Pub Date : 2009-12-01DOI: 10.1109/ELECTRO.2009.5441150
Saji Joseph, George James, T. Mathew
This paper will discuss the analysis and reduction of off-state leakage current on DG MOSFETs. We examine the influence of channel length (Lg) and channel thickness (Tsi) on device performance of nanoscale Double Gate (DG) MOSFETs, employing Non-equilibrium Green's function (NEGF) formalism. When the channel length is shrinks down, the electrostatic controllability of the gate over the channel decreases due to the increased charge sharing from source/drain. The present work provides design insights into the performance of nanoscale DG-MOSFET devices with optimal channel engineering and serves as a tool to optimize important device and technological parameters for 10–24′nm range.
{"title":"Reduction of off-state leakage current on fully depleted DG-MOSFETs","authors":"Saji Joseph, George James, T. Mathew","doi":"10.1109/ELECTRO.2009.5441150","DOIUrl":"https://doi.org/10.1109/ELECTRO.2009.5441150","url":null,"abstract":"This paper will discuss the analysis and reduction of off-state leakage current on DG MOSFETs. We examine the influence of channel length (Lg) and channel thickness (Tsi) on device performance of nanoscale Double Gate (DG) MOSFETs, employing Non-equilibrium Green's function (NEGF) formalism. When the channel length is shrinks down, the electrostatic controllability of the gate over the channel decreases due to the increased charge sharing from source/drain. The present work provides design insights into the performance of nanoscale DG-MOSFET devices with optimal channel engineering and serves as a tool to optimize important device and technological parameters for 10–24′nm range.","PeriodicalId":149384,"journal":{"name":"2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123955597","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-12-01DOI: 10.1109/ELECTRO.2009.5441154
R. Rani, L.K. Singh, N. Sharma
The limitation of speed of modern computers in performing the arithmetic operations such as addition, subtraction and multiplication suffer from carry propagation delay. Carry free arithmetic operations can be achieved using a higher radix number system such as Quaternary Signed Digit (QSD). We proposed fast adders based on Quaternary signed digit number system. In QSD, each digit can be represented by a number from −3 to 3. Carry free addition and other operations on a large number of digits such as 64, 128, or more can be implemented with constant delay and less complexity. The design of these circuits is carried out using FPGA tools. The designs are simulated using modelsim software and synthesized using Leonardo Spectrum.
{"title":"FPGA implementation of fast adders using Quaternary Signed Digit number system","authors":"R. Rani, L.K. Singh, N. Sharma","doi":"10.1109/ELECTRO.2009.5441154","DOIUrl":"https://doi.org/10.1109/ELECTRO.2009.5441154","url":null,"abstract":"The limitation of speed of modern computers in performing the arithmetic operations such as addition, subtraction and multiplication suffer from carry propagation delay. Carry free arithmetic operations can be achieved using a higher radix number system such as Quaternary Signed Digit (QSD). We proposed fast adders based on Quaternary signed digit number system. In QSD, each digit can be represented by a number from −3 to 3. Carry free addition and other operations on a large number of digits such as 64, 128, or more can be implemented with constant delay and less complexity. The design of these circuits is carried out using FPGA tools. The designs are simulated using modelsim software and synthesized using Leonardo Spectrum.","PeriodicalId":149384,"journal":{"name":"2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128609058","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-12-01DOI: 10.1109/ELECTRO.2009.5441046
S. Srivastava, S. K. Srivastava, S. P. Ojha
The present paper describes the study of reflection properties and role of wave impedance in the formation of photonic band gaps in one-dimensional magnetic star waveguide structure (MSWG). From the analysis of the dispersion characteristics, it is found that in magnetic SWG structure existence of band gaps does not require the contrast in the wave impedance of the constituent materials whereas the contrast in wave impedance is must for the existence of band gap in normal magnetic photonic crystal (MPC) structure. Moreover, magnetic SWG structures show wider photonic band gaps in comparison to normal magnetic PC structure for the same contrast in the wave impedance.
