Pub Date : 2004-07-11DOI: 10.1109/IVNC.2004.1355014
J. Schnell, E. Minoux, L. Gangloff, P. Vincent, P. Legagneux, D. Dieurnegard, J. David, F. Peauger, L. Hudanski, K. Teo, R. Lacerda, M. Chhowalla, D. Hasko, H. Ahmed, G. Amaratunga, W. Milne, L. Vila, L. Dauginet-De Pra, S. Demoustier‐Champagne, E. Ferain, R. Legras, L. Piraux, O. Groening, H. De Raedt, K. Michielsen
We study high current density nanofilament cathodes for microwave amplifiers. Two different types of aligned nanofilament array have been studied: first, metallic nanowires grown by electrodeposition into nanoporous templates at very low temperature (T<100/spl deg/C) on a silicon wafer; second, carbon nanotubes/nanofibers (CNs) grown by catalytic plasma enhanced chemical vapour deposition. The fabrication process and the field emission properties of these two types of cathodes will be presented. Presently, the best results are obtained with CN cathodes. Arrays of 5.8 /spl mu/m height and 50 nm diameter CNs exhibit geometrical enhancement factor (h/r) of 240/spl plusmn/7.5%. Moreover, currents close to 100 /spl mu/A per emitter have been measured using a scanning anode field emission microscope. Due to these properties, 0.5 /spl times/ 0.5 mm/sup 2/ arrays emit a 2 mA current corresponding to 0.8 A/cm/sup 2/, in DC mode. The use of these cold cathodes in microwave triodes delivering 10 to 50 W at 30 GHz will be discussed for future telecommunication applications.
{"title":"High current density nanofilament cathodes for microwave amplifiers","authors":"J. Schnell, E. Minoux, L. Gangloff, P. Vincent, P. Legagneux, D. Dieurnegard, J. David, F. Peauger, L. Hudanski, K. Teo, R. Lacerda, M. Chhowalla, D. Hasko, H. Ahmed, G. Amaratunga, W. Milne, L. Vila, L. Dauginet-De Pra, S. Demoustier‐Champagne, E. Ferain, R. Legras, L. Piraux, O. Groening, H. De Raedt, K. Michielsen","doi":"10.1109/IVNC.2004.1355014","DOIUrl":"https://doi.org/10.1109/IVNC.2004.1355014","url":null,"abstract":"We study high current density nanofilament cathodes for microwave amplifiers. Two different types of aligned nanofilament array have been studied: first, metallic nanowires grown by electrodeposition into nanoporous templates at very low temperature (T<100/spl deg/C) on a silicon wafer; second, carbon nanotubes/nanofibers (CNs) grown by catalytic plasma enhanced chemical vapour deposition. The fabrication process and the field emission properties of these two types of cathodes will be presented. Presently, the best results are obtained with CN cathodes. Arrays of 5.8 /spl mu/m height and 50 nm diameter CNs exhibit geometrical enhancement factor (h/r) of 240/spl plusmn/7.5%. Moreover, currents close to 100 /spl mu/A per emitter have been measured using a scanning anode field emission microscope. Due to these properties, 0.5 /spl times/ 0.5 mm/sup 2/ arrays emit a 2 mA current corresponding to 0.8 A/cm/sup 2/, in DC mode. The use of these cold cathodes in microwave triodes delivering 10 to 50 W at 30 GHz will be discussed for future telecommunication applications.","PeriodicalId":137345,"journal":{"name":"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129684894","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-07-11DOI: 10.1109/IVNC.2004.1354983
Jianjun Wang, M. Zhu, R. Outlaw, Xin Zhao, D. Manos, B. Holloway, V. Mammana, M. Ray, J. Dalton
A nanometer edged two-dimensional graphite structure, carbon nanosheet, was synthesized by inductively coupled radio-frequency plasma enhanced chemical vapour deposition on a variety of substrates, including metals, semiconductors and insulators. The carbon nanosheets were characterized by scanning electron microscopy, high resolution transmission electron microscopy and Raman spectroscopy. Edges of nanosheets had a uniform thickness of about 1 nm. Typical nanosheets consisted of only a few atomic layers and had a graphitic structure. The high density of atomic scale vertical graphitic edges are potential sites for electron field emission. The carbon nanosheets had a turn-on (threshold 10/spl mu/A/cm/sup 2/) field of about 5 V//spl mu/m and a metallic behavior based on a linear Fowler-Nordheim plot. This sheet-like carbon nanostructure is expected to be a robust edge emitter.
