Pub Date : 2009-12-01DOI: 10.1109/ELECTRO.2009.5441136
B. Mondal, P. Basu, B. T. Reddy, H. Saha, P. Bhattacharya, C. Roychoudhury
In this work the process for the realization of Oxidised Macro Porous Silicon (OMPS) layer as a material for thermal isolation has been studied. Macro Porous silicon layers are created by anodisation of P-type (10–20 Ω-cm) silicon with HF and DMF (Dimethylformamide), which are then followed by thermal oxidation in order to find a compromise between higher thermal isolation and good mechanical stability. The morphology of the samples are studied by FESEM. A simple model for determining the thermal conductivity (TC) of the OMPS layer has also been formulated which shows that the TC of OMPS layer are two to three order less than crystalline silicon. Heat distribution of a microheater over the OMPS layer has been simulated by using finite element analysis with ANSYS software which shows the higher degree of thermal isolation and better mechanical strength with OMPS layer compared to conventional methods.
{"title":"Oxidized Macro Porous Silicon layer as an effective material for thermal insulation in thermal effect microsystems.","authors":"B. Mondal, P. Basu, B. T. Reddy, H. Saha, P. Bhattacharya, C. Roychoudhury","doi":"10.1109/ELECTRO.2009.5441136","DOIUrl":"https://doi.org/10.1109/ELECTRO.2009.5441136","url":null,"abstract":"In this work the process for the realization of Oxidised Macro Porous Silicon (OMPS) layer as a material for thermal isolation has been studied. Macro Porous silicon layers are created by anodisation of P-type (10–20 Ω-cm) silicon with HF and DMF (Dimethylformamide), which are then followed by thermal oxidation in order to find a compromise between higher thermal isolation and good mechanical stability. The morphology of the samples are studied by FESEM. A simple model for determining the thermal conductivity (TC) of the OMPS layer has also been formulated which shows that the TC of OMPS layer are two to three order less than crystalline silicon. Heat distribution of a microheater over the OMPS layer has been simulated by using finite element analysis with ANSYS software which shows the higher degree of thermal isolation and better mechanical strength with OMPS layer compared to conventional methods.","PeriodicalId":149384,"journal":{"name":"2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2009-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125437534","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-12-01DOI: 10.1109/ELECTRO.2009.5441121
V. K. Dwivedi, S. Tripathi, V. Tripathi, R. Tripathi, S. Tiwari
Orthogonal frequency division multiplexing (OFDM) has several properties which make it an attractive modulation scheme for high speed wireless transmission links. In this paper, a novel power sharing technique is proposed for different users to improve the system performance. The proposed technique is based on use of variable amplitude of subcarriers (VAS). Power can be increased to the users who are crossing the reference boundary (RB) and moving farther towards foot print (FP) of a cell. In this way the users having weak SNR can sustain their call even in multipath fading environment. Assuming knowledge of the instantaneous channel gain estimation for all users, we propose an OFDM dynamic adaptive subcarriers scheme to maintain optimum SNR level of the subchannels which are in deep fade. Simulation results show that the performance of the proposed algorithm is much better than that of other algorithms.
{"title":"Shared power allocation among subcarriers of OFDM systems","authors":"V. K. Dwivedi, S. Tripathi, V. Tripathi, R. Tripathi, S. Tiwari","doi":"10.1109/ELECTRO.2009.5441121","DOIUrl":"https://doi.org/10.1109/ELECTRO.2009.5441121","url":null,"abstract":"Orthogonal frequency division multiplexing (OFDM) has several properties which make it an attractive modulation scheme for high speed wireless transmission links. In this paper, a novel power sharing technique is proposed for different users to improve the system performance. The proposed technique is based on use of variable amplitude of subcarriers (VAS). Power can be increased to the users who are crossing the reference boundary (RB) and moving farther towards foot print (FP) of a cell. In this way the users having weak SNR can sustain their call even in multipath fading environment. Assuming knowledge of the instantaneous channel gain estimation for all users, we propose an OFDM dynamic adaptive subcarriers scheme to maintain optimum SNR level of the subchannels which are in deep fade. Simulation results show that the performance of the proposed algorithm is much better than that of other algorithms.","PeriodicalId":149384,"journal":{"name":"2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2009-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128729486","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-12-01DOI: 10.1109/ELECTRO.2009.5441111
M. Dubey, D. Bhatnagar, V. K. Saxena, J. S. Saini
The paper presents the radiation performance of a dual frequency broadband hexagonal microstrip antenna. The simulation of hexagonal antenna designed on glass epoxy FR-4 substrate with appropriate dimensions is carried out using IE3D simulator. The optimization of side lengths and angles of hexagonal geometry is carried out to achieve much improved bandwidth (10.2%) and dual frequency performance. In the range of frequency where antenna is displaying broadband performance, the directivity, gain and efficiency are almost constant. The radiation patterns obtained at five frequencies within this frequency range provides identical shape with direction of maximum intensity normal to the patch geometry. The performance of this antenna is compared with that of a rectangular patch antenna.
