Pub Date : 2023-12-27DOI: 10.35848/1347-4065/ad10ee
Takahiro Kozawa
The wavelength of a radiation exposure source has been reduced to improve the resolution of lithography in the semiconductor industry. The energy of photons reached the ionizing radiation region when using EUV radiation. Because the energy of EUV photons for lithography is 92.5 eV, the EUV photons can ionize all kinds of atom. In this study, the shielding effect of the underlayer against the secondary electrons generated in the substrates was investigated using the bridging risk as an indicator. Secondary electron dynamics was calculated by a Monte Carlo method assuming the resist-underlayer-substrate system. The physical properties of the underlayer were assumed to be the same as those of the resist layer. The secondary electrons generated in the substrate significantly affected the bridging risk when the underlayer thickness was smaller than approximately 5 nm. The resist process should be designed by considering the secondary electrons generated in the substrate.
{"title":"Shielding effect of underlayer against secondary electrons generated in substrate in extreme ultraviolet lithography","authors":"Takahiro Kozawa","doi":"10.35848/1347-4065/ad10ee","DOIUrl":"https://doi.org/10.35848/1347-4065/ad10ee","url":null,"abstract":"The wavelength of a radiation exposure source has been reduced to improve the resolution of lithography in the semiconductor industry. The energy of photons reached the ionizing radiation region when using EUV radiation. Because the energy of EUV photons for lithography is 92.5 eV, the EUV photons can ionize all kinds of atom. In this study, the shielding effect of the underlayer against the secondary electrons generated in the substrates was investigated using the bridging risk as an indicator. Secondary electron dynamics was calculated by a Monte Carlo method assuming the resist-underlayer-substrate system. The physical properties of the underlayer were assumed to be the same as those of the resist layer. The secondary electrons generated in the substrate significantly affected the bridging risk when the underlayer thickness was smaller than approximately 5 nm. The resist process should be designed by considering the secondary electrons generated in the substrate.","PeriodicalId":14741,"journal":{"name":"Japanese Journal of Applied Physics","volume":"88 1","pages":""},"PeriodicalIF":1.5,"publicationDate":"2023-12-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139056261","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-12-27DOI: 10.35848/1347-4065/ad0cd8
Yusei Kioka, Yuki Maekawa, Takahiro Yamamoto
Using a molecular dynamics simulation, we theoretically investigate the dielectric response of confined water intruded between graphene and a hexagonal boron nitride (h-BN) substrate. The dielectric constant of confined water with a thickness of 1 nm is only εr ∼ 2, which is much smaller than that of bulk water (εrbulk=72.89). As the thickness h increases, εr begins to increase as well when h exceeds a few nanometers and then approaches εrbulk. The results of rotational autocorrelation functions suggest that the dielectric constant of the confined water is small because of the limited rotational degrees of freedom of the water on the graphene and h-BN substrate surfaces. In addition, the saturation electric field of the confined water with h < 100 nm is much higher than the breakdown electric field of the h-BN substrate (0.7 V/nm).
