Pub Date : 2024-09-18DOI: 10.1109/TNS.2024.3460248
{"title":"TechRxiv: Share Your Preprint Research with the World!","authors":"","doi":"10.1109/TNS.2024.3460248","DOIUrl":"https://doi.org/10.1109/TNS.2024.3460248","url":null,"abstract":"","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"71 9","pages":"2195-2195"},"PeriodicalIF":1.9,"publicationDate":"2024-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10683874","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142246435","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-18DOI: 10.1109/TNS.2024.3455908
{"title":"IEEE Transactions on Nuclear Science information for authors","authors":"","doi":"10.1109/TNS.2024.3455908","DOIUrl":"https://doi.org/10.1109/TNS.2024.3455908","url":null,"abstract":"","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"71 9","pages":"C3-C3"},"PeriodicalIF":1.9,"publicationDate":"2024-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10683871","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142246527","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-18DOI: 10.1109/TNS.2024.3456988
{"title":"IEEE Nuclear Science Symposium, Medical Imaging Conference, and Room Temperature Semiconductor Detector Conference","authors":"","doi":"10.1109/TNS.2024.3456988","DOIUrl":"https://doi.org/10.1109/TNS.2024.3456988","url":null,"abstract":"","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"71 9","pages":"2194-2194"},"PeriodicalIF":1.9,"publicationDate":"2024-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10683873","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142246542","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-17DOI: 10.1109/tns.2024.3462595
D. Levit, M. Bessner, D. Biswas, D. Charlet, T. Higuchi, R. Itoh, E. Jules, P. Kapusta, T. Kunigo, Y.-T. Lai, T. S. Lau, M. Nakao, K. Nishimura, S.-H. Park, E. Plaige, H. Purwar, P. Robbe, S. Y. Suzuki, M. Taurigna, G. Varner, S. Yamada, Q.-D. Zhou
{"title":"Software-Assisted Event Builder for Belle II Experiment","authors":"D. Levit, M. Bessner, D. Biswas, D. Charlet, T. Higuchi, R. Itoh, E. Jules, P. Kapusta, T. Kunigo, Y.-T. Lai, T. S. Lau, M. Nakao, K. Nishimura, S.-H. Park, E. Plaige, H. Purwar, P. Robbe, S. Y. Suzuki, M. Taurigna, G. Varner, S. Yamada, Q.-D. Zhou","doi":"10.1109/tns.2024.3462595","DOIUrl":"https://doi.org/10.1109/tns.2024.3462595","url":null,"abstract":"","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"2 1","pages":""},"PeriodicalIF":1.8,"publicationDate":"2024-09-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142265679","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-17DOI: 10.1109/tns.2024.3462484
B. Cheng, F. Morel, A. Dorokhov, H. Pham, G. Bertolone, A. Himmi, C. Colledani, J. Qin, L. Zhao, C. Hu-Guo
{"title":"A Pixel Matrix Prototype Chip With High-Precision Time Measurement For CMOS Pixel Detectors","authors":"B. Cheng, F. Morel, A. Dorokhov, H. Pham, G. Bertolone, A. Himmi, C. Colledani, J. Qin, L. Zhao, C. Hu-Guo","doi":"10.1109/tns.2024.3462484","DOIUrl":"https://doi.org/10.1109/tns.2024.3462484","url":null,"abstract":"","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"35 1","pages":""},"PeriodicalIF":1.8,"publicationDate":"2024-09-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142265678","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-16DOI: 10.1109/TNS.2024.3461964
Sang Hao;Yuan Hengzhou;Guo Yang;Chen Xiaowen;Liu Sheng;Liang Bin;Liu Jingtian;Xu Weixia
This article presents a single-event transient (SET) tolerant phase-locked loops (PLLs) with a wide-tuning-range source-feedforward ring voltage-controlled oscillator (SFRVCO), suitable for serial rapid I/O (SRIO). The analysis of impulse sensitivity function (ISF) shows that the proposed oscillator has lower phase noise, and its tuning range reaches 0.9–6.6 GHz under the control of adjustable current source with high power supply rejection ratio (PSRR), which also exhibits better SET tolerance. Implemented in a 28-nm CMOS process, the proposed SFRVCO achieves a phase noise of −96.7 dBc/Hz at 1-MHz offset from a 2.5-GHz carrier, occupying a core area of 0.0008 mm2. Laser experiments indicate an irradiation threshold of 600 pJ.
