Pub Date : 2004-07-11DOI: 10.1109/IVNC.2004.1354949
L. Wang, K. Aplin, B. Kent, S. Huq, R. Stevens, G. Thomas, I. Loader, C. Collingwood, A. Malik, H. Blom
This paper describes the development of coatings for silicon field emission arrays used as an electron source to maintain spacecraft charge neutrality. The neutraliser specification includes 6 mA emission current at 0.2 W/mA and the instrument is required to operate for a lifetime of >6000 hours. To make the field emission device more resistant to ion bombardment and thermal failure, the effects of adding a layer of aluminium nitride (AlN), and thermal oxidation of the chromium gate electrode have been investigated. Different thicknesses of AlN film have been sputter coated onto the emitters under a variety of chamber pressure conditions. The thermally oxidised samples have been analysed by ESCA (Electron Spectroscopy for Chemical Analysis) and ERDA (Elastic Recoil Detection Analysis). For the oxidised chromium the composition is Cr = 0.31 and O = 0.69.
本文介绍了用于保持航天器电荷中性的电子源硅场发射阵列涂层的研究进展。中和器规格包括6 mA的发射电流，0.2 W/mA，仪器需要工作寿命>6000小时。为了使场发射器件更能抵抗离子轰击和热失效，研究了添加氮化铝(AlN)层和铬栅电极热氧化对场发射器件的影响。在不同的腔压条件下，在发射体上溅射镀有不同厚度的氮化铝膜。用ESCA(电子能谱化学分析)和ERDA(弹性后坐力检测分析)对热氧化样品进行了分析。氧化铬的组成为Cr = 0.31, O = 0.69。
{"title":"AlN coatings on silicon field emitters and oxidised gates to enhance reliability for space applications","authors":"L. Wang, K. Aplin, B. Kent, S. Huq, R. Stevens, G. Thomas, I. Loader, C. Collingwood, A. Malik, H. Blom","doi":"10.1109/IVNC.2004.1354949","DOIUrl":"https://doi.org/10.1109/IVNC.2004.1354949","url":null,"abstract":"This paper describes the development of coatings for silicon field emission arrays used as an electron source to maintain spacecraft charge neutrality. The neutraliser specification includes 6 mA emission current at 0.2 W/mA and the instrument is required to operate for a lifetime of >6000 hours. To make the field emission device more resistant to ion bombardment and thermal failure, the effects of adding a layer of aluminium nitride (AlN), and thermal oxidation of the chromium gate electrode have been investigated. Different thicknesses of AlN film have been sputter coated onto the emitters under a variety of chamber pressure conditions. The thermally oxidised samples have been analysed by ESCA (Electron Spectroscopy for Chemical Analysis) and ERDA (Elastic Recoil Detection Analysis). For the oxidised chromium the composition is Cr = 0.31 and O = 0.69.","PeriodicalId":137345,"journal":{"name":"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125889309","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-07-11DOI: 10.1109/IVNC.2004.1354885
C. Chuang, Y.‐S. Chen, J.H. Huang, Y. Wong, W. Kang
In the CVD growth of carbon nanotubes (CNTs) on Si, a thin Ti layer is usually deposited prior to the deposition of catalyst to enhance the adhesion of CNTs to Si. In this study, the effect of Ti layer on the growth of CNTs on Si using different catalysts (palladium, nickel, cobalt) by microwave-heated CVD was systematically studied. The details of microstructure characterization and field emission measurement, and the growth of aligned CNTs of emission quality will be presented.
{"title":"Effect of Ti interlayer on the growth of carbon nanotubes on Si by microwave-heated CVD","authors":"C. Chuang, Y.‐S. Chen, J.H. Huang, Y. Wong, W. Kang","doi":"10.1109/IVNC.2004.1354885","DOIUrl":"https://doi.org/10.1109/IVNC.2004.1354885","url":null,"abstract":"In the CVD growth of carbon nanotubes (CNTs) on Si, a thin Ti layer is usually deposited prior to the deposition of catalyst to enhance the adhesion of CNTs to Si. In this study, the effect of Ti layer on the growth of CNTs on Si using different catalysts (palladium, nickel, cobalt) by microwave-heated CVD was systematically studied. The details of microstructure characterization and field emission measurement, and the growth of aligned CNTs of emission quality will be presented.","PeriodicalId":137345,"journal":{"name":"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125937307","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-07-11DOI: 10.1109/IVNC.2004.1354896
J.H. Lee, S.H. Lee, W. Kim, H. Lee, J. Heo, T. Jeong, C. Choi, J.M. Kim
In this report, the direct measurement of the emission sites from practically working CNT emitters is presented using an electron resist (ER) coated anode substrate. It allows checking a detailed emission site distribution from randomly oriented CNT emitters without light spreading effect when using a phosphor screen. The estimation of emission uniformity is best performed by general image comparison containing many dots of the developed ER surface images.