{"title":"Molecular dynamics simulation on the dielectric properties of water confined in a nanospace between graphene and a h-BN substrate","authors":"Yusei Kioka, Yuki Maekawa, Takahiro Yamamoto","doi":"10.35848/1347-4065/ad0cd8","DOIUrl":"https://doi.org/10.35848/1347-4065/ad0cd8","url":null,"abstract":"Using a molecular dynamics simulation, we theoretically investigate the dielectric response of confined water intruded between graphene and a hexagonal boron nitride (h-BN) substrate. The dielectric constant of confined water with a thickness of 1 nm is only <italic toggle=\"yes\">ε</italic>\u0000<sub>r</sub> ∼ 2, which is much smaller than that of bulk water (<inline-formula>\u0000<tex-math>\u0000<?CDATA ${varepsilon }_{{rm{r}}}^{mathrm{bulk}}=72.89$?>\u0000</tex-math>\u0000<mml:math overflow=\"scroll\"><mml:msubsup><mml:mrow><mml:mi>ε</mml:mi></mml:mrow><mml:mrow><mml:mi mathvariant=\"normal\">r</mml:mi></mml:mrow><mml:mrow><mml:mi>bulk</mml:mi></mml:mrow></mml:msubsup><mml:mo>=</mml:mo><mml:mn>72.89</mml:mn></mml:math>\u0000<inline-graphic xlink:href=\"jjapad0cd8ieqn1.gif\" xlink:type=\"simple\"></inline-graphic>\u0000</inline-formula>). As the thickness <italic toggle=\"yes\">h</italic> increases, <italic toggle=\"yes\">ε</italic>\u0000<sub>r</sub> begins to increase as well when <italic toggle=\"yes\">h</italic> exceeds a few nanometers and then approaches <inline-formula>\u0000<tex-math>\u0000<?CDATA ${varepsilon }_{{rm{r}}}^{mathrm{bulk}}$?>\u0000</tex-math>\u0000<mml:math overflow=\"scroll\"><mml:msubsup><mml:mrow><mml:mi>ε</mml:mi></mml:mrow><mml:mrow><mml:mi mathvariant=\"normal\">r</mml:mi></mml:mrow><mml:mrow><mml:mi>bulk</mml:mi></mml:mrow></mml:msubsup></mml:math>\u0000<inline-graphic xlink:href=\"jjapad0cd8ieqn2.gif\" xlink:type=\"simple\"></inline-graphic>\u0000</inline-formula>. The results of rotational autocorrelation functions suggest that the dielectric constant of the confined water is small because of the limited rotational degrees of freedom of the water on the graphene and h-BN substrate surfaces. In addition, the saturation electric field of the confined water with <italic toggle=\"yes\">h</italic> < 100 nm is much higher than the breakdown electric field of the h-BN substrate (0.7 V/nm).","PeriodicalId":14741,"journal":{"name":"Japanese Journal of Applied Physics","volume":"29 1","pages":""},"PeriodicalIF":1.5,"publicationDate":"2023-12-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139056437","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-12-27DOI: 10.35848/1347-4065/ad0faa
Toshiyuki Kawaharamura, Misaki Nishi, Li Liu, Phimolphan Rutthongjan, Yuna Ishikawa, Masahito Sakamoto, Tatsuya Yasuoka, Kanta Asako, Tamako Ozaki, Miyabi Fukue, Mariko Ueda, Shota Sato, Giang T. Dang
In mist CVD, investigation of the dependence of the growth rate on the solution concentration and precursor supply amount in the growth of ZnO films using a methanol-based solution of Zn(acac)2 revealed that the reaction is a rate-determination process of the supply-limited regime. Based on this result, the diffusion coefficient of gasified Zn(acac)2 at standard ambient temperature and pressure (SATP) was calculated to be approximately 10−6m2/s, where the diffusion rate was derived from the relation between the precursor supply amount and the film formation amount, assuming that all precursors were gasified in the reactor. The derived values were approximately one order of magnitude lower than the typical diffusion coefficient of 10−5m2/s in the gas phase at SATP. Several factors considered were unable to explain the much lower diffusion coefficient. Therefore, this result contradicts the assumption that all precursors are gasified in the reactor, and it is presumed that droplets might remain in the liquid–gas phase.