{"title":"Role of wave impedance in the formation of photonic band gaps in one-dimensional magnetic star wave guide structure","authors":"S. Srivastava, S. K. Srivastava, S. P. Ojha","doi":"10.1109/ELECTRO.2009.5441046","DOIUrl":"https://doi.org/10.1109/ELECTRO.2009.5441046","url":null,"abstract":"The present paper describes the study of reflection properties and role of wave impedance in the formation of photonic band gaps in one-dimensional magnetic star waveguide structure (MSWG). From the analysis of the dispersion characteristics, it is found that in magnetic SWG structure existence of band gaps does not require the contrast in the wave impedance of the constituent materials whereas the contrast in wave impedance is must for the existence of band gap in normal magnetic photonic crystal (MPC) structure. Moreover, magnetic SWG structures show wider photonic band gaps in comparison to normal magnetic PC structure for the same contrast in the wave impedance.","PeriodicalId":149384,"journal":{"name":"2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116688214","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-12-01DOI: 10.1109/ELECTRO.2009.5441060
M. Mukherjee
Extensive simulation experiments are carried out for the first time, to study the effects of photo-irradiation on the high frequency characteristics of III-V hexagonal GaN (Gallium Nitride) based Top-Mounted and Flip-Chip IMPATT oscillators at MM-wave window frequency (140.0 GHz). It is found that the un-illuminated GaN IMPATT is capable of delivering a RF power of 5.6 W with an efficiency of 23.5% at 145.0 GHz. Frequency up-chirping of 6.0 GHz and a degradation of RF power output by almost 15.0 % are further observed in case of photo-illuminated FC IMPATT. The study reveals that compare to pre-dominate electron photocurrent in Top-Mounted IMPATT, photo-generated leakage current dominated by hole in Flip-Chip IMPATT has more pronounced effect on the GaN based device as regards the frequency chirping and decrease of negative conductance and total negative resistance per unit area of the device. The inequality in the magnitudes of electron and hole ionization rates in the Wide Band Gap semiconductor have been found to be correlated with the above results. The study reveals that GaN IMPATT is a potential candidate for replacing conventional IMPATTs at high frequency operation.
{"title":"Hexagonal GaN based photo-irradiated IMPATT devices for application in MM-wave communication systems","authors":"M. Mukherjee","doi":"10.1109/ELECTRO.2009.5441060","DOIUrl":"https://doi.org/10.1109/ELECTRO.2009.5441060","url":null,"abstract":"Extensive simulation experiments are carried out for the first time, to study the effects of photo-irradiation on the high frequency characteristics of III-V hexagonal GaN (Gallium Nitride) based Top-Mounted and Flip-Chip IMPATT oscillators at MM-wave window frequency (140.0 GHz). It is found that the un-illuminated GaN IMPATT is capable of delivering a RF power of 5.6 W with an efficiency of 23.5% at 145.0 GHz. Frequency up-chirping of 6.0 GHz and a degradation of RF power output by almost 15.0 % are further observed in case of photo-illuminated FC IMPATT. The study reveals that compare to pre-dominate electron photocurrent in Top-Mounted IMPATT, photo-generated leakage current dominated by hole in Flip-Chip IMPATT has more pronounced effect on the GaN based device as regards the frequency chirping and decrease of negative conductance and total negative resistance per unit area of the device. The inequality in the magnitudes of electron and hole ionization rates in the Wide Band Gap semiconductor have been found to be correlated with the above results. The study reveals that GaN IMPATT is a potential candidate for replacing conventional IMPATTs at high frequency operation.","PeriodicalId":149384,"journal":{"name":"2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115448566","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-12-01DOI: 10.1109/ELECTRO.2009.5441172
Jobymol Jacob, A. DasGupta, A. Chakravorty
A compact model for silicon germanium heterojunction bipolar transistor based on transient integral charge-control (TICC) relations is presented. Partitioning factors are extracted from the numerically simulated data. A thorough analysis based on the transient and AC results has been carried out for checking the suitability of the model. No convergence problem is observed in transient simulation. The model shows acceptable accuracy in the phase behavior from low frequency up to transit frequency.
