Pub Date : 1990-04-23DOI: 10.1109/ICIPRM.1990.203047
P. Morton, A. Mar, J. Bowers, L. Koszi, M. Soler, J. Lopata, D. Wilt
Some published results on mode locked monolithic lasers are reviewed. Optical spectra of a typical hybrid mode-locked monolithic device for different levels of RF power and frequency are shown and discussed, as are effects of detuning the modulation frequency. Design considerations are examined. These include the length of the device, the use of hybrid mode locking, and the choice of active or passive waveguides.<>
{"title":"Monolithic mode locked GaInAsP lasers","authors":"P. Morton, A. Mar, J. Bowers, L. Koszi, M. Soler, J. Lopata, D. Wilt","doi":"10.1109/ICIPRM.1990.203047","DOIUrl":"https://doi.org/10.1109/ICIPRM.1990.203047","url":null,"abstract":"Some published results on mode locked monolithic lasers are reviewed. Optical spectra of a typical hybrid mode-locked monolithic device for different levels of RF power and frequency are shown and discussed, as are effects of detuning the modulation frequency. Design considerations are examined. These include the length of the device, the use of hybrid mode locking, and the choice of active or passive waveguides.<<ETX>>","PeriodicalId":138960,"journal":{"name":"International Conference on Indium Phosphide and Related Materials","volume":"135 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122945661","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1990-04-23DOI: 10.1109/ICIPRM.1990.203035
H. Fardi, D. Suda, R. E. Hayes
A one-dimensional semiconductor device simulation program with current boundary conditions has been developed and applied to optical heterostructure p-n-p-n optical switches. Both avalanche effect and bandgap discontinuities are included in the model. Numerical simulation is performed to aid in design and to determine the switching parameters. The effects of light generation and carrier lifetime on current-voltage characteristics of the switches are investigated. The modeling results are studied for both InP/InGaAs and AlGaAs/GaAs devices and compared with experimental results in the latter case. Simulation and experiment agree on holding current and voltage and on high-current on-state characteristics. The limitations and simplification of the numerical model lead to a discrepancy in the low-current off-state.<>
{"title":"Numerical modeling of pnpn heterostructure switches","authors":"H. Fardi, D. Suda, R. E. Hayes","doi":"10.1109/ICIPRM.1990.203035","DOIUrl":"https://doi.org/10.1109/ICIPRM.1990.203035","url":null,"abstract":"A one-dimensional semiconductor device simulation program with current boundary conditions has been developed and applied to optical heterostructure p-n-p-n optical switches. Both avalanche effect and bandgap discontinuities are included in the model. Numerical simulation is performed to aid in design and to determine the switching parameters. The effects of light generation and carrier lifetime on current-voltage characteristics of the switches are investigated. The modeling results are studied for both InP/InGaAs and AlGaAs/GaAs devices and compared with experimental results in the latter case. Simulation and experiment agree on holding current and voltage and on high-current on-state characteristics. The limitations and simplification of the numerical model lead to a discrepancy in the low-current off-state.<<ETX>>","PeriodicalId":138960,"journal":{"name":"International Conference on Indium Phosphide and Related Materials","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121200300","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1990-04-23DOI: 10.1109/ICIPRM.1990.203013
Y. Kotaki, H. Ishikawa
Results obtained for an experimental three-section multiple-quantum-well distributed-feedback (DFB) laser with a long cavity and a lambda /4 phase-shifted grating are reviewed. To narrow the linewidth, a 1.2-mm-long cavity, Bragg wavelength detuning of -20 nm from gain peak, and a quantum-well active layer were used. Wavelength tuning was achieved by controlling spatial hole burning using three electrodes with nonuniform current injection. The maximum wavelength tuning range was 1.6 nm, the minimum linewidth was 350 kHz, and FM response was flat from 100 kHz to 10 GHz, making the laser suitable for use in coherent optical fiber transmission systems.<>
