Size effect is a fundamental phenomenon in ferroelectric materials and grain size dependence of the dielectric and piezoelectric properties of BaTiO3 (BTO) ceramics has been observed. However, the dependence of flexoelectric response on grain size has not been reported, thus far. In this work, BTO ceramics with grain sizes ranging from 0.59 to 8.90 μm were prepared by a two-step sintering method. We found that with increasing grain size, the flexoelectric coefficient of BTO ceramics increases from less than 20 μC/m (grain size 0.59–0.69 μm) to more than 300 μC/m (grain size 8.90 μm), but the grain size dependence of the flexoelectric response is different from that of the dielectric and piezoelectric properties. Observation by piezoresponse force microscopy reveals that the surface regions of BTO ceramics are spontaneously polarized. Strong inhomogeneous strain is measured by grazing incidence x-ray diffraction and the resultant flexoelectric effect is enough to polarize the surface regions. Fitting of the flexoelectric data indicates that the grain size effect of the flexoelectric response can be well explained by the polarized surface layer mechanism.
{"title":"Grain size effect of the flexoelectric response in BaTiO3 ceramics","authors":"Xu Yang, Baoju Xia, Xiongxin Guo, Yagang Qi, Zhen Wang, Zhenxiao Fu, Yu Chen, Ruzhong Zuo, Baojin Chu","doi":"10.1063/5.0186230","DOIUrl":"https://doi.org/10.1063/5.0186230","url":null,"abstract":"Size effect is a fundamental phenomenon in ferroelectric materials and grain size dependence of the dielectric and piezoelectric properties of BaTiO3 (BTO) ceramics has been observed. However, the dependence of flexoelectric response on grain size has not been reported, thus far. In this work, BTO ceramics with grain sizes ranging from 0.59 to 8.90 μm were prepared by a two-step sintering method. We found that with increasing grain size, the flexoelectric coefficient of BTO ceramics increases from less than 20 μC/m (grain size 0.59–0.69 μm) to more than 300 μC/m (grain size 8.90 μm), but the grain size dependence of the flexoelectric response is different from that of the dielectric and piezoelectric properties. Observation by piezoresponse force microscopy reveals that the surface regions of BTO ceramics are spontaneously polarized. Strong inhomogeneous strain is measured by grazing incidence x-ray diffraction and the resultant flexoelectric effect is enough to polarize the surface regions. Fitting of the flexoelectric data indicates that the grain size effect of the flexoelectric response can be well explained by the polarized surface layer mechanism.","PeriodicalId":15088,"journal":{"name":"Journal of Applied Physics","volume":"51 1","pages":""},"PeriodicalIF":3.2,"publicationDate":"2024-01-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139423837","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
M. Stabentheiner, P. Diehle, S. Hübner, M. Lejoyeux, F. Altmann, R. Neumann, A. A. Taylor, D. Pogany, C. Ostermaier
The role of threading dislocations in the intrinsic degradation of lateral GaN devices during high reverse bias stress tests (RBSTs) is largely unknown. We now present the results on lateral p-GaN/AlGaN/2DEG heterojunctions with a width of 200 μm in GaN-on-Si. A time-dependent permanent degradation of the heterojunction under high reverse bias and elevated temperatures can be observed, ultimately leading to a hard breakdown and device destruction. By using an integrated series p-GaN resistor, the device is protected from destruction and, consequently, the influence of dislocations on the degradation mechanism could be studied. Localization by emission microscopy could show that the transient current increase during a RBST is the result of the creation of a limited amount of highly localized leakage paths along the whole device width. We could establish a 1:1 correlation of leakage sites with a structural material degradation within the AlGaN barrier for nine individual positions on two different devices by planar transmission electron microscopy analysis. To unambiguously show whether dislocations in GaN-on-Si even should be considered a potential trigger for the RBST degradation in lateral heterojunctions, a combined planar and cross-sectional lamella approach was used for the first time for larger devices. This enabled the visualization of the three-dimensional propagation path of the dislocations close to the degradation sites. It was found that there is no statistically significant link between the material degradation and pre-existing dislocations. Our findings offer new insights into the GaN-on-Si material system, upon which upcoming power technologies are built upon.
