In this paper, the memory characteristics of In-Ga-Zn-O (IGZO)-channel ferroelectric FETs (FeFETs) with stackable vertical channel-all-around structure are investigated by technology computer-aided design (TCAD) simulation. The simulated drain current–gate voltage (IDS–VGS) curves of the IGZO FeFET show an on–off ratio of up to 107 and a memory window of 1.76 V, proving that ferroelectric hafnium oxide (FE-HfO2) is suitable for a 2T0C transistor. To solve the potential current-sharing problem of the 2T0C dynamic random access memory (DRAM) array, an advanced operation design methodology is proposed, which utilizes the bipolar polarization characteristics of FE-HfO2. This solution shows a remarkable current ratio between data “1” and data “0”, not only demonstrating the feasibility of the IGZO-based FeFET on 2T0C DRAM memory cells, but also providing an array design guideline for highly reliable 2T0C memory applications.
{"title":"A design methodology for highly reliable operation for 2T0C dynamic random access memory application based on IGZO channel-all-around ferroelectric field-effect transistors","authors":"Jing Liang, Peng Yuan, Yong Yu, Jinjuan Xiang, Zhengyong Zhu, Menglong Zhou, Feng Shao, Yanan Lu, Jin Dai, Sangdon Yi, Guilei Wang, Jing Zhang, Bryan Kang, Chao Zhao","doi":"10.35848/1347-4065/ad455b","DOIUrl":"https://doi.org/10.35848/1347-4065/ad455b","url":null,"abstract":"In this paper, the memory characteristics of In-Ga-Zn-O (IGZO)-channel ferroelectric FETs (FeFETs) with stackable vertical channel-all-around structure are investigated by technology computer-aided design (TCAD) simulation. The simulated drain current–gate voltage (<italic toggle=\"yes\">I</italic>\u0000<sub>DS</sub>–<italic toggle=\"yes\">V</italic>\u0000<sub>GS</sub>) curves of the IGZO FeFET show an on–off ratio of up to 10<sup>7</sup> and a memory window of 1.76 V, proving that ferroelectric hafnium oxide (FE-HfO<sub>2</sub>) is suitable for a 2T0C transistor. To solve the potential current-sharing problem of the 2T0C dynamic random access memory (DRAM) array, an advanced operation design methodology is proposed, which utilizes the bipolar polarization characteristics of FE-HfO<sub>2</sub>. This solution shows a remarkable current ratio between data “1” and data “0”, not only demonstrating the feasibility of the IGZO-based FeFET on 2T0C DRAM memory cells, but also providing an array design guideline for highly reliable 2T0C memory applications.","PeriodicalId":14741,"journal":{"name":"Japanese Journal of Applied Physics","volume":"196 1","pages":""},"PeriodicalIF":1.5,"publicationDate":"2024-06-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141517843","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Given their excellent superconducting properties, REBa2Cu3Oy (REBCO)-coated conductors (CCs) are anticipated to be utilized in a variety of magnet applications. To further increase the critical current density Jc of these materials to levels needed for commercial applications, this study employs reel-to-reel (RTR) pulsed laser deposition (PLD) to fabricate REBCO+BaHfO3 (BHO) CCs. PLD creates BHO nanorods, which serve as flux-pinning defects. The material is subjected to O2+ irradiation to introduce more defects. The irradiation-induced defects serve as flux-pinning centers to the REBCO+BHO-nanorod CCs, increasing Jc along the c axis and over a wide range of magnetic-field angles compared with conventional REBCO+BHO-nanorod CCs. Both nanorods and irradiation-induced defects are demonstrated to be effective pinning centers in this material.