{"title":"Uniformity measurement of electron emission from carbon using electron beam resist","authors":"J.H. Lee, S.H. Lee, W. Kim, H. Lee, J. Heo, T. Jeong, C. Choi, J.M. Kim","doi":"10.1109/IVNC.2004.1354896","DOIUrl":"https://doi.org/10.1109/IVNC.2004.1354896","url":null,"abstract":"In this report, the direct measurement of the emission sites from practically working CNT emitters is presented using an electron resist (ER) coated anode substrate. It allows checking a detailed emission site distribution from randomly oriented CNT emitters without light spreading effect when using a phosphor screen. The estimation of emission uniformity is best performed by general image comparison containing many dots of the developed ER surface images.","PeriodicalId":137345,"journal":{"name":"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)","volume":"136 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123755332","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-07-11DOI: 10.1109/IVNC.2004.1355018
D. Garner, P. French
In this paper, the development of a functioning vacuum magnetic sensor (VMS), based upon the action of the Lorenz force on a field-emitted electron beam, is reported. The fabrication process is compatible with standard CMOS processes. It begins with the growth of a 2 /spl mu/m thick oxide on a silicon substrate followed by the deposition of a 300 nm thick polysilicon layer. LOCOS is used to pattern that polysilicon layer to form a field-emitting tip as the cathode, surrounding extraction gate electrodes, and a split anode placed at distances between 1 /spl mu/m and 500 /spl mu/m from the cathode and gate (over 100 device variations were fabricated using the same mask). It should be noted that the LOCOS step serves the dual purpose of defining the polysilicon electrodes and tip sharpening.
{"title":"Practical realisation of a field-emission-based magnetic sensor","authors":"D. Garner, P. French","doi":"10.1109/IVNC.2004.1355018","DOIUrl":"https://doi.org/10.1109/IVNC.2004.1355018","url":null,"abstract":"In this paper, the development of a functioning vacuum magnetic sensor (VMS), based upon the action of the Lorenz force on a field-emitted electron beam, is reported. The fabrication process is compatible with standard CMOS processes. It begins with the growth of a 2 /spl mu/m thick oxide on a silicon substrate followed by the deposition of a 300 nm thick polysilicon layer. LOCOS is used to pattern that polysilicon layer to form a field-emitting tip as the cathode, surrounding extraction gate electrodes, and a split anode placed at distances between 1 /spl mu/m and 500 /spl mu/m from the cathode and gate (over 100 device variations were fabricated using the same mask). It should be noted that the LOCOS step serves the dual purpose of defining the polysilicon electrodes and tip sharpening.","PeriodicalId":137345,"journal":{"name":"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122338048","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Y. Neo, Y. Suzuki, K. Sagae, H. Shimawaki, H. Mimura
Smith-Purcell radiation (SPR) was generated from a single-tip Si field emitter at a low power level. Single-tip Si field emitters were fabricated using reactive ion etching and thermal oxidation sharpening. Radiation measurements were performed through a viewing port in the visible spectra. SPR was successfully observed at 300-900 nm wavelength, 20-200 nA beam current and 25-30 kV accelerating voltage.
