Pub Date : 2009-12-01DOI: 10.1109/ELECTRO.2009.5441049
Ramapati Mishra, Laxmikant Singh, R. Ramakrishnan
In this paper application of micro-ring resonator as an amplifier is proposed by suitably doping the ring and confining the coupled wavelength to undergo required number of rounds. Amplification otherwise attained using long fiber waveguides can be obtained within a small structure of ring resonator.
{"title":"Optical micro-ring amplifier","authors":"Ramapati Mishra, Laxmikant Singh, R. Ramakrishnan","doi":"10.1109/ELECTRO.2009.5441049","DOIUrl":"https://doi.org/10.1109/ELECTRO.2009.5441049","url":null,"abstract":"In this paper application of micro-ring resonator as an amplifier is proposed by suitably doping the ring and confining the coupled wavelength to undergo required number of rounds. Amplification otherwise attained using long fiber waveguides can be obtained within a small structure of ring resonator.","PeriodicalId":149384,"journal":{"name":"2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2009-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126586348","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-12-01DOI: 10.1109/ELECTRO.2009.5441048
Sandeep K. Das, R. Prakash
A nanocomposite of functionalized 2.5 wt.% carboxylated multiwalled carbon nanotubes (MWCNTs) /polyaniline (PANi) is synthesized using in situ chemical polymerization method. MWCNT is coated by using in-situ chemical polymerization of Polyaniline polymer. Structure and morphology of nanocomposite is characterized, using X-ray diffraction pattern (XRD), scanning electron microscopy (SEM) and transmission electron microscopy (TEM), demonstrate that a thin layer of PANi (polyaniline) is well coated on the surface of MWCNT. Electrical properties were characterized using four probe conductivity measurement and electrochemical impedance spectroscopy. The conductivity of PANI-coated MWCNT increases by a factor of three orders due to the incorporation of PANi onto the pore surface of MWNT. The double layer capacitance is also calculated using impedance measurement.
{"title":"Electrical properties of multiwalled carbon nanotubes /polyaniline nanocomposite","authors":"Sandeep K. Das, R. Prakash","doi":"10.1109/ELECTRO.2009.5441048","DOIUrl":"https://doi.org/10.1109/ELECTRO.2009.5441048","url":null,"abstract":"A nanocomposite of functionalized 2.5 wt.% carboxylated multiwalled carbon nanotubes (MWCNTs) /polyaniline (PANi) is synthesized using in situ chemical polymerization method. MWCNT is coated by using in-situ chemical polymerization of Polyaniline polymer. Structure and morphology of nanocomposite is characterized, using X-ray diffraction pattern (XRD), scanning electron microscopy (SEM) and transmission electron microscopy (TEM), demonstrate that a thin layer of PANi (polyaniline) is well coated on the surface of MWCNT. Electrical properties were characterized using four probe conductivity measurement and electrochemical impedance spectroscopy. The conductivity of PANI-coated MWCNT increases by a factor of three orders due to the incorporation of PANi onto the pore surface of MWNT. The double layer capacitance is also calculated using impedance measurement.","PeriodicalId":149384,"journal":{"name":"2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2009-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132861106","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-12-01DOI: 10.1109/ELECTRO.2009.5441130
Amit Pal, Rajesh S. Kumar, V. Mohan, A. K. Tiwary
This paper describes the performance of Chebyshev band pass filter. In this paper Genetic Algorithm optimization technique is used to find out the coupling coefficient and mutual coupling coefficient. With this optimization, the performance will be improved.
{"title":"Design of Chebyshev band pass filter","authors":"Amit Pal, Rajesh S. Kumar, V. Mohan, A. K. Tiwary","doi":"10.1109/ELECTRO.2009.5441130","DOIUrl":"https://doi.org/10.1109/ELECTRO.2009.5441130","url":null,"abstract":"This paper describes the performance of Chebyshev band pass filter. In this paper Genetic Algorithm optimization technique is used to find out the coupling coefficient and mutual coupling coefficient. With this optimization, the performance will be improved.","PeriodicalId":149384,"journal":{"name":"2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2009-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133615851","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-12-01DOI: 10.1109/ELECTRO.2009.5441073
S. Saha
Astronomical observations are dependent on focal-plane instruments, and detectors continue to play a key role. The detector technology is evolving rather fast with the large-format CMOS and CCD array mosaics, electron-multiplying CCDs, electron-avalanche photodiode arrays, quantum-well IR photon detectors etc. However, the requirements of artifact-free photon shot noise limited images are the higher sensitivity, higher quantum efficiency, reduced noise that includes dark current, read-out and amplifier noise, smaller point-spread functions and higher spectral bandwidth, etc. One of the fastest growing applications is signal sensing, particularly wavefront sensing for adaptive optics and fringe tracking for interferometry. A few detectors that are being used in astronomical imaging are discussed in this talk.