{"title":"On the insignificance of dislocations in reverse bias degradation of lateral GaN-on-Si devices","authors":"M. Stabentheiner, P. Diehle, S. Hübner, M. Lejoyeux, F. Altmann, R. Neumann, A. A. Taylor, D. Pogany, C. Ostermaier","doi":"10.1063/5.0178743","DOIUrl":"https://doi.org/10.1063/5.0178743","url":null,"abstract":"The role of threading dislocations in the intrinsic degradation of lateral GaN devices during high reverse bias stress tests (RBSTs) is largely unknown. We now present the results on lateral p-GaN/AlGaN/2DEG heterojunctions with a width of 200 μm in GaN-on-Si. A time-dependent permanent degradation of the heterojunction under high reverse bias and elevated temperatures can be observed, ultimately leading to a hard breakdown and device destruction. By using an integrated series p-GaN resistor, the device is protected from destruction and, consequently, the influence of dislocations on the degradation mechanism could be studied. Localization by emission microscopy could show that the transient current increase during a RBST is the result of the creation of a limited amount of highly localized leakage paths along the whole device width. We could establish a 1:1 correlation of leakage sites with a structural material degradation within the AlGaN barrier for nine individual positions on two different devices by planar transmission electron microscopy analysis. To unambiguously show whether dislocations in GaN-on-Si even should be considered a potential trigger for the RBST degradation in lateral heterojunctions, a combined planar and cross-sectional lamella approach was used for the first time for larger devices. This enabled the visualization of the three-dimensional propagation path of the dislocations close to the degradation sites. It was found that there is no statistically significant link between the material degradation and pre-existing dislocations. Our findings offer new insights into the GaN-on-Si material system, upon which upcoming power technologies are built upon.","PeriodicalId":15088,"journal":{"name":"Journal of Applied Physics","volume":"64 1","pages":""},"PeriodicalIF":3.2,"publicationDate":"2024-01-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139421795","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The design of metallic glasses (MGs) with good properties is one of the long-standing bottlenecks in materials science and engineering, which has been relying mostly on far less efficient traditional trial-and-error methods. Even the currently popular machine learning-based forward designs, which use manual input to navigate high dimensional compositional space, often become inefficient with the increasing compositional complexity in MGs. Here, we developed an inverse design machine learning model, leveraging the variational autoencoder (VAE), to directly generate the MGs with good glass-forming ability (GFA). We demonstrate that our VAE with the property prediction model is not only an expressive generative model but also able to do accurate property prediction. Our model allows us to automatically generate novel MG compositions by performing simple operations in the latent space. After randomly generating 3000MG compositions using the model, a detailed analysis of four typical metallic alloys shows that unreported MG compositions with better glass-forming ability can be predicted. Moreover, our model facilitates the use of powerful optimization algorithms to efficiently guide the search for MGs with good GFA in the latent space. We believe that this is an efficient way to discover MGs with excellent properties.
