Pub Date : 2009-12-01DOI: 10.1109/ELECTRO.2009.5441152
G. Bevilacqua, G. Parravicini
Within the Keldysh formalism, we consider electron transport through single-level quantum dots, and revisit the proper self-energy diagram up to quadratic terms in the Coulomb interaction. Convolutions of Green's functions in real energy domain are analyzed in terms of retarded and advanced, lesser and greater, time-ordered and anti-time-ordered components. By virtue of the multipole expansion of the Fermi functions and other elaborations, we provide elegant and fully analytic expressions for the various components of the bubble diagram, with promise of deeper insight on the many-body effects in biased devices.
{"title":"Electronic interactions in quantum dots within the Keldsyh formalism","authors":"G. Bevilacqua, G. Parravicini","doi":"10.1109/ELECTRO.2009.5441152","DOIUrl":"https://doi.org/10.1109/ELECTRO.2009.5441152","url":null,"abstract":"Within the Keldysh formalism, we consider electron transport through single-level quantum dots, and revisit the proper self-energy diagram up to quadratic terms in the Coulomb interaction. Convolutions of Green's functions in real energy domain are analyzed in terms of retarded and advanced, lesser and greater, time-ordered and anti-time-ordered components. By virtue of the multipole expansion of the Fermi functions and other elaborations, we provide elegant and fully analytic expressions for the various components of the bubble diagram, with promise of deeper insight on the many-body effects in biased devices.","PeriodicalId":149384,"journal":{"name":"2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems","volume":"111 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121294432","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-12-01DOI: 10.1109/ELECTRO.2009.5441045
Xiaoguang Gao, Shuping Li, Jingping Zhu, Yuzhou Sun, T. Tang
The properties of tapered-cladding single-mode hemispherical fiber micro-lenses whose radius is larger than twice of the core radius of the fiber are investigated by Monte Carlo simulation. The radial field distribution of the fiber is expressed as a Gaussian distribution. Simulation results show that the least confusion spots and the maximum axial intensity spots are not located at the focal plane of the hemispherical micro-lenses. The influence of the spherical aberration of the lenses on the spot size can not be neglected for micro-lenses with small curvature radius, and the Gaussian beam model typically used in the calculation of fiber micro-lenses is valid only when the radius of the refractive surface is larger than triple of the fiber core radius.
{"title":"Focusing property simulation of tapered-cladding single-mode hemispherical fiber micro-lenses","authors":"Xiaoguang Gao, Shuping Li, Jingping Zhu, Yuzhou Sun, T. Tang","doi":"10.1109/ELECTRO.2009.5441045","DOIUrl":"https://doi.org/10.1109/ELECTRO.2009.5441045","url":null,"abstract":"The properties of tapered-cladding single-mode hemispherical fiber micro-lenses whose radius is larger than twice of the core radius of the fiber are investigated by Monte Carlo simulation. The radial field distribution of the fiber is expressed as a Gaussian distribution. Simulation results show that the least confusion spots and the maximum axial intensity spots are not located at the focal plane of the hemispherical micro-lenses. The influence of the spherical aberration of the lenses on the spot size can not be neglected for micro-lenses with small curvature radius, and the Gaussian beam model typically used in the calculation of fiber micro-lenses is valid only when the radius of the refractive surface is larger than triple of the fiber core radius.","PeriodicalId":149384,"journal":{"name":"2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122013798","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-12-01DOI: 10.1109/ELECTRO.2009.5441139
Sudip Dogra, S. Manna, Aritra Banik, S. Maiti, S. Sarkar
Every year lot of properties and lives are lost in fires. When the firefighters start extinguishing fires, they have to enter the fire affected region, but the main problem is that in most cases the firefighters don't have an overall knowledge of inside scenario of progress of fire. Sometime it can lead to death of firemen. As for example nationwide, of the roughly 100 firefighters who die on duty each year, a quarter loses their lives in fires, according to the U.S. fire administration [1].Nearly half the deaths are the result of heart attacks or other health-related problems. So, when a firefighter loses his life in the line of duty, it is a reminder of the complexity and peril of the profession, despite a dedication to improved equipment and training in recent years. So, if the firefighters have a prior knowledge about the nature of progress of fire within the building/premises, they can plan their action and movement accordingly. In this paper we have proposed a scheme for planning of fire fighting that will help the firefighters to extinguish the fire more effectively.
