Pub Date : 2009-12-01DOI: 10.1109/ELECTRO.2009.5441181
Srirupa Goswami, A. Biswas
The influence of strain on the gate leakage current has been investigated analytically in detail for strained-Si channel MOSFETs for a range of gate voltages and the gate insulator thicknesses. Our analysis relies on the determination of surface potential by solving the Poisson's equation using both the analytical and numerical approaches. The analytical model for the gate leakage current density has been proposed by considering strain dependent material and transport parameters and also band parameters. The different components of the gate leakage current densities such as the Fowler-Nordheim (F-N) and direct leakage current densities along with their sub components have been determined analytically for a wide range of strain values. Further the validity of our model has been confirmed by comparing our theoretical results for the gate leakage current density with the reported experimental data.
{"title":"Modeling and numerical simulation of gate leakage current in strained-Si channel nMOSFETs with highk gate dielectrics","authors":"Srirupa Goswami, A. Biswas","doi":"10.1109/ELECTRO.2009.5441181","DOIUrl":"https://doi.org/10.1109/ELECTRO.2009.5441181","url":null,"abstract":"The influence of strain on the gate leakage current has been investigated analytically in detail for strained-Si channel MOSFETs for a range of gate voltages and the gate insulator thicknesses. Our analysis relies on the determination of surface potential by solving the Poisson's equation using both the analytical and numerical approaches. The analytical model for the gate leakage current density has been proposed by considering strain dependent material and transport parameters and also band parameters. The different components of the gate leakage current densities such as the Fowler-Nordheim (F-N) and direct leakage current densities along with their sub components have been determined analytically for a wide range of strain values. Further the validity of our model has been confirmed by comparing our theoretical results for the gate leakage current density with the reported experimental data.","PeriodicalId":149384,"journal":{"name":"2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems","volume":"57 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127190529","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-12-01DOI: 10.1109/ELECTRO.2009.5441044
A. G. Guru Prasad, B. Abhishek, S. Asokan
This paper discusses the design and development of newer packaging schemes for Fiber Bragg Gratings (FBGs) for sensing water pressures inside ocean. The FBGs used in this work have been fabricated using the phase mask technique, in a photosensitive germano silicate optical fiber using a 248nm UV light. The wavelength shifts (ΔλB) in the reflected light from the FBG, resulting from the strain/pressure imparted on the FBGs have been recorded using a high speed Micron-optics FBG interrogation system. Further, an experimental set up has been fabricated to test the efficiency and characteristics of different sensor packages developed. The results obtained indicate that the packages are of good sensitivity, rugged and can be customized depending on the requirement of the application.
{"title":"Fiber Bragg Grating sensor packages for sensing water pressures inside ocean","authors":"A. G. Guru Prasad, B. Abhishek, S. Asokan","doi":"10.1109/ELECTRO.2009.5441044","DOIUrl":"https://doi.org/10.1109/ELECTRO.2009.5441044","url":null,"abstract":"This paper discusses the design and development of newer packaging schemes for Fiber Bragg Gratings (FBGs) for sensing water pressures inside ocean. The FBGs used in this work have been fabricated using the phase mask technique, in a photosensitive germano silicate optical fiber using a 248nm UV light. The wavelength shifts (ΔλB) in the reflected light from the FBG, resulting from the strain/pressure imparted on the FBGs have been recorded using a high speed Micron-optics FBG interrogation system. Further, an experimental set up has been fabricated to test the efficiency and characteristics of different sensor packages developed. The results obtained indicate that the packages are of good sensitivity, rugged and can be customized depending on the requirement of the application.","PeriodicalId":149384,"journal":{"name":"2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems","volume":"152 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127302778","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-12-01DOI: 10.1109/ELECTRO.2009.5441112
M. Biswas, A. Mandal
A very simple CAD formulae based on cavity model analysis is used to compute the input impedance of an Equilateral Triangular Microstrip Patch Antenna (ETMPA) for wide range of variations of superstrate parameters .The computed values are compared with theoretical and experimental values available in open literature. A simulation software (CFDTD) is also used to validate our model.
