Pub Date : 2000-06-11DOI: 10.1109/MWSYM.2000.863511
A. Vander Vorst, M. D. Taurisano, B. Stockbroeckx
Guidelines for limiting EM exposure provide protection against known adverse health effects. Biological effects, on the other hand, may or may not result in an adverse health effect. Main biological effects are reviewed: nervous system, cellular level, and molecular level. Some attention is given to devices affecting eye, ear, and heart. PW and ELF modulation are compared with CW fields. The influence of the near-field is discussed. There is a serious concern among the population in Europe about possible adverse biological effects due to GSM base stations. Quite surprisingly however, there is no concern about TV and FM exposure. The question of the "microwave syndrome" raises again. Low intensity exposure is discussed. Recommendations are analyzed in detail. Health issues are reviewed. Main references are given.
{"title":"Cellular telephones: hazards or not?","authors":"A. Vander Vorst, M. D. Taurisano, B. Stockbroeckx","doi":"10.1109/MWSYM.2000.863511","DOIUrl":"https://doi.org/10.1109/MWSYM.2000.863511","url":null,"abstract":"Guidelines for limiting EM exposure provide protection against known adverse health effects. Biological effects, on the other hand, may or may not result in an adverse health effect. Main biological effects are reviewed: nervous system, cellular level, and molecular level. Some attention is given to devices affecting eye, ear, and heart. PW and ELF modulation are compared with CW fields. The influence of the near-field is discussed. There is a serious concern among the population in Europe about possible adverse biological effects due to GSM base stations. Quite surprisingly however, there is no concern about TV and FM exposure. The question of the \"microwave syndrome\" raises again. Low intensity exposure is discussed. Recommendations are analyzed in detail. Health issues are reviewed. Main references are given.","PeriodicalId":149404,"journal":{"name":"2000 IEEE MTT-S International Microwave Symposium Digest (Cat. No.00CH37017)","volume":"40 1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-06-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133070184","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-06-11DOI: 10.1109/MWSYM.2000.863290
F.X. Sinnesbichler, G. Olbrich
Accurate large-signal modeling is a prerequisite for any effective nonlinear circuit design. We present a novel large signal model for SiGe HBTs that accurately describes the electrical and thermal behavior of the devices from DC to 40 GHz, covering the entire range of bias conditions. It combines the Gummel-Poon model with elements of the VBIC and the HICUM models as well as with specific extensions for SiGe HBTs. The model, which has been implemented into commercial circuit simulation programs, is validated by the excellent agreement of measured and simulated data of millimeter-wave oscillators.
{"title":"Accurate large-signal modeling of SiGe HBTs","authors":"F.X. Sinnesbichler, G. Olbrich","doi":"10.1109/MWSYM.2000.863290","DOIUrl":"https://doi.org/10.1109/MWSYM.2000.863290","url":null,"abstract":"Accurate large-signal modeling is a prerequisite for any effective nonlinear circuit design. We present a novel large signal model for SiGe HBTs that accurately describes the electrical and thermal behavior of the devices from DC to 40 GHz, covering the entire range of bias conditions. It combines the Gummel-Poon model with elements of the VBIC and the HICUM models as well as with specific extensions for SiGe HBTs. The model, which has been implemented into commercial circuit simulation programs, is validated by the excellent agreement of measured and simulated data of millimeter-wave oscillators.","PeriodicalId":149404,"journal":{"name":"2000 IEEE MTT-S International Microwave Symposium Digest (Cat. No.00CH37017)","volume":"75 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-06-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124869794","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-06-11DOI: 10.1109/MWSYM.2000.860928
C. Rauscher
The tunable channelized active notch filter presented distinguishes itself through its ability to maintain forward signal flow in its three parallel-connected branches without an amplifier in the one branch that determines passband performance, resulting in extremely low signal distortion and very low noise levels at passband frequencies. The practicability of the new approach has been experimentally verified with a filter whose 40-dB-deep notch tunes, with the help of varactors, from 9.5 to 10.5 GHz.
{"title":"A tunable X-band active notch filter with low-distortion passband response","authors":"C. Rauscher","doi":"10.1109/MWSYM.2000.860928","DOIUrl":"https://doi.org/10.1109/MWSYM.2000.860928","url":null,"abstract":"The tunable channelized active notch filter presented distinguishes itself through its ability to maintain forward signal flow in its three parallel-connected branches without an amplifier in the one branch that determines passband performance, resulting in extremely low signal distortion and very low noise levels at passband frequencies. The practicability of the new approach has been experimentally verified with a filter whose 40-dB-deep notch tunes, with the help of varactors, from 9.5 to 10.5 GHz.","PeriodicalId":149404,"journal":{"name":"2000 IEEE MTT-S International Microwave Symposium Digest (Cat. No.00CH37017)","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-06-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124884079","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-06-11DOI: 10.1109/MWSYM.2000.861760
D. Kholodniak, G. Kalinin, E. Vernoslova, I. Vendik
Enlarging the operating frequency band of 0-dB directional couplers by using branch-line structures of a special type is discussed. Analysis of the basic configuration by the even-odd mode decomposition technique is performed. An experimental verification is presented.
