When X-rays and gamma rays irradiate a vacuum Compton detector (VCD), photoelectrons and Compton electrons are generated on the cavity surface, resulting in a strong internal electromagnetic pulse (IEMP) in the cavity. To quantify the characteristics of the IEMP interference on VCD response, an electromagnetic interference-coupling model for a VCD was established with computer simulation technology particle studio (CST PS). The accuracy of the model was verified under pulsed gamma conditions. The characteristics of electromagnetic interference were studied by simulation and experimental methods under a 50 ps pulsewidth electron accelerator. The results are in good agreement in time and frequency. The effects of absorbing materials to strengthen anti-electromagnetic interference of the VCD were simulated using the model. The possible sources of interference signals were discussed as well. The coupling model presented in this article provides an efficient and accurate tool for the anti-electromagnetic interference design of VCDs under pulsed X-rays, gamma ray, and electron radiation.
当 X 射线和伽马射线照射真空康普顿探测器（VCD）时，腔体表面会产生光电子和康普顿电子，从而在腔体中产生强烈的内部电磁脉冲（IEMP）。为了量化内电磁脉冲对 VCD 响应的干扰特性，利用计算机模拟技术粒子工作室（CST PS）建立了 VCD 的电磁干扰耦合模型。在脉冲伽马条件下验证了模型的准确性。在 50 ps 脉宽的电子加速器下，通过模拟和实验方法研究了电磁干扰的特性。结果在时间和频率上都非常吻合。利用模型模拟了吸收材料对加强 VCD 抗电磁干扰的影响。同时还讨论了干扰信号的可能来源。本文介绍的耦合模型为脉冲 X 射线、伽马射线和电子辐射下的 VCD 抗电磁干扰设计提供了一个有效而精确的工具。
{"title":"Coupling Model Research of Electromagnetic Pulse Interference Generated by Pulsed Radiation on Vacuum Compton Detector Response","authors":"Yicheng Yi;Yi Wang;Cui Meng;Kaixiang Yang;Zhaohui Song;Xingyin Guan;Dong Li;Yi Lu;Yang Ye;Hetong Han;Shuai Hao","doi":"10.1109/TNS.2024.3432608","DOIUrl":"10.1109/TNS.2024.3432608","url":null,"abstract":"When X-rays and gamma rays irradiate a vacuum Compton detector (VCD), photoelectrons and Compton electrons are generated on the cavity surface, resulting in a strong internal electromagnetic pulse (IEMP) in the cavity. To quantify the characteristics of the IEMP interference on VCD response, an electromagnetic interference-coupling model for a VCD was established with computer simulation technology particle studio (CST PS). The accuracy of the model was verified under pulsed gamma conditions. The characteristics of electromagnetic interference were studied by simulation and experimental methods under a 50 ps pulsewidth electron accelerator. The results are in good agreement in time and frequency. The effects of absorbing materials to strengthen anti-electromagnetic interference of the VCD were simulated using the model. The possible sources of interference signals were discussed as well. The coupling model presented in this article provides an efficient and accurate tool for the anti-electromagnetic interference design of VCDs under pulsed X-rays, gamma ray, and electron radiation.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":null,"pages":null},"PeriodicalIF":1.9,"publicationDate":"2024-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141781630","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-22DOI: 10.1109/TNS.2024.3431551
Fengkai Liu;Zhongli Liu;Xin Jin;Shuo Liu;Lei Wu;Jianqun Yang;Jizhou Luo;Ruixiang Xu;Xingji Li
This work presents the impact of heavy ion irradiation on vertical-diffused metal-oxide-semiconductor field-effect transistors (VDMOSFETs), particularly focusing on the ionization and displacement damage pivotal for the operation of devices in space environments. We conducted experiments using irradiation with chlorine, silicon, fluorine, and oxygen ions. Our analysis involves calculating the linear energy transfer (LET) and nonionizing energy loss (NIEL) for various ion incidences, followed by determining the ionizing absorbed dose ( $D _{mathrm {i}}$ ) and displacement absorbed dose ( $D _{mathrm {d}}$ ) based on these parameters. Subsequently, we normalized the effects of heavy ion irradiation by examining the threshold voltage shift ( $Delta V _{mathrm {TH}}$ ) for ionization damage, and the drain-leakage current variation ( $Delta I _{mathrm {DLC}}$ ) and drain-saturation current variation ( $Delta I _{mathrm {DSC}}$ ) for displacement damage. Our findings reveal that the displacement damage, characterized by the $Delta I _{mathrm {DLC}}$ indicator, serves as a dependable metric for normalizing the impact across varying ion species. This discovery is significant for the equivalent study of different kinds of spaceborne charged ion irradiation in power VDMOS transistors.
