Pub Date : 1990-04-23DOI: 10.1109/ICIPRM.1990.202978
W. Stanchina, R. Metzger, J. Jensen, D. Rensch, M. W. Pierce, M. Delaney, R. G. Wilson, T. V. Kargodorian, Y. K. Allen
GaInAs grown at lower than normal substrate temperatures was used to reduce the amount of beryllium out-diffusion from the heavily doped bases of AlInAs/GaInAs Npn HBTs. A combined 20-nm-thick spacer structure of p-doped and undoped GaInAs grown at 300 degrees C prevented excessive amounts of beryllium from diffusing into the AlInAs emitter. This allowed base beryllium doping concentrations up to 10/sup 20/ cm/sup -3/ to be achieved, thereby reducing base resistance and increasing f/sub max/ to 70 GHz. A fifteen-stage ring oscillator utilizing these HBTs demonstrated a gate delay of 15.8 ps. The reduced outdiffusion was confirmed by secondary ion mass spectrometry (SIMS) elemental profiles in addition to electrical measurements.<>
{"title":"Improved high frequency performance of AlInAs/GaInAs HBTs through use of low temperature GaInAs","authors":"W. Stanchina, R. Metzger, J. Jensen, D. Rensch, M. W. Pierce, M. Delaney, R. G. Wilson, T. V. Kargodorian, Y. K. Allen","doi":"10.1109/ICIPRM.1990.202978","DOIUrl":"https://doi.org/10.1109/ICIPRM.1990.202978","url":null,"abstract":"GaInAs grown at lower than normal substrate temperatures was used to reduce the amount of beryllium out-diffusion from the heavily doped bases of AlInAs/GaInAs Npn HBTs. A combined 20-nm-thick spacer structure of p-doped and undoped GaInAs grown at 300 degrees C prevented excessive amounts of beryllium from diffusing into the AlInAs emitter. This allowed base beryllium doping concentrations up to 10/sup 20/ cm/sup -3/ to be achieved, thereby reducing base resistance and increasing f/sub max/ to 70 GHz. A fifteen-stage ring oscillator utilizing these HBTs demonstrated a gate delay of 15.8 ps. The reduced outdiffusion was confirmed by secondary ion mass spectrometry (SIMS) elemental profiles in addition to electrical measurements.<<ETX>>","PeriodicalId":138960,"journal":{"name":"International Conference on Indium Phosphide and Related Materials","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132721969","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1990-04-23DOI: 10.1109/ICIPRM.1990.203057
D. Stevanović, P. Ferret, D. A. Thompson
A change in the surface morphology of
表面形态的变化
{"title":"Variations in surface morphology of ion implanted InP after rapid thermal annealing","authors":"D. Stevanović, P. Ferret, D. A. Thompson","doi":"10.1109/ICIPRM.1990.203057","DOIUrl":"https://doi.org/10.1109/ICIPRM.1990.203057","url":null,"abstract":"A change in the surface morphology of","PeriodicalId":138960,"journal":{"name":"International Conference on Indium Phosphide and Related Materials","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114848193","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1990-04-23DOI: 10.1109/ICIPRM.1990.203016
S. R. Collins, A. Barnett, M. H. Hannon, J. Joannides
A fabrication technique called SLPE (selective liquid phase epitaxy) is described for growing InP films on silicon substrates. SLPE is expected to limit the propagation of dislocations in two ways: the LPE process itself terminates dislocations at the growth interface, and contact between the substrate and the growth material is limited by a selective silicon dioxide mask. Currently, this mask is composed of 5- mu m silicon dioxide strips limiting the contact area to 20- mu m strips of silicon. Single-crystal InP has been grown directly on silicon substrates. A 1-2- mu m nucleation enhancement (NE) layer is grown selectively between the silicon dioxide stripes, directly contacting the silicon substrate. The InP LPE film nucleates from this NE layer and growth proceeds vertically and laterally to overgrow the silicon dioxide mask.<>
{"title":"Selective liquid phase epitaxial growth of InP on silicon","authors":"S. R. Collins, A. Barnett, M. H. Hannon, J. Joannides","doi":"10.1109/ICIPRM.1990.203016","DOIUrl":"https://doi.org/10.1109/ICIPRM.1990.203016","url":null,"abstract":"A fabrication technique called SLPE (selective liquid phase epitaxy) is described for growing InP films on silicon substrates. SLPE is expected to limit the propagation of dislocations in two ways: the LPE process itself terminates dislocations at the growth interface, and contact between the substrate and the growth material is limited by a selective silicon dioxide mask. Currently, this mask is composed of 5- mu m silicon dioxide strips limiting the contact area to 20- mu m strips of silicon. Single-crystal InP has been grown directly on silicon substrates. A 1-2- mu m nucleation enhancement (NE) layer is grown selectively between the silicon dioxide stripes, directly contacting the silicon substrate. The InP LPE film nucleates from this NE layer and growth proceeds vertically and laterally to overgrow the silicon dioxide mask.<<ETX>>","PeriodicalId":138960,"journal":{"name":"International Conference on Indium Phosphide and Related Materials","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129271087","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1990-04-23DOI: 10.1109/ICIPRM.1990.202994