{"title":"Inverse design machine learning model for metallic glasses with good glass-forming ability and properties","authors":"K. Y. Li, M. Z. Li, W. H. Wang","doi":"10.1063/5.0179854","DOIUrl":"https://doi.org/10.1063/5.0179854","url":null,"abstract":"The design of metallic glasses (MGs) with good properties is one of the long-standing bottlenecks in materials science and engineering, which has been relying mostly on far less efficient traditional trial-and-error methods. Even the currently popular machine learning-based forward designs, which use manual input to navigate high dimensional compositional space, often become inefficient with the increasing compositional complexity in MGs. Here, we developed an inverse design machine learning model, leveraging the variational autoencoder (VAE), to directly generate the MGs with good glass-forming ability (GFA). We demonstrate that our VAE with the property prediction model is not only an expressive generative model but also able to do accurate property prediction. Our model allows us to automatically generate novel MG compositions by performing simple operations in the latent space. After randomly generating 3000MG compositions using the model, a detailed analysis of four typical metallic alloys shows that unreported MG compositions with better glass-forming ability can be predicted. Moreover, our model facilitates the use of powerful optimization algorithms to efficiently guide the search for MGs with good GFA in the latent space. We believe that this is an efficient way to discover MGs with excellent properties.","PeriodicalId":15088,"journal":{"name":"Journal of Applied Physics","volume":"17 1","pages":""},"PeriodicalIF":3.2,"publicationDate":"2024-01-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139423752","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Diffraction-free beams with large depth-of-field have a lot of potential in the field of acoustics, such as imaging, sensing, and particle manipulation. In this study, an acoustic Bessel-like beam is produced using an axicon-sonic crystal lens. The sonic crystal is created using cylindrical glass rods arranged in a triangular shape with a centered square lattice configuration. The numerical simulation between 4 and 8 kHz indicates that the axicon-sonic crystal converts the plane acoustic wave into a Bessel-like beam. The analysis of the beam indicates that the depth of field of this beam depends on the size and periodicity (lattice parameter) of the sonic crystal. The axicon lens also displays variable focal lengths at different frequencies. A graded index layer was implemented to mitigate the reflection caused by the significant impedance mismatch. Experimental validation of acoustic Bessel-like beam formation is also reported for the working frequencies. At 8 kHz, the measured range to the 50% on-axis intensity was 34λ, while the focus width at the same frequency was measured to be 2λ. The integration of three distinct design strategies—axicon shape, sonic crystal, and graded index—expands the possibilities for sound focusing applications.
{"title":"Acoustic Bessel-like beam generation using phononic crystals","authors":"Santosh Dasila, Chitti Venkata Krishnamurthy, Venkatachalam Subramanian","doi":"10.1063/5.0182429","DOIUrl":"https://doi.org/10.1063/5.0182429","url":null,"abstract":"Diffraction-free beams with large depth-of-field have a lot of potential in the field of acoustics, such as imaging, sensing, and particle manipulation. In this study, an acoustic Bessel-like beam is produced using an axicon-sonic crystal lens. The sonic crystal is created using cylindrical glass rods arranged in a triangular shape with a centered square lattice configuration. The numerical simulation between 4 and 8 kHz indicates that the axicon-sonic crystal converts the plane acoustic wave into a Bessel-like beam. The analysis of the beam indicates that the depth of field of this beam depends on the size and periodicity (lattice parameter) of the sonic crystal. The axicon lens also displays variable focal lengths at different frequencies. A graded index layer was implemented to mitigate the reflection caused by the significant impedance mismatch. Experimental validation of acoustic Bessel-like beam formation is also reported for the working frequencies. At 8 kHz, the measured range to the 50% on-axis intensity was 34λ, while the focus width at the same frequency was measured to be 2λ. The integration of three distinct design strategies—axicon shape, sonic crystal, and graded index—expands the possibilities for sound focusing applications.","PeriodicalId":15088,"journal":{"name":"Journal of Applied Physics","volume":"3 1","pages":""},"PeriodicalIF":3.2,"publicationDate":"2024-01-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139423547","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The linear double-diffusivity (D-D) model of Aifantis, comprising two coupled Fick-type partial differential equations and a mass exchange term connecting the diffusivities, is a paradigm in modeling mass transport in inhomogeneous media, e.g., fissures or fractures. Uncoupling of these equations led to a higher order partial differential equation that reproduced the non-classical transport terms, analyzed independently through Barenblatt’s pseudoparabolic equation and the Cahn–Hilliard spinodal decomposition equation. In the present article, we study transport in a nonlinearly coupled D-D model and determine the regime-switching of the associated diffusive processes using a revised formulation of the celebrated Lux method that combines forward Fourier transform with a Laplace transform followed by an Inverse Fourier transform of the governing reaction–diffusion (R–D) equations. This new formulation has key application possibilities in a wide range of non-equilibrium biological and financial systems by approximating closed-form analytical solutions of nonlinear models.