{"title":"Detectors for the astronomical applications","authors":"S. Saha","doi":"10.1109/ELECTRO.2009.5441073","DOIUrl":"https://doi.org/10.1109/ELECTRO.2009.5441073","url":null,"abstract":"Astronomical observations are dependent on focal-plane instruments, and detectors continue to play a key role. The detector technology is evolving rather fast with the large-format CMOS and CCD array mosaics, electron-multiplying CCDs, electron-avalanche photodiode arrays, quantum-well IR photon detectors etc. However, the requirements of artifact-free photon shot noise limited images are the higher sensitivity, higher quantum efficiency, reduced noise that includes dark current, read-out and amplifier noise, smaller point-spread functions and higher spectral bandwidth, etc. One of the fastest growing applications is signal sensing, particularly wavefront sensing for adaptive optics and fringe tracking for interferometry. A few detectors that are being used in astronomical imaging are discussed in this talk.","PeriodicalId":149384,"journal":{"name":"2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2009-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133423567","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-12-01DOI: 10.1109/ELECTRO.2009.5441062
Yinglei Wang, Zhifeng Yan, Jingxuan Zhu, Xinnan Lin, F. He
The detector response characteristics of the field effect MOS transistor (MOSFET) to modulated terahertz radiation signal are studied in detail in this paper by a numerical simulation program developed from the basic hydrodynamic equations which govern the terahertz signal transport in the MOSFET and a universal MOSFET charge density equation which makes this program suitable in a wide range of operation region of MOSFET terahertz detector. The simulation results agree well with the existing theory which is only suitable in the nonresonant region. The developed numerical simulation program is also used to analyze the photoresponse characteristics of the MOSFET detector to modulated terahertz radiation in the resonant region, demonstrating potential application in the detector design and optimization from a MOSFET.
{"title":"Numerical study on field effect MOS transistor detection response to modulated terahertz radiation signal","authors":"Yinglei Wang, Zhifeng Yan, Jingxuan Zhu, Xinnan Lin, F. He","doi":"10.1109/ELECTRO.2009.5441062","DOIUrl":"https://doi.org/10.1109/ELECTRO.2009.5441062","url":null,"abstract":"The detector response characteristics of the field effect MOS transistor (MOSFET) to modulated terahertz radiation signal are studied in detail in this paper by a numerical simulation program developed from the basic hydrodynamic equations which govern the terahertz signal transport in the MOSFET and a universal MOSFET charge density equation which makes this program suitable in a wide range of operation region of MOSFET terahertz detector. The simulation results agree well with the existing theory which is only suitable in the nonresonant region. The developed numerical simulation program is also used to analyze the photoresponse characteristics of the MOSFET detector to modulated terahertz radiation in the resonant region, demonstrating potential application in the detector design and optimization from a MOSFET.","PeriodicalId":149384,"journal":{"name":"2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2009-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124285405","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-12-01DOI: 10.1109/ELECTRO.2009.5441115
Raj Kumar, P. Malathi
This paper presents CPW -fed Square Shaped fractal antenna. The Antenna has been designed on FR4 substrate εr =4.3 and thickness 1.53 mm. The antenna has been fabricated and tested using VNA. The experimental result exibihits dual bands i.e. from frequency 0.79 GHz – 2.24 GHz and from frequency 3.53 GHz to 12.29 GHz. This corresponds to 1.45 GHz and 8.76 GHz respectively. The lower end frequency of antenna is shifted to 0.79 GHz in comparison to simple convention coaxially feed microstrip patch resonant 1.44 GHz. This reveals the size reduction of fractal antenna. The experimental radiation pattern of this antenna has been observed nearly similar at all frequencies. This type of antenna can be useful for GPS, PCS, Vehicular radar and imaging system applications.