D. Newson, R. Merrett, M. Lee, E. Scott
A study was performed to investigate whether the noise performance of delta-doped heterostructure-insulated-gate FETs (HIGFETs) is adequate for optical receiver applications. The suitability of gate insulator and buffer layers of both AlInAs and InP was investigated. The former has the wider bandgap and will thus give better confinement and lower gate leakage currents, whereas InP has the prospect of reduced trapping and thus of lower noise. The test structures and experimental procedures are described, and the results are discussed. It is found that the lower trap density of InP buffer layers does result in better noise performance if the bias conditions are chosen to minimize the effect of the poorer carrier confinement of InP.<>
{"title":"Influence of buffer layer material on InGaAs FET optimisation","authors":"D. Newson, R. Merrett, M. Lee, E. Scott","doi":"10.1109/ICIPRM.1990.202994","DOIUrl":"https://doi.org/10.1109/ICIPRM.1990.202994","url":null,"abstract":"A study was performed to investigate whether the noise performance of delta-doped heterostructure-insulated-gate FETs (HIGFETs) is adequate for optical receiver applications. The suitability of gate insulator and buffer layers of both AlInAs and InP was investigated. The former has the wider bandgap and will thus give better confinement and lower gate leakage currents, whereas InP has the prospect of reduced trapping and thus of lower noise. The test structures and experimental procedures are described, and the results are discussed. It is found that the lower trap density of InP buffer layers does result in better noise performance if the bias conditions are chosen to minimize the effect of the poorer carrier confinement of InP.<<ETX>>","PeriodicalId":138960,"journal":{"name":"International Conference on Indium Phosphide and Related Materials","volume":"18 2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131352647","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1990-04-23DOI: 10.1109/ICIPRM.1990.203067
R. Fornari, P. Franzosi, J. Kumar, G. Salviati
InP bulk crystals double-doped with Cd and S were investigated in depth by scanning electron microscopy, transmission electron microscopy, and X-ray topography. The investigations confirm that InP:(CdS) presents a lower dislocation density than other n-type material with the same carrier concentration but that it contains two additional microdefects, namely, large and small precipitates that are seen to pin the dislocation lines and to prevent their propagation. The bigger particles appear to be crystalline CdS. The nature of the small particles is not clear.<>
{"title":"LEC growth and structural characterization of low-EPD co-doped indium phosphide","authors":"R. Fornari, P. Franzosi, J. Kumar, G. Salviati","doi":"10.1109/ICIPRM.1990.203067","DOIUrl":"https://doi.org/10.1109/ICIPRM.1990.203067","url":null,"abstract":"InP bulk crystals double-doped with Cd and S were investigated in depth by scanning electron microscopy, transmission electron microscopy, and X-ray topography. The investigations confirm that InP:(CdS) presents a lower dislocation density than other n-type material with the same carrier concentration but that it contains two additional microdefects, namely, large and small precipitates that are seen to pin the dislocation lines and to prevent their propagation. The bigger particles appear to be crystalline CdS. The nature of the small particles is not clear.<<ETX>>","PeriodicalId":138960,"journal":{"name":"International Conference on Indium Phosphide and Related Materials","volume":"120 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121620115","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1990-04-23DOI: 10.1109/ICIPRM.1990.202981
G. Iseler, H. Clark
The use of a horizontal gradient-freeze (HGF) method employing a sealed pressure-balanced system for synthesis and in situ crystal growth without encapsulation is described. The thermal stability of semi-insulating InP:Ti,Hg is discussed, and synthesis by conventional methods and by liquid-encapsulated Czochralski (LEC) growth is considered. Synthesis and HGF growth under controlled P pressure are then examined. Since the melt is not encapsulated, the P pressure can be adjusted to obtain the optimum melt composition for minimizing defect density, impurity contamination, and twinning. In addition, in situ growth prevents impurity contamination that can results when a growth charge synthesized in one system is transferred to a second system for crystal growth.<>
