Pub Date : 2025-07-21DOI: 10.1109/TNS.2025.3588364
{"title":"TechRxiv: Share Your Preprint Research With the World!","authors":"","doi":"10.1109/TNS.2025.3588364","DOIUrl":"https://doi.org/10.1109/TNS.2025.3588364","url":null,"abstract":"","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 7","pages":"2106-2106"},"PeriodicalIF":1.9,"publicationDate":"2025-07-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11087460","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144671264","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-07-21DOI: 10.1109/TNS.2025.3591060
Xianfei Wen;Jason P. Hayward
The 2-D position sensitive neutron detectors featuring a significantly improved count rate capacity and a sub-mm spatial resolution are in high demand by neutron scattering facilities, especially the next generation high-flux spallation neutron sources (SNSs). They are anticipated to play a crucial role in fully utilizing the unprecedentedly high neutron brightness offered by these sources. In this work, a high rate and high spatial resolution neutron Anger camera has been successfully developed based on a Ce-doped microcolumnar LiI scintillator film and the PETsys TOFPET2 ASIC readout electronics. The performance evaluation was conducted in a standard laboratory environment as well as the High Flux Isotope Reactor (HFIR) at Oak Ridge National Laboratory (ORNL) with regard to light yield, $gamma $ -ray sensitivity, neutron detection efficiency, count rate capability, spatial resolution, and position linearity. The LiI:Ce scintillator was found to have a higher light yield and a lower $gamma $ -ray sensitivity than GS20 (i.e., 11729 versus 6000 photons/n and $1.67times 10^{-5}$ versus on the order of $10^{-4}$ ). The neutron detection efficiency was measured to be 63% at 4.2 Å. This camera demonstrated an exceptional count rate capability, up to at least 481 kHz without rate loss. The spatial resolution was as good as 0.47 mm. The position linearity was also enhanced.
{"title":"A Ce-Doped LiI Scintillator Film-Based High Rate, High Spatial Resolution Neutron Anger Camera for Neutron Scattering Facilities","authors":"Xianfei Wen;Jason P. Hayward","doi":"10.1109/TNS.2025.3591060","DOIUrl":"https://doi.org/10.1109/TNS.2025.3591060","url":null,"abstract":"The 2-D position sensitive neutron detectors featuring a significantly improved count rate capacity and a sub-mm spatial resolution are in high demand by neutron scattering facilities, especially the next generation high-flux spallation neutron sources (SNSs). They are anticipated to play a crucial role in fully utilizing the unprecedentedly high neutron brightness offered by these sources. In this work, a high rate and high spatial resolution neutron Anger camera has been successfully developed based on a Ce-doped microcolumnar LiI scintillator film and the PETsys TOFPET2 ASIC readout electronics. The performance evaluation was conducted in a standard laboratory environment as well as the High Flux Isotope Reactor (HFIR) at Oak Ridge National Laboratory (ORNL) with regard to light yield, <inline-formula> <tex-math>$gamma $ </tex-math></inline-formula>-ray sensitivity, neutron detection efficiency, count rate capability, spatial resolution, and position linearity. The LiI:Ce scintillator was found to have a higher light yield and a lower <inline-formula> <tex-math>$gamma $ </tex-math></inline-formula>-ray sensitivity than GS20 (i.e., 11729 versus 6000 photons/n and <inline-formula> <tex-math>$1.67times 10^{-5}$ </tex-math></inline-formula> versus on the order of <inline-formula> <tex-math>$10^{-4}$ </tex-math></inline-formula>). The neutron detection efficiency was measured to be 63% at 4.2 Å. This camera demonstrated an exceptional count rate capability, up to at least 481 kHz without rate loss. The spatial resolution was as good as 0.47 mm. The position linearity was also enhanced.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 9","pages":"3138-3144"},"PeriodicalIF":1.9,"publicationDate":"2025-07-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145090101","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-07-21DOI: 10.1109/TNS.2025.3581485
James M. Trippe;Brian D. Sierawski;Grant Mayberry;Hannah M. Dattilo;Sokrates T. Pantelides;Daniel M. Fleetwood;Ronald D. Schrimpf;Lloyd W. Massengill;Robert A. Reed
This erratum corrects inadvertent errors in Fig. 4 and associated text in [1]. No conclusions of the original article change due to correction of these errors.