{"title":"Applications of regime-switching in the nonlinear double-diffusivity (D-D) model","authors":"Amit K. Chattopadhyay, Elias C. Aifantis","doi":"10.1063/5.0188904","DOIUrl":"https://doi.org/10.1063/5.0188904","url":null,"abstract":"The linear double-diffusivity (D-D) model of Aifantis, comprising two coupled Fick-type partial differential equations and a mass exchange term connecting the diffusivities, is a paradigm in modeling mass transport in inhomogeneous media, e.g., fissures or fractures. Uncoupling of these equations led to a higher order partial differential equation that reproduced the non-classical transport terms, analyzed independently through Barenblatt’s pseudoparabolic equation and the Cahn–Hilliard spinodal decomposition equation. In the present article, we study transport in a nonlinearly coupled D-D model and determine the regime-switching of the associated diffusive processes using a revised formulation of the celebrated Lux method that combines forward Fourier transform with a Laplace transform followed by an Inverse Fourier transform of the governing reaction–diffusion (R–D) equations. This new formulation has key application possibilities in a wide range of non-equilibrium biological and financial systems by approximating closed-form analytical solutions of nonlinear models.","PeriodicalId":15088,"journal":{"name":"Journal of Applied Physics","volume":"110 1","pages":""},"PeriodicalIF":3.2,"publicationDate":"2024-01-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139424052","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Darrell Cheu, Thomas Adams, Shripad Revankar, Vilas Pol
Lithium foils were demonstrated to absorb surrogate protium for tritium-powered betavoltaics. 20 μm thick lithium foils were hole-punched from a ribbon of electrodeposited lithium on copper foil. The lithium foils were loaded with hydrogen in a custom Sievert apparatus where the pressure drop showed full hydriding at a hydrogen pressure of 2 bar and at all loading temperatures above the lithium melting point at 190, 200, 225, 250, and 300. Lithium hydride formation was confirmed with Raman spectroscopy after hydrogen loading. The kinetics of experimental hydride formation was compared to the diffusion-limited Mintz–Bloch model. While the Mintz–Bloch model showed good fit with the experimental loadings, the model overpredicted the loading kinetics starting at 250 °C and at higher temperatures. The overprediction was either caused by lithium hydride outgassing due to some reduction with some residual lithium hydroxide created from brief air exposure when sealing the lithium in the reactor or a transition from diffusion-limited hydride growth to surface or metal–hydride interface-limited hydride growth.
{"title":"Evaluation of lithium as a tritium storage medium for betavoltaics","authors":"Darrell Cheu, Thomas Adams, Shripad Revankar, Vilas Pol","doi":"10.1063/5.0169156","DOIUrl":"https://doi.org/10.1063/5.0169156","url":null,"abstract":"Lithium foils were demonstrated to absorb surrogate protium for tritium-powered betavoltaics. 20 μm thick lithium foils were hole-punched from a ribbon of electrodeposited lithium on copper foil. The lithium foils were loaded with hydrogen in a custom Sievert apparatus where the pressure drop showed full hydriding at a hydrogen pressure of 2 bar and at all loading temperatures above the lithium melting point at 190, 200, 225, 250, and 300. Lithium hydride formation was confirmed with Raman spectroscopy after hydrogen loading. The kinetics of experimental hydride formation was compared to the diffusion-limited Mintz–Bloch model. While the Mintz–Bloch model showed good fit with the experimental loadings, the model overpredicted the loading kinetics starting at 250 °C and at higher temperatures. The overprediction was either caused by lithium hydride outgassing due to some reduction with some residual lithium hydroxide created from brief air exposure when sealing the lithium in the reactor or a transition from diffusion-limited hydride growth to surface or metal–hydride interface-limited hydride growth.","PeriodicalId":15088,"journal":{"name":"Journal of Applied Physics","volume":"54 1","pages":""},"PeriodicalIF":3.2,"publicationDate":"2024-01-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139421796","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Fanghua Tian, Kaiyan Cao, Kaiyun Chen, Sen Kong, Zhiyong Dai, Qizhong Zhao, Minxia Fang, Xiaoqin Ke, Chao Zhou, Yin Zhang, Sen Yang
