Pub Date : 2000-06-11DOI: 10.1109/MWSYM.2000.862327
D. Farias, F. Rose, J. Selin
An analytical model for the calculation of FET source inductance is presented. This model is based on equations for self and mutual inductance of straight conductors and cylindrical via holes derived from Maxwell's equations. It provides designers with a tool to analytically scale source inductance for different FET structures.
{"title":"Modeling source inductance in FETs","authors":"D. Farias, F. Rose, J. Selin","doi":"10.1109/MWSYM.2000.862327","DOIUrl":"https://doi.org/10.1109/MWSYM.2000.862327","url":null,"abstract":"An analytical model for the calculation of FET source inductance is presented. This model is based on equations for self and mutual inductance of straight conductors and cylindrical via holes derived from Maxwell's equations. It provides designers with a tool to analytically scale source inductance for different FET structures.","PeriodicalId":149404,"journal":{"name":"2000 IEEE MTT-S International Microwave Symposium Digest (Cat. No.00CH37017)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-06-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133775721","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-06-11DOI: 10.1109/MWSYM.2000.862357
Y.C. Chen, M. Barsky, R. Tsai, R. Lai, H. Yen, A. Oki, D. Streit
We have investigated the survivability of our 0.1- and 0.15-/spl mu/m InP HEMT devices and MMIC amplifiers under high input RF drive levels. Input destruction powers as high as 22 and 26 dBm were observed for the 0.1- and 0.15-/spl mu/m MMIC amplifiers, respectively. These results shows that InP HEMT is suitable for many applications even where high survivability levels are required. Analytical analysis and harmonic balanced nonlinear simulations suggest that device destruction be due to large drain-gate voltage swing that exceeds the breakdown voltage under high RF drives. The survivability of an MMIC amplifier depends on its impedance matching and can be improved by using large devices.
{"title":"Survivability of InP HEMT devices and MMICs under high RF input drive","authors":"Y.C. Chen, M. Barsky, R. Tsai, R. Lai, H. Yen, A. Oki, D. Streit","doi":"10.1109/MWSYM.2000.862357","DOIUrl":"https://doi.org/10.1109/MWSYM.2000.862357","url":null,"abstract":"We have investigated the survivability of our 0.1- and 0.15-/spl mu/m InP HEMT devices and MMIC amplifiers under high input RF drive levels. Input destruction powers as high as 22 and 26 dBm were observed for the 0.1- and 0.15-/spl mu/m MMIC amplifiers, respectively. These results shows that InP HEMT is suitable for many applications even where high survivability levels are required. Analytical analysis and harmonic balanced nonlinear simulations suggest that device destruction be due to large drain-gate voltage swing that exceeds the breakdown voltage under high RF drives. The survivability of an MMIC amplifier depends on its impedance matching and can be improved by using large devices.","PeriodicalId":149404,"journal":{"name":"2000 IEEE MTT-S International Microwave Symposium Digest (Cat. No.00CH37017)","volume":"311 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-06-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116623771","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-06-11DOI: 10.1109/MWSYM.2000.860926
Y. Chung, G. Ryu, Daehyun Kim, Jaehak Lee, W. Hong, K. Seo
This paper represents the device parameter influence of GaAs PHEMT with different gate lengths on switching performance and its application in DC-50GHz wide-band SPST monolithic switch ICs. From the characteristic of GaAs PHEMT and monolithic switch, especially, it is proved experimentally that source-to-drain capacitance dependent on gate length is a very important characteristic for improving the isolation performance of GaAs PHEMT switch at high-impedance state.
{"title":"Characterization of source-to-drain capacitance (C/sub ds/) effect of GaAs PHEMT for millimeter wave switch","authors":"Y. Chung, G. Ryu, Daehyun Kim, Jaehak Lee, W. Hong, K. Seo","doi":"10.1109/MWSYM.2000.860926","DOIUrl":"https://doi.org/10.1109/MWSYM.2000.860926","url":null,"abstract":"This paper represents the device parameter influence of GaAs PHEMT with different gate lengths on switching performance and its application in DC-50GHz wide-band SPST monolithic switch ICs. From the characteristic of GaAs PHEMT and monolithic switch, especially, it is proved experimentally that source-to-drain capacitance dependent on gate length is a very important characteristic for improving the isolation performance of GaAs PHEMT switch at high-impedance state.","PeriodicalId":149404,"journal":{"name":"2000 IEEE MTT-S International Microwave Symposium Digest (Cat. No.00CH37017)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-06-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116757920","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-06-11DOI: 10.1109/MWSYM.2000.863262
Tai-Lee Chen, Yu-De Lin
A simple method for exciting the microstrip higher order leaky modes is demonstrated in the paper. Properly arranging narrow slots on the ground plane where the vertical electric fields are small can excite these higher order modes. The experiments of excitation of the second and the third higher order leaky modes are carried out to verify the practicability. It is suitable to develop new microwave device and radiation source, such as applications in multi-beam antenna design.
