Jae-Heon Lee, Hee-Jung Yeom, Gwang-Seok Chae, Jung-Hyung Kim, Hyo-Chang Lee
In this study, we examined the potential errors in plasma-density measurements using the cutoff probe method under various structural conditions, such as tip distance and length. Our studies indicate that under conditions of thin sheath thickness, the length or distance of the metal tips on the cutoff probe has a slight effect on the plasma transmission spectrum or cutoff frequency. However, under conditions with a notably thick sheath, the structure of the probe tip can cause an error of up to 2% between the measured cutoff frequency and actual plasma frequency. Consequently, for precise measurements of plasma density using the cutoff probe method, it is imperative to maintain a probe tip distance exceeding five times the sheath width and utilize a sufficiently long probe tip length. This finding is anticipated to provide essential guidelines for the design and fabrication of effective cutoff probes and enhance the accuracy of plasma-density measurements using a cutoff probe.
{"title":"Effect of probe structure on wave transmission spectra of microwave cutoff probe","authors":"Jae-Heon Lee, Hee-Jung Yeom, Gwang-Seok Chae, Jung-Hyung Kim, Hyo-Chang Lee","doi":"10.1063/5.0221290","DOIUrl":"https://doi.org/10.1063/5.0221290","url":null,"abstract":"In this study, we examined the potential errors in plasma-density measurements using the cutoff probe method under various structural conditions, such as tip distance and length. Our studies indicate that under conditions of thin sheath thickness, the length or distance of the metal tips on the cutoff probe has a slight effect on the plasma transmission spectrum or cutoff frequency. However, under conditions with a notably thick sheath, the structure of the probe tip can cause an error of up to 2% between the measured cutoff frequency and actual plasma frequency. Consequently, for precise measurements of plasma density using the cutoff probe method, it is imperative to maintain a probe tip distance exceeding five times the sheath width and utilize a sufficiently long probe tip length. This finding is anticipated to provide essential guidelines for the design and fabrication of effective cutoff probes and enhance the accuracy of plasma-density measurements using a cutoff probe.","PeriodicalId":15088,"journal":{"name":"Journal of Applied Physics","volume":null,"pages":null},"PeriodicalIF":3.2,"publicationDate":"2024-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142204385","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
H. Pezeshki, P. Li, R. Lavrijsen, M. Heck, B. Koopmans
We present an integrated magneto-photonic device for all-optical switching of non-volatile multi-bit spintronic memory. The bits are based on stand-alone magneto-tunnel junctions, which are perpendicularly magnetized with all-optically switchable free layers, coupled onto photonic crystal nanobeam cavities on an indium phosphide based platform. This device enables switching of the magnetization state of the bits by locally increasing the power absorption of light at resonance with the cavity. We design an add/drop network of cavities to grant random access to multiple bits via a wavelength-division multiplexing scheme. Based on a three-dimensional finite-difference time-domain method, we numerically illustrate a compact device capable of switching and accessing at least eight bits in different cavities with a 5 nm wavelength spacing in the conventional (C) telecommunication band. Our multi-bit device holds promise as a new paradigm for developing an ultrafast photonically addressable spintronic memory and may also empower novel opportunities for photonically driven spintronic-based neuromorphic computing.
