It is a formidable challenge to find the minority carrier recombination lifetime in low-dimensional devices as low-dimensionality increases the surface recombination rate and often reduces the recombination lifetime to a scale of picoseconds. In this work, we demonstrated a simple but powerful method to quantitatively probe the minority carrier recombination lifetime in silicon nanowires or microwires by fitting the experimental photoresponses with our recently established analytical photoresponse principle of photoconductors. The nanowires were passivated with small molecules and Al2O3 to suppress surface recombination, which will increase the minority recombination lifetimes. As expected, the minority carrier recombination lifetime found by this approach increases by orders of magnitude. These wires were also made into PIN diodes, the leakage of which was reduced at least 1 order of magnitude after surface passivation by Al2O3. The minority recombination lifetime found from the leakage current of these devices is largely consistent with what we found from our analytical photoresponse principle. As a further step, we performed scanning photocurrent microscopy to find the minority diffusion length from which we found that the minority recombination lifetime is close to what we found from the analytical photoresponses. In short, this work validated that our analytical response principle is a reliable method to find the minority recombination lifetime in low-dimensional semiconductors.
{"title":"Validation of minority carrier recombination lifetimes in low-dimensional semiconductors found by analytical photoresponses","authors":"Kai Li, Yinchu Shen, Zhijuan Su, Yaping Dan","doi":"10.1063/5.0181306","DOIUrl":"https://doi.org/10.1063/5.0181306","url":null,"abstract":"It is a formidable challenge to find the minority carrier recombination lifetime in low-dimensional devices as low-dimensionality increases the surface recombination rate and often reduces the recombination lifetime to a scale of picoseconds. In this work, we demonstrated a simple but powerful method to quantitatively probe the minority carrier recombination lifetime in silicon nanowires or microwires by fitting the experimental photoresponses with our recently established analytical photoresponse principle of photoconductors. The nanowires were passivated with small molecules and Al2O3 to suppress surface recombination, which will increase the minority recombination lifetimes. As expected, the minority carrier recombination lifetime found by this approach increases by orders of magnitude. These wires were also made into PIN diodes, the leakage of which was reduced at least 1 order of magnitude after surface passivation by Al2O3. The minority recombination lifetime found from the leakage current of these devices is largely consistent with what we found from our analytical photoresponse principle. As a further step, we performed scanning photocurrent microscopy to find the minority diffusion length from which we found that the minority recombination lifetime is close to what we found from the analytical photoresponses. In short, this work validated that our analytical response principle is a reliable method to find the minority recombination lifetime in low-dimensional semiconductors.","PeriodicalId":15088,"journal":{"name":"Journal of Applied Physics","volume":"50 1","pages":""},"PeriodicalIF":3.2,"publicationDate":"2024-01-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139375885","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The discovery of strontium niobate (SNO) as a potentially new transparent electrode has generated much interest due to its implications in various optoelectronic devices. Pristine SNO exhibits exceptionally low resistivity (∼10−4 Ω cm) at room temperature. However, this low resistivity occurs due to large number of carrier concentration in the system, which significantly affects its optical transparency (∼40%) in the visible range and hinders its practical applications as a transparent electrode. Here, we show that modulating the growth kinetics via oxygen manipulation is a feasible approach to achieve the desired optoelectronic properties. In particular, epitaxial (001) SNO thin films are grown on (001) lanthanum aluminate by pulsed laser deposition at different oxygen partial pressures and are shown to improve the optical transparency from 40% to 72% (λ = 550 nm) at a marginal cost of electrical resistivity from 2.8 to 8.1 × 10−4 Ω cm. These changes are directly linked with the multi-valence Nb-states, as evidenced by x-ray photoelectron spectroscopy. Furthermore, the defect-engineered SNO films exhibit multiple electronic phases that include pure metallic, coexisting metal-semiconducting-like, and pure semiconducting-like phases as evidenced by low-temperature electrical transport measurements. The intriguing metal-semiconducting coexisting phase is thoroughly analyzed using both perpendicular and angle-dependent magnetoresistance measurements, further supported by a density functional theory-based first-principles study and the observed feature is explained by the quantum correction to the conductivity. Overall, this study shows an exciting avenue for altering the optical and transport properties of SNO epitaxial thin films for their practical use as a next-generation transparent electrode.
