Improving the photodetection performance of thin-film transistor (TFT)-based UV photodetectors (UVPDs), using thick channel layers to promote photocurrent (Iph) or using thin channel layers to suppress dark current (Idark) is typically a trade-off. In this work, UVPDs based on oxygen-doped Si-Zn-Sn-O (SZTO) TFT with a stack of Pt/NiO capping layers (CLs) to release the trade-off between Idark and Iph are demonstrated. The Pt CL creates a wide depletion region in the channel layer to allow the use of thick channels, but still maintains low Idark, while the NiO CL forms a pn heterojunction to provide additional photogenerated carriers and enhance Iph under UV irradiation. Experimental results show that the proposed 95 nm-thick oxygen-doped SZTO TFT with a stack of Pt/NiO dual CLs exhibits an excellent photoresponsivity of 2026 A W−1 and photosensitivity of 9.3 × 107 A A−1, which are about 76× and 82.5× higher than a conventional 45 nm-thick SZTO TFT under 275 nm UV irradiation.
{"title":"Using thin-film transistor with thick oxygen-doped Si–Zn–Sn–O channel and patterned Pt/NiO capping layer to enhance ultraviolet light sensing performance","authors":"Rong-Ming Ko, Shui-Jinn Wang, Yu-Hao Chen, Chang-Yu Liao, Chien-Hung Wu","doi":"10.35848/1347-4065/ad0cdc","DOIUrl":"https://doi.org/10.35848/1347-4065/ad0cdc","url":null,"abstract":"Improving the photodetection performance of thin-film transistor (TFT)-based UV photodetectors (UVPDs), using thick channel layers to promote photocurrent (<italic toggle=\"yes\">I</italic>\u0000<sub>ph</sub>) or using thin channel layers to suppress dark current (<italic toggle=\"yes\">I</italic>\u0000<sub>dark</sub>) is typically a trade-off. In this work, UVPDs based on oxygen-doped Si-Zn-Sn-O (SZTO) TFT with a stack of Pt/NiO capping layers (CLs) to release the trade-off between <italic toggle=\"yes\">I</italic>\u0000<sub>dark</sub> and <italic toggle=\"yes\">I</italic>\u0000<sub>ph</sub> are demonstrated. The Pt CL creates a wide depletion region in the channel layer to allow the use of thick channels, but still maintains low <italic toggle=\"yes\">I</italic>\u0000<sub>dark</sub>, while the NiO CL forms a pn heterojunction to provide additional photogenerated carriers and enhance <italic toggle=\"yes\">I</italic>\u0000<sub>ph</sub> under UV irradiation. Experimental results show that the proposed 95 nm-thick oxygen-doped SZTO TFT with a stack of Pt/NiO dual CLs exhibits an excellent photoresponsivity of 2026 A W<sup>−1</sup> and photosensitivity of 9.3 × 10<sup>7</sup> A A<sup>−1</sup>, which are about 76× and 82.5× higher than a conventional 45 nm-thick SZTO TFT under 275 nm UV irradiation.","PeriodicalId":14741,"journal":{"name":"Japanese Journal of Applied Physics","volume":"22 1","pages":""},"PeriodicalIF":1.5,"publicationDate":"2024-01-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139096439","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-01-01DOI: 10.35848/1347-4065/ad16be
Akira Terazawa, Satoshi Yokotsuka, Hiroyuki Okada
A Mach–Zehnder interferometer with an optical phase control by a twisted nematic (TN) liquid crystal (LC) device was studied. In a typical TN LC device, a change in the optical rotation state of π/2 can be obtained by applying a voltage of about 5 V with a cell thickness of several-micron. The TN cell is inserted into one optical path in the Mach–Zehnder interferometer. We obtained a pattern change when voltage was applied to the LC cell due to the change of the optical interference state. As a result, a change in the number of photons under weak light conditions is observed.
