Pub Date : 2009-12-01DOI: 10.1109/ELECTRO.2009.5441152
G. Bevilacqua, G. Parravicini
Within the Keldysh formalism, we consider electron transport through single-level quantum dots, and revisit the proper self-energy diagram up to quadratic terms in the Coulomb interaction. Convolutions of Green's functions in real energy domain are analyzed in terms of retarded and advanced, lesser and greater, time-ordered and anti-time-ordered components. By virtue of the multipole expansion of the Fermi functions and other elaborations, we provide elegant and fully analytic expressions for the various components of the bubble diagram, with promise of deeper insight on the many-body effects in biased devices.
{"title":"Electronic interactions in quantum dots within the Keldsyh formalism","authors":"G. Bevilacqua, G. Parravicini","doi":"10.1109/ELECTRO.2009.5441152","DOIUrl":"https://doi.org/10.1109/ELECTRO.2009.5441152","url":null,"abstract":"Within the Keldysh formalism, we consider electron transport through single-level quantum dots, and revisit the proper self-energy diagram up to quadratic terms in the Coulomb interaction. Convolutions of Green's functions in real energy domain are analyzed in terms of retarded and advanced, lesser and greater, time-ordered and anti-time-ordered components. By virtue of the multipole expansion of the Fermi functions and other elaborations, we provide elegant and fully analytic expressions for the various components of the bubble diagram, with promise of deeper insight on the many-body effects in biased devices.","PeriodicalId":149384,"journal":{"name":"2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2009-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121294432","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-12-01DOI: 10.1109/ELECTRO.2009.5441128
Abhishek Datta, R. Chowdhury, Sudip Dogra, S. Sarkar
Orthogonal Frequency Division Multiplexing (OFDM) has become very popular for its advantages. The researches are till going on for the development of OFDM. In this paper we have described a new simulator that can perform the BER analysis using OFDM technology and generate respective plots for bit errors vs signal energy (Eb/No) for several modulation schemes & different noise effects in three types of channels (namely AWGN, Rayleigh and Rician).
{"title":"Design and implementation of a simulator for the analysis of bit error rates by using orthogonal Frequency Division Multiplexing","authors":"Abhishek Datta, R. Chowdhury, Sudip Dogra, S. Sarkar","doi":"10.1109/ELECTRO.2009.5441128","DOIUrl":"https://doi.org/10.1109/ELECTRO.2009.5441128","url":null,"abstract":"Orthogonal Frequency Division Multiplexing (OFDM) has become very popular for its advantages. The researches are till going on for the development of OFDM. In this paper we have described a new simulator that can perform the BER analysis using OFDM technology and generate respective plots for bit errors vs signal energy (Eb/No) for several modulation schemes & different noise effects in three types of channels (namely AWGN, Rayleigh and Rician).","PeriodicalId":149384,"journal":{"name":"2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2009-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126794650","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-12-01DOI: 10.1109/ELECTRO.2009.5441068
V. Ganesh, Subra Suresh, S. Sudhakar, T. Premkumar, K. Baskar
A simple method to synthesize Gallium Nitride (GaN) powder using gallium trichloride (GaCl3) and ethylene diamine tetra acetic acid (EDTA) as starting materials has been discussed in this article. GaN nanocrystals were synthesized by nitradation of Gallium-EDTA complex at different temperatures of 600 °C, 700 °C, 800 °C and 900 °C in ammonia (NH3) atmosphere. X-ray diffraction analysis revealed the formation of single phase hexagonal GaN for the compound synthesized at temperature of 900 °C. However the other low temperature synthesis resulted mixed phases of β-Ga2O3, 2GaONO3.N2O5 and GaN. Scanning electron microscopy images show that the particles were in the form of agglomerates. The average size of the particle was found to be ∼20 nm by transmission electron microscopy. Energy Dispersive X-ray diffraction analysis shows variation in elemental composition of synthesized compound with respect to temperature. The room temperature photoluminescence exhibits band-edge emission of GaN at 3.46 eV.
