Pub Date : 2000-06-11DOI: 10.1109/MWSYM.2000.863511
A. Vander Vorst, M. D. Taurisano, B. Stockbroeckx
Guidelines for limiting EM exposure provide protection against known adverse health effects. Biological effects, on the other hand, may or may not result in an adverse health effect. Main biological effects are reviewed: nervous system, cellular level, and molecular level. Some attention is given to devices affecting eye, ear, and heart. PW and ELF modulation are compared with CW fields. The influence of the near-field is discussed. There is a serious concern among the population in Europe about possible adverse biological effects due to GSM base stations. Quite surprisingly however, there is no concern about TV and FM exposure. The question of the "microwave syndrome" raises again. Low intensity exposure is discussed. Recommendations are analyzed in detail. Health issues are reviewed. Main references are given.
{"title":"Cellular telephones: hazards or not?","authors":"A. Vander Vorst, M. D. Taurisano, B. Stockbroeckx","doi":"10.1109/MWSYM.2000.863511","DOIUrl":"https://doi.org/10.1109/MWSYM.2000.863511","url":null,"abstract":"Guidelines for limiting EM exposure provide protection against known adverse health effects. Biological effects, on the other hand, may or may not result in an adverse health effect. Main biological effects are reviewed: nervous system, cellular level, and molecular level. Some attention is given to devices affecting eye, ear, and heart. PW and ELF modulation are compared with CW fields. The influence of the near-field is discussed. There is a serious concern among the population in Europe about possible adverse biological effects due to GSM base stations. Quite surprisingly however, there is no concern about TV and FM exposure. The question of the \"microwave syndrome\" raises again. Low intensity exposure is discussed. Recommendations are analyzed in detail. Health issues are reviewed. Main references are given.","PeriodicalId":149404,"journal":{"name":"2000 IEEE MTT-S International Microwave Symposium Digest (Cat. No.00CH37017)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2000-06-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133070184","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-06-11DOI: 10.1109/MWSYM.2000.861789
Byung-Wook Song, Sung-Jin Kim, Hai-Young Lee
Novel vertical integrated transformers using bondwires are proposed and fabricated for low-cost and high performance MMICs. The new bondwire transformers are characterized experimentally in a wide frequency range from 1 to 20 GHz. The new transformers show lower power loss due to small ohmic loss of the gold bondwires and wide bandwidth compared to those of the planar spiral transformer.
{"title":"Vertical integrated transformer using bondwires for MMICs","authors":"Byung-Wook Song, Sung-Jin Kim, Hai-Young Lee","doi":"10.1109/MWSYM.2000.861789","DOIUrl":"https://doi.org/10.1109/MWSYM.2000.861789","url":null,"abstract":"Novel vertical integrated transformers using bondwires are proposed and fabricated for low-cost and high performance MMICs. The new bondwire transformers are characterized experimentally in a wide frequency range from 1 to 20 GHz. The new transformers show lower power loss due to small ohmic loss of the gold bondwires and wide bandwidth compared to those of the planar spiral transformer.","PeriodicalId":149404,"journal":{"name":"2000 IEEE MTT-S International Microwave Symposium Digest (Cat. No.00CH37017)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2000-06-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114464716","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-06-11DOI: 10.1109/MWSYM.2000.862283
G. Tan, Gabriel M. Rebeiz
This paper presents two different planar doubler designs for MM-wave applications. The doublers are fabricated using two Schottky varactor diodes in series for high power operation. The high-Q design (Q=6) results in a conversion loss of 6.4 dB at an output frequency of 72-73 GHz. The low-Q design (Q=1.6) results in a conversion loss of 9.6/spl plusmn/0.7 dB from 64-78 GHz at -2 V bias, and delivers 71 mW at 74 GHz for an input power of 490 mW (conversion loss of 8.4 dB, at optimal bias of -7 V). The output power shows no sign of saturation, and is limited to 71 mW due to the input source power. The results are quoted "on-chip" and are state of the art for MM-wave planar multipliers. The application areas are in automotive collision avoidance radars and MM-wave communication systems.
