Pub Date : 1990-04-23DOI: 10.1109/ICIPRM.1990.202985
M. Riaziat, C. Nishimoto, S. Silverman, Y. Pao, S. Weng, M. Glenn, S. Bandy, R. Majidi-Ahy, G. Zdasiuk
InGaAs/InAlAs HEMTS with mushroom profile gates smaller than 0.1 mu m were processed on InP substrate, showing that such devices can be fabricated with high yield using available electron beam technology. The combination of short gate and high 2DEG mobility and saturated velocity in InGaAs/InAlAs HEMTs on InP has led to three terminal devices with unprecedented speed. The actual gate lengths varied between 0.07 and 0.09 mu m. The maximum stable gain measured at 40 GHz varied between 14 and 16 dB with a stability factor k ranging from 0.7 to 0.35, respectively. These devices exhibit current gain cutoff frequencies in excess of 200 GHz and f/sub max/ values above 300 GHz.<>
{"title":"Highest current gain cutoff frequency with 0.08 mu m gate HEMT on InP","authors":"M. Riaziat, C. Nishimoto, S. Silverman, Y. Pao, S. Weng, M. Glenn, S. Bandy, R. Majidi-Ahy, G. Zdasiuk","doi":"10.1109/ICIPRM.1990.202985","DOIUrl":"https://doi.org/10.1109/ICIPRM.1990.202985","url":null,"abstract":"InGaAs/InAlAs HEMTS with mushroom profile gates smaller than 0.1 mu m were processed on InP substrate, showing that such devices can be fabricated with high yield using available electron beam technology. The combination of short gate and high 2DEG mobility and saturated velocity in InGaAs/InAlAs HEMTs on InP has led to three terminal devices with unprecedented speed. The actual gate lengths varied between 0.07 and 0.09 mu m. The maximum stable gain measured at 40 GHz varied between 14 and 16 dB with a stability factor k ranging from 0.7 to 0.35, respectively. These devices exhibit current gain cutoff frequencies in excess of 200 GHz and f/sub max/ values above 300 GHz.<<ETX>>","PeriodicalId":138960,"journal":{"name":"International Conference on Indium Phosphide and Related Materials","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131230270","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1990-04-23DOI: 10.1109/ICIPRM.1990.203002
T. Crumbaker, M. Hafich, G. Y. Robinson, A. Davis, J. P. Lorenzo
The electrical properties of InP single crystal films grown by gas-source MBE on Si
气源MBE在Si上生长InP单晶薄膜的电学性能
{"title":"Heteroepitaxy of InP on Si: variation of electron concentration and mobility with depth","authors":"T. Crumbaker, M. Hafich, G. Y. Robinson, A. Davis, J. P. Lorenzo","doi":"10.1109/ICIPRM.1990.203002","DOIUrl":"https://doi.org/10.1109/ICIPRM.1990.203002","url":null,"abstract":"The electrical properties of InP single crystal films grown by gas-source MBE on Si","PeriodicalId":138960,"journal":{"name":"International Conference on Indium Phosphide and Related Materials","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134212731","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1990-04-23DOI: 10.1109/ICIPRM.1990.203034
M. O'Keefe, R. Miles
Elevated temperatures maintained for long periods during operation, especially in the presence of an electric field due to applied bias, have been found to degrade performance and result in device failure. The failures are attributed to contact constituents migrating into the active region of the Gunn diode. Contact systems involving Au, Ge, Ni, Pt, W, and Ti were investigated for both anode and cathode metallizations. Results showed that both ohmic and current limiting contacts require a stable barrier metallization to separate the contact touching the semiconductor from any overlying metallizations or Au-plated regions. Au migration was identified as a major cause of device failure. A rapidly annealed Pt/Ti barrier metallization was utilized in the fabrication process. This combination showed excellent stability during accelerated temperature testing.<>
{"title":"Stable, reliable contacts to W-band Gunn diodes","authors":"M. O'Keefe, R. Miles","doi":"10.1109/ICIPRM.1990.203034","DOIUrl":"https://doi.org/10.1109/ICIPRM.1990.203034","url":null,"abstract":"Elevated temperatures maintained for long periods during operation, especially in the presence of an electric field due to applied bias, have been found to degrade performance and result in device failure. The failures are attributed to contact constituents migrating into the active region of the Gunn diode. Contact systems involving Au, Ge, Ni, Pt, W, and Ti were investigated for both anode and cathode metallizations. Results showed that both ohmic and current limiting contacts require a stable barrier metallization to separate the contact touching the semiconductor from any overlying metallizations or Au-plated regions. Au migration was identified as a major cause of device failure. A rapidly annealed Pt/Ti barrier metallization was utilized in the fabrication process. This combination showed excellent stability during accelerated temperature testing.<<ETX>>","PeriodicalId":138960,"journal":{"name":"International Conference on Indium Phosphide and Related Materials","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134274104","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1990-04-23DOI: 10.1109/ICIPRM.1990.203043