{"title":"Integrated magneto-photonic non-volatile multi-bit memory","authors":"H. Pezeshki, P. Li, R. Lavrijsen, M. Heck, B. Koopmans","doi":"10.1063/5.0221825","DOIUrl":"https://doi.org/10.1063/5.0221825","url":null,"abstract":"We present an integrated magneto-photonic device for all-optical switching of non-volatile multi-bit spintronic memory. The bits are based on stand-alone magneto-tunnel junctions, which are perpendicularly magnetized with all-optically switchable free layers, coupled onto photonic crystal nanobeam cavities on an indium phosphide based platform. This device enables switching of the magnetization state of the bits by locally increasing the power absorption of light at resonance with the cavity. We design an add/drop network of cavities to grant random access to multiple bits via a wavelength-division multiplexing scheme. Based on a three-dimensional finite-difference time-domain method, we numerically illustrate a compact device capable of switching and accessing at least eight bits in different cavities with a 5 nm wavelength spacing in the conventional (C) telecommunication band. Our multi-bit device holds promise as a new paradigm for developing an ultrafast photonically addressable spintronic memory and may also empower novel opportunities for photonically driven spintronic-based neuromorphic computing.","PeriodicalId":15088,"journal":{"name":"Journal of Applied Physics","volume":null,"pages":null},"PeriodicalIF":3.2,"publicationDate":"2024-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142204386","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In this study, we integrated an Indium Gallium Zinc Oxide (IGZO) channel with a superlattice of HfO2/ZrO2 (HZO) under low-thermal-budget microwave annealing to produce nearly wake-up-free ferroelectric capacitors. To eliminate the impact of trap-charges during the atomic layer deposition process, we conducted H2 plasma treatment to eliminate leak defects induced by carbon contamination and maintain neutrality to achieve high-quality IGZO/HZO interfaces, confirmed by x-ray photoelectron spectroscopy. The H2 plasma treatment improved polarization (Pr) and coercive field (Ec), reaching 2Pr: 40 μC/cm2 and Ec: 2.33 MV/cm, enabling a low-power writing speed of 30 ns with eight states (three bits per cell). The defect engineering method ensures endurance of up to 108 cycles and retains ten-year data storage at 90 °C. This research provides a new avenue for improving emerging oxide interfaces controlled by ferroelectric polarization.
{"title":"Improvement of memory storage capacity and prolongation of endurance/retention through H2 plasma treatment of IGZO/HZO structure","authors":"Cheng-Rui Liu, Yu-Tzu Tsai, Yu-Ting Chen, Zheng-Kai Chen, Zi-Rong Huang, Sheng-Min Wang, Chia-Shuo Pai, Ying-Tsan Tang","doi":"10.1063/5.0214983","DOIUrl":"https://doi.org/10.1063/5.0214983","url":null,"abstract":"In this study, we integrated an Indium Gallium Zinc Oxide (IGZO) channel with a superlattice of HfO2/ZrO2 (HZO) under low-thermal-budget microwave annealing to produce nearly wake-up-free ferroelectric capacitors. To eliminate the impact of trap-charges during the atomic layer deposition process, we conducted H2 plasma treatment to eliminate leak defects induced by carbon contamination and maintain neutrality to achieve high-quality IGZO/HZO interfaces, confirmed by x-ray photoelectron spectroscopy. The H2 plasma treatment improved polarization (Pr) and coercive field (Ec), reaching 2Pr: 40 μC/cm2 and Ec: 2.33 MV/cm, enabling a low-power writing speed of 30 ns with eight states (three bits per cell). The defect engineering method ensures endurance of up to 108 cycles and retains ten-year data storage at 90 °C. This research provides a new avenue for improving emerging oxide interfaces controlled by ferroelectric polarization.","PeriodicalId":15088,"journal":{"name":"Journal of Applied Physics","volume":null,"pages":null},"PeriodicalIF":3.2,"publicationDate":"2024-08-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142204391","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
J. A. Don Jayamanne, R. Outerovitch, F. Ballanger, J. Bénier, E. Blanco, C. Chauvin, P. Hereil, J. Tailleur, O. Durand, R. Pierrat, R. Carminati, A. Hervouët, P. Gandeboeuf, J.-R. Burie
When a solid metal is struck, its free surface can eject fast and fine particles. Despite the many diagnostics that have been implemented to measure the mass, size, velocity, or temperature of ejecta, these efforts provide only a partial picture of this phenomenon. Ejecta characterization, especially in constrained geometries, is an inherently ill-posed problem. In this context, Photon Doppler Velocimetry (PDV) has been a valuable diagnostic, measuring reliably particles and free surface velocities in the single scattering regime. Here, we present ejecta experiments in gas and how, in this context, PDV allows one to retrieve additional information on the ejecta, i.e., information on the particles’ size. We explain what governs ejecta transport in gas and how it can be simulated. To account for the multiple scattering of light in these ejecta, we use the Radiative Transfer Equation (RTE) that quantitatively describes PDV spectrograms, and their dependence not only on the velocity but also on the size distribution of the ejecta. We remind how spectrograms can be simulated by solving numerically this RTE and we show how to do so on hydrodynamic ejecta simulation results. Finally, we use this complex machinery in different ejecta transport scenarios to simulate the corresponding spectrograms. Comparing these to experimental results, we iteratively constrain the ejecta description at an unprecedented level. This work demonstrates our ability to recover particle size information from what is initially a velocity diagnostic, but more importantly it shows how, using existing simulation of ejecta, we capture through simulation the complexity of experimental spectrograms.
