426196
{"title":"IEEE Transactions on Nuclear Science information for authors","authors":"","doi":"10.1109/TNS.2024.3426196","DOIUrl":"https://doi.org/10.1109/TNS.2024.3426196","url":null,"abstract":"","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":null,"pages":null},"PeriodicalIF":1.9,"publicationDate":"2024-07-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10604715","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141725668","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-16DOI: 10.1109/TNS.2024.3429172
Lei Wu;Shangli Dong;Xiaodong Xu;Yadong Wei;Zhongli Liu;Weiqi Li;Jianqun Yang;Xingji Li
The accumulated radiation effects of preirradiation from different radiation sources on single-event burnout (SEB) of silicon carbide metal-oxide-semiconductor field-effect transistors (SiC MOSFETs) were investigated. The displacement damage (DD) was introduced by preirradiation of silicon ions, and compared with the devices without preirradiation, it was found that it is had for SEB to occur in the devices with DD introduced after silicon ion irradiations. In contrast, for gamma ray preirradiation, it was found that SEB occurs more easily in the radiated devices by gamma ray. In addition, technology computer aided design (TCAD) is used to simulate the SEB of the devices, and the bulk defect increases the recombination rate of the devices and leads to the decrease of the current density. At the same voltage, the smaller the current density is, the lower the thermal effect will be, and SEB hardly occurs. The drain current and lattice temperature of the devices with oxide charges are higher, and SEB occurs more easily. The simulation results are reasonably consistent with the experimental results. This study provides a valuable reference for the method of SEB hardening.
{"title":"Influence of Accumulated Radiation Effects on Single-Event Burnout in SiC MOSFETs","authors":"Lei Wu;Shangli Dong;Xiaodong Xu;Yadong Wei;Zhongli Liu;Weiqi Li;Jianqun Yang;Xingji Li","doi":"10.1109/TNS.2024.3429172","DOIUrl":"10.1109/TNS.2024.3429172","url":null,"abstract":"The accumulated radiation effects of preirradiation from different radiation sources on single-event burnout (SEB) of silicon carbide metal-oxide-semiconductor field-effect transistors (SiC MOSFETs) were investigated. The displacement damage (DD) was introduced by preirradiation of silicon ions, and compared with the devices without preirradiation, it was found that it is had for SEB to occur in the devices with DD introduced after silicon ion irradiations. In contrast, for gamma ray preirradiation, it was found that SEB occurs more easily in the radiated devices by gamma ray. In addition, technology computer aided design (TCAD) is used to simulate the SEB of the devices, and the bulk defect increases the recombination rate of the devices and leads to the decrease of the current density. At the same voltage, the smaller the current density is, the lower the thermal effect will be, and SEB hardly occurs. The drain current and lattice temperature of the devices with oxide charges are higher, and SEB occurs more easily. The simulation results are reasonably consistent with the experimental results. This study provides a valuable reference for the method of SEB hardening.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":null,"pages":null},"PeriodicalIF":1.9,"publicationDate":"2024-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141719810","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-15DOI: 10.1109/TNS.2024.3423695
Hongfang Zhang;Adam Stavola;Hal Ferguson;Bence Budavari;Chiman Kwan;Hongyi Wu;Jiang Li
Controlling the dose of radiation exposure in potential radioactive facilities is critical for ensuring the safety of staff and the public. In this article, we developed machine learning (ML) models to estimate radiation exposure efficiently at the Thomas Jefferson National Accelerator Facility (JLab), aiming to enhance safety in both accelerator facilities and public areas. Multiple sensors were deployed around the three experimental halls at JLab. Data on single-beam currents, energy levels, and radiation values at the sensor locations were collected during accelerator operation. We proposed a multitask learning (MTL) model for radiation estimation, using either 1-D convolutional neural networks (1D CNNs) or long short-term memory (LSTM) networks as the backbone. The proposed model was trained to simultaneously estimate radiation levels at the sensor locations. Experimental results demonstrated that the proposed model with LSTM backbone achieved the best estimation performance, with an average $R {^{{2}}}$ score of 0.7557 for estimation within the same year and 0.7157 for estimation across different years. These results significantly surpassed those of competing models.