{"title":"A novel approach for RFID based fire protection","authors":"Sudip Dogra, S. Manna, Aritra Banik, S. Maiti, S. Sarkar","doi":"10.1109/ELECTRO.2009.5441139","DOIUrl":"https://doi.org/10.1109/ELECTRO.2009.5441139","url":null,"abstract":"Every year lot of properties and lives are lost in fires. When the firefighters start extinguishing fires, they have to enter the fire affected region, but the main problem is that in most cases the firefighters don't have an overall knowledge of inside scenario of progress of fire. Sometime it can lead to death of firemen. As for example nationwide, of the roughly 100 firefighters who die on duty each year, a quarter loses their lives in fires, according to the U.S. fire administration [1].Nearly half the deaths are the result of heart attacks or other health-related problems. So, when a firefighter loses his life in the line of duty, it is a reminder of the complexity and peril of the profession, despite a dedication to improved equipment and training in recent years. So, if the firefighters have a prior knowledge about the nature of progress of fire within the building/premises, they can plan their action and movement accordingly. In this paper we have proposed a scheme for planning of fire fighting that will help the firefighters to extinguish the fire more effectively.","PeriodicalId":149384,"journal":{"name":"2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems","volume":"55 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123895982","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-12-01DOI: 10.1109/ELECTRO.2009.5441175
M. Dey, S. Chattopadhyay
In this paper, a comparative study has been performed on the locations of charge centroid and quantized carrier distributions for conventional and strained-Si MOS capacitors. The induced channel strain has been observed to modify surface quantization effect significantly. The position of charge centroid and the relevant carrier distribution have been studied for the variation of gate dielectric layer thickness, substrate doping concentration, and induced strain in the epitaxial layer. Position of charge centroid and peak carrier density modifies the measured oxide thickness, leading to the extraction of erroneous device parametric values. Therefore, a correction factor for the measured thickness of ultra thin gate dielectric layer has also been developed for the MOS capacitors with quantized surface.
{"title":"A comparative study of surface quantization effects in Si and strained-Si MOS structures with ultrathin gate oxides","authors":"M. Dey, S. Chattopadhyay","doi":"10.1109/ELECTRO.2009.5441175","DOIUrl":"https://doi.org/10.1109/ELECTRO.2009.5441175","url":null,"abstract":"In this paper, a comparative study has been performed on the locations of charge centroid and quantized carrier distributions for conventional and strained-Si MOS capacitors. The induced channel strain has been observed to modify surface quantization effect significantly. The position of charge centroid and the relevant carrier distribution have been studied for the variation of gate dielectric layer thickness, substrate doping concentration, and induced strain in the epitaxial layer. Position of charge centroid and peak carrier density modifies the measured oxide thickness, leading to the extraction of erroneous device parametric values. Therefore, a correction factor for the measured thickness of ultra thin gate dielectric layer has also been developed for the MOS capacitors with quantized surface.","PeriodicalId":149384,"journal":{"name":"2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems","volume":"322 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128548997","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-12-01DOI: 10.1109/ELECTRO.2009.5441080
V. Srivastava, D. Kumar, R. Sharma
Helical slow wave structure (SWS) for Ku-band 140W short length space TWT has been designed in a single section to achieve the desired saturated RF output power 140W, gain 25dB and electronic efficiency more than 28% over the frequency band of 10.9 to 11.7GHz. This short-length TWT has been designed for a microwave power module (MPM). In-house developed one-dimensional large signal model (SUNRAY-1D) and 2.5-dimensional large signal model (SUNRAY-2.5D) along with the commercial code CST-MWS have been used for the design of helix SWS assembly. Dependency of helix tape and APBN support rod dimensions on the SWS dispersion and impedance characteristics over the desired frequency band of 10.9 to 11.7 GHz has also been analyzed.
{"title":"Design of SWS for a Ku-band 140W short-length TWT","authors":"V. Srivastava, D. Kumar, R. Sharma","doi":"10.1109/ELECTRO.2009.5441080","DOIUrl":"https://doi.org/10.1109/ELECTRO.2009.5441080","url":null,"abstract":"Helical slow wave structure (SWS) for Ku-band 140W short length space TWT has been designed in a single section to achieve the desired saturated RF output power 140W, gain 25dB and electronic efficiency more than 28% over the frequency band of 10.9 to 11.7GHz. This short-length TWT has been designed for a microwave power module (MPM). In-house developed one-dimensional large signal model (SUNRAY-1D) and 2.5-dimensional large signal model (SUNRAY-2.5D) along with the commercial code CST-MWS have been used for the design of helix SWS assembly. Dependency of helix tape and APBN support rod dimensions on the SWS dispersion and impedance characteristics over the desired frequency band of 10.9 to 11.7 GHz has also been analyzed.","PeriodicalId":149384,"journal":{"name":"2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems","volume":"98 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125716314","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-12-01DOI: 10.1109/ELECTRO.2009.5441128
Abhishek Datta, R. Chowdhury, Sudip Dogra, S. Sarkar
Orthogonal Frequency Division Multiplexing (OFDM) has become very popular for its advantages. The researches are till going on for the development of OFDM. In this paper we have described a new simulator that can perform the BER analysis using OFDM technology and generate respective plots for bit errors vs signal energy (Eb/No) for several modulation schemes & different noise effects in three types of channels (namely AWGN, Rayleigh and Rician).