{"title":"Growth mechanism under the supply-limited regime in mist chemical vapor deposition: presumption of mist droplet state in high-temperature field","authors":"Toshiyuki Kawaharamura, Misaki Nishi, Li Liu, Phimolphan Rutthongjan, Yuna Ishikawa, Masahito Sakamoto, Tatsuya Yasuoka, Kanta Asako, Tamako Ozaki, Miyabi Fukue, Mariko Ueda, Shota Sato, Giang T. Dang","doi":"10.35848/1347-4065/ad0faa","DOIUrl":"https://doi.org/10.35848/1347-4065/ad0faa","url":null,"abstract":"In mist CVD, investigation of the dependence of the growth rate on the solution concentration and precursor supply amount in the growth of ZnO films using a methanol-based solution of Zn(acac)<sub>2</sub> revealed that the reaction is a rate-determination process of the supply-limited regime. Based on this result, the diffusion coefficient of gasified Zn(acac)<sub>2</sub> at standard ambient temperature and pressure (SATP) was calculated to be approximately <inline-formula>\u0000<tex-math>\u0000<?CDATA ${10}^{-6},{{rm{m}}}^{2}/{rm{s}},$?>\u0000</tex-math>\u0000<mml:math overflow=\"scroll\"><mml:msup><mml:mn>10</mml:mn><mml:mrow><mml:mo>−</mml:mo><mml:mn>6</mml:mn></mml:mrow></mml:msup><mml:mspace width=\"1em\"></mml:mspace><mml:msup><mml:mi mathvariant=\"normal\">m</mml:mi><mml:mn>2</mml:mn></mml:msup><mml:mo>/</mml:mo><mml:mi mathvariant=\"normal\">s</mml:mi><mml:mo>,</mml:mo></mml:math>\u0000<inline-graphic xlink:href=\"jjapad0faaieqn1.gif\" xlink:type=\"simple\"></inline-graphic>\u0000</inline-formula> where the diffusion rate was derived from the relation between the precursor supply amount and the film formation amount, assuming that all precursors were gasified in the reactor. The derived values were approximately one order of magnitude lower than the typical diffusion coefficient of <inline-formula>\u0000<tex-math>\u0000<?CDATA ${10}^{-5},{{rm{m}}}^{2}/{rm{s}}$?>\u0000</tex-math>\u0000<mml:math overflow=\"scroll\"><mml:msup><mml:mrow><mml:mn>10</mml:mn></mml:mrow><mml:mrow><mml:mo>−</mml:mo><mml:mn>5</mml:mn></mml:mrow></mml:msup><mml:mspace width=\"1em\"></mml:mspace><mml:msup><mml:mrow><mml:mi mathvariant=\"normal\">m</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msup><mml:mo>/</mml:mo><mml:mi mathvariant=\"normal\">s</mml:mi></mml:math>\u0000<inline-graphic xlink:href=\"jjapad0faaieqn2.gif\" xlink:type=\"simple\"></inline-graphic>\u0000</inline-formula> in the gas phase at SATP. Several factors considered were unable to explain the much lower diffusion coefficient. Therefore, this result contradicts the assumption that all precursors are gasified in the reactor, and it is presumed that droplets might remain in the liquid–gas phase.","PeriodicalId":14741,"journal":{"name":"Japanese Journal of Applied Physics","volume":"1 1","pages":""},"PeriodicalIF":1.5,"publicationDate":"2023-12-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139056171","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-12-26DOI: 10.35848/1347-4065/ad1073
Jiaqi Luo, Qiang Zhou, Tao Jin
Thermoacoustic instability in solids paves the way for the development of solid-state thermoacoustic (SSTA) engines with superior reliability. Acoustic characteristics with respect to the performance of SSTA oscillators are investigated, where growth ratio is taken as a performance metric. Numerical analyses show that the acoustic characteristics not only determine the temperature gradient direction for strengthening the oscillation, but also affect the maximum growth ratio. A high growth ratio is obtained at a low angular frequency and an acoustic field around 1/8 wavelength from the strain antinode. To realize appropriate acoustic characteristics, the angular frequencies and acoustic fields under different boundary conditions are studied, based on which the method to adjust the acoustic characteristics is discussed. This work aims to reveal the relationship between the acoustic characteristics and the performance of SSTA oscillators, and to provide new insights on adjusting the acoustic characteristics for improving SSTA oscillators.
