Pub Date : 1990-04-23DOI: 10.1109/ICIPRM.1990.203000
B. Lee, D. K. Sengupta, W. R. Miller, S. A. Stockman, I. Szafranek, M. J. Mccollum, G. Stillman
Changes in the characteristics of high-purity n-type InP samples with time have been studied using variable-temperature Hall effect measurements, photoluminescence, and photothermal ionization spectroscopy. The results indicate that the aging effect is a bulk effect and that it results from a major reduction in N/sub D/. The aging effect can be reversed by a short anneal at a temperature above 170 degrees C. The spectroscopy results show that the change in N/sub D/ is due entirely to a change in the Si shallow donor concentration. However, the mechanism of reduction of the shallow Si donor concentration with aging remains unknown. It seems probable that a limited concentration of unknown defect centers is involved and that the Si donors combine with these unknown defect centers to form inactive centers or to change the Si donor binding energy from shallow to deep level.<>
{"title":"Characterization of an aging effect in high purity indium phosphide","authors":"B. Lee, D. K. Sengupta, W. R. Miller, S. A. Stockman, I. Szafranek, M. J. Mccollum, G. Stillman","doi":"10.1109/ICIPRM.1990.203000","DOIUrl":"https://doi.org/10.1109/ICIPRM.1990.203000","url":null,"abstract":"Changes in the characteristics of high-purity n-type InP samples with time have been studied using variable-temperature Hall effect measurements, photoluminescence, and photothermal ionization spectroscopy. The results indicate that the aging effect is a bulk effect and that it results from a major reduction in N/sub D/. The aging effect can be reversed by a short anneal at a temperature above 170 degrees C. The spectroscopy results show that the change in N/sub D/ is due entirely to a change in the Si shallow donor concentration. However, the mechanism of reduction of the shallow Si donor concentration with aging remains unknown. It seems probable that a limited concentration of unknown defect centers is involved and that the Si donors combine with these unknown defect centers to form inactive centers or to change the Si donor binding energy from shallow to deep level.<<ETX>>","PeriodicalId":138960,"journal":{"name":"International Conference on Indium Phosphide and Related Materials","volume":"72 1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122508531","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1990-04-23DOI: 10.1109/ICIPRM.1990.203017
T. Lowes, D. Cassidy
Photochemical (PC) etching of n-InP using an Ar/sup +/ laser and dilute phosphoric acid solutions was studied as a function of temperature, power, illumination frequency, and duty cycle. The process was found to be reaction-rate limited with an activation energy >or=0.34 eV. The photo-etch rate, i.e. the etch rate divided by the fraction of time the Ar/sup +/ light is on, was found to be a function of the illumination duty cycle but not the chopping frequency in the range 100-3200 Hz. These results are explained on the basis of a rate equation model for material removal. An application for PC etching is presented in which n-InP wafers 35-200- mu m thick were prepared for observation in the transmission electron microscope.<>
{"title":"Photochemical etching of n-InP: temperature, power and frequency studies","authors":"T. Lowes, D. Cassidy","doi":"10.1109/ICIPRM.1990.203017","DOIUrl":"https://doi.org/10.1109/ICIPRM.1990.203017","url":null,"abstract":"Photochemical (PC) etching of n-InP using an Ar/sup +/ laser and dilute phosphoric acid solutions was studied as a function of temperature, power, illumination frequency, and duty cycle. The process was found to be reaction-rate limited with an activation energy >or=0.34 eV. The photo-etch rate, i.e. the etch rate divided by the fraction of time the Ar/sup +/ light is on, was found to be a function of the illumination duty cycle but not the chopping frequency in the range 100-3200 Hz. These results are explained on the basis of a rate equation model for material removal. An application for PC etching is presented in which n-InP wafers 35-200- mu m thick were prepared for observation in the transmission electron microscope.<<ETX>>","PeriodicalId":138960,"journal":{"name":"International Conference on Indium Phosphide and Related Materials","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127177297","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1990-04-23DOI: 10.1109/ICIPRM.1990.203019
R. Muller
The use of in-situ ellipsometry at a wavelength of 1300 nm for etch depth measurement and endpoint detection during reactive ion etching (RIE) of InGaAs(P)/InP heterostructures is reported. The basic principle and the experimental technique are briefly described. It is shown that etch depth monitoring and endpoint detection can be performed as low as 0.1. Furthermore, the method has been used for in-situ measurement of the wafer temperature during plasma exposure.<>