{"title":"Design of dual wide band CPW-fed fractal antenna","authors":"Raj Kumar, P. Malathi","doi":"10.1109/ELECTRO.2009.5441115","DOIUrl":"https://doi.org/10.1109/ELECTRO.2009.5441115","url":null,"abstract":"This paper presents CPW -fed Square Shaped fractal antenna. The Antenna has been designed on FR4 substrate εr =4.3 and thickness 1.53 mm. The antenna has been fabricated and tested using VNA. The experimental result exibihits dual bands i.e. from frequency 0.79 GHz – 2.24 GHz and from frequency 3.53 GHz to 12.29 GHz. This corresponds to 1.45 GHz and 8.76 GHz respectively. The lower end frequency of antenna is shifted to 0.79 GHz in comparison to simple convention coaxially feed microstrip patch resonant 1.44 GHz. This reveals the size reduction of fractal antenna. The experimental radiation pattern of this antenna has been observed nearly similar at all frequencies. This type of antenna can be useful for GPS, PCS, Vehicular radar and imaging system applications.","PeriodicalId":149384,"journal":{"name":"2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2009-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114765702","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-12-01DOI: 10.1109/ELECTRO.2009.5441145
A. Bazzazi, A. Nabavi
This paper presents the design of a 10GHz divider using Extended True Single Phase Clock (E-TSPC) logic on a 0.18µm CMOS technology with 1.8V supply voltage. This divider contains D-Flip flop with dynamic structure that is based on the ÷2 divider and ÷8/9 dual modulus prescaler. By optimizing the transistor size in each divider stage and inserting optimized buffers between the stages, the power and area are minimized. The results of post-layout simulation compared to similar reported ones illustrate significant improvement. The power consumption of ÷2 divider and ÷8/9 dual modulus prescaler are 320 µw and 850 µw, respectively. High speed low power and smaller area are properties of this design.
{"title":"Design of a low-power 10GHz frequency divider using Extended True Single Phase Clock (E-TSPC) logic","authors":"A. Bazzazi, A. Nabavi","doi":"10.1109/ELECTRO.2009.5441145","DOIUrl":"https://doi.org/10.1109/ELECTRO.2009.5441145","url":null,"abstract":"This paper presents the design of a 10GHz divider using Extended True Single Phase Clock (E-TSPC) logic on a 0.18µm CMOS technology with 1.8V supply voltage. This divider contains D-Flip flop with dynamic structure that is based on the ÷2 divider and ÷8/9 dual modulus prescaler. By optimizing the transistor size in each divider stage and inserting optimized buffers between the stages, the power and area are minimized. The results of post-layout simulation compared to similar reported ones illustrate significant improvement. The power consumption of ÷2 divider and ÷8/9 dual modulus prescaler are 320 µw and 850 µw, respectively. High speed low power and smaller area are properties of this design.","PeriodicalId":149384,"journal":{"name":"2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2009-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114921274","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-12-01DOI: 10.1109/ELECTRO.2009.5441146
B. Kumar, S.P. Singh, A. Mohan, A. Anand, H. Singh
Prior knowledge of wavelet coefficient statistics is a key issue in the development of better quantization strategy for enhancing compression efficiency of digital images. Since statistics of medical images are quite different from those of natural images, there is a need for statistical modelling of wavelet coefficients in different subbands. This paper examines the suitability of Student-t, Pareto Weibull and Gaussian distributions for modelling the wavelet coefficients of various subbands in a CT scan image to improve the compression efficiency. It has been found that the statistics of wavelet coefficients in the CT scan images can be better approximated by the generalized Student-t distribution for negative wavelet coefficients whereas generalized Pareto distribution provides better fit for the non-negative coefficients. The results can be potentially useful in designing adaptive quantizer for achieving improved compression gain and reducing computational complexity for medical image coders.