这项研究介绍了重离子辐照对垂直扩散金属氧化物半导体场效应晶体管（VDMOSFET）的影响，尤其侧重于对器件在太空环境中运行至关重要的电离和位移损伤。我们使用氯、硅、氟和氧离子进行了辐照实验。我们的分析包括计算各种离子发生率的线性能量转移（LET）和非电离能量损失（NIEL），然后根据这些参数确定电离吸收剂量（$D _{mathrm {i}}$）和位移吸收剂量（$D _{mathrm {d}}$）。随后，我们通过检测电离损伤的阈值电压偏移（$Delta V _{mathrm {TH}}$）、位移损伤的漏极泄漏电流变化（$Delta I _{mathrm {DLC}}$）和漏极饱和电流变化（$Delta I _{mathrm {DSC}}$），对重离子辐照的影响进行了归一化处理。我们的研究结果表明，以 $Delta I _{mathrm {DLC}}$ 指标为特征的位移损伤是对不同离子种类的影响进行归一化的可靠指标。这一发现对于等效研究功率 VDMOS 晶体管中不同种类的空间带电离子辐照具有重要意义。
{"title":"Normalization Indicator of Ion-Induced Radiation Damage in Power VDMOS Transistors","authors":"Fengkai Liu;Zhongli Liu;Xin Jin;Shuo Liu;Lei Wu;Jianqun Yang;Jizhou Luo;Ruixiang Xu;Xingji Li","doi":"10.1109/TNS.2024.3431551","DOIUrl":"10.1109/TNS.2024.3431551","url":null,"abstract":"This work presents the impact of heavy ion irradiation on vertical-diffused metal-oxide-semiconductor field-effect transistors (VDMOSFETs), particularly focusing on the ionization and displacement damage pivotal for the operation of devices in space environments. We conducted experiments using irradiation with chlorine, silicon, fluorine, and oxygen ions. Our analysis involves calculating the linear energy transfer (LET) and nonionizing energy loss (NIEL) for various ion incidences, followed by determining the ionizing absorbed dose (\u0000<inline-formula> <tex-math>$D _{mathrm {i}}$ </tex-math></inline-formula>\u0000) and displacement absorbed dose (\u0000<inline-formula> <tex-math>$D _{mathrm {d}}$ </tex-math></inline-formula>\u0000) based on these parameters. Subsequently, we normalized the effects of heavy ion irradiation by examining the threshold voltage shift (\u0000<inline-formula> <tex-math>$Delta V _{mathrm {TH}}$ </tex-math></inline-formula>\u0000) for ionization damage, and the drain-leakage current variation (\u0000<inline-formula> <tex-math>$Delta I _{mathrm {DLC}}$ </tex-math></inline-formula>\u0000) and drain-saturation current variation (\u0000<inline-formula> <tex-math>$Delta I _{mathrm {DSC}}$ </tex-math></inline-formula>\u0000) for displacement damage. Our findings reveal that the displacement damage, characterized by the \u0000<inline-formula> <tex-math>$Delta I _{mathrm {DLC}}$ </tex-math></inline-formula>\u0000 indicator, serves as a dependable metric for normalizing the impact across varying ion species. This discovery is significant for the equivalent study of different kinds of spaceborne charged ion irradiation in power VDMOS transistors.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":null,"pages":null},"PeriodicalIF":1.9,"publicationDate":"2024-07-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141781629","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-19DOI: 10.1109/TNS.2024.3431436
Isabella R. Wynocker;En Xia Zhang;Robert A. Reed;Ronald D. Schrimpf;Antonio Arreghini;João P. Bastos;Geert Van den Bosch;Dimitri Linten;Daniel M. Fleetwood
Random telegraph noise (RTN) measurements are performed on as-processed, programmed, erased, and irradiated 80 nm vertical charge-trapping nand memory transistors. Variations in current with time of up to ±20% are observed during the RTN testing interval. The RTN of these devices is relatively unaffected by irradiation of devices to 500 krad(SiO2). Root-mean-square (rms) magnitudes of measured RTN exceed predictions of number-fluctuation models (NFMs) by up to six-times. This result demonstrates that fluctuations in carrier scattering rates caused by motion and/or reconfiguration of traps at grain boundaries likely lead to a significant fraction of the low-frequency noise and/or RTN in poly-crystalline Si channel, charge-trapping memory devices. The magnitudes of these fluctuations may present significant challenges to the resolution of highly scaled 3-D memory devices.