{"title":"Improved CAD formulae to calculate the input impedance of an equilateral triangular microstrip patch including radome effect","authors":"M. Biswas, A. Mandal","doi":"10.1109/ELECTRO.2009.5441112","DOIUrl":"https://doi.org/10.1109/ELECTRO.2009.5441112","url":null,"abstract":"A very simple CAD formulae based on cavity model analysis is used to compute the input impedance of an Equilateral Triangular Microstrip Patch Antenna (ETMPA) for wide range of variations of superstrate parameters .The computed values are compared with theoretical and experimental values available in open literature. A simulation software (CFDTD) is also used to validate our model.","PeriodicalId":149384,"journal":{"name":"2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130143704","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-12-01DOI: 10.1109/ELECTRO.2009.5441131
K. L. Baishnab, A. Nag
The design of a high speed packet switch has been described here. The switch having 4 inputs and 4 outputs (4×4) each of four inputs is further subdivided into additional four input queues. The proposed designed have considered both restricted sharing as well as complete sharing. In restricted sharing a finite threshold is imposed to all queue's length. However on unrestricted sharing one queue can occupy, the free space of others queue under certain conditions and invite starvation for those other queues. Under the restricted sharing we have used different algorithms like fixed threshold, Push-out the delayed packet and dynamic threshold under different loads and buffer's size, delay. The simulation results show that a variety of outcomes based on load, buffer size, and delay
{"title":"A very high efficient input shared buffered packet switch for broadband wireless communications","authors":"K. L. Baishnab, A. Nag","doi":"10.1109/ELECTRO.2009.5441131","DOIUrl":"https://doi.org/10.1109/ELECTRO.2009.5441131","url":null,"abstract":"The design of a high speed packet switch has been described here. The switch having 4 inputs and 4 outputs (4×4) each of four inputs is further subdivided into additional four input queues. The proposed designed have considered both restricted sharing as well as complete sharing. In restricted sharing a finite threshold is imposed to all queue's length. However on unrestricted sharing one queue can occupy, the free space of others queue under certain conditions and invite starvation for those other queues. Under the restricted sharing we have used different algorithms like fixed threshold, Push-out the delayed packet and dynamic threshold under different loads and buffer's size, delay. The simulation results show that a variety of outcomes based on load, buffer size, and delay","PeriodicalId":149384,"journal":{"name":"2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130568141","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-12-01DOI: 10.1109/ELECTRO.2009.5441137
Anjula
The gas sensors fabricated using conducting polymers such as Polythiopene (PTh) as the active layers have been studied here. This paper discusses the preparation of the gas sensor using various method and the measurement and result of gas sensor behaviour. The factors that affect the performances of the gas sensors are also addressed. The advantage and disadvantages of the sensors and a brief prospect in this research field are discussed at the end of the paper.
{"title":"Gas sensor using polymer films","authors":"Anjula","doi":"10.1109/ELECTRO.2009.5441137","DOIUrl":"https://doi.org/10.1109/ELECTRO.2009.5441137","url":null,"abstract":"The gas sensors fabricated using conducting polymers such as Polythiopene (PTh) as the active layers have been studied here. This paper discusses the preparation of the gas sensor using various method and the measurement and result of gas sensor behaviour. The factors that affect the performances of the gas sensors are also addressed. The advantage and disadvantages of the sensors and a brief prospect in this research field are discussed at the end of the paper.","PeriodicalId":149384,"journal":{"name":"2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems","volume":"62 3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131022853","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-12-01DOI: 10.1109/ELECTRO.2009.5441099
C. Chandan, A. Ghosh, S. Ghosh, S. Chattopadhyay
A rectangular microstrip patch on air substrate is theoretically and experimentally demonstrated and compared with conventional microstrip patch. Compared to conventional one, these show improved radiation performance. Around 2–3 dB improvement of peak gain observed.