{"title":"Control of a reactive ion etching process for InP and related materials by in-situ ellipsometry in the near infrared","authors":"R. Muller","doi":"10.1109/ICIPRM.1990.203019","DOIUrl":"https://doi.org/10.1109/ICIPRM.1990.203019","url":null,"abstract":"The use of in-situ ellipsometry at a wavelength of 1300 nm for etch depth measurement and endpoint detection during reactive ion etching (RIE) of InGaAs(P)/InP heterostructures is reported. The basic principle and the experimental technique are briefly described. It is shown that etch depth monitoring and endpoint detection can be performed as low as 0.1. Furthermore, the method has been used for in-situ measurement of the wafer temperature during plasma exposure.<<ETX>>","PeriodicalId":138960,"journal":{"name":"International Conference on Indium Phosphide and Related Materials","volume":"71 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125189911","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1990-04-23DOI: 10.1109/ICIPRM.1990.203014
B. Sartorius, M. Brandstattner
A new technique for fast and nondestructive thickness mapping based on optical absorption measurements is presented. An experimental setup in which unspecified losses are eliminated by a two-wavelength arrangement and precision and stability are improved is described. High resolution and speed are obtained. Results for InGaAsP/InP epitaxial layers demonstrate the capability to detect thickness variations in the 10-nm range. Buried layers inside heterostructures can be measured selectively.<>
{"title":"Nondestructive thickness mapping of epitaxial InGaAsP/InP layers","authors":"B. Sartorius, M. Brandstattner","doi":"10.1109/ICIPRM.1990.203014","DOIUrl":"https://doi.org/10.1109/ICIPRM.1990.203014","url":null,"abstract":"A new technique for fast and nondestructive thickness mapping based on optical absorption measurements is presented. An experimental setup in which unspecified losses are eliminated by a two-wavelength arrangement and precision and stability are improved is described. High resolution and speed are obtained. Results for InGaAsP/InP epitaxial layers demonstrate the capability to detect thickness variations in the 10-nm range. Buried layers inside heterostructures can be measured selectively.<<ETX>>","PeriodicalId":138960,"journal":{"name":"International Conference on Indium Phosphide and Related Materials","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131677599","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1990-04-23DOI: 10.1109/ICIPRM.1990.203062
T. Chang, J. Zucker, K.L. Jones, N. Sauer, B. Tell, M. Wegener, D. Chemla
The band-filling effect in a blockaded reservoir and quantum-well electron transfer structure (BRAQWETS) was used to achieve the very low voltage-length product (2.1 V-mm) needed to produce a 180 degrees phase shift in a monolithic Mach-Zehnder interferometer. The high sensitivity, high speed, good linearity, and low chirp of the BRAQWETS modulator make it an attractive device for lightwave applications. The structures used contain five to eight periods of BRAQWETS each with an n-doped electron reservoir and an undoped spacer layer of AlGaInAs (1-eV bandgap), a GaInAs quantum well, and an AlInAs blocking barrier. This waveguide core is surrounded by n-doped cladding layers of AlInAs. The leakage current under bias in this n-i-n structure remains low owing to the large conduction-band discontinuity (0.52 eV) available between AlInAs and GaInAs.<>
{"title":"Very high sensitivity optical modulators based on band filling effect in GaInAs quantum wells","authors":"T. Chang, J. Zucker, K.L. Jones, N. Sauer, B. Tell, M. Wegener, D. Chemla","doi":"10.1109/ICIPRM.1990.203062","DOIUrl":"https://doi.org/10.1109/ICIPRM.1990.203062","url":null,"abstract":"The band-filling effect in a blockaded reservoir and quantum-well electron transfer structure (BRAQWETS) was used to achieve the very low voltage-length product (2.1 V-mm) needed to produce a 180 degrees phase shift in a monolithic Mach-Zehnder interferometer. The high sensitivity, high speed, good linearity, and low chirp of the BRAQWETS modulator make it an attractive device for lightwave applications. The structures used contain five to eight periods of BRAQWETS each with an n-doped electron reservoir and an undoped spacer layer of AlGaInAs (1-eV bandgap), a GaInAs quantum well, and an AlInAs blocking barrier. This waveguide core is surrounded by n-doped cladding layers of AlInAs. The leakage current under bias in this n-i-n structure remains low owing to the large conduction-band discontinuity (0.52 eV) available between AlInAs and GaInAs.<<ETX>>","PeriodicalId":138960,"journal":{"name":"International Conference on Indium Phosphide and Related Materials","volume":"207 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131801012","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1990-04-23DOI: 10.1109/ICIPRM.1990.203036