{"title":"Quantum optical control experiment using Mach–Zehnder interferometer and twisted nematic liquid crystals","authors":"Akira Terazawa, Satoshi Yokotsuka, Hiroyuki Okada","doi":"10.35848/1347-4065/ad16be","DOIUrl":"https://doi.org/10.35848/1347-4065/ad16be","url":null,"abstract":"A Mach–Zehnder interferometer with an optical phase control by a twisted nematic (TN) liquid crystal (LC) device was studied. In a typical TN LC device, a change in the optical rotation state of π/2 can be obtained by applying a voltage of about 5 V with a cell thickness of several-micron. The TN cell is inserted into one optical path in the Mach–Zehnder interferometer. We obtained a pattern change when voltage was applied to the LC cell due to the change of the optical interference state. As a result, a change in the number of photons under weak light conditions is observed.","PeriodicalId":14741,"journal":{"name":"Japanese Journal of Applied Physics","volume":"36 10","pages":""},"PeriodicalIF":1.5,"publicationDate":"2024-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139454942","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-01-01DOI: 10.35848/1347-4065/ad14a7
Jaeuk Heo, Dong Eon Kim
X-ray free-electron lasers (XFELs) are powerful tools for characterizing and probing the properties of matter at atomic resolution on the ultrafast timescale. However, they have certain limitations such as spectral fluctuation and poor temporal coherence. Atomic X-ray lasers offer the narrow bandwidth, longitudinal coherence, and spectral stability that can overcome these limitations. In this paper, we study the interaction of inner-shell vacancy states with high-intensity XFEL pulses. We show that it is possible to achieve population inversion between K-shell and L-shell vacancy states in calcium and titanium when pumped by high-intensity XFEL pulses. These states can be used to generate atomic X-ray laser emission in the 3–5 keV photon energy range.
X 射线自由电子激光器（XFEL）是在超快时间尺度上以原子分辨率表征和探测物质特性的强大工具。然而，它们也有一定的局限性，如光谱波动和较差的时间相干性。原子 X 射线激光器具有窄带宽、纵向一致性和光谱稳定性，可以克服这些局限性。在本文中，我们研究了内壳空位态与高强度 XFEL 脉冲的相互作用。我们的研究表明，在高强度 XFEL 脉冲的泵浦作用下，钙和钛的 K 壳空位态和 L 壳空位态之间可以实现种群反转。这些状态可用于产生 3-5 keV 光子能量范围内的原子 X 射线激光发射。
{"title":"Study of population dynamics toward the development of atomic X-ray lasers in the 3–5 keV photon energies","authors":"Jaeuk Heo, Dong Eon Kim","doi":"10.35848/1347-4065/ad14a7","DOIUrl":"https://doi.org/10.35848/1347-4065/ad14a7","url":null,"abstract":"X-ray free-electron lasers (XFELs) are powerful tools for characterizing and probing the properties of matter at atomic resolution on the ultrafast timescale. However, they have certain limitations such as spectral fluctuation and poor temporal coherence. Atomic X-ray lasers offer the narrow bandwidth, longitudinal coherence, and spectral stability that can overcome these limitations. In this paper, we study the interaction of inner-shell vacancy states with high-intensity XFEL pulses. We show that it is possible to achieve population inversion between K-shell and L-shell vacancy states in calcium and titanium when pumped by high-intensity XFEL pulses. These states can be used to generate atomic X-ray laser emission in the 3–5 keV photon energy range.","PeriodicalId":14741,"journal":{"name":"Japanese Journal of Applied Physics","volume":"20 5","pages":""},"PeriodicalIF":1.5,"publicationDate":"2024-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139456860","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-01-01DOI: 10.35848/1347-4065/ad160c
Kazuhiro Tanaka, Masashi Kato
We investigate carrier recombination mechanisms in heavily aluminum (Al) doped p-type 4H-SiC, a material crucial for power devices. The recombination mechanisms in Al-doped p-type 4H-SiC have remained unclear, with reports suggesting various possibilities. To gain insights, we employ photoluminescence (PL) measurements, particularly time-resolved PL (TR-PL), as they are well-suited for studying carrier lifetimes in heavily Al-doped p-type 4H-SiC. We examine the temperature and excitation intensity dependencies of TR-PL and PL spectra and discuss the underlying recombination mechanisms. We observe that the dominant recombination mechanism varies with injection conditions for the samples with Al concentration less than 1019 cm−3. Under low injection conditions, recombination via the Al acceptor level appears dominant, exhibiting weak temperature dependence. However, under high injection conditions, Shockley–Read–Hall recombination takes precedence, leading to shorter carrier lifetimes with increasing temperature. This temperature dependence implies that presences of the deep recombination centers with the small capture barrier for holes.