{"title":"Broadband dual frequency hexagonal microstrip antenna for modern communication systems","authors":"M. Dubey, D. Bhatnagar, V. K. Saxena, J. S. Saini","doi":"10.1109/ELECTRO.2009.5441111","DOIUrl":"https://doi.org/10.1109/ELECTRO.2009.5441111","url":null,"abstract":"The paper presents the radiation performance of a dual frequency broadband hexagonal microstrip antenna. The simulation of hexagonal antenna designed on glass epoxy FR-4 substrate with appropriate dimensions is carried out using IE3D simulator. The optimization of side lengths and angles of hexagonal geometry is carried out to achieve much improved bandwidth (10.2%) and dual frequency performance. In the range of frequency where antenna is displaying broadband performance, the directivity, gain and efficiency are almost constant. The radiation patterns obtained at five frequencies within this frequency range provides identical shape with direction of maximum intensity normal to the patch geometry. The performance of this antenna is compared with that of a rectangular patch antenna.","PeriodicalId":149384,"journal":{"name":"2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2009-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127853781","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-12-01DOI: 10.1109/ELECTRO.2009.5441174
Mohendra Roy, Santanu Sharma
There is an increasing demand of Biosensors many branch of science and technology. The Ion Sensitive Field Effect Transistor (ISFET) is one of the most essential components of ion sensing biosensor. ISFET is a field effect transistor having ion sensing capability. It has got countless potential to fabricate sophisticated sensing devices. In this article, an effort has been taken to ascribe the effect of the cylindrical shape over the sensitivity of ISFET. A reduce in threshold voltage has been noticed in the cylindrical ISFET as compared to that of the planer one. The present work highlights the change in threshold voltage of Planer and cylindrical ISFET with respect to pH.
{"title":"A novel approach for modeling the threshold voltage of cylindrical Ion Sensitive Field Effect Transistor","authors":"Mohendra Roy, Santanu Sharma","doi":"10.1109/ELECTRO.2009.5441174","DOIUrl":"https://doi.org/10.1109/ELECTRO.2009.5441174","url":null,"abstract":"There is an increasing demand of Biosensors many branch of science and technology. The Ion Sensitive Field Effect Transistor (ISFET) is one of the most essential components of ion sensing biosensor. ISFET is a field effect transistor having ion sensing capability. It has got countless potential to fabricate sophisticated sensing devices. In this article, an effort has been taken to ascribe the effect of the cylindrical shape over the sensitivity of ISFET. A reduce in threshold voltage has been noticed in the cylindrical ISFET as compared to that of the planer one. The present work highlights the change in threshold voltage of Planer and cylindrical ISFET with respect to pH.","PeriodicalId":149384,"journal":{"name":"2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2009-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121542713","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-12-01DOI: 10.1109/ELECTRO.2009.5441133
D. Mishra, Aasiya Topiwala, K. Dasgupta
The Ka band regenerative payload is a transponder of GSAT-4 satellite [1]. It provides Narrow Spot Beams, Wide Bandwidth and small size of antenna for both transmission and reception. The Signaling Demodulator is a one of the important subsystem of regenerative Payload. This Signaling Demodulator was developed in-house for providing signaling information to provide communication between one spot beam to other. The demodulator software was developed for functionality of getting the signaling request from the user terminal & the processing of the request onboard.