此勘误表更正了图4和[1]中相关文本中的无意错误。这些错误的修正没有改变原文的结论。
{"title":"Errata to “Effectiveness of NIEL as a Predictor of Single-Event Displacement Damage Effects in CMOS Circuits”","authors":"James M. Trippe;Brian D. Sierawski;Grant Mayberry;Hannah M. Dattilo;Sokrates T. Pantelides;Daniel M. Fleetwood;Ronald D. Schrimpf;Lloyd W. Massengill;Robert A. Reed","doi":"10.1109/TNS.2025.3581485","DOIUrl":"https://doi.org/10.1109/TNS.2025.3581485","url":null,"abstract":"This erratum corrects inadvertent errors in Fig. 4 and associated text in <xref>[1]</xref>. No conclusions of the original article change due to correction of these errors.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 7","pages":"2254-2254"},"PeriodicalIF":1.9,"publicationDate":"2025-07-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11087461","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144671111","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-07-21DOI: 10.1109/TNS.2025.3586581
{"title":"IEEE Transactions on Nuclear Science information for authors","authors":"","doi":"10.1109/TNS.2025.3586581","DOIUrl":"https://doi.org/10.1109/TNS.2025.3586581","url":null,"abstract":"","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 7","pages":"C3-C3"},"PeriodicalIF":1.9,"publicationDate":"2025-07-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11087451","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144671219","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The LingShu plasma control system (PCS) is a distributed, real-time control system designed for tokamak control, featuring a modular architecture and adaptability to heterogeneous hardware. To enhance its reliability and stability, a prognostics and health management (PHM) component was implemented to address health maintenance challenges in distributed environments, where unplanned downtimes can cause delays, data loss, and equipment damage. The PHM component spans the full PCS lifecycle, playing key roles in development, operation, and maintenance phases. During development, a stochastic timed colored Petri net (STCPN) model was introduced to simulate the behavior of complex real-time systems, identifying race conditions and deadlocks in the design phase. This marks the first use of STCPN in fusion control systems, strengthening system robustness and reliability. In operation, the PHM component integrates real-time monitoring, fault diagnosis, and prediction, leveraging LingShu’s modular and plugin-based design for flexible subsystem adaptation. It evaluates system health and reminds PCS to take actions, such as algorithm switching, to ensure stability and minimize downtime. During maintenance, detailed logs and visualization interfaces enable rapid fault localization and troubleshooting, reducing downtime and costs. The PHM component employs decision table-based fault diagnosis, analytic hierarchy process (AHP) inspired health evaluation, and long short-term memory (LSTM) models for resource usage prediction. This approach addresses challenges like resource fluctuations from algorithm switching and “closed box” algorithms, offering dynamic health evaluation standards to enhance monitoring accuracy and system adaptability. Deployed during the 2024 EAST campaign, the PHM component operated continuously, supporting PCS reliability and demonstrating its potential in fusion research.
{"title":"Advanced Prognostics and Health Management for Distributed Plasma Control Systems: A Stochastic Timed Colored Petri Net and Machine Learning-Based Approach","authors":"Junjie Huang;Qiping Yuan;Zhongmin Huang;Ruirui Zhang;Gen Xu;Jianqiu Zhu;Xueliang Liu;Bingjia Xiao","doi":"10.1109/TNS.2025.3585371","DOIUrl":"https://doi.org/10.1109/TNS.2025.3585371","url":null,"abstract":"The LingShu plasma control system (PCS) is a distributed, real-time control system designed for tokamak control, featuring a modular architecture and adaptability to heterogeneous hardware. To enhance its reliability and stability, a prognostics and health management (PHM) component was implemented to address health maintenance challenges in distributed environments, where unplanned downtimes can cause delays, data loss, and equipment damage. The PHM component spans the full PCS lifecycle, playing key roles in development, operation, and maintenance phases. During development, a stochastic timed colored Petri net (STCPN) model was introduced to simulate the behavior of complex real-time systems, identifying race conditions and deadlocks in the design phase. This marks the first use of STCPN in fusion control systems, strengthening system robustness and reliability. In operation, the PHM component integrates real-time monitoring, fault diagnosis, and prediction, leveraging LingShu’s modular and plugin-based design for flexible subsystem adaptation. It evaluates system health and reminds PCS to take actions, such as algorithm switching, to ensure stability and minimize downtime. During maintenance, detailed logs and visualization interfaces enable rapid fault localization and troubleshooting, reducing downtime and costs. The PHM component employs decision table-based fault diagnosis, analytic hierarchy process (AHP) inspired health evaluation, and long short-term memory (LSTM) models for resource usage prediction. This approach addresses challenges like resource fluctuations from algorithm switching and “closed box” algorithms, offering dynamic health evaluation standards to enhance monitoring accuracy and system adaptability. Deployed during the 2024 EAST campaign, the PHM component operated continuously, supporting PCS reliability and demonstrating its potential in fusion research.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 8","pages":"2877-2892"},"PeriodicalIF":1.9,"publicationDate":"2025-07-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144868442","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This work introduces an advanced technique optimized for detecting photons generated by charged particles, leveraging Skipper charge coupled device (Skipper-CCD) image sensors. By analyzing background sources and detection efficiencies, the technique achieves strong agreement between experimental results and Cherenkov-based simulations. It also provides a robust framework for investigating secondary photon production in environments with high fluxes of ionizing particles, such as those anticipated in space-based astronomical instruments. These secondary photons present a critical challenge as background noise for next-generation single-photon resolving imagers used to study faint celestial objects. Furthermore, the method exhibits significant potential for broader applications, including exploring photon generation in various substrate materials and examining their transport through multiple interfaces.