{"title":"Narrow linewidth and wavelength tunable distributed feedback lasers","authors":"Y. Kotaki, H. Ishikawa","doi":"10.1109/ICIPRM.1990.203013","DOIUrl":"https://doi.org/10.1109/ICIPRM.1990.203013","url":null,"abstract":"Results obtained for an experimental three-section multiple-quantum-well distributed-feedback (DFB) laser with a long cavity and a lambda /4 phase-shifted grating are reviewed. To narrow the linewidth, a 1.2-mm-long cavity, Bragg wavelength detuning of -20 nm from gain peak, and a quantum-well active layer were used. Wavelength tuning was achieved by controlling spatial hole burning using three electrodes with nonuniform current injection. The maximum wavelength tuning range was 1.6 nm, the minimum linewidth was 350 kHz, and FM response was flat from 100 kHz to 10 GHz, making the laser suitable for use in coherent optical fiber transmission systems.<<ETX>>","PeriodicalId":138960,"journal":{"name":"International Conference on Indium Phosphide and Related Materials","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125920994","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1990-04-23DOI: 10.1109/ICIPRM.1990.203030
D. Grutzmacher, J. Hergeth, M. Glade, K. Wolter, F. Reinhardt, F. Fidorra, P. Wolfram, P. Balk
Using a low-pressure MOVPE growth process for GaInAs/InP and GaInAs/GaInAsP multiple-quantum-well (MQW) lasers, stringent requirements for interface abruptness and the diffusion of the p-type dopant, among others, were met. In the optimized growth process the well width is controlled in fractions of one monolayer and the diffusion coefficient of Zn is reduced to 6.5*10/sup -14/ cm/sup 2//s. Failure to improve the laser characteristics by replacing the GaInAsP active layer by a GaInAs/InP MQW is caused by inefficient heavy hole injection across the InP barriers. For lasers containing four GaInAs wells, threshold current density as low as 0.61 kA/cm/sup 2/ (L=800 mu m) was observed.<>
{"title":"Controlled growth of GaInAs/InP MQW and GaInAsP/GaInAs separate confinement MQW laser structures by LP-MOVPE","authors":"D. Grutzmacher, J. Hergeth, M. Glade, K. Wolter, F. Reinhardt, F. Fidorra, P. Wolfram, P. Balk","doi":"10.1109/ICIPRM.1990.203030","DOIUrl":"https://doi.org/10.1109/ICIPRM.1990.203030","url":null,"abstract":"Using a low-pressure MOVPE growth process for GaInAs/InP and GaInAs/GaInAsP multiple-quantum-well (MQW) lasers, stringent requirements for interface abruptness and the diffusion of the p-type dopant, among others, were met. In the optimized growth process the well width is controlled in fractions of one monolayer and the diffusion coefficient of Zn is reduced to 6.5*10/sup -14/ cm/sup 2//s. Failure to improve the laser characteristics by replacing the GaInAsP active layer by a GaInAs/InP MQW is caused by inefficient heavy hole injection across the InP barriers. For lasers containing four GaInAs wells, threshold current density as low as 0.61 kA/cm/sup 2/ (L=800 mu m) was observed.<<ETX>>","PeriodicalId":138960,"journal":{"name":"International Conference on Indium Phosphide and Related Materials","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130008037","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1990-04-23DOI: 10.1109/ICIPRM.1990.202998
W. Chen, S.L. Yang, P.-L. Liu
Low-temperature epitaxial growth of InP was achieved at a temperature as low as 330 degrees C using flow-rate modulation epitaxy (FME) with a thermal precracking technique. The growth systems was a modified metalorganic chemical vapor deposition (MOCVD) system. The growth rate decreased as the growth temperature was reduced. No clear transition temperature for mass-transport-limited and kinetic-limited regimes was observed, indicating that the highly reactive alkyl used greatly enhanced the surface reaction. The growth rate was probably limited by the supply of active reactants. Compared to the nominal FME growth process, the electron mobility was improved by a factor of two for InP homolayers grown at lower growth temperatures, i.e. from 330 degrees C to 450 degrees C. It was improved nearly sixfold in the case of InP/GaAs heteroepitaxial layers.<>
{"title":"Low temperature epitaxial growth of indium phosphide","authors":"W. Chen, S.L. Yang, P.-L. Liu","doi":"10.1109/ICIPRM.1990.202998","DOIUrl":"https://doi.org/10.1109/ICIPRM.1990.202998","url":null,"abstract":"Low-temperature epitaxial growth of InP was achieved at a temperature as low as 330 degrees C using flow-rate modulation epitaxy (FME) with a thermal precracking technique. The growth systems was a modified metalorganic chemical vapor deposition (MOCVD) system. The growth rate decreased as the growth temperature was reduced. No clear transition temperature for mass-transport-limited and kinetic-limited regimes was observed, indicating that the highly reactive alkyl used greatly enhanced the surface reaction. The growth rate was probably limited by the supply of active reactants. Compared to the nominal FME growth process, the electron mobility was improved by a factor of two for InP homolayers grown at lower growth temperatures, i.e. from 330 degrees C to 450 degrees C. It was improved nearly sixfold in the case of InP/GaAs heteroepitaxial layers.<<ETX>>","PeriodicalId":138960,"journal":{"name":"International Conference on Indium Phosphide and Related Materials","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133994246","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1990-04-23DOI: 10.1109/ICIPRM.1990.203051