{"title":"Modulation of the optical and transport properties of epitaxial SrNbO3 thin films by defect engineering","authors":"Shammi Kumar, Jibril Ahammad, Dip Das, Rakesh Kumar, Sankar Dhar, Priya Johari","doi":"10.1063/5.0179267","DOIUrl":"https://doi.org/10.1063/5.0179267","url":null,"abstract":"The discovery of strontium niobate (SNO) as a potentially new transparent electrode has generated much interest due to its implications in various optoelectronic devices. Pristine SNO exhibits exceptionally low resistivity (∼10−4 Ω cm) at room temperature. However, this low resistivity occurs due to large number of carrier concentration in the system, which significantly affects its optical transparency (∼40%) in the visible range and hinders its practical applications as a transparent electrode. Here, we show that modulating the growth kinetics via oxygen manipulation is a feasible approach to achieve the desired optoelectronic properties. In particular, epitaxial (001) SNO thin films are grown on (001) lanthanum aluminate by pulsed laser deposition at different oxygen partial pressures and are shown to improve the optical transparency from 40% to 72% (λ = 550 nm) at a marginal cost of electrical resistivity from 2.8 to 8.1 × 10−4 Ω cm. These changes are directly linked with the multi-valence Nb-states, as evidenced by x-ray photoelectron spectroscopy. Furthermore, the defect-engineered SNO films exhibit multiple electronic phases that include pure metallic, coexisting metal-semiconducting-like, and pure semiconducting-like phases as evidenced by low-temperature electrical transport measurements. The intriguing metal-semiconducting coexisting phase is thoroughly analyzed using both perpendicular and angle-dependent magnetoresistance measurements, further supported by a density functional theory-based first-principles study and the observed feature is explained by the quantum correction to the conductivity. Overall, this study shows an exciting avenue for altering the optical and transport properties of SNO epitaxial thin films for their practical use as a next-generation transparent electrode.","PeriodicalId":15088,"journal":{"name":"Journal of Applied Physics","volume":"56 1","pages":""},"PeriodicalIF":3.2,"publicationDate":"2024-01-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139375837","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
An analysis of plasma density distributions at arbitrary ion–atom collisionality for one-dimensional axially symmetrical cylindrical and annular plasmas is presented. Perturbations of plasma densities caused by a cylindrical probe are studied for arbitrary ion–atom collisionality. Analytical expressions for the plasma characteristics near the probe for low collisionality have been obtained. The plasma was modeled by the hydrodynamic neutral plasma equations, taking into account ionization, ion inertia, and a non-linear ion frictional force, which dominates the plasma transport at low gas pressures. Significant plasma density depletion around the probe has been observed for a wide range of ion–atom collisionality. The presented results predict underestimation of plasma density obtained from the classical Langmuir probe procedure and should provide a better understanding of electrostatic, magnetic, and microwave probes inserted into plasmas at low gas pressure.