{"title":"Role of defects in increasing the critical current density of reel-to-reel PLD (Eu,Er)Ba2Cu3Oy+BaHfO3-coated conductors","authors":"Takumi Suzuki, Keita Sakuma, Junya Ohta, Yuki Ogimoto, Ko Takahashi, Toshinori Ozaki, Akira Ibi, Teruo Izumi, Tetsuya Yamaki, Hiroyuki Okazaki, Shunya Yamamoto, Hiroshi Koshikawa, Tatsunori Okada, Satoshi Awaji and Masashi Miura","doi":"10.35848/1347-4065/ad45d0","DOIUrl":"https://doi.org/10.35848/1347-4065/ad45d0","url":null,"abstract":"Given their excellent superconducting properties, REBa2Cu3Oy (REBCO)-coated conductors (CCs) are anticipated to be utilized in a variety of magnet applications. To further increase the critical current density Jc of these materials to levels needed for commercial applications, this study employs reel-to-reel (RTR) pulsed laser deposition (PLD) to fabricate REBCO+BaHfO3 (BHO) CCs. PLD creates BHO nanorods, which serve as flux-pinning defects. The material is subjected to O2+ irradiation to introduce more defects. The irradiation-induced defects serve as flux-pinning centers to the REBCO+BHO-nanorod CCs, increasing Jc along the c axis and over a wide range of magnetic-field angles compared with conventional REBCO+BHO-nanorod CCs. Both nanorods and irradiation-induced defects are demonstrated to be effective pinning centers in this material.","PeriodicalId":14741,"journal":{"name":"Japanese Journal of Applied Physics","volume":"43 1","pages":""},"PeriodicalIF":1.5,"publicationDate":"2024-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141258658","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-06-04DOI: 10.35848/1347-4065/ad4891
Taiga Ishida and Hiroki Kishikawa
Optical fiber networks need to transmit various types of client data with different requirements of bandwidth, reach, latency, and capacity by interconnecting backbone, metro, and local access networks. Since the optimal modulation format usually differs, it should be efficiently converted at the intermediate node connecting different networks. Among the multilevel modulation format, 8-ary quadrature amplitude modulation (8QAM) is a candidate for terrestrial networks thanks to the good balance between spectral efficiency and transmission distance. In this paper, we propose modulation format conversion systems from binary phase shift keying (BPSK) to 8QAM using coherent interference in delay interferometer and its reverse conversion system using four-wave mixing in a single highly nonlinear fiber. Conversion performances are numerically evaluated based on bit error rate, constellation diagrams, 8QAM and BPSK propagation lengths, and parameters in electrical signal regeneration. As a result, error-free format conversion is achieved for both conversion systems.
{"title":"Modulation format conversion between BPSK and 8QAM signals using coherent interference and four-wave mixing","authors":"Taiga Ishida and Hiroki Kishikawa","doi":"10.35848/1347-4065/ad4891","DOIUrl":"https://doi.org/10.35848/1347-4065/ad4891","url":null,"abstract":"Optical fiber networks need to transmit various types of client data with different requirements of bandwidth, reach, latency, and capacity by interconnecting backbone, metro, and local access networks. Since the optimal modulation format usually differs, it should be efficiently converted at the intermediate node connecting different networks. Among the multilevel modulation format, 8-ary quadrature amplitude modulation (8QAM) is a candidate for terrestrial networks thanks to the good balance between spectral efficiency and transmission distance. In this paper, we propose modulation format conversion systems from binary phase shift keying (BPSK) to 8QAM using coherent interference in delay interferometer and its reverse conversion system using four-wave mixing in a single highly nonlinear fiber. Conversion performances are numerically evaluated based on bit error rate, constellation diagrams, 8QAM and BPSK propagation lengths, and parameters in electrical signal regeneration. As a result, error-free format conversion is achieved for both conversion systems.","PeriodicalId":14741,"journal":{"name":"Japanese Journal of Applied Physics","volume":"72 1","pages":""},"PeriodicalIF":1.5,"publicationDate":"2024-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141258502","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-06-04DOI: 10.35848/1347-4065/ad483c
Zhenrong Zhang, Huan Fei Wen, Liangjie Li, Bo Cao, Yanjie Liu, Hao Guo, Zhong hao Li, Zongmin Ma, Xin Li, Jun Tang and Jun Liu
The magnetic sensitivity of the ensemble NV centers is directly related to temperature. In this study, we systematically investigated the temperature dependence of photoluminescence properties and optical detection magnetic resonance in ensemble NV centers from 1.6 K to 300 K. The magnetic sensitivity of the ensemble NV centers increases with the temperature rising in the range of 1.6 K to 75 K due to changes in contrast and linewidth, reaching a minimum near 40 K. Furthermore, the decrease in sensitivity is attributed to laser intensity overload at low temperatures by studying the influence of laser power on contrast and linewidth. These results offer valuable insights into NV magnetic sensing applications.