{"title":"Carrier recombination in highly Al doped 4H-SiC: dependence on the injection conditions","authors":"Kazuhiro Tanaka, Masashi Kato","doi":"10.35848/1347-4065/ad160c","DOIUrl":"https://doi.org/10.35848/1347-4065/ad160c","url":null,"abstract":"We investigate carrier recombination mechanisms in heavily aluminum (Al) doped p-type 4H-SiC, a material crucial for power devices. The recombination mechanisms in Al-doped p-type 4H-SiC have remained unclear, with reports suggesting various possibilities. To gain insights, we employ photoluminescence (PL) measurements, particularly time-resolved PL (TR-PL), as they are well-suited for studying carrier lifetimes in heavily Al-doped p-type 4H-SiC. We examine the temperature and excitation intensity dependencies of TR-PL and PL spectra and discuss the underlying recombination mechanisms. We observe that the dominant recombination mechanism varies with injection conditions for the samples with Al concentration less than 1019 cm−3. Under low injection conditions, recombination via the Al acceptor level appears dominant, exhibiting weak temperature dependence. However, under high injection conditions, Shockley–Read–Hall recombination takes precedence, leading to shorter carrier lifetimes with increasing temperature. This temperature dependence implies that presences of the deep recombination centers with the small capture barrier for holes.","PeriodicalId":14741,"journal":{"name":"Japanese Journal of Applied Physics","volume":"54 1","pages":""},"PeriodicalIF":1.5,"publicationDate":"2024-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139454768","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-12-29DOI: 10.35848/1347-4065/ad0cde
Shyankay Jou, Muhammad Hawary Assa, Bohr-Ran Huang, Xin-Wei Huang
A cobalt sulfide (CoSx) film compromising CoS2 and Co9S8 nanograins was formed by sulfurizing the surface of a Co film to use for resistive switching (RS) memory. The work function and band gap of the CoSx film were measured to be 4.78 eV and 2.18 eV, respectively. The CoSx film was used as a resistive layer together with the Co film underneath as a bottom electrode, and a Ag or Cu film as the top electrode. Both Ag/CoSx/Co and Cu/CoSx/Co devices exhibited bipolar RS behavior with the capability of multi-level memory storage. The conduction of both devices in low resistive states was correlated with metallic filamentary paths following ohmic conduction, whereas Schottky emission originated at the Ag/CoSx and Cu/CoSx interfaces dominated in the high resistance state. The performance of Ag/CoSx/Co and Cu/CoSx/Co devices were compared and correlated with the properties of Ag and Cu electrodes.
通过对用于电阻开关（RS）存储器的钴薄膜表面进行硫化，形成了由 CoS2 和 Co9S8 纳米晶粒组成的硫化钴（CoSx）薄膜。经测量，CoSx 薄膜的功函数和带隙分别为 4.78 eV 和 2.18 eV。CoSx 薄膜用作电阻层，下面的 Co 薄膜用作底电极，Ag 或 Cu 薄膜用作顶电极。Ag/CoSx/Co 和 Cu/CoSx/Co 器件都表现出双极 RS 行为，具有多级存储能力。这两种器件在低电阻状态下的传导与欧姆传导后的金属丝路径有关，而在高电阻状态下，源自 Ag/CoSx 和 Cu/CoSx 接口的肖特基发射占主导地位。对 Ag/CoSx/Co 和 Cu/CoSx/Co 器件的性能进行了比较，并将其与 Ag 和 Cu 电极的特性联系起来。
{"title":"Cobalt sulfide films by sulfurizing cobalt for resistive switching memory","authors":"Shyankay Jou, Muhammad Hawary Assa, Bohr-Ran Huang, Xin-Wei Huang","doi":"10.35848/1347-4065/ad0cde","DOIUrl":"https://doi.org/10.35848/1347-4065/ad0cde","url":null,"abstract":"A cobalt sulfide (CoS<sub>\u0000<italic toggle=\"yes\">x</italic>\u0000</sub>) film compromising CoS<sub>2</sub> and Co<sub>9</sub>S<sub>8</sub> nanograins was formed by sulfurizing the surface of a Co film to use for resistive switching (RS) memory. The work function and band gap of the CoS<sub>\u0000<italic toggle=\"yes\">x</italic>\u0000</sub> film were measured to be 4.78 eV and 2.18 eV, respectively. The CoS<sub>\u0000<italic toggle=\"yes\">x</italic>\u0000</sub> film was used as a resistive layer together with the Co film underneath as a bottom electrode, and a Ag or Cu film as the top electrode. Both Ag/CoS<sub>\u0000<italic toggle=\"yes\">x</italic>\u0000</sub>/Co and Cu/CoS<sub>\u0000<italic toggle=\"yes\">x</italic>\u0000</sub>/Co devices exhibited bipolar RS behavior with the capability of multi-level memory storage. The conduction of both devices