{"title":"Measurement of Photons Emitted by High-Energy Charged Particles as Background in Single-Photon Resolving Image Sensors","authors":"Guillermo Fernandez Moroni;Fernando Chierchie;Lucas Giardino;Javier Tiffenberg;Juan Estrada","doi":"10.1109/TNS.2025.3586965","DOIUrl":"https://doi.org/10.1109/TNS.2025.3586965","url":null,"abstract":"This work introduces an advanced technique optimized for detecting photons generated by charged particles, leveraging Skipper charge coupled device (Skipper-CCD) image sensors. By analyzing background sources and detection efficiencies, the technique achieves strong agreement between experimental results and Cherenkov-based simulations. It also provides a robust framework for investigating secondary photon production in environments with high fluxes of ionizing particles, such as those anticipated in space-based astronomical instruments. These secondary photons present a critical challenge as background noise for next-generation single-photon resolving imagers used to study faint celestial objects. Furthermore, the method exhibits significant potential for broader applications, including exploring photon generation in various substrate materials and examining their transport through multiple interfaces.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 8","pages":"2948-2955"},"PeriodicalIF":1.9,"publicationDate":"2025-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144868361","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In this article, an irradiation-hardened p-GaN high electron mobility transistor (HEMT) based on the AlN polarization effect (A-HEMT) was proposed. First, before irradiation, the AlN polarization effect assists the gate in regulating the channel, enhances the charge sharing in the GaN layer, and suppresses the drain-induced barrier lowering (DIBL) effect. Second, after passivating the gate etched surface with the AlN strain layer, the electron trap density at the AlGaN/GaN interface decreased from $7.69times 10^{18}$ to $8.66times 10^{17}$ /(eV$cdot $ cm2). The hole trap density at the p-GaN/AlGaN interface decreased from $3.0times 10^{18}$ to $5.21times 10^{17}$ /(eV$cdot $ cm2), and the trap energy level became shallower from 0.289 to 0.281 eV. As a result of the mitigated gate trap effect, after 300 and 500 krad(Si) on-state irradiation, the gate Schottky barrier and the ideality factor of A-HEMT were less degraded. Furthermore, the post-irradiation carrier transport model of the A-HEMT gate-stack was proposed. Third, the optimized electric field modulated by AlN polarization in the device drift region can effectively shield the charge generated by the on-state irradiation. After a 500 krad(Si) dose, the A-HEMT has a smaller ${V}_{text {th}}$ drift and a smaller ${R}_{text {dson}}$ variation. The channel electric field in the A-HEMT was about 1.6 times lower than that of the conventional HEMT (C-HEMT). The measured capacitance showed that the AlN strain layer can reduce the traps induced by on-state irradiation in the active region of the device. Therefore, the AlN strain layer is a feasible irradiation hardening method.