{"title":"Random Telegraph Noise and Radiation Response of 80 nm Vertical Charge-Trapping NAND Flash Memory Devices With SiON Tunneling Oxide","authors":"Isabella R. Wynocker;En Xia Zhang;Robert A. Reed;Ronald D. Schrimpf;Antonio Arreghini;João P. Bastos;Geert Van den Bosch;Dimitri Linten;Daniel M. Fleetwood","doi":"10.1109/TNS.2024.3431436","DOIUrl":"10.1109/TNS.2024.3431436","url":null,"abstract":"Random telegraph noise (RTN) measurements are performed on as-processed, programmed, erased, and irradiated 80 nm vertical charge-trapping nand memory transistors. Variations in current with time of up to ±20% are observed during the RTN testing interval. The RTN of these devices is relatively unaffected by irradiation of devices to 500 krad(SiO2). Root-mean-square (rms) magnitudes of measured RTN exceed predictions of number-fluctuation models (NFMs) by up to six-times. This result demonstrates that fluctuations in carrier scattering rates caused by motion and/or reconfiguration of traps at grain boundaries likely lead to a significant fraction of the low-frequency noise and/or RTN in poly-crystalline Si channel, charge-trapping memory devices. The magnitudes of these fluctuations may present significant challenges to the resolution of highly scaled 3-D memory devices.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":null,"pages":null},"PeriodicalIF":1.9,"publicationDate":"2024-07-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10604903","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141738018","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-19DOI: 10.1109/TNS.2024.3426972
Maxime Pinson;Pablo Caron;Quentin Gibaru
The goal of this article is to develop the necessary numerical models to study the differences of the induced current pulse shapes of protons and electrons in solid-state detectors (SSDs), all while validating these models with an experimental test bench. The shape of the captured current pulse created by the passage of the particle in the SSD is indicative of the nature of the particle, which we aim to predict using the information in the pulse shape. The performances and limits of such a system are explored here in the scope of proton/electron discrimination in Earth’s radiation belts. This provides a meaningful asset to the methods used in radiation monitors these days, which mostly rely on total energy deposited.
{"title":"Proton and Electron Pulse Shape Discrimination for In Situ Radiation Belt Monitoring","authors":"Maxime Pinson;Pablo Caron;Quentin Gibaru","doi":"10.1109/TNS.2024.3426972","DOIUrl":"10.1109/TNS.2024.3426972","url":null,"abstract":"The goal of this article is to develop the necessary numerical models to study the differences of the induced current pulse shapes of protons and electrons in solid-state detectors (SSDs), all while validating these models with an experimental test bench. The shape of the captured current pulse created by the passage of the particle in the SSD is indicative of the nature of the particle, which we aim to predict using the information in the pulse shape. The performances and limits of such a system are explored here in the scope of proton/electron discrimination in Earth’s radiation belts. This provides a meaningful asset to the methods used in radiation monitors these days, which mostly rely on total energy deposited.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":null,"pages":null},"PeriodicalIF":1.9,"publicationDate":"2024-07-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141738019","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-19DOI: 10.1109/TNS.2024.3431281
Tomasz Rajkowski;Jérôme Boch;Frédéric Saigné;Pierre-Xiao Wang;Sławomir Wronka;Michał Matusiak;Adam Wasilewski
We present and analyze system-level total ionizing dose (TID) tests of the simple analog system, point-of-load (PoL) dc/dc converter from 3D Plus, which was already qualified up to 50 krad(SiO2) based on component-level tests. TID response varied with the radiation facility for several parts; however, extensive testing with one part has shown significant differences in the TID level of functional failure observed for different operation modes (configurations): depending on the operating configuration of the device, the observed TID level of failure varies from about 60 krad(SiO2) to more than 400 krad(SiO2). These differences are depicted with the use of the safe operating area (SOA) plot for the system, which incorporates main system functional parameters. We also explore the potential utilization of the SOA concept in defining the system’s TID performance, employing a range of TID thresholds rather than relying on a singular value.