{"title":"Synthesis and characterization of Gallium Nitride nanocrystals","authors":"V. Ganesh, Subra Suresh, S. Sudhakar, T. Premkumar, K. Baskar","doi":"10.1109/ELECTRO.2009.5441068","DOIUrl":"https://doi.org/10.1109/ELECTRO.2009.5441068","url":null,"abstract":"A simple method to synthesize Gallium Nitride (GaN) powder using gallium trichloride (GaCl<inf>3</inf>) and ethylene diamine tetra acetic acid (EDTA) as starting materials has been discussed in this article. GaN nanocrystals were synthesized by nitradation of Gallium-EDTA complex at different temperatures of 600 °C, 700 °C, 800 °C and 900 °C in ammonia (NH<inf>3</inf>) atmosphere. X-ray diffraction analysis revealed the formation of single phase hexagonal GaN for the compound synthesized at temperature of 900 °C. However the other low temperature synthesis resulted mixed phases of β-Ga<inf>2</inf>O<inf>3</inf>, 2GaONO<inf>3</inf>.N<inf>2</inf>O<inf>5</inf> and GaN. Scanning electron microscopy images show that the particles were in the form of agglomerates. The average size of the particle was found to be ∼20 nm by transmission electron microscopy. Energy Dispersive X-ray diffraction analysis shows variation in elemental composition of synthesized compound with respect to temperature. The room temperature photoluminescence exhibits band-edge emission of GaN at 3.46 eV.","PeriodicalId":149384,"journal":{"name":"2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2009-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127255774","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-12-01DOI: 10.1109/ELECTRO.2009.5441036
S. K. Tripathy, M. Hota
In this paper we report the possibility of optical bistable switching in a hybrid magnetic semiconductor. We on the basis of our formulation found that a magnetic semiconductor can be made to behave as a optical bistable switch by suitably controlling the magnetic impurity concentration.
{"title":"Optical bistable switching in a hybrid magnetic semiconductor","authors":"S. K. Tripathy, M. Hota","doi":"10.1109/ELECTRO.2009.5441036","DOIUrl":"https://doi.org/10.1109/ELECTRO.2009.5441036","url":null,"abstract":"In this paper we report the possibility of optical bistable switching in a hybrid magnetic semiconductor. We on the basis of our formulation found that a magnetic semiconductor can be made to behave as a optical bistable switch by suitably controlling the magnetic impurity concentration.","PeriodicalId":149384,"journal":{"name":"2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2009-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125701701","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-12-01DOI: 10.1109/ELECTRO.2009.5441080
V. Srivastava, D. Kumar, R. Sharma
Helical slow wave structure (SWS) for Ku-band 140W short length space TWT has been designed in a single section to achieve the desired saturated RF output power 140W, gain 25dB and electronic efficiency more than 28% over the frequency band of 10.9 to 11.7GHz. This short-length TWT has been designed for a microwave power module (MPM). In-house developed one-dimensional large signal model (SUNRAY-1D) and 2.5-dimensional large signal model (SUNRAY-2.5D) along with the commercial code CST-MWS have been used for the design of helix SWS assembly. Dependency of helix tape and APBN support rod dimensions on the SWS dispersion and impedance characteristics over the desired frequency band of 10.9 to 11.7 GHz has also been analyzed.
{"title":"Design of SWS for a Ku-band 140W short-length TWT","authors":"V. Srivastava, D. Kumar, R. Sharma","doi":"10.1109/ELECTRO.2009.5441080","DOIUrl":"https://doi.org/10.1109/ELECTRO.2009.5441080","url":null,"abstract":"Helical slow wave structure (SWS) for Ku-band 140W short length space TWT has been designed in a single section to achieve the desired saturated RF output power 140W, gain 25dB and electronic efficiency more than 28% over the frequency band of 10.9 to 11.7GHz. This short-length TWT has been designed for a microwave power module (MPM). In-house developed one-dimensional large signal model (SUNRAY-1D) and 2.5-dimensional large signal model (SUNRAY-2.5D) along with the commercial code CST-MWS have been used for the design of helix SWS assembly. Dependency of helix tape and APBN support rod dimensions on the SWS dispersion and impedance characteristics over the desired frequency band of 10.9 to 11.7 GHz has also been analyzed.","PeriodicalId":149384,"journal":{"name":"2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2009-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125716314","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-12-01DOI: 10.1109/ELECTRO.2009.5441119
M. Rai, Chhavi Sharma
Cellular systems are generally encountered with near-far problem. Several power control updating algorithms have been proposed to deal with this problem. One of the commonly used algorithms is proposed by Zander that drives all the mobiles to achieve the system threshold signal to interference ratio (SIR), that is necessary for a mobile to get the access of base station. This algorithm deals with the link gain matrix associated with the system. Removal policy is applied which removes a mobile from the network if it fails achieve threshold value after being given several trials. The system is rebalanced by changing the link gain matrix. This increases the capacity as new incoming users can be served by the system. In this paper, a new power updating algorithm for cellular system is proposed and simulated to show that mobiles converges faster in terms of number of iterations required to get system threshold.