G. A. Johnson, V. Kapoor, L. Messick, R. Nguyen, R. Stall, M. Mckee
The fabrication of InGaAs MISFETs with 1- mu m gate lengths and up to 1-mm gate widths using an ion-implanted process is reported. The devices demonstrated an output power density of 1.07 W/mm at 9.7 GHz with a corresponding power gain and power-added efficiency of 4.3 dB and 38%, respectively. A novel plasma deposited silicon/silicon oxide gate insulator was employed to achieve an output power stability within 1.2% over 24 h of continuous operation, with a corresponding drain bias current increase of less than 4%.<>
{"title":"High frequency transistors on MOCVD grown InGaAs/InP","authors":"G. A. Johnson, V. Kapoor, L. Messick, R. Nguyen, R. Stall, M. Mckee","doi":"10.1109/ICIPRM.1990.203036","DOIUrl":"https://doi.org/10.1109/ICIPRM.1990.203036","url":null,"abstract":"The fabrication of InGaAs MISFETs with 1- mu m gate lengths and up to 1-mm gate widths using an ion-implanted process is reported. The devices demonstrated an output power density of 1.07 W/mm at 9.7 GHz with a corresponding power gain and power-added efficiency of 4.3 dB and 38%, respectively. A novel plasma deposited silicon/silicon oxide gate insulator was employed to achieve an output power stability within 1.2% over 24 h of continuous operation, with a corresponding drain bias current increase of less than 4%.<<ETX>>","PeriodicalId":138960,"journal":{"name":"International Conference on Indium Phosphide and Related Materials","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129325371","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1990-04-23DOI: 10.1109/ICIPRM.1990.203026
B.M. Yu, J.M. Liu, J. Lacourse
Frequency responses of 1.3- mu m InGaAsP/InP semiconductor lasers emitting in both transverse-electric and transverse-magnetic polarizations have been measured. It is found that lasers with different polarization-dependent power-versus-current characteristics show different polarization-dependent frequency responses. A polarization-dependent rate-equation model has been used with small-signal analysis to simulate the observations. The relative modulation bandwidths and the low-frequency modulation of the two polarizations can be explained. This model does not fit well at high frequencies because of the parasitics.<>
测量了在横向电极化和横向磁极化下发射的1.3 μ m InGaAsP/InP半导体激光器的频率响应。研究发现，具有不同极化相关功率电流特性的激光器具有不同的极化相关频率响应。利用偏振相关的速率方程模型和小信号分析来模拟观测结果。可以解释两种极化的相对调制带宽和低频调制。由于寄生效应的影响，该模型在高频处不太适合
{"title":"Polarization-dependent frequency responses of 1.3- mu m InGaAsP/InP BH-VPR semiconductor lasers","authors":"B.M. Yu, J.M. Liu, J. Lacourse","doi":"10.1109/ICIPRM.1990.203026","DOIUrl":"https://doi.org/10.1109/ICIPRM.1990.203026","url":null,"abstract":"Frequency responses of 1.3- mu m InGaAsP/InP semiconductor lasers emitting in both transverse-electric and transverse-magnetic polarizations have been measured. It is found that lasers with different polarization-dependent power-versus-current characteristics show different polarization-dependent frequency responses. A polarization-dependent rate-equation model has been used with small-signal analysis to simulate the observations. The relative modulation bandwidths and the low-frequency modulation of the two polarizations can be explained. This model does not fit well at high frequencies because of the parasitics.<<ETX>>","PeriodicalId":138960,"journal":{"name":"International Conference on Indium Phosphide and Related Materials","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130804688","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1990-04-23DOI: 10.1109/ICIPRM.1990.203038
S. Bland, A. Galashan, S. Kitching
High-transconductance Pt/a-Si:H-gate In/sub 0.53/Ga/sub 0.47/As FETs have been fabricated using an MOCVD grown n-InGaAs channel layer and a thin layer of PECVD hydrogenated amorphous silicon (a-Si:H) to enhance the Schottky barrier height of the metal contact. The reverse characteristic of the Schottky diode is characterized by an early soft breakdown, and the leakage current is relatively high at a few mA (V/sub gs/=-2 V) for a 1.5- mu m*100- mu m-gate device, although this is probably caused by the a-Si:H layer being too thin (100 AA). Similar devices fabricated using a 900-AA-thick layer yield a leakage current of about 5 nA for equivalent devices and bias conditions. The best MESFET devices exhibit a transconductance of 218 mS/mm at V/sub gs/=0 V and a peak transconductance of up to 249 mS/mm. The devices have a threshold voltage of around -3.5 V.<>