{"title":"Deep Multitask Learning Models for Radiation Estimation at High Energy Accelerator Facility","authors":"Hongfang Zhang;Adam Stavola;Hal Ferguson;Bence Budavari;Chiman Kwan;Hongyi Wu;Jiang Li","doi":"10.1109/TNS.2024.3423695","DOIUrl":"10.1109/TNS.2024.3423695","url":null,"abstract":"Controlling the dose of radiation exposure in potential radioactive facilities is critical for ensuring the safety of staff and the public. In this article, we developed machine learning (ML) models to estimate radiation exposure efficiently at the Thomas Jefferson National Accelerator Facility (JLab), aiming to enhance safety in both accelerator facilities and public areas. Multiple sensors were deployed around the three experimental halls at JLab. Data on single-beam currents, energy levels, and radiation values at the sensor locations were collected during accelerator operation. We proposed a multitask learning (MTL) model for radiation estimation, using either 1-D convolutional neural networks (1D CNNs) or long short-term memory (LSTM) networks as the backbone. The proposed model was trained to simultaneously estimate radiation levels at the sensor locations. Experimental results demonstrated that the proposed model with LSTM backbone achieved the best estimation performance, with an average \u0000<inline-formula> <tex-math>$R {^{{2}}}$ </tex-math></inline-formula>\u0000 score of 0.7557 for estimation within the same year and 0.7157 for estimation across different years. These results significantly surpassed those of competing models.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":null,"pages":null},"PeriodicalIF":1.9,"publicationDate":"2024-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141722250","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The possibility of using calibrated static random-access memory (SRAM) memory for the quantification of neutron fluence in a radiotherapy facility for cancer treatment utilizing a high-energy 15-MV photon beam (Bremsstrahlung) from an electron linear accelerator has been exploited in this work. This has been performed by varying the field size of the photon beam and the positioning of the SRAM memory at three different positions in relation to the isocenter of the beam. The measurements demonstrated that neutrons originating from interactions between the high-energy photons and accelerator parts with high-Z materials are able to induce single-event upsets (SEUs) in the SRAM memory, where the measured SEUs depend on the measurement location. Monte Carlo (MC) simulations have been performed to retrieve the neutron fluence under each investigated measurement condition. Using the simulated neutron fluence differential in energy and the interactions cross sections determined previously, the expected SEUs were computed. The comparison between measured and simulated SEUs normalized to the linear accelerators (linac) output shows acceptable agreement within the experimental uncertainties. As exposure to secondary neutrons poses a risk to all patients, especially the ones with pacemakers or other electronical aids, the feasibility of establishing the neutron fluence through SEU quantification in an SRAM device provides new opportunities to estimate the associated risk in a clinical environment. Further work can be performed to investigate the correlation between the high-Z linac components and the neutron fluence during patient irradiation to better comprehend the variation between different linac types and manufacturers.
本研究利用电子直线加速器发出的 15-MV 高能光子束（轫致辐射），在癌症放疗设备中使用校准静态随机存取存储器（SRAM）对中子通量进行量化。测量方法是改变光子束的磁场大小以及 SRAM 存储器相对于光子束等中心的三个不同位置。测量结果表明，来自高能光子和加速器部件与高 Z 材料之间相互作用的中子能够在 SRAM 存储器中诱发单次事件中断（SEU），测量到的 SEU 取决于测量位置。我们进行了蒙特卡罗（MC）模拟，以检索每个调查测量条件下的中子通量。利用模拟的中子能量通量差和先前确定的相互作用截面，计算出预期的 SEU。将测量和模拟的 SEU 与线性加速器（linac）输出归一化后进行比较，结果显示在实验不确定性范围内两者的一致性是可以接受的。由于暴露于二次中子对所有病人，特别是装有心脏起搏器或其他电子辅助设备的病人都构成风险，因此在 SRAM 设备中通过 SEU 量化确定中子通量的可行性为估计临床环境中的相关风险提供了新的机会。还可以开展进一步的工作，研究病人辐照期间高 Z 直列加速器组件与中子通量之间的相关性，以便更好地理解不同直列加速器类型和制造商之间的差异。