{"title":"High-power millimeter-wave planar doublers","authors":"G. Tan, Gabriel M. Rebeiz","doi":"10.1109/MWSYM.2000.862283","DOIUrl":"https://doi.org/10.1109/MWSYM.2000.862283","url":null,"abstract":"This paper presents two different planar doubler designs for MM-wave applications. The doublers are fabricated using two Schottky varactor diodes in series for high power operation. The high-Q design (Q=6) results in a conversion loss of 6.4 dB at an output frequency of 72-73 GHz. The low-Q design (Q=1.6) results in a conversion loss of 9.6/spl plusmn/0.7 dB from 64-78 GHz at -2 V bias, and delivers 71 mW at 74 GHz for an input power of 490 mW (conversion loss of 8.4 dB, at optimal bias of -7 V). The output power shows no sign of saturation, and is limited to 71 mW due to the input source power. The results are quoted \"on-chip\" and are state of the art for MM-wave planar multipliers. The application areas are in automotive collision avoidance radars and MM-wave communication systems.","PeriodicalId":149404,"journal":{"name":"2000 IEEE MTT-S International Microwave Symposium Digest (Cat. No.00CH37017)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2000-06-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114878301","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-06-11DOI: 10.1109/MWSYM.2000.861758
D. Andrews, C. Aitchison
The design of microwave octave-band lumped element quadrature couplers is presented, including a 1-2 GHz microstrip implementation example. The design offers a more convenient and cost effective solution to tight coupling problems currently solved using Lange couplers or stripline hybrids.
{"title":"A microwave octave-band lumped element quadrature coupler","authors":"D. Andrews, C. Aitchison","doi":"10.1109/MWSYM.2000.861758","DOIUrl":"https://doi.org/10.1109/MWSYM.2000.861758","url":null,"abstract":"The design of microwave octave-band lumped element quadrature couplers is presented, including a 1-2 GHz microstrip implementation example. The design offers a more convenient and cost effective solution to tight coupling problems currently solved using Lange couplers or stripline hybrids.","PeriodicalId":149404,"journal":{"name":"2000 IEEE MTT-S International Microwave Symposium Digest (Cat. No.00CH37017)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2000-06-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116154843","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-06-11DOI: 10.1109/MWSYM.2000.860989
H. Kim, Sanghwa Jung, Jaehyoung Park, C. Baek, Yong-Kweon Kim, Y. Kwon
A new micromachined overlay CPW with the edges of the center conductor partially elevated and overlapped with the ground, is developed to achieve low loss over wide impedance ranges. Overlay CPW helped to reduce conductor loss by reducing field concentration and current crowding at the edges of the signal lines. It also offered a screening effect from the substrate losses by concentrating the electric field between the conductor plates. For comparison, three different CPW structures were simulated and fabricated on glass substrates. The overlay CPW showed the largest impedance range and the lowest loss. The overlay CPW using MEMS technology is a good candidate for a uniplanar transmission line medium at mm-wave frequencies.
{"title":"A new micromachined overlap CPW structure with low attenuation over wide impedance ranges","authors":"H. Kim, Sanghwa Jung, Jaehyoung Park, C. Baek, Yong-Kweon Kim, Y. Kwon","doi":"10.1109/MWSYM.2000.860989","DOIUrl":"https://doi.org/10.1109/MWSYM.2000.860989","url":null,"abstract":"A new micromachined overlay CPW with the edges of the center conductor partially elevated and overlapped with the ground, is developed to achieve low loss over wide impedance ranges. Overlay CPW helped to reduce conductor loss by reducing field concentration and current crowding at the edges of the signal lines. It also offered a screening effect from the substrate losses by concentrating the electric field between the conductor plates. For comparison, three different CPW structures were simulated and fabricated on glass substrates. The overlay CPW showed the largest impedance range and the lowest loss. The overlay CPW using MEMS technology is a good candidate for a uniplanar transmission line medium at mm-wave frequencies.","PeriodicalId":149404,"journal":{"name":"2000 IEEE MTT-S International Microwave Symposium Digest (Cat. No.00CH37017)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2000-06-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124457358","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-06-11DOI: 10.1109/MWSYM.2000.863275
A. Leven, V. Hurm, W. Bronner, K. Kohler, H. Walcher, R. Kiefer, J. Fleissner, J. Rosenzweig, M. Schlechtweg
A 40 GHz bandwidth, 1.55 /spl mu/m wavelength photoreceiver for high-speed digital and microwave-via-fiber applications is presented. The photoreceiver consists of a GaInAs/AlGaInAs/AlInAs multimode waveguide photodiode flip-chip bonded on GaAs-based pseudomorphic HEMT distributed amplifier. The overall conversion gain is as high as 167 V/W.