{"title":"Radiation characteristics of rectangular patch antenna using air substrates","authors":"C. Chandan, A. Ghosh, S. Ghosh, S. Chattopadhyay","doi":"10.1109/ELECTRO.2009.5441099","DOIUrl":"https://doi.org/10.1109/ELECTRO.2009.5441099","url":null,"abstract":"A rectangular microstrip patch on air substrate is theoretically and experimentally demonstrated and compared with conventional microstrip patch. Compared to conventional one, these show improved radiation performance. Around 2–3 dB improvement of peak gain observed.","PeriodicalId":149384,"journal":{"name":"2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126821788","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-12-01DOI: 10.1109/ELECTRO.2009.5441123
Awadhesh Pachauri, M. Bhuyan
This paper describes a wavelet and energy based technique for the detection of ventricular premature arrhythmic beats in Electrocardiogram (ECG) that are of great importance in evaluating and predicting life threatening ventricular arrhythmias. Premature Ventricular Contraction (PVC) can be seen in ECG as abnormal wave shape of the QRS complex. A new scheme is proposed for the detection of premature ventricular beats, which is a vital function in rhythm monitoring of cardiac patients. The method for classifying the abnormal complexes from the normal ones is based on the concepts of RR-interval of detected R peaks and energy analysis of ECG signal. ECG R-peaks have been detected by wavelet method in which ECG signal has been decomposed to the required level by selected wavelet and the selected detail coefficient d4 by energy, frequency and correlation analysis undergoes thresholding and decision logic to detect R-peaks. An RR-interval window is placed between the two successive R-peaks when the RR-interval exceeds beyond a predefined threshold. Furthermore, window based energy analysis of ECG signal is performed by eliminating the low frequency samples and a higher energy window beyond a predefined threshold is analyzed. An intersection of these two windows gives rise actual number and positions of PVCs in the ECG signal.
{"title":"Wavelet and energy based approach for PVC detection","authors":"Awadhesh Pachauri, M. Bhuyan","doi":"10.1109/ELECTRO.2009.5441123","DOIUrl":"https://doi.org/10.1109/ELECTRO.2009.5441123","url":null,"abstract":"This paper describes a wavelet and energy based technique for the detection of ventricular premature arrhythmic beats in Electrocardiogram (ECG) that are of great importance in evaluating and predicting life threatening ventricular arrhythmias. Premature Ventricular Contraction (PVC) can be seen in ECG as abnormal wave shape of the QRS complex. A new scheme is proposed for the detection of premature ventricular beats, which is a vital function in rhythm monitoring of cardiac patients. The method for classifying the abnormal complexes from the normal ones is based on the concepts of RR-interval of detected R peaks and energy analysis of ECG signal. ECG R-peaks have been detected by wavelet method in which ECG signal has been decomposed to the required level by selected wavelet and the selected detail coefficient d4 by energy, frequency and correlation analysis undergoes thresholding and decision logic to detect R-peaks. An RR-interval window is placed between the two successive R-peaks when the RR-interval exceeds beyond a predefined threshold. Furthermore, window based energy analysis of ECG signal is performed by eliminating the low frequency samples and a higher energy window beyond a predefined threshold is analyzed. An intersection of these two windows gives rise actual number and positions of PVCs in the ECG signal.","PeriodicalId":149384,"journal":{"name":"2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121294484","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-12-01DOI: 10.1109/ELECTRO.2009.5441153
M. G. Armaki, Mohamad Kazem Anvarifard, S. E. Hosseini
The drift-diffusion (DD) model is not accurate for simulation of submicrometer semiconductor devices. Using RBF NN, a neuro space mapping is proposed to DD model parameters. The DD model with mapped parameters can produce accurate simulation results of the hydrodynamic model. Simulations of a n-i-n diode confirm the ability of the proposed method for submicron device simulation.