{"title":"Quantification of Neutron-Induced Single-Event Upsets in a Static Random-Access Memory by Clinical High-Energy Photon Beam","authors":"Lukas Gabrisch;Matteo Cecchetto;Björn Delfs;Hui Khee Looe;Jan Budroweit;Rubén García Alía;Björn Poppe;Vanessa Wyrwoll","doi":"10.1109/TNS.2024.3427773","DOIUrl":"10.1109/TNS.2024.3427773","url":null,"abstract":"The possibility of using calibrated static random-access memory (SRAM) memory for the quantification of neutron fluence in a radiotherapy facility for cancer treatment utilizing a high-energy 15-MV photon beam (Bremsstrahlung) from an electron linear accelerator has been exploited in this work. This has been performed by varying the field size of the photon beam and the positioning of the SRAM memory at three different positions in relation to the isocenter of the beam. The measurements demonstrated that neutrons originating from interactions between the high-energy photons and accelerator parts with high-Z materials are able to induce single-event upsets (SEUs) in the SRAM memory, where the measured SEUs depend on the measurement location. Monte Carlo (MC) simulations have been performed to retrieve the neutron fluence under each investigated measurement condition. Using the simulated neutron fluence differential in energy and the interactions cross sections determined previously, the expected SEUs were computed. The comparison between measured and simulated SEUs normalized to the linear accelerators (linac) output shows acceptable agreement within the experimental uncertainties. As exposure to secondary neutrons poses a risk to all patients, especially the ones with pacemakers or other electronical aids, the feasibility of establishing the neutron fluence through SEU quantification in an SRAM device provides new opportunities to estimate the associated risk in a clinical environment. Further work can be performed to investigate the correlation between the high-Z linac components and the neutron fluence during patient irradiation to better comprehend the variation between different linac types and manufacturers.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":null,"pages":null},"PeriodicalIF":1.9,"publicationDate":"2024-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10597644","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141719808","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The impurity from raw material in the as-grown crystal is one of the most important factors that hamper the advancement of Cd0.9Zn0.1Te (CZT) detectors. However, the influence of impurity oxygen is rarely reported. In this study, the first principle calculation is carried out to give a prediction about transition levels of oxygen-related defects. Glow discharge mass spectrometry (GDMS) is used to determine the concentration of all the elements. The quantitative analysis of oxygen-related defects is carried out by deep-level transient spectrum (I-DLTS), which can break through the limitations of traditional C-DLTS testing in the field of high-resistance materials. The peaks observed at about 50 and 100 K are related to the level of (VCd–O $_{mathrm {Te}})^{0/-}$ and (VCd–O $_{mathrm {Te}})^{-/2-}$ defect pair, with energy about $E_{mathrm {v}} +0.079$ eV and $E_{mathrm {V}} +0.173$ eV, trap cross section about $3.02times 10^{-19}$ and $1.01times 10^{-19}$ cm2, respectively. The effect of oxygen on ( $mu tau)_{e}$ of the CZT semiconductors is evaluated through Alpha particle spectrum response testing by fitting the charge collection efficiency with applied bias voltages. The ( $mu tau)_{e}$ is about $5.21times 10^{-4}$ cm2/V in CZT with more oxygen and $2.33times 10^{-3}$ cm2/V with less oxygen. The mobility is obtained from the results of the time of flight (TOF) testing through the laser-beam-induced current (LBIC) technique, to be around 1000 cm2/V $cdot $ s1 for both samples, and the lifetime to be 494 and 2407 ns, respectively. It can be concluded that oxygen-related defects can terribly affect the electron transport properties.