采用电感耦合射频等离子体增强化学气相沉积技术，在金属、半导体和绝缘体等多种衬底上合成了一种纳米边缘二维石墨结构——碳纳米片。采用扫描电镜、高分辨率透射电镜和拉曼光谱对碳纳米片进行了表征。纳米片的边缘厚度均匀，约为1 nm。典型的纳米片仅由几个原子层组成，具有石墨结构。高密度的原子尺度垂直石墨边缘是电子场发射的潜在位点。碳纳米片具有约5 V//spl mu/ a /cm/sup 2/的导通(阈值10/spl mu/ a /cm/sup 2/)场和基于线性Fowler-Nordheim图的金属行为。这种片状碳纳米结构有望成为坚固的边缘发射器。
{"title":"Synthesis and field emission properties of carbon nanosheets","authors":"Jianjun Wang, M. Zhu, R. Outlaw, Xin Zhao, D. Manos, B. Holloway, V. Mammana, M. Ray, J. Dalton","doi":"10.1109/IVNC.2004.1354983","DOIUrl":"https://doi.org/10.1109/IVNC.2004.1354983","url":null,"abstract":"A nanometer edged two-dimensional graphite structure, carbon nanosheet, was synthesized by inductively coupled radio-frequency plasma enhanced chemical vapour deposition on a variety of substrates, including metals, semiconductors and insulators. The carbon nanosheets were characterized by scanning electron microscopy, high resolution transmission electron microscopy and Raman spectroscopy. Edges of nanosheets had a uniform thickness of about 1 nm. Typical nanosheets consisted of only a few atomic layers and had a graphitic structure. The high density of atomic scale vertical graphitic edges are potential sites for electron field emission. The carbon nanosheets had a turn-on (threshold 10/spl mu/A/cm/sup 2/) field of about 5 V//spl mu/m and a metallic behavior based on a linear Fowler-Nordheim plot. This sheet-like carbon nanostructure is expected to be a robust edge emitter.","PeriodicalId":137345,"journal":{"name":"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)","volume":"122 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131077635","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-07-11DOI: 10.1109/IVNC.2004.1355007
V. Semet, V. Binh, J.P. Zhang, J. Yang, M.A. Khan, R. Tsu
Multilayer planar nanostructured solid-state field-controlled emission (SSE) are studied. SSE is an approach to control the effective surface barrier for electron emission by monitoring the space charge value of an ultra-thin layer at the surface, or in other terms to lower the effective surface barrier by modifying the electronic properties of the underneath surface layer. A 0.15 /spl mu/m-thick Si-doped AlGaN layer with Al-content graded from 40% to 15% was deposited on a SiC substrate. It served as the conducting buffer layer. The finished surface was characterized to be atomically smooth by atomic force microscope. The I-V measurements were performed with a scanning anode field emission microscope (SAFEM). Two mechanisms were found to be present, first is tunneling field emission through a lowering work function. The electrons are emitted by a field emission mechanism from the quantized sub-bands inside the GaN quantum well, given a current density J/sub FN/. The second mechanism occurs for elevated temperatures, i.e. k/sub B/T > 0.8 eV, when hot electrons can jump over the first barrier located between the conductive substrate and the Al/sub 0.5/Ga/sub 0.5/N ultra-thin layer. As the second barrier at the surface is lower (less than 0.5 eV due to space charge) these electrons will emit directly. This first barrier controls the variation of the emitted current J/sub TH/ with temperature. In this dual-barrier model, the measured total emission current, J/sub mes/, will be the sum of both contributions, J/sub mes/ = J/sub FN/ + J/sub TH/.