{"title":"Statistical modelling of wavelet coefficients of CT scan image","authors":"B. Kumar, S.P. Singh, A. Mohan, A. Anand, H. Singh","doi":"10.1109/ELECTRO.2009.5441146","DOIUrl":"https://doi.org/10.1109/ELECTRO.2009.5441146","url":null,"abstract":"Prior knowledge of wavelet coefficient statistics is a key issue in the development of better quantization strategy for enhancing compression efficiency of digital images. Since statistics of medical images are quite different from those of natural images, there is a need for statistical modelling of wavelet coefficients in different subbands. This paper examines the suitability of Student-t, Pareto Weibull and Gaussian distributions for modelling the wavelet coefficients of various subbands in a CT scan image to improve the compression efficiency. It has been found that the statistics of wavelet coefficients in the CT scan images can be better approximated by the generalized Student-t distribution for negative wavelet coefficients whereas generalized Pareto distribution provides better fit for the non-negative coefficients. The results can be potentially useful in designing adaptive quantizer for achieving improved compression gain and reducing computational complexity for medical image coders.","PeriodicalId":149384,"journal":{"name":"2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2009-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116384213","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-12-01DOI: 10.1109/ELECTRO.2009.5441098
J. Sharma, Dhirendra Kumar, A. De
In this paper, the investigations of the rectangular dielectric waveguides with embedded metallic discontinuities in millimeter waves (70–130 GHz) region have been presented. The full wave simulation of the structure has been carried out using frequency division time domain method. The frequency response of the structure shows that it can be used in designing of a dielectric filter in the given frequency range. The graphical representations of scattering parameters have been given for different values of the height of the dielectric rod and for the changes in the permittivity of the rod.
{"title":"Transmission characteristics of rectangular dielectric guide in the millimeter wave region with embedded metallic discontinuities","authors":"J. Sharma, Dhirendra Kumar, A. De","doi":"10.1109/ELECTRO.2009.5441098","DOIUrl":"https://doi.org/10.1109/ELECTRO.2009.5441098","url":null,"abstract":"In this paper, the investigations of the rectangular dielectric waveguides with embedded metallic discontinuities in millimeter waves (70–130 GHz) region have been presented. The full wave simulation of the structure has been carried out using frequency division time domain method. The frequency response of the structure shows that it can be used in designing of a dielectric filter in the given frequency range. The graphical representations of scattering parameters have been given for different values of the height of the dielectric rod and for the changes in the permittivity of the rod.","PeriodicalId":149384,"journal":{"name":"2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2009-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121948475","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-12-01DOI: 10.1109/ELECTRO.2009.5441181
Srirupa Goswami, A. Biswas
The influence of strain on the gate leakage current has been investigated analytically in detail for strained-Si channel MOSFETs for a range of gate voltages and the gate insulator thicknesses. Our analysis relies on the determination of surface potential by solving the Poisson's equation using both the analytical and numerical approaches. The analytical model for the gate leakage current density has been proposed by considering strain dependent material and transport parameters and also band parameters. The different components of the gate leakage current densities such as the Fowler-Nordheim (F-N) and direct leakage current densities along with their sub components have been determined analytically for a wide range of strain values. Further the validity of our model has been confirmed by comparing our theoretical results for the gate leakage current density with the reported experimental data.
{"title":"Modeling and numerical simulation of gate leakage current in strained-Si channel nMOSFETs with highk gate dielectrics","authors":"Srirupa Goswami, A. Biswas","doi":"10.1109/ELECTRO.2009.5441181","DOIUrl":"https://doi.org/10.1109/ELECTRO.2009.5441181","url":null,"abstract":"The influence of strain on the gate leakage current has been investigated analytically in detail for strained-Si channel MOSFETs for a range of gate voltages and the gate insulator thicknesses. Our analysis relies on the determination of surface potential by solving the Poisson's equation using both the analytical and numerical approaches. The analytical model for the gate leakage current density has been proposed by considering strain dependent material and transport parameters and also band parameters. The different components of the gate leakage current densities such as the Fowler-Nordheim (F-N) and direct leakage current densities along with their sub components have been determined analytically for a wide range of strain values. Further the validity of our model has been confirmed by comparing our theoretical results for the gate leakage current density with the reported experimental data.","PeriodicalId":149384,"journal":{"name":"2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2009-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127190529","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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