集合 NV 中心的磁灵敏度与温度直接相关。在这项研究中，我们系统地研究了 1.6 K 至 300 K 范围内集合 NV 中心的光致发光特性和光探测磁共振的温度依赖性。在 1.6 K 至 75 K 范围内，由于对比度和线宽的变化，集合 NV 中心的磁灵敏度随着温度的升高而增加，在 40 K 附近达到最小值。此外，通过研究激光功率对对比度和线宽的影响，还发现灵敏度的降低是由于激光强度在低温下过载造成的。这些结果为近紫外磁感应应用提供了宝贵的见解。
{"title":"Temperature dependence of magnetic sensitivity in ensemble NV centers","authors":"Zhenrong Zhang, Huan Fei Wen, Liangjie Li, Bo Cao, Yanjie Liu, Hao Guo, Zhong hao Li, Zongmin Ma, Xin Li, Jun Tang and Jun Liu","doi":"10.35848/1347-4065/ad483c","DOIUrl":"https://doi.org/10.35848/1347-4065/ad483c","url":null,"abstract":"The magnetic sensitivity of the ensemble NV centers is directly related to temperature. In this study, we systematically investigated the temperature dependence of photoluminescence properties and optical detection magnetic resonance in ensemble NV centers from 1.6 K to 300 K. The magnetic sensitivity of the ensemble NV centers increases with the temperature rising in the range of 1.6 K to 75 K due to changes in contrast and linewidth, reaching a minimum near 40 K. Furthermore, the decrease in sensitivity is attributed to laser intensity overload at low temperatures by studying the influence of laser power on contrast and linewidth. These results offer valuable insights into NV magnetic sensing applications.","PeriodicalId":14741,"journal":{"name":"Japanese Journal of Applied Physics","volume":"24 1","pages":""},"PeriodicalIF":1.5,"publicationDate":"2024-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141258656","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-05-29DOI: 10.35848/1347-4065/ad41ae
Shota Otake, Yuta Yoshikawa, Hirotaka Sakaguchi, Takumi Kato, Daisuke Nakauchi, Noriaki Kawaguchi and Takayuki Yanagida
We have investigated the photoluminescence (PL), scintillation, and photostimulated-luminescence (PSL) properties of Yb-doped SrCl2 transparent ceramics. The samples were prepared using the spark plasma sintering method. Emission peaks in the PL, scintillation, and PSL spectra were observed at 380 and 405 nm due to the spin-allowed and spin-forbidden 4f135d1–4f14 transitions of Yb2+, respectively. The PL quantum yield (QY) value elevated with increasing Yb concentration at 0.05%–1.0%, and the 1.0% Yb-doped SrCl2 transparent ceramic indicated the highest QY value. This concentration dependence was similar for the scintillation and PSL intensities.