{"title":"Effect of Oxygen-Related Defects on Electrical Properties of Cd0.9Zn0.1Te Semiconductor","authors":"Haiwen Yu;Hongguang Liu;Jianquan Chen;Ningbo Jia;Miao Wang;Mei Yang;Quanchao Zhang;Tao Wang;Fan Yang;Wanqi Jie","doi":"10.1109/TNS.2024.3417893","DOIUrl":"10.1109/TNS.2024.3417893","url":null,"abstract":"The impurity from raw material in the as-grown crystal is one of the most important factors that hamper the advancement of Cd0.9Zn0.1Te (CZT) detectors. However, the influence of impurity oxygen is rarely reported. In this study, the first principle calculation is carried out to give a prediction about transition levels of oxygen-related defects. Glow discharge mass spectrometry (GDMS) is used to determine the concentration of all the elements. The quantitative analysis of oxygen-related defects is carried out by deep-level transient spectrum (I-DLTS), which can break through the limitations of traditional C-DLTS testing in the field of high-resistance materials. The peaks observed at about 50 and 100 K are related to the level of (VCd–O\u0000<inline-formula> <tex-math>$_{mathrm {Te}})^{0/-}$ </tex-math></inline-formula>\u0000 and (VCd–O\u0000<inline-formula> <tex-math>$_{mathrm {Te}})^{-/2-}$ </tex-math></inline-formula>\u0000 defect pair, with energy about \u0000<inline-formula> <tex-math>$E_{mathrm {v}} +0.079$ </tex-math></inline-formula>\u0000 eV and \u0000<inline-formula> <tex-math>$E_{mathrm {V}} +0.173$ </tex-math></inline-formula>\u0000 eV, trap cross section about \u0000<inline-formula> <tex-math>$3.02times 10^{-19}$ </tex-math></inline-formula>\u0000 and \u0000<inline-formula> <tex-math>$1.01times 10^{-19}$ </tex-math></inline-formula>\u0000 cm2, respectively. The effect of oxygen on (\u0000<inline-formula> <tex-math>$mu tau)_{e}$ </tex-math></inline-formula>\u0000 of the CZT semiconductors is evaluated through Alpha particle spectrum response testing by fitting the charge collection efficiency with applied bias voltages. The (\u0000<inline-formula> <tex-math>$mu tau)_{e}$ </tex-math></inline-formula>\u0000 is about \u0000<inline-formula> <tex-math>$5.21times 10^{-4}$ </tex-math></inline-formula>\u0000 cm2/V in CZT with more oxygen and \u0000<inline-formula> <tex-math>$2.33times 10^{-3}$ </tex-math></inline-formula>\u0000 cm2/V with less oxygen. The mobility is obtained from the results of the time of flight (TOF) testing through the laser-beam-induced current (LBIC) technique, to be around 1000 cm2/V\u0000<inline-formula> <tex-math>$cdot $ </tex-math></inline-formula>\u0000s1 for both samples, and the lifetime to be 494 and 2407 ns, respectively. It can be concluded that oxygen-related defects can terribly affect the electron transport properties.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":null,"pages":null},"PeriodicalIF":1.9,"publicationDate":"2024-07-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141608813","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-10DOI: 10.1109/TNS.2024.3426276
Aya Kanj;Clément Lynde;Frédérick Carrel;Mehdi Ben Mosbah;Julien Venara;Ziad El Bitar;Marc Rousseau;Richard Babut
An experimental study was carried out to determine the light output function of the protons deposited energy in a custom triple discriminating (thermal neutrons/fast neutrons/gamma rays) plastic scintillator. Two response functions of the plastic scintillator were measured and compared using monoenergetic sources of either neutrons or protons. The response function to neutrons was measured at the IRSN Amande facility in CEA Cadarache using the monoenergetic neutron generator. The response matrix was based on six incident neutron energies that ranged from 953 keV to 14.8 MeV. The low-energy threshold for detecting neutrons is evaluated at around 1 MeV. The second response function was measured utilizing the Cyrcé cyclotron at IPHC located in Strasbourg. The response matrix was obtained based on six incident proton energies ranging from 5.9 to 19.97 MeV. The response function measured using monoenergetic neutrons has a nearly rectangular shape that extends from the light output of the low-energy discrimination threshold to the light output of the full incident neutron energy. The pulse height spectra acquired with monoenergetic protons exhibit a Gaussian shape, where the average value corresponds to the light output of the incident protons’ energy. The exponential curve used to fit the light output data acquired from the monoenergetic neutron field generator aligns well with the light output data obtained from the monoenergetic proton beam.