{"title":"High transconductance InGaAs FETs using an undoped amorphous silicon Schottky barrier enhancement layer","authors":"S. Bland, A. Galashan, S. Kitching","doi":"10.1109/ICIPRM.1990.203038","DOIUrl":"https://doi.org/10.1109/ICIPRM.1990.203038","url":null,"abstract":"High-transconductance Pt/a-Si:H-gate In/sub 0.53/Ga/sub 0.47/As FETs have been fabricated using an MOCVD grown n-InGaAs channel layer and a thin layer of PECVD hydrogenated amorphous silicon (a-Si:H) to enhance the Schottky barrier height of the metal contact. The reverse characteristic of the Schottky diode is characterized by an early soft breakdown, and the leakage current is relatively high at a few mA (V/sub gs/=-2 V) for a 1.5- mu m*100- mu m-gate device, although this is probably caused by the a-Si:H layer being too thin (100 AA). Similar devices fabricated using a 900-AA-thick layer yield a leakage current of about 5 nA for equivalent devices and bias conditions. The best MESFET devices exhibit a transconductance of 218 mS/mm at V/sub gs/=0 V and a peak transconductance of up to 249 mS/mm. The devices have a threshold voltage of around -3.5 V.<<ETX>>","PeriodicalId":138960,"journal":{"name":"International Conference on Indium Phosphide and Related Materials","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126887227","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1990-04-23DOI: 10.1109/ICIPRM.1990.203001
B.X. Yang, H. Ishii, K. Iizuka, H. Hasegawa, H. Ohno
The feasibility of molecular-beam epitaxy (MBE) and migration-enhanced epitaxy (MEE) growth of InP in the standard GaAs-type MBE chamber was demonstrated using polycrystalline InP as the phosphorus source. The substrate was a semi-insulating (Fe-doped) InP substrate with
{"title":"MBE growth of InP using polycrystalline InP as phosphorus source","authors":"B.X. Yang, H. Ishii, K. Iizuka, H. Hasegawa, H. Ohno","doi":"10.1109/ICIPRM.1990.203001","DOIUrl":"https://doi.org/10.1109/ICIPRM.1990.203001","url":null,"abstract":"The feasibility of molecular-beam epitaxy (MBE) and migration-enhanced epitaxy (MEE) growth of InP in the standard GaAs-type MBE chamber was demonstrated using polycrystalline InP as the phosphorus source. The substrate was a semi-insulating (Fe-doped) InP substrate with","PeriodicalId":138960,"journal":{"name":"International Conference on Indium Phosphide and Related Materials","volume":"66 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129331119","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1990-04-23DOI: 10.1109/ICIPRM.1990.203061
R. Jain, D. Flood
An attempt is made to estimate the minority carrier diffusion lengths in the emitter and base of InP/GaAs heteroepitaxial solar cells. The PC-1D computer model was used to simulate the measured cell results obtained under AM0-spectrum at 25 degrees C. A 16-nm hole diffusion length in the emitter and a 0.42- mu m electron diffusion length in the base gave good agreement with the I-V curve. The effect of varying minority carrier diffusion lengths on cell short-circuit current, open-circuit voltage, and efficiency was studied. It was also observed that the front surface recombination velocity has very little influence on the cell performance. Cell efficiency as a function of dislocation density was calculated, and the effect of improved emitter bulk properties on cell efficiency is presented.<>
{"title":"Estimation of minority carrier diffusion lengths in InP/GaAs solar cells","authors":"R. Jain, D. Flood","doi":"10.1109/ICIPRM.1990.203061","DOIUrl":"https://doi.org/10.1109/ICIPRM.1990.203061","url":null,"abstract":"An attempt is made to estimate the minority carrier diffusion lengths in the emitter and base of InP/GaAs heteroepitaxial solar cells. The PC-1D computer model was used to simulate the measured cell results obtained under AM0-spectrum at 25 degrees C. A 16-nm hole diffusion length in the emitter and a 0.42- mu m electron diffusion length in the base gave good agreement with the I-V curve. The effect of varying minority carrier diffusion lengths on cell short-circuit current, open-circuit voltage, and efficiency was studied. It was also observed that the front surface recombination velocity has very little influence on the cell performance. Cell efficiency as a function of dislocation density was calculated, and the effect of improved emitter bulk properties on cell efficiency is presented.<<ETX>>","PeriodicalId":138960,"journal":{"name":"International Conference on Indium Phosphide and Related Materials","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133886974","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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