{"title":"Horizontal gradient-freeze growth of InP crystals under controlled pressure","authors":"G. Iseler, H. Clark","doi":"10.1109/ICIPRM.1990.202981","DOIUrl":"https://doi.org/10.1109/ICIPRM.1990.202981","url":null,"abstract":"The use of a horizontal gradient-freeze (HGF) method employing a sealed pressure-balanced system for synthesis and in situ crystal growth without encapsulation is described. The thermal stability of semi-insulating InP:Ti,Hg is discussed, and synthesis by conventional methods and by liquid-encapsulated Czochralski (LEC) growth is considered. Synthesis and HGF growth under controlled P pressure are then examined. Since the melt is not encapsulated, the P pressure can be adjusted to obtain the optimum melt composition for minimizing defect density, impurity contamination, and twinning. In addition, in situ growth prevents impurity contamination that can results when a growth charge synthesized in one system is transferred to a second system for crystal growth.<<ETX>>","PeriodicalId":138960,"journal":{"name":"International Conference on Indium Phosphide and Related Materials","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126558677","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1990-04-23DOI: 10.1109/ICIPRM.1990.203023
S. Krawczyk, K. Schohe, M. Garrigues, J. Tardy
It is shown how scanning photoluminescence (SPL) measurements can be used to obtain information about, to optimize, and to control InP and related compound semiconductor technologies. It is shown how the PL intensity from an InP substrate varies after successive steps during four different passivation processes, and the information gained thereby is discussed. An example is presented to demonstrate how SPL measurements can be used to optimize the gate recess step in the realization of InP MISFETs. Two possibilities for the routine inline control of successive steps in the processing of compound semiconductor devices using SPL measurements are described: automatic recognition and counting of defects appearing on SPL images (most of which cannot be revealed by optical microscopy) and analysis of statistical parameters describing the SPL data.<>
{"title":"Expertise, optimisation and control of InP and related technologies by scanning photoluminescence measurements","authors":"S. Krawczyk, K. Schohe, M. Garrigues, J. Tardy","doi":"10.1109/ICIPRM.1990.203023","DOIUrl":"https://doi.org/10.1109/ICIPRM.1990.203023","url":null,"abstract":"It is shown how scanning photoluminescence (SPL) measurements can be used to obtain information about, to optimize, and to control InP and related compound semiconductor technologies. It is shown how the PL intensity from an InP substrate varies after successive steps during four different passivation processes, and the information gained thereby is discussed. An example is presented to demonstrate how SPL measurements can be used to optimize the gate recess step in the realization of InP MISFETs. Two possibilities for the routine inline control of successive steps in the processing of compound semiconductor devices using SPL measurements are described: automatic recognition and counting of defects appearing on SPL images (most of which cannot be revealed by optical microscopy) and analysis of statistical parameters describing the SPL data.<<ETX>>","PeriodicalId":138960,"journal":{"name":"International Conference on Indium Phosphide and Related Materials","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114067816","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1990-04-23DOI: 10.1109/ICIPRM.1990.203044
R. Singh, M. J. Semnani, J. Cruz, S. Sinha
A hybrid superconductor/InP resonant tunneling transistor (RTT) has been used to design a superfast 8*8-bit digital multiplier/accumulator circuit operating at 77 K with a multiplication time of 152 ps. The transistor structure and performance are described. Preliminary work toward realizing the RTT is reported. In particular, results concerning the deposition of Y-Ba-Cu-O superconducting thin films on Si substrate by rapid-isothermal-processing-assisted metalorganic chemical vapor deposition are presented.<>
