Pub Date : 1990-04-23DOI: 10.1109/ICIPRM.1990.203040
O. Sri, R. E. Owens, C. Wilmsen, S. Goodnick, J. Lary
Results of a Monte Carlo simulation of inversion layer transport in InP devices at both high and low fields are presented. They show that the low-field mobility and the peak electron velocity decrease with increasing surface roughness and interface charge. However, at high fields the average electron velocity for the different surfaces converge and become nearly independent of the surface condition. This suggests that as the MOSFET is scaled down, the device performance will become independent of interface quality. Velocity-field, transit-time-channel-length, and transit-time-surface-roughness curves for InP MIS structures are presented. From these, qualitative estimates of device performance are obtained in terms of the surface roughness.<>
{"title":"The effect of surface roughness on the performance of InP MOSFETs","authors":"O. Sri, R. E. Owens, C. Wilmsen, S. Goodnick, J. Lary","doi":"10.1109/ICIPRM.1990.203040","DOIUrl":"https://doi.org/10.1109/ICIPRM.1990.203040","url":null,"abstract":"Results of a Monte Carlo simulation of inversion layer transport in InP devices at both high and low fields are presented. They show that the low-field mobility and the peak electron velocity decrease with increasing surface roughness and interface charge. However, at high fields the average electron velocity for the different surfaces converge and become nearly independent of the surface condition. This suggests that as the MOSFET is scaled down, the device performance will become independent of interface quality. Velocity-field, transit-time-channel-length, and transit-time-surface-roughness curves for InP MIS structures are presented. From these, qualitative estimates of device performance are obtained in terms of the surface roughness.<<ETX>>","PeriodicalId":138960,"journal":{"name":"International Conference on Indium Phosphide and Related Materials","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122206860","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1990-04-23DOI: 10.1109/ICIPRM.1990.203046
Y. Jeong, J. Lee, Y. Hong, Y. Bae
Low-temperature (100-200 degrees C) growth of phosphorus nitride (P/sub 3/N/sub 5/) on an InP surface has been achieved using a mixture of PCl/sub 3/ and NH/sub 3/ gases by a direct photo-CVD. The films have a resistivity of 1*10/sup 14/ Omega -cm and a breakdown voltage of 1*10/sup 7/ V/cm. The minimum density of interface trap states for the Al-P/sub 3/N/sub 5/-InP MIS structure after the in-situ pretreatment and postanneal is about 3.6*10/sup 10/ cm/sup -2/ eV/sup -1/ near the midgap of the InP. Depth profiles determined from X-ray photoelectron and Auger spectroscopy data at deposition temperatures of 200 degrees C and 150 degrees C, respectively, show that the O atoms pile up at the P/sub 3/N/sub 5//InP interface and diffuse toward the P/sub 3/N/sub 5/ film. The data are used to evaluate the film and the interface.<>
{"title":"InP MIS structure with phosphorus-nitride film grown by photo-CVD","authors":"Y. Jeong, J. Lee, Y. Hong, Y. Bae","doi":"10.1109/ICIPRM.1990.203046","DOIUrl":"https://doi.org/10.1109/ICIPRM.1990.203046","url":null,"abstract":"Low-temperature (100-200 degrees C) growth of phosphorus nitride (P/sub 3/N/sub 5/) on an InP surface has been achieved using a mixture of PCl/sub 3/ and NH/sub 3/ gases by a direct photo-CVD. The films have a resistivity of 1*10/sup 14/ Omega -cm and a breakdown voltage of 1*10/sup 7/ V/cm. The minimum density of interface trap states for the Al-P/sub 3/N/sub 5/-InP MIS structure after the in-situ pretreatment and postanneal is about 3.6*10/sup 10/ cm/sup -2/ eV/sup -1/ near the midgap of the InP. Depth profiles determined from X-ray photoelectron and Auger spectroscopy data at deposition temperatures of 200 degrees C and 150 degrees C, respectively, show that the O atoms pile up at the P/sub 3/N/sub 5//InP interface and diffuse toward the P/sub 3/N/sub 5/ film. The data are used to evaluate the film and the interface.<<ETX>>","PeriodicalId":138960,"journal":{"name":"International Conference on Indium Phosphide and Related Materials","volume":"76 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127446059","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1990-04-23DOI: 10.1109/ICIPRM.1990.202983