{"title":"Transient charge-based model for SiGe HBTs","authors":"Jobymol Jacob, A. DasGupta, A. Chakravorty","doi":"10.1109/ELECTRO.2009.5441172","DOIUrl":"https://doi.org/10.1109/ELECTRO.2009.5441172","url":null,"abstract":"A compact model for silicon germanium heterojunction bipolar transistor based on transient integral charge-control (TICC) relations is presented. Partitioning factors are extracted from the numerically simulated data. A thorough analysis based on the transient and AC results has been carried out for checking the suitability of the model. No convergence problem is observed in transient simulation. The model shows acceptable accuracy in the phase behavior from low frequency up to transit frequency.","PeriodicalId":149384,"journal":{"name":"2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114620675","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-12-01DOI: 10.1109/ELECTRO.2009.5441070
P. K. Basu, G. Sen, B. Mukhopadhyay
Group IV elements and their alloys show poor light emission due to their indirect gap. Application of tensile strain in Ge lowers the Γ valley below the L valleys in bulk as well as in Ge nanowires. We present also our results on direct gap type I alignment showing direct gap at ∼ 0.8 eV in Si1-p-qGep Cq (C ≪4%) active layers with Ge1-x-ySixSny as the barrier. We have chosen a composition to give the critical thickness as high as possible and estimated its absorption coefficients: both fundamental and free carrier, by using theoretical expressions, available data for Ge and suitable interpolation. The linear gain spectra, and transparency carrier density for the chosen heterostructure are then estimated. The threshold current density for an optimized structure may be approximately 300 A/cm2.
{"title":"Feasibilty of laser action in strained Ge and Group IV alloys on Si platform","authors":"P. K. Basu, G. Sen, B. Mukhopadhyay","doi":"10.1109/ELECTRO.2009.5441070","DOIUrl":"https://doi.org/10.1109/ELECTRO.2009.5441070","url":null,"abstract":"Group IV elements and their alloys show poor light emission due to their indirect gap. Application of tensile strain in Ge lowers the Γ valley below the L valleys in bulk as well as in Ge nanowires. We present also our results on direct gap type I alignment showing direct gap at ∼ 0.8 eV in Si<inf>1-p-q</inf>Ge<inf>p</inf> C<inf>q</inf> (C ≪4%) active layers with Ge<inf>1-x-y</inf>Si<inf>x</inf>Sn<inf>y</inf> as the barrier. We have chosen a composition to give the critical thickness as high as possible and estimated its absorption coefficients: both fundamental and free carrier, by using theoretical expressions, available data for Ge and suitable interpolation. The linear gain spectra, and transparency carrier density for the chosen heterostructure are then estimated. The threshold current density for an optimized structure may be approximately 300 A/cm<sup>2</sup>.","PeriodicalId":149384,"journal":{"name":"2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114352857","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-12-01DOI: 10.1109/ELECTRO.2009.5441064
M. Sengupta, S. Chattopadhyay, C. Maiti
In this paper, the effect of channel implantation dose and energy has been studied for the design of nanoscale FinFET devices for high frequency application. It was observed that the threshold voltage of the device may be increased through both implantation dose and energy but the later is preferable because of less carrier scattering. The drain current and the peak cut-off frequency of the device were found to increase either with the decrease in implantation dose or increase in implantation energy.