{"title":"Acoustic characteristics and performance analysis of a solid-state thermoacoustic oscillator","authors":"Jiaqi Luo, Qiang Zhou, Tao Jin","doi":"10.35848/1347-4065/ad1073","DOIUrl":"https://doi.org/10.35848/1347-4065/ad1073","url":null,"abstract":"Thermoacoustic instability in solids paves the way for the development of solid-state thermoacoustic (SSTA) engines with superior reliability. Acoustic characteristics with respect to the performance of SSTA oscillators are investigated, where growth ratio is taken as a performance metric. Numerical analyses show that the acoustic characteristics not only determine the temperature gradient direction for strengthening the oscillation, but also affect the maximum growth ratio. A high growth ratio is obtained at a low angular frequency and an acoustic field around 1/8 wavelength from the strain antinode. To realize appropriate acoustic characteristics, the angular frequencies and acoustic fields under different boundary conditions are studied, based on which the method to adjust the acoustic characteristics is discussed. This work aims to reveal the relationship between the acoustic characteristics and the performance of SSTA oscillators, and to provide new insights on adjusting the acoustic characteristics for improving SSTA oscillators.","PeriodicalId":14741,"journal":{"name":"Japanese Journal of Applied Physics","volume":"1 1","pages":""},"PeriodicalIF":1.5,"publicationDate":"2023-12-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139056364","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-12-26DOI: 10.35848/1347-4065/ad18ce
Tomoki Onabe, Zhendong Wu, T. Tohei, Yusuke Hayashi, K. Sumitani, Y. Imai, Shigeru Kimura, Takahiro Naito, Kohei Hamaya, Akira Sakai
This paper reports nanobeam X-ray diffraction (nanoXRD) measurement results for strained SiGe spintronics devices grown by molecular beam epitaxy. A quantitative nanoXRD analysis verifies that in-plane strain is properly exerted on the SiGe spin channel layer in the device showing enhanced spin diffusion length, whereas overall strain relaxation and local change in crystallinity occur in the sample with unclear spin signals. Crystal defects such as dislocations and stacking faults found in cross-sectional transmission electron microscopy observations are correlated with the results of nanoXRD analysis and their influence on spin transport properties are discussed. The present results demonstrate the capability of the nanoXRD based method for quantitative nondestructive analysis of strain distribution and crystallinity in real device structures.
{"title":"Local strain distribution analysis in strained SiGe spintronics devices","authors":"Tomoki Onabe, Zhendong Wu, T. Tohei, Yusuke Hayashi, K. Sumitani, Y. Imai, Shigeru Kimura, Takahiro Naito, Kohei Hamaya, Akira Sakai","doi":"10.35848/1347-4065/ad18ce","DOIUrl":"https://doi.org/10.35848/1347-4065/ad18ce","url":null,"abstract":"This paper reports nanobeam X-ray diffraction (nanoXRD) measurement results for strained SiGe spintronics devices grown by molecular beam epitaxy. A quantitative nanoXRD analysis verifies that in-plane strain is properly exerted on the SiGe spin channel layer in the device showing enhanced spin diffusion length, whereas overall strain relaxation and local change in crystallinity occur in the sample with unclear spin signals. Crystal defects such as dislocations and stacking faults found in cross-sectional transmission electron microscopy observations are correlated with the results of nanoXRD analysis and their influence on spin transport properties are discussed. The present results demonstrate the capability of the nanoXRD based method for quantitative nondestructive analysis of strain distribution and crystallinity in real device structures.","PeriodicalId":14741,"journal":{"name":"Japanese Journal of Applied Physics","volume":"27 12","pages":""},"PeriodicalIF":1.5,"publicationDate":"2023-12-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139156014","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-12-26DOI: 10.35848/1347-4065/ad18cd
YU-CHIEN Wei, C. Chu, Ming-Hua Mao, You-Ru Lin, Hao-Hsiung Lin
In this study, we demonstrated a new method of scanning photoluminescence microscopy (SPLM) to directly extract ambipolar diffusion length in a GaAs thin film. The photoluminescence intensity of the GaAs thin film was recorded while the excitation source scanned along a 400-nm-wide slit between the metal masks to avoid the influence of surface recombination and light scattering at the sample edge. The experimental SPLM profile showed a simple-exponential-decay functional form and was numerically verified. A fitted decay length of 723 nm was extracted, which represents ambipolar diffusion length of the GaAs thin film and agrees well with our previous study.