K. Kohiro, K. Kainosho, H. Shimakura, T. Fukui, O. Oda
Large-diameter InP Single crystals (60 mm and 3 in) have been grown by a phosphorus-vapor-controlled liquid-encapsulated-Czochralski (PC-LEC) method in which the pulling rod is not sealed by an encapsulant but by a mechanical seal. The advantage of this technology is that the crystal growth can be performed in an industrial setting because of the ease of instrumentation. Both S-doped and Fe-doped single crystals have been grown. In the case of S-doped crystals, the dislocation free area was greatly increased compared with the conventional LEC method. A 3-in Fe-doped InP crystal with a dislocation density lower than 5*10/sup 4/ cm/sup -2/ was also grown.<>
{"title":"Growth of large diameter InP single crystals by the phosphorus vapor controlled LEC method","authors":"K. Kohiro, K. Kainosho, H. Shimakura, T. Fukui, O. Oda","doi":"10.1109/ICIPRM.1990.202983","DOIUrl":"https://doi.org/10.1109/ICIPRM.1990.202983","url":null,"abstract":"Large-diameter InP Single crystals (60 mm and 3 in) have been grown by a phosphorus-vapor-controlled liquid-encapsulated-Czochralski (PC-LEC) method in which the pulling rod is not sealed by an encapsulant but by a mechanical seal. The advantage of this technology is that the crystal growth can be performed in an industrial setting because of the ease of instrumentation. Both S-doped and Fe-doped single crystals have been grown. In the case of S-doped crystals, the dislocation free area was greatly increased compared with the conventional LEC method. A 3-in Fe-doped InP crystal with a dislocation density lower than 5*10/sup 4/ cm/sup -2/ was also grown.<<ETX>>","PeriodicalId":138960,"journal":{"name":"International Conference on Indium Phosphide and Related Materials","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130193096","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1990-04-23DOI: 10.1109/ICIPRM.1990.203022
C. Sundararaman, A. Mouton, J. Currie
The chemical etching of InP by iodic acid (HIO/sub 3/) solutions of varying weight percentage has been characterized in detail. The concentration dependence of etch rate of activation energies, and of etch profile has been evaluated. Solutions below 20 wt.% concentration are reaction-rate limited and are found to be useful for InP processing. The chemical state of the surface has been studied by X-ray photoelectron spectroscopy (XPS). These solutions oxidize the surface resulting in the formation of InPO/sub 4/:xH/sub 2/O, which could be useful for Schottky and MIS device applications. The use of a 20 wt.% solution for mesa type etching applications and a 5-10 wt.% solution for cleaning purposes is suggested.<>
{"title":"Chemical etching of InP","authors":"C. Sundararaman, A. Mouton, J. Currie","doi":"10.1109/ICIPRM.1990.203022","DOIUrl":"https://doi.org/10.1109/ICIPRM.1990.203022","url":null,"abstract":"The chemical etching of InP by iodic acid (HIO/sub 3/) solutions of varying weight percentage has been characterized in detail. The concentration dependence of etch rate of activation energies, and of etch profile has been evaluated. Solutions below 20 wt.% concentration are reaction-rate limited and are found to be useful for InP processing. The chemical state of the surface has been studied by X-ray photoelectron spectroscopy (XPS). These solutions oxidize the surface resulting in the formation of InPO/sub 4/:xH/sub 2/O, which could be useful for Schottky and MIS device applications. The use of a 20 wt.% solution for mesa type etching applications and a 5-10 wt.% solution for cleaning purposes is suggested.<<ETX>>","PeriodicalId":138960,"journal":{"name":"International Conference on Indium Phosphide and Related Materials","volume":"62 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130986401","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1990-04-23DOI: 10.1109/ICIPRM.1990.203029
S. Krawczyk, K. Schohe, C. Klingelhofer, B. Vilotitch, C. Lenoble, M. Villard, X. Hugon, D. Regaud, F. Ducroquet