{"title":"Excitation of the microstrip higher order leaky modes by aperture-coupling method","authors":"Tai-Lee Chen, Yu-De Lin","doi":"10.1109/MWSYM.2000.863262","DOIUrl":"https://doi.org/10.1109/MWSYM.2000.863262","url":null,"abstract":"A simple method for exciting the microstrip higher order leaky modes is demonstrated in the paper. Properly arranging narrow slots on the ground plane where the vertical electric fields are small can excite these higher order modes. The experiments of excitation of the second and the third higher order leaky modes are carried out to verify the practicability. It is suitable to develop new microwave device and radiation source, such as applications in multi-beam antenna design.","PeriodicalId":149404,"journal":{"name":"2000 IEEE MTT-S International Microwave Symposium Digest (Cat. No.00CH37017)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-06-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117045923","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-06-11DOI: 10.1109/MWSYM.2000.861758
D. Andrews, C. Aitchison
The design of microwave octave-band lumped element quadrature couplers is presented, including a 1-2 GHz microstrip implementation example. The design offers a more convenient and cost effective solution to tight coupling problems currently solved using Lange couplers or stripline hybrids.
{"title":"A microwave octave-band lumped element quadrature coupler","authors":"D. Andrews, C. Aitchison","doi":"10.1109/MWSYM.2000.861758","DOIUrl":"https://doi.org/10.1109/MWSYM.2000.861758","url":null,"abstract":"The design of microwave octave-band lumped element quadrature couplers is presented, including a 1-2 GHz microstrip implementation example. The design offers a more convenient and cost effective solution to tight coupling problems currently solved using Lange couplers or stripline hybrids.","PeriodicalId":149404,"journal":{"name":"2000 IEEE MTT-S International Microwave Symposium Digest (Cat. No.00CH37017)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-06-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116154843","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-06-11DOI: 10.1109/MWSYM.2000.862283
G. Tan, Gabriel M. Rebeiz
This paper presents two different planar doubler designs for MM-wave applications. The doublers are fabricated using two Schottky varactor diodes in series for high power operation. The high-Q design (Q=6) results in a conversion loss of 6.4 dB at an output frequency of 72-73 GHz. The low-Q design (Q=1.6) results in a conversion loss of 9.6/spl plusmn/0.7 dB from 64-78 GHz at -2 V bias, and delivers 71 mW at 74 GHz for an input power of 490 mW (conversion loss of 8.4 dB, at optimal bias of -7 V). The output power shows no sign of saturation, and is limited to 71 mW due to the input source power. The results are quoted "on-chip" and are state of the art for MM-wave planar multipliers. The application areas are in automotive collision avoidance radars and MM-wave communication systems.
{"title":"High-power millimeter-wave planar doublers","authors":"G. Tan, Gabriel M. Rebeiz","doi":"10.1109/MWSYM.2000.862283","DOIUrl":"https://doi.org/10.1109/MWSYM.2000.862283","url":null,"abstract":"This paper presents two different planar doubler designs for MM-wave applications. The doublers are fabricated using two Schottky varactor diodes in series for high power operation. The high-Q design (Q=6) results in a conversion loss of 6.4 dB at an output frequency of 72-73 GHz. The low-Q design (Q=1.6) results in a conversion loss of 9.6/spl plusmn/0.7 dB from 64-78 GHz at -2 V bias, and delivers 71 mW at 74 GHz for an input power of 490 mW (conversion loss of 8.4 dB, at optimal bias of -7 V). The output power shows no sign of saturation, and is limited to 71 mW due to the input source power. The results are quoted \"on-chip\" and are state of the art for MM-wave planar multipliers. The application areas are in automotive collision avoidance radars and MM-wave communication systems.","PeriodicalId":149404,"journal":{"name":"2000 IEEE MTT-S International Microwave Symposium Digest (Cat. No.00CH37017)","volume":"179 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-06-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114878301","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-06-11DOI: 10.1109/MWSYM.2000.863577
H. Barth
A high-Q circular waveguide cavity is used in a feedback configuration consisting of a low noise amplifier (LNA), a medium power amplifier (MPA) in series and a phase shifter and bandpass filter to select the right resonant mode. Output power is about 6 mW. Short term stability is -130 dBe at 10 kHz offset frequency with 20 dB/following decades. Temperature stability is 40 kHz/centigrade. The center frequency is strongly dependent on the resonant frequency of the resonator, in this case it was adjusted to 32.4 GHz. The phase stability is easy to adjust while monitoring the loop by a special coupling configuration.