{"title":"Multilayer planar nanostructured SSE cathodes","authors":"V. Semet, V. Binh, J.P. Zhang, J. Yang, M.A. Khan, R. Tsu","doi":"10.1109/IVNC.2004.1355007","DOIUrl":"https://doi.org/10.1109/IVNC.2004.1355007","url":null,"abstract":"Multilayer planar nanostructured solid-state field-controlled emission (SSE) are studied. SSE is an approach to control the effective surface barrier for electron emission by monitoring the space charge value of an ultra-thin layer at the surface, or in other terms to lower the effective surface barrier by modifying the electronic properties of the underneath surface layer. A 0.15 /spl mu/m-thick Si-doped AlGaN layer with Al-content graded from 40% to 15% was deposited on a SiC substrate. It served as the conducting buffer layer. The finished surface was characterized to be atomically smooth by atomic force microscope. The I-V measurements were performed with a scanning anode field emission microscope (SAFEM). Two mechanisms were found to be present, first is tunneling field emission through a lowering work function. The electrons are emitted by a field emission mechanism from the quantized sub-bands inside the GaN quantum well, given a current density J/sub FN/. The second mechanism occurs for elevated temperatures, i.e. k/sub B/T > 0.8 eV, when hot electrons can jump over the first barrier located between the conductive substrate and the Al/sub 0.5/Ga/sub 0.5/N ultra-thin layer. As the second barrier at the surface is lower (less than 0.5 eV due to space charge) these electrons will emit directly. This first barrier controls the variation of the emitted current J/sub TH/ with temperature. In this dual-barrier model, the measured total emission current, J/sub mes/, will be the sum of both contributions, J/sub mes/ = J/sub FN/ + J/sub TH/.","PeriodicalId":137345,"journal":{"name":"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131346252","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-07-11DOI: 10.1109/IVNC.2004.1354948
X. Tang, L. Chan
Nano-structured barium zirconate titanate Ba(Ti/sub 1-x/Zr/sub x/)O/sub 3/ (BTZ, x=0.20, 0.25,0.30 and 0.35, abbreviated as BTZ20, BTZ25, BTZ30, and BTZ35, respectively) thin films on Pt/Ti/SiO/sub 2//Si(100) substrates have been prepared by pulse laser deposition (PLD) using a KrF Excimer Laser, lambda Physik Complex (/spl lambda/= 248 nm, 650 mJ, 25 ns). The targets are BTZ20, BTZ25, BTZ30 and BTZ35. The films were deposited at a laser repetition rate of 10 Hz and pulse laser energy of 300 mJ. The deposition rate was 20 nm/min. The oxygen pressure was an important factor and was kept 200 mTorr. Finally, the thin films were crystallized in situ at 650/spl deg/C in 400 mTorr of oxygen for 20 min and cooled down slowly to room temperature. The thin films were characterized using XRD and SEM. Dielectric measurements revealed that the thin films a relaxor behavior and have a diffuse phase transition when the Zr content of x increased from 0.20 to 0.35. The tunability decreased and figure of merit increased when the Zr content of x increased from 0.20 to 0.35, respectively for BTZ the thin films. Both of BTZ thin films with Zr content of 0.30 and 0.35 have low dielectric constant and high figure of merit. Therefore, the BTZ thin film is an attractive candidate for microwave tunable device applications.
{"title":"Nonlinear dielectric properties of Ba(Ti,Zr)O/sub 3/ thin films for tunable microwave device applications","authors":"X. Tang, L. Chan","doi":"10.1109/IVNC.2004.1354948","DOIUrl":"https://doi.org/10.1109/IVNC.2004.1354948","url":null,"abstract":"Nano-structured barium zirconate titanate Ba(Ti/sub 1-x/Zr/sub x/)O/sub 3/ (BTZ, x=0.20, 0.25,0.30 and 0.35, abbreviated as BTZ20, BTZ25, BTZ30, and BTZ35, respectively) thin films on Pt/Ti/SiO/sub 2//Si(100) substrates have been prepared by pulse laser deposition (PLD) using a KrF Excimer Laser, lambda Physik Complex (/spl lambda/= 248 nm, 650 mJ, 25 ns). The targets are BTZ20, BTZ25, BTZ30 and BTZ35. The films were deposited at a laser repetition rate of 10 Hz and pulse laser energy of 300 mJ. The deposition rate was 20 nm/min. The oxygen pressure was an important factor and was kept 200 mTorr. Finally, the thin films were crystallized in situ at 650/spl deg/C in 400 mTorr of oxygen for 20 min and cooled down slowly to room temperature. The thin films were characterized using XRD and SEM. Dielectric measurements revealed that the thin films a relaxor behavior and have a diffuse phase transition when the Zr content of x increased from 0.20 to 0.35. The tunability decreased and figure of merit increased when the Zr content of x increased from 0.20 to 0.35, respectively for BTZ the thin films. Both of BTZ thin films with Zr content of 0.30 and 0.35 have low dielectric constant and high figure of merit. Therefore, the BTZ thin film is an attractive candidate for microwave tunable device applications.","PeriodicalId":137345,"journal":{"name":"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)","volume":"69 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129242607","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-07-11DOI: 10.1109/IVNC.2004.1355010
D. Garner, N.Z. Mohd Zamin
In the reported work, gold nanowires have been grown between two coplanar electrodes on an insulating substrate, with the resulting gold nanowires lying along the insulating substrate. It was found that there was a complicated relationship between the dielectrophoresis (DEP) parameters (AC supply voltage and frequency, electrolyte and colloid concentration) and the shape and growth rate of the resulting wires. These were optimised to give slower growth rates such that shorter, sturdier wires could be formed which did not collapse on washing and drying of the sample. Despite the high aspect ratio of the wires, field-emission characteristics were not encouraging, the wires displaying an emission current of 1 /spl mu/A/cm/sup 2/ at macroscopic electric fields ranging between 20 to 100 V//spl mu/m, depending upon the sample tested.