{"title":"Smith-Purcell radiation using a single-tip field emitter","authors":"Y. Neo, Y. Suzuki, K. Sagae, H. Shimawaki, H. Mimura","doi":"10.1116/1.1851536","DOIUrl":"https://doi.org/10.1116/1.1851536","url":null,"abstract":"Smith-Purcell radiation (SPR) was generated from a single-tip Si field emitter at a low power level. Single-tip Si field emitters were fabricated using reactive ion etching and thermal oxidation sharpening. Radiation measurements were performed through a viewing port in the visible spectra. SPR was successfully observed at 300-900 nm wavelength, 20-200 nA beam current and 25-30 kV accelerating voltage.","PeriodicalId":137345,"journal":{"name":"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122513258","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-07-11DOI: 10.1109/IVNC.2004.1354995
C. Kimura, H. Shima, K. Okada, S. Funakawa, T. Sugino
In this paper, addition of carbon (C) atoms into the hexagonal boron nitride (h-BN) film was found to solve cracking or peeling off the substrate. Boron carbon nitride (BCN) nanofilms with a thickness of /spl sim/8-10 nm were grown on n-Si(100) substrates by plasma assisted chemical vapor deposition (PACVD). Field emission characteristics were investigated for (BCN) nanofilms with various C compositions. No degradation of the field emission characteristics occurred for the BCN nanofilms with C compositions lower than 20%. On the other hand, the turn-on electric field increased with carbon composition for the BCN nanofilms with C compositions higher than 20%.
{"title":"Field emission characteristics of BCN nanofilm","authors":"C. Kimura, H. Shima, K. Okada, S. Funakawa, T. Sugino","doi":"10.1109/IVNC.2004.1354995","DOIUrl":"https://doi.org/10.1109/IVNC.2004.1354995","url":null,"abstract":"In this paper, addition of carbon (C) atoms into the hexagonal boron nitride (h-BN) film was found to solve cracking or peeling off the substrate. Boron carbon nitride (BCN) nanofilms with a thickness of /spl sim/8-10 nm were grown on n-Si(100) substrates by plasma assisted chemical vapor deposition (PACVD). Field emission characteristics were investigated for (BCN) nanofilms with various C compositions. No degradation of the field emission characteristics occurred for the BCN nanofilms with C compositions lower than 20%. On the other hand, the turn-on electric field increased with carbon composition for the BCN nanofilms with C compositions higher than 20%.","PeriodicalId":137345,"journal":{"name":"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129855240","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-07-11DOI: 10.1109/IVNC.2004.1354917
M. Zhu, J.J. Wang, R. Outlaw, X. Zhao, B. Holloway, D. Manos, V. Mammana, M. Ray, O. Shenderova
Carbon nanotubes (CNTs) were synthesized by radio frequency (RF) plasma enhanced chemical vapor deposition (PECVD) method on nanoscaled nickel particles as catalyst formed by both a nanosphere lithography (NSL) method and by a plasma pre-treatment of Ni layers on silicon substrates. These CNTs was studied as field emission materials using a novel triode structure for field emission device design by a back-gated structure. Field emission of this back-gated device was characterized using a triode I-V curve measurement.
{"title":"Carbon nanotubes field emitter and back-gated structure","authors":"M. Zhu, J.J. Wang, R. Outlaw, X. Zhao, B. Holloway, D. Manos, V. Mammana, M. Ray, O. Shenderova","doi":"10.1109/IVNC.2004.1354917","DOIUrl":"https://doi.org/10.1109/IVNC.2004.1354917","url":null,"abstract":"Carbon nanotubes (CNTs) were synthesized by radio frequency (RF) plasma enhanced chemical vapor deposition (PECVD) method on nanoscaled nickel particles as catalyst formed by both a nanosphere lithography (NSL) method and by a plasma pre-treatment of Ni layers on silicon substrates. These CNTs was studied as field emission materials using a novel triode structure for field emission device design by a back-gated structure. Field emission of this back-gated device was characterized using a triode I-V curve measurement.","PeriodicalId":137345,"journal":{"name":"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116295012","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-07-11DOI: 10.1109/IVNC.2004.1354952
Tianbao Xie, W. Mackie, P. R. Davis
Field emission measurements were made on single crystal tungsten (100) emitters and were compared to emission measurements after coating with thin-film of zirconium carbide. The tungsten emitters were prepared using standard techniques. The emitter was then heated in steps with associated recording of emission data and images. The results showed a very marked emission confinement to the (100) crystallographic plane after coating with ZrC. The confined emission current was stabilized after falling to a lower lever. In a second set of experiments, (100) tungsten emitters were coated with NbC and ZrC in a separate deposition system and were placed in a 500 nm gate. The emitter were run at room temperature and at round 1800 K, emission confinement was again found on the (100) crystallographic plane. Emission stability was improved when the emitter was run at elevated temperatures. This research provided a method to obtain high current density field emission from a single tungsten tip coated with thin carbide film.