{"title":"Design, implementation and realization of 64Kbps QPSK based burst demodulator for onboard application","authors":"D. Mishra, Aasiya Topiwala, K. Dasgupta","doi":"10.1109/ELECTRO.2009.5441133","DOIUrl":"https://doi.org/10.1109/ELECTRO.2009.5441133","url":null,"abstract":"The Ka band regenerative payload is a transponder of GSAT-4 satellite [1]. It provides Narrow Spot Beams, Wide Bandwidth and small size of antenna for both transmission and reception. The Signaling Demodulator is a one of the important subsystem of regenerative Payload. This Signaling Demodulator was developed in-house for providing signaling information to provide communication between one spot beam to other. The demodulator software was developed for functionality of getting the signaling request from the user terminal & the processing of the request onboard.","PeriodicalId":149384,"journal":{"name":"2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2009-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116240469","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-12-01DOI: 10.1109/ELECTRO.2009.5441094
N. K. Saxena, P. Pourush
Dual frequency band microstrip hexagonal patch linear array antenna integrated with RF-MEMS switches is proposed which can operate at dual frequencies on the basis of reconfiguration of the geometrical structure. To reconfigure the structure an additional hexagonal patch ring is placed around the main patch with MEMS switches. These switches are incorporated to hexagonal patch to control or change the frequency. The linear array of these hexagonal patches gives more directivity and scanning power, which makes it useful in many communication systems.
{"title":"Dual frequency microstrip hexagonal patch linear array antenna integrated with RF-MEMS switches","authors":"N. K. Saxena, P. Pourush","doi":"10.1109/ELECTRO.2009.5441094","DOIUrl":"https://doi.org/10.1109/ELECTRO.2009.5441094","url":null,"abstract":"Dual frequency band microstrip hexagonal patch linear array antenna integrated with RF-MEMS switches is proposed which can operate at dual frequencies on the basis of reconfiguration of the geometrical structure. To reconfigure the structure an additional hexagonal patch ring is placed around the main patch with MEMS switches. These switches are incorporated to hexagonal patch to control or change the frequency. The linear array of these hexagonal patches gives more directivity and scanning power, which makes it useful in many communication systems.","PeriodicalId":149384,"journal":{"name":"2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2009-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127466326","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-12-01DOI: 10.1109/ELECTRO.2009.5441095
J. Shivhare, S. B. Jain
A five-pole bandpass filter is designed using compact filter occupies a very small area. The full-wave simulator IE3D is being used to design the resonator and to calculate the coupling coefficients. Measured results are to be compared with the computed responses. The folded hairpin line resonator filters are simple to design and built. This paper presents a new class of folded hairpin line microstrip resonator filters wih 60% or more reduction in size compared to the conventional hairpin line resonators. The proposed five-pole folded hairpin line microstrip filter is a compact structured, narrow band, high selectivity, small sized and low cost band pass filter for trans/receive communication systems in L-band.
{"title":"Design and development of a compact and low cost folded-hairpin line bandpass filter for L-band Communication","authors":"J. Shivhare, S. B. Jain","doi":"10.1109/ELECTRO.2009.5441095","DOIUrl":"https://doi.org/10.1109/ELECTRO.2009.5441095","url":null,"abstract":"A five-pole bandpass filter is designed using compact filter occupies a very small area. The full-wave simulator IE3D is being used to design the resonator and to calculate the coupling coefficients. Measured results are to be compared with the computed responses. The folded hairpin line resonator filters are simple to design and built. This paper presents a new class of folded hairpin line microstrip resonator filters wih 60% or more reduction in size compared to the conventional hairpin line resonators. The proposed five-pole folded hairpin line microstrip filter is a compact structured, narrow band, high selectivity, small sized and low cost band pass filter for trans/receive communication systems in L-band.","PeriodicalId":149384,"journal":{"name":"2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2009-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128075534","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-12-01DOI: 10.1109/ELECTRO.2009.5441170
P. Roy, B. Syamal, N. Mohankumar, C. Sarkar
We have developed an analytical subthreshold drain current model along with subthreshold swing for surrounding gate (SG MOSFET) MOSFETs. The model is derived from direct use of the Gaussian law rather than using Poisson equation as has been implemented earlier. The models for current and swing have been verified by comparison with 3-D numerical results for different channel lengths, channel thickness and oxide thickness: a very good agreement with the numerical simulations has been observed.