{"title":"Plasma density distribution and its perturbation by probes in axially symmetrical plasma","authors":"Valery Godyak, Natalia Sternberg","doi":"10.1063/5.0180185","DOIUrl":"https://doi.org/10.1063/5.0180185","url":null,"abstract":"An analysis of plasma density distributions at arbitrary ion–atom collisionality for one-dimensional axially symmetrical cylindrical and annular plasmas is presented. Perturbations of plasma densities caused by a cylindrical probe are studied for arbitrary ion–atom collisionality. Analytical expressions for the plasma characteristics near the probe for low collisionality have been obtained. The plasma was modeled by the hydrodynamic neutral plasma equations, taking into account ionization, ion inertia, and a non-linear ion frictional force, which dominates the plasma transport at low gas pressures. Significant plasma density depletion around the probe has been observed for a wide range of ion–atom collisionality. The presented results predict underestimation of plasma density obtained from the classical Langmuir probe procedure and should provide a better understanding of electrostatic, magnetic, and microwave probes inserted into plasmas at low gas pressure.","PeriodicalId":15088,"journal":{"name":"Journal of Applied Physics","volume":"212 1","pages":""},"PeriodicalIF":3.2,"publicationDate":"2024-01-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139375907","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Chengxi Zhong, Qingyi Lu, Teng Li, Hu Su, Song Liu
Acoustic holography (AH) provides a promising technique for arbitrary acoustic field reconstruction, supporting many applications like robotic micro-nano manipulation, neuromodulation, volumetric imaging, and virtual reality. In AH, three-dimensional (3D) acoustic fields quantified with complex-valued acoustic pressures are reconstructed by virtue of two-dimensional (2D) acoustic holograms. Phase-only hologram (POH) is recently regarded as an energy-efficient way for AH, which is typically implemented by a dynamically programmable phased array of transducers (PATs). As a result, spatiotemporal precise acoustic field reconstruction is enabled by precise, dynamic, and individual actuation of PAT. Thus, 2D POH is required per arbitrary acoustic fields, which can be viewed as a physical inverse problem. However, solving the aforementioned physical inverse problem in numerical manners poses challenges due to its non-linear, high-dimensional, and complex coupling natures. The existing iterative algorithms like the iterative angular spectrum approach (IASA) and iterative backpropagation (IB) still suffer from speed-accuracy trade-offs. Hence, this paper explores a novel physics-iterative-reinforced deep learning method, in which frequency-argument contrastive learning is proposed facilitated by the inherent physical nature of AH, and the energy conservation law is under consideration. The experimental results demonstrate the effectiveness of the proposed method for acoustic field reconstruction, highlighting its significant potential in the domain of acoustics, and pushing forward the combination of physics into deep learning.
{"title":"Real-time acoustic holography with physics-reinforced contrastive learning for acoustic field reconstruction","authors":"Chengxi Zhong, Qingyi Lu, Teng Li, Hu Su, Song Liu","doi":"10.1063/5.0174978","DOIUrl":"https://doi.org/10.1063/5.0174978","url":null,"abstract":"Acoustic holography (AH) provides a promising technique for arbitrary acoustic field reconstruction, supporting many applications like robotic micro-nano manipulation, neuromodulation, volumetric imaging, and virtual reality. In AH, three-dimensional (3D) acoustic fields quantified with complex-valued acoustic pressures are reconstructed by virtue of two-dimensional (2D) acoustic holograms. Phase-only hologram (POH) is recently regarded as an energy-efficient way for AH, which is typically implemented by a dynamically programmable phased array of transducers (PATs). As a result, spatiotemporal precise acoustic field reconstruction is enabled by precise, dynamic, and individual actuation of PAT. Thus, 2D POH is required per arbitrary acoustic fields, which can be viewed as a physical inverse problem. However, solving the aforementioned physical inverse problem in numerical manners poses challenges due to its non-linear, high-dimensional, and complex coupling natures. The existing iterative algorithms like the iterative angular spectrum approach (IASA) and iterative backpropagation (IB) still suffer from speed-accuracy trade-offs. Hence, this paper explores a novel physics-iterative-reinforced deep learning method, in which frequency-argument contrastive learning is proposed facilitated by the inherent physical nature of AH, and the energy conservation law is under consideration. The experimental results demonstrate the effectiveness of the proposed method for acoustic field reconstruction, highlighting its significant potential in the domain of acoustics, and pushing forward the combination of physics into deep learning.","PeriodicalId":15088,"journal":{"name":"Journal of Applied Physics","volume":"53 1","pages":""},"PeriodicalIF":3.2,"publicationDate":"2024-01-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139376089","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Precise and reproducible current generation is the key to realizing quantum current standards in metrology. A promising candidate is a tunable-barrier single-charge pump, which can accurately transfer single charges one by one with an error rate below the ppm level. Although several measurements have shown such levels of accuracy, it is necessary to further pursue the possibility of high-precision operation toward reproducible generation of the pumping current in many devices. Here, we investigated silicon single-hole pumps, which may have the potential to outperform single-electron pumps because of the heavy effective mass of holes. Measurements on the temperature dependence of the current generated by the single-hole pump revealed that the tunnel barrier had high energy selectivity, which is a critical parameter for high-accuracy operation. In addition, we applied the dynamic gate-compensation technique to the single-hole pump and confirmed that it yielded a further performance improvement. Finally, we demonstrated gigahertz operation of a single-hole pump in which the estimated lower bound of the pump error rate was around 0.01 ppm. These results imply that single-hole pumps in silicon are capable of high-accuracy, high-speed, and stable single-charge pumping in metrological and quantum-device applications.