{"title":"40 GHz broadband optical receiver combining a multimode waveguide photodiode flip-chip mounted on a GaAs-based HEMT distributed amplifier","authors":"A. Leven, V. Hurm, W. Bronner, K. Kohler, H. Walcher, R. Kiefer, J. Fleissner, J. Rosenzweig, M. Schlechtweg","doi":"10.1109/MWSYM.2000.863275","DOIUrl":"https://doi.org/10.1109/MWSYM.2000.863275","url":null,"abstract":"A 40 GHz bandwidth, 1.55 /spl mu/m wavelength photoreceiver for high-speed digital and microwave-via-fiber applications is presented. The photoreceiver consists of a GaInAs/AlGaInAs/AlInAs multimode waveguide photodiode flip-chip bonded on GaAs-based pseudomorphic HEMT distributed amplifier. The overall conversion gain is as high as 167 V/W.","PeriodicalId":149404,"journal":{"name":"2000 IEEE MTT-S International Microwave Symposium Digest (Cat. No.00CH37017)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2000-06-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124793441","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-06-11DOI: 10.1109/MWSYM.2000.863290
F.X. Sinnesbichler, G. Olbrich
Accurate large-signal modeling is a prerequisite for any effective nonlinear circuit design. We present a novel large signal model for SiGe HBTs that accurately describes the electrical and thermal behavior of the devices from DC to 40 GHz, covering the entire range of bias conditions. It combines the Gummel-Poon model with elements of the VBIC and the HICUM models as well as with specific extensions for SiGe HBTs. The model, which has been implemented into commercial circuit simulation programs, is validated by the excellent agreement of measured and simulated data of millimeter-wave oscillators.
{"title":"Accurate large-signal modeling of SiGe HBTs","authors":"F.X. Sinnesbichler, G. Olbrich","doi":"10.1109/MWSYM.2000.863290","DOIUrl":"https://doi.org/10.1109/MWSYM.2000.863290","url":null,"abstract":"Accurate large-signal modeling is a prerequisite for any effective nonlinear circuit design. We present a novel large signal model for SiGe HBTs that accurately describes the electrical and thermal behavior of the devices from DC to 40 GHz, covering the entire range of bias conditions. It combines the Gummel-Poon model with elements of the VBIC and the HICUM models as well as with specific extensions for SiGe HBTs. The model, which has been implemented into commercial circuit simulation programs, is validated by the excellent agreement of measured and simulated data of millimeter-wave oscillators.","PeriodicalId":149404,"journal":{"name":"2000 IEEE MTT-S International Microwave Symposium Digest (Cat. No.00CH37017)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2000-06-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124869794","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-06-11DOI: 10.1109/MWSYM.2000.861121
B.B. Baturov, A.V. Vinogradnyi, G.A. Koshevarov, L. Melnikov, A.N. Korolyev, P.M. Meleshkevich, V.I. Poognin
A high-power broadband transmitter (PTX) operating at the longer-wave part of the S-band is discussed. In the present paper principal attention is paid to the main PTX peculiarities due to which the PTX, operating in the LFM pulse mode has several unique features: high pulse (up to 800 kW) and average (up to 12 kW) power in an extremely wide (10%) frequency band with a high spectrum purity (the relative spectral density of amplitude-phase noise is below -100 dB/Hz at 100 Hz off the carrier, the relative level of regular components in the signal spectrum is below -70 dB). Several aspects, vital for the design of high-power broadband transmitters for radar systems, in particular the advantages of multiple-beam klystrons, are considered.