M. Shokrani, V. Kapoor, M. Biedenbender, L. Messick, R. Nguyen
High-power microwave InP MISFETs were investigated. The gate insulator in the InP MISFET was silicon dioxide (SiO/sub 2/) with a thin (<50 AA) silicon interfacial layer (SIL) deposited by direct plasma-enhanced chemical vapor deposition (PECVD). MIS capacitors were formed on n-type InP using the SiO/sub 2/ and the SiO/sub 2//Si gate insulators. A 1.2 V hysteresis was present in the capacitance-voltage (C-V) curve of the capacitors with SiO/sub 2/, but essentially no hysteresis was observed in the C-V curve of the capacitors with SIL incorporated in the insulator. InP power MISFETs with the SIL exhibited excellent stability with drain current drift of less than 3% in 10/sup 4/ s as compared to 15-18% drift in 10/sup 4/ s for MISFETs without SIL. MISFETs with SIL in the gate insulator had an output power density of 1.75 W/mm at 9.7 GHz with 24% power-added efficiency and an associated power gain of 2.5 dB.<>
{"title":"High microwave power InP MISFETs with one micron and submicron gates","authors":"M. Shokrani, V. Kapoor, M. Biedenbender, L. Messick, R. Nguyen","doi":"10.1109/ICIPRM.1990.203043","DOIUrl":"https://doi.org/10.1109/ICIPRM.1990.203043","url":null,"abstract":"High-power microwave InP MISFETs were investigated. The gate insulator in the InP MISFET was silicon dioxide (SiO/sub 2/) with a thin (<50 AA) silicon interfacial layer (SIL) deposited by direct plasma-enhanced chemical vapor deposition (PECVD). MIS capacitors were formed on n-type InP using the SiO/sub 2/ and the SiO/sub 2//Si gate insulators. A 1.2 V hysteresis was present in the capacitance-voltage (C-V) curve of the capacitors with SiO/sub 2/, but essentially no hysteresis was observed in the C-V curve of the capacitors with SIL incorporated in the insulator. InP power MISFETs with the SIL exhibited excellent stability with drain current drift of less than 3% in 10/sup 4/ s as compared to 15-18% drift in 10/sup 4/ s for MISFETs without SIL. MISFETs with SIL in the gate insulator had an output power density of 1.75 W/mm at 9.7 GHz with 24% power-added efficiency and an associated power gain of 2.5 dB.<<ETX>>","PeriodicalId":138960,"journal":{"name":"International Conference on Indium Phosphide and Related Materials","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133528433","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1990-04-23DOI: 10.1109/ICIPRM.1990.202991
I. Mouatakif, M. Lefebvre, Y. Crosnier, G. Salmer
The strong bulk negative differential resistivity (NDR) exhibited by InP, causing instabilities and limiting performance, is investigated using a 2-D hydrodynamic energy model. A study of drain current instability shows that it occurs more easily in MISFETs than in GaAs MESFETs, and that the maximum usable doping level decreases when the ratio L/sub g//a decreases. This can be related to the fact that in a MISFET the gate control is less effective than in a MESFET, as previously show, and the NDR in InP is more important than in GaAs. For a planar uniformly doped structure, oscillations occur for very low N/sub d/a product and give low current values. For power amplification, a nonuniform doping profile with overdoping between gate and drain contact has been used to obtain stable operation. Such a solution may involve other limitations due to the breakdown mechanism and parasitic capacitances.<>
{"title":"Fundamental limitations of InP MISFET due to Gunn oscillations","authors":"I. Mouatakif, M. Lefebvre, Y. Crosnier, G. Salmer","doi":"10.1109/ICIPRM.1990.202991","DOIUrl":"https://doi.org/10.1109/ICIPRM.1990.202991","url":null,"abstract":"The strong bulk negative differential resistivity (NDR) exhibited by InP, causing instabilities and limiting performance, is investigated using a 2-D hydrodynamic energy model. A study of drain current instability shows that it occurs more easily in MISFETs than in GaAs MESFETs, and that the maximum usable doping level decreases when the ratio L/sub g//a decreases. This can be related to the fact that in a MISFET the gate control is less effective than in a MESFET, as previously show, and the NDR in InP is more important than in GaAs. For a planar uniformly doped structure, oscillations occur for very low N/sub d/a product and give low current values. For power amplification, a nonuniform doping profile with overdoping between gate and drain contact has been used to obtain stable operation. Such a solution may involve other limitations due to the breakdown mechanism and parasitic capacitances.<<ETX>>","PeriodicalId":138960,"journal":{"name":"International Conference on Indium Phosphide and Related Materials","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115156988","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1990-04-23DOI: 10.1109/ICIPRM.1990.203039
P. Fellon, J. De Jaeger, Y. Crosnier