我们介绍并分析了对 3D Plus 的简单模拟系统、负载点 (PoL) 直流/直流转换器进行的系统级总电离剂量 (TID) 测试。几个部件的 TID 响应随辐射设施的不同而变化；然而，对一个部件进行的广泛测试表明，在不同操作模式（配置）下观察到的功能故障 TID 水平存在显著差异：根据设备的操作配置，观察到的故障 TID 水平从大约 60 krad(SiO2) 到超过 400 krad(SiO2) 不等。这些差异可以通过系统的安全运行区域图（SOA）来描述，其中包含了主要的系统功能参数。我们还探索了利用 SOA 概念定义系统 TID 性能的可能性，采用了一系列 TID 临界值，而不是依赖于一个单一的值。
{"title":"TID Level of Failure Dependence From Operating Configuration of the System—Space Class DC/DC Converter Case Study","authors":"Tomasz Rajkowski;Jérôme Boch;Frédéric Saigné;Pierre-Xiao Wang;Sławomir Wronka;Michał Matusiak;Adam Wasilewski","doi":"10.1109/TNS.2024.3431281","DOIUrl":"10.1109/TNS.2024.3431281","url":null,"abstract":"We present and analyze system-level total ionizing dose (TID) tests of the simple analog system, point-of-load (PoL) dc/dc converter from 3D Plus, which was already qualified up to 50 krad(SiO2) based on component-level tests. TID response varied with the radiation facility for several parts; however, extensive testing with one part has shown significant differences in the TID level of functional failure observed for different operation modes (configurations): depending on the operating configuration of the device, the observed TID level of failure varies from about 60 krad(SiO2) to more than 400 krad(SiO2). These differences are depicted with the use of the safe operating area (SOA) plot for the system, which incorporates main system functional parameters. We also explore the potential utilization of the SOA concept in defining the system’s TID performance, employing a range of TID thresholds rather than relying on a singular value.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":null,"pages":null},"PeriodicalIF":1.9,"publicationDate":"2024-07-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141738016","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-19DOI: 10.1109/TNS.2024.3430044
Hugo Cintas;Frédéric Wrobel;Frédéric Saigné;Marine Ruffenach;Damien Herrera;Françoise Bezerra;Julien Mekki;Athina Varotsou
This article compares three models of the atmospheric radiative environment: 1) model of atmospheric ionizing radiative effects (MAIREs); 2) Excel-based Program for calculating Atmospheric Cosmic-ray Spectrum (EXPACS); and 3) radiation atmospheric model for single-event effect simulation (RAMSEES) to experimental fluxes measured at different altitudes. The PIX Centre National d’Etudes Spatiales (CNES) instrument recorded the fluxes during five stratospheric flights. There is no standard way to model the atmospheric radiative environment today. Each model uses its own Monte Carlo toolkit, modeling the atmosphere and primary particles. The RAMSEES was created by Geant4 simulation of the Extensive Air Shower (EAS) phenomenon generated by highly energetic Galactic Cosmic Rays (GCRs) in 100 km of atmosphere. By using PIX fluxes, this article aims to benchmark the models with experimental data at multiple altitudes. Three integral fluxes were used in this article at a comparison point: 1) photons >0.823 MeV; 2) electrons >10.27 MeV; and 3) protons >80 MeV. MAIRE shows good agreement with all the experimental fluxes from 5 to 40 km. MAIRE predictions show remarkable agreement with the PIX photon fluxes. EXPACS predictions are in a magnitude order of PIX measurements but tend to underestimate the fluxes. Finally, RAMSEES predictions agree with PIX fluxes for protons, electrons, and photons at altitudes of 5–32.5 km. Moreover, RAMSEES shows significant agreement with PIX proton fluxes.