In this work, the magnetocaloric effect in Ni50Mn36In5Sb9 alloy was increased by more than 50% through directional solidification, and the magnetic entropy change increased to 36.2 J kg−1 K−1 under the field of 5 T. The calculated results of differential scanning calorimetry curves confirmed the enhanced entropy change, which also increased from 29.7 to 40.7 J kg−1 K−1. Moreover, first-principles calculations show that the surface formation energy along the L21 (220) plane is the lowest at room temperature, and it is easy to form and undergo martensitic transformation from the (220) crystal plane. Directional solidification causes the alloy to grow basically toward the (220) crystal plane, improve atomic ordering, reduce grain boundaries, and increase grain size. Thereby, the magnetic entropy change is enhanced.
{"title":"Large magnetic entropy change in Ni–Mn–In–Sb alloys via directional solidification and calculated by first-principles calculations","authors":"Fanghua Tian, Kaiyan Cao, Kaiyun Chen, Sen Kong, Zhiyong Dai, Qizhong Zhao, Minxia Fang, Xiaoqin Ke, Chao Zhou, Yin Zhang, Sen Yang","doi":"10.1063/5.0189339","DOIUrl":"https://doi.org/10.1063/5.0189339","url":null,"abstract":"In this work, the magnetocaloric effect in Ni50Mn36In5Sb9 alloy was increased by more than 50% through directional solidification, and the magnetic entropy change increased to 36.2 J kg−1 K−1 under the field of 5 T. The calculated results of differential scanning calorimetry curves confirmed the enhanced entropy change, which also increased from 29.7 to 40.7 J kg−1 K−1. Moreover, first-principles calculations show that the surface formation energy along the L21 (220) plane is the lowest at room temperature, and it is easy to form and undergo martensitic transformation from the (220) crystal plane. Directional solidification causes the alloy to grow basically toward the (220) crystal plane, improve atomic ordering, reduce grain boundaries, and increase grain size. Thereby, the magnetic entropy change is enhanced.","PeriodicalId":15088,"journal":{"name":"Journal of Applied Physics","volume":"26 1","pages":""},"PeriodicalIF":3.2,"publicationDate":"2024-01-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139408715","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
H. M. Lefcochilos-Fogelquist, L. F. Wan, A. J. E. Rowberg, S. Kang, V. Stavila, L. E. Klebanoff, M. D. Allendorf, B. C. Wood
Hydrogen is a promising energy carrier, but its onboard application is limited by the need for compact, low-pressure storage solutions. Solid-state complex metal hydride systems, such as MgB2/Mg(BH4)2, offer high storage capacities but suffer from sluggish kinetics and poor reversibility. One avenue for improving reactivity is to introduce metal dopants to alter electronic and atomic properties, but the role of these chemical additives remains poorly understood, particularly for the hydrogenation reaction. In this work, we used density functional theory calculations on model MgB2 systems to rationalize the potential role of metal dopants in destabilizing B–B bonding within the MgB2 lattice. We carried out detailed electronic structure analyses for 28 different metal dopant adatoms to identify properties that contribute to a dopant’s efficacy. Based on the simulation results, we propose that an intermediate ionic and covalent character of the bonds between adatoms and B atoms is desirable for facilitating charge redistribution, disrupting the B–B bond network, and promoting H2 dissociation and H atom chemisorption on MgB2.