{"title":"Wideband 0-dB branch-line directional couplers","authors":"D. Kholodniak, G. Kalinin, E. Vernoslova, I. Vendik","doi":"10.1109/MWSYM.2000.861760","DOIUrl":"https://doi.org/10.1109/MWSYM.2000.861760","url":null,"abstract":"Enlarging the operating frequency band of 0-dB directional couplers by using branch-line structures of a special type is discussed. Analysis of the basic configuration by the even-odd mode decomposition technique is performed. An experimental verification is presented.","PeriodicalId":149404,"journal":{"name":"2000 IEEE MTT-S International Microwave Symposium Digest (Cat. No.00CH37017)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-06-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134193691","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-06-11DOI: 10.1109/MWSYM.2000.860921
Sergio P. Pacheco, L. Katehi, Clark T, C. Nguyen
Low-loss microwave microelectromechanical systems (MEMS) shunt switches are reported that utilize highly compliant serpentine spring folded suspensions together with large area capacitive actuators to achieve low actuation voltages while maintaining sufficient off-state isolation. The RF MEMS switches were fabricated via a surface micromachining process using P12545 polyimide as the sacrificial layer. The switch structure was composed of electroplated nickel and the serpentine folded suspensions had a varying number of meanders from 1 to 5. DC measurements indicate actuation voltages as low as 9 V with an on-to-off capacitance ratio of 48. Power handling measurement results showed no "self-biasing" or failure of the MEMS switches for power levels up to 6.6 W. RF measurements demonstrate an isolation of -26 dB at 40 GHz.
{"title":"Design of low actuation voltage RF MEMS switch","authors":"Sergio P. Pacheco, L. Katehi, Clark T, C. Nguyen","doi":"10.1109/MWSYM.2000.860921","DOIUrl":"https://doi.org/10.1109/MWSYM.2000.860921","url":null,"abstract":"Low-loss microwave microelectromechanical systems (MEMS) shunt switches are reported that utilize highly compliant serpentine spring folded suspensions together with large area capacitive actuators to achieve low actuation voltages while maintaining sufficient off-state isolation. The RF MEMS switches were fabricated via a surface micromachining process using P12545 polyimide as the sacrificial layer. The switch structure was composed of electroplated nickel and the serpentine folded suspensions had a varying number of meanders from 1 to 5. DC measurements indicate actuation voltages as low as 9 V with an on-to-off capacitance ratio of 48. Power handling measurement results showed no \"self-biasing\" or failure of the MEMS switches for power levels up to 6.6 W. RF measurements demonstrate an isolation of -26 dB at 40 GHz.","PeriodicalId":149404,"journal":{"name":"2000 IEEE MTT-S International Microwave Symposium Digest (Cat. No.00CH37017)","volume":"312 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-06-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133789063","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-06-11DOI: 10.1109/MWSYM.2000.861067
D. Schreurs, E. Vandamme, S. Vandenberghe, G. Carchon, B. Nauwelaers
Non-linear MOSFET models are mostly indirectly derived from DC, C-V and S-parameter measurements. We present two accurate modelling techniques that directly determine the MOSFET state-functions from high-frequency vectorial large-signal measurements. The parameter optimisation method quickly generates models for specific applications, while the extraction method is preferred to obtain general models.
{"title":"Applicability of non-linear modelling methods based on vectorial large-signal measurements to MOSFETs","authors":"D. Schreurs, E. Vandamme, S. Vandenberghe, G. Carchon, B. Nauwelaers","doi":"10.1109/MWSYM.2000.861067","DOIUrl":"https://doi.org/10.1109/MWSYM.2000.861067","url":null,"abstract":"Non-linear MOSFET models are mostly indirectly derived from DC, C-V and S-parameter measurements. We present two accurate modelling techniques that directly determine the MOSFET state-functions from high-frequency vectorial large-signal measurements. The parameter optimisation method quickly generates models for specific applications, while the extraction method is preferred to obtain general models.","PeriodicalId":149404,"journal":{"name":"2000 IEEE MTT-S International Microwave Symposium Digest (Cat. No.00CH37017)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-06-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133845435","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-06-11DOI: 10.1109/MWSYM.2000.862369
V. Hietala, S. Casalnuovo, E. Heller, J. Wendt, G. Frye-Mason, A. Baca
A four-channel surface acoustic wave (SAW) chemical sensor array with associated RF electronics is monolithically integrated onto one GaAs IC. The sensor operates at 690 MHz from an on-chip SAW based oscillator and provides simple DC voltage outputs by using integrated phase detectors. This sensor array represents a significant advance in microsensor technology offering miniaturization, increased chemical selectivity, simplified system assembly, improved sensitivity, and inherent temperature compensation.