Scanning photoluminescence (SPL) measurements were used to characterize lattice-mismatched InGaAs/InP heterostructures and to study the correlation between the results of the SPL measurements and the electrical characteristics of the completed p-i-n photodiodes made with this material. Mismatch dislocations, isolated dislocations, and short- and long-range nonuniformities were revealed. Correlations between the results obtained by SPL and the reverse current of the fabricated photodiodes were observed. The defect creation in the epitaxial layers is extremely sensitive to small variations of the process conditions.<>
{"title":"Evaluation of lattice mismatched InGaAs layers and photodiode arrays by scanning photoluminescence","authors":"S. Krawczyk, K. Schohe, C. Klingelhofer, B. Vilotitch, C. Lenoble, M. Villard, X. Hugon, D. Regaud, F. Ducroquet","doi":"10.1109/ICIPRM.1990.203029","DOIUrl":"https://doi.org/10.1109/ICIPRM.1990.203029","url":null,"abstract":"Scanning photoluminescence (SPL) measurements were used to characterize lattice-mismatched InGaAs/InP heterostructures and to study the correlation between the results of the SPL measurements and the electrical characteristics of the completed p-i-n photodiodes made with this material. Mismatch dislocations, isolated dislocations, and short- and long-range nonuniformities were revealed. Correlations between the results obtained by SPL and the reverse current of the fabricated photodiodes were observed. The defect creation in the epitaxial layers is extremely sensitive to small variations of the process conditions.<<ETX>>","PeriodicalId":138960,"journal":{"name":"International Conference on Indium Phosphide and Related Materials","volume":"169 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124728473","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1990-04-23DOI: 10.1109/ICIPRM.1990.203008
T. Tanbun-ek, R. Logan, N. Olsson, H. Temkin, A. Sergent, K. Wecht
Strained-layer quantum-well InGaAsP/InP lasers emitting at wavelengths between 1.47 and 1.55 mu m are reported. The lasing wavelength could be adjusted by introducing either tensile or compressive strain as well as by changing the layer thickness of the quantum wells. To obtain a lasing wavelength as short as 1.47 mu m, tensile strain is preferable due to the relaxed constraints in layer thickness of the quantum wells. Both tensile and compressive strain were found to improve the performance of the lasers as compared to the lattice-matched ones. A sample with compressive strain showed a CW threshold current as low as 4 mA. Maximum CW output power as high as 206 mW with a lasing wavelength of 1.47 mu m was obtained from a quantum-well active layer with tensile strain.<>
{"title":"High performance long wavelength strained layer InGaAs/InP quantum well lasers","authors":"T. Tanbun-ek, R. Logan, N. Olsson, H. Temkin, A. Sergent, K. Wecht","doi":"10.1109/ICIPRM.1990.203008","DOIUrl":"https://doi.org/10.1109/ICIPRM.1990.203008","url":null,"abstract":"Strained-layer quantum-well InGaAsP/InP lasers emitting at wavelengths between 1.47 and 1.55 mu m are reported. The lasing wavelength could be adjusted by introducing either tensile or compressive strain as well as by changing the layer thickness of the quantum wells. To obtain a lasing wavelength as short as 1.47 mu m, tensile strain is preferable due to the relaxed constraints in layer thickness of the quantum wells. Both tensile and compressive strain were found to improve the performance of the lasers as compared to the lattice-matched ones. A sample with compressive strain showed a CW threshold current as low as 4 mA. Maximum CW output power as high as 206 mW with a lasing wavelength of 1.47 mu m was obtained from a quantum-well active layer with tensile strain.<<ETX>>","PeriodicalId":138960,"journal":{"name":"International Conference on Indium Phosphide and Related Materials","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126419728","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1990-04-23DOI: 10.1109/ICIPRM.1990.202995
Y. Miura, K. Takemoto, T. Iwasaki, N. Yamabayashi, M. Kaji, S. Murai, K. Tada, S. Akai
