Pub Date : 2009-12-01DOI: 10.1109/ELECTRO.2009.5441085
A. Gaikwad, Dharmendra Singh, M. Nigam
In through wall imaging (TWI), detection is possible due to dielectric contrasts between target and room environment. Complexity increases if room consists of furniture's and other objects beside desired target. Further detection of desired target becomes complex with the presence of window in back wall of room. Thus in this paper, effect of presence of window in back wall of room is investigated on detection and imaging. A detection technique is proposed in which signal processing technique is applied to extract the target information from clutter signal. A back projection imaging technique is applied to image the target. For this purpose, indigenously a TWI system based on step frequency continuous wave (SFCW) principle is developed in ultra wide band (UWB) range of frequency (i.e., 3.95 GHz to 5.85 GHz), plywood considered as wall and metallic plate is considered as target behind the plywood wall. The results are quite encouraging.
{"title":"Study of effect of room window on through wall imaging in UWB range","authors":"A. Gaikwad, Dharmendra Singh, M. Nigam","doi":"10.1109/ELECTRO.2009.5441085","DOIUrl":"https://doi.org/10.1109/ELECTRO.2009.5441085","url":null,"abstract":"In through wall imaging (TWI), detection is possible due to dielectric contrasts between target and room environment. Complexity increases if room consists of furniture's and other objects beside desired target. Further detection of desired target becomes complex with the presence of window in back wall of room. Thus in this paper, effect of presence of window in back wall of room is investigated on detection and imaging. A detection technique is proposed in which signal processing technique is applied to extract the target information from clutter signal. A back projection imaging technique is applied to image the target. For this purpose, indigenously a TWI system based on step frequency continuous wave (SFCW) principle is developed in ultra wide band (UWB) range of frequency (i.e., 3.95 GHz to 5.85 GHz), plywood considered as wall and metallic plate is considered as target behind the plywood wall. The results are quite encouraging.","PeriodicalId":149384,"journal":{"name":"2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127764785","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-12-01DOI: 10.1109/ELECTRO.2009.5441072
N. Das
Si-based photodetectors play key role in the performance of Si-photonic Devices. Design of high performance Si-detectors for optical communication system is a challenging task. Drawbacks arising from low absorption efficiency due to indirect nature of the band-gap in Si, strain in Ge/Si heterointerfaces, etc are to be overcome with suitable structure/design of the detectors. In this paper, a brief review is given on Si-detectors, such as Si-CMOS, SiGe and Ge-on-Si photodetectors including their fabrication techniques, performance trend with some aspects of modeling.
{"title":"Si-based photodetectors in optical communication","authors":"N. Das","doi":"10.1109/ELECTRO.2009.5441072","DOIUrl":"https://doi.org/10.1109/ELECTRO.2009.5441072","url":null,"abstract":"Si-based photodetectors play key role in the performance of Si-photonic Devices. Design of high performance Si-detectors for optical communication system is a challenging task. Drawbacks arising from low absorption efficiency due to indirect nature of the band-gap in Si, strain in Ge/Si heterointerfaces, etc are to be overcome with suitable structure/design of the detectors. In this paper, a brief review is given on Si-detectors, such as Si-CMOS, SiGe and Ge-on-Si photodetectors including their fabrication techniques, performance trend with some aspects of modeling.","PeriodicalId":149384,"journal":{"name":"2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems","volume":"85 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133155697","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-12-01DOI: 10.1109/ELECTRO.2009.5441036
S. K. Tripathy, M. Hota
In this paper we report the possibility of optical bistable switching in a hybrid magnetic semiconductor. We on the basis of our formulation found that a magnetic semiconductor can be made to behave as a optical bistable switch by suitably controlling the magnetic impurity concentration.