in low resistive states was correlated with metallic filamentary paths following ohmic conduction, whereas Schottky emission originated at the Ag/CoS<sub>\u0000<italic toggle=\"yes\">x</italic>\u0000</sub> and Cu/CoS<sub>\u0000<italic toggle=\"yes\">x</italic>\u0000</sub> interfaces dominated in the high resistance state. The performance of Ag/CoS<sub>\u0000<italic toggle=\"yes\">x</italic>\u0000</sub>/Co and Cu/CoS<sub>\u0000<italic toggle=\"yes\">x</italic>\u0000</sub>/Co devices were compared and correlated with the properties of Ag and Cu electrodes.","PeriodicalId":14741,"journal":{"name":"Japanese Journal of Applied Physics","volume":"8 1","pages":""},"PeriodicalIF":1.5,"publicationDate":"2023-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139096478","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-12-28DOI: 10.35848/1347-4065/ad193b
Keita Kuga, Md Mehdee Hasan Mahfuz, Takeo Matsuki, Takanobu Watanabe
The performance of a cavity-free micro thermoelectric generator (TEG) consists of Si nanowires (Si-NWs) has been investigated in this research. In the cavity free structure, one side of TEG is heated by the structure of metal overlayer, called Heat Guide (HG), to supply heat selectively to specific microregions within the device. Thus, heat energy flows in the perpendicular direction which forms steep temperature gradient in the NWs. However, the performance can be varied with the various thickness of HG. In this work, the impact of HG structure of an integrated TEG was experimentally demonstrated on the power generation performance. Higher metal HG thickness and thick interlayer dielectric (ILD) thickness exhibit higher power generation performance with the integrated device.
{"title":"Impact of heat guide structure on the power generation performance of integrated cavity-free micro thermoelectric generators","authors":"Keita Kuga, Md Mehdee Hasan Mahfuz, Takeo Matsuki, Takanobu Watanabe","doi":"10.35848/1347-4065/ad193b","DOIUrl":"https://doi.org/10.35848/1347-4065/ad193b","url":null,"abstract":"The performance of a cavity-free micro thermoelectric generator (TEG) consists of Si nanowires (Si-NWs) has been investigated in this research. In the cavity free structure, one side of TEG is heated by the structure of metal overlayer, called Heat Guide (HG), to supply heat selectively to specific microregions within the device. Thus, heat energy flows in the perpendicular direction which forms steep temperature gradient in the NWs. However, the performance can be varied with the various thickness of HG. In this work, the impact of HG structure of an integrated TEG was experimentally demonstrated on the power generation performance. Higher metal HG thickness and thick interlayer dielectric (ILD) thickness exhibit higher power generation performance with the integrated device.","PeriodicalId":14741,"journal":{"name":"Japanese Journal of Applied Physics","volume":"218 3","pages":""},"PeriodicalIF":1.5,"publicationDate":"2023-12-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139152935","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-12-28DOI: 10.35848/1347-4065/ad1938
Ryosuke Matsubara, Shuichiro Aida, Sota Fukushima, A. Kubono
Aromatic polyesters exhibit high thermal conductivity and large nonlinear optical effects by controlling the orientation of their main chains. Especially in recent years, with the development of flexible optical and electronic devices utilizing polymer thin films, out-of-plane orientation control in thin films on the order of several hundred nm is required. However, due to the rigidity of aromatic polyesters, it is difficult to control vertical orientation in thin film growth from melt or solution. In this study, we attempted to control the vertical orientation of aromatic polyester thin films from the vapor phase using a thermal chemical vapor deposition. From a single head-to-tail type monomer, aromatic polyester thin films with the most primitive structure, whose melting point exceeds 500°C, were successfully grown. Furthermore, it was found that the vertical orientation of the main chains was enhanced by substrate surface treatment.