{"title":"Improvement in power updating algorithm in wireless DS-CDMA networks","authors":"M. Rai, Chhavi Sharma","doi":"10.1109/ELECTRO.2009.5441119","DOIUrl":"https://doi.org/10.1109/ELECTRO.2009.5441119","url":null,"abstract":"Cellular systems are generally encountered with near-far problem. Several power control updating algorithms have been proposed to deal with this problem. One of the commonly used algorithms is proposed by Zander that drives all the mobiles to achieve the system threshold signal to interference ratio (SIR), that is necessary for a mobile to get the access of base station. This algorithm deals with the link gain matrix associated with the system. Removal policy is applied which removes a mobile from the network if it fails achieve threshold value after being given several trials. The system is rebalanced by changing the link gain matrix. This increases the capacity as new incoming users can be served by the system. In this paper, a new power updating algorithm for cellular system is proposed and simulated to show that mobiles converges faster in terms of number of iterations required to get system threshold.","PeriodicalId":149384,"journal":{"name":"2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2009-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132841177","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-12-01DOI: 10.1109/ELECTRO.2009.5441097
Pratibha Sekra, D. Bhatnagar, V. K. Saxena, J. S. Saini
The radiation performance of a modified single feed circularly polarized elliptical patch microstrip antenna is simulated on glass epoxy FR-4 substrate by applying IE3D simulation software and its performance is compared with that of a conventional elliptical patch antenna. Both edges of geometry parallel to its major axis are truncated and antenna is fed at a point lying on the line making an angle of 45° from the minor axis. The location of feed point on this line and width of truncated parts are optimized to obtain improved circular polarization performance with this structure. The simulated return loss, input impedance, axial ratio variations with frequency for the proposed antenna are reported in this communication. The E and H plane LHCP and RHCP radiation patterns are also presented. It is realized that the impedance bandwidth and axial ratio bandwidth of modified antenna are improved on proposed truncations in the edge.
{"title":"Single feed circularly polarized edge truncated elliptical microstrip antenna","authors":"Pratibha Sekra, D. Bhatnagar, V. K. Saxena, J. S. Saini","doi":"10.1109/ELECTRO.2009.5441097","DOIUrl":"https://doi.org/10.1109/ELECTRO.2009.5441097","url":null,"abstract":"The radiation performance of a modified single feed circularly polarized elliptical patch microstrip antenna is simulated on glass epoxy FR-4 substrate by applying IE3D simulation software and its performance is compared with that of a conventional elliptical patch antenna. Both edges of geometry parallel to its major axis are truncated and antenna is fed at a point lying on the line making an angle of 45° from the minor axis. The location of feed point on this line and width of truncated parts are optimized to obtain improved circular polarization performance with this structure. The simulated return loss, input impedance, axial ratio variations with frequency for the proposed antenna are reported in this communication. The E and H plane LHCP and RHCP radiation patterns are also presented. It is realized that the impedance bandwidth and axial ratio bandwidth of modified antenna are improved on proposed truncations in the edge.","PeriodicalId":149384,"journal":{"name":"2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2009-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134002046","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-12-01DOI: 10.1109/ELECTRO.2009.5441179
A. Biswas, Moumita Basak Nath
In this paper, analytical models for threshold voltage Vt and subthreshold slope S for biaxially strained-Si channel nMOSFETs are proposed. Analytical approaches for predicting Vt and S are developed by considering the effect of strain on material and transport parameters, the effect of bandgap narrowing due to heavy channel doping, poly depletion effects and quantum mechanical effects for a wide temperature range 77 to 550 K. Accuracy of models have been verified by comparing analytical results obtained from the proposed model with the reported experimental data. Moreover, the model provides a physical insight for the variation of Vt and S for strained Si/ SiGe MOSFETs over a large temperature range.
