Sebastian Jenderny, Daniel Reiser, Karlheinz Ochs, Marc Reichenbach
The transition from idealized memristor models to physical implementations, such as resistive random access memory (RRAM) devices, is pivotal for advancing neuromorphic circuits in hardware. However, real-world RRAM devices face challenges due to inherent variability and fabrication tolerances, which hinder their adoption. This study presents the variability intensity model (VIM), a statistical framework designed to assess variability in RRAM devices. The VIM is employed to evaluate the resilience of a memristor-based Hindmarsh–Rose circuit, which models neuronal behavior in biological systems. The results indicate that the circuit exhibits heightened sensitivity to variability in high-conductance states, while demonstrating increased tolerance in low-conductance states. This observation is consistent with RRAM characteristics, where conductance variability decreases as conductance increases. Furthermore, robust spiking dynamics are observed, though the bursting behavior remains sensitive, leading to critical parameter constraints for RRAM devices. By employing a variability model based on real-world measurements, this work establishes a crucial foundation for the implementation of memristor-based Hindmarsh–Rose circuits in hardware, where variability is a paramount consideration.
{"title":"Towards a Memristor-Based Circuit Implementation of the Hindmarsh–Rose Model","authors":"Sebastian Jenderny, Daniel Reiser, Karlheinz Ochs, Marc Reichenbach","doi":"10.1002/cta.70126","DOIUrl":"https://doi.org/10.1002/cta.70126","url":null,"abstract":"<p>The transition from idealized memristor models to physical implementations, such as resistive random access memory (RRAM) devices, is pivotal for advancing neuromorphic circuits in hardware. However, real-world RRAM devices face challenges due to inherent variability and fabrication tolerances, which hinder their adoption. This study presents the variability intensity model (VIM), a statistical framework designed to assess variability in RRAM devices. The VIM is employed to evaluate the resilience of a memristor-based Hindmarsh–Rose circuit, which models neuronal behavior in biological systems. The results indicate that the circuit exhibits heightened sensitivity to variability in high-conductance states, while demonstrating increased tolerance in low-conductance states. This observation is consistent with RRAM characteristics, where conductance variability decreases as conductance increases. Furthermore, robust spiking dynamics are observed, though the bursting behavior remains sensitive, leading to critical parameter constraints for RRAM devices. By employing a variability model based on real-world measurements, this work establishes a crucial foundation for the implementation of memristor-based Hindmarsh–Rose circuits in hardware, where variability is a paramount consideration.</p>","PeriodicalId":13874,"journal":{"name":"International Journal of Circuit Theory and Applications","volume":"53 11","pages":"6712-6720"},"PeriodicalIF":1.6,"publicationDate":"2025-09-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/cta.70126","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145436422","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Julia Nako, Georgia Tsirimokou, Costas Psychalinos, Ahmed S. Elwakil
This work presents novel designs of multifunction topologies for simultaneously extracting the real and imaginary components of complex band-pass and notch filters, which are derived from prototype first-order low-pass and high-pass filters. The real and imaginary parts of the complex filters are then post-processed to compute the instantaneous magnitude. The performance of both the multifunction topologies and post-processing stages is evaluated using the OrCAD PSpice suite, as well as through experimental results.
{"title":"On the Design of Complex Coefficient Multifunction Filters","authors":"Julia Nako, Georgia Tsirimokou, Costas Psychalinos, Ahmed S. Elwakil","doi":"10.1002/cta.70079","DOIUrl":"https://doi.org/10.1002/cta.70079","url":null,"abstract":"<p>This work presents novel designs of multifunction topologies for simultaneously extracting the real and imaginary components of complex band-pass and notch filters, which are derived from prototype first-order low-pass and high-pass filters. The real and imaginary parts of the complex filters are then post-processed to compute the instantaneous magnitude. The performance of both the multifunction topologies and post-processing stages is evaluated using the OrCAD PSpice suite, as well as through experimental results.</p>","PeriodicalId":13874,"journal":{"name":"International Journal of Circuit Theory and Applications","volume":"54 1","pages":"591-600"},"PeriodicalIF":1.6,"publicationDate":"2025-08-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/cta.70079","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145915826","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}