{"title":"Monolithic GaAs surface acoustic wave chemical microsensor array","authors":"V. Hietala, S. Casalnuovo, E. Heller, J. Wendt, G. Frye-Mason, A. Baca","doi":"10.1109/MWSYM.2000.862369","DOIUrl":"https://doi.org/10.1109/MWSYM.2000.862369","url":null,"abstract":"A four-channel surface acoustic wave (SAW) chemical sensor array with associated RF electronics is monolithically integrated onto one GaAs IC. The sensor operates at 690 MHz from an on-chip SAW based oscillator and provides simple DC voltage outputs by using integrated phase detectors. This sensor array represents a significant advance in microsensor technology offering miniaturization, increased chemical selectivity, simplified system assembly, improved sensitivity, and inherent temperature compensation.","PeriodicalId":149404,"journal":{"name":"2000 IEEE MTT-S International Microwave Symposium Digest (Cat. No.00CH37017)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-06-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133345975","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-06-11DOI: 10.1109/MWSYM.2000.862331
H. Henri, Six Gonzague, V. Matthieu, C. Alain, D. Gilles
The properties of transmission lines on low-resistivity silicon substrate (/spl rho/=10 /spl Omega/.cm) are investigated. Coplanar lines on silicon substrate with a 10 /spl mu/m dielectric film show that losses of 0.6 dB/mm can be obtained at 50 GHz. A new embedded ultra-low loss coplanar line is proposed, with a broad interval of characteristic impedance.
{"title":"Ultra low loss transmission lines on low resistivity silicon substrate","authors":"H. Henri, Six Gonzague, V. Matthieu, C. Alain, D. Gilles","doi":"10.1109/MWSYM.2000.862331","DOIUrl":"https://doi.org/10.1109/MWSYM.2000.862331","url":null,"abstract":"The properties of transmission lines on low-resistivity silicon substrate (/spl rho/=10 /spl Omega/.cm) are investigated. Coplanar lines on silicon substrate with a 10 /spl mu/m dielectric film show that losses of 0.6 dB/mm can be obtained at 50 GHz. A new embedded ultra-low loss coplanar line is proposed, with a broad interval of characteristic impedance.","PeriodicalId":149404,"journal":{"name":"2000 IEEE MTT-S International Microwave Symposium Digest (Cat. No.00CH37017)","volume":"242 ","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-06-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133912174","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-06-11DOI: 10.1109/MWSYM.2000.863584
M. R. Murti, L. Yoo, A. Raghavan, S. Nuttinck, J. Laskar, J. Bautista, R. Lai
In this paper, we present the small-signal and noise modeling of InP/ln/sub 0.8/Ga/sub 0.2/As HEMTs at cryogenic temperatures. The effect of various physical mechanisms influencing the small-signal parameters, especially the RF transconductance and RF output resistance and their temperature dependence are discussed in detail. Accurate on-wafer noise parameter measurements are carried out on InP HEMTs from 300 K to 18 K and the variation of the equivalent noise temperatures of drain and source (T/sub d/ and T/sub g/) are modeled against temperature. A cryogenic LNA in the Ka-band with a noise temperature of 10 K has been demonstrated.
{"title":"Temperature-dependent noise parameters and modeling of InP/InAlAs/InGaAs HEMTs","authors":"M. R. Murti, L. Yoo, A. Raghavan, S. Nuttinck, J. Laskar, J. Bautista, R. Lai","doi":"10.1109/MWSYM.2000.863584","DOIUrl":"https://doi.org/10.1109/MWSYM.2000.863584","url":null,"abstract":"In this paper, we present the small-signal and noise modeling of InP/ln/sub 0.8/Ga/sub 0.2/As HEMTs at cryogenic temperatures. The effect of various physical mechanisms influencing the small-signal parameters, especially the RF transconductance and RF output resistance and their temperature dependence are discussed in detail. Accurate on-wafer noise parameter measurements are carried out on InP HEMTs from 300 K to 18 K and the variation of the equivalent noise temperatures of drain and source (T/sub d/ and T/sub g/) are modeled against temperature. A cryogenic LNA in the Ka-band with a noise temperature of 10 K has been demonstrated.","PeriodicalId":149404,"journal":{"name":"2000 IEEE MTT-S International Microwave Symposium Digest (Cat. No.00CH37017)","volume":"376 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-06-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133307853","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-06-11DOI: 10.1109/MWSYM.2000.862315
R. Logan
Theoretical and experimental investigations are presented for a technique to synthesize signals with high phase stability from 1 GHz to 94 GHz by injection-locking two DFB diode lasers to individual modes of an actively mode-locked laser. An application is demonstrated in a photonic frequency-converting system at frequencies up to 94 GHz.
{"title":"All-optical heterodyne RF signal generation using a mode-locked-laser frequency comb: theory and experiments","authors":"R. Logan","doi":"10.1109/MWSYM.2000.862315","DOIUrl":"https://doi.org/10.1109/MWSYM.2000.862315","url":null,"abstract":"Theoretical and experimental investigations are presented for a technique to synthesize signals with high phase stability from 1 GHz to 94 GHz by injection-locking two DFB diode lasers to individual modes of an actively mode-locked laser. An application is demonstrated in a photonic frequency-converting system at frequencies up to 94 GHz.","PeriodicalId":149404,"journal":{"name":"2000 IEEE MTT-S International Microwave Symposium Digest (Cat. No.00CH37017)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-06-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132676223","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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