{"title":"Design and implementation of a simulator for the analysis of bit error rates by using orthogonal Frequency Division Multiplexing","authors":"Abhishek Datta, R. Chowdhury, Sudip Dogra, S. Sarkar","doi":"10.1109/ELECTRO.2009.5441128","DOIUrl":"https://doi.org/10.1109/ELECTRO.2009.5441128","url":null,"abstract":"Orthogonal Frequency Division Multiplexing (OFDM) has become very popular for its advantages. The researches are till going on for the development of OFDM. In this paper we have described a new simulator that can perform the BER analysis using OFDM technology and generate respective plots for bit errors vs signal energy (Eb/No) for several modulation schemes & different noise effects in three types of channels (namely AWGN, Rayleigh and Rician).","PeriodicalId":149384,"journal":{"name":"2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126794650","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-12-01DOI: 10.1109/ELECTRO.2009.5441068
V. Ganesh, Subra Suresh, S. Sudhakar, T. Premkumar, K. Baskar
A simple method to synthesize Gallium Nitride (GaN) powder using gallium trichloride (GaCl3) and ethylene diamine tetra acetic acid (EDTA) as starting materials has been discussed in this article. GaN nanocrystals were synthesized by nitradation of Gallium-EDTA complex at different temperatures of 600 °C, 700 °C, 800 °C and 900 °C in ammonia (NH3) atmosphere. X-ray diffraction analysis revealed the formation of single phase hexagonal GaN for the compound synthesized at temperature of 900 °C. However the other low temperature synthesis resulted mixed phases of β-Ga2O3, 2GaONO3.N2O5 and GaN. Scanning electron microscopy images show that the particles were in the form of agglomerates. The average size of the particle was found to be ∼20 nm by transmission electron microscopy. Energy Dispersive X-ray diffraction analysis shows variation in elemental composition of synthesized compound with respect to temperature. The room temperature photoluminescence exhibits band-edge emission of GaN at 3.46 eV.
{"title":"Synthesis and characterization of Gallium Nitride nanocrystals","authors":"V. Ganesh, Subra Suresh, S. Sudhakar, T. Premkumar, K. Baskar","doi":"10.1109/ELECTRO.2009.5441068","DOIUrl":"https://doi.org/10.1109/ELECTRO.2009.5441068","url":null,"abstract":"A simple method to synthesize Gallium Nitride (GaN) powder using gallium trichloride (GaCl<inf>3</inf>) and ethylene diamine tetra acetic acid (EDTA) as starting materials has been discussed in this article. GaN nanocrystals were synthesized by nitradation of Gallium-EDTA complex at different temperatures of 600 °C, 700 °C, 800 °C and 900 °C in ammonia (NH<inf>3</inf>) atmosphere. X-ray diffraction analysis revealed the formation of single phase hexagonal GaN for the compound synthesized at temperature of 900 °C. However the other low temperature synthesis resulted mixed phases of β-Ga<inf>2</inf>O<inf>3</inf>, 2GaONO<inf>3</inf>.N<inf>2</inf>O<inf>5</inf> and GaN. Scanning electron microscopy images show that the particles were in the form of agglomerates. The average size of the particle was found to be ∼20 nm by transmission electron microscopy. Energy Dispersive X-ray diffraction analysis shows variation in elemental composition of synthesized compound with respect to temperature. The room temperature photoluminescence exhibits band-edge emission of GaN at 3.46 eV.","PeriodicalId":149384,"journal":{"name":"2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems","volume":"67 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127255774","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-12-01DOI: 10.1109/ELECTRO.2009.5441164
H. Gupta, R. Parmar, R. Dave
Low Voltage Differential Signaling (LVDS) is a method used for high-speed transmission of binary data over copper cable. In the earlier remote sensing payload camera electronics, the multi-port parallel data were provided to spacecraft base-band system, requiring large number of I/O connectors and associated harnesses. This multi-port parallel data can be multiplexed, serialized and transmitted to other subsystems using LVDS interface thereby reducing the number of I/Os, cabling and associated weight of interface hardware. This work presents the design, simulation and analysis of I/O interface circuits for high speed operation which is fully compliant with the IEEE STD 1596.3 (LVDS). A common mode feedback (CMFB) circuitry is utilized in the LVDS transmitter to stabilize the common mode voltage in a pre-defined range. In most of the previous designs [1] output cells utilize voltage divider circuit composed of two large resistors (≈MΩ) between output pads and center is taped as feedback. These resistors may be off-chip discrete components (due to stringent stability and large die area requirement). The modified common mode feedback circuit has been designed and analyzed with appropriate transistor geometry and evaluated. Its performance is also compared with conventional CMFB design.
