Pub Date : 1990-04-23DOI: 10.1109/ICIPRM.1990.202982
S. Bachowski, D. Bliss, B. Ahern, R. M. Hilton, J. Adamski, D. Carlson
A comparison is made between the magnetic liquid-encapsulated-Kyropoulos (MLEK) method and the magnetic liquid-encapsulated-Czochralski (MLEC) method for bulk growth of InP. The application of a magnetic field was observed to alter the interface shape and doping distribution in both LEK and LEC. For MLEC with the proper magnetic field strength, dopant striations can be reduced. In contrast, for MLEK with corotation, striations remained unchanged when a magnetic field was applied. However, for MLEK growth down with no rotation a uniform local dopant distribution with no growth striations is apparent. It is confirmed that MLEK growth in a low-gradient environment yields low-dislocation-density crystals.<>
{"title":"Magnetically stabilized Kyropoulos and Czochralski growth of InP","authors":"S. Bachowski, D. Bliss, B. Ahern, R. M. Hilton, J. Adamski, D. Carlson","doi":"10.1109/ICIPRM.1990.202982","DOIUrl":"https://doi.org/10.1109/ICIPRM.1990.202982","url":null,"abstract":"A comparison is made between the magnetic liquid-encapsulated-Kyropoulos (MLEK) method and the magnetic liquid-encapsulated-Czochralski (MLEC) method for bulk growth of InP. The application of a magnetic field was observed to alter the interface shape and doping distribution in both LEK and LEC. For MLEC with the proper magnetic field strength, dopant striations can be reduced. In contrast, for MLEK with corotation, striations remained unchanged when a magnetic field was applied. However, for MLEK growth down with no rotation a uniform local dopant distribution with no growth striations is apparent. It is confirmed that MLEK growth in a low-gradient environment yields low-dislocation-density crystals.<<ETX>>","PeriodicalId":138960,"journal":{"name":"International Conference on Indium Phosphide and Related Materials","volume":"77 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127289690","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1990-04-23DOI: 10.1109/ICIPRM.1990.202999
K. Carey
Summary form only given. An overview of the techniques important for organometallic vapor-phase epitaxy (OMVPE) of InP and related materials was presented. Switching schemes to obtain abrupt interfaces that avoid film decomposition and formation of the intermediate compound InAs and minimize formation of other intermediate compounds such as InAsP were considered. Atmospheric and low-pressure growth of InP compounds were contrasted for the growth of InP-based materials. Techniques that are important for optoelectronic integrated circuits (OEICs) and photonic integrated circuits (PICs) such as epitaxial regrowth and selective area growth were also discussed.<>
{"title":"OMVPE of InP-based structures for photonic devices","authors":"K. Carey","doi":"10.1109/ICIPRM.1990.202999","DOIUrl":"https://doi.org/10.1109/ICIPRM.1990.202999","url":null,"abstract":"Summary form only given. An overview of the techniques important for organometallic vapor-phase epitaxy (OMVPE) of InP and related materials was presented. Switching schemes to obtain abrupt interfaces that avoid film decomposition and formation of the intermediate compound InAs and minimize formation of other intermediate compounds such as InAsP were considered. Atmospheric and low-pressure growth of InP compounds were contrasted for the growth of InP-based materials. Techniques that are important for optoelectronic integrated circuits (OEICs) and photonic integrated circuits (PICs) such as epitaxial regrowth and selective area growth were also discussed.<<ETX>>","PeriodicalId":138960,"journal":{"name":"International Conference on Indium Phosphide and Related Materials","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125275538","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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