{"title":"Optical bistable switching in a hybrid magnetic semiconductor","authors":"S. K. Tripathy, M. Hota","doi":"10.1109/ELECTRO.2009.5441036","DOIUrl":"https://doi.org/10.1109/ELECTRO.2009.5441036","url":null,"abstract":"In this paper we report the possibility of optical bistable switching in a hybrid magnetic semiconductor. We on the basis of our formulation found that a magnetic semiconductor can be made to behave as a optical bistable switch by suitably controlling the magnetic impurity concentration.","PeriodicalId":149384,"journal":{"name":"2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125701701","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-12-01DOI: 10.1109/ELECTRO.2009.5441179
A. Biswas, Moumita Basak Nath
In this paper, analytical models for threshold voltage Vt and subthreshold slope S for biaxially strained-Si channel nMOSFETs are proposed. Analytical approaches for predicting Vt and S are developed by considering the effect of strain on material and transport parameters, the effect of bandgap narrowing due to heavy channel doping, poly depletion effects and quantum mechanical effects for a wide temperature range 77 to 550 K. Accuracy of models have been verified by comparing analytical results obtained from the proposed model with the reported experimental data. Moreover, the model provides a physical insight for the variation of Vt and S for strained Si/ SiGe MOSFETs over a large temperature range.
{"title":"Influence of temperature on the threshold voltage and subthreshold slope of strained-Si/SiGe MOSFETs with polysilicon gates","authors":"A. Biswas, Moumita Basak Nath","doi":"10.1109/ELECTRO.2009.5441179","DOIUrl":"https://doi.org/10.1109/ELECTRO.2009.5441179","url":null,"abstract":"In this paper, analytical models for threshold voltage Vt and subthreshold slope S for biaxially strained-Si channel nMOSFETs are proposed. Analytical approaches for predicting Vt and S are developed by considering the effect of strain on material and transport parameters, the effect of bandgap narrowing due to heavy channel doping, poly depletion effects and quantum mechanical effects for a wide temperature range 77 to 550 K. Accuracy of models have been verified by comparing analytical results obtained from the proposed model with the reported experimental data. Moreover, the model provides a physical insight for the variation of Vt and S for strained Si/ SiGe MOSFETs over a large temperature range.","PeriodicalId":149384,"journal":{"name":"2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134153027","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-12-01DOI: 10.1109/ELECTRO.2009.5441156
Pratiksha Gehlot, S. Chouhan
A new chip design paradigm Network on Chip (NOC), proposed by many research groups [1], [2] is an important architectural choice for future SOCs. Various proposed Network on Chip (NoC) architecture attempts to address different component level architectures with specific interconnection network topologies and routing techniques, some of the topologies are CLICHE, Folded Torus, BFT, SPIN and Octagon. This research work compares proposed NoC architectures and to evaluate their performance using a simulating tool NS-2. Simulation provides relationship among latency, throughput and packet drop probability for NoC architectures.
{"title":"Performance evaluation of Network on Chip architectures","authors":"Pratiksha Gehlot, S. Chouhan","doi":"10.1109/ELECTRO.2009.5441156","DOIUrl":"https://doi.org/10.1109/ELECTRO.2009.5441156","url":null,"abstract":"A new chip design paradigm Network on Chip (NOC), proposed by many research groups [1], [2] is an important architectural choice for future SOCs. Various proposed Network on Chip (NoC) architecture attempts to address different component level architectures with specific interconnection network topologies and routing techniques, some of the topologies are CLICHE, Folded Torus, BFT, SPIN and Octagon. This research work compares proposed NoC architectures and to evaluate their performance using a simulating tool NS-2. Simulation provides relationship among latency, throughput and packet drop probability for NoC architectures.","PeriodicalId":149384,"journal":{"name":"2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133164556","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-12-01DOI: 10.1109/ELECTRO.2009.5441097
Pratibha Sekra, D. Bhatnagar, V. K. Saxena, J. S. Saini
The radiation performance of a modified single feed circularly polarized elliptical patch microstrip antenna is simulated on glass epoxy FR-4 substrate by applying IE3D simulation software and its performance is compared with that of a conventional elliptical patch antenna. Both edges of geometry parallel to its major axis are truncated and antenna is fed at a point lying on the line making an angle of 45° from the minor axis. The location of feed point on this line and width of truncated parts are optimized to obtain improved circular polarization performance with this structure. The simulated return loss, input impedance, axial ratio variations with frequency for the proposed antenna are reported in this communication. The E and H plane LHCP and RHCP radiation patterns are also presented. It is realized that the impedance bandwidth and axial ratio bandwidth of modified antenna are improved on proposed truncations in the edge.