{"title":"Growth of gold nanowires by dielectrophoresis for field-emission display applications","authors":"D. Garner, N.Z. Mohd Zamin","doi":"10.1109/IVNC.2004.1355010","DOIUrl":"https://doi.org/10.1109/IVNC.2004.1355010","url":null,"abstract":"In the reported work, gold nanowires have been grown between two coplanar electrodes on an insulating substrate, with the resulting gold nanowires lying along the insulating substrate. It was found that there was a complicated relationship between the dielectrophoresis (DEP) parameters (AC supply voltage and frequency, electrolyte and colloid concentration) and the shape and growth rate of the resulting wires. These were optimised to give slower growth rates such that shorter, sturdier wires could be formed which did not collapse on washing and drying of the sample. Despite the high aspect ratio of the wires, field-emission characteristics were not encouraging, the wires displaying an emission current of 1 /spl mu/A/cm/sup 2/ at macroscopic electric fields ranging between 20 to 100 V//spl mu/m, depending upon the sample tested.","PeriodicalId":137345,"journal":{"name":"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)","volume":"78 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126325446","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-07-11DOI: 10.1109/IVNC.2004.1354916
X. Zhao, R. Outlaw, R. Champion, J.J. Wang, D. Manos, B. Holloway
In this paper, measurements of field emission taken on a molybdenum<110> microtip under ultrahigh vacuum conditions and as a function of oxygen exposure were reported. Auger electron spectroscopy (AES) was used to examine the clean and oxygen saturated surface of the Mo surface and the peak-to-peak ratio of O (KLL) to Mo (LMM) as a function of oxygen exposure.
{"title":"Field emission of clean and oxidized Mo<110> microtips","authors":"X. Zhao, R. Outlaw, R. Champion, J.J. Wang, D. Manos, B. Holloway","doi":"10.1109/IVNC.2004.1354916","DOIUrl":"https://doi.org/10.1109/IVNC.2004.1354916","url":null,"abstract":"In this paper, measurements of field emission taken on a molybdenum<110> microtip under ultrahigh vacuum conditions and as a function of oxygen exposure were reported. Auger electron spectroscopy (AES) was used to examine the clean and oxygen saturated surface of the Mo surface and the peak-to-peak ratio of O (KLL) to Mo (LMM) as a function of oxygen exposure.","PeriodicalId":137345,"journal":{"name":"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)","volume":"189 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126797814","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-07-11DOI: 10.1109/IVNC.2004.1354992
N. Koshida, A. Kojima, T. Ichihara, T. Komoda
The nc-Si emitter operates as a ballistic cold cathode in low vacuum and as a negative ion source in atmospheric pressure. This usefulness is consistent with the ballistic emission model that energetic electrons are generated in nc-Si chains interconnected via thin oxides. The present result indicates further potential of this emitter for various applications in a wide range of pressure and gas ambient.
{"title":"Usefulness of nanocrystalline silicon ballistic emitter for operation in either low-vacuum or atmospheric pressure","authors":"N. Koshida, A. Kojima, T. Ichihara, T. Komoda","doi":"10.1109/IVNC.2004.1354992","DOIUrl":"https://doi.org/10.1109/IVNC.2004.1354992","url":null,"abstract":"The nc-Si emitter operates as a ballistic cold cathode in low vacuum and as a negative ion source in atmospheric pressure. This usefulness is consistent with the ballistic emission model that energetic electrons are generated in nc-Si chains interconnected via thin oxides. The present result indicates further potential of this emitter for various applications in a wide range of pressure and gas ambient.","PeriodicalId":137345,"journal":{"name":"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115845922","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
R. Takalkar, J. Davidson, W. Kang, A. Wisitsora-at, D. Kerns
The fabrication and field emission behavior of micro-patterned polycrystalline edge-shaped diamond field emission arrays is reported. The edge-shaped diamond field emission arrays were fabricated on a silicon substrate utilizing conventional silicon patterning and etching techniques, and CVD diamond deposition via a mold transferring technique. The mold was filled with diamond using a PECVD process. The silicon was back etched to expose the diamond edges. Edge sharpening was achieved by introducing a silicon oxidation step in the mold fabrication process before the diamond deposition step. The oxide grown was /spl sim/3/spl mu/m thick. This oxidation process not only sharpened the edge but also served as a gate dielectric for the triode device. Each edge was 125/spl mu/m in length and 2/spl mu/m in width. The deposited diamond film was characterized using Raman spectroscopy. The fabricated diamond edge emitter arrays were tested in vacuum (10/sup -6/ Torr). A self-aligned gated edge emitter triode from a silicon-on-insulator (SOI) substrate was also fabricated.