{"title":"Scintillation and photostimulated-luminescence properties of Yb-doped SrCl2 transparent ceramics","authors":"Shota Otake, Yuta Yoshikawa, Hirotaka Sakaguchi, Takumi Kato, Daisuke Nakauchi, Noriaki Kawaguchi and Takayuki Yanagida","doi":"10.35848/1347-4065/ad41ae","DOIUrl":"https://doi.org/10.35848/1347-4065/ad41ae","url":null,"abstract":"We have investigated the photoluminescence (PL), scintillation, and photostimulated-luminescence (PSL) properties of Yb-doped SrCl2 transparent ceramics. The samples were prepared using the spark plasma sintering method. Emission peaks in the PL, scintillation, and PSL spectra were observed at 380 and 405 nm due to the spin-allowed and spin-forbidden 4f135d1–4f14 transitions of Yb2+, respectively. The PL quantum yield (QY) value elevated with increasing Yb concentration at 0.05%–1.0%, and the 1.0% Yb-doped SrCl2 transparent ceramic indicated the highest QY value. This concentration dependence was similar for the scintillation and PSL intensities.","PeriodicalId":14741,"journal":{"name":"Japanese Journal of Applied Physics","volume":"18 1","pages":""},"PeriodicalIF":1.5,"publicationDate":"2024-05-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141189376","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-05-27DOI: 10.35848/1347-4065/ad45d2
Takeshi Fujiwara, Yukiko Shimizu and Juntaro Ishii
In this study, we address the challenge of calibrating radiation thermometers using blackbody furnaces that employ a metal melting/freezing plateau. Here, we first present the observation results utilizing X-rays, enabling us to monitor the entire temperature cycle, from heating to cooling, during the calibration process. Through this approach, we directly observe the emergence of voids within deteriorating metal cells, which may give insights into the underlying mechanisms occurring within enclosed graphite cells.
在这项研究中，我们解决了利用黑体炉校准辐射温度计的难题，黑体炉采用了金属熔化/冷冻高原。在此，我们首先介绍利用 X 射线进行观测的结果，这使我们能够在校准过程中监测从加热到冷却的整个温度周期。通过这种方法，我们可以直接观察到老化的金属电池内出现的空隙，这可能有助于深入了解封闭石墨电池内发生的潜在机制。
{"title":"Direct observation of plateau progression in fixed-point blackbodies via X-ray imaging","authors":"Takeshi Fujiwara, Yukiko Shimizu and Juntaro Ishii","doi":"10.35848/1347-4065/ad45d2","DOIUrl":"https://doi.org/10.35848/1347-4065/ad45d2","url":null,"abstract":"In this study, we address the challenge of calibrating radiation thermometers using blackbody furnaces that employ a metal melting/freezing plateau. Here, we first present the observation results utilizing X-rays, enabling us to monitor the entire temperature cycle, from heating to cooling, during the calibration process. Through this approach, we directly observe the emergence of voids within deteriorating metal cells, which may give insights into the underlying mechanisms occurring within enclosed graphite cells.","PeriodicalId":14741,"journal":{"name":"Japanese Journal of Applied Physics","volume":"66 1","pages":""},"PeriodicalIF":1.5,"publicationDate":"2024-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141172925","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-05-21DOI: 10.35848/1347-4065/ad455d
Yasuyuki Yokota
In recent years, electrochemical devices have become increasingly important, and atomic- and molecular-scale understanding of the electronic and ionic transfers and chemical reactions at the electrode/electrolyte interface is required. While electrochemical scanning tunneling microscopy (EC-STM) has long enabled atomic-resolution observations in real space, it is difficult to identify reaction products and evaluate their electronic states at the interface in the electrochemical environment because of various limitations imposed by the presence of electrolyte solutions in the measurement. In this perspective review, we present our recent progresses with in situ (EC-STM combined with near-field spectroscopy) and ex situ (precise measurements in ultrahigh vacuum after electrode emersion) experiments for elucidating the microscopic properties of the electrochemical interfaces. Current issues and future perspective of both techniques are also discussed in detail.