{"title":"Advances toward high-accuracy operation of tunable-barrier single-hole pumps in silicon","authors":"Gento Yamahata, Akira Fujiwara","doi":"10.1063/5.0179374","DOIUrl":"https://doi.org/10.1063/5.0179374","url":null,"abstract":"Precise and reproducible current generation is the key to realizing quantum current standards in metrology. A promising candidate is a tunable-barrier single-charge pump, which can accurately transfer single charges one by one with an error rate below the ppm level. Although several measurements have shown such levels of accuracy, it is necessary to further pursue the possibility of high-precision operation toward reproducible generation of the pumping current in many devices. Here, we investigated silicon single-hole pumps, which may have the potential to outperform single-electron pumps because of the heavy effective mass of holes. Measurements on the temperature dependence of the current generated by the single-hole pump revealed that the tunnel barrier had high energy selectivity, which is a critical parameter for high-accuracy operation. In addition, we applied the dynamic gate-compensation technique to the single-hole pump and confirmed that it yielded a further performance improvement. Finally, we demonstrated gigahertz operation of a single-hole pump in which the estimated lower bound of the pump error rate was around 0.01 ppm. These results imply that single-hole pumps in silicon are capable of high-accuracy, high-speed, and stable single-charge pumping in metrological and quantum-device applications.","PeriodicalId":15088,"journal":{"name":"Journal of Applied Physics","volume":"179 1","pages":""},"PeriodicalIF":3.2,"publicationDate":"2024-01-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139376121","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Shamiul Alam, Md Shafayat Hossain, Kai Ni, Vijaykrishnan Narayanan, Ahmedullah Aziz
The recent progress in quantum computing and space exploration led to a surge in interest in cryogenic electronics. Superconducting devices such as Josephson junction, Josephson field effect transistor, cryotron, and superconducting quantum interference device (SQUID) are traditionally used to build cryogenic logic gates. However, due to the superconducting nature, gate-voltage-based control of these devices is extremely difficult. Even more challenging is to cascade the logic gates because most of these devices require current bias for their operation. Therefore, these devices are not as convenient as the semiconducting transistors to design logic gates. Here, to overcome these challenges, we propose a ferroelectric SQUID (FeSQUID) based voltage-controlled logic gates. FeSQUID exhibits two different critical current levels for two different voltage-switchable polarization states of the ferroelectric. We utilize the polarization-dependent (hence, voltage-controllable) superconducting to resistive switching of FeSQUID to design Boolean logic gates such as Copy, NOT, AND, and OR gates. The operations of these gates are verified using a Verilog-A-based compact model of FeSQUID. Finally, to demonstrate the fanning out capability of FeSQUID-based logic family, we simulate a two-input XOR gate using FeSQUID-based NOT, AND, and OR gates. Together with the ongoing progress on FeSQUID-based non-volatile memory, our designed FeSQUID-based logic family will enable all FeSQUID-based cryogenic computer, ensuring minimum mismatch between logic and memory blocks in terms of speed, power consumption, and fabrication process.