{"title":"Edge-shaped diamond field emission arrays","authors":"R. Takalkar, J. Davidson, W. Kang, A. Wisitsora-at, D. Kerns","doi":"10.1116/1.1864061","DOIUrl":"https://doi.org/10.1116/1.1864061","url":null,"abstract":"The fabrication and field emission behavior of micro-patterned polycrystalline edge-shaped diamond field emission arrays is reported. The edge-shaped diamond field emission arrays were fabricated on a silicon substrate utilizing conventional silicon patterning and etching techniques, and CVD diamond deposition via a mold transferring technique. The mold was filled with diamond using a PECVD process. The silicon was back etched to expose the diamond edges. Edge sharpening was achieved by introducing a silicon oxidation step in the mold fabrication process before the diamond deposition step. The oxide grown was /spl sim/3/spl mu/m thick. This oxidation process not only sharpened the edge but also served as a gate dielectric for the triode device. Each edge was 125/spl mu/m in length and 2/spl mu/m in width. The deposited diamond film was characterized using Raman spectroscopy. The fabricated diamond edge emitter arrays were tested in vacuum (10/sup -6/ Torr). A self-aligned gated edge emitter triode from a silicon-on-insulator (SOI) substrate was also fabricated.","PeriodicalId":137345,"journal":{"name":"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121755632","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Jae-Hong Park, J. Moon, Jae-Hee Han, A. Berdinsky, J. Yoo, J. Nam, J. Park, C.G. Lee, D. Choi, Byeong Kyoo Shon, H. Chung, S. Kwon
Photosensitive carbon nanotube (CNT) paste was synthesized with spin on glass (SOG) as inorganic binder. The field emission characteristics of this CNT paste was studied. CNT field emitter arrays (FEAs) was then fabricated using screen-printing method, photolithography and vacuum-in-line sealing technology. It is concluded that the diode type FEA using CNT paste with SOG can be used for lighting system applications such as the back light unit in TFT-LCD.
{"title":"Screen printed carbon nanotube field emitter array for lighting source application","authors":"Jae-Hong Park, J. Moon, Jae-Hee Han, A. Berdinsky, J. Yoo, J. Nam, J. Park, C.G. Lee, D. Choi, Byeong Kyoo Shon, H. Chung, S. Kwon","doi":"10.1116/1.1851535","DOIUrl":"https://doi.org/10.1116/1.1851535","url":null,"abstract":"Photosensitive carbon nanotube (CNT) paste was synthesized with spin on glass (SOG) as inorganic binder. The field emission characteristics of this CNT paste was studied. CNT field emitter arrays (FEAs) was then fabricated using screen-printing method, photolithography and vacuum-in-line sealing technology. It is concluded that the diode type FEA using CNT paste with SOG can be used for lighting system applications such as the back light unit in TFT-LCD.","PeriodicalId":137345,"journal":{"name":"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126325577","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-07-11DOI: 10.1109/IVNC.2004.1354912
Pi Jun, H. Uh, Byungkwan Kwak, Hyung Wook Noh, S. Park, Sungwook Ko, E. Cho, J. Lee
A new structure of triode-type carbon nanotube-field emitter arrays (CNT-FEAs) is proposed whose extraction gate is surrounded by CNT emitters. 3-dimensional numerical calculations of electrostatic potential for the proposed CNT-FEA was carried out using the finite element method and the results were compare with those of conventional CNT-FEAs.
{"title":"Numerical analysis of carbon nanotube field emitter arrays with embedded electron beam focusing structure","authors":"Pi Jun, H. Uh, Byungkwan Kwak, Hyung Wook Noh, S. Park, Sungwook Ko, E. Cho, J. Lee","doi":"10.1109/IVNC.2004.1354912","DOIUrl":"https://doi.org/10.1109/IVNC.2004.1354912","url":null,"abstract":"A new structure of triode-type carbon nanotube-field emitter arrays (CNT-FEAs) is proposed whose extraction gate is surrounded by CNT emitters. 3-dimensional numerical calculations of electrostatic potential for the proposed CNT-FEA was carried out using the finite element method and the results were compare with those of conventional CNT-FEAs.","PeriodicalId":137345,"journal":{"name":"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129877486","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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