{"title":"High speed LVDS driver for SERDES","authors":"H. Gupta, R. Parmar, R. Dave","doi":"10.1109/ELECTRO.2009.5441164","DOIUrl":"https://doi.org/10.1109/ELECTRO.2009.5441164","url":null,"abstract":"Low Voltage Differential Signaling (LVDS) is a method used for high-speed transmission of binary data over copper cable. In the earlier remote sensing payload camera electronics, the multi-port parallel data were provided to spacecraft base-band system, requiring large number of I/O connectors and associated harnesses. This multi-port parallel data can be multiplexed, serialized and transmitted to other subsystems using LVDS interface thereby reducing the number of I/Os, cabling and associated weight of interface hardware. This work presents the design, simulation and analysis of I/O interface circuits for high speed operation which is fully compliant with the IEEE STD 1596.3 (LVDS). A common mode feedback (CMFB) circuitry is utilized in the LVDS transmitter to stabilize the common mode voltage in a pre-defined range. In most of the previous designs [1] output cells utilize voltage divider circuit composed of two large resistors (≈MΩ) between output pads and center is taped as feedback. These resistors may be off-chip discrete components (due to stringent stability and large die area requirement). The modified common mode feedback circuit has been designed and analyzed with appropriate transistor geometry and evaluated. Its performance is also compared with conventional CMFB design.","PeriodicalId":149384,"journal":{"name":"2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114464377","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-12-01DOI: 10.1109/ELECTRO.2009.5441178
S. Bhattacherjee, A. Biswas
In this paper, analytical models for threshold voltage Vt and subthreshold slope S for symmetric double gate MOSFETs with high-k dielectrics are proposed. Analytical approaches for predicting Vt and S are developed by considering effects of fringing electric field, interface trap charge density and sidewall spacers. The proposed model has been employed to calculate Vt, S and drain induced barrier lowering (DIBL) of DG MOSFETs with different gate dielectrics for various values of effective oxide thickness (EOT). Also the effect of sidewall spacers on Vt has been predicted. Accuracy of models has been verified by comparing analytical results obtained from proposed models with the reported simulated data.
{"title":"Impact of high-k dielectrics and spacer layers on the elctrical performance of symmetrical double gate MOSFETs","authors":"S. Bhattacherjee, A. Biswas","doi":"10.1109/ELECTRO.2009.5441178","DOIUrl":"https://doi.org/10.1109/ELECTRO.2009.5441178","url":null,"abstract":"In this paper, analytical models for threshold voltage Vt and subthreshold slope S for symmetric double gate MOSFETs with high-k dielectrics are proposed. Analytical approaches for predicting Vt and S are developed by considering effects of fringing electric field, interface trap charge density and sidewall spacers. The proposed model has been employed to calculate Vt, S and drain induced barrier lowering (DIBL) of DG MOSFETs with different gate dielectrics for various values of effective oxide thickness (EOT). Also the effect of sidewall spacers on Vt has been predicted. Accuracy of models has been verified by comparing analytical results obtained from proposed models with the reported simulated data.","PeriodicalId":149384,"journal":{"name":"2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems","volume":"697 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122985113","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-12-01DOI: 10.1109/ELECTRO.2009.5441067
R. Shukla, A. Srivastava, K. Dubey, Nishant Kumar
Preliminary investigations of dielectric constant, loss tangent and electrical conductivity of zinc oxide pellets have been done at 50°C for signal frequency varying from 1 kHz to 5MHz. The dielectric constant and dielectric loss tangent both decrease with increase in the frequency of the ac signal, whereas the electrical conductivity increases.
{"title":"Dielectric properties of zinc oxide pellets","authors":"R. Shukla, A. Srivastava, K. Dubey, Nishant Kumar","doi":"10.1109/ELECTRO.2009.5441067","DOIUrl":"https://doi.org/10.1109/ELECTRO.2009.5441067","url":null,"abstract":"Preliminary investigations of dielectric constant, loss tangent and electrical conductivity of zinc oxide pellets have been done at 50°C for signal frequency varying from 1 kHz to 5MHz. The dielectric constant and dielectric loss tangent both decrease with increase in the frequency of the ac signal, whereas the electrical conductivity increases.","PeriodicalId":149384,"journal":{"name":"2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems","volume":"59 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133145423","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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