An epitaxial InP/InGaAs/InP structure was grown on 2-in-diameter InP substrates by the chloride vapor-phase epitaxy (VPE) method. The undoped carrier concentration of both the InP and InGaAs layers was less than 1*10/sup 15/ cm/sup -3/. Hall mobility at 77 K was 85000 cm/sup 2//V-s. The variation of epi-layer thickness, carrier concentration and lattice mismatch across the wafer was less than 2%, 4% and 0.8%, respectively. The reproducibility of growth rate, carrier concentration, and lattice mismatch from run to run was less than 5%.<>
{"title":"VPE growth of high purity and high uniformity InGaAs/InP epitaxial layers on 2-inch diameter InP substrate","authors":"Y. Miura, K. Takemoto, T. Iwasaki, N. Yamabayashi, M. Kaji, S. Murai, K. Tada, S. Akai","doi":"10.1109/ICIPRM.1990.202995","DOIUrl":"https://doi.org/10.1109/ICIPRM.1990.202995","url":null,"abstract":"An epitaxial InP/InGaAs/InP structure was grown on 2-in-diameter InP substrates by the chloride vapor-phase epitaxy (VPE) method. The undoped carrier concentration of both the InP and InGaAs layers was less than 1*10/sup 15/ cm/sup -3/. Hall mobility at 77 K was 85000 cm/sup 2//V-s. The variation of epi-layer thickness, carrier concentration and lattice mismatch across the wafer was less than 2%, 4% and 0.8%, respectively. The reproducibility of growth rate, carrier concentration, and lattice mismatch from run to run was less than 5%.<<ETX>>","PeriodicalId":138960,"journal":{"name":"International Conference on Indium Phosphide and Related Materials","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130455565","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1990-04-23DOI: 10.1109/ICIPRM.1990.203005
T. Uchida, T. Uchida, K. Mise, N. Yokouchi, F. Koyama, K. Iga
High growth rates have been obtained for Ga/sub 0.47/In/sub 0.53/As and InP using chemical beam epitaxy. The GaInAs growth rate was controlled over the range from 1.2 to 6 mu m/h, the latter being the highest growth rate obtained without sacrificing the optical and electrical properties of the crystal. Good thickness controllability was demonstrated by growing multi-quantum-wells at growth rates of 5.15 and 2.5 mu m/h. An emission wavelength shift from 1.56 mu m to 1.1 mu m was observed in room temperature photoluminescence measurements. Based on X-ray spectra satellite peaks, well widths associated with these wavelength ranged from 80 AA to 10 AA. The results agree with theoretical calculations and show good thickness controllability and wavelength tunability at high growth rates.<>
{"title":"High rate growth of Ga/sub 0.47/In/sub 0.53/As/InP by chemical beam epitaxy","authors":"T. Uchida, T. Uchida, K. Mise, N. Yokouchi, F. Koyama, K. Iga","doi":"10.1109/ICIPRM.1990.203005","DOIUrl":"https://doi.org/10.1109/ICIPRM.1990.203005","url":null,"abstract":"High growth rates have been obtained for Ga/sub 0.47/In/sub 0.53/As and InP using chemical beam epitaxy. The GaInAs growth rate was controlled over the range from 1.2 to 6 mu m/h, the latter being the highest growth rate obtained without sacrificing the optical and electrical properties of the crystal. Good thickness controllability was demonstrated by growing multi-quantum-wells at growth rates of 5.15 and 2.5 mu m/h. An emission wavelength shift from 1.56 mu m to 1.1 mu m was observed in room temperature photoluminescence measurements. Based on X-ray spectra satellite peaks, well widths associated with these wavelength ranged from 80 AA to 10 AA. The results agree with theoretical calculations and show good thickness controllability and wavelength tunability at high growth rates.<<ETX>>","PeriodicalId":138960,"journal":{"name":"International Conference on Indium Phosphide and Related Materials","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134574127","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1990-04-23DOI: 10.1109/ICIPRM.1990.203054
D. Lishan, E. Hu