{"title":"Effect of channel implantation on the design of high frequency nanoscale n-FinFETs","authors":"M. Sengupta, S. Chattopadhyay, C. Maiti","doi":"10.1109/ELECTRO.2009.5441064","DOIUrl":"https://doi.org/10.1109/ELECTRO.2009.5441064","url":null,"abstract":"In this paper, the effect of channel implantation dose and energy has been studied for the design of nanoscale FinFET devices for high frequency application. It was observed that the threshold voltage of the device may be increased through both implantation dose and energy but the later is preferable because of less carrier scattering. The drain current and the peak cut-off frequency of the device were found to increase either with the decrease in implantation dose or increase in implantation energy.","PeriodicalId":149384,"journal":{"name":"2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127301963","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-12-01DOI: 10.1109/ELECTRO.2009.5441091
P. Tilanthe, P. Sharma
The characteristics of a compact antenna with C slot in ground plane are investigated. It achieves wideband functionality through the addition of the C shaped slot in the ground plane of the microstrip antenna. The antenna covers WLAN bands i. e. 2.4GHz and 5.2 GHz. Investigations on the radiation characteristics have also been carried out and the results are presented.
{"title":"A new wide band antenna with C shaped slot in ground plane","authors":"P. Tilanthe, P. Sharma","doi":"10.1109/ELECTRO.2009.5441091","DOIUrl":"https://doi.org/10.1109/ELECTRO.2009.5441091","url":null,"abstract":"The characteristics of a compact antenna with C slot in ground plane are investigated. It achieves wideband functionality through the addition of the C shaped slot in the ground plane of the microstrip antenna. The antenna covers WLAN bands i. e. 2.4GHz and 5.2 GHz. Investigations on the radiation characteristics have also been carried out and the results are presented.","PeriodicalId":149384,"journal":{"name":"2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126370857","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-12-01DOI: 10.1109/ELECTRO.2009.5441134
A. Pandey, R. Prasad, N. S. Rajput
Okra commonly known as lady finger is one of the important vegetable cultivated in India. Today Remote sensing is an important tool for monitoring the crop production. For this purpose we use bistatic microwave scatterometer working at X-band (9.5 GHz). Biomass factor and leaf area index is calculated within this period. Scattering coefficient (s) and their dependence on look angle were analyzed. In this way by using the Biomass, Leaf area index and scattering coefficient an idea is developed which is helpful for radar sensors and also helpful for the production monitoring of this vegetable.
{"title":"Study of vegetable Okra by microwave remote sensing at X- band","authors":"A. Pandey, R. Prasad, N. S. Rajput","doi":"10.1109/ELECTRO.2009.5441134","DOIUrl":"https://doi.org/10.1109/ELECTRO.2009.5441134","url":null,"abstract":"Okra commonly known as lady finger is one of the important vegetable cultivated in India. Today Remote sensing is an important tool for monitoring the crop production. For this purpose we use bistatic microwave scatterometer working at X-band (9.5 GHz). Biomass factor and leaf area index is calculated within this period. Scattering coefficient (s) and their dependence on look angle were analyzed. In this way by using the Biomass, Leaf area index and scattering coefficient an idea is developed which is helpful for radar sensors and also helpful for the production monitoring of this vegetable.","PeriodicalId":149384,"journal":{"name":"2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125072610","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-12-01DOI: 10.1109/ELECTRO.2009.5441142
Saumya Srivastava, A. Singh
This paper deals with the problem of testing methods for testing embedded systems The problem addressed in this paper is about methods for testing whether impletation of system are correct . The problem of testing a system for its correctness deals with the designing of test cases .Test cases for correctness of the system with respect to specifications ,are large in number which makes the testing of embedded system infeasible. Robust testing of embedded system will help in solving this problem .Robust testing can be done by considering specifications as finite state machine.
{"title":"Testing of embedded system using fault modeling","authors":"Saumya Srivastava, A. Singh","doi":"10.1109/ELECTRO.2009.5441142","DOIUrl":"https://doi.org/10.1109/ELECTRO.2009.5441142","url":null,"abstract":"This paper deals with the problem of testing methods for testing embedded systems The problem addressed in this paper is about methods for testing whether impletation of system are correct . The problem of testing a system for its correctness deals with the designing of test cases .Test cases for correctness of the system with respect to specifications ,are large in number which makes the testing of embedded system infeasible. Robust testing of embedded system will help in solving this problem .Robust testing can be done by considering specifications as finite state machine.","PeriodicalId":149384,"journal":{"name":"2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems","volume":"91 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125529555","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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