{"title":"A very high-Q-feedback oscillator at 33 GHz using MMMIC-amplifiers","authors":"H. Barth","doi":"10.1109/MWSYM.2000.863577","DOIUrl":"https://doi.org/10.1109/MWSYM.2000.863577","url":null,"abstract":"A high-Q circular waveguide cavity is used in a feedback configuration consisting of a low noise amplifier (LNA), a medium power amplifier (MPA) in series and a phase shifter and bandpass filter to select the right resonant mode. Output power is about 6 mW. Short term stability is -130 dBe at 10 kHz offset frequency with 20 dB/following decades. Temperature stability is 40 kHz/centigrade. The center frequency is strongly dependent on the resonant frequency of the resonator, in this case it was adjusted to 32.4 GHz. The phase stability is easy to adjust while monitoring the loop by a special coupling configuration.","PeriodicalId":149404,"journal":{"name":"2000 IEEE MTT-S International Microwave Symposium Digest (Cat. No.00CH37017)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-06-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122005694","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-06-11DOI: 10.1109/MWSYM.2000.863536
W. Simon, R. Kulke, A. Wien, M. Rittweger, I. Wolff, A. Girard, J. Bertinet
Multilayer LTCC substrates with screen printed conductors are considered as a key technology for coming RF wireless communication and automotive applications. Small but expensive MMICs should be integrated in a much cheaper LTCC environment to become a multichip module (MCM). Interconnects between the environmental waveguides and the integrated chips have been designed, optimized, fabricated and evaluated by the authors, which are partners in the European R&D project RAMP.
{"title":"Interconnects and transitions in multilayer LTCC multichip modules for 24 GHz ISM-band applications","authors":"W. Simon, R. Kulke, A. Wien, M. Rittweger, I. Wolff, A. Girard, J. Bertinet","doi":"10.1109/MWSYM.2000.863536","DOIUrl":"https://doi.org/10.1109/MWSYM.2000.863536","url":null,"abstract":"Multilayer LTCC substrates with screen printed conductors are considered as a key technology for coming RF wireless communication and automotive applications. Small but expensive MMICs should be integrated in a much cheaper LTCC environment to become a multichip module (MCM). Interconnects between the environmental waveguides and the integrated chips have been designed, optimized, fabricated and evaluated by the authors, which are partners in the European R&D project RAMP.","PeriodicalId":149404,"journal":{"name":"2000 IEEE MTT-S International Microwave Symposium Digest (Cat. No.00CH37017)","volume":"166 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-06-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123533591","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-06-11DOI: 10.1109/MWSYM.2000.860955
T. Namiki
We previously introduced an unconditionally stable FDTD algorithm for a two-dimensional TE wave. This algorithm is based on the alternating-direction implicit (ADI) method, so we have called this new algorithm the ADI-FDTD method. We analytically and numerically verified that the algorithm of this method is free from the Courant-Friedrich-Levy condition restraint. In this paper, we extend this approach to a full three-dimensional wave. Numerical formulations are presented and simulation results are compared to those using the conventional FDTD method.
{"title":"Unconditionally stable FDTD algorithm for solving three-dimensional Maxwell's equations","authors":"T. Namiki","doi":"10.1109/MWSYM.2000.860955","DOIUrl":"https://doi.org/10.1109/MWSYM.2000.860955","url":null,"abstract":"We previously introduced an unconditionally stable FDTD algorithm for a two-dimensional TE wave. This algorithm is based on the alternating-direction implicit (ADI) method, so we have called this new algorithm the ADI-FDTD method. We analytically and numerically verified that the algorithm of this method is free from the Courant-Friedrich-Levy condition restraint. In this paper, we extend this approach to a full three-dimensional wave. Numerical formulations are presented and simulation results are compared to those using the conventional FDTD method.","PeriodicalId":149404,"journal":{"name":"2000 IEEE MTT-S International Microwave Symposium Digest (Cat. No.00CH37017)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-06-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125330513","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-06-11DOI: 10.1109/MWSYM.2000.860989
H. Kim, Sanghwa Jung, Jaehyoung Park, C. Baek, Yong-Kweon Kim, Y. Kwon
A new micromachined overlay CPW with the edges of the center conductor partially elevated and overlapped with the ground, is developed to achieve low loss over wide impedance ranges. Overlay CPW helped to reduce conductor loss by reducing field concentration and current crowding at the edges of the signal lines. It also offered a screening effect from the substrate losses by concentrating the electric field between the conductor plates. For comparison, three different CPW structures were simulated and fabricated on glass substrates. The overlay CPW showed the largest impedance range and the lowest loss. The overlay CPW using MEMS technology is a good candidate for a uniplanar transmission line medium at mm-wave frequencies.
{"title":"A new micromachined overlap CPW structure with low attenuation over wide impedance ranges","authors":"H. Kim, Sanghwa Jung, Jaehyoung Park, C. Baek, Yong-Kweon Kim, Y. Kwon","doi":"10.1109/MWSYM.2000.860989","DOIUrl":"https://doi.org/10.1109/MWSYM.2000.860989","url":null,"abstract":"A new micromachined overlay CPW with the edges of the center conductor partially elevated and overlapped with the ground, is developed to achieve low loss over wide impedance ranges. Overlay CPW helped to reduce conductor loss by reducing field concentration and current crowding at the edges of the signal lines. It also offered a screening effect from the substrate losses by concentrating the electric field between the conductor plates. For comparison, three different CPW structures were simulated and fabricated on glass substrates. The overlay CPW showed the largest impedance range and the lowest loss. The overlay CPW using MEMS technology is a good candidate for a uniplanar transmission line medium at mm-wave frequencies.","PeriodicalId":149404,"journal":{"name":"2000 IEEE MTT-S International Microwave Symposium Digest (Cat. No.00CH37017)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-06-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124457358","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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