A theoretical study to establish the behavior and the power amplification capabilities of the InP MISFET is described. Two numerical models are used. The first model is a two-dimensional simulation based on Poisson's equation, and the current equation is supposed equal to zero. A second simulation uses a pseudo-two-dimensional model and entails a lighter computational burden. The validity of the results is verified by experimental measurements. Results obtained for the maximum drain current, the breakdown voltage, and the microwave properties show that the InP MISFET is a very interesting alternative for microwave power amplification.<>
{"title":"InP MISFET capabilities for microwave power amplification","authors":"P. Fellon, J. De Jaeger, Y. Crosnier","doi":"10.1109/ICIPRM.1990.203039","DOIUrl":"https://doi.org/10.1109/ICIPRM.1990.203039","url":null,"abstract":"A theoretical study to establish the behavior and the power amplification capabilities of the InP MISFET is described. Two numerical models are used. The first model is a two-dimensional simulation based on Poisson's equation, and the current equation is supposed equal to zero. A second simulation uses a pseudo-two-dimensional model and entails a lighter computational burden. The validity of the results is verified by experimental measurements. Results obtained for the maximum drain current, the breakdown voltage, and the microwave properties show that the InP MISFET is a very interesting alternative for microwave power amplification.<<ETX>>","PeriodicalId":138960,"journal":{"name":"International Conference on Indium Phosphide and Related Materials","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116816960","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1990-04-23DOI: 10.1109/ICIPRM.1990.202980
G. Muller, D. Hofmann, P. Kipfer, F. Mosel
Nominally undoped semi-insulating (SI) InP (p approximately=10/sup 7/ Omega cm) was prepared by annealing of InP wafers in a phosphorus atmosphere. The electronic transport properties are compared to those of Fe-doped (SI) InP crystals grown by the liquid-encapsulated-Czochralski (LEC) technique. The values of the electron mobility of the undoped SI material are considerably higher than those of the Fe-doped and are close to the theoretical values of undoped InP. Depth profiles of the carrier concentration show a strong variation within the first 20 mu m, which can be fitted by the literature data of the diffusion coefficients of P and In, but the bulk SI behavior of the samples cannot be explained by self-diffusion mechanisms. The position of the energy level of the deep acceptor is found to lie 0.67+or-0.02 eV below the edge of the conduction band. Although this value is close to that of Fe/sup 3+/2+/ the results of chemical analysis make it unlikely that Fe is the acceptor.<>
{"title":"The preparation of Fe-doped and nominally undoped semi-insulating InP","authors":"G. Muller, D. Hofmann, P. Kipfer, F. Mosel","doi":"10.1109/ICIPRM.1990.202980","DOIUrl":"https://doi.org/10.1109/ICIPRM.1990.202980","url":null,"abstract":"Nominally undoped semi-insulating (SI) InP (p approximately=10/sup 7/ Omega cm) was prepared by annealing of InP wafers in a phosphorus atmosphere. The electronic transport properties are compared to those of Fe-doped (SI) InP crystals grown by the liquid-encapsulated-Czochralski (LEC) technique. The values of the electron mobility of the undoped SI material are considerably higher than those of the Fe-doped and are close to the theoretical values of undoped InP. Depth profiles of the carrier concentration show a strong variation within the first 20 mu m, which can be fitted by the literature data of the diffusion coefficients of P and In, but the bulk SI behavior of the samples cannot be explained by self-diffusion mechanisms. The position of the energy level of the deep acceptor is found to lie 0.67+or-0.02 eV below the edge of the conduction band. Although this value is close to that of Fe/sup 3+/2+/ the results of chemical analysis make it unlikely that Fe is the acceptor.<<ETX>>","PeriodicalId":138960,"journal":{"name":"International Conference on Indium Phosphide and Related Materials","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130234510","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1990-04-23DOI: 10.1109/ICIPRM.1990.203033
M. Meyyappan, G. Andrews, B. J. Morrison, J. P. Kreskovsky, J.P. Grubin, H. Grubin
The results of a two-dimensional simulation of an InP/InGaAs double heterostructure bipolar transistor are discussed. High-frequency performance is evaluated from transient solutions to the governing equations. The computed f/sub max/ is found to be larger than twice f/sub I/ over a wide range of collector current; values of f/sub max/ as high as 190 GHz have been computed for unoptimized structures. Proper doping and compositional grading in the base and collector layers are shown to reduce the problem of the conduction band spike at high collector current densities.<>