{"title":"Recovering particle velocity and size distributions in ejecta with photon Doppler velocimetry","authors":"J. A. Don Jayamanne, R. Outerovitch, F. Ballanger, J. Bénier, E. Blanco, C. Chauvin, P. Hereil, J. Tailleur, O. Durand, R. Pierrat, R. Carminati, A. Hervouët, P. Gandeboeuf, J.-R. Burie","doi":"10.1063/5.0220642","DOIUrl":"https://doi.org/10.1063/5.0220642","url":null,"abstract":"When a solid metal is struck, its free surface can eject fast and fine particles. Despite the many diagnostics that have been implemented to measure the mass, size, velocity, or temperature of ejecta, these efforts provide only a partial picture of this phenomenon. Ejecta characterization, especially in constrained geometries, is an inherently ill-posed problem. In this context, Photon Doppler Velocimetry (PDV) has been a valuable diagnostic, measuring reliably particles and free surface velocities in the single scattering regime. Here, we present ejecta experiments in gas and how, in this context, PDV allows one to retrieve additional information on the ejecta, i.e., information on the particles’ size. We explain what governs ejecta transport in gas and how it can be simulated. To account for the multiple scattering of light in these ejecta, we use the Radiative Transfer Equation (RTE) that quantitatively describes PDV spectrograms, and their dependence not only on the velocity but also on the size distribution of the ejecta. We remind how spectrograms can be simulated by solving numerically this RTE and we show how to do so on hydrodynamic ejecta simulation results. Finally, we use this complex machinery in different ejecta transport scenarios to simulate the corresponding spectrograms. Comparing these to experimental results, we iteratively constrain the ejecta description at an unprecedented level. This work demonstrates our ability to recover particle size information from what is initially a velocity diagnostic, but more importantly it shows how, using existing simulation of ejecta, we capture through simulation the complexity of experimental spectrograms.","PeriodicalId":15088,"journal":{"name":"Journal of Applied Physics","volume":null,"pages":null},"PeriodicalIF":3.2,"publicationDate":"2024-08-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142204389","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
L. Venkidu, N. Raja, Vasundharadevi Venkidu, B. Sundarakannan
The generation of above-bandgap photovoltage, referred to as the anomalous photovoltaic effect (APV), is an extraordinary characteristic sought after property in bulk ferroelectric photovoltaic devices. Despite the fact that the relatively narrow bandgap of BiFeO3 (BFO) (2.7 eV) induces a comparatively larger generation of photocurrent than other ferroelectric photovoltaic, it falls short in producing an anomalous photovoltage (Eg ≪ Voc) and exhibits leaky ferroelectric hysteresis due to unavoidable oxygen vacancies. This work revealed a reduction in oxygen vacancies through the substitution of Ba(Fe1/2Nb1/2)O3 in BFO, leading to improved structural, morphological, synchrotron XPS, and electrical properties. This reduction in oxygen vacancies has resulted in an impressive above-bandgap photovoltage (APV) of 4.41 V for 80BFO–20BFN with greater ferroelectric polarization (Pr = 20.45 μC/cm2) observed at the co-existence of polar and non-polar phases. Moreover, both theoretical and experimental optical analyses have demonstrated a significant decrease in the bandgap to 1.92 eV, effectively extending the visible region close to 653 nm. As a result, a larger population of photoexcited charge carriers is generated, enabling the attainment of a high current density (Jsc) of 0.75 μA/cm2 under 100 mW/cm2 light irradiation.