{"title":"Measurement of the Response Function of a Custom Plastic Scintillator Using Monoenergetic Neutron and Proton Sources","authors":"Aya Kanj;Clément Lynde;Frédérick Carrel;Mehdi Ben Mosbah;Julien Venara;Ziad El Bitar;Marc Rousseau;Richard Babut","doi":"10.1109/TNS.2024.3426276","DOIUrl":"10.1109/TNS.2024.3426276","url":null,"abstract":"An experimental study was carried out to determine the light output function of the protons deposited energy in a custom triple discriminating (thermal neutrons/fast neutrons/gamma rays) plastic scintillator. Two response functions of the plastic scintillator were measured and compared using monoenergetic sources of either neutrons or protons. The response function to neutrons was measured at the IRSN Amande facility in CEA Cadarache using the monoenergetic neutron generator. The response matrix was based on six incident neutron energies that ranged from 953 keV to 14.8 MeV. The low-energy threshold for detecting neutrons is evaluated at around 1 MeV. The second response function was measured utilizing the Cyrcé cyclotron at IPHC located in Strasbourg. The response matrix was obtained based on six incident proton energies ranging from 5.9 to 19.97 MeV. The response function measured using monoenergetic neutrons has a nearly rectangular shape that extends from the light output of the low-energy discrimination threshold to the light output of the full incident neutron energy. The pulse height spectra acquired with monoenergetic protons exhibit a Gaussian shape, where the average value corresponds to the light output of the incident protons’ energy. The exponential curve used to fit the light output data acquired from the monoenergetic neutron field generator aligns well with the light output data obtained from the monoenergetic proton beam.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":null,"pages":null},"PeriodicalIF":1.9,"publicationDate":"2024-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141585902","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-10DOI: 10.1109/tns.2024.3426086
Zitao Zhao, Lin Wen, Yudong Li, Bingkai Liu, Jie Feng, Zhikang Yang, Yihao Cui, Qi Guo
{"title":"Mechanisms of Dark Current Increase and Pixel Anomalies Induced by 2 GeV Ta-irradiation in 8T-CMOS Image Sensors","authors":"Zitao Zhao, Lin Wen, Yudong Li, Bingkai Liu, Jie Feng, Zhikang Yang, Yihao Cui, Qi Guo","doi":"10.1109/tns.2024.3426086","DOIUrl":"https://doi.org/10.1109/tns.2024.3426086","url":null,"abstract":"","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":null,"pages":null},"PeriodicalIF":1.8,"publicationDate":"2024-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141585903","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-10DOI: 10.1109/TNS.2024.3426077
Victor Malherbe;Olivier Nier;Soilihi Moindjie;Philippe Roche;François Roy;Arnaud Tournier
Gamma and X-ray irradiation results are reported on several variants of deep-trench photogate research and development pixels from STMicroelectronics. Dark current performances are compared for electron and hole-collecting pixels (n, p-type) of 2 and $1~{mu }$ m pitch. Total ionizing dose (TID) results on $2~{mu }$ m p-type photogates are generally consistent with previous studies, showing state-of-the-art radiation tolerance at 70 kGy (Si); $1~{mu }$ m n-type pixels are found to quickly degrade under radiation, in line with expectations; $1~{mu }$ m p-type photogates exhibit very promising radiation hardness, improving on the $2~{mu }$ m p-type results by more than two orders of magnitude, with a dark current below 50 h+/s after 40 kGy gamma rays or 64 kGy (Si) X-rays.
报告了意法半导体公司深沟光栅研发像素的几种变体的伽马射线和 X 射线辐照结果。比较了间距为 2 和 1~{mu }$ m 的电子和空穴收集像素（n 型、p 型）的暗电流性能。2~{mu }$ m p 型光电元件的总电离剂量 (TID) 结果与之前的研究基本一致，显示出 70 kGy（硅）的最先进辐射耐受性；1~{mu }$ m n 型像素在辐射下会迅速衰减，符合预期； 1~{mu }$ m p 型光栅表现出非常好的辐射硬度，比 2~{mu }$ m p 型的结果提高了两个数量级以上，在 40 kGy 伽马射线或 64 kGy（硅）X 射线之后，暗电流低于 50 h+/s。