{"title":"Analysis of InP/InGaAs double heterostructure bipolar transistors for high frequency applications","authors":"M. Meyyappan, G. Andrews, B. J. Morrison, J. P. Kreskovsky, J.P. Grubin, H. Grubin","doi":"10.1109/ICIPRM.1990.203033","DOIUrl":"https://doi.org/10.1109/ICIPRM.1990.203033","url":null,"abstract":"The results of a two-dimensional simulation of an InP/InGaAs double heterostructure bipolar transistor are discussed. High-frequency performance is evaluated from transient solutions to the governing equations. The computed f/sub max/ is found to be larger than twice f/sub I/ over a wide range of collector current; values of f/sub max/ as high as 190 GHz have been computed for unoptimized structures. Proper doping and compositional grading in the base and collector layers are shown to reduce the problem of the conduction band spike at high collector current densities.<<ETX>>","PeriodicalId":138960,"journal":{"name":"International Conference on Indium Phosphide and Related Materials","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129948973","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1990-04-23DOI: 10.1109/ICIPRM.1990.203068
G. Carver, R. D. Moore, K. Trapp, P. Kahora, F. Stevie
Semi-insulating InP wafers for electronic and opto-electronic devices must have spatially uniform resistivities (above 1E7 Omega -cm) for high-yield manufacture. Spatially resolved photoluminescence scans have revealed localized regions of high luminescent efficiency in liquid-encapsulated-Czochralski InP:Fe obtained from two commercial suppliers. These bright spots have dimensions in the micron range, and a density approaching 1E5/cm/sup 2/. Secondary ion mass spectroscopy has shown that the spots contain silicon and iron contaminants. The silicon concentration exceeds 1E20/cm/sup 3/, whereas the iron concentration is 100 times below that of the silicon. A resistivity below 1 Omega -cm would be expected near the spots. These features may generate parasitic capacitance that could affect the yield of integrated circuits and opto-electronic arrays.<>
{"title":"Detection of compositional non-uniformities in InP:Fe via spatially resolved photoluminescence and secondary ion mass spectrometry","authors":"G. Carver, R. D. Moore, K. Trapp, P. Kahora, F. Stevie","doi":"10.1109/ICIPRM.1990.203068","DOIUrl":"https://doi.org/10.1109/ICIPRM.1990.203068","url":null,"abstract":"Semi-insulating InP wafers for electronic and opto-electronic devices must have spatially uniform resistivities (above 1E7 Omega -cm) for high-yield manufacture. Spatially resolved photoluminescence scans have revealed localized regions of high luminescent efficiency in liquid-encapsulated-Czochralski InP:Fe obtained from two commercial suppliers. These bright spots have dimensions in the micron range, and a density approaching 1E5/cm/sup 2/. Secondary ion mass spectroscopy has shown that the spots contain silicon and iron contaminants. The silicon concentration exceeds 1E20/cm/sup 3/, whereas the iron concentration is 100 times below that of the silicon. A resistivity below 1 Omega -cm would be expected near the spots. These features may generate parasitic capacitance that could affect the yield of integrated circuits and opto-electronic arrays.<<ETX>>","PeriodicalId":138960,"journal":{"name":"International Conference on Indium Phosphide and Related Materials","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129696851","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1990-04-23DOI: 10.1109/ICIPRM.1990.202990
P. Rolland, M. Friscourt, C. Dalle, D. Lippens
Advances in the performance of millimeter-wave two-terminal devices, namely, Gunn, IMPATT, and resonant tunneling diodes, are reviewed, and results for the different semiconductor materials systems used (Si, GaAs, InP) are compared. Plots of the state-of-the-art power-versus-frequency performance experimentally achieved with Gunn and IMPATT diodes confirm the preeminence of Si IMPATTs as high-power solid-state sources and that of InP as medium-power local oscillators. A stable summarizing the main characteristics of the most interesting resonant tunneling diodes that have been grown so far is given.<>
{"title":"Comparison between InP and other semiconductor, materials for the realization of millimeter wave two terminal devices","authors":"P. Rolland, M. Friscourt, C. Dalle, D. Lippens","doi":"10.1109/ICIPRM.1990.202990","DOIUrl":"https://doi.org/10.1109/ICIPRM.1990.202990","url":null,"abstract":"Advances in the performance of millimeter-wave two-terminal devices, namely, Gunn, IMPATT, and resonant tunneling diodes, are reviewed, and results for the different semiconductor materials systems used (Si, GaAs, InP) are compared. Plots of the state-of-the-art power-versus-frequency performance experimentally achieved with Gunn and IMPATT diodes confirm the preeminence of Si IMPATTs as high-power solid-state sources and that of InP as medium-power local oscillators. A stable summarizing the main characteristics of the most interesting resonant tunneling diodes that have been grown so far is given.<<ETX>>","PeriodicalId":138960,"journal":{"name":"International Conference on Indium Phosphide and Related Materials","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127597434","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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