{"title":"In situ and ex situ approaches for molecular scale understanding of electrochemical interfaces","authors":"Yasuyuki Yokota","doi":"10.35848/1347-4065/ad455d","DOIUrl":"https://doi.org/10.35848/1347-4065/ad455d","url":null,"abstract":"In recent years, electrochemical devices have become increasingly important, and atomic- and molecular-scale understanding of the electronic and ionic transfers and chemical reactions at the electrode/electrolyte interface is required. While electrochemical scanning tunneling microscopy (EC-STM) has long enabled atomic-resolution observations in real space, it is difficult to identify reaction products and evaluate their electronic states at the interface in the electrochemical environment because of various limitations imposed by the presence of electrolyte solutions in the measurement. In this perspective review, we present our recent progresses with in situ (EC-STM combined with near-field spectroscopy) and ex situ (precise measurements in ultrahigh vacuum after electrode emersion) experiments for elucidating the microscopic properties of the electrochemical interfaces. Current issues and future perspective of both techniques are also discussed in detail.","PeriodicalId":14741,"journal":{"name":"Japanese Journal of Applied Physics","volume":"56 1","pages":""},"PeriodicalIF":1.5,"publicationDate":"2024-05-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141153715","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The discharge phase and time evolution of a 150 kHz high-power pulse burst discharge were observed. A vacuum chamber was constructed by connecting glass tubes on which a solenoid coil was wound. Burst pulses with a width of 1000 μs and a repetition rate of 10 Hz were applied to the solenoid coil. A high-speed video camera and an intensified CCD camera were used to record photographs of the discharges. Observation of the discharge phase using a high-speed camera showed that the discharge occurs at the time of 40 μs and propagates from the wall of the cylindrical reactor. Over time, the discharge pattern evolves, and a branched pattern appears. The number of the branches changes with time. The discharge blinks synchronize with the instantaneous power, which suggests that the discharge is generated and maintained by the electrostatic field generated by the sides of the coil. The propagation velocity calculated from downstream decreases with increasing pressure and increases with increasing power.
{"title":"Time-resolved observation of 150 kHz high-power pulse burst high-frequency discharge using a high-speed video camera and an intensified charge coupled device camera","authors":"Naohiro Takahashi, Hikaru Suenaga, Genta Ichii, Katsuyuki Takahashi, Seiji Mukaigawa and Koichi Takaki","doi":"10.35848/1347-4065/ad3d67","DOIUrl":"https://doi.org/10.35848/1347-4065/ad3d67","url":null,"abstract":"The discharge phase and time evolution of a 150 kHz high-power pulse burst discharge were observed. A vacuum chamber was constructed by connecting glass tubes on which a solenoid coil was wound. Burst pulses with a width of 1000 μs and a repetition rate of 10 Hz were applied to the solenoid coil. A high-speed video camera and an intensified CCD camera were used to record photographs of the discharges. Observation of the discharge phase using a high-speed camera showed that the discharge occurs at the time of 40 μs and propagates from the wall of the cylindrical reactor. Over time, the discharge pattern evolves, and a branched pattern appears. The number of the branches changes with time. The discharge blinks synchronize with the instantaneous power, which suggests that the discharge is generated and maintained by the electrostatic field generated by the sides of the coil. The propagation velocity calculated from downstream decreases with increasing pressure and increases with increasing power.","PeriodicalId":14741,"journal":{"name":"Japanese Journal of Applied Physics","volume":"132 1","pages":""},"PeriodicalIF":1.5,"publicationDate":"2024-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141061839","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-05-10DOI: 10.35848/1347-4065/ad3f5b
Koki Okuno, Naoki Okada, Kosuke Iwaide, Nobuhiko Ozaki
We investigated the growth of InAs quantum dots (QDs) in a dots-in-a-well (DWELL) from the perspective of the influence of In segregation from the InGaAs layers in the DWELL. Reflection high-energy electron diffraction (RHEED) measurements during the growth of the lower InGaAs layer indicated that In segregation increased with the In composition of the InGaAs layer. The estimated In segregation values were consistent with the decreases in the critical thickness for the QDs growth and the total volume variations of the grown QDs. These results illustrate that the segregated In from the lower InGaAs layer contributes to the QD growth in the DWELL, and their density increases. Furthermore, RHEED measurements during the growth of the upper InGaAs layer indicated the suppression of the deformation of embedded QDs , which could partially contribute to the longer emission wavelength of the QDs in the DWELL.