K. C. Hwang, S.S. Li, Y. Kao
A high-speed, broadband InAlAs/InGaAs graded superlattice Schottky barrier photodiode with useful spectral response extending from 0.4 to 1.6 mu m is demonstrated. The top, wide-bandgap n-In/sub 0.52/Al/sub 0.48/As epilayer absorbs photons in the visible to near-infrared, with peak response occurring around 0.8 mu m; the bottom n-In/sub 0.53/Ga/sub 0.47/As epilayer absorbs photons in the 1.0 to 1.6 mu m wavelength regime, with peak response occurring at 1.3 mu m. The photodiode has a responsivity of 0.34 A/W at 0.8 mu m and 0.42 A/W at 1.3 mu m. Excellent dark I-V characteristics with a reverse leakage current of <1.2 nA and junction capacitance of <0.1 pF at -5 V have been achieved.<>
{"title":"A novel high-speed broad wavelength InAlAs/InGaAs Schottky barrier photodiode for 0.4 to 1.6 mu m detection","authors":"K. C. Hwang, S.S. Li, Y. Kao","doi":"10.1109/ICIPRM.1990.203051","DOIUrl":"https://doi.org/10.1109/ICIPRM.1990.203051","url":null,"abstract":"A high-speed, broadband InAlAs/InGaAs graded superlattice Schottky barrier photodiode with useful spectral response extending from 0.4 to 1.6 mu m is demonstrated. The top, wide-bandgap n-In/sub 0.52/Al/sub 0.48/As epilayer absorbs photons in the visible to near-infrared, with peak response occurring around 0.8 mu m; the bottom n-In/sub 0.53/Ga/sub 0.47/As epilayer absorbs photons in the 1.0 to 1.6 mu m wavelength regime, with peak response occurring at 1.3 mu m. The photodiode has a responsivity of 0.34 A/W at 0.8 mu m and 0.42 A/W at 1.3 mu m. Excellent dark I-V characteristics with a reverse leakage current of <1.2 nA and junction capacitance of <0.1 pF at -5 V have been achieved.<<ETX>>","PeriodicalId":138960,"journal":{"name":"International Conference on Indium Phosphide and Related Materials","volume":"153 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131122843","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1990-04-23DOI: 10.1109/ICIPRM.1990.202992
M. Akazawa, E. Ohue, H. Ishii, H. Iwadate, H. Hasegawa
The surface passivation of In/sub 0.53/Ga/sub 0.47/As using an ultrathin Si interface control layer (ICL) and a photo-CVD SiO/sub 2/ overlayer is characterized using X-ray photoelectron spectroscopy (XPS) and the capacitance-voltage measurements in order to determine the optimum structure. It is found that molecular beam epitaxy (MBE) gives more favorable electrical results than low-temperature photo CVD for the growth of an ICL. There exists an optimum thickness of about 10 mA for the MBE Si ICL where N/sub ss/ is significantly reduced. XPS characterization indicates that the ICL of the optimum thickness retains pseudomorphic bond matching to the InGaAs layer during processing still prevent selective oxidation of the InGaAs surface.<>
{"title":"Surface passivation of In/sub 0.53/Ga/sub 0.47/As using thin Si layers by novel in-situ interface control processes","authors":"M. Akazawa, E. Ohue, H. Ishii, H. Iwadate, H. Hasegawa","doi":"10.1109/ICIPRM.1990.202992","DOIUrl":"https://doi.org/10.1109/ICIPRM.1990.202992","url":null,"abstract":"The surface passivation of In/sub 0.53/Ga/sub 0.47/As using an ultrathin Si interface control layer (ICL) and a photo-CVD SiO/sub 2/ overlayer is characterized using X-ray photoelectron spectroscopy (XPS) and the capacitance-voltage measurements in order to determine the optimum structure. It is found that molecular beam epitaxy (MBE) gives more favorable electrical results than low-temperature photo CVD for the growth of an ICL. There exists an optimum thickness of about 10 mA for the MBE Si ICL where N/sub ss/ is significantly reduced. XPS characterization indicates that the ICL of the optimum thickness retains pseudomorphic bond matching to the InGaAs layer during processing still prevent selective oxidation of the InGaAs surface.<<ETX>>","PeriodicalId":138960,"journal":{"name":"International Conference on Indium Phosphide and Related Materials","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133852097","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1990-04-23DOI: 10.1109/ICIPRM.1990.203064
S. Loualiche, A. Ginudi, A. Le Corre, D. Lecrosnier, C. Vaudry, L. Henry, C. Guillemot