{"title":"Subthreshold current modeling of surrounding gate MOSFET: A gaussian approach","authors":"P. Roy, B. Syamal, N. Mohankumar, C. Sarkar","doi":"10.1109/ELECTRO.2009.5441170","DOIUrl":"https://doi.org/10.1109/ELECTRO.2009.5441170","url":null,"abstract":"We have developed an analytical subthreshold drain current model along with subthreshold swing for surrounding gate (SG MOSFET) MOSFETs. The model is derived from direct use of the Gaussian law rather than using Poisson equation as has been implemented earlier. The models for current and swing have been verified by comparison with 3-D numerical results for different channel lengths, channel thickness and oxide thickness: a very good agreement with the numerical simulations has been observed.","PeriodicalId":149384,"journal":{"name":"2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2009-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130629264","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-12-01DOI: 10.1109/ELECTRO.2009.5441059
K. Misra, K. Dubey, R. Shukla, A. Srivastava
Zinc oxide (ZnO) thin films are playing several important roles in the recent development of science and technology. In the present paper ZnO thin films, undoped as well as calcium (Ca) doped, are deposited by sol-gel spin coating method. The films are polycrystalline and highly transparent. The dielectric constants, real and imaginary part both, of the films are investigated. The imaginary part is found to decrease with increase in Ca fraction indicating the decrement of free carriers in ZnO films.
{"title":"Reduction in carrier concentration by calcium doping in ZnO thin films","authors":"K. Misra, K. Dubey, R. Shukla, A. Srivastava","doi":"10.1109/ELECTRO.2009.5441059","DOIUrl":"https://doi.org/10.1109/ELECTRO.2009.5441059","url":null,"abstract":"Zinc oxide (ZnO) thin films are playing several important roles in the recent development of science and technology. In the present paper ZnO thin films, undoped as well as calcium (Ca) doped, are deposited by sol-gel spin coating method. The films are polycrystalline and highly transparent. The dielectric constants, real and imaginary part both, of the films are investigated. The imaginary part is found to decrease with increase in Ca fraction indicating the decrement of free carriers in ZnO films.","PeriodicalId":149384,"journal":{"name":"2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2009-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130853907","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-12-01DOI: 10.1109/ELECTRO.2009.5441238
Vikash Ranjan, Avireni Srinivasulu
A reconfigurable Sigma-Delta Modulator, which is able to support the various standards of advanced new generation Mobile Technology, is presented in this paper. The system will be able to process more than one signal concurrently. Major Design issues like Area and Power Constraints are outlined and considered in the proper designing of the system. Various configurations are proposed for different technology and the basic building block of the system, a second order low noise Sigma-Delta modulator is designed and simulated in Simulink, Matlab 7.0 with proper consideration of various noises present in the communication channel.
{"title":"Design and simulation of Sigma-Delta Modulator for advanced new generation mobile technology","authors":"Vikash Ranjan, Avireni Srinivasulu","doi":"10.1109/ELECTRO.2009.5441238","DOIUrl":"https://doi.org/10.1109/ELECTRO.2009.5441238","url":null,"abstract":"A reconfigurable Sigma-Delta Modulator, which is able to support the various standards of advanced new generation Mobile Technology, is presented in this paper. The system will be able to process more than one signal concurrently. Major Design issues like Area and Power Constraints are outlined and considered in the proper designing of the system. Various configurations are proposed for different technology and the basic building block of the system, a second order low noise Sigma-Delta modulator is designed and simulated in Simulink, Matlab 7.0 with proper consideration of various noises present in the communication channel.","PeriodicalId":149384,"journal":{"name":"2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2009-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130389235","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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