{"title":"Voltage-controlled cryogenic Boolean logic gates based on ferroelectric SQUID and heater cryotron","authors":"Shamiul Alam, Md Shafayat Hossain, Kai Ni, Vijaykrishnan Narayanan, Ahmedullah Aziz","doi":"10.1063/5.0172531","DOIUrl":"https://doi.org/10.1063/5.0172531","url":null,"abstract":"The recent progress in quantum computing and space exploration led to a surge in interest in cryogenic electronics. Superconducting devices such as Josephson junction, Josephson field effect transistor, cryotron, and superconducting quantum interference device (SQUID) are traditionally used to build cryogenic logic gates. However, due to the superconducting nature, gate-voltage-based control of these devices is extremely difficult. Even more challenging is to cascade the logic gates because most of these devices require current bias for their operation. Therefore, these devices are not as convenient as the semiconducting transistors to design logic gates. Here, to overcome these challenges, we propose a ferroelectric SQUID (FeSQUID) based voltage-controlled logic gates. FeSQUID exhibits two different critical current levels for two different voltage-switchable polarization states of the ferroelectric. We utilize the polarization-dependent (hence, voltage-controllable) superconducting to resistive switching of FeSQUID to design Boolean logic gates such as Copy, NOT, AND, and OR gates. The operations of these gates are verified using a Verilog-A-based compact model of FeSQUID. Finally, to demonstrate the fanning out capability of FeSQUID-based logic family, we simulate a two-input XOR gate using FeSQUID-based NOT, AND, and OR gates. Together with the ongoing progress on FeSQUID-based non-volatile memory, our designed FeSQUID-based logic family will enable all FeSQUID-based cryogenic computer, ensuring minimum mismatch between logic and memory blocks in terms of speed, power consumption, and fabrication process.","PeriodicalId":15088,"journal":{"name":"Journal of Applied Physics","volume":"63 1","pages":""},"PeriodicalIF":3.2,"publicationDate":"2024-01-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139376030","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Katie R. Gann, Naomi Pieczulewski, Cameron A. Gorsak, Karen Heinselman, Thaddeus J. Asel, Brenton A. Noesges, Kathleen T. Smith, Daniel M. Dryden, Huili Grace Xing, Hari P. Nair, David A. Muller, Michael O. Thompson
Optimizing thermal anneals of Si-implanted β-Ga2O3 is critical for low resistance contacts and selective area doping. We report the impact of annealing ambient, temperature, and time on the activation of room temperature ion-implanted Si in β-Ga2O3 at concentrations from 5 × 1018 to 1 × 1020 cm−3, demonstrating full activation (>80% activation, mobilities >70 cm2/V s) with contact resistances below 0.29 Ω mm. Homoepitaxial β-Ga2O3 films, grown by plasma-assisted molecular beam epitaxy on Fe-doped (010) substrates, were implanted at multiple energies to yield 100 nm box profiles of 5 × 1018, 5 × 1019, and 1 × 1020 cm−3. Anneals were performed in an ultra-high vacuum-compatible quartz furnace at 1 bar with well-controlled gas compositions. To maintain β-Ga2O3 stability, pO2 must be greater than 10−9 bar. Anneals up to pO2 = 1 bar achieve full activation at 5 × 1018 cm−3, while 5 × 1019 cm−3 must be annealed with pO2 ≤ 10−4 bar, and 1 × 1020 cm−3 requires pO2 < 10−6 bar. Water vapor prevents activation and must be maintained below 10−8 bar. Activation is achieved for anneal temperatures as low as 850 °C with mobility increasing with anneal temperatures up to 1050 °C, though Si diffusion has been reported above 950 °C. At 950 °C, activation is maximized between 5 and 20 min with longer times resulting in decreased carrier activation (over-annealing). This over-annealing is significant for concentrations above 5 × 1019 cm−3 and occurs rapidly at 1 × 1020 cm−3. Rutherford backscattering spectrometry (channeling) suggests that damage recovery is seeded from remnant aligned β-Ga2O3 that remains after implantation; this conclusion is also supported by scanning transmission electron microscopy showing retention of the β-phase with inclusions that resemble the γ-phase.