An attempt is made to add insight into the expectation that in the dry etching of InP, increased temperatures should assist etching even in ion enhanced systems, both in regard to rate and profile. Results for InP and GaAs are compared with each other and results in the literature. At >150 degrees C, the InP etch rate is approximately twice as fast with the plasma on as with the plasma off. The rapid etch rate in molecular Cl/sub 2/ alone, i.e. with the plasma off, confirms that plasma generated radicals are not necessary for etching to occur. This is also observed for GaAs etching in Cl/sub 2/. Thus, molecular Cl/sub 2/ can crack on the surface to form the etch products. At lower temperatures the etch rate enhancement with the plasma on is not as apparent, and a much larger scatter in the data is observed.<>
{"title":"Remote plasma etching of InP in Cl2 and HCl","authors":"D. Lishan, E. Hu","doi":"10.1109/ICIPRM.1990.203054","DOIUrl":"https://doi.org/10.1109/ICIPRM.1990.203054","url":null,"abstract":"An attempt is made to add insight into the expectation that in the dry etching of InP, increased temperatures should assist etching even in ion enhanced systems, both in regard to rate and profile. Results for InP and GaAs are compared with each other and results in the literature. At >150 degrees C, the InP etch rate is approximately twice as fast with the plasma on as with the plasma off. The rapid etch rate in molecular Cl/sub 2/ alone, i.e. with the plasma off, confirms that plasma generated radicals are not necessary for etching to occur. This is also observed for GaAs etching in Cl/sub 2/. Thus, molecular Cl/sub 2/ can crack on the surface to form the etch products. At lower temperatures the etch rate enhancement with the plasma on is not as apparent, and a much larger scatter in the data is observed.<<ETX>>","PeriodicalId":138960,"journal":{"name":"International Conference on Indium Phosphide and Related Materials","volume":"53 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132305006","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1990-04-23DOI: 10.1109/ICIPRM.1990.202997
G. Strauch, D. Schmitz, H. Jurgensen, M. Heyen
Further improvement of thickness and compositional homogeneity was sought in order to increase the usable wafer area for sophisticated device production and thus reduce the manufacturing costs in low-pressure metalorganic vapor-phase epitaxy processes. The gas-foil concept for wafer rotation was used to achieve these goals. In this technique the substrate is placed on a graphite carrier floating on a gas foil (high-purity H/sub 2/). The same gas flow also forces the carrier to rotate. The thickness uniformities of InP, GaInAs and GaInAsP layers grown with the gas-foil rotation susceptor in a single-wafer reactor were better than +or-1.5%. The variation of lattice mismatch of ternary and quaternary layers was below 2.5*10/sup -4/. The GaInAsP wavelength variation was smaller than 4 nm over the entire wafer area (a rim of 5 mm excluded).<>
{"title":"Improvement of large area homogeneity of InP based III-V layers by using the gas foil rotation concept","authors":"G. Strauch, D. Schmitz, H. Jurgensen, M. Heyen","doi":"10.1109/ICIPRM.1990.202997","DOIUrl":"https://doi.org/10.1109/ICIPRM.1990.202997","url":null,"abstract":"Further improvement of thickness and compositional homogeneity was sought in order to increase the usable wafer area for sophisticated device production and thus reduce the manufacturing costs in low-pressure metalorganic vapor-phase epitaxy processes. The gas-foil concept for wafer rotation was used to achieve these goals. In this technique the substrate is placed on a graphite carrier floating on a gas foil (high-purity H/sub 2/). The same gas flow also forces the carrier to rotate. The thickness uniformities of InP, GaInAs and GaInAsP layers grown with the gas-foil rotation susceptor in a single-wafer reactor were better than +or-1.5%. The variation of lattice mismatch of ternary and quaternary layers was below 2.5*10/sup -4/. The GaInAsP wavelength variation was smaller than 4 nm over the entire wafer area (a rim of 5 mm excluded).<<ETX>>","PeriodicalId":138960,"journal":{"name":"International Conference on Indium Phosphide and Related Materials","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131672316","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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