{"title":"Tuning bandgap and controlling oxygen vacancy in BiFeO3 via Ba(Fe1/2Nb1/2)O3 substitution for enhanced bulk ferroelectric photovoltaic response in Al/BFO–BFN/Ag solar cell","authors":"L. Venkidu, N. Raja, Vasundharadevi Venkidu, B. Sundarakannan","doi":"10.1063/5.0219513","DOIUrl":"https://doi.org/10.1063/5.0219513","url":null,"abstract":"The generation of above-bandgap photovoltage, referred to as the anomalous photovoltaic effect (APV), is an extraordinary characteristic sought after property in bulk ferroelectric photovoltaic devices. Despite the fact that the relatively narrow bandgap of BiFeO3 (BFO) (2.7 eV) induces a comparatively larger generation of photocurrent than other ferroelectric photovoltaic, it falls short in producing an anomalous photovoltage (Eg ≪ Voc) and exhibits leaky ferroelectric hysteresis due to unavoidable oxygen vacancies. This work revealed a reduction in oxygen vacancies through the substitution of Ba(Fe1/2Nb1/2)O3 in BFO, leading to improved structural, morphological, synchrotron XPS, and electrical properties. This reduction in oxygen vacancies has resulted in an impressive above-bandgap photovoltage (APV) of 4.41 V for 80BFO–20BFN with greater ferroelectric polarization (Pr = 20.45 μC/cm2) observed at the co-existence of polar and non-polar phases. Moreover, both theoretical and experimental optical analyses have demonstrated a significant decrease in the bandgap to 1.92 eV, effectively extending the visible region close to 653 nm. As a result, a larger population of photoexcited charge carriers is generated, enabling the attainment of a high current density (Jsc) of 0.75 μA/cm2 under 100 mW/cm2 light irradiation.","PeriodicalId":15088,"journal":{"name":"Journal of Applied Physics","volume":null,"pages":null},"PeriodicalIF":3.2,"publicationDate":"2024-08-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142204431","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Hariharan Ramasubramanian, Cheng Shao, Alan J. H. McGaughey
The pyrite phase of sodium superoxide, NaO2, is studied using equilibrium molecular dynamics simulations and lattice dynamics calculations to understand the impacts of static disorder and dynamic disorder on its thermal conductivity. Three structural regimes are observed based on the rotational dynamics and orientations of O2− ions. At low temperatures, where the O2− ions librate and the system is fully ordered, thermal conductivity exhibits a crystal-like temperature dependence, decreasing with increasing temperature. As temperature increases, the static disorder regime emerges, where the O2− ions transition between different orientations on a time scale larger than the librational period. In this regime, the thermal conductivity continues to decrease and then becomes temperature independent. At higher temperatures, where the O2− ions freely rotate, the system is dynamically disordered and the thermal conductivity is temperature independent, as in an amorphous solid. Using instantaneous normal mode analysis and Allen–Feldman theory, 80% of the thermal conductivity in the dynamic disorder regime is attributed to diffusons, vibrational modes that are non-propagating and non-localized. When increasing the lattice constant at a constant temperature, transitions from librations to static disorder to dynamic disorder are also observed, with the thermal conductivity decreasing monotonically. The presented methodology can be applied to other crystals with rotational degrees of freedom, offering strategies for the design of thermal conductivity switches that are responsive to external stimuli.
{"title":"Impact of static disorder and dynamic disorder on the thermal conductivity of sodium superoxide (NaO2)","authors":"Hariharan Ramasubramanian, Cheng Shao, Alan J. H. McGaughey","doi":"10.1063/5.0219222","DOIUrl":"https://doi.org/10.1063/5.0219222","url":null,"abstract":"The pyrite phase of sodium superoxide, NaO2, is studied using equilibrium molecular dynamics simulations and lattice dynamics calculations to understand the impacts of static disorder and dynamic disorder on its thermal conductivity. Three structural regimes are observed based on the rotational dynamics and orientations of O2− ions. At low temperatures, where the O2− ions librate and the system is fully ordered, thermal conductivity exhibits a crystal-like temperature dependence, decreasing with increasing temperature. As temperature increases, the static disorder regime emerges, where the O2− ions transition between different orientations on a time scale larger than the librational period. In this regime, the thermal conductivity continues to decrease and then becomes temperature independent. At higher temperatures, where the O2− ions freely rotate, the system is dynamically disordered and the thermal