{"title":"Silicon implantation and annealing in β-Ga2O3: Role of ambient, temperature, and time","authors":"Katie R. Gann, Naomi Pieczulewski, Cameron A. Gorsak, Karen Heinselman, Thaddeus J. Asel, Brenton A. Noesges, Kathleen T. Smith, Daniel M. Dryden, Huili Grace Xing, Hari P. Nair, David A. Muller, Michael O. Thompson","doi":"10.1063/5.0184946","DOIUrl":"https://doi.org/10.1063/5.0184946","url":null,"abstract":"Optimizing thermal anneals of Si-implanted β-Ga2O3 is critical for low resistance contacts and selective area doping. We report the impact of annealing ambient, temperature, and time on the activation of room temperature ion-implanted Si in β-Ga2O3 at concentrations from 5 × 1018 to 1 × 1020 cm−3, demonstrating full activation (&gt;80% activation, mobilities &gt;70 cm2/V s) with contact resistances below 0.29 Ω mm. Homoepitaxial β-Ga2O3 films, grown by plasma-assisted molecular beam epitaxy on Fe-doped (010) substrates, were implanted at multiple energies to yield 100 nm box profiles of 5 × 1018, 5 × 1019, and 1 × 1020 cm−3. Anneals were performed in an ultra-high vacuum-compatible quartz furnace at 1 bar with well-controlled gas compositions. To maintain β-Ga2O3 stability, pO2 must be greater than 10−9 bar. Anneals up to pO2 = 1 bar achieve full activation at 5 × 1018 cm−3, while 5 × 1019 cm−3 must be annealed with pO2 ≤ 10−4 bar, and 1 × 1020 cm−3 requires pO2 &lt; 10−6 bar. Water vapor prevents activation and must be maintained below 10−8 bar. Activation is achieved for anneal temperatures as low as 850 °C with mobility increasing with anneal temperatures up to 1050 °C, though Si diffusion has been reported above 950 °C. At 950 °C, activation is maximized between 5 and 20 min with longer times resulting in decreased carrier activation (over-annealing). This over-annealing is significant for concentrations above 5 × 1019 cm−3 and occurs rapidly at 1 × 1020 cm−3. Rutherford backscattering spectrometry (channeling) suggests that damage recovery is seeded from remnant aligned β-Ga2O3 that remains after implantation; this conclusion is also supported by scanning transmission electron microscopy showing retention of the β-phase with inclusions that resemble the γ-phase.","PeriodicalId":15088,"journal":{"name":"Journal of Applied Physics","volume":"27 1","pages":""},"PeriodicalIF":3.2,"publicationDate":"2024-01-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139375884","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Wu Wei Zhou, Fu Ju Ye, Xiao Qi Li, Hao Yang Cui, Lei Chen
While existing research has explored control strategies in multi-dimensional fields, the interconnectedness between electromagnetic and vibrational fields remains relatively uncharted. To explore this intersection and harness its potential, we propose an intelligent programmable metasurface that modulates electromagnetic fields based on vibration intensity information. This paper introduces a groundbreaking approach that synergizes the physical fields of mechanical (vibrational) waves with electromagnetic waves, facilitating the detection and manipulation of information from both fields. By combining a programmable metasurface, vibration sensors, and microcontroller units, we have achieved regulation of the electromagnetic field through utilization of vibration intensity information. In this work, we have introduced six coding patterns that facilitate dual-beam scanning with variable deflection angles. A 20 × 20 metasurface is fabricated and measured, and the measured results are in good agreement with the simulated results. This research opens a new avenue for manipulating electromagnetic waves. Furthermore, the findings have the potential to impact a wide range of fields, including building structuralhealth monitoring, industrial production, mechanical equipment monitoring, and earthquake monitoring.