氢是一种前景广阔的能源载体，但由于需要紧凑、低压的存储解决方案，氢在车载设备上的应用受到了限制。固态复合金属氢化物系统（如 MgB2/Mg(BH4)2）具有很高的存储容量，但存在动力学缓慢和可逆性差的问题。改善反应性的一个途径是引入金属掺杂剂来改变电子和原子特性，但人们对这些化学添加剂的作用仍然知之甚少，尤其是在氢化反应中。在这项研究中，我们利用密度泛函理论对模型 MgB2 系统进行了计算，以合理解释金属掺杂物在 MgB2 晶格内破坏 B-B 键稳定性的潜在作用。我们对 28 种不同的金属掺杂原子进行了详细的电子结构分析，以确定有助于提高掺杂剂功效的特性。根据模拟结果，我们提出，掺杂原子与 B 原子间的键最好具有离子和共价的中间特性，以促进电荷再分配、破坏 B-B 键网络、促进 MgB2 上的 H2 解离和 H 原子化学吸附。
{"title":"Understanding electronic structure tunability by metal dopants for promoting MgB2 hydrogenation","authors":"H. M. Lefcochilos-Fogelquist, L. F. Wan, A. J. E. Rowberg, S. Kang, V. Stavila, L. E. Klebanoff, M. D. Allendorf, B. C. Wood","doi":"10.1063/5.0175546","DOIUrl":"https://doi.org/10.1063/5.0175546","url":null,"abstract":"Hydrogen is a promising energy carrier, but its onboard application is limited by the need for compact, low-pressure storage solutions. Solid-state complex metal hydride systems, such as MgB2/Mg(BH4)2, offer high storage capacities but suffer from sluggish kinetics and poor reversibility. One avenue for improving reactivity is to introduce metal dopants to alter electronic and atomic properties, but the role of these chemical additives remains poorly understood, particularly for the hydrogenation reaction. In this work, we used density functional theory calculations on model MgB2 systems to rationalize the potential role of metal dopants in destabilizing B–B bonding within the MgB2 lattice. We carried out detailed electronic structure analyses for 28 different metal dopant adatoms to identify properties that contribute to a dopant’s efficacy. Based on the simulation results, we propose that an intermediate ionic and covalent character of the bonds between adatoms and B atoms is desirable for facilitating charge redistribution, disrupting the B–B bond network, and promoting H2 dissociation and H atom chemisorption on MgB2.","PeriodicalId":15088,"journal":{"name":"Journal of Applied Physics","volume":"69 1","pages":""},"PeriodicalIF":3.2,"publicationDate":"2024-01-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139408710","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A numerical model for a spin wave delay-line active ring resonator is presented. Spin wave dynamics along a one-dimensional strip of magnetic material are modeled using the nonlinear Schrödinger equation. The equation is solved numerically in Fourier space using the fourth-order Runge–Kutta method and yields qualitative agreement with experimental measurements of spin wave dynamics in two different regimes. The model provides a useful tool for performing experiments based on neuromorphic computing and logic gates in traveling spin wave devices.
{"title":"Numerical simulations of a magnonic reservoir computer","authors":"Stuart Watt, Mikhail Kostylev","doi":"10.1063/5.0184848","DOIUrl":"https://doi.org/10.1063/5.0184848","url":null,"abstract":"A numerical model for a spin wave delay-line active ring resonator is presented. Spin wave dynamics along a one-dimensional strip of magnetic material are modeled using the nonlinear Schrödinger equation. The equation is solved numerically in Fourier space using the fourth-order Runge–Kutta method and yields qualitative agreement with experimental measurements of spin wave dynamics in two different regimes. The model provides a useful tool for performing experiments based on neuromorphic computing and logic gates in traveling spin wave devices.","PeriodicalId":15088,"journal":{"name":"Journal of Applied Physics","volume":"2 1","pages":""},"PeriodicalIF":3.2,"publicationDate":"2024-01-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139409103","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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