conductivity is temperature independent, as in an amorphous solid. Using instantaneous normal mode analysis and Allen–Feldman theory, 80% of the thermal conductivity in the dynamic disorder regime is attributed to diffusons, vibrational modes that are non-propagating and non-localized. When increasing the lattice constant at a constant temperature, transitions from librations to static disorder to dynamic disorder are also observed, with the thermal conductivity decreasing monotonically. The presented methodology can be applied to other crystals with rotational degrees of freedom, offering strategies for the design of thermal conductivity switches that are responsive to external stimuli.","PeriodicalId":15088,"journal":{"name":"Journal of Applied Physics","volume":null,"pages":null},"PeriodicalIF":3.2,"publicationDate":"2024-08-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142204388","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Y. Kalboussi, S. Dadouch, B. Delatte, F. Miserque, D. Dragoe, F. Eozenou, M. Baudrier, S. Tusseau-Nenez, Y. Zheng, L. Maurice, E. Cenni, Q. Bertrand, P. Sahuquet, E. Fayette, G. Jullien, C. Inguimbert, M. Belhaj, T. Proslier
This study investigates the use of atomic layer deposition (ALD) to mitigate multipacting phenomena inside superconducting radio frequency cavities used in particle accelerators while preserving high quality factors in the 1010 range. The unique ALD capability to control the film thickness down to the atomic level on arbitrary complex shape objects enables the fine-tuning of TiN film resistivity and total electron emission yield (TEEY) from coupons to devices. This level of control allows us to adequately choose a TiN film thickness that provides both high resistivity to prevent Ohmic losses and a low TEEY to mitigate multipacting for the application of interest. The methodology presented in this work can be scaled to other domains and devices subject to RF fields in vacuum and sensitive to multipacting or electron discharge processes with their own requirements in resistivities and TEEY values.
这项研究探讨了如何利用原子层沉积 (ALD) 技术来减轻粒子加速器中使用的超导射频腔内的多压强现象，同时保持 1010 范围内的高质量系数。独特的 ALD 功能可将任意复杂形状物体上的薄膜厚度控制到原子级别，从而实现从试样到设备的 TiN 薄膜电阻率和总电子发射率 (TEEY) 的微调。这种控制水平使我们能够充分选择 TiN 薄膜厚度，既能提供高电阻率以防止欧姆损耗，又能提供低 TEEY 以减轻相关应用中的多孔性。这项工作中介绍的方法可扩展到其他领域和器件，这些领域和器件在真空中会受到射频场的影响，并对电阻率和 TEEY 值有自己的要求，对多压制或电子放电过程敏感。
{"title":"Multipacting mitigation by atomic layer deposition: The case study of titanium nitride","authors":"Y. Kalboussi, S. Dadouch, B. Delatte, F. Miserque, D. Dragoe, F. Eozenou, M. Baudrier, S. Tusseau-Nenez, Y. Zheng, L. Maurice, E. Cenni, Q. Bertrand, P. Sahuquet, E. Fayette, G. Jullien, C. Inguimbert, M. Belhaj, T. Proslier","doi":"10.1063/5.0221943","DOIUrl":"https://doi.org/10.1063/5.0221943","url":null,"abstract":"This study investigates the use of atomic layer deposition (ALD) to mitigate multipacting phenomena inside superconducting radio frequency cavities used in particle accelerators while preserving high quality factors in the 1010 range. The unique ALD capability to control the film thickness down to the atomic level on arbitrary complex shape objects enables the fine-tuning of TiN film resistivity and total electron emission yield (TEEY) from coupons to devices. This level of control allows us to adequately choose a TiN film thickness that provides both high resistivity to prevent Ohmic losses and a low TEEY to mitigate multipacting for the application of interest. The methodology presented in this work can be scaled to other domains and devices subject to RF fields in vacuum and sensitive to multipacting or electron discharge processes with their own requirements in resistivities and TEEY values.","PeriodicalId":15088,"journal":{"name":"Journal of Applied Physics","volume":null,"pages":null},"PeriodicalIF":3.2,"publicationDate":"2024-08-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142204390","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Nathan P. Brown, Christopher R. Johnson, Paul E. Specht
We measured the austenitic FeCr18Ni12.5 stainless steel Hugoniot as a function of crystallographic direction to approximately 60 GPa. We shock-compressed FeCr18Ni12.5 samples oriented along ⟨100⟩, ⟨110⟩, and ⟨111⟩ to mean stresses ranging 30.5–58.1 GPa via Ta plate impact in a large-bore powder gun and measured the free-surface velocities with laser interferometry. We unambiguously observed the largest post-shock free-surface velocity along ⟨100⟩ in each experiment, which consequently produced the lowest shock velocity along that orientation. However, the propagation of experimental uncertainties through the impedance matching scheme used to compute the shock velocity produced sufficient uncertainty overlap to preclude definitive conclusion of Hugoniot anisotropy.