{"title":"Intelligent programmable metasurface for vibration field sensing and electromagnetic reflection modulation","authors":"Wu Wei Zhou, Fu Ju Ye, Xiao Qi Li, Hao Yang Cui, Lei Chen","doi":"10.1063/5.0175769","DOIUrl":"https://doi.org/10.1063/5.0175769","url":null,"abstract":"While existing research has explored control strategies in multi-dimensional fields, the interconnectedness between electromagnetic and vibrational fields remains relatively uncharted. To explore this intersection and harness its potential, we propose an intelligent programmable metasurface that modulates electromagnetic fields based on vibration intensity information. This paper introduces a groundbreaking approach that synergizes the physical fields of mechanical (vibrational) waves with electromagnetic waves, facilitating the detection and manipulation of information from both fields. By combining a programmable metasurface, vibration sensors, and microcontroller units, we have achieved regulation of the electromagnetic field through utilization of vibration intensity information. In this work, we have introduced six coding patterns that facilitate dual-beam scanning with variable deflection angles. A 20 × 20 metasurface is fabricated and measured, and the measured results are in good agreement with the simulated results. This research opens a new avenue for manipulating electromagnetic waves. Furthermore, the findings have the potential to impact a wide range of fields, including building structuralhealth monitoring, industrial production, mechanical equipment monitoring, and earthquake monitoring.","PeriodicalId":15088,"journal":{"name":"Journal of Applied Physics","volume":"12 1","pages":""},"PeriodicalIF":3.2,"publicationDate":"2024-01-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139105295","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Realization of microwave-absorbing materials with “small thickness, light weight, broad bandwidth, and low reflectivity” is an invariable topic. In this paper, Sm2Fe14BHx/polyurethane (SFBH/PU) composites with planar anisotropy were prepared by reduction–diffusion (R/D) and water bath hydrogenation (WBH) process. A minimum reflection loss (RL) value reaches −59.7 dB at the perfect matching frequency of 13.79 GHz with a thickness of only 1.035 mm. Compared with unhydrogenated SFB, the bandwidth and reflectivity are significantly improved. It is mainly attributed to the fact that introduction of hydrogen atoms effectively modulates the electromagnetic parameters and increases the Snoek limit ((μi−1)fr), which leads to the improvement of the high-frequency microwave absorption performance. In addition, the bandwidth equation is derived and simplified from the perspective of the reflected wave at the interface, which is in good agreement with the measured results.
{"title":"Microwave absorption properties of oriented Sm2Fe14BHx/polyurethane with planar anisotropy","authors":"Shengyu Yang, Yanfei Sheng, Wei Wu, Zhibiao Xu, Peng Wu, Yiwen Dong, Tao Wang, Fashen Li, Liang Qiao","doi":"10.1063/5.0185465","DOIUrl":"https://doi.org/10.1063/5.0185465","url":null,"abstract":"Realization of microwave-absorbing materials with “small thickness, light weight, broad bandwidth, and low reflectivity” is an invariable topic. In this paper, Sm2Fe14BHx/polyurethane (SFBH/PU) composites with planar anisotropy were prepared by reduction–diffusion (R/D) and water bath hydrogenation (WBH) process. A minimum reflection loss (RL) value reaches −59.7 dB at the perfect matching frequency of 13.79 GHz with a thickness of only 1.035 mm. Compared with unhydrogenated SFB, the bandwidth and reflectivity are significantly improved. It is mainly attributed to the fact that introduction of hydrogen atoms effectively modulates the electromagnetic parameters and increases the Snoek limit ((μi−1)fr), which leads to the improvement of the high-frequency microwave absorption performance. In addition, the bandwidth equation is derived and simplified from the perspective of the reflected wave at the interface, which is in good agreement with the measured results.","PeriodicalId":15088,"journal":{"name":"Journal of Applied Physics","volume":"10 1","pages":""},"PeriodicalIF":3.2,"publicationDate":"2024-01-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139105292","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
We have investigated the effect of gamma (γ)-irradiation on the structural and superconducting properties of FeTe0.55Se0.45 single crystals grown by the self-flux method. The impact of γ-irradiation on the superconducting transition temperature (TC), critical current density (JC), and vortex pinning mechanism has been systematically studied. The x-ray diffraction study reveals the growth of single crystals along the c-axis. The superconductivity has been confirmed in pristine and γ-irradiated samples through temperature-dependent resistivity (ρ(T)) and magnetization [M(T)] measurements. After irradiation, a slight improvement is observed in the upper critical field Hc2(0) values. The values of thermally activated energy have been calculated and a crossover from a single to collective vortex pinning regime is observed. Additionally, we have analyzed the vortex phase diagrams, revealing a transition from vortex liquid to vortex glass state. Furthermore, the presence of second magnetization peak (SMP) or fishtail effect has been noticed in the M(H) loops, and with increasing temperature, the position of SMP (Hsp) shifts toward lower magnetic field regions. The critical current density has been estimated by Bean's critical state model at different magnetic fields [JC(H)] and temperatures [JC(T)]. The defects through gamma-irradiation lead to a significant threefold increase in JC compared to pristine samples in self-field and at 2 K. The pinning mechanisms have been explained using collective pinning theory and the Dew-Hughes model by analyzing the normalized pinning force density. Our analysis indicates that δl-pinning is dominant and point defects are present in all the samples.