{"title":"A new method for direct extraction of ambipolar diffusion length in a thin film by scanning photoluminescence microscopy","authors":"YU-CHIEN Wei, C. Chu, Ming-Hua Mao, You-Ru Lin, Hao-Hsiung Lin","doi":"10.35848/1347-4065/ad18cd","DOIUrl":"https://doi.org/10.35848/1347-4065/ad18cd","url":null,"abstract":"In this study, we demonstrated a new method of scanning photoluminescence microscopy (SPLM) to directly extract ambipolar diffusion length in a GaAs thin film. The photoluminescence intensity of the GaAs thin film was recorded while the excitation source scanned along a 400-nm-wide slit between the metal masks to avoid the influence of surface recombination and light scattering at the sample edge. The experimental SPLM profile showed a simple-exponential-decay functional form and was numerically verified. A fitted decay length of 723 nm was extracted, which represents ambipolar diffusion length of the GaAs thin film and agrees well with our previous study.","PeriodicalId":14741,"journal":{"name":"Japanese Journal of Applied Physics","volume":"19 21","pages":""},"PeriodicalIF":1.5,"publicationDate":"2023-12-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139155349","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
There is a growing demand for physical reservoirs that operate with low power consumption and low computational cost. We have conducted researches on the basic properties of Ag2S reservoirs, which are a type of a physical reservoir. However, little research has been conducted on their applications. In this study, as a first step toward the practical application of Ag2S reservoirs, we implemented two types of rock-paper-scissors judgment systems using Ag2S reservoirs. In these experiments, we were able to demonstrate fast learning in the reservoir by comparing the results with methods using a single-layer perceptron (SLP) and a convolutional neural network (CNN). In addition we could obtain a maximum accuracy rate of about 98%.
{"title":"Implementation of rock-paper-scissors judgment systems with a Ag2S reservoir","authors":"Atsuhiro Mizuno, Yuki Ohno, Masaru Hayakawa, Kaiki Yoshimura, Tsuyoshi Hasegawa","doi":"10.35848/1347-4065/ad18cf","DOIUrl":"https://doi.org/10.35848/1347-4065/ad18cf","url":null,"abstract":"There is a growing demand for physical reservoirs that operate with low power consumption and low computational cost. We have conducted researches on the basic properties of Ag2S reservoirs, which are a type of a physical reservoir. However, little research has been conducted on their applications. In this study, as a first step toward the practical application of Ag2S reservoirs, we implemented two types of rock-paper-scissors judgment systems using Ag2S reservoirs. In these experiments, we were able to demonstrate fast learning in the reservoir by comparing the results with methods using a single-layer perceptron (SLP) and a convolutional neural network (CNN). In addition we could obtain a maximum accuracy rate of about 98%.","PeriodicalId":14741,"journal":{"name":"Japanese Journal of Applied Physics","volume":"25 30","pages":""},"PeriodicalIF":1.5,"publicationDate":"2023-12-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139156181","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-12-25DOI: 10.35848/1347-4065/ad1898
Haruto Saito, K. Makihara, Noriyuki Taoka, Seiichi Miyazaki
We have demonstrated formation of β-FeSi2 nanodots (NDs) with an areal density as high as ~1011 cm-2 on SiO2 by exposing Fe–NDs to SiH4 at 400oC and characterized their room–temperature light–emission properties. After the SiH4–exposure even at 1.0 Pa for 60 sec, stable photoluminescence (PL) signals, being characteristic of the semiconducting phase as β–FeSi2, were observed in the energy region from 0.7 to 0.85 eV. With an increase in the amount of SiH4 exposure from 60 to 600 Pa·sec, PL intensity increased by a factor of ~13. Note that, further increase in the amount of SiH4 over 600 Pa·sec, the PL intensity is weakened slightly. The observed decrease in the PL intensity is attributable to selective growth of Si onto the NDs after the formation of β–FeSi2 phase.