{"title":"Shock compression of single-crystal austenitic FeCr18Ni12.5 stainless steel to 60 GPa","authors":"Nathan P. Brown, Christopher R. Johnson, Paul E. Specht","doi":"10.1063/5.0226622","DOIUrl":"https://doi.org/10.1063/5.0226622","url":null,"abstract":"We measured the austenitic FeCr18Ni12.5 stainless steel Hugoniot as a function of crystallographic direction to approximately 60 GPa. We shock-compressed FeCr18Ni12.5 samples oriented along ⟨100⟩, ⟨110⟩, and ⟨111⟩ to mean stresses ranging 30.5–58.1 GPa via Ta plate impact in a large-bore powder gun and measured the free-surface velocities with laser interferometry. We unambiguously observed the largest post-shock free-surface velocity along ⟨100⟩ in each experiment, which consequently produced the lowest shock velocity along that orientation. However, the propagation of experimental uncertainties through the impedance matching scheme used to compute the shock velocity produced sufficient uncertainty overlap to preclude definitive conclusion of Hugoniot anisotropy.","PeriodicalId":15088,"journal":{"name":"Journal of Applied Physics","volume":null,"pages":null},"PeriodicalIF":3.2,"publicationDate":"2024-08-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142204392","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
We attempted to deposit a platinum (Pt) layer onto a tungsten trioxide (WO3) thin film (Pt/WO3). The Pt layer deposited on WO3 was oxidized by calcining Pt/WO3 in air to form PtOx/WO3. An n-type anomalous photo-thermoelectric (photo-TE) effect was confirmed for Pt/WO3 and Pt/HyWO3−x. HyWO3−x is a protonated WO3 after the gaschromic (GC) reaction of WO3 in Pt/WO3. The anomalous photo-TE effect was that both the electrical conductivity (σphoto) and the absolute value of the Seebeck coefficient (Sphoto) increased under UV light or visible light irradiation. After stopping the irradiation, σphoto and Sphoto decreased. In contrast, an n-type normal photo-TE effect was observed for PtOx/HyWO3−x after the GC reaction of PtOx/WO3, in which σphoto increased and the absolute value of Sphoto decreased under ultraviolet (UV) light irradiation, and vice versa after stopping the irradiation. These findings indicate that Pt was responsible for the anomalous photo-TE effect due to the electron accumulation capability of Pt, to which electrons were transferred from the conduction band of HyWO3−x. In contrast, electrons could not energetically transfer from HyWO3−x to PtO2, which existed in PtOx particles at the surface. Therefore, PtOx/HyWO3−x behaved similar to sole HyWO3−x, indicating the normal photo-TE effect.