我们研究了伽马（γ）辐照对自流式方法生长的 FeTe0.55Se0.45 单晶的结构和超导特性的影响。系统研究了γ-辐照对超导转变温度（TC）、临界电流密度（JC）和涡旋钉扎机制的影响。X 射线衍射研究表明，单晶体沿 c 轴生长。通过随温度变化的电阻率（ρ(T)）和磁化率[M(T)]测量，证实了原始样品和γ辐照样品的超导性。辐照后，观察到上临界磁场 Hc2(0) 值略有改善。我们计算了热激活能量值，并观察到从单涡旋到集体涡旋钉扎机制的交叉。此外，我们还分析了涡旋相图，发现了从涡旋液态到涡旋玻璃态的过渡。此外，我们还注意到 M（H）环中存在第二磁化峰（SMP）或鱼尾效应，而且随着温度的升高，第二磁化峰（Hsp）的位置会向低磁场区域移动。在不同磁场[JC(H)]和温度[JC(T)]下，临界电流密度是通过 Bean 临界态模型估算出来的。通过伽马辐照产生的缺陷导致自磁场和 2 K 时的 JC 比原始样品显著增加了三倍。我们的分析表明，δl 引脚占主导地位，所有样品中都存在点缺陷。
{"title":"Effects of gamma-irradiation on the superconducting properties of FeTe0.55Se0.45 single crystals grown by self-flux method","authors":"Himanshu Chauhan, G. D. Varma","doi":"10.1063/5.0177897","DOIUrl":"https://doi.org/10.1063/5.0177897","url":null,"abstract":"We have investigated the effect of gamma (γ)-irradiation on the structural and superconducting properties of FeTe0.55Se0.45 single crystals grown by the self-flux method. The impact of γ-irradiation on the superconducting transition temperature (TC), critical current density (JC), and vortex pinning mechanism has been systematically studied. The x-ray diffraction study reveals the growth of single crystals along the c-axis. The superconductivity has been confirmed in pristine and γ-irradiated samples through temperature-dependent resistivity (ρ(T)) and magnetization [M(T)] measurements. After irradiation, a slight improvement is observed in the upper critical field Hc2(0) values. The values of thermally activated energy have been calculated and a crossover from a single to collective vortex pinning regime is observed. Additionally, we have analyzed the vortex phase diagrams, revealing a transition from vortex liquid to vortex glass state. Furthermore, the presence of second magnetization peak (SMP) or fishtail effect has been noticed in the M(H) loops, and with increasing temperature, the position of SMP (Hsp) shifts toward lower magnetic field regions. The critical current density has been estimated by Bean's critical state model at different magnetic fields [JC(H)] and temperatures [JC(T)]. The defects through gamma-irradiation lead to a significant threefold increase in JC compared to pristine samples in self-field and at 2 K. The pinning mechanisms have been explained using collective pinning theory and the Dew-Hughes model by analyzing the normalized pinning force density. Our analysis indicates that δl-pinning is dominant and point defects are present in all the samples.","PeriodicalId":15088,"journal":{"name":"Journal of Applied Physics","volume":"16 1","pages":""},"PeriodicalIF":3.2,"publicationDate":"2024-01-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139105465","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：