A high-gap strained GaInP material has been used to increase Schottky barrier height on InP. This is the first time GaInP has been used for high-electron-mobility transistor (HEMT) fabrication of InP. For these devices the best g/sub m/ for a 1.3- mu m gate HEMT is 300 mS/mm. Transistors of 3- mu m gate length have been studied at low temperature (100 K to 293 K). Their DC electrical characteristics improve upon cooling. The best improvement is obtained at the lowest temperature (+54% for g/sub m/ at 105 K). The structure is stable and does not undergo g/sub m/ or I/sub ds/ collapse at lower temperature, unlike AlGaAs/GaAs heterostructures.<>
{"title":"Low temperature DC characteristics of pseudomorphic Ga/sub 0.18/In/sub 0.82/P/InP/Ga/sub 0.47/In/sub 0.53/As HEMT","authors":"S. Loualiche, A. Ginudi, A. Le Corre, D. Lecrosnier, C. Vaudry, L. Henry, C. Guillemot","doi":"10.1109/ICIPRM.1990.203064","DOIUrl":"https://doi.org/10.1109/ICIPRM.1990.203064","url":null,"abstract":"A high-gap strained GaInP material has been used to increase Schottky barrier height on InP. This is the first time GaInP has been used for high-electron-mobility transistor (HEMT) fabrication of InP. For these devices the best g/sub m/ for a 1.3- mu m gate HEMT is 300 mS/mm. Transistors of 3- mu m gate length have been studied at low temperature (100 K to 293 K). Their DC electrical characteristics improve upon cooling. The best improvement is obtained at the lowest temperature (+54% for g/sub m/ at 105 K). The structure is stable and does not undergo g/sub m/ or I/sub ds/ collapse at lower temperature, unlike AlGaAs/GaAs heterostructures.<<ETX>>","PeriodicalId":138960,"journal":{"name":"International Conference on Indium Phosphide and Related Materials","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134555121","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1990-04-23DOI: 10.1109/ICIPRM.1990.203042
M. Osiński
The abundance of grossly inconsistent estimates for the heavy-hole effective mass in InP, quoted throughout the literature, clearly demonstrates a pressing need for a comprehensive evaluation and for reaching a consensus on this issue. A critical survey of existing theoretical and experimental results is presented, and the most trustworthy data are identified. The valance-band warping parameters are used as a basis of the comparison.<>
{"title":"Heavy-hole effective mass in InP-a critical examination","authors":"M. Osiński","doi":"10.1109/ICIPRM.1990.203042","DOIUrl":"https://doi.org/10.1109/ICIPRM.1990.203042","url":null,"abstract":"The abundance of grossly inconsistent estimates for the heavy-hole effective mass in InP, quoted throughout the literature, clearly demonstrates a pressing need for a comprehensive evaluation and for reaching a consensus on this issue. A critical survey of existing theoretical and experimental results is presented, and the most trustworthy data are identified. The valance-band warping parameters are used as a basis of the comparison.<<ETX>>","PeriodicalId":138960,"journal":{"name":"International Conference on Indium Phosphide and Related Materials","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132772967","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1990-04-23DOI: 10.1109/ICIPRM.1990.203004
S. Durel, J. Caulet, M. Gauneau, B. Lambert, A. Le Corre, A. Poudoulec, D. Lecrosnier
The improvement resulting from the use of a graded buffer layer in the quality of In/sub 0.82/Ga/sub 0.18/As layers grown on an InP substrate is reported. Results of Hall effect measurements and of transmission electron microscopy, X-ray diffraction studies, and photoluminescence studies are described. For a graded buffer layer thicker than 2 mu m, Hall mobility values as high as 20300 cm/sup 2/ V/sup -1/ s/sup -1/ have been measured at room temperature with a dislocation density of about 5*10/sup 6/ cm/sup -2/.<>
{"title":"High quality lattice-mismatched In/sub 0.82/Ga/sub 0.18/As layer grown on InP substrate","authors":"S. Durel, J. Caulet, M. Gauneau, B. Lambert, A. Le Corre, A. Poudoulec, D. Lecrosnier","doi":"10.1109/ICIPRM.1990.203004","DOIUrl":"https://doi.org/10.1109/ICIPRM.1990.203004","url":null,"abstract":"The improvement resulting from the use of a graded buffer layer in the quality of In/sub 0.82/Ga/sub 0.18/As layers grown on an InP substrate is reported. Results of Hall effect measurements and of transmission electron microscopy, X-ray diffraction studies, and photoluminescence studies are described. For a graded buffer layer thicker than 2 mu m, Hall mobility values as high as 20300 cm/sup 2/ V/sup -1/ s/sup -1/ have been measured at room temperature with a dislocation density of about 5*10/sup 6/ cm/sup -2/.<<ETX>>","PeriodicalId":138960,"journal":{"name":"International Conference on Indium Phosphide and Related Materials","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127801170","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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