{"title":"Anomalous photo-thermoelectric effects of platinum and tungsten trioxide bilayers","authors":"Takeru Ito, Chihiro Hanioka, Hiroshi Irie","doi":"10.1063/5.0220952","DOIUrl":"https://doi.org/10.1063/5.0220952","url":null,"abstract":"We attempted to deposit a platinum (Pt) layer onto a tungsten trioxide (WO3) thin film (Pt/WO3). The Pt layer deposited on WO3 was oxidized by calcining Pt/WO3 in air to form PtOx/WO3. An n-type anomalous photo-thermoelectric (photo-TE) effect was confirmed for Pt/WO3 and Pt/HyWO3−x. HyWO3−x is a protonated WO3 after the gaschromic (GC) reaction of WO3 in Pt/WO3. The anomalous photo-TE effect was that both the electrical conductivity (σphoto) and the absolute value of the Seebeck coefficient (Sphoto) increased under UV light or visible light irradiation. After stopping the irradiation, σphoto and Sphoto decreased. In contrast, an n-type normal photo-TE effect was observed for PtOx/HyWO3−x after the GC reaction of PtOx/WO3, in which σphoto increased and the absolute value of Sphoto decreased under ultraviolet (UV) light irradiation, and vice versa after stopping the irradiation. These findings indicate that Pt was responsible for the anomalous photo-TE effect due to the electron accumulation capability of Pt, to which electrons were transferred from the conduction band of HyWO3−x. In contrast, electrons could not energetically transfer from HyWO3−x to PtO2, which existed in PtOx particles at the surface. Therefore, PtOx/HyWO3−x behaved similar to sole HyWO3−x, indicating the normal photo-TE effect.","PeriodicalId":15088,"journal":{"name":"Journal of Applied Physics","volume":null,"pages":null},"PeriodicalIF":3.2,"publicationDate":"2024-08-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142204433","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The field of topological protected wave engineering, inspired by quantum mechanics, has generated significant interest. Acoustic analogs of electronic topological insulators provide new opportunities for manipulating sound propagation with unconventional acoustic edge modes that are immune to backscattering. Numerous reports have been published on the design of two-dimensional acoustic topological insulators (ATIs). However, the sound path of a two-dimensional design is simple, and its ability to control sound waves is limited. On the other hand, the design of 3D ATIs is relatively complex, making it difficult to manufacture and limiting its versatility. Based on the design idea of the 2D ATIs, inspired by the art named 3D pin-sculpture, an adjustable structure of a finite size consisting of spindle-shaped units with a variable cross section is designed to realize flexible path transformation. Furthermore, unlike two-dimensional structural defects, such as cavities and disorder, the analysis of vertical dislocation defects in finite-sized structures allows for the design of local sound propagation along the z-direction, providing a concept for constructing a stereo path. The designed structure also serves two functions: acoustic switch and delay. This idea offers an alternative approach to designing complex sound transmission paths.
受量子力学的启发，拓扑保护波工程领域引起了人们的极大兴趣。电子拓扑绝缘体的声学类似物为利用不受反向散射影响的非传统声学边缘模式操纵声音传播提供了新的机遇。关于二维声学拓扑绝缘体（ATIs）的设计已经发表了大量报告。然而，二维设计的声道比较简单，控制声波的能力有限。另一方面，三维声学拓扑绝缘体的设计相对复杂，难以制造，限制了其多功能性。基于二维 ATI 的设计理念，受三维针雕艺术的启发，我们设计了一种由横截面可变的纺锤形单元组成的有限尺寸可调结构，以实现灵活的路径转换。此外，与空洞和无序等二维结构缺陷不同，通过分析有限尺寸结构中的垂直位错缺陷，可以设计沿 Z 方向的局部声音传播，从而提供构建立体路径的概念。所设计的结构还具有两种功能：声学开关和延迟。这一想法为设计复杂的声音传播路径提供了另一种方法。
{"title":"Adjustable stereo path design method based on pin-sculpture acoustic topological insulator with Z-dislocation defect immunity","authors":"Peng Liu, Hangyu Li, Zengyao Lv, Yongmao Pei","doi":"10.1063/5.0213045","DOIUrl":"https://doi.org/10.1063/5.0213045","url":null,"abstract":"The field of topological protected wave engineering, inspired by quantum mechanics, has generated significant interest. Acoustic analogs of electronic topological insulators provide new opportunities for manipulating sound propagation with unconventional acoustic edge modes that are immune to backscattering. Numerous reports have been published on the design of two-dimensional acoustic topological insulators (ATIs). However, the sound path of a two-dimensional design is simple, and its ability to control sound waves is limited. On the other hand, the design of 3D ATIs is relatively complex, making it difficult to manufacture and limiting its versatility. Based on the design idea of the 2D ATIs, inspired by the art named 3D pin-sculpture, an adjustable structure of a finite size consisting of spindle-shaped units with a variable cross section is designed to realize flexible path transformation. Furthermore, unlike two-dimensional structural defects, such as cavities and disorder, the analysis of vertical dislocation defects in finite-sized structures allows for the design of local sound propagation along the z-direction, providing a concept for constructing a stereo path. The designed structure also serves two functions: acoustic switch and delay. This idea offers an alternative approach to designing complex sound transmission paths.","PeriodicalId":15088,"journal":{"name":"Journal of Applied Physics","volume":null,"pages":null},"PeriodicalIF":3.2,"publicationDate":"2024-08-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142204432","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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