{"title":"Single feed circularly polarized edge truncated elliptical microstrip antenna","authors":"Pratibha Sekra, D. Bhatnagar, V. K. Saxena, J. S. Saini","doi":"10.1109/ELECTRO.2009.5441097","DOIUrl":"https://doi.org/10.1109/ELECTRO.2009.5441097","url":null,"abstract":"The radiation performance of a modified single feed circularly polarized elliptical patch microstrip antenna is simulated on glass epoxy FR-4 substrate by applying IE3D simulation software and its performance is compared with that of a conventional elliptical patch antenna. Both edges of geometry parallel to its major axis are truncated and antenna is fed at a point lying on the line making an angle of 45° from the minor axis. The location of feed point on this line and width of truncated parts are optimized to obtain improved circular polarization performance with this structure. The simulated return loss, input impedance, axial ratio variations with frequency for the proposed antenna are reported in this communication. The E and H plane LHCP and RHCP radiation patterns are also presented. It is realized that the impedance bandwidth and axial ratio bandwidth of modified antenna are improved on proposed truncations in the edge.","PeriodicalId":149384,"journal":{"name":"2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134002046","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-12-01DOI: 10.1109/ELECTRO.2009.5441119
M. Rai, Chhavi Sharma
Cellular systems are generally encountered with near-far problem. Several power control updating algorithms have been proposed to deal with this problem. One of the commonly used algorithms is proposed by Zander that drives all the mobiles to achieve the system threshold signal to interference ratio (SIR), that is necessary for a mobile to get the access of base station. This algorithm deals with the link gain matrix associated with the system. Removal policy is applied which removes a mobile from the network if it fails achieve threshold value after being given several trials. The system is rebalanced by changing the link gain matrix. This increases the capacity as new incoming users can be served by the system. In this paper, a new power updating algorithm for cellular system is proposed and simulated to show that mobiles converges faster in terms of number of iterations required to get system threshold.
{"title":"Improvement in power updating algorithm in wireless DS-CDMA networks","authors":"M. Rai, Chhavi Sharma","doi":"10.1109/ELECTRO.2009.5441119","DOIUrl":"https://doi.org/10.1109/ELECTRO.2009.5441119","url":null,"abstract":"Cellular systems are generally encountered with near-far problem. Several power control updating algorithms have been proposed to deal with this problem. One of the commonly used algorithms is proposed by Zander that drives all the mobiles to achieve the system threshold signal to interference ratio (SIR), that is necessary for a mobile to get the access of base station. This algorithm deals with the link gain matrix associated with the system. Removal policy is applied which removes a mobile from the network if it fails achieve threshold value after being given several trials. The system is rebalanced by changing the link gain matrix. This increases the capacity as new incoming users can be served by the system. In this paper, a new power updating algorithm for cellular system is proposed and simulated to show that mobiles converges faster in terms of number of iterations required to get system threshold.","PeriodicalId":149384,"journal":{"name":"2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems","volume":"128 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132841177","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-12-01DOI: 10.1109/ELECTRO.2009.5441084
S. Sankaralingam, B. Gupta
A natural progression from the Personal Area Network (PAN) concept is the Body Area Network (BAN). A wearable antenna is an essential part of any Wireless BAN. A microstrip patch radiator is chosen as an example of low-profile wearable antenna, as it can be made conformal for integration into clothing. In this paper, a textile microstrip circular disk antenna for such body centered Wireless Local Area Network (WLAN) has been developed and tested. The conductive combined cotton (65∶35) fabric has been chosen as its substrate material. Thus the suitability of fabric substrate materials for the development of microstrip patch antennas is well demonstrated.