{"title":"A Wide-Tuning PLL With SET-Tolerant Quadrature Ring VCO for Serial Rapid I/O","authors":"Sang Hao;Yuan Hengzhou;Guo Yang;Chen Xiaowen;Liu Sheng;Liang Bin;Liu Jingtian;Xu Weixia","doi":"10.1109/TNS.2024.3461964","DOIUrl":"https://doi.org/10.1109/TNS.2024.3461964","url":null,"abstract":"This article presents a single-event transient (SET) tolerant phase-locked loops (PLLs) with a wide-tuning-range source-feedforward ring voltage-controlled oscillator (SFRVCO), suitable for serial rapid I/O (SRIO). The analysis of impulse sensitivity function (ISF) shows that the proposed oscillator has lower phase noise, and its tuning range reaches 0.9–6.6 GHz under the control of adjustable current source with high power supply rejection ratio (PSRR), which also exhibits better SET tolerance. Implemented in a 28-nm CMOS process, the proposed SFRVCO achieves a phase noise of −96.7 dBc/Hz at 1-MHz offset from a 2.5-GHz carrier, occupying a core area of 0.0008 mm2. Laser experiments indicate an irradiation threshold of 600 pJ.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"71 11","pages":"2409-2416"},"PeriodicalIF":1.9,"publicationDate":"2024-09-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142645540","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This study examines the radiation-induced effects on commercial 4N49 optocouplers by measuring their response at different temperatures. The devices under test (DUTs) are subjected to a series of total doses. At each accumulated dose, the devices are characterized at several temperatures between -25 °C and 100 °C. The results demonstrate that irradiation has no negative effects on the light-emitting diode (LED). The current gain of the phototransistor decreases significantly after irradiation. For a constant base current, the gain degradation increases with increasing temperature. The current transfer ratio (CTR) of the optocoupler decreases after irradiation, which is dominated by the gain degradation of the phototransistor. Temperature dependence of the radiation-induced parametric degradation varies with the total ionizing dose (TID) and the forward current of the LED. Specifically, an unusual increase in the photoresponse is observed at extremely low LED forward current and high temperature, which originates from the increased reverse leakage current of the collector-base (CB) junction of the phototransistor.
本研究通过测量商用 4N49 光耦合器在不同温度下的响应，研究了辐射对其造成的影响。被测设备（DUT）受到一系列总剂量的辐射。在每个累积剂量下，器件在-25 °C到100 °C之间的几个温度下进行表征。结果表明，辐照对发光二极管（LED）没有负面影响。光电晶体管的电流增益在辐照后显著下降。在基极电流不变的情况下，增益衰减随温度升高而增加。光耦合器的电流传输比（CTR）在辐照后下降，这主要是由于光电晶体管的增益衰减造成的。辐射引起的参数衰减与温度的关系随总电离剂量（TID）和发光二极管的正向电流而变化。具体来说，在极低的 LED 正向电流和较高的温度下，会观察到光响应的异常增加，这是由于光电晶体管的集电极-基极（CB）结的反向漏电流增加所致。
{"title":"Effect of Characterization Temperature on the Radiation Induced Degradation of Optocouplers","authors":"Cen Xiong;Heyi Li;Binghuang Duan;Xianguo Xu;Hongchao Zhao;Quanyou Chen;Chao Zeng","doi":"10.1109/TNS.2024.3460390","DOIUrl":"https://doi.org/10.1109/TNS.2024.3460390","url":null,"abstract":"This study examines the radiation-induced effects on commercial 4N49 optocouplers by measuring their response at different temperatures. The devices under test (DUTs) are subjected to a series of total doses. At each accumulated dose, the devices are characterized at several temperatures between -25 °C and 100 °C. The results demonstrate that irradiation has no negative effects on the light-emitting diode (LED). The current gain of the phototransistor decreases significantly after irradiation. For a constant base current, the gain degradation increases with increasing temperature. The current transfer ratio (CTR) of the optocoupler decreases after irradiation, which is dominated by the gain degradation of the phototransistor. Temperature dependence of the radiation-induced parametric degradation varies with the total ionizing dose (TID) and the forward current of the LED. Specifically, an unusual increase in the photoresponse is observed at extremely low LED forward current and high temperature, which originates from the increased reverse leakage current of the collector-base (CB) junction of the phototransistor.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"71 10","pages":"2272-2279"},"PeriodicalIF":1.9,"publicationDate":"2024-09-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142450933","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-11DOI: 10.1109/tns.2024.3457038
Viacheslav Filimonov
{"title":"L1Topo: The Level-1 Topological Processor for ATLAS Phase-I Upgrade and its Firmware Evolution for Use within the Phase-II Global Trigger","authors":"Viacheslav Filimonov","doi":"10.1109/tns.2024.3457038","DOIUrl":"https://doi.org/10.1109/tns.2024.3457038","url":null,"abstract":"","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"68 1","pages":""},"PeriodicalIF":1.8,"publicationDate":"2024-09-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142189468","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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