{"title":"Influence of temperature on the threshold voltage and subthreshold slope of strained-Si/SiGe MOSFETs with polysilicon gates","authors":"A. Biswas, Moumita Basak Nath","doi":"10.1109/ELECTRO.2009.5441179","DOIUrl":"https://doi.org/10.1109/ELECTRO.2009.5441179","url":null,"abstract":"In this paper, analytical models for threshold voltage Vt and subthreshold slope S for biaxially strained-Si channel nMOSFETs are proposed. Analytical approaches for predicting Vt and S are developed by considering the effect of strain on material and transport parameters, the effect of bandgap narrowing due to heavy channel doping, poly depletion effects and quantum mechanical effects for a wide temperature range 77 to 550 K. Accuracy of models have been verified by comparing analytical results obtained from the proposed model with the reported experimental data. Moreover, the model provides a physical insight for the variation of Vt and S for strained Si/ SiGe MOSFETs over a large temperature range.","PeriodicalId":149384,"journal":{"name":"2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2009-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134153027","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-12-01DOI: 10.1109/ELECTRO.2009.5441156
Pratiksha Gehlot, S. Chouhan
A new chip design paradigm Network on Chip (NOC), proposed by many research groups [1], [2] is an important architectural choice for future SOCs. Various proposed Network on Chip (NoC) architecture attempts to address different component level architectures with specific interconnection network topologies and routing techniques, some of the topologies are CLICHE, Folded Torus, BFT, SPIN and Octagon. This research work compares proposed NoC architectures and to evaluate their performance using a simulating tool NS-2. Simulation provides relationship among latency, throughput and packet drop probability for NoC architectures.
{"title":"Performance evaluation of Network on Chip architectures","authors":"Pratiksha Gehlot, S. Chouhan","doi":"10.1109/ELECTRO.2009.5441156","DOIUrl":"https://doi.org/10.1109/ELECTRO.2009.5441156","url":null,"abstract":"A new chip design paradigm Network on Chip (NOC), proposed by many research groups [1], [2] is an important architectural choice for future SOCs. Various proposed Network on Chip (NoC) architecture attempts to address different component level architectures with specific interconnection network topologies and routing techniques, some of the topologies are CLICHE, Folded Torus, BFT, SPIN and Octagon. This research work compares proposed NoC architectures and to evaluate their performance using a simulating tool NS-2. Simulation provides relationship among latency, throughput and packet drop probability for NoC architectures.","PeriodicalId":149384,"journal":{"name":"2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2009-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133164556","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-12-01DOI: 10.1109/ELECTRO.2009.5441067
R. Shukla, A. Srivastava, K. Dubey, Nishant Kumar
Preliminary investigations of dielectric constant, loss tangent and electrical conductivity of zinc oxide pellets have been done at 50°C for signal frequency varying from 1 kHz to 5MHz. The dielectric constant and dielectric loss tangent both decrease with increase in the frequency of the ac signal, whereas the electrical conductivity increases.
{"title":"Dielectric properties of zinc oxide pellets","authors":"R. Shukla, A. Srivastava, K. Dubey, Nishant Kumar","doi":"10.1109/ELECTRO.2009.5441067","DOIUrl":"https://doi.org/10.1109/ELECTRO.2009.5441067","url":null,"abstract":"Preliminary investigations of dielectric constant, loss tangent and electrical conductivity of zinc oxide pellets have been done at 50°C for signal frequency varying from 1 kHz to 5MHz. The dielectric constant and dielectric loss tangent both decrease with increase in the frequency of the ac signal, whereas the electrical conductivity increases.","PeriodicalId":149384,"journal":{"name":"2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2009-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133145423","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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