{"title":"Irradiation Hardening of p-GaN HEMT Based on AlN Polarization Regulation Mechanism","authors":"Wenqi Fan;Jinpeng Qiu;Wei Huang;Jingyu Shen;David Wei Zhang","doi":"10.1109/TNS.2025.3589385","DOIUrl":"https://doi.org/10.1109/TNS.2025.3589385","url":null,"abstract":"In this article, an irradiation-hardened p-GaN high electron mobility transistor (HEMT) based on the AlN polarization effect (A-HEMT) was proposed. First, before irradiation, the AlN polarization effect assists the gate in regulating the channel, enhances the charge sharing in the GaN layer, and suppresses the drain-induced barrier lowering (DIBL) effect. Second, after passivating the gate etched surface with the AlN strain layer, the electron trap density at the AlGaN/GaN interface decreased from <inline-formula> <tex-math>$7.69times 10^{18}$ </tex-math></inline-formula> to <inline-formula> <tex-math>$8.66times 10^{17}$ </tex-math></inline-formula>/(eV<inline-formula> <tex-math>$cdot $ </tex-math></inline-formula>cm2). The hole trap density at the p-GaN/AlGaN interface decreased from <inline-formula> <tex-math>$3.0times 10^{18}$ </tex-math></inline-formula> to <inline-formula> <tex-math>$5.21times 10^{17}$ </tex-math></inline-formula>/(eV<inline-formula> <tex-math>$cdot $ </tex-math></inline-formula>cm2), and the trap energy level became shallower from 0.289 to 0.281 eV. As a result of the mitigated gate trap effect, after 300 and 500 krad(Si) <sc>on</small>-state irradiation, the gate Schottky barrier and the ideality factor of A-HEMT were less degraded. Furthermore, the post-irradiation carrier transport model of the A-HEMT gate-stack was proposed. Third, the optimized electric field modulated by AlN polarization in the device drift region can effectively shield the charge generated by the on-state irradiation. After a 500 krad(Si) dose, the A-HEMT has a smaller <inline-formula> <tex-math>${V}_{text {th}}$ </tex-math></inline-formula> drift and a smaller <inline-formula> <tex-math>${R}_{text {dson}}$ </tex-math></inline-formula> variation. The channel electric field in the A-HEMT was about 1.6 times lower than that of the conventional HEMT (C-HEMT). The measured capacitance showed that the AlN strain layer can reduce the traps induced by <sc>on</small>-state irradiation in the active region of the device. Therefore, the AlN strain layer is a feasible irradiation hardening method.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 8","pages":"2900-2909"},"PeriodicalIF":1.9,"publicationDate":"2025-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144868397","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-07-14DOI: 10.1109/TNS.2025.3588691
Fabio Benevenuti;Arthur F. Ely;Nilberto H. Medina;Nemitala Added;Vitor Ângelo P. Aguiar;Eduardo L. A. Macchione;Saulo G. Alberton;Greiciane J. Cesário;Matheus S. Pereira;Marcilei A. Guazzelli;Antonio Carlos S. Beck;José Rodrigo Azambuja;Fernanda L. Kastensmidt
This study examines the performance of two convolutional neural networks (CNNs) designed for aerial image classification in the presence of radiation-induced bit-flips. We modify these CNNs by adjusting parameters such as quantization and parallelism to facilitate their implementation using the FINN inference engine, which is optimized for the AMD/Xilinx field programmable gate arrays (FPGAs). The aim is to evaluate the impact of different quantization levels, network topologies, and architectural parallelism on area, computational performance, and reliability in the presence of soft-errors. Emulated fault injection and heavy ion irradiation were performed. The results indicate that the same CNN topology can exhibit up to a $2.7times $ difference in mean fluence to failure (M$Phi $ TF) by altering quantization and architectural parallelism. The findings demonstrate that higher dependability can be obtained by carefully combining a suitable CNN topology with optimized quantization and architectural parallelism.
{"title":"Reliability of FINN-Generated CNN Accelerators for Image Classification on SRAM-Based FPGAs Under Heavy-Ion-Induced Faults","authors":"Fabio Benevenuti;Arthur F. Ely;Nilberto H. Medina;Nemitala Added;Vitor Ângelo P. Aguiar;Eduardo L. A. Macchione;Saulo G. Alberton;Greiciane J. Cesário;Matheus S. Pereira;Marcilei A. Guazzelli;Antonio Carlos S. Beck;José Rodrigo Azambuja;Fernanda L. Kastensmidt","doi":"10.1109/TNS.2025.3588691","DOIUrl":"https://doi.org/10.1109/TNS.2025.3588691","url":null,"abstract":"This study examines the performance of two convolutional neural networks (CNNs) designed for aerial image classification in the presence of radiation-induced bit-flips. We modify these CNNs by adjusting parameters such as quantization and parallelism to facilitate their implementation using the FINN inference engine, which is optimized for the AMD/Xilinx field programmable gate arrays (FPGAs). The aim is to evaluate the impact of different quantization levels, network topologies, and architectural parallelism on area, computational performance, and reliability in the presence of soft-errors. Emulated fault injection and heavy ion irradiation were performed. The results indicate that the same CNN topology can exhibit up to a <inline-formula> <tex-math>$2.7times $ </tex-math></inline-formula> difference in mean fluence to failure (M<inline-formula> <tex-math>$Phi $ </tex-math></inline-formula> TF) by altering quantization and architectural parallelism. The findings demonstrate that higher dependability can be obtained by carefully combining a suitable CNN topology with optimized quantization and architectural parallelism.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 8","pages":"2830-2838"},"PeriodicalIF":1.9,"publicationDate":"2025-07-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144867951","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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