{"title":"Hybrid electronics based on InP and high temperature superconductors","authors":"R. Singh, M. J. Semnani, J. Cruz, S. Sinha","doi":"10.1109/ICIPRM.1990.203044","DOIUrl":"https://doi.org/10.1109/ICIPRM.1990.203044","url":null,"abstract":"A hybrid superconductor/InP resonant tunneling transistor (RTT) has been used to design a superfast 8*8-bit digital multiplier/accumulator circuit operating at 77 K with a multiplication time of 152 ps. The transistor structure and performance are described. Preliminary work toward realizing the RTT is reported. In particular, results concerning the deposition of Y-Ba-Cu-O superconducting thin films on Si substrate by rapid-isothermal-processing-assisted metalorganic chemical vapor deposition are presented.<<ETX>>","PeriodicalId":138960,"journal":{"name":"International Conference on Indium Phosphide and Related Materials","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123933128","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1990-04-23DOI: 10.1109/ICIPRM.1990.202977
A. Levi, R. Nottenburg, B. Jalali, A. Cho, M. Panish
It is shown how an understanding of the physics of nonequilibrium electron transport in III-V semiconductors can usefully be applied to determining the limits of n-p-n InP/In/sub 0.53/Ga/sub 0.47/As heterostructure bipolar transistor device performance. For example, it is seen that nonequilibrium transport in In/sub 0.53/Ga/sub 0.47/As improves static transistor characteristics such as current gain and minimum lateral dimensions. In addition, the fastest bipolar transistors make use of high velocity Gamma -valley nonequilibrium electron transport in In/sub 0.53/Ga/sub 0.47/As. A thin, highly-doped base with an impurity concentration p>10/sup 20/ cm/sup -3/ has a negligible base transit time and collector transit delay dominates the intrinsic response. Ultra-high-speed heterostructure bipolar transistors perform best with small signals and low collector voltages.<>
{"title":"Physics and high speed devices","authors":"A. Levi, R. Nottenburg, B. Jalali, A. Cho, M. Panish","doi":"10.1109/ICIPRM.1990.202977","DOIUrl":"https://doi.org/10.1109/ICIPRM.1990.202977","url":null,"abstract":"It is shown how an understanding of the physics of nonequilibrium electron transport in III-V semiconductors can usefully be applied to determining the limits of n-p-n InP/In/sub 0.53/Ga/sub 0.47/As heterostructure bipolar transistor device performance. For example, it is seen that nonequilibrium transport in In/sub 0.53/Ga/sub 0.47/As improves static transistor characteristics such as current gain and minimum lateral dimensions. In addition, the fastest bipolar transistors make use of high velocity Gamma -valley nonequilibrium electron transport in In/sub 0.53/Ga/sub 0.47/As. A thin, highly-doped base with an impurity concentration p>10/sup 20/ cm/sup -3/ has a negligible base transit time and collector transit delay dominates the intrinsic response. Ultra-high-speed heterostructure bipolar transistors perform best with small signals and low collector voltages.<<ETX>>","PeriodicalId":138960,"journal":{"name":"International Conference on Indium Phosphide and Related Materials","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121263203","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1990-04-23DOI: 10.1109/ICIPRM.1990.203009
J. Wasserbauer, T. Fukushima, J. Bowers, S. Zehr, R. Haung
Semi-insulating (SI) planar buried heterostructure (SIPBH) lasers, designed to minimize device parasitics, have been fabricated for high-speed operation. The I-V characteristics of the Fe-doped SI InP employed for the current blocking layers were examined at elevated temperatures associated with high speed laser operation. It was found that the trap filled voltage, V/sub TF/, decreases linearly with increasing temperature. However, a SI InP layer with a V/sub TF/ at room temperature of 70 V demonstrated current blocking characteristics to temperatures in excess of 150 degrees C.<>
{"title":"High speed semi-insulating GaInAsP laser processing","authors":"J. Wasserbauer, T. Fukushima, J. Bowers, S. Zehr, R. Haung","doi":"10.1109/ICIPRM.1990.203009","DOIUrl":"https://doi.org/10.1109/ICIPRM.1990.203009","url":null,"abstract":"Semi-insulating (SI) planar buried heterostructure (SIPBH) lasers, designed to minimize device parasitics, have been fabricated for high-speed operation. The I-V characteristics of the Fe-doped SI InP employed for the current blocking layers were examined at elevated temperatures associated with high speed laser operation. It was found that the trap filled voltage, V/sub TF/, decreases linearly with increasing temperature. However, a SI InP layer with a V/sub TF/ at room temperature of 70 V demonstrated current blocking characteristics to temperatures in excess of 150 degrees C.<<ETX>>","PeriodicalId":138960,"journal":{"name":"International Conference on Indium Phosphide and Related Materials","volume":"258 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115871883","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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