{"title":"In segregation influence on properties of InAs quantum dots in dots-in-a-well","authors":"Koki Okuno, Naoki Okada, Kosuke Iwaide, Nobuhiko Ozaki","doi":"10.35848/1347-4065/ad3f5b","DOIUrl":"https://doi.org/10.35848/1347-4065/ad3f5b","url":null,"abstract":"We investigated the growth of InAs quantum dots (QDs) in a dots-in-a-well (DWELL) from the perspective of the influence of In segregation from the InGaAs layers in the DWELL. Reflection high-energy electron diffraction (RHEED) measurements during the growth of the lower InGaAs layer indicated that In segregation increased with the In composition of the InGaAs layer. The estimated In segregation values were consistent with the decreases in the critical thickness for the QDs growth and the total volume variations of the grown QDs. These results illustrate that the segregated In from the lower InGaAs layer contributes to the QD growth in the DWELL, and their density increases. Furthermore, RHEED measurements during the growth of the upper InGaAs layer indicated the suppression of the deformation of embedded QDs , which could partially contribute to the longer emission wavelength of the QDs in the DWELL.","PeriodicalId":14741,"journal":{"name":"Japanese Journal of Applied Physics","volume":"209 1","pages":""},"PeriodicalIF":1.5,"publicationDate":"2024-05-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140930061","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-05-08DOI: 10.35848/1347-4065/ad3ab9
J. M. Park, M. Okuyama
Polycrystalline BiFeO3 thick films were prepared on Pt/TiO2/SiO2/Si substates by using magnetic field-assisted pulsed laser deposition. Columnar BiFeO3 thick films were successfully obtained with a thickness of 1.8 μm, owing to an oblique incoming flux and high deposition rate by the confinement of the plume under a magnetic field. In the columnar BiFeO3 thick films, a saturated P-E hysteresis loop was obtained at RT, and the remanent polarization (Pr) and coercive field (Ec) were 42 μC cm−2 and 380 kV cm−1, respectively. Also, the piezoelectric response measured by atomic force microscopy showed a butterfly-shaped curve, and the piezoelectric d33 coefficient was about 50 pm V−1.
{"title":"Characterization of columnar BiFeO3 thick films prepared by magnetic field-assisted pulsed laser deposition","authors":"J. M. Park, M. Okuyama","doi":"10.35848/1347-4065/ad3ab9","DOIUrl":"https://doi.org/10.35848/1347-4065/ad3ab9","url":null,"abstract":"Polycrystalline BiFeO<sub>3</sub> thick films were prepared on Pt/TiO<sub>2</sub>/SiO<sub>2</sub>/Si substates by using magnetic field-assisted pulsed laser deposition. Columnar BiFeO<sub>3</sub> thick films were successfully obtained with a thickness of 1.8 <italic toggle=\"yes\">μ</italic>m, owing to an oblique incoming flux and high deposition rate by the confinement of the plume under a magnetic field. In the columnar BiFeO<sub>3</sub> thick films, a saturated <italic toggle=\"yes\">P-E</italic> hysteresis loop was obtained at RT, and the remanent polarization (<italic toggle=\"yes\">P</italic>\u0000<sub>\u0000<italic toggle=\"yes\">r</italic>\u0000</sub>) and coercive field (<italic toggle=\"yes\">E</italic>\u0000<sub>\u0000<italic toggle=\"yes\">c</italic>\u0000</sub>) were 42 <italic toggle=\"yes\">μ</italic>C cm<sup>−2</sup> and 380 kV cm<sup>−1</sup>, respectively. Also, the piezoelectric response measured by atomic force microscopy showed a butterfly-shaped curve, and the piezoelectric <italic toggle=\"yes\">d</italic>\u0000<sub>33</sub> coefficient was about 50 pm V<sup>−1</sup>.","PeriodicalId":14741,"journal":{"name":"Japanese Journal of Applied Physics","volume":"64 1","pages":""},"PeriodicalIF":1.5,"publicationDate":"2024-05-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140930059","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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