{"title":"Proton, Electron, and Photon Flux Measurement and Simulation During Stratospheric Balloon Flights","authors":"Hugo Cintas;Frédéric Wrobel;Frédéric Saigné;Marine Ruffenach;Damien Herrera;Françoise Bezerra;Julien Mekki;Athina Varotsou","doi":"10.1109/TNS.2024.3430044","DOIUrl":"10.1109/TNS.2024.3430044","url":null,"abstract":"This article compares three models of the atmospheric radiative environment: 1) model of atmospheric ionizing radiative effects (MAIREs); 2) Excel-based Program for calculating Atmospheric Cosmic-ray Spectrum (EXPACS); and 3) radiation atmospheric model for single-event effect simulation (RAMSEES) to experimental fluxes measured at different altitudes. The PIX Centre National d’Etudes Spatiales (CNES) instrument recorded the fluxes during five stratospheric flights. There is no standard way to model the atmospheric radiative environment today. Each model uses its own Monte Carlo toolkit, modeling the atmosphere and primary particles. The RAMSEES was created by Geant4 simulation of the Extensive Air Shower (EAS) phenomenon generated by highly energetic Galactic Cosmic Rays (GCRs) in 100 km of atmosphere. By using PIX fluxes, this article aims to benchmark the models with experimental data at multiple altitudes. Three integral fluxes were used in this article at a comparison point: 1) photons >0.823 MeV; 2) electrons >10.27 MeV; and 3) protons >80 MeV. MAIRE shows good agreement with all the experimental fluxes from 5 to 40 km. MAIRE predictions show remarkable agreement with the PIX photon fluxes. EXPACS predictions are in a magnitude order of PIX measurements but tend to underestimate the fluxes. Finally, RAMSEES predictions agree with PIX fluxes for protons, electrons, and photons at altitudes of 5–32.5 km. Moreover, RAMSEES shows significant agreement with PIX proton fluxes.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":null,"pages":null},"PeriodicalIF":1.9,"publicationDate":"2024-07-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141738017","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-18DOI: 10.1109/TNS.2024.3426184
{"title":"IEEE Nuclear Science Symposium, Medical Imaging Conference, and Room Temperature Semiconductor Detector Conference","authors":"","doi":"10.1109/TNS.2024.3426184","DOIUrl":"https://doi.org/10.1109/TNS.2024.3426184","url":null,"abstract":"","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":null,"pages":null},"PeriodicalIF":1.9,"publicationDate":"2024-07-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10604691","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141725615","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-18DOI: 10.1109/tns.2024.3429622
Beatrice Pedretti, Giacomo Borghi, Giacomo Ticchi, Davide Di Vita, Marco Carminati, Carlo Fiorini
{"title":"Charge Sharing Assessment and Active Collimation in Monolithic Arrays of Silicon Drift Detectors","authors":"Beatrice Pedretti, Giacomo Borghi, Giacomo Ticchi, Davide Di Vita, Marco Carminati, Carlo Fiorini","doi":"10.1109/tns.2024.3429622","DOIUrl":"https://doi.org/10.1109/tns.2024.3429622","url":null,"abstract":"","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":null,"pages":null},"PeriodicalIF":1.8,"publicationDate":"2024-07-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141738020","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-18DOI: 10.1109/TNS.2024.3427510
{"title":"TechRxiv: Share Your Preprint Research with the World!","authors":"","doi":"10.1109/TNS.2024.3427510","DOIUrl":"https://doi.org/10.1109/TNS.2024.3427510","url":null,"abstract":"","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":null,"pages":null},"PeriodicalIF":1.9,"publicationDate":"2024-07-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10604672","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141725522","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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