{"title":"A novel method for modeling semiconductor by neuro space mapping","authors":"M. G. Armaki, Mohamad Kazem Anvarifard, S. E. Hosseini","doi":"10.1109/ELECTRO.2009.5441153","DOIUrl":"https://doi.org/10.1109/ELECTRO.2009.5441153","url":null,"abstract":"The drift-diffusion (DD) model is not accurate for simulation of submicrometer semiconductor devices. Using RBF NN, a neuro space mapping is proposed to DD model parameters. The DD model with mapped parameters can produce accurate simulation results of the hydrodynamic model. Simulations of a n-i-n diode confirm the ability of the proposed method for submicron device simulation.","PeriodicalId":149384,"journal":{"name":"2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126100469","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-12-01DOI: 10.1109/ELECTRO.2009.5441055
K. Thapa, R. Pandey, P. Pandey, S. P. Ojha
We present the ultrafast switching property in one dimensional defect photonic crystals theoretically, owing the mechanism of transmittance. By analyzing the transmittance of electromagnetic waves through the defect photonic crystal with the help of simple transfer matrix method, it is found that the defect layer in the photonic crystal can be induced the localized modes in the form of sharp transmission peak inside the photonic band gap. The number of transmission peaks can be tuned by changing the thickness of the defect layers.
{"title":"Ultrafast switching property in one dimensional defect photonic crystals","authors":"K. Thapa, R. Pandey, P. Pandey, S. P. Ojha","doi":"10.1109/ELECTRO.2009.5441055","DOIUrl":"https://doi.org/10.1109/ELECTRO.2009.5441055","url":null,"abstract":"We present the ultrafast switching property in one dimensional defect photonic crystals theoretically, owing the mechanism of transmittance. By analyzing the transmittance of electromagnetic waves through the defect photonic crystal with the help of simple transfer matrix method, it is found that the defect layer in the photonic crystal can be induced the localized modes in the form of sharp transmission peak inside the photonic band gap. The number of transmission peaks can be tuned by changing the thickness of the defect layers.","PeriodicalId":149384,"journal":{"name":"2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126599283","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-12-01DOI: 10.1109/ELECTRO.2009.5441074
O. S. Lamba, M. Kaushik, Sushil Kumar, V. Jindal, Vijay Singh, Shilpam Ratan, D. Pal, D. Kant, L. M. Joshi
The paper deals with the design fabrication and cold testing of vacuum RF window for C-band 250 kW CW power klystron. The simulation of the window has been carried out using the CST microwave studio software. The proposed window is designed for 5 GHz operating frequency for handling 250 kW of RF power. In the proposed window geometry, metallized alumina disc (99.5 % purity) of diameter 56 mm and thickness 1.5 mm is brazed in a cylindrical waveguide of diameter 56 mm. The cylindrical waveguide is terminated to WR 187 waveguide at its both ends. The return loss and insertion loss of the above mentioned window has been found to be −48 dB and 0.05 dB respectively which are well matched with experimental values. The bandwidth of 170 MHz was achieved. The window performance has been found satisfactory for microwave transmission.
{"title":"Development and cold testing of vacuum RF window for C band 250 kW CW power klystron","authors":"O. S. Lamba, M. Kaushik, Sushil Kumar, V. Jindal, Vijay Singh, Shilpam Ratan, D. Pal, D. Kant, L. M. Joshi","doi":"10.1109/ELECTRO.2009.5441074","DOIUrl":"https://doi.org/10.1109/ELECTRO.2009.5441074","url":null,"abstract":"The paper deals with the design fabrication and cold testing of vacuum RF window for C-band 250 kW CW power klystron. The simulation of the window has been carried out using the CST microwave studio software. The proposed window is designed for 5 GHz operating frequency for handling 250 kW of RF power. In the proposed window geometry, metallized alumina disc (99.5 % purity) of diameter 56 mm and thickness 1.5 mm is brazed in a cylindrical waveguide of diameter 56 mm. The cylindrical waveguide is terminated to WR 187 waveguide at its both ends. The return loss and insertion loss of the above mentioned window has been found to be −48 dB and 0.05 dB respectively which are well matched with experimental values. The bandwidth of 170 MHz was achieved. The window performance has been found satisfactory for microwave transmission.","PeriodicalId":149384,"journal":{"name":"2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121533847","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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