讨论了一种工作在s波段长波部分的大功率宽带发射机(PTX)。本文主要关注主要PTX特性由于PTX,操作在线性调频脉冲模式下有几个独特的特点:高脉冲(800千瓦)和平均(12千瓦)在一个非常宽的频带(10%)具有高频谱纯度(相对幅度相位噪声谱密度低于-100 dB / Hz承运人在100赫兹,信号频谱中的常规组件的相对水平低于-70分贝)。考虑了雷达系统大功率宽带发射机设计的几个重要方面，特别是多波束速调管的优点。
{"title":"An S-band high-power broadband transmitter","authors":"B.B. Baturov, A.V. Vinogradnyi, G.A. Koshevarov, L. Melnikov, A.N. Korolyev, P.M. Meleshkevich, V.I. Poognin","doi":"10.1109/MWSYM.2000.861121","DOIUrl":"https://doi.org/10.1109/MWSYM.2000.861121","url":null,"abstract":"A high-power broadband transmitter (PTX) operating at the longer-wave part of the S-band is discussed. In the present paper principal attention is paid to the main PTX peculiarities due to which the PTX, operating in the LFM pulse mode has several unique features: high pulse (up to 800 kW) and average (up to 12 kW) power in an extremely wide (10%) frequency band with a high spectrum purity (the relative spectral density of amplitude-phase noise is below -100 dB/Hz at 100 Hz off the carrier, the relative level of regular components in the signal spectrum is below -70 dB). Several aspects, vital for the design of high-power broadband transmitters for radar systems, in particular the advantages of multiple-beam klystrons, are considered.","PeriodicalId":149404,"journal":{"name":"2000 IEEE MTT-S International Microwave Symposium Digest (Cat. No.00CH37017)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2000-06-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124952099","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-06-11DOI: 10.1109/MWSYM.2000.862347
A. Margomenos, S. Valas, M. I. Herman, L. Katehi
The necessity for design of ICs with higher density makes the issue of circuit isolation a very important one. In multilayer structures, surface waves excited by planar discontinuities induce parasitic currents on adjoining interconnects. This parasitic coupling becomes a limiting factor as density increases and size reduces. The dependence of these proximity effects on interconnect geometry is the subject of this study. The previously suggested method of increasing isolation by introducing micromachined cavities in the common substrate is utilized. Various configurations of finite ground microstrip lines (MS) and finite ground coplanar waveguides (FGCPW) have been studied. Theoretical and experimental results, in terms of reduced isolation, are presented showing the advantages of the simultaneous use of FGCPW and MS in high-density circuits.
{"title":"Isolation in three-dimensional integrated circuits","authors":"A. Margomenos, S. Valas, M. I. Herman, L. Katehi","doi":"10.1109/MWSYM.2000.862347","DOIUrl":"https://doi.org/10.1109/MWSYM.2000.862347","url":null,"abstract":"The necessity for design of ICs with higher density makes the issue of circuit isolation a very important one. In multilayer structures, surface waves excited by planar discontinuities induce parasitic currents on adjoining interconnects. This parasitic coupling becomes a limiting factor as density increases and size reduces. The dependence of these proximity effects on interconnect geometry is the subject of this study. The previously suggested method of increasing isolation by introducing micromachined cavities in the common substrate is utilized. Various configurations of finite ground microstrip lines (MS) and finite ground coplanar waveguides (FGCPW) have been studied. Theoretical and experimental results, in terms of reduced isolation, are presented showing the advantages of the simultaneous use of FGCPW and MS in high-density circuits.","PeriodicalId":149404,"journal":{"name":"2000 IEEE MTT-S International Microwave Symposium Digest (Cat. No.00CH37017)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2000-06-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123516341","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-06-11DOI: 10.1109/MWSYM.2000.863536
W. Simon, R. Kulke, A. Wien, M. Rittweger, I. Wolff, A. Girard, J. Bertinet
Multilayer LTCC substrates with screen printed conductors are considered as a key technology for coming RF wireless communication and automotive applications. Small but expensive MMICs should be integrated in a much cheaper LTCC environment to become a multichip module (MCM). Interconnects between the environmental waveguides and the integrated chips have been designed, optimized, fabricated and evaluated by the authors, which are partners in the European R&D project RAMP.
{"title":"Interconnects and transitions in multilayer LTCC multichip modules for 24 GHz ISM-band applications","authors":"W. Simon, R. Kulke, A. Wien, M. Rittweger, I. Wolff, A. Girard, J. Bertinet","doi":"10.1109/MWSYM.2000.863536","DOIUrl":"https://doi.org/10.1109/MWSYM.2000.863536","url":null,"abstract":"Multilayer LTCC substrates with screen printed conductors are considered as a key technology for coming RF wireless communication and automotive applications. Small but expensive MMICs should be integrated in a much cheaper LTCC environment to become a multichip module (MCM). Interconnects between the environmental waveguides and the integrated chips have been designed, optimized, fabricated and evaluated by the authors, which are partners in the European R&D project RAMP.","PeriodicalId":149404,"journal":{"name":"2000 IEEE MTT-S International Microwave Symposium Digest (Cat. No.00CH37017)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2000-06-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123533591","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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