{"title":"Emission confinement on the (100) planes of etched tungsten field emitters coated with thin-film ZrC","authors":"Tianbao Xie, W. Mackie, P. R. Davis","doi":"10.1109/IVNC.2004.1354952","DOIUrl":"https://doi.org/10.1109/IVNC.2004.1354952","url":null,"abstract":"Field emission measurements were made on single crystal tungsten (100) emitters and were compared to emission measurements after coating with thin-film of zirconium carbide. The tungsten emitters were prepared using standard techniques. The emitter was then heated in steps with associated recording of emission data and images. The results showed a very marked emission confinement to the (100) crystallographic plane after coating with ZrC. The confined emission current was stabilized after falling to a lower lever. In a second set of experiments, (100) tungsten emitters were coated with NbC and ZrC in a separate deposition system and were placed in a 500 nm gate. The emitter were run at room temperature and at round 1800 K, emission confinement was again found on the (100) crystallographic plane. Emission stability was improved when the emitter was run at elevated temperatures. This research provided a method to obtain high current density field emission from a single tungsten tip coated with thin carbide film.","PeriodicalId":137345,"journal":{"name":"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)","volume":"38 12","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132692702","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-07-11DOI: 10.1109/IVNC.2004.1354933
C.Y. Li, J.X. Huang, J. Chen, S. Deng, N. Xu
Field emission properties of semiconductor nanostructured CuO films synthesized by both solid-liquid and solid-gas reaction methods under different conditions have been studied and compared. The morphology and structure of the prepared nanostructures CuO films were characterized using scanning electron microscopy, transmission electron microscopy, and X-ray diffraction. Stable field emission at low field from CuO nanostructures has been obtained. The result indicates that nanostructured CuO could be a promising cold cathode material.
{"title":"Preparation and field emission properties of nanostructured CuO emitters","authors":"C.Y. Li, J.X. Huang, J. Chen, S. Deng, N. Xu","doi":"10.1109/IVNC.2004.1354933","DOIUrl":"https://doi.org/10.1109/IVNC.2004.1354933","url":null,"abstract":"Field emission properties of semiconductor nanostructured CuO films synthesized by both solid-liquid and solid-gas reaction methods under different conditions have been studied and compared. The morphology and structure of the prepared nanostructures CuO films were characterized using scanning electron microscopy, transmission electron microscopy, and X-ray diffraction. Stable field emission at low field from CuO nanostructures has been obtained. The result indicates that nanostructured CuO could be a promising cold cathode material.","PeriodicalId":137345,"journal":{"name":"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)","volume":"90 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116289752","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-07-11DOI: 10.1109/IVNC.2004.1355017
N. Negishi, T. Nakada, K. Sakemura, Y. Okuda, H. Satoh, A. Watanabe, T. Yoshikawa, K. Ogasawara, N. Koshida
We recently developed a new-type cold cathode termed HEED (High-Efficiency Electron-emission Device) based on the Metal-Insulator-Semiconductor (MIS) diode. It has been shown that by arranging the device and surface structures the emission characteristics can be significantly improved. Using the advanced HEED as an excitation source, a 4-inch prototype flat panel display has been fabricated on a glass substrate. The panel operates well with a practical brightness at a relatively low driving voltage. The occasional reactivation technique is very effective to prolong the operation life of this device.
{"title":"Characterization of an advanced HEED (High Efficiency Electron-emission Device)","authors":"N. Negishi, T. Nakada, K. Sakemura, Y. Okuda, H. Satoh, A. Watanabe, T. Yoshikawa, K. Ogasawara, N. Koshida","doi":"10.1109/IVNC.2004.1355017","DOIUrl":"https://doi.org/10.1109/IVNC.2004.1355017","url":null,"abstract":"We recently developed a new-type cold cathode termed HEED (High-Efficiency Electron-emission Device) based on the Metal-Insulator-Semiconductor (MIS) diode. It has been shown that by arranging the device and surface structures the emission characteristics can be significantly improved. Using the advanced HEED as an excitation source, a 4-inch prototype flat panel display has been fabricated on a glass substrate. The panel operates well with a practical brightness at a relatively low driving voltage. The occasional reactivation technique is very effective to prolong the operation life of this device.","PeriodicalId":137345,"journal":{"name":"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123922415","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：