{"title":"Preparation of vertically oriented aromatic polyester thin films by thermal chemical vapor deposition","authors":"Ryosuke Matsubara, Shuichiro Aida, Sota Fukushima, A. Kubono","doi":"10.35848/1347-4065/ad1938","DOIUrl":"https://doi.org/10.35848/1347-4065/ad1938","url":null,"abstract":"Aromatic polyesters exhibit high thermal conductivity and large nonlinear optical effects by controlling the orientation of their main chains. Especially in recent years, with the development of flexible optical and electronic devices utilizing polymer thin films, out-of-plane orientation control in thin films on the order of several hundred nm is required. However, due to the rigidity of aromatic polyesters, it is difficult to control vertical orientation in thin film growth from melt or solution. In this study, we attempted to control the vertical orientation of aromatic polyester thin films from the vapor phase using a thermal chemical vapor deposition. From a single head-to-tail type monomer, aromatic polyester thin films with the most primitive structure, whose melting point exceeds 500°C, were successfully grown. Furthermore, it was found that the vertical orientation of the main chains was enhanced by substrate surface treatment.","PeriodicalId":14741,"journal":{"name":"Japanese Journal of Applied Physics","volume":"203 5","pages":""},"PeriodicalIF":1.5,"publicationDate":"2023-12-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139153068","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-12-28DOI: 10.35848/1347-4065/ad0306
T. Nishiwaki, Z. Sun, D. Oka, T. Fukumura, T. Makino
We have observed a new optical transition in the photoreflectance spectra of indirect-gap BiOCl thin films, which were grown on SrTiO3 substrates. The position of this transition is close in energy to its bulk critical point (CP) energy. Moreover, these are significantly lower than a higher-lying direct-type CP from an energetic point of view. The spectral line shape analysis for our observed signal suggests the presence of an excitonic effect of this compound. We determined its dependence of the optical anomaly on temperature ranging from 80 K to RT. We adopted the Varshni model for this analysis. At last, we compared photonic properties of BiOCl with those of an element and binary semiconductors.
{"title":"Photoreflectance spectroscopy of BiOCl epitaxial thin films","authors":"T. Nishiwaki, Z. Sun, D. Oka, T. Fukumura, T. Makino","doi":"10.35848/1347-4065/ad0306","DOIUrl":"https://doi.org/10.35848/1347-4065/ad0306","url":null,"abstract":"We have observed a new optical transition in the photoreflectance spectra of indirect-gap BiOCl thin films, which were grown on SrTiO<sub>3</sub> substrates. The position of this transition is close in energy to its bulk critical point (CP) energy. Moreover, these are significantly lower than a higher-lying direct-type CP from an energetic point of view. The spectral line shape analysis for our observed signal suggests the presence of an excitonic effect of this compound. We determined its dependence of the optical anomaly on temperature ranging from 80 K to RT. We adopted the Varshni model for this analysis. At last, we compared photonic properties of BiOCl with those of an element and binary semiconductors.","PeriodicalId":14741,"journal":{"name":"Japanese Journal of Applied Physics","volume":"4 1","pages":""},"PeriodicalIF":1.5,"publicationDate":"2023-12-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139092160","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-12-28DOI: 10.35848/1347-4065/ad193a
Wenlou Yuan, A. Nagakubo, Oliver Wright, H. Ogi
We propose an ultrahigh-sensitivity biosensor based on a GHz surface-acoustic-wave nanopillar phononic crystal using a Fano resonance at the bandgap edge. By means of numerical simulations, we find that the asymmetric, sharp and controllable transmission dip at the bandgap edge of the phononic crystal arising from the Fano resonance, which is caused by mode coupling between a local nanopillar resonance and the surface acoustic waves, allows ultrasensitive detection of attached biomolecules. The effect of such mass loading is studied, showing an attogram detection limit, and a unique “on-off” triggering at the sub-femtogram level for each individual Au nanopillar. This study opens up frontiers for biosensing applications of phononic crystals and ultrahigh-frequency surface acoustic wave devices.
{"title":"GHz surface-wave phononic crystal biosensor using a Fano resonance at the bandgap edge","authors":"Wenlou Yuan, A. Nagakubo, Oliver Wright, H. Ogi","doi":"10.35848/1347-4065/ad193a","DOIUrl":"https://doi.org/10.35848/1347-4065/ad193a","url":null,"abstract":"We propose an ultrahigh-sensitivity biosensor based on a GHz surface-acoustic-wave nanopillar phononic crystal using a Fano resonance at the bandgap edge. By means of numerical simulations, we find that the asymmetric, sharp and controllable transmission dip at the bandgap edge of the phononic crystal arising from the Fano resonance, which is caused by mode coupling between a local nanopillar resonance and the surface acoustic waves, allows ultrasensitive detection of attached biomolecules. The effect of such mass loading is studied, showing an attogram detection limit, and a unique “on-off” triggering at the sub-femtogram level for each individual Au nanopillar. This study opens up frontiers for biosensing applications of phononic crystals and ultrahigh-frequency surface acoustic wave devices.","PeriodicalId":14741,"journal":{"name":"Japanese Journal of Applied Physics","volume":"242 6‐7","pages":""},"PeriodicalIF":1.5,"publicationDate":"2023-12-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139152744","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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