{"title":"A textile antenna for WLAN applications","authors":"S. Sankaralingam, B. Gupta","doi":"10.1109/ELECTRO.2009.5441084","DOIUrl":"https://doi.org/10.1109/ELECTRO.2009.5441084","url":null,"abstract":"A natural progression from the Personal Area Network (PAN) concept is the Body Area Network (BAN). A wearable antenna is an essential part of any Wireless BAN. A microstrip patch radiator is chosen as an example of low-profile wearable antenna, as it can be made conformal for integration into clothing. In this paper, a textile microstrip circular disk antenna for such body centered Wireless Local Area Network (WLAN) has been developed and tested. The conductive combined cotton (65∶35) fabric has been chosen as its substrate material. Thus the suitability of fabric substrate materials for the development of microstrip patch antennas is well demonstrated.","PeriodicalId":149384,"journal":{"name":"2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems","volume":"32 9","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114081524","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-12-01DOI: 10.1109/ELECTRO.2009.5441171
B. N. Kumar, Gaurav Srivastava, A. Verma, K. M. Bhat, S. Chaturvedi, G. Saravanan, R. Muralidharan
This paper describes the study of effect of variation of topological changes on parameters of pseudomorphic HEMTs. Devices with 2 gate fingers, having gate width of 150 µm, source-drain spacing of 4 µm and 3 µm, and with two different gate structures, viz., π and T types were fabricated. On-wafer measurement of S-parameters for different devices was done from 100 MHz to 40 GHz under different bias conditions. Using this data, all the Equivalent Circuit Parameters (ECPs) were then extracted for each device. This method was then used for the calculation of the ECPs of 4 µm and 3 µm spacings, and trends of various parameters were analyzed.
{"title":"Effect of variation of topological changes on the Equivalent Circuit Parameters of pseudomorphic HEMTs","authors":"B. N. Kumar, Gaurav Srivastava, A. Verma, K. M. Bhat, S. Chaturvedi, G. Saravanan, R. Muralidharan","doi":"10.1109/ELECTRO.2009.5441171","DOIUrl":"https://doi.org/10.1109/ELECTRO.2009.5441171","url":null,"abstract":"This paper describes the study of effect of variation of topological changes on parameters of pseudomorphic HEMTs. Devices with 2 gate fingers, having gate width of 150 µm, source-drain spacing of 4 µm and 3 µm, and with two different gate structures, viz., π and T types were fabricated. On-wafer measurement of S-parameters for different devices was done from 100 MHz to 40 GHz under different bias conditions. Using this data, all the Equivalent Circuit Parameters (ECPs) were then extracted for each device. This method was then used for the calculation of the ECPs of 4 µm and 3 µm spacings, and trends of various parameters were analyzed.","PeriodicalId":149384,"journal":{"name":"2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116126400","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-12-01DOI: 10.1109/ELECTRO.2009.5441035
Sanjay Mishra, D. Mohan, A. K. Gupta, M. K. Mridha
Study of singular phases is important for analyzing the wavefront deterioration of laser beams while propagating through strong atmospheric turbulence. Such study is useful to the applications involving the laser propagation and the phase detection systems. Few laser cavity modes inherently possess singular behavior. We report the study of detection of single and multiple phase singularities embedded in the fundamental laser mode. Numerically these vortices have been produced and two interferometric methods were used for the detection. Alternatively singularities could also be detected by measuring local slopes of wavefront employing Shack-Hartmann principle. Comparison of these methods was also discussed.
{"title":"Study of singular phases in laser cavity modes","authors":"Sanjay Mishra, D. Mohan, A. K. Gupta, M. K. Mridha","doi":"10.1109/ELECTRO.2009.5441035","DOIUrl":"https://doi.org/10.1109/ELECTRO.2009.5441035","url":null,"abstract":"Study of singular phases is important for analyzing the wavefront deterioration of laser beams while propagating through strong atmospheric turbulence. Such study is useful to the applications involving the laser propagation and the phase detection systems. Few laser cavity modes inherently possess singular behavior. We report the study of detection of single and multiple phase singularities embedded in the fundamental laser mode. Numerically these vortices have been produced and two interferometric methods were used for the detection. Alternatively singularities could also be detected by measuring local slopes of wavefront employing Shack-Hartmann principle. Comparison of these methods was also discussed.","PeriodicalId":149384,"journal":{"name":"2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems","volume":"79 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115157036","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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