{"title":"Radiation Hardness of Modern Photogate Pixels Under Total Ionizing Dose: Impact of Pixel Pitch and Electron or Hole Collection","authors":"Victor Malherbe;Olivier Nier;Soilihi Moindjie;Philippe Roche;François Roy;Arnaud Tournier","doi":"10.1109/TNS.2024.3426077","DOIUrl":"10.1109/TNS.2024.3426077","url":null,"abstract":"Gamma and X-ray irradiation results are reported on several variants of deep-trench photogate research and development pixels from STMicroelectronics. Dark current performances are compared for electron and hole-collecting pixels (n, p-type) of 2 and \u0000<inline-formula> <tex-math>$1~{mu }$ </tex-math></inline-formula>\u0000m pitch. Total ionizing dose (TID) results on \u0000<inline-formula> <tex-math>$2~{mu }$ </tex-math></inline-formula>\u0000m p-type photogates are generally consistent with previous studies, showing state-of-the-art radiation tolerance at 70 kGy (Si); \u0000<inline-formula> <tex-math>$1~{mu }$ </tex-math></inline-formula>\u0000m n-type pixels are found to quickly degrade under radiation, in line with expectations; \u0000<inline-formula> <tex-math>$1~{mu }$ </tex-math></inline-formula>\u0000m p-type photogates exhibit very promising radiation hardness, improving on the \u0000<inline-formula> <tex-math>$2~{mu }$ </tex-math></inline-formula>\u0000m p-type results by more than two orders of magnitude, with a dark current below 50 h+/s after 40 kGy gamma rays or 64 kGy (Si) X-rays.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":null,"pages":null},"PeriodicalIF":1.9,"publicationDate":"2024-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141588423","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-08DOI: 10.1109/TNS.2024.3422902
Krishna C. Mandal;Sandeep K. Chaudhuri;Frank H. Ruddy
This article reviews the performance of vertical metal-oxide-semiconductor (MOS) radiation detectors on n-type 4H-silicon carbide (SiC) epitaxial layers, comparing SiO2, Y2O3, and Ga2O3 oxide layers. While the fabrication of conventional Schottky barrier detectors (SBDs) is much simpler, MOS detectors allow higher bias voltages, achieving full depletion in thick epitaxial layers. Fully depleted thick epitaxial layers pose larger attenuation to penetrating radiation such as X-/ $gamma $ -rays and neutrons enabling efficient and high-resolution detection. Hence, 4H-SiC-based MOS detectors directly address the quest of developing radiation hard detectors suitable for penetrating radiation in harsh environments such as nuclear reactor cores and space missions. All the MOS detectors discussed in this study demonstrated excellent rectification properties with the Y2O3 MOS detectors showing the lowest reverse-biased leakage current. Y2O3 MOS detectors also showed the highest resolution and charge collection efficiency (CCE) in self-biased mode even when compared to a benchmark Ni/4H-SiC SBD. All of the MOS detectors showed high energy resolution at optimized bias for 5486 keV alpha particles. The 0.29% energy resolution of the benchmark SBD is attributed to substantially lower Z $_{1/2}$ and EH $_{6/7}$ trap concentrations in the 4H-SiC epilayers than those in the MOS detectors. The study emphasizes suppressing lifetime-killer trap centers such as Z $_{1/2}$ and EH $_{6/7}$ for enhanced detector performance and underscores the need for further investigation into surface passivation mechanisms and their impact on junction properties.
本文回顾了在 n 型 4H 碳化硅（SiC）外延层上的垂直金属氧化物半导体（MOS）辐射探测器的性能，并对 SiO2、Y2O3 和 Ga2O3 氧化物层进行了比较。虽然传统肖特基势垒探测器（SBD）的制造要简单得多，但 MOS 探测器允许更高的偏置电压，从而实现厚外延层的完全耗尽。完全耗尽的厚外延层对 X 射线/伽马射线和中子等穿透性辐射的衰减更大，从而实现了高效和高分辨率的探测。因此，基于 4H-SiC 的 MOS 探测器直接满足了开发适用于核反应堆堆芯和太空任务等恶劣环境中穿透辐射的硬辐射探测器的需求。本研究中讨论的所有 MOS 探测器都具有出色的整流特性，其中 Y2O3 MOS 探测器的反向偏压漏电流最低。Y2O3 MOS 探测器在自偏压模式下也显示出最高的分辨率和电荷收集效率（CCE），即使与基准 Ni/4H-SiC SBD 相比也是如此。对于 5486 千兆赫的阿尔法粒子，所有 MOS 探测器在优化偏压下都显示出很高的能量分辨率。基准 SBD 0.29% 的能量分辨率是由于 4H-SiC 外延层中的 Z $_{1/2}$ 和 EH $_{6/7}$ 陷阱浓度大大低于 MOS 探测器中的浓度。这项研究强调了抑制 Z $_{1/2}$ 和 EH $_{6/7}$ 等寿命杀手陷阱中心以提高探测器性能的重要性，并强调了进一步研究表面钝化机制及其对结点特性影响的必要性。
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