{"title":"Formation of β-FeSi2 NDs by SiH4-exposure to Fe-NDs","authors":"Haruto Saito, K. Makihara, Noriyuki Taoka, Seiichi Miyazaki","doi":"10.35848/1347-4065/ad1898","DOIUrl":"https://doi.org/10.35848/1347-4065/ad1898","url":null,"abstract":"We have demonstrated formation of β-FeSi2 nanodots (NDs) with an areal density as high as ~1011 cm-2 on SiO2 by exposing Fe–NDs to SiH4 at 400oC and characterized their room–temperature light–emission properties. After the SiH4–exposure even at 1.0 Pa for 60 sec, stable photoluminescence (PL) signals, being characteristic of the semiconducting phase as β–FeSi2, were observed in the energy region from 0.7 to 0.85 eV. With an increase in the amount of SiH4 exposure from 60 to 600 Pa·sec, PL intensity increased by a factor of ~13. Note that, further increase in the amount of SiH4 over 600 Pa·sec, the PL intensity is weakened slightly. The observed decrease in the PL intensity is attributable to selective growth of Si onto the NDs after the formation of β–FeSi2 phase.","PeriodicalId":14741,"journal":{"name":"Japanese Journal of Applied Physics","volume":"1 1","pages":""},"PeriodicalIF":1.5,"publicationDate":"2023-12-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139159064","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-12-25DOI: 10.35848/1347-4065/ad189c
Keisuke Utsumi, Hajime Tanaka, Nobuya Mori
A computational model to simulate the electron scattering by step-terrace structures is proposed. Using the proposed model, the transmission function, conductance, and mean free path are calculated. It is shown that the dependence of the mean free path on the perpendicular electric field, step position fluctuation, and step height is consistent with a surface roughness scattering theory based on the disordered periodicity of the step-terrace structures. It is suggested that the proposed model could be used to simulate the surface roughness scattering due to step-terrace structures in SiC MOS inversion layers.
本文提出了一个模拟阶梯梯形结构电子散射的计算模型。利用提出的模型，计算了传输函数、电导和平均自由路径。结果表明，平均自由路径对垂直电场、阶梯位置波动和阶梯高度的依赖性与基于阶梯-台阶结构无序周期性的表面粗糙度散射理论是一致的。建议使用所提出的模型模拟 SiC MOS 反转层中阶梯状台阶结构引起的表面粗糙度散射。
{"title":"Theoretical analysis of electron scattering by step-terrace structures at SiC metal-oxide-semiconductor interface","authors":"Keisuke Utsumi, Hajime Tanaka, Nobuya Mori","doi":"10.35848/1347-4065/ad189c","DOIUrl":"https://doi.org/10.35848/1347-4065/ad189c","url":null,"abstract":"A computational model to simulate the electron scattering by step-terrace structures is proposed. Using the proposed model, the transmission function, conductance, and mean free path are calculated. It is shown that the dependence of the mean free path on the perpendicular electric field, step position fluctuation, and step height is consistent with a surface roughness scattering theory based on the disordered periodicity of the step-terrace structures. It is suggested that the proposed model could be used to simulate the surface roughness scattering due to step-terrace structures in SiC MOS inversion layers.","PeriodicalId":14741,"journal":{"name":"Japanese Journal of Applied Physics","volume":"10 9","pages":""},"PeriodicalIF":1.5,"publicationDate":"2023-12-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139158199","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-12-25DOI: 10.35848/1347-4065/ad18a1
Junhyeong Lee, Min-Woo Kwon
The distance between memory and central processing unit (CPU) has led to a memory wall. To solve it, an in-memory technology that performs both memory and computation has been studied. To realize an ideal in-memory computing, we propose a positive feedback field effect transistor (FBFET) based on vertical NAND flash structure that can act as a memory and perform computation. The device can reconfigure the processing operations into AND or OR operations depending on the control gate bias. It performs memory by accumulating charge in the body, and logic operations can be performed by reading data stored in the charge trap layer. After this, it can also perform a writing operation. This component enables memory and read-compute-write operations, making it capable of implementing intrinsic in-memory computing. As a result, in this study, we designed and verified a structure that implements the core principles of in-memory computing.
内存与中央处理器（CPU）之间的距离导致了内存墙。为了解决这个问题，人们研究了一种既能存储又能计算的内存技术。为了实现理想的内存计算，我们提出了一种基于垂直 NAND 闪存结构的正反馈场效应晶体管 (FBFET)，它既能充当存储器，又能执行计算。该器件可根据控制栅极偏置将处理操作重新配置为 AND 或 OR 操作。它通过在本体中积累电荷来执行存储器，通过读取电荷阱层中存储的数据来执行逻辑运算。之后，它还可以执行写入操作。该元件可进行存储和读-算-写操作，因此能够实现固有的内存计算。因此，在本研究中，我们设计并验证了一种实现内存计算核心原理的结构。
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